Abstract: A roll-to-roll coating of plastic film with dielectric coatings formed in situ by the reaction of a reactive gas with deposited metal provides arrays of rollers around which the web is looped between the low-pressure zone at which the metal is deposited in each pass upon and a high-pressure zone in which the reactive gas primarily reacts with the deposited metal.

Abstract: In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

Abstract: A saponified ethylene-vinyl acetate copolymer is oxidation-treated in solution in a solvent mixture of water and alcohol in the presence of hydrogen peroxide and a polyvalent metal salt to provide an oxidation-treated polymer solution. This oxidation-treated polymer solution is coated on a substrate, e.g. a polymer film, to provide a laminate.

Abstract: A process for producing a silicon oxide deposit at the surface of a metallic substrate comprising the following steps performed either concomitantly or successively: (1) treating the surface of the substrate with a corona discharge; and (2) exposing the surface to an atmosphere containing a silicon compound in the gaseous state. Both steps (1) and (2) are conducted at a pressure greater than 10,000 Pa. This process can be used to provide anti-corrosion treatment to a metallic substrate or to a metallized polymeric support.

Abstract: A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.

Abstract: The present invention provides a method of manufacturing an electromagnetic wave shielding plastic molding, which comprises the step of, without prior washing and without providing a primer layer, or after providing a water-soluble primer layer, forming a conductive layer comprising at least one selected from the group consisting of Al, Cu, Ni, Cr and Sn and alloys thereof by high-frequency excited plasma. The electromagnetic wave shielding plastic molding thus-produced has excellent in electromagnetic wave shielding effects, adhering strength, humidity resistance and hardness, has economic advantages, and hence is useful as an electromagnetic wave shield for a plastic molding, such as the housing for a portable telephone.

Abstract: This invention aims to form uniformly and effectively an ultra thin chemical adsorbing film having an excellent water repellent property, oil repellent property, and contamination-proof property on the surface of a substrate by chemically adsorbing in a gas phase atmosphere. A chemically adsorbed film can be formed on any type of substrate and in a short time by chemically adsorbing a chlorosilane based surface-active agent on the surface of a substrate having active hydrogen groups. Further, a chemically adsorbed monomolecular film, or a polymer film, can be formed on any type of substrate and in a short time by forming a siloxane based monomolecular film or a polysiloxane adsorbed film in a gas atmosphere having a chlorosilane based surface-active agent having plurality of chlorosilyl groups.

Abstract: A method of producing a magnetic recording medium comprises the steps of heating in vacuum a magnetic recording medium produced by forming a ferromagnetic metal-film-type recording medium onto a non-magnetic substrate and of forming, immediately after heating, a protective layer on the magnetic recording medium by a plasma CVD method. A production apparatus for carrying out this method comprises a feeding apparatus for feeding a magnetic recording medium with a ferromagnetic thin film formed on a non-magnetic substrate, a plasma CVD apparatus, disposed in the path of this feeding apparatus, for forming a protective layer, and a heating apparatus disposed just before this plasma CVD apparatus in the feeding path.

Abstract: The invention relates to a method for the aftertreatment of an oxide coating, and specifically an SiO.sub.x coating on a synthetic film. In this aftertreatment the oxide coating is exposed to a plasma whose particles effect positive changes of the oxide coating.

Abstract: A plasma enhanced chemical vapor deposition method is provided for depositing an oxide film onto a substrate surface. Deposition is achieved even onto a surface of a glass or other relatively non-receptive substrate. A sub-film is deposited under plasma enhanced chemical vapor deposition conditions more strongly favoring deposition, followed by deposition of the desired oxide film under second plasma enhanced chemical vapor deposition conditions less strongly favoring deposition. High quality oxide films can be achieved by deposition at second plasma enhanced chemical vapor deposition conditions only marginally favoring deposition over etching.