Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape.

Abstract: Provided is a culture container base material made of a polyolefin material, capable of readily forming a culture container for culturing adherent cells. The culture container base material is for culturing the adherent cells and made of the polyolefin material. At least a part of a surface of the base material is subjected to a surface treatment, where the surface of the base material is a culture surface of the culture container, and the surface subjected to the surface treatment has a static water contact angle of greater than 80° and a receding contact angle of less than 53°.

Abstract: The invention relates to a method for adhesion of a thin film or functional layer to a substrate by applying a pulsed and/or alternating voltage.

Abstract: A method is provided for sealing a seam in a self-aligned contact (SAC) layer that is disposed on a gate of a semiconductor structure. The method includes depositing a filler in the seam to seal the seam.

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

Abstract: A method of manufacturing a glass container in preparation for direct digital printing includes forming a glass container having a glass wall and applying a primer coating to the glass container. The primer coating is applied by directing an atomized spray of an aqueous primer composition onto the glass container over an adherent base layer, such as a hot-end coating, which deposits the primer coating, followed by heating the primer coating with a heat source such as a flame. Upon being heated, the clarity of the primer coating is increased. As a result, a decorative marking may be printed onto the glass container without having to pretreat the glass container in a way that involves pyrolytically depositing a layer of silicon dioxide onto the glass container prior to printing.

Abstract: To improve the complicated painting process of large three-dimensionally shaped components, preferably aircraft components, the masking step is automated. This is achieved by printing a masking medium onto the component with an inkjet method, the masking medium forming a masking film. The masking film masks the desired surface area and can be pulled off following the end of the painting. Preferably, spray films, functional printing inks or mold release agents are used as the masking medium.

Abstract: The invention relates to an atomic layer process printer for material deposition, etching and/or cleaning on an atomic scale in a selective area. The invention further relates to a method for material deposition, etching and/or cleaning on an atomic scale in a selective area using the atomic layer process printer.

Abstract: A cell adhesive substrate comprising a substratum, on a surface of which a peptide group is immobilized, wherein the peptide group comprises a peptide containing 40% or more and 75% or less of one or two or more of basic amino acid residues selected from the group consisting of lysine, arginine and histidine and 25% or more of one or two or more of hydrophobic amino acid residues selected from the group consisting of leucine, isoleucine, glycine, alanine, valine, phenylalanine, proline, tryptophan and methionine. There is provided a cell adhesive substrate that is unlikely to cause an immune reaction and can maintain a cell adhesion effect for a long time.

Abstract: A meta-material is disclosed that includes a first layer composed of graphene, and one or more additional layers, each composed of glassy carbon or graphene. A method of producing an engineered material includes depositing a graphene precursor on a substrate, pyrolyzing the graphene precursor to allow the formation of graphene, depositing a glassy carbon precursor the graphene, pyrolyzing to allow the formation of glassy carbon from the glassy carbon precursor, depositing a graphene precursor on the glassy carbon, and pyrolyzing the graphene precursor to allow the formation of graphene.

Abstract: A system for use in maintaining a pipe includes a motorized apparatus including a body assembly and at least one maintenance device. The at least one maintenance device includes a sprayer, a heater, and an infrared sensor. The system includes at least one controller configured to apply the at least one coating material to the interior surface of the pipe at a work location using the sprayer, heat the interior surface of the pipe at the work location using the heater to begin a cure of the at least one coating material, generate one or more infrared images of the work location using the infrared sensor while using the heater to cure the at least one coating material, and perform a non-destructive evaluation (NDE) of the work location based on the one or more infrared images.

Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

Abstract: Apparatus for extending substrate queue time for hybrid bonding by preserving plasma activation. In some embodiments, the apparatus may include an environmentally controllable space with a support for holding a die or a substrate, a gas velocity accelerator that recirculates one or more gases laterally across the support, a filter, a humidifier apparatus that is fluidly connected to the environmentally controllable space, wherein the humidifier apparatus enables controllable humidity levels within the environmentally controllable space, a pressurizing apparatus fluidly connected to the humidifier apparatus on an output and fluidly connected to at least one gas supply on an input, a relative humidity (RH) sensor positioned within the environmentally controllable space, and an environment controller in communication with at least the humidifier apparatus and the RH sensor, wherein the environment controller is configured to maintain an RH level of approximately 80% to approximately 95%.

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Abstract: An object is to provide a printing ink that has high environmental friendliness and is excellent in quick dry-curability of a coating when a plasma is used as a curing system. A solution is to provide an ink composition for plasma curing including a photocatalyst compound and/or a composite of a metal component and a photocatalyst compound and to provide an additive for an ink composition for plasma curing, the additive including a photocatalyst compound and/or a composite of a metal component and a photocatalyst compound.

Abstract: A plasma processing system is provided. The system includes a hydrogen gas supply and a hydrocarbon gas supply and a processing chamber. The system includes a first mass flow controller (MFC) for controlling hydrogen gas flow into the processing chamber and a second MFC for controlling hydrocarbon gas flow into the processing chamber. The system includes a plasma source for generating plasma at the processing chamber. The plasma is for etching SnO2. The system includes a controller for regulating the first MFC and the second MFC such that a ratio of hydrocarbon gas flow to the hydrogen gas flow into the processing chamber is between 1% and 60% so that when SnH4 is produced during said etching SnO2. The SnH4 is configured to react with hydrocarbon gas to produce an organotin compound that is volatilizable in a reaction that is more kinetically favorable than SnH4 decomposition into Sn powder.

Abstract: A hard carbon film that forms a sliding surface of a sliding member, wherein the hard carbon film includes terminal atoms that bond to carbon atoms and has a plurality of protruding shaped parts, part of which protrude from the surface thereof, with the periphery of each of the plurality of protruding shaped parts being terminated by a terminal atom. A manufacturing method for the hard carbon film for producing the hard carbon film on a sliding surface of the sliding member using arc vapor deposition having graphite as the vaporization source, wherein a gas containing the terminal atoms that bond to carbon atoms is introduced, and the plurality of protruding shaped parts is grown on the surface of the hard carbon film while terminating the periphery of the plurality of protruding shaped parts by bonding of the terminal atoms to carbon atoms.

Abstract: Porous liquid-filtering membranes having a repeatable distribution of pores of a small dimension are provided, as well as pillar templates that are used to produce such liquid filtering membranes. Also disclosed are methods of making and using the pillar templates to make porous liquid filtering membranes.

Abstract: A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity ? of ??0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity ? of ??0.05 [W/(m*K)].

Abstract: Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate.

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

Abstract: A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.

Abstract: A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The substrate includes a pattern layer, and the light absorbing layer includes silicon (Si).

Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.

Abstract: A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Abstract: The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

Abstract: According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 ?m. The first surface includes an unevenness.

Abstract: A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.

Abstract: Disclosed is a method of fabricating a MEMS membrane structure. The method comprises: forming a silicon oxide film dam structure on a silicon substrate; depositing an adhesive layer and then forming a sacrificial layer; depositing a surface protective film on the sacrificial layer; etching the surface protective film and the sacrificial layer, thus forming trenches of first to third rows on the silicon oxide film dam structure; depositing a support film inside of the trenches of first to third rows and on the surface protective film of the sacrificial layer, thus forming a membrane; and removing the sacrificial layer disposed inside the support film deposited inside of the trench of first row, thus forming an empty space.

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a processing chamber comprises a chamber body defining an interior volume and comprising an access port for inserting a substrate into the interior volume; a cathode assembly configured to generate a plasma within the interior volume; and a chamber liner comprising a smooth interior surface that is radially symmetric about a vertical axis of the chamber body. The chamber liner is configured to move between a loading position and an operation position.

Abstract: A substrate processing apparatus includes: a gas injection portion including two gas distribution portions, disposed on an upper portion in the chamber and spatially separated from each other, and two types of nozzles, respectively connected to the two gas distribution portions, having different lengths to each other; a first electrode, connected to a radio-frequency (RF) power supply and disposed below the gas injection portion to be vertically spaced apart from the gas injection portion, having a plurality of openings into which among the nozzles, one type of nozzles are respectively inserted; and a second electrode, disposed to oppose the first electrode, mounting a substrate.

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Abstract: An apparatus has a substrate. A laser is deposited above the substrate. The laser comprises one or more non-self-supporting layers of crystalline material. A first layer is disposed proximate the laser. The first layer is deposited using a first process. A second layer is disposed proximate the second layer. The second layer is deposited using a second process different than the first process. The first layer and the second layer are configured to mitigate mechanical stress in the laser. A waveguide is deposited proximate the laser. The waveguide is configured to receive plasmons from the laser and direct the plasmons to a recording medium.

Abstract: A continuous method for preparing a metal substrate having a graphene-comprising coating, the method including providing a metal substrate, continuously advancing the metal substrate into and through a processing chamber, the processing chamber having one or more heating elements, providing electromagnetic radiation to the metal substrate via the one or more heating elements to heat the metal substrate, wherein heating the metal substrates forms a molten metal layer on a top surface of the metal substrate, contacting the molten metal layer with a carbon source gas to form a graphene-comprising coating substantially covering the molten metal layer of the top surface of the metal substrate, solidifying the molten metal layer, and advancing the metal substrate having the graphene-comprising coating out of the processing chamber.

Abstract: Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.

Abstract: A method of manufacturing a CMC structure includes infiltrating a porous substrate with a composite material and performing a first densification on the infiltrated porous substrate, forming a first densified porous substrate, wherein the first densification includes techniques selected from the group of techniques comprising photonic curing, photonic sintering, pulsed thermal heating, or combinations thereof.

Abstract: Methods for depositing a metal film on a doped amorphous silicon layer as a nucleation layer and/or a glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the doped amorphous silicon layer and metal layer to stick to the substrate.

Abstract: Compositions comprising an isolated peptide, which may for example optionally comprise a sequence consisting of SVHSFDYDWYNV, or any cyclized version thereof, and methods of using same, including for treatment of or prevention of formation of microbial biofilms and against adhesion of a cell to a surface.

Abstract: The present disclosure relates to a method of fabricating a substrate for culturing stem cells, including forming a plasma polymer layer from a precursor material on a substrate using plasma, and the precursor material contains a heteroaromatic compound or a linear compound.

Abstract: The present invention discloses a vibration-damping and noise-reducing brake disc, where the vibration-damping and noise-reducing brake disc includes an intermediate disc having an outer side and a braking ring which surrounds the outer side of the intermediate disc. Two opposite surfaces of the braking ring are frictional surfaces provided with at least one laser scanning strip, where the laser scanning strip is obtained or formed by laser quenching and hardening treatments of the two frictional surfaces by a laser machine, for changing the physical and mechanical properties of the braking ring, such as the surface and inside hardness, residual stress distribution on the frictional surfaces, and the inside micro-structures of the braking ring, so as to suppress the generation of frictional vibration and noise during braking operations.

Abstract: A contact pin for connecting a first electrical conductor made of copper or a copper alloy and a second electrical conductor made of aluminum or an aluminum alloy comprises a plug-in section, a connecting section, and a coating disposed at least on the connecting section. The plug-in section is adapted to couple to the first electrical conductor. The connecting section is adapted to connect to the second electrical conductor. The coating is corrosion-resistant and compatible with aluminum and copper.

Abstract: A multifunctional coating method involves cleaning a surface, applying a layer of corrosion-resistant alloy coating to the surface, and applying an oleo-hydrophobic composite coating over the corrosion-resistant alloy coating. An oil and gas pipe has an inner surface with a multifunctional coating applied using the multifunctional coating method, and has an inner oleo-hydrophobic composite coating, beneath the inner oleo-hydrophobic composite coating a corrosion-resistant alloy coating, and beneath the corrosion-resistant alloy coating untreated pipe or any other metallic substrate.

Abstract: A method for manufacturing a fuel cell separator that ensures an improved corrosion resistance under usage environment of a fuel cell and restraining an increase of a contact resistance with a power generation unit by enhancing a sticking force of a conductive carbon film formed on a surface in contact with the power generation unit on a surface of a titanium substrate is provided. It is a method for manufacturing a fuel cell separator. The fuel cell separator includes a contact portion that is in contact with a power generation unit so as to partition the power generation units including electrodes of the fuel cell, and includes a conductive carbon film formed on the contact portion. First, a titanium substrate that has a plurality of projecting portions formed corresponding to a shape of the contact portion and recessed portions for gas flow channels formed between the projecting portions are prepared as a substrate of the separator.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.