Plasma (e.g., Cold Plasma, Corona, Glow Discharge, Etc.) Patents (Class 427/535)
  • Patent number: 11174299
    Abstract: Compositions comprising an isolated peptide, which may for example optionally comprise a sequence consisting of SVHSFDYDWYNV, or any cyclized version thereof, and methods of using same, including for treatment of or prevention of formation of microbial biofilms and against adhesion of a cell to a surface.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: November 16, 2021
    Assignee: DISPERSEBIO LTD.
    Inventor: Amir Zlotkin
  • Patent number: 11130941
    Abstract: The present disclosure relates to a method of fabricating a substrate for culturing stem cells, including forming a plasma polymer layer from a precursor material on a substrate using plasma, and the precursor material contains a heteroaromatic compound or a linear compound.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: September 28, 2021
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Donggeun Jung, Sungyool Kwon, Wonjin Ban, Hyuna Lim, Yoonsoo Park
  • Patent number: 11118644
    Abstract: The present invention discloses a vibration-damping and noise-reducing brake disc, where the vibration-damping and noise-reducing brake disc includes an intermediate disc having an outer side and a braking ring which surrounds the outer side of the intermediate disc. Two opposite surfaces of the braking ring are frictional surfaces provided with at least one laser scanning strip, where the laser scanning strip is obtained or formed by laser quenching and hardening treatments of the two frictional surfaces by a laser machine, for changing the physical and mechanical properties of the braking ring, such as the surface and inside hardness, residual stress distribution on the frictional surfaces, and the inside micro-structures of the braking ring, so as to suppress the generation of frictional vibration and noise during braking operations.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: September 14, 2021
    Assignee: UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY
    Inventors: Shuwen Wang, Huan Zhang, Xuegang Zhang, Wang Guo, Deyu Zhao
  • Patent number: 11121495
    Abstract: A contact pin for connecting a first electrical conductor made of copper or a copper alloy and a second electrical conductor made of aluminum or an aluminum alloy comprises a plug-in section, a connecting section, and a coating disposed at least on the connecting section. The plug-in section is adapted to couple to the first electrical conductor. The connecting section is adapted to connect to the second electrical conductor. The coating is corrosion-resistant and compatible with aluminum and copper.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: September 14, 2021
    Assignee: TE Connectivity Germany GmbH
    Inventors: Uwe Hauck, Helge Schmidt
  • Patent number: 11085125
    Abstract: A multifunctional coating method involves cleaning a surface, applying a layer of corrosion-resistant alloy coating to the surface, and applying an oleo-hydrophobic composite coating over the corrosion-resistant alloy coating. An oil and gas pipe has an inner surface with a multifunctional coating applied using the multifunctional coating method, and has an inner oleo-hydrophobic composite coating, beneath the inner oleo-hydrophobic composite coating a corrosion-resistant alloy coating, and beneath the corrosion-resistant alloy coating untreated pipe or any other metallic substrate.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: August 10, 2021
    Assignee: Oceanit Laboratories, Inc.
    Inventors: Ganesh Kumar Arumugam, Vinod Veedu, Matthew Nakatsuka
  • Patent number: 11069905
    Abstract: A method for manufacturing a fuel cell separator that ensures an improved corrosion resistance under usage environment of a fuel cell and restraining an increase of a contact resistance with a power generation unit by enhancing a sticking force of a conductive carbon film formed on a surface in contact with the power generation unit on a surface of a titanium substrate is provided. It is a method for manufacturing a fuel cell separator. The fuel cell separator includes a contact portion that is in contact with a power generation unit so as to partition the power generation units including electrodes of the fuel cell, and includes a conductive carbon film formed on the contact portion. First, a titanium substrate that has a plurality of projecting portions formed corresponding to a shape of the contact portion and recessed portions for gas flow channels formed between the projecting portions are prepared as a substrate of the separator.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: July 20, 2021
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Tsuyoshi Seguchi, Koutaro Ikeda, Yukihiro Shibata
  • Patent number: 10950731
    Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: March 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Yun Peng, Fu-Ting Yen, Ting-Ting Chen, Keng-Chu Lin, Tsu-Hsiu Perng
  • Patent number: 10861954
    Abstract: A device may include: a high-k layer disposed on a substrate and over a channel region in the substrate. The high-k layer may include a high-k dielectric material having one or more impurities therein, and the one or more impurities may include at least one of C, Cl, or N. The one or more impurities may have a molecular concentration of less than about 50%. The device may further include a cap layer over the high-k layer over the channel region, the high-k layer separating the cap layer and the substrate.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Cheng Chang, Yi-Ren Chen, Chang-Yin Chen, Yi-Jen Chen, Ming Zhu, Yung-Jung Chang, Harry-Hak-Lay Chuang
  • Patent number: 10752649
    Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: August 25, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, Atashi Basu, David Thompson, Nasrin Kazem
  • Patent number: 10519412
    Abstract: A stamp and a method for transferring particles to cells of a cell culture. The stamp includes a body having upper and lower surfaces. The lower surface includes a recessed portion. A gel extends along the recessed portion of the lower surface of the body and including the particles patterned therein. The body is configured to move between a first position wherein the gel is isolated from the cells of the cell culture and a second position wherein the particles patterned in the gel communicate with the cells of the cell culture through diffusion.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: December 31, 2019
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: David Beebe, Erwin Berthier, Mary Regier
  • Patent number: 10513136
    Abstract: In one aspect, a method is described. The method may include exposing a printing surface to a first plasma in order to increase a hydrophilicity of the printing surface. The method may further include, after increasing the hydrophilicity of the printing surface, depositing a printing material on the printing surface. Additionally, the method may include, after depositing the printing material on the printing surface, exposing the printing surface to a second plasma in order to increase a hydrophobicity of the printing surface.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: December 24, 2019
    Assignee: KYOCERA DOCUMENT SOLUTIONS INC.
    Inventor: Svetlana Paskalova
  • Patent number: 10480068
    Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: November 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sanjeev Baluja, Ren-Guan Duan, Kalyanjit Ghosh
  • Patent number: 10468262
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: November 5, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • Patent number: 10364492
    Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: July 30, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jeffrey W. Anthis, David Thompson, Ravi Kanjolia, Shaun Garrett
  • Patent number: 10222511
    Abstract: The invention relates to an optical article comprising a substrate coated with an abrasion and scratch resistant coating composed of a lower layer and an upper layer that do adhere to each other, the upper layer and the lower layer being layers of cured upper and lower layer compositions, said upper layer composition comprising at least one organosilane, or a hydrolyzate thereof, of formula RnYmSi(X)4-n-m and at least one compound, or a hydrolyzate thereof, of formula M(Z)x, the following ratio being lower than 2.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: March 5, 2019
    Assignee: Essilor International (Compagnie Generale d'Optique)
    Inventors: Fabien Berit-Debat, Christian Bovet, Jean-Paul Cano, Amélie Kudla, Yves Leclaire
  • Patent number: 10221481
    Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: March 5, 2019
    Assignee: MERCK PATENT GMBH
    Inventors: Ravi Kanjolia, Shaun Garratt, David Thompson, Jeffrey Anthis
  • Patent number: 10065361
    Abstract: Embodiments of the present disclosure are drawn to additive manufacturing apparatus and methods. An exemplary apparatus for fabricating components via additive manufacturing may include a programmable CNC machine. The CNC machine may comprise a first worktable extending in a first plane and a second worktable extending in a second plane, wherein the second plane is oriented at an angle relative to the first plane. At least one conveyor belt may be operably coupled to the first worktable. A printing gantry may be displaceable along a first axis of the CNC machine. The CNC machine may also comprise an applicator having a nozzle configured to deposit material on the second worktable.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: September 4, 2018
    Assignee: Thermwood Corporation
    Inventors: Kenneth J. Susnjara, Brian S. Smiddy, Jonathan I. Fuquay
  • Patent number: 9911622
    Abstract: Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: March 6, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Tomoyuki Oishi, Masanobu Honda
  • Patent number: 9865456
    Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: January 9, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Sumeet C. Pandey, Brenda D. Kraus, Stefan Uhlenbrock, John A. Smythe, Timothy A. Quick
  • Patent number: 9799867
    Abstract: An object of the present invention is to provide a laminated porous film excellent in handling ability. A laminated porous film having a layer containing a polymer other than a polyolefin laminated on at least one surface of a polyolefin porous film, wherein the uplift quantity of a side perpendicular to the machine direction, when allowed to stand still for 1 hour under an environment of a temperature of 23° C. and a humidity of 50%, is 15 mm or less.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: October 24, 2017
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Takeshi Kawakami, Jian Wang, Yasutoshi Minemoto, Satoshi Yoneyama
  • Patent number: 9614182
    Abstract: A method of manufacturing a display apparatus, the method including forming a display device on a substrate; and forming a thin-film encapsulation layer on the display device, the thin-film encapsulation layer including at least one inorganic layer that includes low-temperature viscosity transition (LVT) inorganic materials, wherein forming the thin-film encapsulation layer includes irradiating energy beams toward the thin-film encapsulation layer during formation of the thin-film encapsulation layer.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: April 4, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Jai-Hyuk Choi
  • Patent number: 9481804
    Abstract: An electroconductive ink composition comprising silver particles (A), a compound having a siloxane backbone with a functional group (B), and an organic solvent (C), the silver particles (A) having a protective layer containing an amino group-containing compound and having a mean particle size of 1 nm or more and 100 nm or less, the content of the compound (B) being 4% by weight to 8% by weight based on the total amount of the composition, can form a circuit pattern on a polymer film with low heat resistance, and the obtained circuit pattern has excellent adhesion to a substrate and high conductivity.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: November 1, 2016
    Assignee: OSAKA SODA CO., LTD.
    Inventors: Kensuke Kawamura, Hideaki Umakoshi
  • Patent number: 9475312
    Abstract: An ink jet printer includes a transport mechanism that transports a medium in a first direction; and a carriage that includes a plasma irradiation mechanism, which emits plasma generated in a discharge portion from a plasma irradiation port and then irradiates at least a part of the medium with the plasma, and a head which ejects ink onto the part of the medium which is irradiated with the plasma, and that moves in a second direction intersecting with the first direction, in which the plasma irradiation mechanism is provided on one side of the head in the second direction, and the discharge portion of the plasma irradiation mechanism is disposed so as not to come in contact with the medium.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: October 25, 2016
    Assignee: Seiko Epson Corporation
    Inventors: Kenji Kitada, Takuya Miyakawa, Takashi Saiba, Kiyofumi Kitawada, Atsushi Denda, Maki Nariai
  • Patent number: 9415614
    Abstract: A recording apparatus includes a supply reel configured and arranged to supply a recording medium, a recording section configured and arranged to record an image to the recording medium, a first conveyance route along which the recording medium is conveyed to the recording section, a post-treatment section configured and arranged to carry out a post-treatment on the recording medium after recording the image to the recording medium, a third conveyance route along which the recording medium is conveyed from the recording section to the post-treatment section, a take-up reel configured and arranged to take-up the recording medium, and a fourth conveyance route along which the recording medium is conveyed from the post-treatment section to the take-up reel, the third conveyance route including a third bend section at a location between an outlet of the recording section and an inlet of the post-treatment section.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: August 16, 2016
    Assignee: Seiko Epson Corporation
    Inventor: Yoichiro Irie
  • Patent number: 9384966
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9384972
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer by supplying a gas containing a second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9384971
    Abstract: Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element under a condition where chemical adsorption of a molecule constituting the gas containing the first element is not saturated; forming a second layer including the first layer and a layer including a second element stacked on the first layer by supplying a gas containing the second element under a condition where chemical adsorption of a molecule constituting the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9384970
    Abstract: Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9384969
    Abstract: Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including the first element by supplying a gas containing the first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9384967
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a first element, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9384968
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer including the second layer and a discontinuous layer including a third element stacked on the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: July 5, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9362034
    Abstract: The present invention relates to a core-shell structured nanoparticle having hard-soft heterostructure, magnet prepared from the nanoparticle, and preparing method thereof. The core-shell structured nanoparticle having hard-soft magnetic heterostructure of present invention has some merits such as independence from resource supply problem of rare earth elements and low price and can overcome physical and magnetic limitations possessed by the conventional ferrite mono-phased material.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: June 7, 2016
    Assignees: LG ELECTRONICS INC., INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Jongryoul Kim, Jinbae Kim, Namseok Kang, Sanggeun Cho
  • Patent number: 9353437
    Abstract: The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: May 31, 2016
    Assignee: UP Chemical Co., Ltd.
    Inventor: Won Seok Han
  • Patent number: 9112088
    Abstract: Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: August 18, 2015
    Assignee: KYOCERA Corporation
    Inventors: Koichiro Niira, Norikazu Ito, Shinichiro Inaba
  • Patent number: 9074111
    Abstract: Described herein is a method of making a multi-layer article and paint protective films, wherein a mixture comprising a polyurethane coating solution and a plurality of nanoparticles is coated onto a casting liner to form a first layer; and a thermoplastic polyurethane is disposed onto the first layer opposite the casting liner. Multi-layer articles by the process of the present disclosure have been found to be resistant to compositions comprising strong acids and/or a functionalized organosilane.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: July 7, 2015
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventor: Charlie C. Ho
  • Patent number: 9067171
    Abstract: The present invention discloses a process for producing a membrane for separating methane or carbon dioxide, having excellent heat resistance, durability and anti-chemical agent resistance (anti-corrosion resistance). The present invention is related to a process for producing a membrane for separating methane or carbon dioxide, which comprises the following steps: (a) preparing a metal alkoxide solution by (i) mixing an acid catalyst, water and an organic solvent, (ii) adding thereto tetraalkoxysilane and mixing, and (iii) then adding thereto a hydrocarbon group-containing trialkoxysilane, of which a hydrocarbon group is selected from the group consisting of an alkyl group having 1 to 6 carbon atoms and a phenyl group, and mixing, (b) applying the metal alkoxide solution on an inorganic porous support, and then (c) calcining the inorganic porous support having metal alkoxide solution layer at a temperature of 30 to 300° C.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: June 30, 2015
    Assignee: TOYO TIRE & RUBBER CO., LTD.
    Inventors: Tomohiko Kurahashi, Masaji Ishino, Kouji Kuraoka
  • Publication number: 20150147482
    Abstract: Methods and apparatus disclosed herein relate to the formation and use of undercoats on the interior surfaces of reaction chambers used to deposit films on substrates. The undercoats are deposited through atomic layer deposition methods. The disclosed undercoats help prevent metal contamination, provide improved resistance to flaking, and are relatively thin. Because of the superior resistance to flaking, the disclosed undercoats allow more substrates to be processed between subsequent cleaning operations, thereby increasing throughput.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 28, 2015
    Applicant: Lam Research Corporation
    Inventors: Hu Kang, Jun Qian, Adrien LaVoie
  • Publication number: 20150147483
    Abstract: A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.
    Type: Application
    Filed: November 26, 2013
    Publication date: May 28, 2015
    Applicant: ASM IP Holding B.V.
    Inventor: Atsuki Fukazawa
  • Publication number: 20150147484
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Application
    Filed: November 5, 2014
    Publication date: May 28, 2015
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Publication number: 20150140233
    Abstract: Methods for depositing cobalt in features of a substrate include providing a substrate to a process chamber, the substrate having a first surface, a feature formed in the first surface comprising an opening defined by one or more sidewalls, a bottom surface, and upper corners, and the substrate having a first layer formed atop the first surface and the opening, wherein a thickness of the first layer is greater proximate the upper corners of the opening than at the sidewalls and bottom of the opening; exposing the substrate to a plasma formed from a silicon-containing gas to deposit a silicon layer predominantly onto a portion of the first layer atop the first surface of the substrate; and depositing a cobalt layer atop the substrate to fill the opening, wherein the silicon layer inhibits deposition of cobalt on the portion of the first layer atop the first surface of the substrate.
    Type: Application
    Filed: November 17, 2014
    Publication date: May 21, 2015
    Inventors: BHUSHAN N. ZOPE, AVGERINOS V. GELATOS
  • Publication number: 20150141293
    Abstract: The invention provides a method for increasing the order of an array of polymeric micelles or of nanoparticles on a substrate surface comprising a) providing an ordered array of micelles or nanoparticles coated with a polymer shell on a substrate surface and b) annealing the array of micelles or nanoparticles by ultrasonication in a liquid medium which is selected from the group comprising H2O, a polar organic solvent and a mixture of H2O and a polar organic solvent. In a related aspect, the invention provides the highly ordered arrays of micelles or nanoparticles obtainable by the methods of the invention.
    Type: Application
    Filed: May 15, 2013
    Publication date: May 21, 2015
    Inventors: Christian Williges, Christoph Morhard, Joachim P. Spatz, Robert B. Brunner
  • Patent number: 9034414
    Abstract: The object of the present invention is to provide a joint prosthesis, bearing material and a production method thereof, which suppresses wear in a sliding section and suppresses the production of abrasive powder even during repeated daily operation. To achieve the object, there is provided a biomaterial comprising: a substrate made of metal, alloy or ceramic; and a biocompatible material layer laminated on the substrate, wherein hydroxyl groups are formed on the substrate by surface-treating, while the biocompatible material layer comprises a polymer containing phosphorylcholine groups, the substrate and the biocompatible material layer are bound via a binder layer which is combined with the hydroxyl groups of the substrate and with the biocompatible material layer.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: May 19, 2015
    Assignees: KYOCERA MEDICAL CORPORATION, THE UNIVERSITY OF TOKYO, NATIONAL UNIVERSITY CORPORATION TOKYO MEDICAL AND DENTAL UNIVERSITY
    Inventors: Masayuki Kyomoto, Kazuhiko Ishihara, Yasuhiko Iwasaki, Toru Moro, Kozo Nakamura, Yoshio Takatori, Hiroshi Kawaguchi, Tomohiro Konno, Noboru Yamawaki
  • Publication number: 20150123518
    Abstract: A plastic member, on which a metal layer is formed on a surface of a plastic object, a method of manufacturing the same, and an electronic product including the same are provided. The method of manufacturing a multilayer thin film includes modifying a surface of a plastic object using a plasma treatment, depositing a reflective metal layer on the surface of the plastic object, and depositing a transparent ceramic layer on the reflective metal layer.
    Type: Application
    Filed: October 31, 2014
    Publication date: May 7, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seo Joon LEE, Jin Sub KIM, Hyong Jun YOO, Min Chul JUNG, Jin Hyun CHO
  • Publication number: 20150125640
    Abstract: A manufacturing method that forms a multilayer thin film on the inner surface of a housing forming a transparent appearance of an electronic product to provide a deep metal texture and an electronic product having a metal texture provided at the inner surface of the housing. The multilayer thin film manufacturing method includes reforming an inner surface of a housing having an outer surface and the inner surface through plasma processing, depositing at least one hardness reinforcement layer on the inner surface, and depositing a color layer on the hardness reinforcement layer.
    Type: Application
    Filed: October 31, 2014
    Publication date: May 7, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seo Joon LEE, Jin Sub KIM, Hyong Jun YOO, Min Chul JUNG, Jin Hyun CHO
  • Publication number: 20150124325
    Abstract: A glazing unit including a transparent substrate equipped with an antireflection coating, which coating includes at least one film of a porous material essentially including silicon, oxygen, carbon and possibly hydrogen, in which the atomic proportion PC of carbon, relative to the sum of the atomic contributions of silicon, oxygen and carbon, varies locally in the thickness direction of the film, from a first surface to a second surface thereof: increasing between a first minimum value PCmin1 and a maximum value PCmax, the ratio of the maximum value PCmax to the first minimum value PCmin1 being at least 1.2; and the proportion of carbon then decreasing, between the maximum value PCmax and a second minimum value PCmin2, the ratio of the maximum value PCmax to the second minimum value PCmin2 being at least 1.2.
    Type: Application
    Filed: August 6, 2012
    Publication date: May 7, 2015
    Applicant: SAINT-GOBAIN GLASS FRANCE
    Inventors: Jean-Christophe Giron, Christian Bernhard Petersen, Martin Melcher, Nicolas Nadaud
  • Publication number: 20150125621
    Abstract: The disclosure relates to processes of preparing coated carrier particles by means of plasma activation and apparatus for use thereof.
    Type: Application
    Filed: November 4, 2013
    Publication date: May 7, 2015
    Applicant: XEROX CORPORATION
    Inventors: Joo T. Chung, Bernard A. Kelly, Brian S. Giannetto, Chieh-Min Cheng, Thomas C. Dombroski
  • Publication number: 20150118408
    Abstract: A wet coating method is described, which includes the following steps. A film coating is applied to at least one surface of a substrate using a wet process. A plasma-assisted filling treatment is performed on the film coating to crystallize the film coating into a film. The plasma-assisted filling treatment includes using a filling coating.
    Type: Application
    Filed: December 19, 2013
    Publication date: April 30, 2015
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Chau-Nan HONG, Chun-Chia YEH, Hsiang-En HSU, Ke-Fong LI, Cyun-Jhe YAN, Chung-Sheng CHIANG, Yu-Ling CHENG
  • Patent number: 9017773
    Abstract: A method is described for depositing nanostructures, such as nanostructures of conducting polymers, carbon nanostructures, or combinations thereof. The process comprises placing the nanostructures in a liquid composition comprising an immiscible combination of aqueous phase and an organic phase. The mixture is mixed for a period of time sufficient to form an emulsion and then allowed to stand undisturbed so that the phases are allowed to separate. As a result the nanostructure materials locate at the interface of the forming phases and are uniformly dispersed along that interface. A film of the nanostructure materials will then form on a substrate intersecting the interface, said substrate having been placed in the mixture before the phases are allowed to settle and separate.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: April 28, 2015
    Assignee: The Regents of the University of California
    Inventors: Julio M. D'Arcy, Richard B. Kaner
  • Publication number: 20150110969
    Abstract: A process for a low temperature, ion-assisted, evaporation technique (IAD), whereby the coating stress of a silicon film may be manipulated from compressive to tensile, in order to produce a near-zero net stress for the complete layer. A Si cladding with little intrinsic stress is essential to allow thick coatings to be manufactured without cracking. A low stress coating also minimizes substrate bending that would otherwise distort the figure of very lightweight mirrors.
    Type: Application
    Filed: October 1, 2014
    Publication date: April 23, 2015
    Inventor: David A. Sheikh
  • Publication number: 20150111039
    Abstract: The embodiments described herein pertain generally to a preparing method of a reduced graphene oxide film, a reduced graphene oxide film prepared by the preparing method, a graphene electrode including the reduced graphene oxide film, an organic thin film transistor including the graphene electrode, and an antistatic film including the reduced graphene oxide film.
    Type: Application
    Filed: March 20, 2014
    Publication date: April 23, 2015
    Applicant: SNU R&DB FOUNDATION
    Inventors: Sung Hyun KIM, Jyongsik JANG, Kyoung-Hwan SHIN