Silicon Oxides Or Nitrides Patents (Class 427/579)
  • Patent number: 10748758
    Abstract: A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: August 18, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Yutaka Takahashi, Kazumi Kubo
  • Patent number: 10643825
    Abstract: A particle generation preventing method for preventing particle generation in a vacuum apparatus including an alumite-treated component is provided. The particle generation preventing method includes an evacuation step of evacuating the vacuum apparatus to reduce a pressure within the vacuum apparatus to less than or equal to 1.3×10?1 Pa (1 mTorr), a pressure increasing step of increasing the pressure within the vacuum apparatus to atmospheric pressure after the evacuation step, and a moisture adhesion step of causing moisture to be adhered to the alumite-treated component after the pressure increasing step.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: May 5, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Tetsuka, Hiroshi Nagaike, Masatomo Kita, Chihiro Sato, Naoya Suenaga
  • Patent number: 10615085
    Abstract: An embodiment provides a method of predicting a thickness of an oxide layer of a silicon wafer including: aging a heat treatment furnace (furnace); measuring a thickness of each of the oxide layers after disposing a plurality of reference wafers in slots of a heat treatment boat in the furnace and forming oxide layers; and measuring a thickness of each of the oxide layers after disposing the plurality of reference wafers and test wafers in the slots of the heat treatment boat in the furnace and forming oxide layers.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: April 7, 2020
    Assignee: SK Siltron Co., Ltd.
    Inventors: Jung Kil Park, Sung Woo Jung, Ja Young Kim
  • Patent number: 10559459
    Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: February 11, 2020
    Assignees: TAIYO NIPPON SANSO CORPORATION, SPP TECHNOLOGIES CO., LTD.
    Inventors: Hiroshi Taka, Masaya Yamawaki, Shoichi Murakami, Masayasu Hatashita
  • Patent number: 10464953
    Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A: wherein R, R1, R2, R3, R4, and R5 are defined herein.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: November 5, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Meiliang Wang, Xinjian Lei, Manchao Xiao, Suresh Kalpatu Rajaraman
  • Patent number: 10431452
    Abstract: A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: October 1, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Takahashi, Masahiro Murata
  • Patent number: 10050230
    Abstract: The present invention provides an OLED display and a manufacturing method thereof. The OLED display of the present invention is such that in a thin film encapsulation layer, an inorganic passivation that is located under and adjacent to each organic buffer layer forms a stepped zone at a portion between an outer edge of the organic buffer layer and an outer edge of the inorganic passivation layer and each stepped zone is provided with a DLC layer that covers the stepped zone. In other words, the present invention uses DLC for later side encapsulation and in the thin film encapsulation layer, each organic buffer layer is provided, on an outer side thereof, with a DLC layer to thereby effectively block external moisture and oxygen from attacking the OLED device from a lateral side and also to eliminate an issue of loss for light of a top emission device to travel through DLC.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: August 14, 2018
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiangjiang Jin, Hsianglun Hsu
  • Patent number: 9991154
    Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: June 5, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei Ken Lin, Jia-Ming Lin, Hsien-Che Teng, Yung-Chou Shih, Kun-Dian She, Lichia Yang, Yun-Wen Chu
  • Patent number: 9922820
    Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: March 20, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Noriaki Fukiage, Takayuki Karakawa, Toyohiro Kamada, Akihiro Kuribayashi, Takeshi Oyama, Jun Ogawa
  • Patent number: 9831068
    Abstract: A method activates the inner surface of a substrate tube via plasma etching with a fluorine-containing etching gas. An exemplary method includes the steps of (i) supplying a supply flow of gas to the interior of a substrate tube, wherein the supply flow includes a main gas flow and a fluorine-containing etching gas flow, (ii) inducing a plasma via electromagnetic radiation to create a plasma zone within the substrate tube's interior, and (iii) longitudinally reciprocating the plasma zone over the length of the substrate tube between a reversal point near the supply side and a reversal point near the discharge side of the substrate tube. The flow of the fluorine-containing etching gas is typically provided when the plasma zone is near the supply side reversal point.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: November 28, 2017
    Assignee: Draka Comteq, B.V.
    Inventors: Igor Milicevic, Gertjan Krabshuis, Mattheus Jacobus Nicolaas Van Stralen, Peter Gerharts, Johannes Antoon Hartsuiker
  • Patent number: 9498846
    Abstract: Systems and methods for preventing or reducing contamination enhanced laser induced damage (C-LID) to optical components are provided including a housing enclosing an optical component, a container configured to hold a gas phase additive and operatively coupled to the housing; and a delivery system configured to introduce the gas phase additive from the container into the housing and to maintain the gas phase additive at a pre-selected partial pressure within the housing. The gas phase additive may have a greater affinity for the optical component than does a contaminant and may be present in an amount sufficient to inhibit laser induced damage resulting from contact between the contaminant and the optical component. The housing may be configured to maintain a sealed gas environment or vacuum.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: November 22, 2016
    Assignee: The Aerospace Corporation
    Inventors: Bruce H. Weiller, Randy M. Villahermosa, Jesse D. Fowler
  • Patent number: 9373514
    Abstract: An electronic device includes a substrate with a semiconducting surface having a plurality of fin-type projections coextending in a first direction through a memory cell region and select gate regions. The electronic device further includes a dielectric isolation material disposed in spaces between the projections. In the electronic device, the dielectric isolation material in the memory cell regions have a height less than a height of the projections in the memory cell regions, and the dielectric isolation material in the select gate regions have a height greater than or equal to than a height of the projections in the select gate regions. The electronic device further includes gate features disposed on the substrate within the memory cell region and the select gate regions over the projections and the dielectric isolation material, where the gate features coextend in a second direction transverse to the first direction.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: June 21, 2016
    Assignee: Cypress Semiconductor Corporation
    Inventors: Chun Chen, Shenqing Fang
  • Patent number: 9349587
    Abstract: In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: May 24, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshiro Hirose, Atsushi Sano, Kazuyuki Okuda, Kiyohiko Maeda
  • Patent number: 9245741
    Abstract: Disclosed is a method of forming a nitride film on an object to be processed (“processed object”). The method includes a step (step (a)) of exposing the processed object to dichlorosilane which is a precursor gas and a step (step (b)) of exposing the processed object to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after step (a). Alternatively, step (a) and step (b) may be alternately repeated and a step of removing dichlorosilane (step (c)) may be further provided between step (a) and step (b).
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: January 26, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Karakawa
  • Patent number: 9219160
    Abstract: A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes oxygen and silicon, a gate electrode adjacent to the oxide semiconductor film, the oxide semiconductor film provided to be in contact with the insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the interface with the insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: December 22, 2015
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
  • Patent number: 9218966
    Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. Provided is a semiconductor device including the following: an oxide semiconductor film which serves as a semiconductor layer; a gate insulating film including an oxide containing silicon, over the oxide semiconductor film; a gate electrode which overlaps with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film overlapping with at least the gate electrode includes a region in which a concentration of silicon distributed from the interface with the gate insulating film toward the inside of the oxide semiconductor film is lower than or equal to 1.1 at. %.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: December 22, 2015
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Shunpei Yamazaki
  • Patent number: 9190298
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate, and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second precursor including the predetermined element and the halogen group to the substrate, and supplying a third precursor to the substrate.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: November 17, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Katsuyoshi Harada, Yoshiro Hirose, Tsukasa Kamakura, Atsushi Sano, Yugo Orihashi
  • Patent number: 9109754
    Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: August 18, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Mei Chang, Faruk Gungor, Paul F. Ma, David Chu, Chien-Teh Kao, Hyman Lam, Dien-Yeh Wu
  • Publication number: 20150147484
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Application
    Filed: November 5, 2014
    Publication date: May 28, 2015
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Patent number: 9028925
    Abstract: A product having a functional layer and a method for fabricating the same. A method for fabricating a product having a functional layer includes the step of conducting a plasma reaction with titanium and silicon precursor compounds to form a coating on a substrate, such as a heat exchanger surface.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: May 12, 2015
    Assignee: LG Electronics Inc.
    Inventors: Jinhyouk Shin, MoonKap Lee, Junggeun Oh, Jeonggyu Kim
  • Patent number: 9028924
    Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.
    Type: Grant
    Filed: November 7, 2012
    Date of Patent: May 12, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Jason Haverkamp, Pramod Subramonium, Joe Womack, Dong Niu, Keith Fox, John Alexy, Patrick Breiling, Jennifer O'Loughlin, Mandyam Sriram, George Andrew Antonelli, Bart van Schravendijk
  • Publication number: 20150125629
    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.
    Type: Application
    Filed: October 29, 2014
    Publication date: May 7, 2015
    Inventors: Young Hoon KIM, Dae Youn Kim, Sang Wook Lee
  • Publication number: 20150125628
    Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.
    Type: Application
    Filed: May 23, 2014
    Publication date: May 7, 2015
    Applicant: ASM IP Holding B.V.
    Inventors: Dae Youn KIM, Seung Woo CHOI, Young Hoon KIM, Seiji OKURA, Hyung Wook NOH, Dong Seok KANG
  • Publication number: 20150110974
    Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.
    Type: Application
    Filed: July 29, 2014
    Publication date: April 23, 2015
    Inventors: Yong-Suk LEE, Suk-Won Jung, Myung-Soo Huh, Mi-Ra An
  • Patent number: 9011985
    Abstract: A process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: April 21, 2015
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Akira Hasegawa, Toshiya Kuroda, Takashi Sanada
  • Patent number: 9005719
    Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: April 14, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
  • Patent number: 8993072
    Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p??I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
    Type: Grant
    Filed: September 18, 2012
    Date of Patent: March 31, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Mark Leonard O'Neill, Bing Han, Ronald Martin Pearlstein, Haripin Chandra, Heather Regina Bowen, Agnes Derecskei-Kovacs
  • Patent number: 8986794
    Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: March 24, 2015
    Assignees: Samsung Display Co., Ltd., Industry-University Cooperation Foundation Hanyang University Erica Campus
    Inventors: Sang-Joon Seo, Jae-Eung Oh
  • Publication number: 20150079311
    Abstract: A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and/or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.
    Type: Application
    Filed: September 19, 2013
    Publication date: March 19, 2015
    Applicant: ASM IP Holding B.V.
    Inventors: Ryu Nakano, Naoki Inoue
  • Patent number: 8980382
    Abstract: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: March 17, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Ingle, Abhijit Basu Mallick, Earl Osman Solis, Nicolay Kovarsky, Olga Lyubimova
  • Patent number: 8974872
    Abstract: A process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: March 10, 2015
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Akira Hasegawa, Toshiya Kuroda, Takashi Sanada
  • Publication number: 20150050478
    Abstract: A gas barrier film including a substrate of which the surface is formed of an organic material; an inorganic film which is formed on the substrate and contains silicon nitride; and a mixed layer which is formed in an interface between the substrate and the inorganic film, and contains components derived from the organic material and the inorganic film, wherein a compositional ratio N/Si between nitrogen and silicon contained in the inorganic film is 1.00 to 1.35, the inorganic film has a film density of 2.1 g/cm3 to 2.4 g/cm3 and a film thickness of 10 nm to 60 nm, and the mixed layer has a thickness of 5 nm to 40 nm.
    Type: Application
    Filed: September 26, 2014
    Publication date: February 19, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Yoshihiko MOCHIZUKI, Jun FUJINAWA
  • Patent number: 8956984
    Abstract: Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: February 17, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventor: Kazuyuki Okuda
  • Publication number: 20150029681
    Abstract: A flexible composite comprising a plastic foil, having an upper and a lower surface, and at least one dielectric barrier layer against gases and liquids which is applied directly to at least one of the surfaces by plasma-enhanced thermal vapor deposition and comprises an inorganic vapor-depositable material, is provided. The flexible composite can be used for constructing flexible circuits or displays and has a high barrier effect with regard to oxygen and/or water vapor.
    Type: Application
    Filed: July 11, 2014
    Publication date: January 29, 2015
    Applicant: EVONIK INDUSTRIES AG
    Inventors: Helmut MACK, Philipp ALBERT, Bjoern BORUP, Anil K. SAXENA
  • Patent number: 8926745
    Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: January 6, 2015
    Assignee: Nanmat Technology Co., Ltd.
    Inventors: Cheng-Jye Chu, Chih-Hung Chen
  • Publication number: 20150004332
    Abstract: A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.
    Type: Application
    Filed: June 13, 2014
    Publication date: January 1, 2015
    Inventors: Hitoshi KATO, Masahiro MURATA, Kentaro OSHIMO, Shigehiro MIURA
  • Publication number: 20140349107
    Abstract: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer mad of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1<P2<P3<P4 and (P2-P1)+(P4-P3)<E the distance between P1 and P2 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer.
    Type: Application
    Filed: November 14, 2012
    Publication date: November 27, 2014
    Applicant: SAINT-GOBAIN GLASS FRANCE
    Inventors: Claire Thoumazet, Martin Melcher, Arnaud Huignard, Raphael Lante
  • Publication number: 20140349033
    Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.
    Type: Application
    Filed: May 23, 2013
    Publication date: November 27, 2014
    Applicant: ASM IP Holding B.V.
    Inventors: Yuya Nonaka, Fumitaka Shoji, Hiroki Arai
  • Patent number: 8895456
    Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: November 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Mitsuhiro Tachibana, Hiroaki Ikegawa, Yu Wamura, Muneyuki Otani, Jun Ogawa, Kosuke Takahashi
  • Patent number: 8889235
    Abstract: A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR?y(NR?R??)zSi wherein R, R?, R? and R?? are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R? cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio >0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.
    Type: Grant
    Filed: May 3, 2010
    Date of Patent: November 18, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Anupama Mallikarjunan, Raymond Nicholas Vrtis, Laura M. Matz, Mark Leonard O'Neill, Andrew David Johnson, Manchao Xiao
  • Publication number: 20140332437
    Abstract: There are provided a food container having improved oxygen barrier properties and a manufacturing method thereof. The food container includes a container made of a plastic material, a buffer thin layer formed on a surface of the container and having a thickness of 5 to 30 nm, and an oxygen barrier thin layer formed on the buffer thin layer. Accordingly, it is possible to provide a food container and a manufacturing method thereof, which can remarkably improve oxygen barrier properties by depositing, using a plasma method, an oxygen barrier thin layer on a porous plastic container having low surface energy without breaking the oxygen barrier thin layer.
    Type: Application
    Filed: February 28, 2013
    Publication date: November 13, 2014
    Inventors: Kwang Ryeol Lee, Myoung Woon Moon, Seong Jin Kim, Eun Kyung Song, Kyoung Sik Jo, Tae Kyung Yun
  • Patent number: 8883269
    Abstract: A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: November 11, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tae Kyung Won, Helinda Nominanda, Seon-Mee Cho, Soo Young Choi, Beom Soo Park, John M. White, Suhail Anwar, Jozef Kudela
  • Patent number: 8883257
    Abstract: Disclosed herein is a method for producing a plastic container coated with a thin film that is excellent in gas barrier properties, film coloration and film adhesiveness without using an external electrode having a special shape while suppressing deposition of foreign matters such as carbon powders.
    Type: Grant
    Filed: June 25, 2009
    Date of Patent: November 11, 2014
    Assignee: Kirin Beer Kabushiki Kaisha
    Inventors: Masaki Nakaya, Mari Shimizu
  • Patent number: 8877299
    Abstract: A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: November 4, 2014
    Assignee: TEL Epion Inc.
    Inventors: John J. Hautala, Nathan E. Baxter, Koji Yamashita
  • Publication number: 20140314897
    Abstract: Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.
    Type: Application
    Filed: March 17, 2014
    Publication date: October 23, 2014
    Applicant: MOLECULAR IMPRINTS, INC.
    Inventors: Se Hyun Ahn, Byung-Jin Choi, Frank Y. Xu
  • Publication number: 20140287164
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Application
    Filed: June 1, 2012
    Publication date: September 25, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Joseph Karwacki, JR., Bing Han, Mark Leonard O'Neill
  • Publication number: 20140272194
    Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
    Type: Application
    Filed: May 30, 2014
    Publication date: September 18, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
  • Patent number: 8828505
    Abstract: The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: September 9, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney, Eugene Joseph Karwacki, Jr.
  • Publication number: 20140242364
    Abstract: The invention relates to blends of special copolycarbonates and special polyetherimides or special polyarylsulfones which have good metallizability and to compositions of said copolycarbonate blends optionally containing additives which are selected from the group of thermo stabilizers and release agents, to the use thereof for producing molded parts and to molded parts produced therefrom. The invention further relates to multilayer products comprising a substrate which contains the compositions according to the invention, said products comprising at least one further layer, preferably a metal layer, on at least one side, and to methods for producing said products.
    Type: Application
    Filed: October 5, 2012
    Publication date: August 28, 2014
    Inventors: Alexander Meyer, Rafael Oser
  • Patent number: RE47440
    Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: June 18, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Mei Chang, Faruk Gungor, Paul F. Ma, David Chu, Chien-Teh Kao, Hyman Lam, Dien-Yeh Wu