Abstract: The present invention provides a polycrystalline silicon rod whose rod surface portion has a phosphorus concentration of 0.015 ppba or less, in which the ratio (P2/P1) of the phosphorus concentration (P2) of the rod center portion to the phosphorus concentration (P1) of the rod surface portion is within the range of 2 or lower. The present invention also provides a method for producing a polycrystalline silicon rod by the Siemens method that assembles a polycrystalline silicon seed rod in a reactor, then heats the seed rod up to a temperature of 1000° C. or more and less than the melting point of silicon by energization heating, and supplies a raw material gas including trichlorosilane gas and hydrogen gas as the main components to the reactor at the heating temperature to deposit and grow silicon on the seed rod surface.

Abstract: Switches (S1-S3) allow switching between parallel/series configuration in a circuit (16) provided between two pairs of U-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a variable-frequency, high-frequency power source is used high-frequency current having a frequency of not less than 2 kHz. The two pairs of U-shaped silicon cores (12) are connected to each other in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating of the silicon cores (12) can be performed by supplying a high-frequency current having a frequency of less than 2 kHz to the series-connected U-shaped silicon cores (12) (or polycrystalline silicon rods (11)).

Abstract: Switches (S1-S3) allow switching between parallel/series configuration in a circuit (16) provided between two pairs of U-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a high-frequency current having a frequency of not less than 2 kHz. The two pairs of U-shaped silicon cores (12) (or polycrystalline silicon rods (11)) are connected to each other in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating of the silicon cores (12) can be performed by supplying a high-frequency current having a frequency of less than 2 kHz to the series-connected U-shaped silicon cores (12) (or polycrystalline silicon rods (11)).

Abstract: Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a head; a first body part connected with the head, located under the head, the first body part having a first reaction pipe provided therein; a second body part connected with the first body part, located under the first body part, the second body part having a second reaction pipe provided therein; and a bottom part connected with the second body part, located under the second body part, the bottom part having a flowing-gas supply nozzle, a reaction gas supply nozzle, a heater and an electrode assembled thereto.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas comprising silicon elements to the silicon particles provided in the reaction pipe; and a heater unit configured to supply heat to an internal space of the reaction pipe, with a heater channel in which inert gas flows serially.

Abstract: An apparatus and method for applying a voltage across silicon rods in a CVD reactor has a series connection wherein the silicon rods may be inserted as resistors. A first power supply unit has first transformers connected with one silicon rod. A second power supply unit has second transformers connected to the same number of silicon rods as the first transformers in parallel to one or more of the first transformers. The second transformers have an open circuit voltage lower than the first transformers and a short circuit current higher than the first transformers. A third power supply unit has outputs connected with the silicon rods in parallel to the first and second transformers. The third power supply unit is capable of providing a current in a voltage range below the open circuit voltage of the second transformer and higher than the short circuit current of the second transformer.

Abstract: A method for manufacturing a negative electrode active material for a secondary battery that uses a non-aqueous electrolyte, including the steps of: depositing silicon according to an electron beam vapor-deposition method with metallic silicon as a raw material on a substrate of which temperature is controlled from 800 to 1100° C. at a vapor deposition rate exceeding 1 kg/hr in the range of film thickness of 2 to 30 mm; and pulverizing and classifying the deposited silicon to obtain the negative electrode active material. As a result, there is provided a method for manufacturing a negative electrode active material of silicon particles as an active material useful for a negative electrode of a non-aqueous electrolyte secondary battery that is, while maintaining high initial efficiency and battery capacity of silicon, excellent in the cycle characteristics and has a reduced volume change during charge/discharge.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: A method to grow a boule of silicon carbide is described. The method may include flowing a silicon-containing precursor and a carbon-containing precursor proximate to a heated filament array and forming the silicon carbide boule on a substrate from reactions of the heated silicon-containing and carbon-containing precursors. Also, an apparatus for growing a silicon carbide boule is described. The apparatus may include a deposition chamber to deposit silicon carbide on a substrate, and a precursor transport system for introducing silicon-containing and carbon-containing precursors into the deposition chamber. The apparatus may also include at least one filament or filament segment capable of being heated to a temperature that can activate the precursors, and a substrate pedestal to hold a deposition substrate upon which the silicon carbide boule is grown. The pedestal may be operable to change the distance between the substrate and the filament as the silicon carbide boule is grown.

Abstract: A process for manufacturing a permeable dielectric film, includes the deposition on a substrate of a film constituted of a material comprising silicon, carbon, hydrogen, oxygen and, possibly, nitrogen and/or fluorine, a majority of Si—C bonds and a proportion of Si—O bonds such that the oxygen present in said material represents less than 30 atom %; and the selective destruction with a chemical agent of the Si—O bonds present in the film. Applications include microelectronics and microtechnology, in any manufacturing process that involves the degradation of a sacrificial material by diffusion of a chemical agent through a film that is permeable to this agent, for the production of air gaps, in particular the manufacture of air-gap interconnects for integrated circuits.

Abstract: A process for producing silicon rods including providing a reactor vessel containing at least one reaction chamber surrounded by a jacket, wherein a pre-heating fluid is circulated in the jacket; one or more electrode assemblies extending into the reaction chamber wherein each electrode assembly comprises a gas inlet, one or more heat transfer fluid inlets/outlets, at least one pair of silicon filaments, the filaments connected to each other at their upper ends with a silicon bridge to form a filament/slim rod assembly, each filament/slim rod assembly enclosed in an isolation jacket; a source of a silicon-bearing gas connected to the interior of the vessel for supplying the gas into the reaction chamber to produce a reaction and to deposit polycrystalline silicon on the filament by chemical vapor deposition thereby producing a rod of polycrystalline silicon; a heat transfer system that is connected to the jacketed reaction chamber that supplies heat transfer fluid to preheat the reaction chamber; and a power

Abstract: Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: A device for protecting electrode holders in CVD reactors includes an electrode suitable for accommodating a filament rod on an electrode holder which includes an electrically conductive material and is installed in a recess of a bottom plate, wherein an intermediate space between an electrode holder and a bottom plate is sealed by means of a sealing material, and the sealing material is protected by a protective body which is made up of one or more parts and is arranged in a ring-like manner around the electrodes, and the height of the protective body increases at least in sections in the direction of the electrode holder.

Abstract: A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.

Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

Abstract: A process for combining a polythiol reactant and an alkenyl silane reactant to form a polysulfide polysilane. The reactants are combined in a thiol-ene addition process driven by UV radiation. The polysulfide polysilane is then hydrolyzed and may be combined with other hydrolyzed compounds. For coatings, the polysulfide polysilane is hydrolyzed and may optionally be combined with nanoparticles. For bulk materials, the polysulfide polysilane is hydrolyzed, concentrated, and heated to form a high refractive index material which can be used to form optical articles such as lenses.

Abstract: This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods.

Abstract: Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Abstract: The subject of the invention is the use of a material composed of a substrate equipped with a coating based on titanium oxide surmounted by a thin hydrophilic layer forming at least one part of the outer surface of said material and that is not composed of titanium oxide, as a material that prevents the deposition of mineral soiling on said outer surface in the absence of water runoff.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.

Abstract: A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC?CH, C?CH2, C?C or a [S]n linkage, where n is a defined above.

Abstract: A composition having a polythiol reactant and an alkenyl silane reactant which are combined to form a polysulfide polysilane. In the process, the reactants are combined in a thiol-ene addition process driven by UV radiation. The polysulfide polysilane is then hydrolyzed and may be combined with other hydrolyzed compounds. For coatings, the polysulfide polysilane is hydrolyzed and may optionally be combined with nanoparticles. For bulk materials, the polysulfide polysilane is hydrolyzed, concentrated and heated to form a high refractive index material which can be used to form lenses.

Abstract: A method for producing patterns in a polymer layer. Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.

Abstract: A process for producing silicon rods including providing a reactor vessel containing at least one reaction chamber surrounded by a jacket, wherein a pre-heating fluid is circulated in the jacket; one or more electrode assemblies extending into the reaction chamber wherein each electrode assembly comprises a gas inlet, one or more heat transfer fluid inlets/outlets, at least one pair of silicon filaments, the filaments connected to each other at their upper ends with a silicon bridge to form a filament/slim rod assembly, each filament/slim rod assembly enclosed in an isolation jacket; a source of a silicon-bearing gas connected to the interior of the vessel for supplying the gas into the reaction chamber to produce a reaction and to deposit polycrystalline silicon on the filament by chemical vapor deposition thereby producing a rod of polycrystalline silicon; a heat transfer system that is connected to the jacketed reaction chamber that supplies heat transfer fluid to preheat the reaction chamber; and a power

Abstract: The present invention provides a process for producing a porous quartz glass base, which comprises hydrolyzing a silicon compound in an oxyhydrogen flame in a reaction furnace to generate and deposit fine silica particles on a starting member, thereby forming a porous quartz glass base, wherein a gas discharge pipe for discharging an unnecessary gas from the reaction furnace is heated. According to the present invention, fine silica particles can be prevented from adhering to a gas discharge pipe for discharging the unnecessary hydrogen chloride gas generated in producing a porous quartz glass base.

Abstract: Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.

Abstract: The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means (C) is constituted by forming one or a plurality of separation layer(s) on the surface of a metallic core element and is connected to an electrode means (E), heating the core means (C) by supplying electricity through the electrode means (E), and supplying a reaction gas (Gf) into the inner space (Ri) for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means (C).

Abstract: A CVD ozone (O3) deposition process, with the preferred embodiment comprising the steps of disposing a substrate in a chemical vapor deposition chamber and exposing the substrate surface to a SiO2 precursor gas, a carrier gas, and optionally a dopant gas in the presence of ozone and exposing the reaction volume of the 5 gases above the substrate surface to a high intensity light source, to increase the functional atomic oxygen concentration and reduce the fixed charge in the deposited films.

Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.

Abstract: Disclosed are a method and an apparatus for preparing a polycrystalline silicon rod using a mixed core means, comprising: installing a first core means made of a resistive material together with a second core means made of silicon material in an inner space of a deposition reactor; electrically heating the first core means and pre-heating the second core by the first core means which is electrically heated; electrically heating the preheated second core means; and supplying a reaction gas into the inner space in a state where the first core means and the second core means are electrically heated for silicon deposition.

Abstract: A coating method is provided for forming a liquid-repellent coat on a predetermined partial region of an inner surface of each through-hole of a nozzle plate. The nozzle plate is provided in an ink-jet head of an ink-jet printer. The coating method comprises the steps of: forming a coat preform on a region including the partial region of the inner surface; supplying a mask material having ultraviolet ray absorbability into the coated through-hole; irradiating ultraviolet rays onto the base material to partially decompose and remove the coat preform on the inner surface; and removing the mask material in the through-hole to obtain the nozzle plate partially coated with the liquid-repellent coat. The coat preform removal is conducted through the use of attenuation of the ultraviolet rays by means of the mask material or through the combined use of the ultraviolet ray attenuation and the presence/absence of the mask material.

Abstract: The object of the present invention is to provide an apparatus for manufacturing a gas barrier plastic container which simultaneously satisfies the condition that the same vacuum chamber can be used even when the container shapes are different, the condition that a high-frequency power source is unnecessary, and the condition that film formation can be carried out for a plurality of containers inside one vacuum chamber in order to make the apparatus low cost. In an apparatus for forming a film on the inner surface of a container, a thermal catalyst is supported on a source gas supply pipe, and the source gas supply pipe is inserted into the port of the container, followed by film formation. In an apparatus for forming a film on the outer surface of a container, a thermal catalyst is arranged on the periphery of the plastic, and a source gas is blown out through the source gas supply pipe while bringing the source gas into contact with the thermal catalyst for film formation.

Abstract: A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.

Abstract: A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

Abstract: Disclosed herein is a method of manufacturing multi-layered thin films having different physical properties on a base material using a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes changing a plasma frequency to be applied, while not changing a composition ratio of a mixed gas for plasma generation, to sequentially form thin films corresponding to a plasma composition of the plasma frequency.

Abstract: A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

Abstract: A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) ?/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) ?/second for the a-SiGe:H intrinsic layer.

Abstract: A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon crystal grains which are stably terminated and to effectively control the grain size in nanometer scale. A forming method and a forming apparatus of nanocrystalline silicon structure with oxide or nitride termination, carry out a first step of treating a surface of a substrate with hydrogen radical; a second step of depositing silicon crystals having a grain size of 10 nm or less by the thermal reaction of a silicon-containing gas; and a third step of terminating the surface of the silicon crystal with oxygen or nitrogen by using one of oxygen gas, oxygen radical and nitrogen radical.

Abstract: A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuated. A silicon hydride gas is introduced into the treatment environment, which may be heated prior to the introduction of the gas. The substrate and silicon hydride gas contained therein are heated, if the treatment environment was not already heated prior to the introduction of the gas and pressurized to decompose the gas. A layer of silicon is deposited on the substrate surface. The duration of the silicon depositing step is controlled to prevent the formation of silicon dust in the treatment environment. The substrate is then cooled and held at a cooled temperature to optimize surface conditions for subsequent depositions, and the treatment environment is purged with an inert gas to remove the silicon hydride gas.

Abstract: A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

Abstract: There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a microcrystalline silicon body. The deposition gas and the conversion gas are subjected to a pulsed electromagnetic radiation to effectuate deposition and conversion.

Abstract: A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impurities of 0.2 to 8 atom % and has a thickness of 10 to 200 nm.

Abstract: Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

Abstract: Hot-filament chemical vapor deposition has been used to deposit copolymer thin films consisting of fluorocarbon and siloxane groups. The presence of covalent bonds between the fluorocarbon and organosilicon moieties in the thin film has been confirmed by Infrared, X-ray Photoelectron (XPS) and solid-state 29Si, 19F, and 13C Nuclear Magnetic Resonance (NMR) spectroscopy. The film structure consists of chains with linear and cyclic siloxane groups and CF2 groups as repeat units.

Abstract: Oriented materials and methods for their formation are disclosed. The oriented material is formed by depositing an oriented component from an oriented liquid crystal medium. Oriented materials having multiple layers and methods for their formation are also disclosed.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.