Abstract: A process for coating the inner surface of a greatly arched, essentially dome-shaped substrate by CVD is described wherein reaction gases, which contain layer-former molecules, are conveyed into a reaction chamber containing the substrate(s) to be coated. The reaction gases are conveyed through at least one gas inlet, placed facing the vertex of the dome at a distance from the surface to be coated. Deposition of the layer material on the substrate is brought about by producing a reaction zone on the inner surface of the substrate to be coated. The reaction gases do not, as is usual for known processes, flow slowly into the reaction chamber. Instead, for production of a uniform coating, the reaction gases are introduced at a high speed such that the product of Reynolds number, R, of the gas jet in or in the immediate vicinity of the gas inlet and the distance, h, between the gas inlet and the dome vertex is 400<R.times.h[mm]<4000.

Abstract: A barrier coating against oxygen and water vapor penetration for a plastic packaging film comprising two oxides, one of which is SiO.sub.2 while the other is Al.sub.2 O.sub.3. The barrier is a single layer of mixed oxides in which the concentration of Al.sub.2 O.sub.3 increases continuously from 20% by weight to 80% by weight while the concentration of SiO.sub.2 decreases continuously from 80% by weight to 20% by weight as the thickness of the mixed oxide layer increases from the surface of the plastic film. The plastic film is preferably polyethylene terephthalate or polyphenylene oxide and the barrier coating is transparent.

Abstract: This invention relates to an improved process for the thermal dehydrogenation of polysilicon granules in a fluidized bed reactor, the improvement which comprises introducing a varying electromagnetic field into the reactor whereby reactor walls are coated with silicon during the dehydrogenation.

Abstract: A process for the formation of a silicon oxide film, comprising the steps of exciting a gas comprising an organosilane or organosiloxane gas and a gas containing H and OH above a substrate in a reaction chamber to react them with each other in a gaseous phase or on the substrate, thereby depositing a thin film of an organic-group-containing silanol, silanol polymer, or siloxane-bonded polymer on the substrate, and removing the organic groups from the thin film to form a silicon oxide film. Preferably, the formation of a film is conducted while repeating the step of deposition and the step of removing the organic groups through a plasma treatment within an identical chamber, and the film is further heat-treated at a temperature of 450.degree. C. or below. Thus, a good insulating film having a flatness comparable to that of an SOG film can be obtained.

Abstract: An amorphous thin film as a solid lubricant having a low coefficient of friction. It is composed of silicon (Si), oxygen (O), carbon (C), and hydrogen (H), and has a composition defined by the formula: Si.sub.x (O.sub.m, C.sub.n, H.sub.l-m-n).sub.1-x where, x=0.03-0.02, m=0.05-0.5, =0.1-0.9, and 0.6.ltoreq.m+n.ltoreq.0.95. This thin film exhibits extremely low friction stably from the beginning of sliding. It has superior wear resistance owing to its high hardness.

Abstract: Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be formed as films on solid-state substrates by reacting silane gas and at least one alloying gas (H.sub.2 M, wherein M is an element from Group VIa of the periodic table), preferably with hydrogen dilution, by a glow-discharge method such as plasma-enhanced chemical vapor deposition. The alloys can have an optical bandgap energy from about 1.0 eV to about 2.3 eV, as determined by selecting one or more different Group VIa elements for alloying or by changing the concentration(s) of the alloying element(s) in the alloy. The alloys exhibit excellent light-to-dark conductivity ratios, excellent structural quality, and resistance to Staebler-Wronski degradation. They can be used as "i" type or doped for use as "p" or "n" type materials.

Abstract: Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500.degree. C. Si.sub.2 H.sub.6 and PH.sub.3 are introduced into the reaction tube. PH.sub.3 is preheated to 400.degree. C. in a gas activating unit before being introduced into the reaction tube. By virtue of the preheating, the thermal decomposition of PH.sub.3 carried out in the reaction tube is accelerated.