Superconductor Patents (Class 427/62)
  • Patent number: 5112801
    Abstract: A method for mechanically aligning oriented superconducting or permanently magnetic materials for further processing into constructs. This pretreatment optimizes the final crystallographic orientation and, thus, properties in these constructs. Such materials as superconducting fibers, needles and platelets are utilized.
    Type: Grant
    Filed: January 24, 1990
    Date of Patent: May 12, 1992
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: William J. Nellis, M. Brian Maple
  • Patent number: 5110791
    Abstract: A method for producing an oxide superconductor comprises the steps of: forming on a substrate a layer of elements deficient in at least one of the elements composing a desired oxide superconductor and immersing the layer formed substrate into a solution containing a supplementary element which is at least one of the deficient oxide superconductor composing elements.
    Type: Grant
    Filed: September 18, 1990
    Date of Patent: May 5, 1992
    Assignee: Fujitsu Limited
    Inventor: Seigen Ri
  • Patent number: 5108983
    Abstract: A method for applying coatings to substrates using chemical vapor deposition with low vapor pressure reagents is disclosed which comprises the steps of: (a) placing a substrate in a furnace means; (b) directly introducing powder reagents by a powder feeder means into said furnace means; and (c) vaporizing and reacting said reagents within said furnace means resulting in the deposition from the vapor phase of a coating on said substrate, wherein said coating can be an oxide superconductor.
    Type: Grant
    Filed: November 21, 1989
    Date of Patent: April 28, 1992
    Assignee: Georgia Tech Research Corporation
    Inventors: Walter J. Lackey, Jr., E. Kent Barefield, William B. Carter, John A. Hanigofsky, David N. Hill
  • Patent number: 5108984
    Abstract: A thin film of an oxide superconductor having a homogeneous composition and less oxygen defects is produced by independently vaporizing at least one material selected from the group consisting of the elements of Ia, IIa and IIIa groups of the periodic table and their compounds and at least one material selected from the group consisting of the elements of Ib, IIb and IIIb groups of the periodic table and their compounds in the presence of molecular oxygen and depositing the vaporized materials together with oxygen on a substrate to form a thin film of the oxide superconductor.
    Type: Grant
    Filed: December 19, 1990
    Date of Patent: April 28, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Jun Shioya, Yoichi Yamaguchi, Akira Mizoguchi, Noriyuki Yoshida, Kenichi Takahashi, Kenji Miyazaki, Satoshi Takano, Noriki Hayashi
  • Patent number: 5107119
    Abstract: A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.
    Type: Grant
    Filed: April 10, 1991
    Date of Patent: April 21, 1992
    Assignee: Fujitsu Limited
    Inventors: Takafumi Kimura, Hiroshi Nakao, Hideki Yamawaki, Masaru Ihara, Keigo Nagasaka
  • Patent number: 5106828
    Abstract: Superconducting oxides in the A, B, Cu oxide ternary system, where A is yttrium or a rare earth and B is an alkaline earth, are formed as thin films on a substrate by a sol-gel technique.
    Type: Grant
    Filed: July 20, 1987
    Date of Patent: April 21, 1992
    Assignee: North American Philips Corporation
    Inventors: Rameshwar N. Bhargava, William N. Osborne, Walter K. Zwicker
  • Patent number: 5106827
    Abstract: A process is described for the formation of high temperature superconducting materials from perovskites by inductively coupled plasma assisted oxidation. An inductively coupled plasma reactor is used to oxidize oxygen deficient perovskites in less time and at lower temperatures than previously possible. High power densities are created within the plasma reactor. This is thought to contribute to the rapid and low temperature phase change during oxidation from tetragonal to orthorhombic crystal structure apparently required for superconductivity at temperatures greater than approximately 77.degree. K. The low temperature and rapid processing time permits the application of conventional lithographic semiconductor manufacturing techniques to be applied to the potentially high temperature superconducting perovskite materials.
    Type: Grant
    Filed: February 5, 1991
    Date of Patent: April 21, 1992
    Assignee: The Perkin Elmer Corporation
    Inventors: Michael Borden, Keith Daniell, Matthew Magida, Charles Zarowin
  • Patent number: 5102483
    Abstract: A method for production of a ceramic sheet includes the following steps: First, a pair of green sheets are prepared from ceramic material by the doctor-blade method. Each of the green sheets has first and second surfaces. The prepared sheets are placed one on the other and adhered to each other in such a manner that the first surfaces of the green sheets oppose each other. Alternatively, the second surfaces of the sheets may oppose each other. As a result, a united green sheet is obtained. A separating sheet is disposed on a side of the united green sheet. The united green sheet is rolled, with the separating sheet, around a core. The united green sheet, with the separating sheet, is sintered in a rolled configuration thereby producing a rolled ceramic sheet.
    Type: Grant
    Filed: February 21, 1990
    Date of Patent: April 7, 1992
    Assignee: JGC Corporation
    Inventors: Syoryu Sawada, Makoto Higuchi, Takayuki Hizawa
  • Patent number: 5102862
    Abstract: A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.
    Type: Grant
    Filed: August 15, 1990
    Date of Patent: April 7, 1992
    Assignee: The University of Tokyo
    Inventors: Yoichi Okabe, Atsuki Inoue, Hideomi Koinuma
  • Patent number: 5102860
    Abstract: A method of controllably introducing a parametric modifier into a perovskite ceramic defect oxide type superconducting material, said method including the substitution of labile atoms of a parametric modifier (such as fluorine) for atoms already present in the ceramic defect oxide material.
    Type: Grant
    Filed: July 27, 1987
    Date of Patent: April 7, 1992
    Assignee: Ovonic Synthetic Materials Company, Inc.
    Inventors: Stanford R. Ovshinsky, Rosa Young
  • Patent number: 5100863
    Abstract: An improved method of manufacturing superconducting ceramics in the form of a thin film are described. The thin film is first formed of a superimposed structure composed of three films which contain a rare earth metal, an alkaline metal and copper respectively. Then the superimposed thin film is fired to convert to superconducting film.
    Type: Grant
    Filed: March 23, 1988
    Date of Patent: March 31, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shumpei Yamazaki
  • Patent number: 5100865
    Abstract: The present invention relates to a sintered ceramic wire.Ceramic materials, such as A1N, Si.sub.3 N.sub.4 and Al.sub.2 O.sub.3, have various superior characteristics including heat-resistance, and sintered ceramic materials have been of interest as superconducting materials of high critical temperatures.However, various disadvantages are involved in the formation of the sintered ceramic materials as thin wires, and in the practical use thereof.The present invention elminates such disadvantages to provide a thin and long sintered ceramic wire having sufficient strength and toughness to avoid breakage.A sintered wire is made by placing powders of metal oxides, precursors of the desired sintered material, having oxidation potentials less than that of copper, in a tube of a high temperature oxidation-resistant metal. This product is worked to its final size and a sintering step is performed. The method is satisfactory for manufacture of ceramic superconductors.
    Type: Grant
    Filed: November 20, 1989
    Date of Patent: March 31, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Susumu Yamamoto, Nozomu Kawabe, Teruyuki Murai
  • Patent number: 5100870
    Abstract: Disclosed is a broadly applicable method for making an article that, exemplarily comprises a superconductive oxide body, including a thin layer on a substrate, or powder particles. In a preferred embodiment, the method comprises forming a precursor melt and contacting at least a part of the melt with oxygen such that the concentration of oxygen in the part of the melt increase to a critical concentration, resulting in formation of the desired oxide, substantially without drop in temperature. The precursor melt comprises at least one metallic element M, and at least the part of the melt is at a temperature T, with T.sub.m <T<T.sub.o, where T.sub.m is the freezing temperature of the melt and T.sub.o is the melting temperature of the superconductive oxide. In an exemplary embodiment the melt consists essentially of Yb, Ba, and Cu in 1:2:3 atomic ratio, T is about 900.degree. C. A layer of superconductive oxide on a Sr-TiO.sub.3 substrate is formed by dipping the hot (900.degree. C.
    Type: Grant
    Filed: December 20, 1990
    Date of Patent: March 31, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Ho S. Chen, George S. Indig, Lionel C. Kimerling
  • Patent number: 5100694
    Abstract: Disclosed is a method for fabricating an edge geometry superconducting tunnel junction device comprising two niobium nitride superconducting electrodes (14,28) and a magnesium oxide tunnel barrier (24) sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.
    Type: Grant
    Filed: January 18, 1991
    Date of Patent: March 31, 1992
    Assignee: The United States of America as represented by the Administrator National Aeronautics and Space Administration
    Inventors: Brian D. Hunt, Henry G. LeDuc
  • Patent number: 5100868
    Abstract: A two-step process for the preparation of a thallium-containing superconductive film is described.In the first step of this process, an aerosol mist containing reactants necessary to produce a calcium/barium/strontium/copper precursor material is provided. This mist is subjected to radio-frequency radiation while in the plasma region, and it thereafter is deposited onto an electrically grounded substrate.In the second step of the process, the coated substrate is contacted with thallium-containing vapor.
    Type: Grant
    Filed: January 11, 1991
    Date of Patent: March 31, 1992
    Assignees: Alfred University Inc., University of Colorado Foundation, Inc.
    Inventors: Robert L. Snyder, Allen M. Hermann, Xingwu Wang, Hongmin Duan, Jemmy Hao
  • Patent number: 5098884
    Abstract: A superconducting oxide ceramic pattern is described. The pattern is comprised of a high Tc superconducting region and a low Tc superconducting region which exhibits a resistivity at the liquid nitrogen temperature while the high Tc region is superconductive at that temperature. The low Tc region is doped with impurity such as Si and then subjected to thermal treatment to oxidizing the impurity.
    Type: Grant
    Filed: March 5, 1990
    Date of Patent: March 24, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shumpei Yamazaki
  • Patent number: 5096882
    Abstract: A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.
    Type: Grant
    Filed: April 7, 1988
    Date of Patent: March 17, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Takahiko Kato, Katsuzo Aihara, Jiro Kuniya, Yutaka Misawa, Yoshihide Wadayama, Masahiro Ogihara, Toshikazu Nishino, Ushio Kawabe, Haruhiro Hasegawa, Kazumasa Takagi, Tokuumi Fukazawa, Katsuki Miyauchi
  • Patent number: 5096878
    Abstract: A method for making superconductive ceramics laminates comprises forming a thick film of a composite oxide comprising bismuth, strontium, calcium, copper and oxygen on a flat plane of a substrate, and orienting and crystallizing the thus formed film by heat treatment to cause the c-axis of composite oxide crystals to be substantially perpendicular to said flat plane of said substrate. An intermediate layer formed of a noble metal, MgO, SrTiO.sub.3, yttria-stabilized zirconia or an oxide of a superconductive ceramics-constituting element may be interposed between the film and the substrate.
    Type: Grant
    Filed: January 28, 1991
    Date of Patent: March 17, 1992
    Assignees: Mitsui Kinzoku Kogyo Kabushiki Kaisha, National Research Institute for Metals, Science and Technology Agency
    Inventors: Kazutomo Hoshino, Shigeru Yamazaki, Hidefusa Takahara, Masao Fukutomi
  • Patent number: 5096881
    Abstract: The present invention provides a method for making Tl-Ca-Ba-Cu-O superconductive materials in a film shape. Pursuant to the method, after placing a Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.7 powder onto some suitable substrate, such as platinum or copper, the substrate and powder are rolled between two rollers until a desired thickness is achieved. The film can then be taken off the substrate. Thallium oxide is then evaporated on the precursor film to make superconductive films. The Tl.sub.2 O.sub.3 can be evaporated in a furnace or vacuum.
    Type: Grant
    Filed: March 15, 1990
    Date of Patent: March 17, 1992
    Assignee: The University of Arkansas
    Inventors: Qamar A. Shams, Allen M. Hermann, Zhengzhi Sheng
  • Patent number: 5094880
    Abstract: A superconducting film is formed by a physical vapor deposition. In order to form such a superconducting film as exhibits a sufficient superconductivity a small portion of a target is sublimed without decomposing molecules of the target and deposited on a surface of a substrate. In addition an undesirable component is not introduced from the target into the superconducting film.
    Type: Grant
    Filed: July 11, 1990
    Date of Patent: March 10, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Masashi Hongoh
  • Patent number: 5093310
    Abstract: A method of enhancing the upper critical field (H.sub.c2) in high temperature superconducting ceramic copper oxide perovskites by exposure to gamma radiation.
    Type: Grant
    Filed: January 30, 1991
    Date of Patent: March 3, 1992
    Assignee: GEC-Marconi Electronic Systems Corp.
    Inventor: Carol Z. Rosen
  • Patent number: 5091221
    Abstract: A method for preparing a superconductor sputtering target is disclosed in which sputtering targets for coating superconductor films can be prepared essentially by mixing oxides (carbonates or fluorides) of metals such as Y, Ba, Cu (Bi, Pb), Sr, Ca,Cu) with the atomic ratio of individual elements be controlled in a specific range, an oxide superconductor paste being prepared by blending an organic binder and an organic solvent according to a specific solid percentage, and a metal such as aluminum being used as the substrate; by scraping with a squeegee and adjusting the distance between a stencil and the substrate such that the superconductor paste seeps through a mesh to be printed on the substrate and then dried; after scraping, screen-printing and drying having been repeated several times, the substrate being placed into an oven and heated to a temperature of 400.degree.-450.degree. C., at a rate of less than 5.degree. C.
    Type: Grant
    Filed: August 22, 1990
    Date of Patent: February 25, 1992
    Assignee: Industrial Technology Research Institute
    Inventors: Jau-Jier Chu, Ming-Chih Lai, Mei-Rurng Tseng, Huei-Hsing Yeh
  • Patent number: 5091362
    Abstract: A process for silver coating superconducting ceramic powder by(1) mixing AgNO.sub.3 with the superconducting ceramic powder particles;(2) melting the AgNO.sub.3 so that it wets and forms a uniform coating over he surfaces of the particles; and(3) decomposing the AgNO.sub.3 to form a thin, uniform coating of silver metal on the surfaces of the particles.The product is a loose powder of superconducting ceramic particles which are uniformly coated with silver metal. The powder can be cold worked (e.g., swaged, forged, etc.) to form superconducting structures such as rods or wires.
    Type: Grant
    Filed: October 10, 1990
    Date of Patent: February 25, 1992
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: William A. Ferrando
  • Patent number: 5089465
    Abstract: A process for producing a superconducting thick film including steps comprising subjecting a powder mixture of oxides or carbonates of Ba, Y and Cu each having an average particle size of less than 5 .mu.m to preliminary sintering, pulverizing the preliminary sintered mass into a powder having an average particle size of less than 10 .mu.m, and then admixing the pulverized powder with an organic vehicle to prepare a paste which is applied on a substrate and is sintered finally. The preliminary sintering is carried out at a temperature ranging from 700.degree. to 950.degree. C., while the final sintering is carried out at a temperature ranging from 800.degree. C. to 1,000.degree. C.
    Type: Grant
    Filed: June 14, 1990
    Date of Patent: February 18, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenichiro Sibata, Nobuyuki Sasaki, Shuji Yazu, Tetsuji Jodai
  • Patent number: 5089468
    Abstract: The present process for producing a Bi-based superconducting oxide includes the steps of molding a material powder and subjecting the molded article to partial melting and then to crystallization in the presence of oxygen. In that case, the molded article is annealed, after the partial melting, to the crystallization temperature and subjected to crystallization at that temperature. Also, the article after the crystallization is cooled and the cooled article is heat-treated in an inert gas atmosphere. According to the above process, there can be obtained a Bi-based superconducting oxide having excellent superconducting properties.
    Type: Grant
    Filed: March 28, 1990
    Date of Patent: February 18, 1992
    Assignee: NGK Insulators, Ltd.
    Inventors: Hitoshi Yoshida, Hitoshi Sakai, Shuichiro Oki, Keiichiro Watanabe, Manabu Yoshida, Toshio Oda
  • Patent number: 5089467
    Abstract: Superconductive structures and a method of forming the same wherein an assembled mass (12) of superconductive particles, or of a mixture of superconductive particles and particles having other properties, are formed into a desired confined configuration and consolidated into a rigid useful unitized body through shock-wave treatment performed at relatively lower temperatures.
    Type: Grant
    Filed: May 15, 1989
    Date of Patent: February 18, 1992
    Assignees: Oregon Graduate Center, Northwest Technical Industries, Inc.
    Inventors: Lawrence E. Murr, Alan W. Hare
  • Patent number: 5087607
    Abstract: A process of forming on a substrate a coating of a precursor of a crystalline rare earth alkaline earth copper oxide or heavy pnictide mixed alkaline earth copper oxide electrical conductor and converting the precursor to the crystalline electrical conductor.
    Type: Grant
    Filed: July 20, 1990
    Date of Patent: February 11, 1992
    Assignee: Eastman Kodak Company
    Inventors: Laurie A. Strom, Edward Carnall, Jr., Steven A. Ferranti, Jose M. Mir
  • Patent number: 5087609
    Abstract: A process for forming an alkoxide-derived yttrium-barium-copper oxide high temperature superconductor thin film by sol-gel processing is disclosed. It comprises first forming a thin film comprising solubilized yttrium and barium alkoxides and copper aminoalkoxide, under an inert gas atmosphere, on a non-reactive substrate, the amount of copper amino alkoxide being in excess of the stoichiometric amount to compensate for losses due to volatility of the copper amino alkoxide. The coating composition is then heated first in a moisture laden inert gas atmosphere, to hydrolyze the alkoxides, to temperatures in excess of the formation temperature of the superconductor. It is thereafter calcined in an oxygen atmosphere at higher temperatures to form the high temperature superconductor thin film.
    Type: Grant
    Filed: September 24, 1990
    Date of Patent: February 11, 1992
    Assignee: Akzo NV
    Inventors: George E. Whitwell, Meiylin F. Antezzo
  • Patent number: 5087608
    Abstract: A method for the passivation of superconductive rare earth cuprates involves depositing thereon a thin film of an amorphous or diamond-like carbon film of a thickness ranging from 100 .ANG. to 10 microns. The cuprate film may be in the as-deposited form, so necessitating a subsequent annealing step to convert the film to a superconducting phase and to remove the carbon.
    Type: Grant
    Filed: December 28, 1989
    Date of Patent: February 11, 1992
    Assignee: Bell Communications Research, Inc.
    Inventors: Siu W. Chan, Leonilda A. Farrow
  • Patent number: 5084955
    Abstract: A method for manufacturing a superconducting magnet comprising the steps of applying a bonding agent on a length of a superconductor by passing the superconductor through a bath of the bonding agent to thereby coat the superconductor with the bonding agent. The superconductor coated with the bonding agent is simultaneously wound to form a winding which is then hardened by heating for example to form a rigid winding without voids.
    Type: Grant
    Filed: October 13, 1987
    Date of Patent: February 4, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akinori Yamasaki, Akihiro Harada, Teruo Miyamoto
  • Patent number: 5082688
    Abstract: A process is disclosed of promoting the growth of crystalline bismuth mixed alkaline earth copper oxide grains in forming a conductive film by incorporating silver in the bismuth mixed alkaline earth copper oxide prior to sintering.
    Type: Grant
    Filed: May 4, 1989
    Date of Patent: January 21, 1992
    Assignee: Eastman Kodak Company
    Inventors: John A. Agostinelli, Liang-sun Hung, Jose M. Mir
  • Patent number: 5082687
    Abstract: A process for producing an organic electrical conductor comprising the steps of: (1) dissolving or dispersing an electron-donating material and an electron-accepting material in a solvent containing an alcohol; and (2) forming and growing crystals of the organic electrical conductor by subjecting the dissolved or dispersed materials of step (1) to electrochemical oxidation-reduction.
    Type: Grant
    Filed: January 8, 1990
    Date of Patent: January 21, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshinobu Ueba, Takayuki Mishima, Gunzi Saito
  • Patent number: 5079216
    Abstract: A composite high temperature superconductor and substrate structure formed by a process which employs masking a substrate slab into regions to have superconductor devices therein, depositing superconductor ceramic compound materials within said regions, masking the substrate slab upper surface outside of the regions with reflective material, and heating the superconductor material to a temperature desired for firing or sintering the material. The semiconductor slab outside of the superconducting region is maintained at a relatively low temperature by reflection of the incident energy by the reflective material. After heating of the superconducting material to its ceramic form, the reflective material is removed and the remainder of the semiconductive circuit is processed in a conventional manner.
    Type: Grant
    Filed: June 1, 1990
    Date of Patent: January 7, 1992
    Inventor: David L. Henty
  • Patent number: 5079226
    Abstract: A jointed structure comprising at least two kinds of oxide superconductor having different melting points, higher melting point superconductor and one lower melting point oxide superconductor being alternately jointed. In this jointed structure, the lower melting oxide superconductor is used as a joint layer for the higher melting oxide superconductors. The jointed structure can be obtained by combining an Y--Ba--Cu--O oxide superconducting material and a Bi--Sr--Ca--Cu--O oxide superconducting material, or by combining two Bi--Sr--Ca--Cu--O oxide superconducting materials of different compositions and accordingly of different melting points. Large cylindrical structures used as, for example, a container for apparatus for biomagnetism measurement can be produced by jointing two or more divided cylindrical parts. In this case, the techique of the jointed structure of the present invention can be applied for jointing of the divided cylindrical parts.
    Type: Grant
    Filed: March 28, 1990
    Date of Patent: January 7, 1992
    Assignee: NGK Insulators, Ltd.
    Inventors: Hitoshi Sakai, Hitoshi Yoshida
  • Patent number: 5077267
    Abstract: A process for forming a composite high temperature superconductor copper wire, said process comprising the steps of (1) directing a submicron sized powder of a superconducting ceramic material through a length of copper tubing to coat the interior surface of said tubing with a uniform compact film of said powder, and (2) sintering said powder while passing oxygen through said tube and while maintaining the outside of said tube in an inert atmosphere. In a preferred embodiment an aerosol process is used to generate the submicron sized powder of the superconductor.
    Type: Grant
    Filed: July 12, 1988
    Date of Patent: December 31, 1991
    Assignee: International Business Machines Corporation
    Inventors: Edward M. Engler, Toivo T. Kodas, Victor Y. Lee
  • Patent number: 5077266
    Abstract: A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.
    Type: Grant
    Filed: September 11, 1989
    Date of Patent: December 31, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Kazumasa Takagi, Tokuumi Fukazawa, Yoshimi Kawanami, Yuuichi Madokoro, Katsuki Miyauchi, Toshiyuki Aida, Yukio Honda, Masaaki Futamoto, Masahiko Hiratani
  • Patent number: 5075282
    Abstract: A method of manufacturing a conducting or superconducting film comprises the steps of providing a powdered composition of complex oxide conducting or superconducting materials represented by the general formula: (La.sub.l-x M.sub.x).sub.y CuO.sub.4-.delta., where M is a member selected from the group of alkali earth metals and mixtures of the alkali earth metals: x=0 to 1. y=1.5 to 2.5, adding an organic solvent to the powdered composition to form a kneaded paste, printing the paste on a substrate before drying and firing.
    Type: Grant
    Filed: October 16, 1989
    Date of Patent: December 24, 1991
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Hideomi Koinuma
    Inventors: Hideomi Koinuma, Takuya Hashimoto, Fueki Kazuo
  • Patent number: 5071828
    Abstract: Process for the production of a polycrystalline, crystal-oriented layer of a high temperature superconductor of the class (Y,RE) Ba.sub.2 Cu.sub.3 O.sub..apprxeq.7 on a substrate or between two substrates of Ag or an Ag alloy containing up to 20% by weight Au, Pd or Pt, wherein a first powder layer, of at most 5 .mu.m thickness and consisting of the simple oxides and/or mixed oxides of the elements Y, Ba, Cu in the ratio Y:Ba:Cu:O=1:2:3:6.5, is first applied, and on it is applied a second powder layer of the superconducting substance (Y,RE) Ba.sub.2 Cu.sub.3 O.sub..apprxeq.7 in a thickness of 5-10 .mu.m, and the whole is sintered in an O.sub.2 -containing atmosphere.
    Type: Grant
    Filed: March 8, 1990
    Date of Patent: December 10, 1991
    Assignee: Asea Brown Boveri Ltd.
    Inventors: Felix Greuter, Claus Schuler
  • Patent number: 5071830
    Abstract: An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.
    Type: Grant
    Filed: August 31, 1988
    Date of Patent: December 10, 1991
    Assignee: Superconductor Technologies, Inc.
    Inventors: William L. Olson, Michael M. Eddy, Robert B. Hammond, Timothy W. James, McDonald Robinson
  • Patent number: 5070071
    Abstract: A method is provided for making a flexible superconductive composite wire by drawing a wire of noble metal through a melt formed from solid superconducting material. The preferred superconducting material comprises the Bi-Sr-Ca-Cu-O class of materials.
    Type: Grant
    Filed: October 11, 1988
    Date of Patent: December 3, 1991
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Theodore H. Geballe, Robert S. Feigelson, Dan Gazit
  • Patent number: 5064809
    Abstract: A Josephson junction consisting of high temperature ceramic superconductors layers, separated by an ultra-thin insulating barrier made of an non-oxide substance like diamond-like carbon. An integral part of this disclosure is the technique involving the use of an activated oxygen species for providing an oxygen chemical potential which is higher than that obtainable at barometric pressure.
    Type: Grant
    Filed: December 23, 1988
    Date of Patent: November 12, 1991
    Assignee: Troy Investments, Inc.
    Inventor: Aharon Z. Hed
  • Patent number: 5063199
    Abstract: This invention provides a method for depositiing a superconducting thin film comprising at least one high temperature Bi-Sr-Ca-Cu-O-based superconductor phase onto a substrate such as, for example, a ceramic oxide or a metal. High temperature Bi-Sr-Ca-Cu-O-based superconductor phases include Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, Bi.sub.4 Sr.sub.3 Ca.sub.3 Cu.sub.4 O.sub.16, and Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10.
    Type: Grant
    Filed: June 15, 1990
    Date of Patent: November 5, 1991
    Assignee: Minnesota Mining and Manufacturing Company
    Inventor: Kenton D. Budd
  • Patent number: 5059581
    Abstract: The surface of high temperature superconductors such as YBa.sub.2 Cu.sub.3 O.sub.7-x are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10.sup.-3 M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.
    Type: Grant
    Filed: June 28, 1990
    Date of Patent: October 22, 1991
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Richard P. Vasquez
  • Patent number: 5057201
    Abstract: This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.
    Type: Grant
    Filed: January 10, 1990
    Date of Patent: October 15, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuhiko Fujita, Naoji Fujimori, Hideo Itozaki, Saburo Tanaka, Keizo Harada, Tetsuji Jodai
  • Patent number: 5057485
    Abstract: In a device wherein a region which includes a superconducting weak link or a Josephson junction is irradiated with light or an electromagnetic wave so as to detect the light or an electromagnetic wave on the basis of the change of a superconducting critical current or an output voltage; a light-sensitive superconducting device characterized in that the surface of a superconductor lies in contact with a photoconductive semiconductor in at least a part of the whole of the region which is irradiated with the light or the electromagnetic wave.
    Type: Grant
    Filed: May 11, 1988
    Date of Patent: October 15, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Toshikazu Nishino, Ushio Kawabe, Mutsuko Hatano
  • Patent number: 5053383
    Abstract: The critical current density J.sub.c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T.sub.c (R.dbd.0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e.g., 1 MeV) ions. The ability to tailor J.sub.c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.
    Type: Grant
    Filed: March 29, 1988
    Date of Patent: October 1, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Kenneth T. Short, Alice E. White
  • Patent number: 5051396
    Abstract: A manufacturing method of Josephson devices is described. A superconducting ceramic film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by which two superconducting regions is separated. The spoiling is performed by adding a spoiling element into the ceramic film by ion implantation.
    Type: Grant
    Filed: May 21, 1990
    Date of Patent: September 24, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5051398
    Abstract: In a process for depositing a superconducting thin film of bismuth-containing compound oxide on a substrate by physical vapor deposition, the improvement wherein the substrate is heated at a temperature between 670.degree. and 750.degree. C. during the deposition.
    Type: Grant
    Filed: August 28, 1989
    Date of Patent: September 24, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenjiro Higaki, Keizo Harada, Naoji Fujimori, Hideo Itozaki, Shuji Yazu
  • Patent number: 5049818
    Abstract: A superconducting gradiometer for measuring weak magnetic fields for a measuring device comprising a SQUID (Superconductive Quantum Interference Devices), a gradiometer coil, a coupling coil, a cryosystem and a signal processing device, in which the well-defined gradient of a magnetic field to be measured is detected by means of the gradiometer. A coil of the gradiometer is made of superconducting wire, arranged about a carrier body in axial and circumferential grooves cut in the carrier body, the grooves being coated with a superconducting thin film. The thin film in the circumferential grooves is interrupted by slots. The wire in the respective circumferential grooves comprises loops wound in opposing directions connected by a twisted pair of connecting leads secured in the axial groove.
    Type: Grant
    Filed: March 5, 1990
    Date of Patent: September 17, 1991
    Assignee: U.S. Philips Corporation
    Inventors: Olaf Dossel, Wilfried Edeler
  • Patent number: 5047385
    Abstract: A method of forming a superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin film with selected crystal orientation is described which comprises the steps of sputtering simultaneously Y, Ba and Cu onto the surface of a substrate, introducing oxygen at said surface during deposition, controlling the stoichiometry of the elements Y, Ba or both richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa.sub.2 Cu.sub.3 O.sub.7-x.
    Type: Grant
    Filed: July 20, 1988
    Date of Patent: September 10, 1991
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Malcolm R. Beasley, Kookrin Char, Theodore H. Geballe, Robert H. Hammond, Aharon Kapitulnik, Andy Kent, Michio Naito, Byungdu Oh