Abstract: A method for generating repeatable and reproducible crystallographic grain-boundary junctions is provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate is etched by an anisotropic etchant to provide a "V"-groove in one face, and an epitaxial superconducting film is grown on the faces of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points of intersection of the faces with each other, or with the faces and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices.

Abstract: Improvement in heat-treatment of a superconducting thin film of thallium type compound oxide deposited on a substrate by PVD or CVD. In the invention, the heat-treatment is effected at a temperature between 880.degree. C. and 920.degree. C. for a predetermined time duration under such a condition that the partial pressure of thallium oxide becomes higher than the saturated vapour pressure of thallium oxide at said temperature.

Abstract: The present invention provides a method of depositing a passivation layer on the surface of a superconducting ceramic oxide wherein the passivation layer is a layer of an oxide of Al, Bi, Si or Al-W.

Abstract: A high temperature superconducting ceramic copper oxide perovskite with enhanced upper critical field (H.sub.c2) and increased current carrying capacity caused by exposure to gamma radiation.

Abstract: A method for manufacturing a superconductive multilayer circuit has a first thin film forming step for forming a thin film, which is composed of superconductive material or a similar material thereto, on a substrate, a first circuit layer forming step for forming a superconductive circuit by discharging a specific component from a predetermined part of the thin film or implanting the component in the thin film, a second thin film forming step for forming a thin film, which is composed of a superconducting material or the simulant thereto, on the first circuit layer, and a second circuit layer forming step for forming a superconductive circuit by removing a specific component from a predetermined part of the thin film or implanting the component in the thin film.

Abstract: The present invention relates to a ceramics sintered wire.Ceramics materials, such as AlN, Si.sub.3 N.sub.4 and Al.sub.2 O.sub.3, have various kinds of superior characteristic including the heat-resistance and sintered ceramics materials have been watched with interest as superconducting materials having high critical temperatures.However, various kinds of disadvantage have been pointed out for the formation of the sintered ceramics materials in the form of thin wire and the practical use thereof.The present invention eliminates such disadvantages to provide a thin and long ceramics sintered wire having a sufficient strength and toughness to an extent of avoiding the breakage.

Abstract: A method of preparing a superconducting oxide by combining the metallic elements of the oxide to form an alloy, followed by oxidation of the alloy to form the oxide. Superconducting oxide-metal composites are prepared in which a noble metal phase intimately mixed with the oxide phase results in improved mechanical properties. The superconducting oxides and oxide-metal composites are provided in a variety of useful forms.

Abstract: A process for producing a freestanding high Tc superconducting thin film is disclosed, which comprises providing a carbon substrate, depositing a high Tc superconducting thin film on the substrate and removing the carbon substrate by converting the carbon substrate to a gaseous composition at a temperature insufficient to cause thermal damage to said superconducting thin film but greater then 500.degree. C. in an oxygen containing atmosphere.

Abstract: A method of making a ribbon-like or sheet-like superconducting composite body is disclosed. The method is well suited for making long lengths (e.g.,>100m) of ribboon or large areas (e.g.,>100cm.sup.2) of sheet-like composite. The method comprises forming a Bi-Sr-Ca-Cu-oxide-containing layer on a metal (exemplarily Ag) substrate, and mechanically deforming (typically by rolling) the thus formed composite such that the oxide is densified to more than 80% of the theoretical density. Subsequently the oxide layer is at least partially melted and allowed to re-solidify such that a large portion of the oxide crystals has c-axis alignment. After appropriate heat treatment in an O.sub.2 -containing atmosphere, thus produced superconductor ribbons or sheets can have high J.sub.c).gtoreq.10.sup.4, frequently >10.sup.5 A/cm.sup.2) for temperatures less than about 20K and in magnetic fields less than about 5T.

Abstract: A method of forming a superconducting Tl-Ba-Ca-Cu-O film is disclosed, which comprises depositing a Ba-Ca-Cu-O film on a substrate by MOCVD, annealing the deposited film and heat-treating the annealed film in a closed circular vessel with TlBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x and cooling to form said superconducting film of TlO.sub.m Ba.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+2, wherein m=1,2 and n=1,2,3.

Abstract: A superconductor oxide composite is prepared using a press coating technique. The coated layers on various substrates exhibit good adhesion, textured microstructure, and improved J.sub.c.

Abstract: A high-T.sub.c superconductor contact unit having low interface resistivity is disclosed, as is a method for making the unit. An inert metal is deposited on the surface of the superconductor, which surface is preferably non-degraded, to form a unit with the surface of the superconductor, and where temperatures as high as 500.degree. C. to 700.degree. C. can be tolerated, the unit is oxygen annealed to establish a still lower surface resistivity between the surface of the high-T.sub.c superconductor and the inert metal, including a low surface resistivity of about 10.sup.-10 .OMEGA.-cm.sup.2 at high-T.sub.c superconductor operating temperatures. The superconductor is a metal-oxide superconductor, and may be rare earth, thallium, or bismuth based.

Abstract: A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.

Abstract: The process for forming an ultrafine-particle film according to this invention is characterized by irradiating the surface of a target of a raw material with laser energy in a predetermined atmosphere under conditions where a plume is generated, exposing a substrate (a base material) directly to the plume generated, and thereby forming a film. The substrate is positioned in the plume at a distance, from the surface of the target of the raw material, of at least the mean free path of atoms and/or molecules of the raw material (or components thereof). By so positioning the substrate, ultrafine particles of the raw material are deposited on the substrate. The plume containing a large amount of ultrafine particles moves at a high speed; and exposure of the substrate, at the specified position relative to the target, to the plume causes strong adhesion of ultrafine particles contained in the plume to the substrate, resulting in formation of a film.

Abstract: A substrate to be deposited with a superconducting oxide thin film thereon is set a reaction furnace. An organic metal source gas and oxygen-containing gas are alternately introduced into the reactor to pyrolyze, thereby depositing the superconducting oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas.

Abstract: A supported superconductor is made where a top layer of alkaline earth metal-copper oxide based material (10) is applied to a buffer layer (14) of La.sub.2-x Sr.sub.x CuO.sub.4, where x is a value from 0 to 0.4, all of which is supported by a bottom layer (12) of .alpha.-Al.sub.2 O.sub.3.

Abstract: A method for forming a superconducting oxide material including introducing oxygen or an oxidizing gas and a reactive gas or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber; supplying microwaves to the plasma generating chamber where the direction of the magnetic field and the propagation direction of the microwave are parallel such that the oxygen or the oxidizing gas and the reactive gas or reactive minute particles are converting into plasma; and the formation of a superconducting oxide material on a film forming surface positioned in the plasma generating chamber during application of the magnetic field.

Abstract: A laser beam 5 is directed to a target made of an oxide superconductor to allow a target spot which is irradiated with the beam to be evaporated and a matter which is evaporated to be deposited as a thin film on the surface of a substrate 3 at which time excited oxygen is supplied to or near a thin film deposition site on the substrate 3. In this way, an oxide superconductor thin film is formed on the substrate with oxygen atoms incorporated in the crystal structure of the thin film.

Abstract: Grain boundary, weak-link junctions are formed at a predermined location of a uniform, planar substrate by depositing superconducting film on two sections of the substrate. The film is grown as a bicrystal having two distinct areas of superconducting film whose crystal lattices are rotated with respect to each other, either in-plane or out-of-plane, by more than 5.degree. and less than 90.degree.. The grain boundary acts as a weak link junction. The film can be induced to grow as a bicrystal by depositing intermediate strata such as seed layers or buffer layers or by modifying the growth conditions during deposition.

Abstract: A method for producing a superconducting article. An alloy consisting of metal elements, such as Y, Ba and Cu which are constituent elements of a superconducting compound oxide to be produced is oxidized so that a surface of the alloy is converted to the superconducting compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta..

Abstract: A process for coating a superconductive film onto a substrate is provided. In the first step of this process, a solution of the reagents required to produce the superconductive material is subjected to ultrasonic sound waves to create an aerosol. Thereafter, the aerosol is contacted with plasma while being subjected to substantially atmospheric pressure and a radio frequency alternating current in excess of 100 kilohertz; a vapor is produced in this step. The vapor so produced is passed through an orifice and allowed to deposit onto a substrate, which is in contact with a substrate holder which is electrically grounded.

Abstract: A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10.degree. to 100.degree. C. than the temperature which is used in the first step.

Abstract: A high-T.sub.c superconducting unit is disclosed having low contact resistivity between a substantially non-degraded surface of the superconductor and a surface of a contact pad in engagement with the substantially non-degraded surface of the superconductor, with contact resistivity of less than 1000 .mu..OMEGA.-cm.sup.2 at high-T.sub.c superconductor operating temperatures being disclosed.

Abstract: A method for manufacturing a pipe from a superconducting ceramic material is disclosed, which comprises providing a hollow supporting metallic body having a hollow inside section therein, introducing into the hollow inside section of the hollow supporting body a liquid into which is mixed a superconducting ceramic powder material comprising an oxidized copper material, drying the above liquid, so that the superconducting ceramic material is coated on the inside of the supporting body with a hollow space kept therein; and firing the supporting body and the ceramic material in an oxidizing atmosphere.

Abstract: The present invention provides a process for producing a superconducting material capable of elevating the Tc of oxide superconductors, in particular Bi-based superconductors. The feature of the present invention resides in a process for producing an oxide superconductor, in which a intermediate product or a product showing superconducting property is treated with a solution containing a compound having a reducing or oxidizing function. As the compound having a reducing function, compounds having two or more enolic hydroxy groups, cycloaliphatic polyhydric alcohol compounds or inorganic type reducing compounds are preferred. As the compound having oxidizing function, there can be mentioned, for example, carbonyl compounds, ozone, hydrogen peroxide, organic peroxide, dimethylsulfoxide and permanganate.

Abstract: A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.

Abstract: A method of growing KTa.sub.x Nb.sub.1-x O.sub.3 by pulsed laser evaporation. In order to compensate for the volatile K, two targets are prepared, one of sintered oxide powder having K, Ta, and Nb in amounts stoichiometric to KTa.sub.x Nb.sub.1-x O.sub.3 and the other of melt-grown KNO.sub.3. The method can also be used to form other complex materials having volatile components using a variety of sputtering growth techniques. The two targets are mounted on a rotating target holder and are alternately ablated by the laser beam. The KNO.sub.3 provides excess K, thus allowing the growth of a stoichiometric film. The method can be applied to many complex materials for which some of the components are volatile.

Abstract: A process for fabricating worked superconducting ceramic material of a mean grain size not more than 10 um is disclosed, which comprises the steps of: (a) preparing a metal casing containing a starting powder material having a composition for forming an oxide superconductor; (b) calcining the starting powder material contained in the casing at a temperature range of 850.degree. to 950.degree. C.; (c) subjecting said casing to a HIP treatment; (d) subjecting said casing containing hot deformed material to cold deformation processing; and (e) subjecting said casing to stress relief treatment by annealing in the presence of oxygen.

Abstract: A method is disclosed for forming a patterned oxide superconducting film wherein a selected region of a ternary metal oxide superconducting film is irradiated in a controlled atmosphere with photons so as to become non-superconductive.

Abstract: A method of forming an oxide superconductor thin film comprising the steps of:(a) mixing and uniformly dissolving starting materials in a solvent to provide a uniform viscous solution having a stoichiometric composition of said oxide superconductor;(b) coating the viscous solution onto a substrate; and(c) rapidly heating the coated thin film in an ozone-containing oxygen gas stream.

Abstract: A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

Abstract: A method is disclosed for the volatilization and transport of an alkaline earth metal precursor. The presence of an amine or ammonia significantly increases transport of the voltalized alkaline earth metal precursor as compared to transport under the same conditions but without the amine or ammonia.

Abstract: At least one layer from an oxide-ceramic superconductor material with a high transition temperature is produced on a substrate using a CVD-process. As parent materials, at least one vaporizable composition of each of the metallic components of the superconductor material is provided respectively, and these parent compositions are vaporized respectively at a predetermined temperature and with a predetermined partial pressure. In addition, at least one gaseous coreactant is provided, which is reactive with the parent compositions, the parent compositions as well as a minimum of one coreactant are dosed respectively by means of a carrier gas stream and united in a gas mixture with a predetermined mixture ratio, and to form the superconductor material, the conditions of reaction are adjusted using the energy supply for a reaction of or with the parent compositions and a minimum of one coreactant. A gaseous coreactant containing at least ammonia or organic amines is fed to the gas mixture.

Abstract: A method of preparing a high Tc superconducting fiber is disclosed, which comprises drawing into fiber form a core filament of a crystalline oxide, continuously depositing on the heated core filament a high Tc superconducting thin film and then depositing a protective layer on the outer surface of the high Tc superconducting thin film.

Abstract: A method for heat processing a superconductor wire which has a protective silver cladding includes the steps of attaching the coated wire to a spool and then rotating the spool to wind the wire around the spool in juxtaposed coils. As the wire is being wound around the spool, the portions of the wire which are not yet coiled are drawn through a container which holds a paint that contains a silver diffusion inhibiting material. The diffusion inhibiting material is consequently deposited onto the silver cladding of the superconductor wire, and the coiled wire is subsequently placed in a furnace. The wire is heat processed in the furnace as appropriate for the particular type of superconductor material. The diffusion inhibitor material prevents diffusion of silver during the heat processing between portions of the wire which contact each other.

Abstract: A method for manufacturing a superconducting device comprises the steps of forming a blocking film by means of an optical vapor deposit reaction on the surface of an oxide superconducting material; and then adding oxygen into the oxide superconducting material by the implementation of a heat treatment.

Abstract: In a method of patterning superconducting thin films such as YBaCuO, based on the inhibition of superconductivity by intermixing an impurity, such as silicon, with superconductor material, a thin film of silicon is formed on a magnesium oxide substrate and then patterned, by laser direct-writing for example, to correspond to a desired pattern of superconducting lines. Multilayered YBaCuO thin films are then deposited over the patterned silicon film and annealed using rapid thermal annealing at a temperature of 980.degree. C. maintained for a period in the range from 30 to 90 seconds. The rapid annealing results in intermixing of silicon and YBaCuO in regions of the film between the lines of the pattern which, in turn, causes these regions to become insulating, and at the same time causes the YBaCuO film over the line pattern to become superconducting.

Abstract: A method of forming a superconductive metal oxide film on a substrate is disclosed. The method comprises depositing a metal layer on the substrate and heat treating the metal layer in an oxygen-containing atmosphere such that the oxide film is formed therefrom. The metal layer is deposited such that it is substantially free of reactive constituents, e.g., oxygen and/or fluorine, and such that it contains all the metal constitutents that are to be contained in the oxide film. Advantageously, the metal layer is deposited such that the various metal constituents (e.g., Y, Ba, and Cu) are substantially mixed. The inventive method simplifies deposition control since the densities of the metal deposits are well known and constant, and permits relatively rapid deposition (e.g., by DC sputtering) since the targets are not subject to oxidation.

Abstract: When an oxide superconducting thin film is formed on a substrate by a vapor phase method such as laser ablation, for example, a plurality of grooves are formed on the substrate by photolithography or beam application in the same direction with an average groove-to-groove pitch of not more than 10 .mu.m, so that the oxide superconducting thin film is formed on a surface provided with such a plurality of grooves. Thus promoted is growth of crystals of the oxide superconducting thin film in parallel with the grooves, whereby respective directions of a-axes and c-axes are regulated to some extent. This improves critical current density of the oxide superconducting thin film.

Abstract: An apparatus for producing a tape superconductor of a compound superconductor type wherein the apparatus includes a first wire constructed of the superconducting compound material which is melted to form a bead. The bead is then wiped on a tape substrate to form a layer as the substrate is fed by the bead. Finally, the layer is cooled and a tape superconductor is formed.

Abstract: A thin film, fluorinated, ceramic defect-oxide type superconducting material grown on a substrate such as sapphire or stainless steel. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite-type lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducing material on the substrate, which is heated during the deposition process. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities.

Abstract: There is disclosed the structure of a superconductive wiring fabricated on an insulating substrate comprising a conductive pattern having at least one wiring strip of a superconductive ceramic formed on the insulating substrate and a protective film covering the wiring pattern and formed of a basic oxide, the basic oxide hardly reacts with the superconductive ceramic because of the fact that most of the superconductive ceramics are bases, then the wiring strip is allowed to stay in the superconductive state for a prolonged period of time.

Abstract: A process for coating a superconductive film onto a substrate is provided. In the first step of this process, a solution of the reagents required to produce the superconductive material is subjected to ultrasonic sound waves to create an aerosol. Thereafter, the aerosol contacted with plasma while being subjected to substantially atmospheric pressure and a radio frequency alternating current in excess of 100 kilohertz; a vapor is produced in this step. The vapor so produced is passed through an orifice and allowed to deposit onto a substrate.

Abstract: A tape based on a superconducting oxide containing Cu-O, the tape being characterized by the fact that it comprises a substrate of flexible metal or composite material having a rectangular cross-section and provided on at least one of its faces with a cavity-free film of perovskite type superconducting oxide having congruent or quasi-congruent melting or peritectic decomposition close to a eutectic point, the thickness of said film lying in the range 1 .mu.m to 100 .mu.m, the orientation of the C axis of the superconducting crystals being perpendicular to said face of said substrate.

Abstract: The invention relates to a process for making a superconducting connection between a pair of superconducting ceramic oxide pieces, each of the pieces having been formed by combining the metallic elements of the superconducting oxide in substantially the stoichiometric proportions needed to form the superconducting oxide into a precursor and forming the precursor into a shaped piece. The process comprises the steps of: contacting each of the shaped pieces with the other; connecting each of the shaped pieces to the other by means for forming a metallurgical bond between the shaped pieces; and oxidizing the connected shaped pieces under conditions sufficient to oxidize the metallic elements to the superconducting oxide.In other embodiments of the invention, the process is for forming a superconducting connection between a pair of pieces having a superconducting ceramic oxide/noble metal composition; or for forming a joint between a superconducting ceramic oxide and a normal conductor.

Abstract: A method for forming a superconductive thin film according to the invention wherein a superconductive thin film of an oxide obtaining Bi (bismuth) is formed on an substrate by a chemical vapor deposition technique makes use of triphenyl bismuth, Bi-(C.sub.6 H.sub.5).sub.3, as a gas source for bismuth. By this, the resultant superconductive thin film has a flat surface without damages, and good superconductive characteristics. Where the substrate is susceptible to oxidation, at least a mono-atomic layer of bismuth is formed on the substrate, after which the superconductive thin film is formed. Accordingly, stable transmission of a deposition gas is ensured with the substrate being prevented from oxidation.

Abstract: This invention is directed to a method of forming an article comprised of a substrate and an electrically conductive crystalline rare earth alkaline earth copper oxide thin film containing an R.sub.1 A.sub.2 C.sub.3 crystalline phase over an R.sub.2 A.sub.1 C.sub.1 crystalline phase, where R.sub.1 A.sub.1 and C represent rare earth, alkaline earth, and copper, respectively.

Abstract: An improved method for producing high temperature superconductors comprising sintering ceramic superconductor material in a sealed confinement chamber made of non-reactive impervious material, thereby preventing loss of oxygen from the material during heating and eliminating the need for reoxygenation after sintering.

Abstract: Improvement in a superconducting thin film of a superconducting compound oxide containing thallium (Tl) deposited on a substrate, characterized in that the superconducting thin film is deposited by PVD on {110} plane of a single crystal of magnesium oxide (MgO).

Abstract: A process of making high temperature Tl-based superconductors is disclosed. The process includes the steps of reacting solid Ba-Ca-Cu-oxides with Tl.sub.2 O.sub.3 vapor. The process allows high quality Tl-based superconductors to be easily fabricated.