Superconductor Patents (Class 427/62)
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Patent number: 5290761Abstract: A process for producing thin films of superconducting material by bombarding a heated target with radiation from pulsed high energy UV laser to form a plume of target material, and depositing the plume on a substrate is disclosed.Type: GrantFiled: October 19, 1992Date of Patent: March 1, 1994Assignee: E. I. Du Pont de Nemours and CompanyInventors: Kenneth B. Keating, Stephens S. The'
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Patent number: 5290758Abstract: Coatings such as high Tc superconductor material on substrates which incorporate reactive gases like oxygen and nitrogen are formed by providing the substrate so that it is spaced from the target region in a coating chamber, forming particles of the coating material by plasma from a cathodic target and entraining the particles to the substrate spaced from the plasma in a gas stream including the reactive gas and at a pressure of 0.1 to 20 mbar.Type: GrantFiled: March 10, 1992Date of Patent: March 1, 1994Assignee: Forschungszentrum Julich GmbHInventor: Roger Wordenweber
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Patent number: 5290760Abstract: A method of manufacturing an electrical contact between a current lead and a part made of a superconductive ceramic of the type RBa.sub.2 Cu.sub.3 O.sub.y, where R designates a lanthanide chosen from Y, La, Nd, Sm, Eu, Gd, Ho, Er, Tm, Yb, and Lu, and where y lies in the range 6.9 to 7, in which method a layer of a material based on a silver-containing resin is deposited on said part, the part is dried, and is then heat treated in oxygen by being heated to a temperature greater than 900.degree. C., and then cooled, with the temperature dwelling at 450.degree. C. for a certain length of time corresponding to the phase during which said ceramic is reoxygenated.Type: GrantFiled: June 3, 1992Date of Patent: March 1, 1994Assignee: GEC Alsthom SAInventors: Fernand Grivon, Jacques Bouthegourd
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Patent number: 5288697Abstract: Thin protective polyimide layers are produced on ceramic or high temperature superconductors by applying polyimide solutions, polyamic acids or starting substances therefor to the superconductor surface and imidating or drying in an oxygen atmosphere.Type: GrantFiled: May 6, 1992Date of Patent: February 22, 1994Assignee: BASF AktiengesellschaftInventors: Wolfgang Schrepp, Hans-Joachim Haehnle, Michael Grunze
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Patent number: 5286713Abstract: A superconducting circuit board is provided comprising a sintered alumina board containing more than 99% by weight of alumina and an interconnection pattern of an superconducting ceramics formed on the alumina board. Adhesion of the interconnection pattern to the alumina board is improved by an addition of Ti or Si coupling agent to a paste for forming the interconnection pattern. The use of copper powder in place of copper oxide powder as an ingredient forming a superconducting ceramics in the paste is advantageous for printing and obtaining a uniform superconducting ceramic pattern.Type: GrantFiled: May 21, 1993Date of Patent: February 15, 1994Assignee: Fujitsu LimitedInventors: Hiromitsu Yokoyama, Yoshihiko Imanaka, Kazunori Yamanaka, Nobuo Kamehara, Koichi Niwa, Takuya Uzumaki, Hitoshi Suzuki, Takato Machi
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Patent number: 5286712Abstract: This invention relates to new superconducting material having a composition represented by the general formula:A.sub.u B.sub.v C.sub.w D.sub.x E.sub.Type: GrantFiled: September 30, 1992Date of Patent: February 15, 1994Assignee: Sumitomo Electric Industries, Ltd.Inventors: Nobuhiko Fujita, Tadakazu Kobayashi, Hideo Itozaki, Saburo Tanaka, Shuji Yazu, Tetsuji Jodai
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Patent number: 5284779Abstract: Superconducting or conducting organic charge-transfer complex film is epitaxially grown on a substrate which has been given an oriented surface by applying a stearic acid film. The periodic charge distribution over the oriented surface regulates the formation of the complex film to arrange the molecules along a common axis. The alignment of the molecules in the complex film helps to have superconductivity or high conductivities.Type: GrantFiled: July 20, 1992Date of Patent: February 8, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Akiharu Miyanaga
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Patent number: 5284825Abstract: A superconducting structure is provided comprising a substrate, a superconductor coating supported by the substrate and a diffusion barrier positioned between the superconductor coating and the substrate to inhibit diffusion of contaminants from the substrate to the superconductor coating. The coating is a ceramic oxide having superconducting properties. The diffusion barrier may likewise be a ceramic oxide, but differs in its specific composition to provide it with a peritectic decomposition temperature greater than the superconductor coating. Accordingly, the diffusion barrier exhibits substantially lower atomic mobility than the superconductor coating during manufacture of the superconducting structure, thereby preventing contamination of the coating by the substrate.Type: GrantFiled: August 17, 1992Date of Patent: February 8, 1994Assignee: General AtomicsInventors: Richard B. Stephens, Frederick H. Elsner
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Patent number: 5284824Abstract: A method for manufacturing an oxide superconductor film is disclosed, which comprises the steps of: preparing a substrate; depositing an oxide superconductor film on said substrate by chemical vapor deposition (CVD); and supplying excited oxygen to or near a film deposition site on said substrate during the deposition of said film.Type: GrantFiled: June 23, 1992Date of Patent: February 8, 1994Assignee: Kabushiki Kaisha ToshibaInventors: Etsuo Noda, Setsuo Suzuki, Osami Morimiya, Kazuo Hayashi
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Patent number: 5283233Abstract: A method for producing a superconducting layer of YBa.sub.2 CU.sub.3 O.sub.7 on a sapphire substrate utilizes the steps of epitaxially growing an intermediate layer that at least contains a yttrium-stabilized zirconium oxide layer directly on the substrate, and then epitaxially growing a superconducting layer on the intermediate layer. In one embodiment, the step of growing the intermediate layer grows two sub-layers, with the first sub-layer being a yttrium-stabilized zirconium oxide layer and a second sub-layer being a yttrium oxide layer applied onto the first sub-layer.Type: GrantFiled: October 3, 1991Date of Patent: February 1, 1994Assignee: Siemens AktiengesellschaftInventors: Harald Schmidt, Klaudia Hradil, Wolfram Wersing
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Patent number: 5283232Abstract: A method for producing an oxide superconducting composite wire is disclosed, which comprises the steps of: (a) molding a powdered oxide superconductor material to form a wire; (b) heat treating the wire in an oxygen atmosphere thereby forming the wire into an oxide superconducting member; (c) forming a non-oxidizing metal intermediate layer on a surface of the oxide superconducting member; (d) bundling a plurality of the oxide superconducting members containing the intermediate layer; (e) inserting the bundled oxide superconducting members into an oxidizing metal support tube; and (f) drawing the product of step (e) to reduce its diameter and heat-treating it.Type: GrantFiled: August 20, 1992Date of Patent: February 1, 1994Assignee: Fujikura Ltd.Inventors: Osamu Kohno, Yoshimitsu Ikeno, Nobuyuki Sadakata, Masaru Sugimoto, Mikio Nakagawa
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Patent number: 5281447Abstract: The invention is directed to a method for forming a metal coating on a substrate by applying an oxalate of a Group VIII element from the Periodic Table of the Elements to the substrate. The oxalate is selected so that it will decompose to a complex of a zero valent Group VIII element or a Group VIII element on exposure to an energy source. Microelectronic circuits, etch masks or metal contacts on superconductors can be formed by the method when the oxalate coating is exposed to an energy source through a mask or the energy source beamed at the oxalate to trace a pattern on it.The metal thus obtained can be subsequently coated by electroless compositions especially where the Group VIII element is a catalyst for electroless coatings such as palladium. Additionally, the metal coating may be coated by an electrolytic composition.Type: GrantFiled: October 25, 1991Date of Patent: January 25, 1994Assignee: International Business Machines CorporationInventors: Michael J. Brady, Stephen L. Buchwalter, Richard J. Gambino, Martin J. Goldberg, Kam L. Lee, Alfred Viehbeck
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Patent number: 5281575Abstract: In manufacturing a high-temperature superconductive oxide thin film by irradiating a laser beam onto an oxide target in an atmosphere of oxygen to form the high-temperature superconductive oxide thin film on an oxide substrate, the laser beam is irradiated from a back surface of the substrate and is transmitted through the substrate, and thereafter the laser beam is irradiated onto the oxide target.Type: GrantFiled: April 21, 1992Date of Patent: January 25, 1994Assignees: International Superconductivity Technology Center, Kabushiki Kaisha Kobe Seiko Sho, Hitachi Densen Kabushiki KaishaInventors: Takashi Hase, Tadataka Morishita, Katsumi Ohata, Hirohiko Izumi
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Patent number: 5280013Abstract: A superconducting electronic circuit device, useful when impedance matching is desired, especially suited to microwave frequencies, consisting of a thin dielectric layer with superconducting layers on both sides. A superconductor such as Yttrium Barium Copper Oxide (YBCO) is formed on a first substrate such as lanthanum aluminate. A protective layer like gold is deposited on the YBCO and a second carrier substrate is bonded to the protected YBCO. The first substrate is then thinned into a thin dielectric film and a second layer of superconductor is epitaxially grown thereon to create the desired circuits.Type: GrantFiled: October 29, 1992Date of Patent: January 18, 1994Assignee: Conductus, Inc.Inventors: Nathan Newman, Aharon Kapitulnik, Brady F. Cole, Randy W. Simon
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Patent number: 5280012Abstract: This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.Type: GrantFiled: July 22, 1992Date of Patent: January 18, 1994Assignee: Advanced Technology Materials Inc.Inventors: Peter S. Kirlin, Duncan W. Brown, Robin A. Gardiner
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Patent number: 5278140Abstract: A method is disclosed for fabricating grain boundary junction devices, which comprises preparing a crystalline substrate containing at least one grain boundary therein, epitaxially depositing a high Tc superconducting layer on the substrate, patterning the superconducting layer to leave at least two superconducting regions on either side of the grain boundary and making electrical contacts to the superconducting regions so that bias currents can be produced across the grain boundary.Type: GrantFiled: September 16, 1992Date of Patent: January 11, 1994Assignee: International Business Machines CorporationInventors: Praveen Chaudhari, Cheng-Chung J. Chi, Duane B. Dimos, Jochen D. Mannhart, Chang C. Tsuei
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Patent number: 5278138Abstract: A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed.Type: GrantFiled: October 11, 1991Date of Patent: January 11, 1994Inventors: Kevin C. Ott, Toivo T. Kodas
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Patent number: 5276012Abstract: A method is disclosed of forming an oxide superconducting film comprising the steps of (1) mixing (a) the vapors of organic metal materials in such proportions as to provide a predetermined metal composition, or (b) said organic metal materials in such proportions as to provide a predetermined metal composition vaporizing and mixture, and (2) bringing the mixture into contact with a heated substrate so that an oxide superconducting film is formed on said substrate by a chemical vapor deposition process, wherein laser light is applied onto said substrate during formation of said oxide superconducting film on said substrate, whereby the crystallographic orientation of said oxide superconducting film being formed in the irradiated area of said substrate is such that the c-axis is parallel to the substrate.Type: GrantFiled: February 11, 1992Date of Patent: January 4, 1994Assignees: NGK Spark Plug Co., Ltd., International Superconductivity Technology Center, Hitachi Ltd.Inventors: Takahisa Ushida, Kazutoshi Higashiyama, Izumi Hirabayashi, Shoji Tanaka
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Patent number: 5276010Abstract: A process for producing an oxide crystalline thin film having a structure in which atomic layers having different chemical compositions are laminated along the film thickness direction, the process including the steps of depositing amorphous atomic layers on a substrate, layer by layer and heating the amorphous deposit to crystallize the deposit, the respective amorphous atomic layers having the same chemical compositions as those of the corresponding atomic layers of the oxide crystal structure and being stacked in an order corresponding to the atomic lamination of the crystal structure.Type: GrantFiled: February 15, 1991Date of Patent: January 4, 1994Assignee: Fujitsu LimitedInventor: Nobuo Sasaki
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Patent number: 5273957Abstract: A process is described for producing a superconducting thick layer on a base material by thermally spraying a powder containing bismuth, lead, strontium, calcium and copper in oxidic form. First a powdered starting mixture is prepared which has a composition corresponding to the formula:Bi.sub.1.90-x Pb.sub.x Sr.sub.2-y Ca.sub.2.2-z Cu.sub.3.5-q O.sub.v,in which0.1.ltoreq.x.ltoreq.0.7,0.ltoreq.y.ltoreq.0.4,-0.5.ltoreq.z.ltoreq.+0.5,0.ltoreq.q.ltoreq.1.2 andv is the oxygen content calculated from the starting materials. Then the powder is heated for not less than 1 hour at a temperature of not less than 750.degree. C. in an oxygen-containing atmosphere and cooled again. The powder pre-reacted in this way is applied to a thermally stable substrate in a layer thickness of 0.5 to 7 mm by means of a burner by plasma-jet spraying or by flame spraying. The layer applied is then sintered for a time of not less than 40 hours at a temperature of 842.degree. to 848.degree. C. The layer is cooled to a temperature of 550.Type: GrantFiled: December 2, 1991Date of Patent: December 28, 1993Assignee: Hoechst AktiengesellschaftInventors: Martin Schwarz, Eugen Morach, Hubert Schindler, Sabine Junger
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Patent number: 5273954Abstract: A method of manufacturing a superconducting ceramics elongated body by forming a longitudinally continuous superconducting layer on at least a part of the surface of a flexible ceramics elongated substrate by evaporation under the presence of oxygen ions.Type: GrantFiled: February 7, 1992Date of Patent: December 28, 1993Assignee: Fukami Patent OfficeInventors: Satoshi Takano, Kenichi Takahashi, Kenji Miyazaki, Noriyuki Yoshida, Shinji Inazawa, Noriki Hayashi
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Patent number: 5274249Abstract: A superconducting field effect device includes a substrate with an epitaxial superconducting film upon it and an insulating layer above a thinner region of the film which protects the film from the atmosphere and isolates it from a gate electrode which is on the insulating layer above a channel region of the thin film, and the epitaxial film has thicker regions suitable for contact to source and drain electrodes. Gate electrodes may be isolated from and oppose both sides of the superconducting thin regions so that enhanced modulation of a current in the thin region is provided.The invention provides high speed and high efficiency switches and modulators.Type: GrantFiled: December 20, 1991Date of Patent: December 28, 1993Assignee: University of MarylandInventors: Xiaoxing Xi, Chris Doughty, Thirumalai Venkatesan
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Patent number: 5272131Abstract: A process is provided for forming an oriented thick film superconducting coating on a polycrystalline substrate. The coating includes at least two highly oriented compounds ofBi.sub.a Sr.sub.b Ca.sub.c Cu.sub.d O.sub.x (BSCCO)wherein, in one component, a is 2, b is 2, c is 1, d is 2, and x is 8 and, in another component, a is 2, b is 2, c is 0, d is 1, and x is .apprxeq.6. The process comprising applying a powdered mixture prepared from BiO.sub.3, SrCO.sub.3, CaCO.sub.3, and CuO onto a polycrystalline substrate; rapidly heating the resultant coated substrate to a temperature of from about 1000.degree.-1100.degree. C. for a period of from about 30 minutes, thereby melting the powder and forming a thick film coating; rapidly quenching the coated substrate below which phase transition occurs; and annealing the resultant coated substrate by heating in an atmosphere of an oxygen-containing gas to a temperature of from about 850.degree.-870.degree. C.Type: GrantFiled: March 21, 1990Date of Patent: December 21, 1993Assignee: The United States of America as represented by the Secretary of the NavyInventors: Louis E. Toth, J. Richard Spann
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Patent number: 5272132Abstract: Filamentary and sheet-like oxide superconductive bodies can be produced by ceramic fabrication techniques such as extrusion, screen printing, tape casting and slip casting, provided the firing conditions are chosen such that the correct amount of oxygen deficiency is attained in the ceramic, and such that contact with chemically non-compatible material is avoided. Thus produced superconductive bodies are advantageously incorporated into apparatus such as magnets, power cables, interconnects, electrical components, and sensors.Type: GrantFiled: November 14, 1991Date of Patent: December 21, 1993Assignee: AT&T Bell LaboratoriesInventors: Ernst M. Gyorgy, David W. Johnson, Jr.
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Patent number: 5272133Abstract: An oxide superconductor having a high critical temperature is provided with a passivation coating comprising a first layer of a Group II oxide, such as magnesium oxide, and a second layer of a polymer, such as polyimide. The Group II oxide is formed under conditions to be substantially amorphous. After depositing the Group II, layer, the encapsulated superconductor is heated to an elevated temperature for a period of time in an oxidizing atmosphere. This restores the high critical temperature to its original value. The polymer is then coated on top of the Group II oxide and cured. The passivation coating is resistant to strong acids, strong bases, and water, is robust, hard, and resilient against scratching.Type: GrantFiled: February 27, 1992Date of Patent: December 21, 1993Assignee: Hughes Aircraft CompanyInventors: Jack Y. Josefowicz, David B. Rensch, Kai-Wei Nieh
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Patent number: 5270296Abstract: A method of making a composite high-temperature superconducting wire in which a layer of a superconductive oxide is coated onto a refractory core by melting a zone of the layer uniformly all around the core as the core is drawn through the focus of a reflector having the shape of a paraboloid of revolution while directing onto the reflector a collimated beam of an energy sufficient to melt the layer. The melted layer is cooled with a substantially radially symmetrical thermal gradient to form the superconducting oxide ceramic layer on the core with radially-directed growth of columnar grains of the superconducting oxide ceramic.Type: GrantFiled: April 30, 1992Date of Patent: December 14, 1993Assignee: Troy Investments Inc.Inventor: Aharon Z. Hed
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Patent number: 5270294Abstract: A substrate-free, free-standing epitaxially oriented superconductive film including a layer of a template material and a layer of a ceramic superconducting material is provided together with a method of making such a substrate-free ceramic superconductive film by coating an etchable material with a template layer, coating the template layer with a layer of a ceramic superconductive material, coating the layer of ceramic superconductive material with a protective material, removing the etchable material by an appropriate means so that the etchable material is separated from a composite structure including the template layThis invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).Type: GrantFiled: December 27, 1991Date of Patent: December 14, 1993Assignee: The United States of America as represented by the United States Department of EnergyInventors: Xin D. Wu, Ross E. Muenchausen
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Patent number: 5268354Abstract: A process making thin film elements of an oxide superconductor (Tl..sub.5 Pb.sub.0.5)Sr.sub.2 CaCu.sub.2 O.sub.7, (Tl..sub.5 Pb.sub.0.5)Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.9 or a mixture thereof. The process entails forming an oxide film of a mixture of oxides of Pb, Sr, Ca and Cu in preselected amounts, placing the oxide film in a container of nonreactive metal such as gold that contains a powder of (Tl..sub.5 Pb.sub.0.5)Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.9 superconductor, sealing the container, and heating the sealed container to a temperature of about 820.degree. C. to about 950.degree. C. for at least 1 minute.Type: GrantFiled: March 20, 1992Date of Patent: December 7, 1993Assignee: E. I. Du Pont de Nemours and ComapnyInventors: Graciela B. Blanchet-Fincher, Curtis R. Fincher, Jr., Norman Herron
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Patent number: 5266558Abstract: These superconducting circuit elements, namely SNS heterostructures, such as, e.g. Josephson junctions and field-effect transistors, have a sandwich structure consisting of at least one layer of high-T.sub.c superconductor material arranged adjacent to a metallic substrate, possibly with an insulating layer in between, the substrate, the superconductor and--if present--the insulator all consisting of materials having at least approximately matching molecular structures and lattice constants. Electrical contacts, such as source, drain and gate electrodes are attached to the superconductor layer and to the substrate, respectively. The electrically conductive substrate consists of a metallic oxide such as strontium ruthenate Sr.sub.2 RuO.sub.4, whereas the superconductor layer is of the copper oxide type and may be YBa.sub.2 Cu.sub.3 O.sub.7-.delta., for example. The insulator layer (10) may consist of SrTiO.sub.3.Type: GrantFiled: February 27, 1992Date of Patent: November 30, 1993Assignee: International Business Machines CorporationInventors: Frank Lichtenberg, Jochen Mannhart, Darrell Schlom
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Patent number: 5264412Abstract: A method is provided for forming a thin film of an oxide superconductor on a substrate by laser ablation. Energy distribution in the section of a laser beam is homogenized within 10%. The homogenized laser beam is applied onto a target. A thin high-quality film of material ablated from the target is thus formed on a substrate which is arranged to face the target.Type: GrantFiled: August 12, 1991Date of Patent: November 23, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Nobuhiro Ota, Tatsuoki Nagaishi, Naoji Fujimori
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Patent number: 5262026Abstract: In a method for manufacturing a device having a film of high temperature superconductor, a copper substrate is used in the electrophoretic deposition as a cathode on which fine powders of superconductor should be deposited, and the fine powders deposited on the substrate are fired in the conditions that they are sintered partially.In other methods for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, and a minute pattern of fine powders is deposited according to the pattern of the cathode. Then, the fine powders are fired to form a superconductor film. Such a desired pattern of the cathode is formed by the patterning of a film of an electrically insulating substrate. Such a desired pattern of the cathode is also formed by the patterning of an electrically insulating material, applied to an electrically conductive substrate.Type: GrantFiled: July 2, 1992Date of Patent: November 16, 1993Assignee: Sharp Kabushiki KaishaInventors: Hideo Nojima, Masayoshi Koba, Masaya Nagata, Hidetaka Shintaku
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Patent number: 5261151Abstract: A Nb-Ti or Nb-Zr low temperature superconducting (LTS) wire is coat with ten AgN0.sub.3 which is then decomposed to form a uniform silver metal (Ag) coating on the LTS wire. A uniform coating of molten Al or Al alloy is formed on the Ag coated LTS wire and then solidified. A bundle of the coated LTS wires is inserted into an Al or Al alloy tube and cold worked to form a multifilamentary LTS cable comprising the Ag coated LTS wires each surrounded by an Al or Al alloy matrix.Type: GrantFiled: July 17, 1992Date of Patent: November 16, 1993Assignee: The United States of America as represented by the Secretary of the NavyInventors: William A. Ferrando, Amarnath P. Divecha, James Kerr
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Patent number: 5262396Abstract: A method for forming a superconducting oxide material including introducing an oxygen or an oxidizing gas and a reactive gas or reactive solution or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber; supplying microwaves to the plasma generating chamber wherein the direction of the magnetic field and the propagation direction of the microwaves are parallel such that the oxygen or the oxidizing gas and the reactive gas or reactive solution or reactive minute particles are converting into the plasma; and forming the superconducting oxide material on a film forming surface positioned in the plasma generating chamber during the application of the magnetic field.Type: GrantFiled: May 13, 1992Date of Patent: November 16, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 5260265Abstract: An Improved method of manufacturing superconducting ceramics in the form of a thin film are described. The thin film is first formed of a superimposed structure composed of three films which contain a rare earth metal, an alkalline earth metal and copper respectively. Then the superimposed thin film is fired to convert to a superconducting film.Type: GrantFiled: January 10, 1992Date of Patent: November 9, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 5260251Abstract: A process for making a superconducting Tl--Pb--Sr--Ca--Cu--O thin film comprised of at least one phase of the formula Tl.sub.0.5 Pb.sub.0.5 Sr.sub.2 Ca.sub.1+n Cu.sub.2+n O.sub.7+2n where n=0, 1 or 2. The process comprises sputtering an oxide film onto a dielectric substrate from an oxide target containing preselected amounts of Tl, Pb, Sr, Ca and Cu, and heating an oxygen-containing atmosphere in the deposited film in the presence of a source of thallium oxide and lead oxide and cooling the film.Type: GrantFiled: June 6, 1991Date of Patent: November 9, 1993Assignee: E. I. Du Pont de Nemours and CompanyInventors: Dennis J. Kountz, Frank M. Pellicone
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Patent number: 5260267Abstract: A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi.sub.2 O.sub.3 being interposed between the superconducting thin film and the substrate.Type: GrantFiled: August 4, 1992Date of Patent: November 9, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Keizo Harada, Hideo Itozaki
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Patent number: 5258366Abstract: Improvement in a method for preparing a superconducting thin film of compound oxide on a substrate (6) by laser evaporation technique. A rear surface of a target (7) used is cooled forcedly by a cooling system (9) during film formation.Type: GrantFiled: July 29, 1992Date of Patent: November 2, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tatsuoki Nagaishi, Hidenori Nakanishi, Saburo Tanaka, Hideo Itozaki
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Patent number: 5256636Abstract: A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.Type: GrantFiled: September 21, 1990Date of Patent: October 26, 1993Assignee: The Regents of the University of Calif.Inventors: Frederick C. Wellstood, John J. Kingston, John Clarke
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Patent number: 5254530Abstract: A Bi-Sr-Ca-Cu-O-type superconductive film is formed on an MgO (100) single crystal substrate by the chemical vapor deposition method at a film formation speed of 780.degree. C. or less and a film formation speed of 1.0 nm/min or more, and exhibits an a-axis or b-axis preferential growth with respect to the substrate surface.Type: GrantFiled: June 18, 1992Date of Patent: October 19, 1993Assignees: International Superconductivity Technology Center, Ube Industries, Ltd., Sharp Corporatoin, Fujikura Ltd.Inventors: Tsunemi Sugimoto, Kazushi Sugawara, Mikio Nakagawa, Yuh Shiohara
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Patent number: 5252553Abstract: In order to prepare a good quality crystalline thin film of compound oxide superconductor on a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is first heated at a temperature of higher than 900.degree. C. in a high vacuum of less than 10.sup.-6 Torr, then, a thin film of ZrO.sub.2 is deposited on the silicon wafer, and finally, the thin film of ZrO.sub.2 deposited on the silicon wafer is annealed in air at a temperature of 800.degree. to 850.degree. C.Type: GrantFiled: May 20, 1992Date of Patent: October 12, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hidenori Nakanishi, Shinichi Shikata, Hideo Itozaki
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Patent number: 5252547Abstract: An outer surface of a superconducting film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. is protected with a protective layer which is composed of any one of (i) oxide of metal such as MgO, CaO, SrO etc, (ii) carbide such as SiC, or (iii) nitride such as BN.Type: GrantFiled: October 9, 1990Date of Patent: October 12, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideo Itozaki, Saburo Tanaka, Nobuhiko Fujita, Shuji Yazu, Tetsuji Jodai
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Patent number: 5252550Abstract: The present invention relates to a method of producing a superconducting composite wire. The method comprises forming a continuously supplied metal or metal alloy strip into a flume-shaped strip. A ceramic copper oxide superconducting powder material is filled in the interior of the flume-shaped strip. The flume-shaped strip is rolled such that a first edge of the strip approaches a second edge of the strip to form a tubing having a gap between the first and second edges and also having the powder material enveloped therein. The gap allows free access of oxygen to the powder material during a subsequent sintering step. The powder material is then sintered at a temperature of between 0 and 100.degree. C. less than the lowest melting point of any constituent of the material. The strip enveloping the sintered material is then deformed to a reduced cross-section and subjected to a heat treatment.Type: GrantFiled: July 26, 1991Date of Patent: October 12, 1993Inventors: Kazuhisa Yamauchi, Kazuya Ohmatsu, Tetsuya Ishida, Tomoji Gotoh, Syuji Yazu, Tetsuji Jodai
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Patent number: 5250511Abstract: Method for preparing a superconducting thin film of compound oxide having improved properties on a substrate by laser evaporation technique. A target has a surface area which is smaller than an irradiation area of a spot of a laser beam used, so that whole surface of the surface is irradiated with the laser beam.Type: GrantFiled: July 29, 1992Date of Patent: October 5, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tatsuoki Nagaishi, Hidenori Nakanishi, Saburo Tanaka, Hideo Itozaki
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Patent number: 5250817Type: GrantFiled: August 12, 1992Date of Patent: October 5, 1993Assignee: Microelectronics and Computer Technology CorporationInventor: Richard L. Fink
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Patent number: 5248656Abstract: A method for producing superconductor wire characterized by forming a solid superconductor preform, suspending the preform within an oven such that a portion of it is heated to approximately its melting point, and drawing on the melted portion of the preform to form a superconductor wire. If the preform is solid, so is the drawn wire, and if the preform is hollow, the drawn wire becomes a capillary. Superconductor wires can be intertwined, or can be intertwined with ordinary conductive wires or non-conductive tubing to form superconductor cables. A superconductor transmission line is made by coating a copper tube with subsequent superconductor, insulating, and protective layers.Type: GrantFiled: October 9, 1990Date of Patent: September 28, 1993Assignee: Hewlett-Packard CompanyInventors: V. K. Nagesh, John P. Scalia
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Patent number: 5248662Abstract: In order to prepare an elongated oxide superconducting material which exhibits a high critical current density, a tape-type substrate (7) of silver, for example, formed by unidirectional solidification is prepared and an excimer laser beam (9) is applied to target (8) of an oxide superconductor to deposit atoms and/or molecules being scattered from the target (8) on the substrate (7), thereby forming an oxide superconducting film on the substrate (7).Type: GrantFiled: January 31, 1992Date of Patent: September 28, 1993Assignees: Sumitomo Electric Industries, Tokyo Electric Power CompanyInventors: Noriyuki Yoshida, Satoshi Takano, Tsukushi Hara, Kiyoshi Okaniwa, Takahiko Yamamoto
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Patent number: 5248658Abstract: A superconducting ceramic film is deposited on a substrate by sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is irradiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.Type: GrantFiled: September 23, 1991Date of Patent: September 28, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shumpei Yamazaki
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Patent number: 5248663Abstract: A method of forming a superconductor pattern in which at lest a pair of electrodes is formed on a substrate in spaced, facing relationship nd an oxide superconductor thin film having a unit lattice which assumes a laminar structure then is formed on the substrate, extending between and contacting the electrodes. The superconductor pattern obtained by this method suffers less degradation of the superconductor thin film, in comparison with that of patterns formed by the prior art methods, and the decrease of the critical current density as a function of increasing temperature is extremely small.Type: GrantFiled: March 13, 1992Date of Patent: September 28, 1993Assignee: Fujitsu LimitedInventors: Hideyuki Noshiro, Seigen Otani
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Patent number: 5248657Abstract: A superconducting conductor assembly using high temperature materials. A double-walled tubular structure has at least one helical strip of superconductive material on the inner wall of the inside tube. Brittle, non-ductile superconducting materials may be used. A coolant, typically liquid nitrogen, is circulated between the tubes to maintain the superconductor below the critical temperature of the superconductor. A buffer layer is preferably included between tube wall and superconductor. A plurality of alternating layers of buffer and superconductor may be used.Type: GrantFiled: May 13, 1991Date of Patent: September 28, 1993Assignee: General Dynamics Corporation, Space Systems DivisionInventors: Richard E. Bailey, Foster M. Kimball, Eddie M. Leung, Robert D. McConnell
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Patent number: H1239Abstract: A process for extruding a superconducting metal oxide composition YBa.sub.2 Cu.sub.3 O.sub.7-x provides a wire (tube or ribbon) having a cohesive mass and a degree of flexibility together with enhanced electrical properties. Wire diameters in the range of 6-85 mils have been produced with smaller wires on the order of 10 mils in diameter exhibiting enhanced flexibility for forming braided, or multistrand, configurations for greater current carrying capacity. The composition for extrusion contains a polymeric binder to provide a cohesive mass to bind the particles together during the extrusion process with the binder subsequently removed at lower temperatures during sintering. The composition for extrusion further includes a deflocculent, an organic plasticizer and a solvent which also are subsequently removed during sintering. Electrically conductive tubing with an inner diameter of 52 mil and an outer diameter of 87-355 mil has also been produced.Type: GrantFiled: August 23, 1990Date of Patent: October 5, 1993Assignee: The United States of America as represented by the United States Department of EnergyInventor: Joseph T. Dusek