Superconductor Patents (Class 427/62)
  • Patent number: 5246729
    Abstract: The composite insulation coating consists of a mixture of glass and ceramic oxide(s), coated onto a wire by conventional wire enameling techniques followed by heat treatment at 600.degree.-850.degree. C. The enamel when initially applied, the "green" coat slurry, consists of four components: (1) the glass, (2) an inorganic filler (ceramic oxide powder, (3) an organic binder and (4) an organic solvent. The glasses can be selected from several commercial glasses (Corning 7570 and 7050) as well as Westinghouse glasses A-508, M 3072 and M 3073. None of these glasses contain lead or boron, allowing for nuclear applications. Suitable ceramic fillers are alumina, and the CeramPhysics, Inc. ceramics SC1C and SC1A. Organic binder materials and solvents are used. It is preferable that a copper wire to be coated with Ni, Inconel or Cr prior to coating with the subject insulation. For superconductors, the brittle nature of Nb.sub.3 Sn wire and the high reaction temperature (.about.700.degree. C.
    Type: Grant
    Filed: March 10, 1988
    Date of Patent: September 21, 1993
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Tapan K. Gupta, George J. Bich, William N. Lawless
  • Patent number: 5242898
    Abstract: A method of forming a superconducting circuit comprises the steps of preparing a ceramics body which is changed from a non-superconductive phase not superconducting at the working temperature into a superconducting phase superconducting at the working temperature by heat treatment and performing the heat treatment on a part of the ceramics body by applying a laser beam to the ceramics body to change the same into the superconductive phase, thereby to form a superconducting circuit consisting of the superconductive phase and the non-superconductive phase on the ceramics body.
    Type: Grant
    Filed: May 19, 1992
    Date of Patent: September 7, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenichi Takahashi, Noriyuki Yoshida, Jun Shioya, Yoichi Yamaguchi, Akira Mizoguchi, Noriki Hayashi, Satoshi Takano, Kenji Miyazaki
  • Patent number: 5240905
    Abstract: A metal electrode formed on an oxide superconductor for electric connection to the oxide superconductor, includes a first layer of Ag in direct contact with the oxide superconductor, and a second layer formed on the first layer. The second layer is formed of noble metal excluding Ag. The metal electrode can be formed by forming a first layer of Ag to cover a whole surface of the oxide superconductor layer, and forming a second layer of noble metal excluding Ag, to cover a whole surface of the first layer, thereby to form a double metal layer, and patterning the double metal layer so as to form a metal electrode composed of the double metal layer.
    Type: Grant
    Filed: January 28, 1992
    Date of Patent: August 31, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Saburo Tanaka, Hideo Itozaki, Shuji Yazu
  • Patent number: 5241191
    Abstract: A cubic perovskite crystal structure is disclosed satisfying the unit cell formula:R.sub.0.33+z A.sub.0.67 C.sub.1-y O.sub.3-xwhereR, A and C represent rare earth, alkaline earth and copper atoms, respectively, capable of forming a superconductive R.sub.1 A.sub.2 C.sub.3 orthorhombic perovskite crystal structure;x is 0.67 to 1.0;y is up to 0.2; andz is up to 0.1.The crystal structure can be used to form superconductive superlattices and weak links for Josephson junction devices. The crystal structure can be produced by laser ablation deposition at a temperature below that required for the formation of a superconductive R.sub.1 A.sub.2 C.sub.3 orthorhombic perovskite crystal structure. The crystal structure can be used as a substrate for the subsequent deposition of an R.sub.1 A.sub.2 C.sub.3 orthorhombic perovskite crystal structure.
    Type: Grant
    Filed: December 31, 1991
    Date of Patent: August 31, 1993
    Assignee: Eastman Kodak Company
    Inventors: John A. Agostinelli, Samuel Chen
  • Patent number: 5240906
    Abstract: An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.
    Type: Grant
    Filed: April 7, 1992
    Date of Patent: August 31, 1993
    Assignee: International Business Machines Corporation
    Inventors: Johannes G. Bednorz, Jochen D. Mannhart, Carl A. Mueller, Darrell Schlom
  • Patent number: 5240904
    Abstract: Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.
    Type: Grant
    Filed: May 30, 1991
    Date of Patent: August 31, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Saburo Tanaka, Hidenori Nakanishi, Hideo Itozaki
  • Patent number: 5236892
    Abstract: A method for manufacturing a superconducting article, comprising the steps of: forming a first layer comprising a mixture of LnBa.sub.2 Cu.sub.3 O.sub.x and Ln.sub.2 BaC oxid, on the surface of a substrate, said Ln being an optional rare earth element; then locally and sequentially/heating and melting the first layer to locally and sequentially form a molten pool of the mixture of the first layer, and causing the molten pool of the first layer to locally and sequentially solidify, thereby arranging the a-b plane of the crystal of the mixture of the first layer in parallel with the surface of the substrate; then forming a second layer comprising a mixture of at least CuO and BaCuO.sub.2 on the surface of the first layer; and then melting the mixture of the second layer to cause the resultant melt of the mixture of the second layer to diffusion-react with Ln.sub.2 BaCu oxide, in the first layer so as to convert the first and second into a film of a superconducting substance comprising LnBa.sub.2 Cu.sub.3 O.sub.
    Type: Grant
    Filed: November 8, 1991
    Date of Patent: August 17, 1993
    Assignee: NKK Corporation
    Inventors: Yukio Shinbo, Moriaki Ono, Makoto Kabasawa, Shigeyoshi Kosuga
  • Patent number: 5236896
    Abstract: A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.
    Type: Grant
    Filed: October 8, 1991
    Date of Patent: August 17, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nakamura, Hiroshi Inada, Michitomo Iiyama
  • Patent number: 5236890
    Abstract: A method of producing a superconductor of metal oxides which includes subjecting an organic solvent solution containing (a) an alkoxide of a rare earth element, (b) an alkoxide of an alkaline earth metal and (c) copper alkoxide or cupric nitrate to hydrolysis in the presence of water and nitrate ions, thereby forming a mixture containing a gel-like substance. The gel-like substance is, after being dried and formed into a desired shape, pyrolyzed at a temperature of 600.degree.-950.degree.C. to form a superconductor of oxides of the rare earth, the alkaline earth metal and copper.
    Type: Grant
    Filed: October 31, 1990
    Date of Patent: August 17, 1993
    Assignees: Kabushiki-Gaisha Arubakku Kohporehtosentah, Nippon Mining Co., Ltd., Ishikawajima-Harima Jukogyo Kabushiki Kaisha, The International Superconductivity Technology Center
    Inventors: Hirohiko Murakami, Junya Nishino, Seiji Yaegashi, Yu Shiohara, Shoji Tanaka
  • Patent number: 5236895
    Abstract: There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.
    Type: Grant
    Filed: July 23, 1991
    Date of Patent: August 17, 1993
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Yukio Nishiyama, Shichio Kawai, Tomoji Kawai, Hitoshi Tabata, Osamu Murata, Junzo Fujioka
  • Patent number: 5234901
    Abstract: Improvement in a process for depositing a thin film on an oxide superconductor thin film deposited previously on a substrate.A surface of the thin film of oxide superconductor is irradiated with laser beam pulses in high-vacuum of lower than 1.times.10.sup.-6 Torr before said another thin film is deposited thereon.The invention is applicable to fabrication of electronics devices such as Josephson element or superconducting transistors.
    Type: Grant
    Filed: July 12, 1991
    Date of Patent: August 10, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mitsuchika Saitoh, Michitomo Iiyama
  • Patent number: 5232903
    Abstract: A superconducting device has an oxide superconducting material with a passivation or blocking film formed on its surface. The film helps to maintain a uniform oxygen concentration of the superconducting material through its thickness. The superconducting material is thus superconductive throughout its cross-section, and particularly in the vicinity of the surface bearing the film.
    Type: Grant
    Filed: March 13, 1991
    Date of Patent: August 3, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5232901
    Abstract: There is provided a method of producing a protective metal coated or covered superconducting ceramic wire by applying a finely pulverized protective metal-dispersed polymeric resin onto the surface of a glass wire in amorphous state of metal oxides capable of being converted into superconductive ceramic, heating the wire to remove the polymeric resin therefrom to obtain the wire having a metal powder coating thereon, and heat-treating the wire to become superconductive. The coating is easily conducted without damaging the excellent productivity of the so-called melt-quenching and preform wire-drawing process for producing a superconducting ceramic wire.
    Type: Grant
    Filed: March 7, 1991
    Date of Patent: August 3, 1993
    Assignee: Sumitomo Electric Industries, Inc.
    Inventors: Masashi Onishi, Takashi Kohgo, Yoshiki Chigusa, Minoru Watanabe
  • Patent number: 5232908
    Abstract: A method of manufacturing an oxide superconductor including (a) alternately laminating at least one first layer including an oxide superconductor or a precursor thereof with at least one second layer including a metal material to form a laminated body, (b) forming an outermost metal coating layer of the metal material on the laminated body to form a laminated structure, and (c) heating and cooling the laminated structure or elongating the laminated structure into a desired shape and then carrying out heating and cooling.
    Type: Grant
    Filed: January 9, 1992
    Date of Patent: August 3, 1993
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Shoji Shiga, Naoki Uno, Noritsugu Enomoto, Hiroyuki Kikuchi
  • Patent number: 5232909
    Abstract: A superconducting ceramics elongated body comprising a flexible ceramics elongated substrate and an oxide ceramics superconducting layer formed at least on a part of the surface of the ceramics elongated substrate to longitudinally extend along the ceramics elongated substrate. The superconducting ceramics elongated body further comprises a protective layer of ceramics containing a nitride, which is provided to at least cover the surface of the superconducting layer exposed on the ceramics elongated substrate. A method of manufacturing a superconducting ceramics elongated body by forming a longitudinally continuous superconducting layer on at least a part of the surface of a flexible ceramics elongated substrate. The superconducting layer is formed on the elongated substrate by a sol-gel method, a coating/sintering method, evaporation under oxygen ions, deposition from a fluoride solution or oxidation after application of corresponding fluorides.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: August 3, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Satoshi Takano, Kenichi Takahashi, Kenji Miyazaki, Noriyuki Yoshida, Shinji Inazawa, Noriki Hayashi
  • Patent number: 5232906
    Abstract: The present invention relates to a sintered oxide superconducting wire and a method of fabricating the same. The sintered superconducting wire is made by packing powders of metal oxides, or a mixture of metal oxides and metal carbonates, each having an oxidation potential (.DELTA.G.degree.) higher than or equal to that of copper in a metallic cylinder, drawing said packed cylinder and sintering said drawn cylinder in air to form said wire.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: August 3, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Susumu Yamamoto, Nozomu Kawabe, Teruyuki Murai
  • Patent number: 5231074
    Abstract: Highly-textured superconductor oxide thin films are prepared on substrates, including lattice matched, non-lattice matThe Government has rights in this invention pursuant to contract Number MDA972-88-K0006 awarded by the U.S. Defense Advance Research Project Agency.
    Type: Grant
    Filed: April 17, 1990
    Date of Patent: July 27, 1993
    Assignee: Massachusetts Institute of Technology
    Inventors: Michael J. Cima, Paul McIntyre
  • Patent number: 5230924
    Abstract: A method for forming metallized coatings on ceramics for high-temperature uses above about 630.degree. C. comprising the steps of: preparing a metallizing composition of mixed ingredients of differing sizes, proportioning the differing sizes to have nonsegregating qualities when applied onto the ceramics, coating the metallizing composition on the ceramics and heating to form the desired metallized layers.
    Type: Grant
    Filed: January 22, 1991
    Date of Patent: July 27, 1993
    Inventor: Chou H. Li
  • Patent number: 5229361
    Abstract: A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.
    Type: Grant
    Filed: April 2, 1992
    Date of Patent: July 20, 1993
    Assignee: Japan Atomic Energy Research Institute
    Inventors: Kensuke Shiraishi, Yasuo Otoguro, Koichi Yano
  • Patent number: 5229360
    Abstract: A method for forming a superconducting circuit is disclosed, comprising the steps of forming a mask pattern on a superconducting layer, forming a covering layer, containing a modifying element for superconductor, on the resultant structure, diffusing the modifying element for a superconductor, which is contained in the covering layer, into the superconducting layer to modify a corresponding location to a nonsuperconducting layer. A method for forming a multi-layer superconducting circuit is also disclosed, comprising sequentially repeating the same steps as set forth above over a substrate.
    Type: Grant
    Filed: February 6, 1992
    Date of Patent: July 20, 1993
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Shoji Shiga, Koki Sato, Nakahiro Harada, Kiyoshi Yamamoto
  • Patent number: 5227363
    Abstract: A method makes a superconducting oxide thin film by irradiating an oxygen radical beam with necessary elements of the compound onto a substrate mounted in a molecular beam epitaxy system. The process can selectively form the superconducting oxide thin film on the substrate more efficiently in a direct reaction manner while maintaining the vacuum chamber of the molecular beam epitaxy system at a higher vacuum level.
    Type: Grant
    Filed: February 19, 1992
    Date of Patent: July 13, 1993
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hiroaki Furukawa, Masao Nakao
  • Patent number: 5225398
    Abstract: A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.
    Type: Grant
    Filed: March 26, 1992
    Date of Patent: July 6, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hidenori Nakanishi, Shin-ichi Shikata, Itozaki Hideo
  • Patent number: 5225394
    Abstract: A superconducting pattern formed from a superconducting ceramic film is illustrated. The pattern is made in the form of a coil which is embedded in an insulating ceramic film. The insulating film is made of a ceramic material whose thermal expansion coefficient is approximately equal to that of the coil.
    Type: Grant
    Filed: September 12, 1991
    Date of Patent: July 6, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5225396
    Abstract: A method for forming an oxide superconducting film is disclosed. A substrate member comprising an oxygen ion conductor and a material provided thereon having oxygen permeability and good fitting of lattice constant to the oxide superconducting film is prepared, and then an oxide superconducting film is formed on the substrate member. During the formation of the superconducting film, electric current is made to flow through the substrate member, whereby oxygen is supplied to the superconducting film.
    Type: Grant
    Filed: July 24, 1991
    Date of Patent: July 6, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisashi Ohtani
  • Patent number: 5221661
    Abstract: A method is provided for depositing a dense, high quality, superconducting coating on a substrate of large size and complex shape. The superconducting coating is deposited from a precursor melt that generally comprises the same constituents as the superconducting coating but not necessarily in the same proportions. The liquid precursor melt, which may bear suspended platelike crystals of the superconducting phase, flows into or through a smooth, fine-grained, porous substrate that is largely inert to the liquid precursor. The desired superconducting phase is the sole crystalline phase co-existing with the precursor melt over a range of conditions. The crystals have a pronounced platelike character and form on the substrate with their superconducting planes oriented parallel to the surfaces of the substrate.
    Type: Grant
    Filed: November 19, 1990
    Date of Patent: June 22, 1993
    Assignee: Rockwell International Corporation
    Inventor: Robert M. Housley
  • Patent number: 5221663
    Abstract: A method for producing an oxide superconducting connecting line includes initially coating a line with at least one layer of a crystalline or amorphous metal alloy forming a superconductive oxide. The line is subsequently heated to a temperature below the melting temperature of the oxide. A gas containing oxygen is simultaneously brought into contact with the accessible surface forming an oxide film which is superconductive upon cooling. When the oxide film is damaged at a certain location, the still-undamaged layer is exposed to the oxygen-containing gas and the line is heated at the damaged location. A superconducting film is again formed. A combination superconducting connecting line and an apparatus for producing the superconducting connecting line is also disclosed.
    Type: Grant
    Filed: July 16, 1991
    Date of Patent: June 22, 1993
    Assignee: Siemens Aktiengesellschaft
    Inventor: Helmut Assmann
  • Patent number: 5219830
    Abstract: A process for preparing high-Tc superconducting integrated circuits by using a method in which a thin surface layer of non-superconducting tetragonal YBa.sub.2 Cu.sub.3 Oy wafer is selectively transformed into a superconducting orthorhombic phase by oxygen-diffusion. The superconducting orthorhombic islands are surrounded with non-superconducting tetragonal phases and these are electrically isolated from each other. The process results in the formation of superconducting integrated circuits which are inexpensive and are high in quality.
    Type: Grant
    Filed: July 15, 1991
    Date of Patent: June 15, 1993
    Assignee: Samsung Electro-Mechanics
    Inventors: Ju Y. Jeong, Song I. H., Seok Y. Yoon, Sang C. Park
  • Patent number: 5217943
    Abstract: A high temperature superconducting wire and an improved process of making the same wherein a metal wire chosen from the group consisting of: Y; Sm; Eu; Gd; Dy; Ho; Er; Tm; Yb; and Lu is oxidized and the oxidized metal wire is then coated with molten barium-copper-oxide. The process allows high-quality superconducting wire to be easily and continuously fabricated.
    Type: Grant
    Filed: January 25, 1989
    Date of Patent: June 8, 1993
    Assignee: The University of Arkansas
    Inventors: Allen M. Hermann, Zhengzhi Sheng, Q. A. Shams
  • Patent number: 5215242
    Abstract: Superconducting joints between superconducting tape ends are produced by a series of operations which includes stripping non-superconductive material from the tape ends, joining them with a conductive coating and depositing a superconductive alloy layer thereon, typically of triniobium tin, by a chemical vapor deposition reaction of hydrogen with the corresponding metal halides. Certain of the steps are performed in an inert atmosphere free from moisture, elemental hydrogen and elemental oxygen, typically a helium atmosphere.
    Type: Grant
    Filed: December 6, 1991
    Date of Patent: June 1, 1993
    Assignee: General Electric Company
    Inventors: Philip G. Kosky, Herbert C. Peters, Daniel S. McAtee, Clifford L. Spiro
  • Patent number: 5215960
    Abstract: In a method of manufacturing a superconducting device which has a first thin film of oxide superconductor material formed on a substrate and a second thin film formed on the first thin film of oxide superconductor material, after the second thin film is deposited on the first thin film of oxide superconductor material, a multi-layer structure formed of the first and second thin films is patterned so that a side surface of the first thin film is exposed. In this condition, the whole of the substrate is heated in an O.sub.2 atmosphere or in an O.sub.3 atmosphere so that oxygen is entrapped into the first thin film of oxide superconductor material. Thereafter, the patterned multi-layer structure is preferably covered with a protection coating.
    Type: Grant
    Filed: July 16, 1991
    Date of Patent: June 1, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Sou Tanaka, Mitsuchika Saitoh, Michitomo Iiyama
  • Patent number: 5214025
    Abstract: Monatomic layers each formed of a single metal are sequentially formed on a substrate using a molecular-beam epitaxy to form a multilayered metal film consisting of a plurality of types of metals, and sequentially with formation the monatomic layers, nitrogen dioxide gas as an oxidizer is supplied to oxidize the multilayered metal film. The same operation is repeatedly performed a predetermined number of times to form an oxide high-temperature superconductor thin film having a predetermined thickness.
    Type: Grant
    Filed: March 3, 1992
    Date of Patent: May 25, 1993
    Assignee: President of Tokyo Institute of Technology
    Inventors: Maki Kawai, Shunji Watanabe
  • Patent number: 5212152
    Abstract: A method of treating an oxide superconductor to prevent degradation thereof comprises treating the superconductor with a solution of a metal which is capable of being oxidized by the superconductor to form on those regions of the surface area of the superconductor treated with the solution an insulating, non-porous protective film of an oxide which is stable against further oxidation.
    Type: Grant
    Filed: August 16, 1991
    Date of Patent: May 18, 1993
    Assignee: British Technology Group Limited
    Inventors: Stuart B. Lyon, Beverley J. Hepburn
  • Patent number: 5212147
    Abstract: A method of forming a patterned in-situ photoconductive film on a substrate including providing a patterned photoresist layer on upper and lower metallic layers formed on a substrate. The patterned photoresist layer is used to form an opening in the upper layer. The pattern in the upper layer thereby has an opening having a geometry substantially similar to a desired pattern of photoconductive material to be formed on the substrate. A portion of the lower layer is removed to form cantilevered regions of the upper layer adjacent to the opening. Superconductive material is then deposited on the substrate by directing the material through the opening at an angle generally perpendicular to the substrate. The superconductive film on the substrate within the lower layer is coated with a polymer. The upper and lower layers and all superconductive material on those layers are removed to leave the polymer-encapsulated superconductive material on the substrate.
    Type: Grant
    Filed: May 15, 1991
    Date of Patent: May 18, 1993
    Assignee: Hewlett-Packard Company
    Inventor: James R. Sheats
  • Patent number: 5212151
    Abstract: An oxide superconducting thin film formed by laser ablation comprises a matrix formed of c-axis oriented superconducting phases and foreign phases which are different in crystal orientation from the matrix. In order to improve critical current density of the oxide superconducting thin film, preferably selected are such conditions that the size of each superconducting phase in its a-b plane is not more than 0.1 .mu.m in diameter, the size of each superconducting phase along its c-axis direction is equal to the thickness of the oxide superconducting thin film, the foreign phases at least partially pass through the oxide superconducting thin film along the direction of thickness, the size of each foreign phase is at least 0.01 .mu.m and not more than 5 .mu.m in diameter, each foreign phase has an a-axis or a c-axis perpendicularly oriented with respect to the major surface of the oxide superconducting thin film, and the like.
    Type: Grant
    Filed: December 7, 1990
    Date of Patent: May 18, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Satoshi Takano, Shigeru Okuda, Noriyuki Yoshida, Tsukushi Hara, Kiyoshi Okaniwa, Takahiko Yamamoto
  • Patent number: 5212148
    Abstract: A method of manufacturing a layer of a superconducting high-T.sub.c -material. For this purpose, an appropriate target material is deposited on a predetermined substrate by a pulsed laser with a wavelength in the ultraviolet range and, by applying a heat treatment and an oxygen treatment, the desired superconducting metal-oxide phase is formed with an ordered crystal structure. The heat treatment and oxygen treatment are performed simultaneously during the vaporizing step, whereby a power density of the laser radiation of over 3 J/cm.sup.2 at the target material is provided, the pulse power of the laser is at least 1.5 J/pulse, the temperature of the substrate is raised to 600.degree. C. to 800.degree. C., and an oxygen atmosphere of between 0.02 mbar and 1 mbar is provided.
    Type: Grant
    Filed: May 3, 1989
    Date of Patent: May 18, 1993
    Assignee: Siemens Aktiengesellschaft
    Inventors: Bernhard Roas, Gerhard Endres, Ludwig Schultz
  • Patent number: 5210070
    Abstract: A process of preparing a superconducting thin oxide film includes irradiating a target containing Bi, Sr, Ca and Cu with a laser beam to prepare a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x oxide or a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.y oxide on a substrate. The process is characterized in that the target containing Bi, Sr, Ca and Cu in an atomic ratio of 2:2:2:3 is positioned to face the substrate, and the laser beam is irradiated to the target in an atmosphere having an oxygen partial pressure of 0.01-1 Torr while the temperature of the substrate is maintained in a given temperature range suitable for growing the respective superconducting thin oxide films.
    Type: Grant
    Filed: November 14, 1991
    Date of Patent: May 11, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tatsuoki Nagaishi, Hisao Hattori, Hideo Itozaki
  • Patent number: 5206213
    Abstract: A process for the preparation of oriented, ceramic oxides from a bilayer structure of a polycrystalline superconducting ceramic oxide and a second ceramic oxide material having a lower melting point than the superconducting ceramic oxide. The process comprises the steps of preparing a substrate, depositing the superconducting ceramic oxide and second ceramic oxide in alternate layers, and heat treating the resulting composite structure to obtain an oriented structure whereby the c-axes of the unit cells of the crystallites are predominantly normal to the surface of the substrate.
    Type: Grant
    Filed: March 23, 1990
    Date of Patent: April 27, 1993
    Assignee: International Business Machines Corp.
    Inventors: Jerome J. Cuomo, Charles R. Guarnieri, Eugene S. Machlin, Ronnen A. Roy, Dennis S. Yee
  • Patent number: 5206216
    Abstract: Disclosed herein is a method of and an apparatus for fabricating an oxide superconducting wire which comprises a tape-type long base material and an oxide superconducting film formed thereon. The oxide superconducting film is formed by laser ablation of applying a laser beam (2) onto a target (4) while translating a long base material (6) along its longitudinal direction and depositing atoms and/or molecules scattered from the target (4) on the base material (6).
    Type: Grant
    Filed: September 16, 1991
    Date of Patent: April 27, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Noriyuki Yoshida
  • Patent number: 5206212
    Abstract: A laser beam (2) is applied to a target (1) of an oxide superconductive material, to deposit atoms and/or molecules which are scattered from the target (1) on a first portion (4) of a substrate (3) under an atmosphere containing oxygen for a start. Then, the substrate (3) is moved to deposit atoms and/or molecules scattered from the target (10) on a second portion, which is different form the first portion (4) of the substrate (3), under the atmosphere containing oxygen. At this time, the first portion (4) is subjected to oxygen annealing. These deposition steps are repeated until an oxide superconducting film of a desired thickness is obtained.
    Type: Grant
    Filed: January 9, 1992
    Date of Patent: April 27, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Shigeru Okuda
  • Patent number: 5204313
    Abstract: A process of forming on a gold, silver or platinum metal surface of a substrate a superconductive crystalline mixed metal oxide thin film exhibiting superconductivity at a temperature in excess of 85.degree. K. A precursor of the superconductive thin film containing bismuth, strontium, calcium and copper is formed on the substrate surface and then thermally converted in the presence of oxygen to the superconductive thin film. Lead is added to the thin film precursor to raise the superconductivity of the completed thin film above 85.degree. K.
    Type: Grant
    Filed: October 10, 1999
    Date of Patent: April 20, 1993
    Assignee: Eastman Kodak Company
    Inventors: Mark Lelental, Henry J. Romanofsky
  • Patent number: 5204314
    Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comGOVERNMENT RIGHTS IN INVENTIONThis invention was made with Government support under Contract No. N00014 88-0531 awarded by the Defense Advanced Projects Research Administration (DARPA). The Government has certain rights in this invention.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: April 20, 1993
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter S. Kirlin, Robin L. Binder, Robin A. Gardiner
  • Patent number: 5204318
    Abstract: A method of preparing a superconducting oxide by combining the metallic elements of the oxide to form an alloy, followed by oxidation of the alloy to form the oxide. Superconducting oxide-metal composites are prepared in which a noble metal phase intimately mixed with the oxide phase results in improved mechanical properties. The superconducting oxides and oxide-metal composites are provided in a variety of useful forms.
    Type: Grant
    Filed: June 10, 1987
    Date of Patent: April 20, 1993
    Assignee: Massachusetts Institute of Technology
    Inventors: Gregory J. Yurek, John B. VanderSande
  • Patent number: 5202308
    Abstract: The present invention relates to a sintered ceramic superconducting wire which is made by placing powders of metal oxides or a mixture of powders of metal oxides and metal carbonates, said oxides and said carbonates each having an oxidation potential higher than or equal to that of copper, in a metallic cylinder formed from a high temperature oxidation-resistant material, and drawing the packed cylinder to a final size and sintering said drawn packed cylinder in air, wherein said cylinder is removed prior or subsequent to the final step of sintering.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: April 13, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Susumu Yamamoto, Nozomu Kawabe, Teruyuki Murai
  • Patent number: 5200388
    Abstract: An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.
    Type: Grant
    Filed: June 22, 1990
    Date of Patent: April 6, 1993
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Hitoshi Abe, Tomohiro Nakamori
  • Patent number: 5200389
    Abstract: A method for manufacturing a superconducting article, comprising the steps of: forming a first layer comprising a mixture of LnBa.sub.2 Cu.sub.3 O.sub.x and Ln.sub.2 BaCuO.sub.x ' on the surface of a substrate, said Ln being an optional rare earth element; then forming a second layer comprising a mixture of at least CuO and BaCuO.sub.2 on the surface of the first layer; and then melting the mixture in the second layer to cause the resultant melt of the mixture in the second layer to diffusion-react with Ln.sub.2 BaCuO.sub.x ' in the first layer so as to convert the first and second layers into a film of a superconducting substance comprising LnBa.sub.2 Cu.sub.3 O.sub.x ; thereby manufacturing a superconducting article comprising the substrate and the film of the superconducting substance formed on the surface of the substrate.
    Type: Grant
    Filed: October 25, 1991
    Date of Patent: April 6, 1993
    Assignees: The Tokai University Juridicial Foundation, NKK Corporation
    Inventors: Kyoji Tachikawa, Yukio Shinbo, Moriaki Ono, Shigeyoshi Kosuge, Makoto Kabasawa
  • Patent number: 5200370
    Abstract: Monocrystalline ceramic fibers are disclosed together with a process for preparing such fibers. Polycrystalline ceramic fibers in a tow are coated with a coating that is chemically substantially non-reactive with the ceramic (e.g. alumina fibers coated with molybdenum), and the coated fibers are drawn through a heating zone maintained at a temperature high enough to melt the fibers without melting the coating. The coated fibers are withdrawn from the heating zone and cooled rapidly enough to form a substantially monocrystalline ceramic. The protective coating may thereafter be removed to leave a tow of substantially single-crystal ceramic fibers. Monocrystalline ceramic fibers about 8-20 microns in diameter are prepared by the disclosed process.
    Type: Grant
    Filed: November 16, 1990
    Date of Patent: April 6, 1993
    Assignee: Fiber Materials, Inc.
    Inventors: James R. Lennox, Roger T. Pepper, Paul V. Chayka
  • Patent number: 5198412
    Abstract: A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precursor elements on a substrate; 2) patterning the metal film; and 3) oxidizing the metal film to form a superconductor film. Because the process separates the metal precursor film formation, patterning, and oxidation steps, each of the steps can be individually optimized.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: March 30, 1993
    Assignee: Hewlett-Packard Company
    Inventors: V. K. Nagesh, John T. Anderson
  • Patent number: 5198413
    Abstract: An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.
    Type: Grant
    Filed: November 13, 1991
    Date of Patent: March 30, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Yoshinobu Tarutani, Ushio Kawabe
  • Patent number: 5198414
    Abstract: A laser ablation method for forming a fluorinated superconducting Y-Ba-Cu-O thin film on a sapphire substrate is disclosed, which comprises the steps of: (1) depositing a barrier layer of BaAl.sub.2 O.sub.4 on the sapphire substrate; (2) placing the coated substrate and a tagret in a deposition chamber, said target including fluorine, barium, yttrium, copper and oxygen; (3) providing a background atmosphere including at least partial pressure of O.sub.2 within the chamber; (4) heating the coated substrate to a temperature above ambient; (5) laser-ablating the target material onto the heated substrate while controlling the partial pressure of O.sub.2 in said background atmosphere and the temperature of said heated substrate so that the as-deposited thin film on said substrate is superconductive.
    Type: Grant
    Filed: October 1, 1991
    Date of Patent: March 30, 1993
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Rosa Young, Gerard Van der Leeden, Benjamin S. Chao
  • Patent number: H1170
    Abstract: The invention relates to volatile mixed metal alkoxides of the formula M'.sub.x M.sub.y Cu.sub.z (OR).sub.x+2(y+z) wherein M is selected from the group consisting of Ba, Sr, and Ca, M' is an alkali metal, x=0-6, y=0-4 and z=1 to 6, and x and y are not 0 at the same time, and R is selected from the group consisting of CMe.sub.3, CMe.sub.2 Et, CMeEt.sub.2, CMe.sub.2 Pr, CMeEtPr, CEt.sub.3 or combinations of these substituents. Volatile alkoxides of Y and Cu are known. These volatile alkoxides can be used in a CVD process where stoichiometric quantities of the material are sublimated, transported to a substrate and decomposed to an oxide with or without the presence of oxygen. The oxides are then treated in a known manner to produce the superconducting film.
    Type: Grant
    Filed: July 31, 1989
    Date of Patent: April 6, 1993
    Assignee: United States of America
    Inventor: Andrew Purdy