Superconductor Patents (Class 427/62)
  • Patent number: 7189425
    Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.
    Type: Grant
    Filed: February 20, 2004
    Date of Patent: March 13, 2007
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Won nam Kang, Sung-ik Lee, Eun-mi Choi, Hyeong-jin Kim
  • Patent number: 7175735
    Abstract: Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: February 13, 2007
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Chan Park, Do-Jun Youm, Ho-Sup Kim, Kook-Chae Chung, Byung-Su Lee, Sun-Me Lim, Hyoung-Joon Kim
  • Patent number: 7090889
    Abstract: Boride thin films of conducting and superconducting materials are formed on silicon by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, on silicon substrates by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the silicon substrates.
    Type: Grant
    Filed: February 24, 2004
    Date of Patent: August 15, 2006
    Assignee: The Penn State Research Foundation
    Inventors: Zi-Kui Liu, Zhi-Jie Liu, Xiaoxing Xi
  • Patent number: 7048840
    Abstract: The invention relates to a method for metal coating the surface of high temperature superconductors with a copper-oxygen base structure. The aim of the invention is to achieve a method as above, which requires a low production complexity, serves for the production of contacts with a low electrical and/or thermal transfer resistance and which increases the stability of the metallization. Said aim is achieved whereby copper is applied to give low-ohmic contacts, and the linked achievement of a stable metallization between the HTS and the electrical and/or thermal coupling. Further advantageous effects are achieved with the method whereby the copper is applied in the form of copper alloys, in particular as copper-nickel or copper-zinc alloys. On applying the method it is furthermore of advantage for the creation of fine grained surface coatings to overlay the galvanic cell with a permanent and/or alternating magnetic field.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: May 23, 2006
    Assignee: Adelwitz Technologiezentrum GmbH
    Inventors: Frank Werfel, Uta Flögel-Delor, Rolf Rothfeld, Dieter Wippich
  • Patent number: 7033568
    Abstract: A palladium hydride superconductor, PdyHx where yHx is 1Hx, 2Hx, or 3Hx, having a critical temperature Tc?11K and stoichiometric ratio x?1. The critical temperature is proportional to a power of the stoichiometric ratio, which is stable over periods exceeding 24 hours, temperature variations from 4K to 400K, and pressures down to 1 mbar. The palladium hydride is coated with a stabilizing material such as a metal, metal oxide, ceramic, or polymer that can bond to palladium. It can be made by electrochemically loading a palladium lattice with isotopic hydrogen in an electrolytic solution, by allowing isotopic hydrogen to diffuse into a palladium thin film in a pressure chamber, or by injecting isotopic hydrogen into a palladium thin film in a vacuum chamber. The stabilizing material can be electrochemically bonded to the surface of the palladium hydride, or deposited using chemical vapor deposition or molecular beam epitaxy.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: April 25, 2006
    Inventor: Paolo Tripodi
  • Patent number: 7033637
    Abstract: Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein.
    Type: Grant
    Filed: January 12, 2000
    Date of Patent: April 25, 2006
    Assignee: MicroCoating Technologies, Inc.
    Inventors: Andrew Tye Hunt, Girish Deshpande, Wen-Yi Lin, Tzyy-Jiuan Jan
  • Patent number: 7008669
    Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: March 7, 2006
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Takeshi Kijima, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7001870
    Abstract: The present invention provides a method for joining an RE123 oxide superconductor matrix obtained by a melt process by the use of a solder material. The (110) plane of an RE123 oxide superconductor matrix obtained by a melt process is used as the plane to be joined, a solder material composed of an RE123 oxide superconductor having a lower melting point than the above-mentioned RE123 oxide superconductor is interposed between the planes to be joined, and this solder material is melted and then solidified to form a joining layer, thereby joining the matrices. The solder material can be a sinter, a melt-processed material, a powder, a slurry, or a molded powder.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: February 21, 2006
    Assignee: International Superconductivity Technology Center, The Juridical Foundation
    Inventors: Kazumasa Iida, Junko Yoshioka, Naomichi Sakai, Masato Murakami
  • Patent number: 6998028
    Abstract: A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0 m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: February 14, 2006
    Assignee: Superpower, Inc.
    Inventor: Venkat Selvamanickam
  • Patent number: 6982240
    Abstract: A superconducting device operable at temperatures in excess of 30° K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high Tc superconducting material, the SQUID device being operable at temperatures in excess of 60° K. High energy beams, for example ion beams, are used to convert selected portions of the high Tc superconductor to nonsuperconductive properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.
    Type: Grant
    Filed: May 9, 1991
    Date of Patent: January 3, 2006
    Assignee: International Business Machines Corporation
    Inventors: Gregory John Clark, Richard Joseph Gambino, Roger Hilsen Koch, Robert Benjamin Laibowitz, Allan David Marwick, Corwin Paul Umbach
  • Patent number: 6974501
    Abstract: The invention relates to multi-layer articles and methods of making such articles. The methods include first conditioning the surface of an underlying layer, such as a buffer layer or a superconductor layer, then disposing a layer of material on the conditioned surface. The conditioned surface can be a high quality surface. Superconductor articles formed by these methods can exhibit relatively high critical current densities.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: December 13, 2005
    Assignee: American Superconductor Corporation
    Inventors: Wei Zhang, Martin W. Rupich, Suresh Annavarapu, Leslie G. Fritzemeier, Edward J. Siegal, Valery Prunier, Qi Li
  • Patent number: 6956012
    Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.
    Type: Grant
    Filed: April 24, 2003
    Date of Patent: October 18, 2005
    Assignee: UT-Battelle, LLC
    Inventors: M. Parans Paranthaman, Tolga Aytug, David K. Christen
  • Patent number: 6949490
    Abstract: High-Tc superconducting ceramic oxide products and macroscopic and microscopic methods for making such high-Tc superconducting products. Completely sealed high-Tc superconducting ceramic oxide provides are made by a macroscopic process including the steps of pressing a superconducting ceramic oxide powder into a hollow body of a material inert to oxygen; heat treating the superconducting ceramic oxide powder packed body under conditions sufficient to sinter the ceramic oxide powder; and then sealing any openings of the body. Optionally, a waveform or multiple pulses of alternate magnetic filed can be applied during the heat treatment.
    Type: Grant
    Filed: June 9, 2003
    Date of Patent: September 27, 2005
    Inventor: Dawei Zhou
  • Patent number: 6929820
    Abstract: A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.
    Type: Grant
    Filed: September 9, 2002
    Date of Patent: August 16, 2005
    Assignee: National Institute of Information and Communications Technology
    Inventors: Hisashi Shimakage, Atsushi Saito, Akira Kawakami, Zhen Wang
  • Patent number: 6926921
    Abstract: One aspect of this disclosure relates to a method of building a superconductor device on a substrate, comprising depositing an imprint layer on at least a portion of the substrate. The imprint layer is imprinted to provide an imprinted portion of the imprint layer and a non-imprinted portion of the imprint layer. A superconductor layer is deposited on at least a portion of the imprinted portion of the imprint layer.
    Type: Grant
    Filed: May 5, 2003
    Date of Patent: August 9, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: James Stasiak, Pavel Kornilovich
  • Patent number: 6921445
    Abstract: A method involves sheathing a superconductor with a thermoplastic insulation material on all sides. The conductor exits a guide channel that extends in the propulsion direction. A melt hose is extruded from the molten insulation material in the propulsion direction and through a nozzle that has an outlet which embraces the conductor, whereby a distance is kept on all sides. The melt hose is stretched via the propulsion of the conductor. The hose is drawn to the surface of the conductor and is compacted by cooling. The method can especially be used for sheathing band-shaped high-Tc-superconductors. Materials having processing temperatures between 200° C. and 450° C., are selected as thermoplastic insulation materials.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: July 26, 2005
    Assignee: Siemens Aktiengesellschaft
    Inventors: Cord Albrecht, Robert Greiner, Peter Kummeth, Peter Massek, Manfred Ochsenkühn
  • Patent number: 6863752
    Abstract: A method and article for producing a high transition temperature superconducting tape or wire with a normal metal sheath and at least two surface layers, an inner electrically insulating layer and an outer low friction layer. The method includes mechanical deformation and a plurality of annealing steps, and the application of at least one surface layer after the final annealing step. The coating materials are selected based on their electrical insulation and friction, as well as their compatibility with cryogenic conditions and coating methods.
    Type: Grant
    Filed: November 29, 1999
    Date of Patent: March 8, 2005
    Assignee: American Superconductor Corporation
    Inventor: Zhenghe Han
  • Patent number: 6830775
    Abstract: The method of manufacturing a superconducting quantum interference type magnetic fluxmeter including forming an input coil and a pickup coil integrated with the input coil by electrophoretically depositing high-temperature superconducting fine particles on a surface of the first cylindrical ceramic substrate, and sintering the fine particles, forming a high-temperature superconductor magnetic shield tube by electrophoretically depositing high-temperature superconducting fine particles on an entire surface of the second cylindrical ceramic substrate, and sintering the fine particles, magnetically coupling the input coil and the high-temperature superconducting quantum interference type element by placing the pickup coil such that a distal end portion thereof is inserted within a lower end portion of the magnetic shield tube and inserting the high-temperature superconducting quantum interference type element from an upper end portion of the magnetic shield tube.
    Type: Grant
    Filed: November 7, 2003
    Date of Patent: December 14, 2004
    Assignee: Japan Science and Technology Agency
    Inventors: Masaharu Kawachi, Masahito Yoshizawa, Nobuyoshi Sato
  • Publication number: 20040247780
    Abstract: An ion source impinging on the surface of the substrate to be coated is used to enhance a MOCVD, PVD or other process for the preparation of superconducting materials.
    Type: Application
    Filed: June 5, 2003
    Publication date: December 9, 2004
    Inventors: Venkat Selvamanickam, Hee-Gyoun Lee
  • Publication number: 20040247779
    Abstract: The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.
    Type: Application
    Filed: June 5, 2003
    Publication date: December 9, 2004
    Inventors: Venkat Selvamanickam, Hee-Gyoun Lee
  • Publication number: 20040234680
    Abstract: The method of manufacturing a superconducting quantum interference type magnetic fluxmeter including forming an input coil and a pickup coil integrated with the input coil by electrophoretically depositing high-temperature superconducting fine particles on a surface of the first cylindrical ceramic substrate, and sintering the fine particles, forming a high-temperature superconductor magnetic shield tube by electrophoretically depositing high-temperature superconducting fine particles on an entire surface of the second cylindrical ceramic substrate, and sintering the fine particles, magnetically coupling the input coil and the high-temperature superconducting quantum interference type element by placing the pickup coil such that a distal end portion thereof is inserted within a lower end portion of the magnetic shield tube and inserting the high-temperature superconducting quantum interference type element from an upper end portion of the magnetic shield tube.
    Type: Application
    Filed: November 7, 2003
    Publication date: November 25, 2004
    Inventors: Masaharu Kawachi, Masahito Yoshizawa, Nobuyoshi Sato
  • Patent number: 6821930
    Abstract: An aqueous solution of mixed metal acetate including one kind or more of element selected from lanthanide series and yttrium, barium and copper is mixed with trifluoroacetic acid to prepare a solution of mixed metal trifluoroacetate. From a solution of mixed metal trifluoroacetate obtained thus, purified mixed metal trifluoroacetate of which total content of water and acetic acid is 2% by weight or less is prepared. With purified mixed metal trifluoroacetate, an oxide superconductor of excellent performance may be prepared.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: November 23, 2004
    Assignees: Kabushiki Kaisha Toshiba, International Superconductivity Technology Center
    Inventors: Takeshi Araki, Katsuya Yamagiwa, Izumi Hirabayashi
  • Patent number: 6809042
    Abstract: The present invention provides an oxide superconductor thick film which is formed on a substrate or a board and has a high Jc and Ic and a method for manufacturing the same. Predetermined amounts of materials containing elements of Bi, Pb, Sr, Ca and Cu are weighed, mixed and subjected to steps of calcining, milling, and drying, and thereafter an organic binder and an organic vehicle are added thereto to prepare a (Bi, Pb)2+aSr2Ca2Cu3Oz, superconductive paste, which is applied to the surface of a substrate or a board in a thickness of 260 &mgr;m or more and dried. Thereafter, the paste is first subjected to burning at temperatures of 835° C. to 840° C. for 100 hours, then pressurization, and further burning at temperatures of 835° C. to 840° C. for 100 hours, thereby preparing an oxide superconductor thick film having a film thickness of 130 &mgr;m or more having a high Jc and Ic.
    Type: Grant
    Filed: August 26, 2002
    Date of Patent: October 26, 2004
    Assignees: Dowa Mining Co., Ltd., Central Research Institute of Electric Power Industry
    Inventors: Masahiro Kojima, Masakazu Kawahara, Michiharu Ichikawa, Hiroyuki Kado, Masatoyo Shibuya
  • Patent number: 6800321
    Abstract: Methods for reducing hysteresis losses in superconductor coated ribbons where a flux distribution is set into the superconductor coated ribbon prior to the application of alternating current.
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: October 5, 2004
    Assignee: The Regents of the University of California
    Inventor: Stephen P. Ashworth
  • Patent number: 6797313
    Abstract: Superconductor reactors, methods and systems are disclosed.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: September 28, 2004
    Assignee: American Superconductor Corporation
    Inventors: Leslie G. Fritzemeier, Darren T. Verebelyi, Martin W. Rupich, Wei Zhang, Qi Li, Xiaoping Li
  • Patent number: 6797341
    Abstract: Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: September 28, 2004
    Assignee: Penn State Research Foundation
    Inventors: Xianghui Zeng, Alexej Pogrebnyakov, Xiaoxing Xi, Joan M. Redwing, Zi-Kui Liu, Darrell G. Schlom
  • Patent number: 6794339
    Abstract: The present invention is a method of forming thick films of crystalline YBa2Cu3O7 that includes forming a precursor film comprising barium fluoride (BaF2), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500° C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500° C. in the presence of oxygen to form the crystalline YBa2Cu3O7 film. The YBa2Cu3O7 film formed by this method has a resistivity of from about 100 to about 600 &mgr;Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1.0×105 Ampere per square centimeter (0.1 MA/cm2) or greater.
    Type: Grant
    Filed: September 12, 2001
    Date of Patent: September 21, 2004
    Assignee: Brookhaven Science Associates
    Inventors: Harold Wiesmann, Vyacheslav Solovyov
  • Patent number: 6787181
    Abstract: A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650° C. or higher are used.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: September 7, 2004
    Assignees: Symetrix Corporation, Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiyoshi Uchiyama, Narayan Solayappan, Carlos A. Paz de Araujo
  • Patent number: 6774088
    Abstract: A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: August 10, 2004
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Takaaki Manabe, Iwao Yamaguchi, Tetsuo Tsuchiya, Toshiya Kumagai, Susumu Mizuta, Susumu Nakamura
  • Patent number: 6743531
    Abstract: The object of the present invention is to provide an oxide superconducting conductor having superior strength and superconductor characteristics, and its production method.
    Type: Grant
    Filed: June 19, 2002
    Date of Patent: June 1, 2004
    Assignees: Fujikura Ltd., Chubu Electric Power Company Incorporated
    Inventors: Kazunori Onabe, Takashi Saito, Naoji Kashima, Shigeo Nagaya
  • Patent number: 6743533
    Abstract: An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.
    Type: Grant
    Filed: December 11, 2001
    Date of Patent: June 1, 2004
    Assignees: Fujikura Ltd., Tokyo Electric Power Company, Inc., Railway Technical Research Institute, Sumitomo Electric Industries, Ltd., International Superconductivity Technology Center
    Inventors: Kazuomi Kakimoto, Natsuro Hobara, Teruo Izumi, Yuh Shiohara, Yuichi Nakamura, Kazuya Ohmatsu, Koso Fujino
  • Patent number: 6740259
    Abstract: A method of manufacture of a ceramic material comprises the steps of preparing a melt of the ceramic materials, cooling the melt slowly through the freezing point of the material to initiate solidification, holding the melt at a temperature below the freezing point of the material whilst solidification progresses and characterised in that during solidification an ultrasonic field is applied to the melt. The melt composition may be selected to include an excess of one or more ceramic materials so as to produce a second phase dispersed in the solidified product during solidification. Also claimed is a ceramic material produced by the method described. The ceramic material may be a superconductor.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: May 25, 2004
    Assignee: Qinetiq Limited
    Inventors: Jonathan C Fitzmaurice, David R Moore
  • Patent number: 6740624
    Abstract: A method and an apparatus for spraying materials onto a substrate to produce a coating thereon is described which allows very thick layers of complex metal oxides to be produced. The apparatus and method are particularly suitable for producing superconducting coatings.
    Type: Grant
    Filed: January 29, 2001
    Date of Patent: May 25, 2004
    Assignee: Universiteit Gent
    Inventors: Serge Hoste, Frans Persyn, Isabel Van Driessche
  • Patent number: 6716796
    Abstract: A polycrystalline thin film B consisting mainly of oxide crystal grains 20 which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y2O3, Sc2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Yb2O3, Lu2O3, and Pm2O3 formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: April 6, 2004
    Assignees: Fujikura Ltd, International Superconductivity, Technology Center, The Juridical Foundation
    Inventors: Yasuhiro Iijima, Mariko Kimura, Takashi Saito
  • Patent number: 6673387
    Abstract: A process is described for formation of oxide films independent of thickness from precursor films comprising metals, metal oxides, and metal fluorides with properties and structures similar to those previously only obtained in thin films, for example less than about 0.4 microns.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: January 6, 2004
    Assignee: American Superconductor Corporation
    Inventors: Wei Zhang, Qi Li, Martin W. Rupich
  • Patent number: 6638568
    Abstract: A method of curing cracks in a ceramic shaped body made from ceramic magnet materials or ceramic superconductor materials, in which a filling material which melts at a lower temperature than the material of the shaped body or is flowable at a lower temperature than the material of the shaped body is applied to the surface of the shaped body at least in the area of a crack and/or is introduced into at least one crack, in which the shaped body with the filling material is heated to and maintained at a temperature at which the material of the shaped body does not yet melt or is not yet flowable, but at which the filling material is in at least partially molten and flowable state at least until the fused filling material can penetrate at least partially into the crack, in which the filling material consists of non-metallic or essentially of non-metallic compounds and is at least partially crystallized, and in which the shaped body with the filling material is cooled, wherein the thermal crystallization conditions
    Type: Grant
    Filed: July 31, 2001
    Date of Patent: October 28, 2003
    Assignee: Nexans Superconductors GmbH
    Inventors: Michael Baecker, Joachim Bock, Herbert C. Freyhardt, Andreas Leenders, Heribert Walter, Martin Ullrich
  • Publication number: 20030197155
    Abstract: The objective of this invention is to provide a mercury-containing copper oxide superconductor film with a large area and a reduced amount of hetero-phase precipitate as an impurity, as well as an apparatus and a process for safely producing the film in a large scale; for this purpose, an apparatus for forming a film of this invention comprises a pressure vessel 1 (pressurized atmosphere furnace) equipped with a port 11 for introducing an external gas atmosphere to the furnace wall 3 and a mercury feeder 10 for controlling a pressure of the gas atmosphere independently of the pressure vessel 1 by generating a mercury-containing gas, the mercury feeder 10 introduces a mercury-containing gas into the pressure vessel 1 via the port 11, and, there is a metal seal gate valve 16 between the pressure vessel 1 and the mercury feeder 10.
    Type: Application
    Filed: July 9, 2002
    Publication date: October 23, 2003
    Applicant: NEC Corporation
    Inventor: Wataru Hattori
  • Patent number: 6632539
    Abstract: The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30°.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: October 14, 2003
    Assignees: Fujikura Ltd., International Superconductivity Technology Center,
    Inventors: Yasuhiro Iijima, Mariko Kimura, Takashi Saitoh
  • Patent number: 6605569
    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: August 12, 2003
    Assignee: Agency of Industrial Science and Technology Ministry of International Trade and Industry
    Inventors: Hideo Ihara, Shyam Kishore Agarwal
  • Patent number: 6596421
    Abstract: The superconductor structure has a metallic, biaxially textured mount, an intermediate layer system deposited on the mount and including at least two intermediate layers composed of different oxidic materials and, on this, a high-Tc superconducting layer of the M2Cu3Ox type (RE=rare earth; M=alkaline-earth metal). The intermediate layer which faces the mount is composed of Y2O3, and the relatively thinner intermediate layer which faces the superconducting layer is composed of CeO2. The layers are preferably grown heteroepitaxially.
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: July 22, 2003
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wolfgang Schmidt, Gisela Sipos, Bernd Utz
  • Patent number: 6586042
    Abstract: An aqueous solution of mixed metal acetate including one kind or more of element selected from lanthanide series and yttrium, barium and copper is mixed with trifluoroacetic acid to prepare a solution of mixed metal trifluoroacetate. From a solution of mixed metal trifluoroacetate obtained thus, purified mixed metal trifluoroacetate of which total content of water and acetic acid is 2% by weight or less is prepared. With purified mixed metal trifluoroacetate, an oxide superconductor of excellent performance may be prepared.
    Type: Grant
    Filed: September 5, 2001
    Date of Patent: July 1, 2003
    Assignees: Kabushiki Kaisha Toshiba, International Superconductivity Technology Center, Spark Plug Co., Ltd.
    Inventors: Takeshi Araki, Katsuya Yamagiwa, Izumi Hirabayashi
  • Patent number: 6572916
    Abstract: Coatings especially for superconductive strip conductors, as well as methods of applying the coatings, are addressed. Exemplary coatings include aluminum oxide in an aqueous suspension, with aluminum oxide particles contained in the suspension having size typically between 0.5-10 &mgr;m.
    Type: Grant
    Filed: January 4, 2001
    Date of Patent: June 3, 2003
    Assignee: Vacuumschmelze GmbH
    Inventors: Arnold Meyer, Jens Müller, Bernhard Fischer, Stefan Kautz, Bernhard Roas, Helmut Helldörfer
  • Patent number: 6524643
    Abstract: The invention provides a method for preparing a layered structure comprising a lower thin film composed of an oxide superconductor and an upper thin film composed of a material different from the oxide superconductor on a substrate. The lower thin film is deposited by a molecular beam deposition process and the upper thin film is deposited by a process having a deposition rate faster than that of the molecular beam deposition process.
    Type: Grant
    Filed: August 8, 1997
    Date of Patent: February 25, 2003
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takao Nakamura, Michitomo Iiyama
  • Patent number: 6514557
    Abstract: A process to produce magnesium diboride objects from boron objects with a similar form is presented. Boron objects are reacted with magnesium vapor at a predetermined time and temperature to form magnesium diboride objects having a morphology similar to the boron object's original morphology.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: February 4, 2003
    Assignee: Iowa State University Research Foundation
    Inventors: Douglas K. Finnemore, Paul C. Canfield, Sergey L. Bud'ko, Jerome E. Ostenson, Cedomir Petrovic, Charles E. Cunningham, Gerard Lapertot
  • Patent number: 6506439
    Abstract: An apparatus and process for applying a superconductive layer on an elongate substrate that includes moving the elongate substrate through a heating zone, applying a pulsed laser beam against a target, having a length, that is coated with superconductive material wherein particles of superconductive material are separated from the target and strike the elongate substrate with a plasma beam in the heating zone, and oscillating the pulsed laser beam across the target to provide a substantially uniform coating of superconductive material on the elongate substrate.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: January 14, 2003
    Assignee: Zentrum für Funktionswerkstoffe Gemeinnuetzige Gesellschaft mbH
    Inventors: Alexander Usoskin, Herbert Carl Freyhardt, Juergen Knoke
  • Patent number: 6451450
    Abstract: A laminate article consists of a substrate and a biaxially textured protective layer over the substrate. The substrate can be biaxially textured and also have reduced magnetism over the magnetism of Ni. The substrate can be selected from the group consisting of nickel, copper, iron, aluminum, silver and alloys containing any of the foregoing. The protective layer can be selected from the group consisting of gold, silver, platinum, palladium, and nickel and alloys containing any of the foregoing. The protective layer is also non-oxidizable under conditions employed to deposit a desired, subsequent oxide buffer layer. Layers of YBCO, CeO2, YSZ, LaAlO3, SrTiO3, Y2O3, RE2O3, SrRuO3, LaNiO3 and La2ZrO3 can be deposited over the protective layer. A method of forming the laminate article is also disclosed.
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: September 17, 2002
    Assignee: UT-Battelle, LLC
    Inventors: Amit Goyal, Donald M. Kroeger, Mariappan Paranthaman, Dominic F. Lee, Roeland Feenstra, David P. Norton
  • Patent number: 6440904
    Abstract: Ceramic high-temperature superconductors (1) which are intended to be used as current limiters in alternating-current lines should have a bypass layer (2) whose electrical resistivity is increased by more than 10 times with respect to that of a pure noble-metal bypass layer. In order to achieve this, the noble-metal bypass layer (2) of the high-temperature superconductor (1), preferably of silver, is alloyed with a base metal, preferably Pb or Bi or Ga, by a thermal treatment. The ratio of the bypass layer thickness (d2) of the noble-metal bypass layer (2) to the superconductor layer thickness (d1) is adjusted to <1/5. A base-metal bypass layer (3) of steel whose electrical resistivity is in the range between 10 &mgr;&OHgr;×cm and 100 &mgr;&OHgr;×cm at 77 K is soldered on or applied under isostatic pressure over the noble-metal-containing bypass layer (2).
    Type: Grant
    Filed: October 23, 1998
    Date of Patent: August 27, 2002
    Assignee: ABB Research Ltd
    Inventors: Makan Chen, Martin Lakner, Willi Paul
  • Publication number: 20020053662
    Abstract: Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting Tl-containing films (e.g., Tl-1212 or Tl-2212) in an Hg-vapor environment so as to cause a substitution of Tl by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial Tl-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900° C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor.
    Type: Application
    Filed: April 27, 2001
    Publication date: May 9, 2002
    Inventors: Judy Wu, Shao Lin Yan, Yiyuan Xie
  • Patent number: 6365554
    Abstract: An oxide superconductor wire is prepared by preparing a length of precursor wire for processing into an oxide superconductor wire and coating the precursor wire with an isolating layer. The coated wire is wound onto a reel in a spiraling manner, such that each turn of the spiral is in substantial alignment with the preceding turn of the spiral along an axis perpendicular to the axis of winding. The wound precursor wire is then heated to form the oxide superconductor. The removable isolating layer is prepared by coating the wire with a solution including a metal compound and a porosity-inducing component, and heating the coated wire so as to induce porosity and control grain size of the metal compound so as to render the coating removable. The coating functions to isolate the overlapping turns of the wound wire from neighboring wires, so that no diffusion bonding or adherence between the turns occurs. The coating preferably comprises a material that can be reduced or decomposed to form a solderable metal.
    Type: Grant
    Filed: April 12, 2000
    Date of Patent: April 2, 2002
    Assignee: American Superconductor Corporation
    Inventors: Elliott D. Thompson, Jesse Marquardt, Derek P. Daly
  • Patent number: 6358331
    Abstract: A tin alloy bath with controlled iron content is used for coating a niobium-base substrate with tin in a manufacturing process for triniobium tin superconductor. One hundred twenty-five parts per million by weight or less of iron is used in tin alloy baths to increase the reaction kinetics of the formation of the superconductor material.
    Type: Grant
    Filed: June 20, 1996
    Date of Patent: March 19, 2002
    Assignee: General Electric Company
    Inventors: Paul Frederick Browning, Neil Anthony Johnson, Thomas Robert Raber, Melissa Lea Murray, Mark Gilbert Benz