Abstract: A method of manufacture of a textured layer of a high temperature superconductor on a substrate. The method involves providing an untextured high temperature superconductor material having a characteristic ambient pressure peritectic melting point, heating the superconductor to a temperature below the peritectic temperature, establishing a reduced pO.sub.2 atmosphere below ambient pressure causing reduction of the peritectic melting point to a reduced temperature which causes melting from an exposed surface of the superconductor and raising pressure of the reduced pO.sub.2 atmosphere to cause solidification of the molten superconductor in a textured surface layer.

Abstract: A system for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source.

Abstract: This invention concerns a method for the production of an oxide superconducting tape material having a composition of Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, which method consists essentially of forming a sandwich structure comprising a layer formed of a superconducting powder consisting essentially of Bi, Sr, Ca, Cu, and O and having an essential structure of Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 and silver sheet layers, the superconducting powder layer being interposed between the silver sheet layers, heating the sandwich structure at a temperature in the range of 810.degree.-910.degree. C. in an atmosphere consisting of oxygen and an inert gas and having an oxygen partial pressure in the range of 0-90%, thereby melting the superconducting powder layer, and then elevating the oxygen partial pressure of the atmosphere while retaining the same heating temperature, thereby crystallizing the molten superconducting powder layer.

Abstract: Disclosed is a method for making a superconducting field-effect device with a grain boundary channel, the method comprising the steps of depositing a first superconducting thin film on a substrate; patterning the first superconducting thin film to form a patterned superconducting thin film having an opening; depositing a template layer thereon; selectively etching back the template layer to form a patterned template layer; growing a second superconducting thin film to form a grain boundary therebetween; depositing an insulating layer on the second superconducting thin film to protect the second superconducting thin film from degrading in property in the air; selectively etching back the insulating layer to form a patterned insulating layer; forming a gate insulating layer on the patterned insulating layer; and coating metal electrodes thereon, source/drain being formed respectively on the etched portions, and a gate electrode being formed on the deposited portion of the gate insulating layer directly above th

Abstract: Raw material powder for a bismuth oxide superconductor is molded with addition of an organic vehicle, and the molded raw material is heat treated for removing the organic vehicle before the molded raw material is metal-coated. In this heat treatment, conditions not more than those expressed as T=-1.5.times.logH+600 are applied as to relation between temperature (T) and time (H). Thus, phase transformation of 2212 phases mainly composing the raw material is suppressed so that a large amount of 2223 phases having a relatively high critical temperature are formed when heat treatment is performed after metal coating.

Abstract: A method and apparatus for preparing thin films, a device, an electronic and magnetic apparatus, an information recording and reproducing apparatus, an information processing apparatus and a crystal preparing method from the molten state. A thin film is prepared as the substrate or the surface of the substrate is being excited and characterized by a device having at least a substrate and a thin film with at least one layer prepared thereon and an electronic and magnetic apparatus having integration of the devices, wherein at least one layer of the thin film is prepared as the surface of the substrate is being excited. The recording and reproducing apparatus for recording and reproducing information is composed of an information memory medium device having a recording layer of the thin film prepared as the surface of the substrate is being excited and a recording head whose core is prepared as the surface of the substrate is being excited.

Abstract: A process for manufacturing a superconductor. The process is accomplished by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon, overlaying a continuous length of a second substrate ribbon on said first substrate ribbon, and applying sufficient pressure to form a bound layered superconductor precursor between said first substrate ribbon and said second substrates ribbon. The layered superconductor precursor is then heat treated to form a super conductor layer.

Abstract: A process for making a superconducting fiber or wire (10) is provided. The superconducting fiber or wire (10) has a superconducting core (12) and a glass cladding outer layer (14). The process comprises melting a superconducting composition (16) and a glass composition (18) and simultaneously drawing the compositions from a bushing (26) with the glass cladding layer (14) surrounding the superconducting core (12). The wire (10) is then annealed to create a superconducting crystalline phase.

Abstract: Dielectrics represented by (Sr.sub.x Bi.sub.1-x)Bi.sub.2 Ta.sub.2 O.sub.y, wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr--Bi--Ta--O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sr.sub.a (Ba.sub.b, Pb.sub.c)).sub.x Bi.sub.y (Ta and/or Nb).sub.z wherein 0.4.ltoreq.X<1.0, 1.5.ltoreq.Y.ltoreq.3.5, Z=2, 0.7X.ltoreq.a<X, and 0<b+c.ltoreq.0.

Abstract: Improved superconducting thin films are provided having very high T.sub.c (zero) and J.sub.c values, on the order of greater than or equal to 120K and 10.sup.5 A/cm.sup.2 or greater, respectively. The films of the invention are adapted for deposit and support on a compatible substrate, and include a superconductive material, most preferably Tl.sub.2 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10, with up to about 10% elemental gold admixed with the superconductive material. The preferred method for fabricating the thin film superconductors comprises first forming a non-superconducting precursor film on a compatible substrate which is placed in contact with an unsintered bulk body containing thallium; the substrate with precursor film are sintered with the bulk body to form the desired superconductor material.

Abstract: A method for producing a superconductor assembly includes preparing a first bulk ceramic superconductor having a first essentially random pattern of superconductor domains of a copper-oxide ceramic superconductor and non-superconductor domains at a critical temperature, and preparing a second bulk ceramic superconductor having a second essentially random pattern of superconductor domains of a copper-oxide ceramic superconductor and non-superconductor domains at the critical temperature. The method further includes juxtaposing a first surface of the first bulk ceramic superconductor proximate with a first surface of the second bulk ceramic superconductor to form a superconductor assembly where superconductor domains of the first bulk ceramic superconductor and superconductor domains of the second bulk ceramic superconductor are only randomly aligned due to the different first essentially random pattern and second essentially random pattern.

Abstract: A method of producing ceramic superconducting materials such as YBa.sub.2 Cu.sub.3 O.sub.x includes blending together starting materials for the superconducting material. The blend of starting materials are formed into a layer and sintered at a temperature above the peritectic temperature for the superconducting material. Prior to sintering, the starting materials for the superconducting material may be unreacted. The starting materials may also be partially reacted prior to sintering by calcining for a period of time at a temperature which does not result in full reaction of the starting materials to the chemical composition of the desired superconducting material.

Abstract: Method for manufacturing a superconducting device including forming on a surface of a substrate a non-superconducting oxide layer, a first oxide superconductor thin film, etching the first oxide superconductor thin film so as to form a concave portion, implanting ions to the first oxide superconductor thin film at the bottom of the concave portion so as to form an insulating region such that the first oxide superconductor thin film is divided into two superconducting regions by the insulating region, and forming a second oxide superconductor thin film on the insulating region and the two superconducting regions, which is continuous to the two superconducting regions.

Abstract: A method of in-situ fabrication of a Josephson junction having a laminar structure, the method comprising the steps of: (1) etching a planar substrate to yield a first planar segment, a second planar segment and a ramp segment, the ramp segment connecting the two planar segments at an angle thereto and the substrate having a constantly-decreasing thickness in the ramp segment; (2) depositing a first superconductive layer on the substrate; (3) depositing a non-superconductive layer on the first superconductive layer; and (4) depositing a second superconductive layer on the non-superconductive layer, wherein both the first and second superconductive layers, and the non-superconductive layer are epitaxial with a c-axis in a direction substantially normal to the plane of the first and second planar segments, and the layers are of substantially uniform thickness in the three segments.

Abstract: A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented PBCO thin film on the substrate; and a trilayer structure consisting of a lower electrode, a barrier layer and an upper electrode, which serve as a superconductor, an insulator and a superconductor, respectively, the lower electrode and the upper electrode each being formed of an a-axis oriented YBCO superconducting thin film and having an oblique junction edge at an angle of 30.degree. to 70.degree., the barrier layer being formed of an insulating thin film between the two superconducting electrodes, can be operated at a low power with an exceptional speed in calculation and data processing.

Abstract: High T.sub.c superconducting magnetic shields are provided, together with a method of fabricating such shields, wherein the shields exhibit very high critical applied magnetic field values of at least about 50 Gauss at 77 K. In fabrication procedures, a particulate superconducting ceramic oxide (24) (e.g., thallium 2223) is placed within an uniaxial die assembly (10) and subjected to compression while the die is heated via an external heating jacket (26). After formation of a self-sustaining body (24a), the die (10) is additionally heated via the jacket (26). External heating of the die (10) with the superconducting material therein reduces internal stresses within the shield body.

Abstract: A vertical two chamber reaction furnace. The furnace comprises a lower chamber having an independently operable first heating means for heating the lower chamber and a gas inlet means for admitting a gas to create an ambient atmosphere, and an upper chamber disposed above the lower chamber and having an independently operable second heating means for heating the upper chamber. Disposed between the lower chamber and the upper chamber is a vapor permeable diffusion partition. The upper chamber has a conveyor means for conveying a reactant there through. Of particular importance is the thallinating of long-length thallium-barium-calcium-copper oxide (TBCCO) or barium-calcium-copper oxide (BCCO) precursor tapes or wires conveyed through the upper chamber to thereby effectuate the deposition of vaporized thallium (being so vaporized as the first reactant in the lower chamber at a temperature between about 700.degree. and 800.degree. C.

Abstract: A method for fabricating a superconducting device with a substrate, a first oxide superconductor thin film, a barrier layer, a diffusion layer, and a second oxide superconductor thin film. The first oxide superconductor thin film with a very thin thickness is formed on the principal surface of the substrate. The barrier layer and the diffusion source layer are formed on a portion of the first oxide superconductor thin film. The second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the barrier and diffusion source layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film.

Abstract: A method is provided for producing polycrystalline superconductor materials which utilizes a zdense and non-polluting 211 substrate which has been pre-sintered prior to melt processing with a 123 superconducting material. The resulting melt-processed material may be fabricated into a 123 superconductor having a single crystal size of up to 60 mm long which can carry very high current of up to about 1,500 A at 1 .mu.V/cm criterion.

Abstract: A method for growing a superconductive film, comprising:(a) helically winding a tape substrate around the outer periphery of a cylindrical or columnar holder and(b) growing a superconductive film on the surface of the tape substrate by plasma flash evaporation, while rotating the holder. According to the present invention, the heat contact between the holder and the tape substrate is stabilized and a high performance tape conductor can be obtained. In addition, degradation of superconductive performance possibly experienced, when the tape is used for a transmission cable or the like, can be lessened. Furthermore, the large area growth, which is the characteristic feature of plasma flash evaporation, is effectively utilized and production efficiency of a long tape conductor can be enhanced.

Abstract: An oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer. The oxide is hydrogenated. The oxide is oxidized after it is hydrogenated. The hydrogenation and the oxidization are executed simultaneously with or after the oxide is formed. The hydrogenation and the oxidization improve the superconducting characteristics of the oxide superconductor.

Abstract: Process for increasing the pinning force of superconducting Bi-Sr-Ca-Cu-O ceramic moldings, which comprises heating the pure-phase 2212 phase of a Bi-Sr-Ca-Cu-O ceramic molding under pure oxygen or an oxygen-containing gas for from 1 to 40 minutes to a temperature of from 825.degree. to 900.degree. C. and generating secondary-phase precipitates in the process.

Abstract: A process for controlling crystalline orientation of an oxide superconductive film includes a first-heat-treatment step, and a second-heat-treatment step. In the first-heat-treatment step, an oxide superconductive film is heated and held in non-oxidizing atmosphere. Accordingly, partial oxygen deficiency is caused in the oxide superconductive film. In the second-heat-treatment step, the oxide superconductive film is heated and held in oxygen-rich atmosphere. Consequently, oxygen is re-introduced into the oxide superconductive film. Thus, crystalline orientation of the oxide superconductive film is altered. The process enables to readily form not only an "a"-axis-oriented oxide superconductive film but also a "b"-axis-oriented oxide superconductive film.

Abstract: In accordance with the invention, a high density z-direction interconnection medium is made by the steps of providing a non-conductive membrane having z-direction channels, filling the channels with liquid precursor of conductive material, converting the trapped precursor into conductive material within the channels, and, advantageously, forming solder bumps in contact with the conductive material in the channels. The method is particularly useful for forming hollow tubular or porous conductive pathways having enhanced resistance to thermal and mechanical stress.

Abstract: A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.

Abstract: A method of forming a superconducting joint between the Nb.sub.3 Sn layer of a superconducting tape and a superconducting NbTi wire through use of a Pb-Bi bath, joint securing arrangement and mold around the joint.

Abstract: Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.

Abstract: Method for increasing the critical current density in Type II superconducting materials. The generation of a regular pattern of defects for pinning vortices, where the density of pinning sites is matched to the density of vortices produced by a chosen magnetic field in the particular superconducting material, is described. It is anticipated that such a defect pattern will substantially increase the critical current density carrying capability of the superconducting material so patterned. The fabrication of thick superconductors and conductors having chosen shapes is also described.

Abstract: A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.

Abstract: The present invention discloses a process for forming an a-axis superconducting junction by adjusting the deposition temperature of an oxide normal conductor layer/and oxide superconductor layer/an oxide insulating layer/an oxide normal conductor layer/and an oxide superconductor layer, which are sequentially multilayered on an oxide single crystalline substrate. According to the present invention, the oxide superconductor layer and the oxide insulating layer have an a-axis oriented perpendicularly, and the oxide normal conductor layer have a b-axis oriented perpendicularly, so that a superconductor Josephson junction may be obtained.

Abstract: The invention provides a method for preparing a layered structure made up of a plurality of thin films composed of different compositions, in which the method involves using a reactive co-evaporation technique to deposit a first thin film on a substrate using a first set of evaporation sources, and then depositing another thin film of a different composition on the first thin film, using a second set of evaporation sources that has no evaporation sources common with the first set of evaporation sources. In the method, the first thin film is deposited in a first deposition sub-chamber and the second thin film is deposited in a second deposition subchamber, both of which are part of a single vacuum chamber.

Abstract: A superconducting circuit having patterned superconducting wiring lines. Each wiring line consists of at least one portion (2') of the thin film (2) of an oxide superconductor deposited on a substrate (1). The portion (2') has a predetermined crystal orientation and the remaining portions (2") have a different crystal orientation or changed to non-superconductor. The superconducting circuit has a planar surface.In variations, two different wiring lines (21, 22) each having a different crystal orientation are produced at different portions of a thin film of oxide superconductor, so that superconducting current flow separately through two different portions in a common thin film.

Abstract: Nb--Sn precursor articles are described that include a Nb alloy article that is at least partially coated with a layer of a Sn alloy, such as a Sn--Cu alloy. The precursor articles described herein have a controlled concentration of the impurity elements As and S in the Sn alloy layer. The concentration of these elements in the Sn alloy layer is less than or equal to 50 ppm by weight. This invention also describes a method for making Nb--Sn precursor articles having a controlled concentration of As and S impurities.

Abstract: An oxide superconductor capable of realizing a high critical current density and its manufacturing method requiring only a low temperature heat treatment. An oxide superconductor has a superconductive layer with a composition of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, where RE stands for any one of rare earth elements including Y, Eu, Gd, Dy, Ho, Er, and Yb, which is formed on the substrate by RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x phase and CuO phase resulting from a decomposition of RE.sub.1 Ba.sub.2 Cu.sub.4 O.sub.8 phase, in which the CuO phase and micro-defects caused by the decomposition function as pinning centers. This superconductive layer is formed by applying a solution containing organic compounds of a plurality of metallic elements for constituting the oxide superconductive layer; calcining the substrate applied with the solution to obtain a calcined body in which the organic compounds contained in the solution are thermally decomposed; heating the calcined body to produce RE.sub.1 Ba.sub.2 Cu.sub.

Abstract: Fine epitaxial patterns of yttrium barium copper oxide on a strontium titanate substrate are provided by using a silicon nitride mask to define the pattern to be formed. A thin film of yttrium barium copper oxide is placed on the silicon nitride mask and exposed portions of strontium titanate substrate. Where the yttrium barium copper oxide is in contact with the silicon nitride mask, it is nonepitaxial in crystal structure. Where the yttrium barium copper oxide contacts the strontium titanate substrate in the openings, it is epitaxial in structure forming fine patterns that become superconducting below the critical transition temperature. A channel can be formed in the strontium titanate substrate. The epitaxial yttrium barium copper oxide pattern is formed in this channel to minimize possible exposure to the silicon nitride mask.

Abstract: A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.

Abstract: The present invention relates to a polycrystalline thin film deposit acting as a substrate material composed of grains of a cubic structure in which the intergranular misorientation, defined as the orientation difference between the a-axes (or b-axes) of the neighboring grains, is less than 30 degrees. Such a substrate base is produced by depositing a target material on a base material by sputtering while irradiating the substrate base with ion beams at an oblique angle to the base. The preferred range of the oblique angle is between 40 to 60 degrees. Examples are presented of application of such textured polycrystalline substrate base for the production of superconducting oxide thin layer of outstanding superconducting properties.

Abstract: Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.

Abstract: Circuit board devices are provided based on use of high temperature superconducting ceramic polymers comprising high temperature superconducting ceramic powders distributed in electrically insulative organic polymers which are thermosetting by reaction of a two-part liquid mixture or by catalytic or photoinitiation of a one-part liquid. The ceramic domains transmit their superconductivity across the insulating barriers of organic polymers enabling formation of superconductive lines and superconducting bonds to electronic devices to be adhered to circuit boards, and providing superconducting circuitry.

Abstract: Patterned superconducting wiring lines each consisting of a portion of a thin film of an oxide superconductor deposited on a flat substrate, the portion having a predetermined crystal orientation (a-axis or c-axis orientation) with respect to a flat surface of the substrate, remaining portions of the thin film of the oxide superconductor having a different crystal orientation (c-axis or a-axis orientation) from the portion and/or consisting of an insulation zones. Both of the portion and the remaining portions have a substantially identical thickness so that the thin film has a substantially flat planar surface.

Abstract: A method is disclosed for fabricating a polycrystalline <223> thallium-containing superconductor having high critical current at elevated temperatures and in the presence of a magnetic field. A powder precursor containing compounds other than thallium is compressed on a substrate. Thallium is incorporated in the densified powder precursor at a high temperature in the presence of a partial pressure of a thallium-containing vapor.

Abstract: A method for manufacturing a three-terminal superconducting device is disclosed. A superconducting channel constituted in an oxide superconductor thin film is deposited on a deposition surface of a substrate. A gate electrode for the device is formed through a gate insulator layer on the superconducting channel of the device. The steps of forming the gate electrode include forming a thin film that stands upright with respect to the insulator layer for the gate.

Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.

Abstract: A cold surface is obtained by coating a mat of ceramic particles that are bound together with a sol-gel binder and cooling the surface with a cryogen that wicks to the surface through pores in the mat.

Abstract: A process for depositing successively a plurality of thin films on a bottom superconductor layer made of oxide superconductor deposited on a substrate in a single chamber under a condition, the bottom superconductor layer is heated in ultra-high vacuum at a temperature which is lower than the oxygen-trap temperature (T.sub.trap) at which oxygen enter into the oxide superconductor but higher than a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap -100.degree. C.) and then the first thin film is deposited thereon.

Abstract: Disclosed is a process for forming a super-conducting film, which a multi-layer metal film (buffer film) is formed at a specific temperature on a ceramic substrate and a superconducting film is formed at a specific temperature on the multi-layer metal film. According to this process, a superconducting film having a high critical temperature can be formed over the ceramic substrate while controlling or suppressing the occurrence of a chemical reaction between the substrate and the superconducting film, and required superconducting performances can be manifested or exhibited.

Abstract: The method of preparing an NB.sub.3 Al superconducting wire comprises the steps of passing an Nb/Al composite wire consisting of an Nb metal or an Nb alloy and an Al metal or an Al alloy through a furnace for heating the same from the room temperature to a prescribed temperature, subsequently passing the same through the furnace for holding the same at the prescribed temperature, and subsequently passing the same through a cooling part for cooling the same from the prescribed temperature to the room temperature, and these steps are continuously carried out by continuously moving the wire. According to the present invention, it is possible to obtain an Nb.sub.3 Al superconducting wire having homogeneous characteristics along its overall width with a high critical current density.

Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract: A process for preparing an YBCO oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O.sub.2 including O.sub.3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and K cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources, and a chilled oxidizing gas is locally supplied to the vicinity of the substrate.

Abstract: A superconductive device for helping shield magnetic field comprises at least two members; a layer containing superconductive oxide over each of said members; means for connecting said members to form a substrate; and means for connecting said layers containing superconductive oxide along a joint in which said members are connected.