Electrolytic Or Barrier Layer Type Patents (Class 427/80)
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Patent number: 6375688Abstract: The invention includes the steps of preparing a mixed solution containing a polymerizable monomer, an oxidant, and a solvent; immersing a capacitor element in the mixed solution; and heating the capacitor element immediately over the boiling point of the solvent, after taking out the capacitor element from the mixed solution, in order to evaporate the solvent and form a conductive polymer layer on the capacitor element; the heating is carried out at a rate capable of generating a force able to tear open the conductive polymer. This method provides a capacitor having a high capacitance attainment ratio, an excellent dissipation factor, and a superior impedance characteristic.Type: GrantFiled: September 7, 1999Date of Patent: April 23, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kenji Akami, Yasuo Kudo, Yasue Matsuya, Hiroki Kusayanagi
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Patent number: 6361572Abstract: Disclosed is a method of making an electrolytic capacitor including the steps of forming a cathode by depositing a homogeneous and densified conducting polymer on a dielectric layer of a valvular metal porous anode. The conducting polymer is formed of two layers by chemical oxidation polymerization. The first conductive polymer layer is formed in the pretreatment step using a solution excluding an organic acid-type dopant, the polymer is efficiently formed on the inner surface of the pores of the anode and the second conductive polymer layer is formed in the primary treatment step on the first conductive polymer layer, using a solution containing an organic acid-type dopant. The resultant capacitor obtains a high capacitance, a low impedance, and a high responsiveness at high frequencies.Type: GrantFiled: July 14, 2000Date of Patent: March 26, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Emiko Igaki, Masakazu Tanahashi, Chiharu Hayashi
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Patent number: 6336944Abstract: A method of manufacturing solid electrolytic capacitors by forming an anodized film on a surface of a valve metal anode; forming a capacitor element by adhering an insulating resist tape on said anodized film for separating a negative electrode part and a positive electrode part; forming a MnO2 layer by immersing the capacitor element in a solution containing manganese salts, removing the capacitor element from the solution, and thermally decomposing attached manganese salts; immersing the capacitor element on which the MnO2 layer is formed in an organic polar solvent or aqueous solution thereof; re-anodizing the capacitor element by immersing the capacitor element in an electrolytic solution before the organic polar solvent or its solution dries; and forming a solid electrolyte layer and cathode conductor layer on the base layer.Type: GrantFiled: January 28, 2000Date of Patent: January 8, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yukari Shimamoto, Kazuyo Saito
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Patent number: 6334966Abstract: An intrinsically conductive polymer is prepared with a chemical oxidative process. The polymer is prepared by first dipping or coating a substrate with an Fe(III)-containing oxidizer solution and drying. The substrate is then dipped or coated with a monomer, such as 3,4-ethylenedioxythiophene solution, and reacted to form the conductive polymer. The monomer is dissolved in a solvent in which it has a high solubility but in which the Fe(III)-containing oxidizer has low solubility. This minimizes cross-contamination of the monomer and oxidizer dipping solutions thereby making this process suitable for high volume production. Dissolving the monomer in a solvent allows control over the stoichiometric ratio of monomer to oxidizer and prevents an excess of monomer thereby facilitating the removal of any unreacted monomer by water.Type: GrantFiled: November 6, 2000Date of Patent: January 1, 2002Assignee: Kemet Electronics CorporationInventors: Randolph S. Hahn, Philip M. Lessner, Brian J. Melody, John T. Kinard
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Patent number: 6331325Abstract: A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.Type: GrantFiled: September 30, 1994Date of Patent: December 18, 2001Assignee: Texas Instruments IncorporatedInventors: Bernard M. Kulwicki, Robert Tsu
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Patent number: 6287630Abstract: The present invention relates to an improved method of impregnating electrolytic capacitor stacks or wound rolls with a polymer electrolyte such as a hydroxyethylmethacrylate (HEMA) or hydroxyethylacrylate (HEA) based polymer electrolyte, to render them suitable for use in electrolytic capacitors, and to such electrolytic capacitors. The initiator to promote the polymerization of this electrolyte is deposited on the foil or in the stack or wound roll prior to impregnation of the polymer electrolyte, allowing the electrolyte to be warmed to a temperature suitable for easy impregnation into the anode and cathode foil and paper.Type: GrantFiled: May 14, 1999Date of Patent: September 11, 2001Assignee: Pacesetter, Inc.Inventors: Thomas F. Strange, Timothy R. Marshall
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Patent number: 6270835Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.Type: GrantFiled: October 7, 1999Date of Patent: August 7, 2001Assignee: MicroCoating Technologies, Inc.Inventors: Andrew T. Hunt, John S. Flanagan, George A. Neuman
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Patent number: 6270613Abstract: An electrode is formed on a chip-like electronic part of the type having a central axis, a polygonal cross section as viewed in a plane which is perpendicular to the central axis, a plurality of side surfaces extending in respective planes which are generally parallel to the central axis, and a pair of end surfaces extending generally parallel to the central axis, each adjacent pair of side surfaces meeting along a respective edge of the chip-like electronic part. The electrode is formed by applying a first band of conductive material to at least one of the side surfaces and applying a second band of conductive material to the remaining side surface(s) in such a manner that the first and second bands meet at respective ones of the edges and together form a continuous band of conductive material extending around the outer periphery of the chip-type electronic part.Type: GrantFiled: July 24, 1998Date of Patent: August 7, 2001Assignee: Murata Manufacturing Co., Ltd.Inventors: Tadahiro Nakagawa, Makoto Fukuda
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Patent number: 6225133Abstract: After an interlayer insulating film is deposited on a silicon substrate, a contact hole or contact holes is or are formed at a desired position(s) and, then, after a polysilicon layer is deposited and the contact hole(s) is (are) embedded, the surface of the polysilicon layer is flattened by chemical and mechanical polishing using at least one of piperazine or colloidal silica slurry, and a barrier metal film 4 and a highly dielectric thin film 5 are deposited and processed to a desired size. Finally, an Al/TiN film 6 adapted for the upper electrode is formed. The leak current of the thin film capacitor which is obtained according to this method can be greatly reduced.Type: GrantFiled: September 1, 1994Date of Patent: May 1, 2001Assignee: NEC CorporationInventors: Shintaro Yamamichi, Hirohito Watanabe, Yoichi Miyasaka
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Patent number: 6214271Abstract: The invention relates to post pyrolysis thermal treatment for pyrolytic manganese dioxide coatings for use in conjunction with porous anodized valve metal nitride electrolytic capacitor anodes for the purpose of transforming the manganese dioxide to a higher conductivity form of manganese dioxide.Type: GrantFiled: May 26, 2000Date of Patent: April 10, 2001Assignee: Kemet Electronics CorporationInventors: Randolph S. Hahn, Brian J. Melody, John T. Kinard, David A. Wheeler
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Patent number: 6204069Abstract: A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions.Type: GrantFiled: October 3, 1994Date of Patent: March 20, 2001Assignee: Texas Instruments IncorporatedInventors: Scott R. Summerfelt, Howard R. Beratan, Bruce Gnade
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Patent number: 6200629Abstract: A method for manufacturing a capacitor includes the steps of forming a dielectric layer over a substrate, and then forming at least one contact within the dielectric layer. Next, a first metal layer is formed on the dielectric layer and an electromigration layer is formed on the first metal layer. A patterned capacitor dielectric layer is formed on the electromigration layer in a capacitor area. A second metal layer is then formed over the substrate and defined; a portion of second metal serving as an upper electrode of the capacitor is therefore formed on the electromigration layer. A portion of the second metal layer on the contact serves as a portion of the via of the interconnects. The electromigration layer is self-alignedly patterned when patterning the second metal layer, and a portion of the electromigration layer serves as a lower electrode of the capacitor. The electromigration layer on the contact in the via area is used to prevent electromigration.Type: GrantFiled: January 12, 1999Date of Patent: March 13, 2001Assignee: United Microelectronics Corp.Inventor: Shih-Wei Sun
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Patent number: 6174337Abstract: The method comprises forming a dry preunit including a stack of cells. Each cell is formed by placing sequentially a conductive support sheet coated on one or both sides with a porous conductive material except at the perimeter edge surfaces, an ion permeable or semi-permeable space separator, a gasket, at least one hollow capillary tube having a melting point higher than the gasket material. Upon heating the gasket material flows, adheres to, and seals the edges of the stack creating a solid integral stack of layers of alternating electrically conductive sheet coated with a porous electrically conducting material and a separator. The gasket material creates a continuous integral external polymer enclosure having hollow capillary tubes. After an electrolyte is introduced into the preunit, the capillary tubes are sealed.Type: GrantFiled: December 14, 1999Date of Patent: January 16, 2001Assignee: Pinnacle Research Institute, Inc.Inventor: Richard L. Keenan
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Patent number: 6154357Abstract: The invention relates To a process for the impregnation of electrical capacitors which includes performing the impregnation of the coil winding with a dielectric fluid, eliminating the excess of the dielectric fluid, filling the casing containing the impregnated coil winding with a gelable composition and the dielectric fluid for impregnating the coil winding and gelling the gelable composition.Type: GrantFiled: November 19, 1999Date of Patent: November 28, 2000Assignee: Elf Atochem S.A.Inventor: Noelle Berger
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Patent number: 6083614Abstract: The present invention is related to a method of producing a nanoporous body containing nanodiamonds and having a desired shape, comprising the steps of: forming an intermediate body having the desired shape of nanodiamond particles having a maximum size of 10 nm, exposing said body to a gaseous hydrocarbon or a mixture of hydrocarbons at a temperature exceeding the decomposition temperature for the hydrocarbon or the hydrocarbons. In accordance with the invention the intermediate body is formed with a porosity of 50-80 vol. %, and during the heat treatment of the intermediate body with hydrocarbon or hydrocarbons, the mass of the body is increased by 50% at the most. The present invention also relates to a nanoporous body produced by the method and to uses of such a body.Type: GrantFiled: June 1, 1998Date of Patent: July 4, 2000Assignee: Alfar International, Inc.Inventors: Sergey Konstantinovitch Gordeev, Sergey Germanovich Zhukov, Peter Ivanovietc Belobrov, Andrej Nicolajvietc Smolianinov, Juri Pavlovietc Dikov
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Patent number: 6010940Abstract: A method of fabricating a capacitor for a integrated circuit device includes the steps of forming a lower capacitor electrode on an integrated circuit substrate, and forming a dielectric layer on the lower capacitor electrode opposite the integrated circuit substrate. A titanium nitride barrier layer is deposited by chemical vapor deposition on the dielectric layer opposite the integrated circuit substrate to a thickness in the range of 50 .ANG. to 500 .ANG. using TiCl.sub.4 as a source gas. The titanium nitride barrier layer is annealed, and an upper electrode is formed on the titanium nitride barrier layer opposite the integrated circuit substrate.Type: GrantFiled: September 24, 1997Date of Patent: January 4, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Myoung-bum Lee, Hyeon-deok Lee
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Patent number: 6010743Abstract: The invention relates to a process for impregnation of electrical capacitors which consists in performing the impregnation of the coil winding with a dielectric fluid and then eliminating the excess of the said fluid and in filling the casing containing the said impregnated coil winding with a gelable composition including the said dielectric fluid for impregnation of coil winding.Type: GrantFiled: January 30, 1998Date of Patent: January 4, 2000Assignee: Elf Atochem S.A.Inventor: Noelle Berger
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Patent number: 5993969Abstract: A microporous carbon film for use as electrodes in energy strorage devices is disclosed, which is made by the process comprising the steps of: (1) heating a polymer film material consisting essentially of a copolymer of polyvinylidene chloride and polyvinyl chloride in an inert atmosphere to form a carbon film; and (2) activating said carbon film to form said microporous carbon film having a density between about 0.7 g/cm.sup.2 and 1 g/cm.sup.2 and a gravimetric capacitance of about between 120 F/g and 315 F/g.Type: GrantFiled: January 30, 1997Date of Patent: November 30, 1999Assignee: Sandia CorporationInventor: Ming X. Tan
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Patent number: 5951840Abstract: The solid electrolytic capacitor comprises a sealed capacitor element having, as a solid electrolyte layer, a heat resistant conductive layer formed on a dielectric oxide film. The heat resistant conducting polymer layer contains water, and the capacitor element inside is substantially oxygen-free. A cathode conductive layer is provided on the capacitor element and then both an external cathode lead and an external anode lead are mounted on the capacitor element. Water is supplied to the conducting polymer layer of the capacitor element such that the conducting polymer layer inside contains water. The capacitor element is then sealed such that water is held within the heat resistant conducting polymer layer and that the capacitor element inside is substantially oxygen-free. The step of supplying water is carried out by dipping the heat resistant conducting polymer layer in water or heavy water or exposed to water-containing inert gas.Type: GrantFiled: December 28, 1995Date of Patent: September 14, 1999Assignee: NEC CorporationInventors: Takashi Fukaumi, Toshihiko Nishiyama, Atsushi Kobayashi, Masashi Ohi, Eishun Tsuchida, Kumihisa Yamamoto, Shinji Takeoka, Yoshitaka Fujishima
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Patent number: 5912044Abstract: Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor. Preferably, the dielectric films are formed of barium strontium titanate and the metal electrode layers are formed of platinum. The present invention overcomes the problems associated with the use of strong etchants to sequentially form separate via openings through the electrode and dielectric layers, prevents the potential for delamination of the respective layers during wet etching and the possible undesirable effects of etching solutions on substrate materials.Type: GrantFiled: January 10, 1997Date of Patent: June 15, 1999Assignee: International Business Machines CorporationInventors: Mukta Shaji Farooq, Ajay P. Giri, Rajesh Shankerial Patel
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Patent number: 5888582Abstract: Acid-doped, polyaniline-based polymers are formed into fibers, films, and coatings with a solvent of at least one bicyclic terpene. Such a solvent system is characterized by a drying temperature of less than 150.degree. C. and a relatively low toxicity.Type: GrantFiled: December 9, 1997Date of Patent: March 30, 1999Assignee: Kemet Electronics Corp.Inventors: John T. Kinard, Brian J. Melody, Philip M. Lessner
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Patent number: 5885650Abstract: Acid-doped, polyaniline-based polymers are formed into fibers, films, and coatings with a solvent of N-ethylpyrrolidone. Such a solvent system is particularly useful for the formation of a solid electrolyte on a capacitive element.Type: GrantFiled: October 16, 1998Date of Patent: March 23, 1999Assignee: Kemet Electronics Corp.Inventors: Brian J. Melody, John T. Kinard, Philip M. Lessner
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Patent number: 5853794Abstract: Acid-doped, polyaniline-based polymers are formed into fibers, films, and coatings with a solvent of N-ethylpyrrolidone. Such a solvent system is particularly useful for the formation of a solid electrolyte on a capacitive element.Type: GrantFiled: October 31, 1997Date of Patent: December 29, 1998Assignee: Kemet Electronics Corp.Inventors: Brian J. Melody, John T. Kinard, Philip M. Lessner
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Patent number: 5800857Abstract: A dry preunit (10), includes a plurality of cells (110, 112, 114) in a true bipolar configuration, which are stacked and bonded together, to impart to the device an integral and unitary construction. Each cell (114) includes two electrically conductive electrodes (111A, 111B) that are spaced apart by a predetermined distance. The cell (114) also includes two identical dielectric gaskets (121, 123) that are interposed, in registration with each other, between the electrodes (111A, 111B), for separating and electrically insulating these electrodes. When the electrodes (111A, 111B), and the gaskets (121, 123) are bonded together, at least one fill gap (130) is formed for each cell. Each cell (114) also includes a porous and conductive coating layer (119, 120) that is formed on one surface of each electrode. The coating layer (119) includes a set of closely spaced-apart peripheral microprotrusions (125), and a set of distally spaced-apart central microprotrusions (127).Type: GrantFiled: September 30, 1996Date of Patent: September 1, 1998Assignee: Pinnacle Research Institute, Inc.Inventors: Nazir Ahmad, Keh-Chi Tsai
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Patent number: 5711988Abstract: A dry preunit (10), includes a plurality of cells (110, 112, 114) in a true bipolar configuration, which are stacked and bonded together, to impart to the device an integral and unitary construction. Each cell (114) includes two electrically conductive electrodes (111A, 111B) that are spaced apart by a predetermined distance. The cell (114) also includes two identical dielectric gaskets (121,123) that are interposed, in registration with each other, between the electrodes (111A, 111B), for separating and electrically insulating these electrodes. When the electrodes (111A, 111B), and the gaskets (121, 123) are bonded together, at least one fill gap (130) is formed for each cell. Each cell (114) also includes a porous and conductive coating layer (119, 120) that is formed on one surface of each electrode. The coating layer (119) includes a set of closely spaced-apart peripheral microprotrusions (125), and a set of distally spaced-apart central microprotrusions (127).Type: GrantFiled: January 23, 1995Date of Patent: January 27, 1998Assignee: Pinnacle Research Institute, Inc.Inventors: K. C. Tsai, Gary E. Mason, Mark L. Goodwin
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Patent number: 5672377Abstract: A process for the preparation of polyaniline by an oxidation polymerization of aniline with use of an oxidizing agent and a protonic acid, wherein the pKa value of a byproduct produced by the reduction of the oxidizing agent is greater than the pKa value of the protonic acid. The protonic acid is an aromatic sulfonic acid compound having at least a sulfonic-acid group. A process is also provided for the formation of a solid electrolytic capacitor including an electrolyte of the polyaniline. A method is provided of improving the electrical conductivity of the polyaniline prepared by the above process. The polyaniline is subjected to a heat treatment in a vacuum or an inert gas in which a partial pressure of oxygen is 10 mmHg or below.Type: GrantFiled: March 25, 1996Date of Patent: September 30, 1997Assignee: NEC CorporationInventors: Kosuke Amano, Hitoshi Ishikawa, Atsushi Kobayashi, Masaharu Satoh
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Patent number: 5648011Abstract: The structurally stable gelled electrolyte of the present invention includes a base electrolyte, a three-dimensional polymer precursor that is radiation curable and an electrically non-conducting solvent gelling agent. The base electrolytes of this invention are comprised of an aprotic liquid and a dissolved ionizable alkaline metal salt. The preferred radiation curable polymer pre-cursors of this invention include trimethylol propane ethoxy triacrylate (TMPEOTA) and poly(ethylene glycol) diacrylate (PEGDA). The solvent gelling agent should be a solid powder or polymer with high surface area to adsorb the liquid electrolyte. Solid powders that can be used in the gelling agent include inorganic oxygen compounds such as silica (SiO.sub.2), titania (TiO.sub.2), alumina (Al.sub.2 O.sub.3), magnesium oxide (MgO), barium oxide (B.sub.2 O.sub.3) and the like. Other compounds that can be used in the gelling agent include super absorbent polymers, clays, zeolite and such.Type: GrantFiled: March 15, 1995Date of Patent: July 15, 1997Assignee: Micron Communications, Inc.Inventor: Peter Miller Blonsky
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Patent number: 5622746Abstract: The present invention provides a manganese nitrate coating having high conductivity and solid tantalum anode capacitors having low ESR by using an oven atmosphere which effectively treats all of the anodes in the oven. The manganese nitrate coating of the present invention is produced under highly oxidizing conditions by providing one or more oxidizing agents more active than nitrogen dioxide in the atmosphere of the oven during pyrolysis of manganese nitrate. The oxidizing agents include nitric acid, hydrogen peroxide, ozone, and mixtures thereof.Type: GrantFiled: March 7, 1995Date of Patent: April 22, 1997Assignee: Kemet Electronics CorporationInventors: Randolph S. Hahn, Brian J. Melody, John D. Henley, Jr., John Piper, Shelby J. Poore, Tsung-Yuan Su, John T. Kinard
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Patent number: 5593462Abstract: The present invention relates to a method of manufacturing a multilayer electrochemical assembly comprising steps consisting in co-extruding an element comprising at least one electrode film and an electrolyte film based on an ionic conductor polymer through a die so that the electrode is accessible over at least one main face of the extruded element, and over not more than one edge of said element, spiral winding a complex based on the above-specified extruded element to form a structure having, on different faces of its edges, means for making electrical contact respectively with each of the two electrodes, and metallizing said faces of the edge of the structure.Type: GrantFiled: November 14, 1994Date of Patent: January 14, 1997Assignee: Bollore TechnologiesInventors: Michel Gueguen, Marc Billion, Herve Majastre
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Patent number: 5538756Abstract: The present invention relates to thin adhesive composite films formed from fluoropolymers imbibed with adhesives and containing a filler at least within the infra-structure of the polymer to provide the film with a high dielectric constant. The films of the present invention are particularly suitable for use in a capacitor or in applications requiring high capacitive properties.Type: GrantFiled: September 23, 1994Date of Patent: July 23, 1996Assignee: W. L. Gore & AssociatesInventors: Joseph E. Korleski, David R. King
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Patent number: 5442197Abstract: A super-capacitor comprising a positive electrode, a negative electrode, both made of a p-doped electron conductive polymer, and an electrolyte. The electrolyte comprises an organic redox compound soluble in the electrolyte in an amount of at least 10.sup.-3 mole per liter. The redox potential of the redox compound lies in a non-capacitive region of the electron conductive polymer. The redox compound is reduced in a reversible manner at the negative electrode when the potential of the negative electrode is equal to or less than the redox potential of the redox compound, and the redox compound is oxidized in a reversible manner at the positive electrode when the potential of the positive electrode is equal to or more than the redox potential of the redox compound.Type: GrantFiled: December 10, 1992Date of Patent: August 15, 1995Assignee: Alcatel Alsthom Compagnie Generale D'ElectriciteInventors: Xavier Andrieu, Laurence Kerreneur
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Patent number: 5436796Abstract: A solid electrolytic capacitor comprising a film-forming metal, a dielectric oxide film formed thereon, and an electrically conductive composite polymer film formed on the dielectric oxide film as a solid electrolyte,the electrically conductive composite polymer film comprising(a) a polyaniline as a first polymer soluble in an organic solvent in an undoped state, which is a polymer having a quinonediimine structural unit and a phenylenediamine structural unit represented by following formula (I) as the main repeating unit; ##STR1## wherein m and n are the molar fractions of the quinonediimine structural unit and the phenylenediamine structural unit, respectively, and 0<m<1, 0<n<1, and m+n=1,(b) a second polymer selected from a polymer having a structure containing an ester group or an amido group in a main chain or a side chain as the main repeating unit and a cellulose derivative, and(c) a protonic acid having a pKa value of 4.8 or less.Type: GrantFiled: September 9, 1994Date of Patent: July 25, 1995Assignee: Nitto Denko CorporationInventors: Masao Abe, Keisuke Kii, Yoshihiro Uetani, Akira Ohtani
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Patent number: 5384152Abstract: A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.Type: GrantFiled: June 1, 1993Date of Patent: January 24, 1995Assignee: International Business Machines CorporationInventors: Jack C. Chu, Louis Lu-Chen Hsu, Toshio Mii, Joseph F. Shepard, Scott R. Stiffler, Manu J. Tejwani, Edward J. Vishnesky
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Patent number: 5384685Abstract: Electrodes of an electrical charge storage device are separated by forming on the surfaces of the electrodes arrays of substantially uniform electrically insulating microprotrusions made preferably of an organic epoxide polymer. The electrodes are thin, flat electrically conducting metal sheets coated on one or both flat surfaces with electrically conducting porous carbon or a porous metal oxide. The microprotrusions are applied to the coated electrodes through a stencil by screen printing and essentially retain their shape and dimensions after curing.Type: GrantFiled: September 18, 1992Date of Patent: January 24, 1995Assignee: Pinnacle Research Institute, Inc.Inventors: Robert Tong, James M. Poplett, Mark L. Goodwin, Ronald L. Anderson, James P. Nelson
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Patent number: 5372859Abstract: Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices.Type: GrantFiled: October 20, 1992Date of Patent: December 13, 1994Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: Sarita Thakoor
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Patent number: 5260094Abstract: Low porosity titania forms containing only a small amount of hydroxyl groups and possessing a high refractive index which are property stable regardless of humidity level and which prohibit electrical and gas leakage and optical loss, are obtained in a sol-gel process by rapidly heating to curing temperature, e.g. at a rate of 8000.degree. C./min. One application provides more stable, longer-lasting sol-gel prepared optical interference filters. Other applications provide capacitors with high capacitance and optical planar waveguides.Type: GrantFiled: October 26, 1992Date of Patent: November 9, 1993Assignee: Cornell Research Foundation, Inc.Inventors: Emmanuel P. Giannelis, Joseph L. Keddie
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Patent number: 5219611Abstract: Low porosity titania forms containing only a small amount of hydroxyl groups and possessing a high refractive index which are property stable regardless of humidity level and which prohibit electrical and gas leakage and optical loss, are obtained in a sol-gel process by rapidly heating to curing temperature, e.g. at a rate of 8000.degree. C./min. One application provides more stable, longer-lasting sol-gel prepared optical interference filters. Other applications provide capacitors with high capacitance and optical planar waveguides.Type: GrantFiled: September 30, 1991Date of Patent: June 15, 1993Assignee: Cornell Research Foundation, Inc.Inventors: Emmanuel P. Giannelis, Joseph L. Keddie
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Patent number: 5120423Abstract: A method for the formation of an electrolyte layer of solid electrolytic capacitors is provided. The method comprises: (1) forming an oxide film with dielectric properties on the surface of a porous electrode made of a valve metal, the electrode being electrically connected to an anode lead made of a valve metal, (2) impregnating the electrode, on which the oxide film has been formed, with a solution of manganese nitrate, (3) electrostatically depositing electrolyte powder particles on the surface of the electrode which has been impregnated with the solution, and (4) pyrolyzing the manganese nitrate to manganese dioxide to form an electrolyte layer on the surface of the oxide film.Type: GrantFiled: March 19, 1990Date of Patent: June 9, 1992Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Junichi Kurita, Tsutomu Irikura
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Patent number: 5082627Abstract: A dielectric material of a capacitive affinity sensor has a three-dimensional molecular binding site array. A glass base is layered with a binding agent like silane from which a polymeric backbone like polylysine extends. The polymeric backbone is prepared to accept receptor molecules like cortisol hemisuccinate to bind a specific antibody. Such an array changes dielectric properties between the two electrodes of the capacitive affinity sensor to greatly enhance sensitivity of the sensor.Type: GrantFiled: May 1, 1987Date of Patent: January 21, 1992Assignee: Biotronic Systems CorporationInventor: William D. Stanbro
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Patent number: 5071521Abstract: A method for fabricating a solid electrolytic capacitor is described, in which a solid electrolyte is made of a conductive polymer layer and is formed on a conductive inorganic layer which is formed on a metallic foil through a dielectric film. For the formation of the conductive polymer layer, while an external electrode is not directly contacted with the conductive inorganic layer, the electrolytic polymerization reaction of a polymerizable monomer in an electrolytic solution is carried out. For this purpose, the external electrode may be covered with a conductive polymer film at the contact portion. Alternatively, the external electrode may be moved from one position to another or may be kept apart from the conductive inorganic layer during the electrolytic polymerization reaction. By this, the mechanical damages of the conductive inorganic layer with the external electrode are suppressed with good electric characteristics of the capacitor.Type: GrantFiled: September 6, 1990Date of Patent: December 10, 1991Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshikuni Kojima, Masao Fukuyama, Sohji Tsuchiya, Yasuo Kudoh
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Patent number: 4954371Abstract: A method for continuously supplying a uniform vapor of a polymerizable and/or cross-linkable material. A continuous liquid flow of said material is supplied at a temperature below both the decomposition temperature and the polymerization temperature of said material and atomized into a continuous flow of liquid droplets having a particle size from about 1 to about 50 microns. The droplets are continuously vaporized upon contact with a heated surface which is maintained at a temperature at or above the boiling point for said material, but below the temperature at which said droplets would undergo pyrolysis before vaporizing. The vapor may be deposited onto a substrate and subsequently polymerized or cross-linked.Type: GrantFiled: July 7, 1987Date of Patent: September 4, 1990Assignee: Spectrum Control, Inc.Inventor: Angelo Yializis
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Patent number: 4937096Abstract: A manufacturing method for a ceramic capacitor superior in breakdown voltage ability, comprising a process of baking opposite electrode on the surface of ceramic dielectric composed mainly of metal oxide and that, simultaneous with or after the above process, of baking in a ring-like shape insulating layers for air cutoff on at least the edges of an electrode.Type: GrantFiled: July 25, 1988Date of Patent: June 26, 1990Assignee: Murata Manufacturing Co., Ltd.Inventors: Hajime Arakawa, Osamu Yamaoka, Motoaki Kakio
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Patent number: 4861416Abstract: A method and apparatus are described which facilitate the growing of silicon ribbon. A container for molten silicon has a pair of passages in its bottom through which filaments extend to a level above the molten silicon, so as the filaments are pulled up they drag up molten silicon to form a ribbon. A pair of guides surround the filaments along most of the height of the molten silicon, so that the filament contacts only the upper portion of the melt. This permits a filament to be used which tends to contaminate the melt if it is in long term contact with the melt. This arrangement also enables a higher melt to be used without danger that the molten silicon will run out of any bottom hole.Type: GrantFiled: April 4, 1985Date of Patent: August 29, 1989Assignee: The United States of America as represented by the Administrator, National Aeronautics and Space AdministrationInventor: Andrew D. Morrison
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Patent number: 4735824Abstract: A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.Type: GrantFiled: May 23, 1986Date of Patent: April 5, 1988Assignee: Kabushiki Kaisha ToshibaInventors: Kikuo Yamabe, Keitaro Imai
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Patent number: 4720393Abstract: For the manufacture of an electrically conducting layer in the form of a coating on a base or in the form of a free bearing film, a liquid product is prepared consisting of water, a water-soluble polymer dissolved therein, a pyrrole compound dissolved in the water or present therein in undissolved state in the form of pyrrole, N-methylpyrrole or a mixture of pyrrole and N-methylpyrrole and a substance dissolved therein, such as a ferric compound, with the ability to give an electrically conducting polymerized pyrrole upon polymerization of the pyrrole compound. When the pyrrole compound in the liquid product has been transformed into a polymerized pyrrole, the liquid product is applied on a base and the water is thereafter brought to depart while leaving a layer on the base. The layer can be left as a permanent coating on the base or be removed from there while forming a free bearing film.Type: GrantFiled: October 8, 1986Date of Patent: January 19, 1988Assignee: ASEA AktiebolagInventor: Robert Bjorklund
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Patent number: 4664943Abstract: A method of forming external electrodes at both ends of chip parts while elastically holding the chip parts.Type: GrantFiled: November 15, 1984Date of Patent: May 12, 1987Assignee: Murata Manufacturing Co., Ltd.Inventors: Koichi Nitta, Kazuma Kabuta, Masami Yamaguchi, Tadahiro Nakagawa, Katsuyuki Moriyasu
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Patent number: 4615088Abstract: A metalized film for constructing capacitors formed from a flexible dielectric support medium comprising on at least one of its faces metalized parallel strips partially covered by lacquer strips parallel to the preceding ones, two successive metalized strips being partially covered by a lacquer strip whereas two successive lacquer strips partially cover the same metalized strip.Type: GrantFiled: June 25, 1984Date of Patent: October 7, 1986Assignee: LCC-CICE Compagnie Europeenne De Composants ElectroniquesInventors: Daniel Bernard, Jean C. Dubois
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Patent number: 4567059Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 10.00 parts by weight of a glass frit such as, typically, that of PbO-B.sub.2 O.sub.3 -SiO.sub.2 composition, and a vehicle such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the glass frit. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The capacitors or varistors having their conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those having their conductors or electrodes fabricated from a conventional silver paste.Type: GrantFiled: July 5, 1983Date of Patent: January 28, 1986Assignee: Taiyo Yuden Co., Ltd.Inventors: Nobutatsu Yamaoka, Kazuo Sasazawa
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Patent number: 4511601Abstract: A method of providing a copper metallization on a dielectric or semiconductive body, and a dielectric or semiconductive body having a metallization consisting essentially of copper. According to the method, a mixture of copper oxide powder and 0 to 15 weight percent reduction-resistant glass frit is dispersed in an organic vehicle and a solvent to produce a paste. The paste is applied to the body to provide a coating thereon. The coating is dried to remove the solvent, and then the coated body is fired in an oxidizing atmosphere at a temperature below the melting temperature of the glass frit to remove the organic vehicle. Finally, the coated body is fired a second time in an atmosphere which is reducing to the copper oxide but substantially nonreducing to the glass frit. The second firing is at a temperature from 700.degree. to 1050.degree. C. for from 120 to 15 minutes to convert the copper oxide to copper metal.Type: GrantFiled: May 13, 1983Date of Patent: April 16, 1985Assignee: North American Philips CorporationInventors: James R. Akse, Stanley A. Long
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Patent number: 4466841Abstract: A cathode electrode of copper-based material adapted for use in an electrical device is provided with a deposit of silver coated with a finely divided electrically conductive material such as graphite palladium or platinum. The silver deposit is formed by reacting a dilute solution of sodium-silver cyanide with the copper-based cathode electrode. When utilized in an electrolytic capacitor, the cathode electrode helps to increase the capacitance of the cathode electrode and the contact of the copper-based material to an acid electrolyte is uniformly distributed over a large area to provide extended operation with high ripple current with deep cycles of charge and discharge.Type: GrantFiled: September 19, 1983Date of Patent: August 21, 1984Assignee: Emhart Industries, Inc.Inventor: Charles W. Walters