Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 15.00 parts by weight of an organic titanium compound such as, typically, tetrakisstearoxytitanium, and a vehicle, such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the organic titanium compound. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those fabricated from the familiar silver paste.

Abstract: A holder holding capacitor elements is transported by a conveyor and brought into an electrolyte impregnating tank, which is then closed up by a cover which is secured to a carrier movable laterally by a linkage and is moved vertically by a swingable link. A vacuum pump is operated to vacuumize the electrolyte impregnating tank, and then an electrolyte to supplying circuit is operated to supply the electrolyte into the tank of a predetermined vacuum, so that the capacitor elements may be impregnated with the electrolyte by the minus pressure of vacuum. An absorbing device with a pump is operated to absorb the extra electrolyte around the capacitor elements which are placed in the device.

Abstract: A system for producing electrolyte impregnated capacitor elements comprises a reforming device for reforming the leads of capacitor elements which are brought thereto, a clutch device for clutching the reformed capacitor elements, an aligning device for aligning a predetermined number of the reformed capacitor elements, a holding device holding the aligned capacitor elements, an electrolyte impregnating vessel receiving the aligned capacitor elements to impregnate with the electrolyte, a blow-off device for blowing off the excess amount of electrolyte from the electrolyte impregnating capacitor elements, and transmission devices each operated in a predetermined sequence to transmit the capacitor elements between the above mentioned capacitor element treating devices.

Abstract: Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer is formed by LPCVD using silane and phosphine at a temperature in the range from about 570 degrees C. to 595 degrees C.These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.

Abstract: A step-over connection in a monolithic device including laterally spaced alizations having upper surfaces at one or more levels above a supporting substrate and a dielectric layer over one of the metalizations. The connection is in the form of a metal bridge spanning the space between the metalizations, and is formed by successive steps of providing a first resist layer, forming openings therein, etching away an area of dielectric layer, gold plating pillars on the exposed metalization surfaces, sputtering a gold film on the first resist layer and exposed pillars, providing a second resist layer with a pillar connecting bridge pattern opening, gold plating the bridge connection on the exposed sputtered gold film, and removing the resist layers and excess gold film.

Abstract: A method is described for plating the inner and outer circumferences of a cylindrical dielectric element used in an isolator, and for then assembling the dielectric element with other components to complete the isolator. The dielectric element is first sensitized and activated so that a subsequently applied plating will adhere thereto. The end faces of the dielectric element are then covered with a plating resist, and the element is immersed in a metal plating bath to plate the inner and outer circumferences of the dielectric element. Having been plated, the dielectric element and other components of the isolator are assembled within a hollow connector and joined thereto using a solder sheath.

Abstract: An activator composition paste includes a homogeneous dispersion of a palladium and commensurate amounts of silicon and of zinc. A screen printed layer of this paste is applied to a ceramic capacitor body to form electrodes, terminations or both. The body is heated to 615.degree. C. and subsequently electroless nickel plated providing excellent electrical and mechanical connection of the plated nickel to the ceramic.

Abstract: Formulations for a variety of air sintered ceramic barrier layer capacitors are provided wherein from 0.3 to 1.7 mole % of donor material is added to a strontium titanate and the relative amounts of strontium and titanium have been adjusted so that large-small cation balance and charge balance may be achieved by strontium vacancies, e.g. ##EQU1## These low cost materials have large grains and exhibit high dielectric constants.

Abstract: A donor modified strontium titanate formulated to become conductive when sintered in air, is further modified with a minute quantity of manganese and sintered to maturity in a nitrogen atmosphere. A paste including silver particles, and oxides of bismuth and copper is applied to two major portions of the body. The coated body is heated at about 920.degree. C. to oxidize the grain boundaries and to form silver electrodes tightly adhered to the body.

Abstract: A process of coating an electric component with a setting artificial resin by dipping the component into the liquid resin-hardener compound and curing the deposited layer by the application of heat, comprising heating said component before dipping said component into said resin-hardener compound.

Abstract: A method for producing boundary layer semiconductor ceramic capacitors comprises firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere, heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics, and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies and is characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with power of an insulatorizing agent with stirring in a neutral or oxidizing atmosphere at a temperature ranging from 950.degree. to 1300.degree. C. As a semiconductor ceramic material, there may be used semiconductor ceramics of a barium titanate system, or of a strontium titanate system, or a complex semiconductor ceramic mainly comprising barium titanate or calcium titanate and strontium titanate.

Abstract: A method of fabricating film circuits whereby thick film crossunders may be included with thin film capacitors (22) on a single substrate (10). At least one dielectric layer (12) is formed on the crossunder electrode (11) and a layer capable of smoothing irregularities (13) is also formed in the area of capacitor formation. Firing of the capacitor underlayer is compatible with the dielectric layer. A layer such as beta tantalum (14) is formed over essentially the entire circuit and etched from the contact areas (21) of the crossunder electrode. The layer is oxidized to form a protective layer (15) for the previously deposited layers as well as an underlay for subsequently formed thin film components.

Abstract: Powder is coated with valve-metal by rotating it in a drum 15 so that it is presented to valve-metal vapor derived by evaporation of a source of valve-metal. In the case of coating with aluminum, the vapor may be produced by directing aluminum wire 10 on to a heater 11, and oxygen or air is admitted to control agglomerate formation. Aluminum and tantalum coating are both described using electron beam evaporators.

Abstract: A process for coating a particulate insulating material, e.g. alumina, with a uniform layer of a valve metal. The particles are exposed to a gaseous nitrogen compound, or to nitrogen gas together with hydrogen and a volatile halide of the valve metal. It is thought that nitrogen provides nucleation of the surface for subsequent metal deposition. The coated powder may be used in the fabrication of electrolytic capacitor anodes.

Abstract: An electrical component which includes a circuit element such as a solid electrolytic capacitor arranged within a metallic casing or can. One electrical lead of the component is connected to the casing; the other lead is connected to the circuit element and extends through an opening in the casing. This opening is filled with a first plastic material to seal the circuit element within the casing against environmental conditions. A conformable coating of a second plastic material is disposed over the outer surface of the casing and extends over the edges of the casing into the opening so as to join with the first plastic material disposed in the opening.

Abstract: Method for manufacturing a ceramic electronic component such as a voltage-dependent non-linear resistor element and a semiconductive ceramic capacitor is disclosed, in which a precisely uniform metal coating is formed on a surface of a ceramic and the metal coating is then heat treated to convert the metal of the metal coating to a metal compound to form a metal compound coating on the surface of the ceramic and/or diffuse a portion of or all of the metal coating into the ceramic, for attaining completely different electric properties than those of untreated ceramic. The present method is particularly useful in the application to a semiconductive ceramic capacitor.

Abstract: A plurality of porous valve-metal pellets, having the conventional oxide dielectric film, solid electrolyte, metallic counterelectrode, and insulative resin protective layer over the counterelectrode, are suspended by their anode risers from processing bars held in a carrier rack. Anode and cathode end-cap terminals are subsequently formed over opposite ends of each pellet, while the pellets are still suspended from the processing bars held in the carrier rack, by the selective steps of dipping and removing and curing of silver-loaded paint, and then nickel immersion plating over the cured silver caps, and then coating the nickel film with solder.

Abstract: A process for preparing porous high surface over metal films for electrolytic capacitor manufacture. An anodizable metal is evaporated in a vacuum chamber to form a metal vapor, the metal vapor being directed towards a foil substrate. The deposition angle is chosen such that the evaporated metal condenses as a porous surface layer.The coated foil may be used in the manufacture of electrolytic capacitors by anodizing the coating, applying contacts, and winding up the foil.

Abstract: A major amount of strontium titanate is modified with additions of lanthanide series rare earth aluminates, titanates and transition metal oxides to provide sintered semiconductive ceramics with enhanced temperature and voltage stability. The modified strontium titanate ceramic, having the general formula:(1-x)SrTiO.sub.3 +x(1-y)[(1-z)LnAlO.sub.3 +zLn.sub..66 TiO.sub.3]+xyLnMO.sub.3,is coated with a fritted electrode material and fired at a temperature below the melting point of the electrode material to cause the frit to diffuse into the ceramic and form insulating boundaries around the ceramic grains. Ceramic capacitors so formed are characterized by their excellent electrical properties, particularly their improved temperature stability as evidenced by extremely low changes in capacitance with temperature.

Abstract: A method for encasing an electric component of a type comprising a body and at least one pair of lead wires extending outwardly therefrom in the same direction. An outer protective coating or casing enclosing the body therein is formed by dipping the electric component into a solution of chlorinated hydrocarbon containing either a chained aliphatic hydrocarbon or a higher fatty acid to form a film covering the entire surface of the body and the surfaces of portions of the lead wires adjacent the body, then dipping the electric component into a solvent to remove the film except for that covering the surface of a portion of the body adjacent the lead wires and also that covering the surfaces of that portions of the lead wires, and finally dipping the electric component into a coating solution.

Abstract: A porous anode valve-metal pellet is anodized, impregnated with a manganese nitrate solution containing a surfactant, and subjected to pyrolysis to convert the manganese nitrate to manganese dioxide. The surfactant reduces ridging of the manganese dioxide during pyrolysis.

Abstract: A method is disclosed for the manufacture in electric thin film R and RC circuits of a conductor crossover. A first conductor is structured at the crossover from a TaAl double layer. A portion of the top layer of the double layer is converted to a TaAl oxide and an SiO.sub.2 layer is then applied over the TaAl oxide as a double dielectric. A second conductor is then structured over the double dielectric.

Abstract: The disclosure concerns a process for covering or coating an electric component with an insulating coating. The electric component has electric leads extending away therefrom beyond an edge thereof. The electric component is first wetted with a solvent. Thereafter a jet of a liquid covering or coating material is directed against at least one surface of the electric component and it migrates over the edge of the component also to the opposite surface of the electric component. The orientation of the electric component with respect to the jet flow and the placement of the jet flow with respect to the electric component is described.

Abstract: A means and method are provided for applying material to a substrate. In the means and the method, material is dispensed onto belt means and the belt means brought in contact with the substrate so as to transfer at least some of the material onto the substrate. The invention is particularly adaptable to the application of a band of silicone type material to a riser of an anode to be used in an electrolytic film-forming metal capacitor, the band of silicone type material helping to protect the anode riser during capacitor manufacture.

Abstract: A method of forming capacitor anodes is described wherein leads of film forming metal, preferably headed are subjected to plasma spray deposition of film forming metal, preferably at a flame temperature of about 10,000.degree. to 20,000.degree. C. to form capacitor anodes.

Abstract: An improved capacitor, especially of the tantalum capacitor type, wherein a very small particle silver metal powder is impregnated into a porous metal anode member, say of tantalum. The resulting capacitor has a much reduced resistance in the non-dielectric components of the capacitor without any substantial decrease in the desirably-high reistance across the dielectric component of the capacitor. The process of forming such a capacitor is relatively inexpensive and allows one to avoid a number of manufacturing steps and reduce the manufacturing cost of the improved capacitor even though it contains a relatively large amount of silver metal.

Abstract: A solid electrolytic capacitor comprises an anode body made of a valve action metal the surface of which is coated with an anodically oxidized film, a manganese oxide layer formed thereon through repeatedly dipping, into a high viscosity slurry of manganese oxide producing solution consisting of Mn(NO.sub.3).sub.2 --Mn(CH).sub.2 --NH.sub.4 NO.sub.3 --H.sub.2 O followed by thermal decomposition, and a cathode layer formed thereon. Through the improvement of said solution a required amount of uniform and dense manganese oxide layer is produced with a minimum number of repetitions of the above process so that a solid electrolytic capacitor having an improved characteristic can be provided.

Abstract: Disclosed are humidity sensor structures, and fabrication techniques, which result in uniform and reliable humidity sensing, reliable electrical connections in small sensors, and simplified and inexpensive manufacture.

Abstract: Formed porous tantalum pellets each having an extending anode wire are lowered part way into a molten compound such as napthalene. The napthalene wicks its way into substantially all of the pellet pores. Upon removal from the bath the napthalene freezes within each pellet. A liquid insulating material is applied to the anode wire while being masked from entering the porous pellet by the napthalene. The napthalene is subsequently vaporized from the pores and thereafter manganous nitrate is introduced into the pellet and is pyrolyzed to form MnO.sub.2.

Abstract: A cathode electrode of copper-based material adapted for use in an electrical device is provided with a layer composed of at least one compound from the group of copper selenide, copper telluride and copper sulfide by the reaction between the copper-based cathode electrode and an appropriate reactive compound of selenium, tellurium or sulfur. When utilized in an electrolytic capacitor, the layer on the cathode electrode helps to depolarize the capacitor and helps to increase the capacitance of the cathode electrode.

Abstract: In a solid electrolyte capacitor, a metallic cathode collector layer is in direct contact with an electrolyte layer which is formed of densely accumulated manganese dioxide particles of 0.1 - 50 .mu.m. The manganese dioxide layer is formed by performing pyrolysis of manganese nitrate in a semi-closed heating chamber of a radiant furnace to offer a resistance to the outflow from the chamber of gaseous decomposition products. The collector layer is formed by spraying, preferably by plasma spraying, of a metal powder typified by copper powder.

Abstract: An alkyl compound of zinc is reacted with alkyl compounds or alkoxyl compounds of boron and silicon in the presence of oxygen, thereby to deposit on a substrate zinc borosilicate glass film through a chemical vapor deposition process. The outlet nozzle of a raw material supply conduit for introducing the raw material compounds into a reaction zone is opened in the direction substantially in parallel with a surface of the substrate on which the glass film is to be deposited so that raw materials may be well mixed at the reaction zone. The glass film thus produced has a uniform thickness and a homogeneous composition of the constituents over an area at least of 40 mm extending from the nozzle and is suited for use as protection films for semiconductor devices and dielectric layer for a thin film capacitor on an industrial base.

Abstract: A method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described. The tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen content of .beta. tantalum to that for tantalum nitride. A tantalum pentoxide film with dielectric properties is grown on the tantlum electrode by oxidation. At least, the tantalum electrode and the dielectric are subjected to tempering. The dielectric is then covered with another electrode.

Abstract: Before impregnation with fluid a capacitor roll, or a transformer core and coil, is filled with a monomeric gas that is thereafter polymerized, in situ, in a plasma discharge. Formation of solid polymer occurs at the regions of most intense electric field, thereby raising both corona-start and operating voltage for these devices.

Abstract: A manganese dioxide layer of improved quality is formed on the surface of a dielectric oxide coating on a valve-metal substrate by repeating sequential procedures of immersing the substrate in an aqueous solution of manganese nitrate and heating the wet substrate to cause pyrolytic decomposition of manganese nitrate several times on condition that the heating is carried out at least once in a furnace wherein hot air flows and at least once in a semi-closed radiant furnace wherein the decomposition proceeds under a positive pressure of a small magnitude due to prolonged retention of gaseous decomposition products in the heating chamber.

Abstract: A manganese dioxide layer of improved quality is formed on an anodized valve metal substrate by repeating only a few times the steps of immersing the substrate in an aqueous solution of manganese nitrate and heating the wet substrate to cause pyrolytic decomposition of manganese nitrate to manganese dioxide in a semiclosed radiant furnace, wherein the decomposition proceeds under a positive pressure of a small magnitude due to prolonged retention of gaseous decomposition products.

Abstract: A flexible belt carrier is provided for use in an apparatus for spray soldering the ends of roll capacitor blanks. The belt may be constructed of silicon rubber and has apertures extending transversely through the belt which are positioned very near to one of its surfaces. A slit or opening is made at each aperture through the web separating the aperture from the nearest surface of the belt. The belt moves in a sinuous path such that when flexed around a pulley in one direction the edges of the slit spread and gap, allowing ready insertion of a blank. When the belt passes over another pulley, the belt flexes in the opposite direction so as to foreshorten the slit surface. The slits are made at an angle acute to the surface of the belt. Therefore, as their surface foreshortens, the walls of the web formed at the slit cam against one another and overlap, thereby fully and tightly encircling the capacitor blank, exposing only the ends thereof.

Abstract: A thin film capacitor and resistor is disclosed, each capacitor being formed by a structure including a metallic film on an insulating substrate, the metallic film having an oxidized surface formed by anodizing, an oxide layer on the oxidized surface of the metallic film, and a pair of spaced-apart conductor layers over the oxide layer, each resistor being formed by a resistive film on the substrate and a pair of spaced-apart conductor layers connecting with the ends of the resistive film. In the manufacture of the circuit, a predeposited substrate is produced that may be utilized by circuit designers in the subsequent fabrication of custom microcircuits. A heat treating technique is employed in trimming the resistors of the circuit.

Abstract: A protective layer containing polytetrafluoroethylene (PTFE) is provided over the riser of an anode having a porous film-forming metal anode body to render the riser non-wetting to a solution of manganese nitrate and thereby help prevent the formation of MnO.sub.2 on the riser during the subsequent pyrolysis step in the process of making a capacitor. The protective layer also helps to prevent mechanical damage to the anode during assembly of the capacitor. The protective layer over the anode riser may be applied by means such as dipping a wetted anode in a suspension containing particulate PTFE or by masking the anode body with a liquid and then spraying the riser with binderless material containing PTFE. The preferred embodiment employs high pressure spraying of the material containing PTFE over the anode riser.

Abstract: A Solid State Electrolytic Cell Gas Sensor is presented which is capable of measuring various toxic or combustible gases in low concentrations (0-5 PPM) up to and including high concentrations such as 0-20 percent by volume. The sensor exhibits excellent specificity to the gas designated to be detected. The sensor causes the dissociation of the gases into charged species such as ions and complex ions and does not operate by changing its electro-conductivity in response to the adsorption of the gas. The sensor has an electrical signal which is a function of the type and concentration of gas and which is also a function of the collection of ions by transport process. The solid state material from which the sensor is fabricated is produced by the method of addition of one or more metal oxides to a non-metal oxide with a general formula of MxOy - NpOq. M can be a metal from the transition elements and N can be a non-metal of group III and IV from the periodic table.

Abstract: A method of producing a tantalum dry-electrolytic capacitor which comprises a sintered tantalum anode having applied thereto, by a forming process, an dielectric oxide layer and a semiconducting manganese dioxide cathode layer, with the latter being coated with a graphite layer serving as current supply, in which, after formation of the manganese dioxide layer, a thin layer of manganese dioxide is removed from the surface thereof by chemical treatment, following which the cathode is coated with the desired graphite layer.