Ge- Or Si-base Component Patents (Class 428/641)
  • Patent number: 10094236
    Abstract: The disclosure relates generally to recession resistant gas turbine engine articles that comprise a silicon containing substrate, and related coatings and methods. The present disclosure is directed, inter alia, to an engine article comprising a silicon substrate which is coated with a chemically stable porous oxide layer. The present disclosure also relates to articles comprising a substrate and a bond coat on top comprising a two phase layer of interconnected silicon and interconnected oxide, followed by a layer of silicon. The present disclosure further relates to a recession resistant article comprising an oxide in a silicon containing substrate, such that components of the silicon containing substrate is interconnected with oxides dispersed in the substrate and form the bulk of the recession resistant silicon containing article.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: October 9, 2018
    Assignee: GENERAL ELECTRIC COMPANY
    Inventor: Krishan Lal Luthra
  • Patent number: 9771826
    Abstract: Components having an environmental barrier coating and a sintered layer overlying the environmental barrier coating, the sintered layer defining an outer surface having a lower surface roughness than the environmental barrier coating. The sintered layer is formed from a slurry applied to and then sintered on the environmental barrier coating. The sintered layer comprises a primary material, at least one sintering aid dissolved in the primary material, and optionally a secondary material. The sintering aid contains at least one doping composition. The primary material is a rare earth disilicate or a rare earth monosilicate and is doped with the doping composition so as to be either a doped rare earth disilicate or a doped rare earth monosilicate. The optional secondary material is a reaction product of the primary material and any of the sintering aid not dissolved in the primary material.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: September 26, 2017
    Assignee: General Electric Company
    Inventors: Glen Harold Kirby, Brett Allen Boutwell, Jessica Licardi Subit
  • Patent number: 9714578
    Abstract: A method of depositing abradable coating on an engine component is provided wherein the engine component is formed of ceramic matrix composite (CMC) and one or more layers, including at least one environmental barrier coating, may be disposed on the outer layer of the CMC. An outermost layer of the structure may further comprise a porous abradable layer that is disposed on the environmental barrier coating and provides a breakable structure which inhibits blade damage. The abradable layer may be gel-cast on the component and sintered or may be direct written by extrusion process and subsequently sintered.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: July 25, 2017
    Assignee: General Electric Company
    Inventor: Glen Harold Kirby
  • Patent number: 9696471
    Abstract: An integrated swept wavelength optical source uses a filtered ASE signal with an optical amplifier and tracking filter. This source comprises a micro optical bench, a source for generating broadband light, a first tunable Fabry Perot filter, installed on the bench, for spectrally filtering the broadband light from the broadband source to generate a narrowband tunable signal, an amplifier, installed on the bench, for amplifying the tunable signal, and a second tunable Fabry Perot filter, installed on the bench, for spectrally filtering the amplified tunable signal from the amplifier. A self-tracking arrangement is also possible where a single tunable filter both generates the narrowband signal and spectrally filters the amplified signal. In some examples, two-stage amplification is provided. The use of a single bench implementation yields a low cost high performance system. For example, polarization control between components is no longer necessary.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: July 4, 2017
    Assignee: Axsun Technologies LLC
    Inventors: Dale C. Flanders, Walid A. Atia, Mark E. Kuznetsov
  • Patent number: 9315904
    Abstract: The loss of aluminum content during the laser (20) deposition of superalloy powders (16) is accommodated by melting pure aluminum foil (14) with the superalloy powder to increase a concentration of aluminum in the melt pool (24) so that the resulting layer of deposited material (26) has a desired elemental composition Foils, screens or strips of any material may be melted with powders to achieve any desired cladding composition, including a graded composition across a thickness of a clad layer (50).
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: April 19, 2016
    Assignee: Siemens Energy, Inc.
    Inventors: Gerald J. Bruck, Ahmed Kamel
  • Patent number: 9129919
    Abstract: Processes for the treatment of silicon wafers to form a high density non-uniform distribution of oxygen precipitate nuclei therein such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafers form oxygen precipitates in the bulk and a precipitate-free zone near the surface are disclosed. The processes involve activation of inactive oxygen precipitate nuclei by performing heat treatments between about 400° C. and about 600° C. for at least about 1 hour.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: September 8, 2015
    Assignee: SunEdison Semiconductor Limited
    Inventors: Robert J. Falster, Vladimir V. Voronkov, Marco Cornara, Daniela Gambaro, Massimiliano Olmo
  • Publication number: 20150107508
    Abstract: A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 ?m or greater is 20% or more of the crystal observed at the face, excluding the core line portion.
    Type: Application
    Filed: February 27, 2013
    Publication date: April 23, 2015
    Inventors: Haruyuki Ishida, Tetsuya Imura, Yasumasa Aimoto
  • Publication number: 20150064496
    Abstract: The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×106 ?m3. The present invention further provides a manufacturing method for the single crystal copper and a substrate comprising the same.
    Type: Application
    Filed: August 28, 2014
    Publication date: March 5, 2015
    Inventors: Chih CHEN, King-Ning TU, Chia-Ling LU
  • Patent number: 8961810
    Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: February 24, 2015
    Inventors: Natalio Mingo Bisquert, Nobuhiko Kobayashi, Marc Plissonnier, Ali Shakouri
  • Publication number: 20150004432
    Abstract: In a Ti—Ni alloy thin film, Ti and Ni are mixed and deposited on a base material by putting a Ti target and an Ni target at a predetermined distance from each other in a co-sputtering apparatus and simultaneously sputtering the targets by applying different voltages. A method of fabricating a Ti—Ni alloy thin film using co-sputtering includes a target preparing step that prepares a Ti target, a Ni target and a base material, a target disposing step that puts the Ti target and the Ni target at a predetermined distance from each other in a co-sputtering apparatus, an apparatus setting step that sets work conditions of the co-sputtering apparatus, and a thin film depositing step that forms a Ti—Ni alloy thin film with Ti and Ni mixed on the base material by operating the co-sputtering apparatus.
    Type: Application
    Filed: August 13, 2012
    Publication date: January 1, 2015
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Seong Woong Kim, Jong Taek Yeom, Jae Keun Hong, Jeoung Han Kim, Chan Hee Park
  • Patent number: 8905293
    Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: December 9, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping-Yin Liu, Li-Cheng Chu, Hung-Hua Lin, Shang-Ying Tsai, Yuan-Chih Hsieh, Jung-Huei Peng, Lan-Lin Chao, Chia-Shiung Tsai, Chun-Wen Cheng
  • Publication number: 20140248509
    Abstract: Compositions are provided that exhibit an austenitic nickel microstructure. The compositions comprise Ni, Cr, Mo and at least one element selected from the group consisting of Al, Si, and Ti. Feedstock having the composition may be in the form of a cored wire or wires, a solid wire or wires, or a powder.
    Type: Application
    Filed: May 15, 2014
    Publication date: September 4, 2014
    Applicant: Scoperta, Inc.
    Inventors: Justin Lee Cheney, Grzegorz Jan Kusinski
  • Publication number: 20140227553
    Abstract: Disclosed are a preparation method of a steel product capable of local reinforcement using laser heat treatment, and a heat hardened steel used in the method. According to the present invention, the preparation method of a steel part comprises the following steps: (a) preparing a material comprising 0.1-0.5 wt % of C, 0.1-0.5 wt % of Si, 0.5-3.0 wt % of Mn, 0.1 wt % or less of P, 0.05 wt % or less of S, 0.01-1.0 wt % of Cr, 0.1 wt % or less of Al, 0.2 wt % or less of Ti, 0.0005-0.08 wt % of B, and the balance of Fe and inevitable impurities; (b) preparing a formed product by forming the material into a predetermined shape; and (c) locally reinforcing the high strength portion by carrying out laser heat treatment on a portion requiring high strength at the formed product.
    Type: Application
    Filed: October 17, 2011
    Publication date: August 14, 2014
    Applicant: HYUNDAI HYSCO
    Inventors: Hee-Joong Im, Seung-Man Nam, Bo-Ryong Lee, Kyung-Bo Kim, Youn-Il Jung
  • Patent number: 8628857
    Abstract: A composite material plate comprising a plurality of hard ceramic stubs with silicon rich metal inclusions in a metal-ceramic, heterogeneous poly-phase matrix and a method of fabrication thereof comprising the steps of fabricating green ceramic stubs; densifying; optionally wrapping carbon fibers therearound and arranging the green ceramic stubs into a closely packed array with organic binder, pyrrolizing and Impregnating a silicon based metal matrix by reactive sintering.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: January 14, 2014
    Inventor: Gigi Simovich
  • Patent number: 8592049
    Abstract: Hot dip galvanized steel sheet excellent in shapeability and plateability comprised of high strength steel sheet according to the present invention can be provided containing, by mass % about, C: 0.05 to 0.25%, Si: 0.3 to 2.5%, Mn: 1.5 to 2.8%, P: 0.03% or less, S: 0.02% or less, Al: 0.005 to 0.5%, N: 0.0060% or less and the balance of Fe and unavoidable impurities. The exemplary steel sheet can have thereon a galvanized layer containing, e.g., about Al: 0.05 to 10 mass % and Fe: 0.05 to 3 mass % and the balance of Zn and unavoidable impurities. Such exemplary hot dip galvanized steel sheet can have oxides containing Si in an average content of about 0.6 to 10 mass % at the crystal grain boundaries and in the crystal grains at the sheet steel side 5 ?m or less from the interface between the high strength steel sheet and the plating layer and by the presence of Fe—Zn alloy with an average grain size of about 0.5 to 3 ?m at the plating side.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: November 26, 2013
    Assignee: Nippon Steel & Sumitomo Metal Corporation
    Inventors: Kazuhiko Honda, Tetsuo Nishiyama, Yoshihiro Suemune, Takeo Itoh, Koki Tanaka, Yoichi Ikematsu
  • Publication number: 20130309524
    Abstract: Polycrystalline silicon in the form of chunks packed in plastic bags containing a mass of at least 5 kg, including chunks of size from 20 to 200 mm, wherein any fines fraction in the plastic bag is less than 900 ppmw, preferably less than 300 ppmw, more preferably less than 10 ppmw. The polycrystalline silicon, after comminution of a silicon rod obtained by CVD (Siemens process), is sorted and classified, optionally dedusted and then metered and packed. Metering and packing units include elements for removing fines or small particles during metering and during packing. The packing unit includes an energy absorber or a reservoir vessel which enables sliding or slipping of the silicon chunks into the plastic bag. Gas flow generated within the plastic bag after the bag has been filled transports the dust or small particles out of the bag, and these are sucked out with a suction device.
    Type: Application
    Filed: May 14, 2013
    Publication date: November 21, 2013
    Applicant: Wacker Chemie AG
    Inventors: Matthias VIETZ, Reiner PECH
  • Publication number: 20130302639
    Abstract: A zirconium alloy for use in nuclear fuel assemblies is provided, which provides increased resistance against oxidation and corrosion and also improved bonding with parent material, because pure metallic material such as silicon (Si) or chromium (Cr) is evenly coated on the surface of the parent material by plasma spraying. Because the plasma spray coating used to coat the pure metallic material on the zirconium alloy does not require vacuum equipment and also is not limited due to the shape of the coated product, this is particularly useful when evenly treating the surface of the component such as 4 m-long tube or spacer grip arrangement which is very complicated in shape. Furthermore, because the coated zirconium alloy confers excellent resistance to oxidation and corrosion under emergency such as accident as well as normal service condition, both the economic and safety aspects of nuclear fuel are improved.
    Type: Application
    Filed: November 7, 2012
    Publication date: November 14, 2013
    Applicants: KOREA HYDRO AND NUCLEAR POWER CO., LTD., KOREA ATOMIC ENERGY RESEARCH INSTITUTE
    Inventors: Korea Atomic Energy Research Institute, Korea Hydro and Nuclear Power Co., Ltd.
  • Publication number: 20130164556
    Abstract: An exemplary method for manufacturing a circuit board includes, firstly, providing a substrate made of heat conductive, electrically insulative material. Then a copper layer is formed on the substrate. After that, nickel is plated on the copper layer to form a nickel layer. Finally, gold is and plated on the nickel layer to form a gold layer.
    Type: Application
    Filed: August 15, 2012
    Publication date: June 27, 2013
    Applicant: FOXSEMICON INTEGRATED TECHNOLOGY, INC.
    Inventors: SUNG-HSIANG YANG, WEI-CHUN YEH, CHENG-CHAO CHAO
  • Publication number: 20130122326
    Abstract: An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.
    Type: Application
    Filed: November 16, 2012
    Publication date: May 16, 2013
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventor: NATIONAL CHIAO TUNG UNIVERSITY
  • Publication number: 20120297982
    Abstract: Embodiments of the invention relate to a method for preparing crystalline metal-organic frameworks (MOFs). The method includes the steps of providing an electrolyte solution in contact with a conductive surface, and applying a current or potential to the conductive surface in contact with the electrolyte solution. The electrolyte solution includes a protonated organic ligand, a metal ion, and a probase. Application of the reductive current or potential to the conductive surface produces the crystalline metal-organic framework (MOF) deposited on the conductive surface. The MOFs produced by the method may be incorporated into a gas separation membrane, a purification filter, and/or a sensor.
    Type: Application
    Filed: April 4, 2012
    Publication date: November 29, 2012
    Applicant: Massachusetts Institute of Technology
    Inventors: Mircea Dinca, Minyuan Li
  • Publication number: 20120270065
    Abstract: The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises: a backing plate, an impurity diffusion prevention layer, comprising thin film consisting of one or more metals selected from Fe, W, Ta, Te, Nb, Mo, S and Si, formed on the backing plate, and an indium target, formed on the impurity diffusion prevention layer.
    Type: Application
    Filed: May 12, 2011
    Publication date: October 25, 2012
    Inventors: Takamasa Maekawa, Toshiya Kurihara, Takashi Kosho
  • Publication number: 20120177945
    Abstract: The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.
    Type: Application
    Filed: March 9, 2012
    Publication date: July 12, 2012
    Applicant: National Taiwan University of Science and Technology
    Inventors: Yee-Wen Yen, Jinn P. Chu, Chon-Hsin Lin, Chun-Lei Hsu, Chao-Kang Li
  • Publication number: 20120164476
    Abstract: A coated article includes a substrate, an anti-corrosion layer formed on the substrate, a decorative layer formed on the anti-corrosion layer. The substrate is made of aluminum or aluminum alloy. The anti-corrosion layer is a silicon layer. The coated article has improved corrosion resistance.
    Type: Application
    Filed: August 19, 2011
    Publication date: June 28, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD .
    Inventors: HSIN-PEI CHANG, WEN-RONG CHEN, HUANN-WU CHIANG, CHENG-SHI CHEN, XIAO-QIANG CHEN
  • Publication number: 20120148870
    Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.
    Type: Application
    Filed: December 9, 2010
    Publication date: June 14, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ping-Yin Liu, Li-Cheng Chu, Hung-Hua Lin, Shang-Ying Tsai, Yuan-Chih Hsieh, Jung-Huei Peng, Lan-Lin Chao, Chia-Shiung Tsai, Chun-Wen Cheng
  • Publication number: 20120127629
    Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.
    Type: Application
    Filed: April 14, 2010
    Publication date: May 24, 2012
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey F. Roeder, Bryan C. Hendrix, Steven M. Bilodeau, Gregory T. Stauf, Tianniu Chen, Thomas M. Cameron, Chongying Xu
  • Publication number: 20120114970
    Abstract: A slurry composition for aluminising a superalloy component is provided, wherein the slurry includes an organic binder and a solid content including aluminium. The slurry further includes hafnium and yttrium. In addition, a superalloy component is provided which includes an aluminide coating. The coating material has at least one layer which includes hafnium and yttrium in addition to aluminium.
    Type: Application
    Filed: February 16, 2010
    Publication date: May 10, 2012
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventor: Paul Matthew Walker
  • Patent number: 8159037
    Abstract: Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: April 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun-sung Woo, Sun-ae Seo, Dong-chul Kim, Hyun-jong Chung, Dae-young Jeon
  • Patent number: 8114526
    Abstract: A composite substrate for superconductors and methods for making the same are described. The composite substrate of the present invention includes at least a core layer having and a sheath layer having a cube texture on at least a portion its surface. In certain embodiments, the core layer can include a nickel-tungsten-molybdenum alloy having about 2-10 atomic percent tungsten and 2-15 atomic percent molybdenum. In some embodiments, the sheath layer can include nickel or a nickel-tungsten alloy having about 0 to 6 atomic percent tungsten. Generally, the core layer is stronger than the sheath layer and an interdiffusion zone can exist between the core layer and the sheath layer.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: February 14, 2012
    Assignee: American Superconductor Corporation
    Inventors: Cornelis Leo Hans Thieme, Elliott D. Thompson
  • Publication number: 20120028073
    Abstract: A process for electroplating high adhesion copper layer on a surface of a highly oxidizable metal in an invariable container, and products produced by this process are provided.
    Type: Application
    Filed: February 11, 2010
    Publication date: February 2, 2012
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Yair Ein-Eli, Nina Sezin, David Starosvetsky
  • Patent number: 8097377
    Abstract: A bi-polar plate is provided for a fuel cell stack. The bi-polar plate has improved surface wettability. The bi-polar plate includes a body including at least approximately ninety percent by weight of a metal and defining at least one flow channel. At least about 0.05 percent and up to 100 percent by weight of silicon is disposed on a surface of the at least one flow channel to form a high energy surface to form a high energy surface for the bi-polar plate. This can be achieved by adding from 0.5 to 10 weight % silicon to the steel. The percent of silicon is pre-determined based on a desired wettability of the high energy surface of the at least one flow channel.
    Type: Grant
    Filed: January 27, 2006
    Date of Patent: January 17, 2012
    Inventors: Keith E. Newman, Mahmoud H. Abd Elhamid, Charles H. Olk, Thomas A. Trabold, Gayatri Vyas
  • Publication number: 20110268993
    Abstract: A silicon/gold (Si/Au) bilayer seed structure is located in a film stack between an amorphous or crystalline lower layer and an upper layer with a well-defined crystalline structure. The seed structure includes a Si layer on the generally flat surface of the lower layer and a Au layer on the Si layer. The Si/Au interface initiates the growth of the Au layer with a face-centered-cubic (fcc) crystalline structure with the (111) plane oriented in-plane. The upper layer grown on the Au layer has a fcc or hexagonal-close-packed (hcp) crystalline structure. If the upper layer is a fcc material its [111] direction is oriented substantially perpendicular to the (111) plane of the Au layer and if the upper layer is a hcp material, its c-axis is oriented substantially perpendicular to the (111) plane of the Au layer.
    Type: Application
    Filed: May 1, 2010
    Publication date: November 3, 2011
    Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
    Inventors: Olav Hellwig, Dieter K. Weller
  • Patent number: 8044465
    Abstract: The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: October 25, 2011
    Assignee: S.O.I.TEC Solicon On Insulator Technologies
    Inventors: Bernard Aspar, Chrystelle Lagahe-Blanchard
  • Patent number: 8039116
    Abstract: Nb—Si based alloy articles comprising a Nb—Si based alloy upon which is disposed an environmentally-resistant coating are described. They include a coating comprising at least one phase selected from the group consisting of M(Al,Si)3, M5(Al,Si)3, and M3Si5Al2, wherein M is one or more of Nb, Ti, Hf, Cr. Such coating can improve the environmental (e.g., in oxidation-promoting environments) resistance of a Nb—Si based alloy and alloy articles. Methods for preparing these articles are described as well.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: October 18, 2011
    Assignee: General Electric Company
    Inventors: Bernard Patrick Bewlay, Ramgopal Darolia, Voramon Supatarawanich Dheeradhada, Richard DiDomizio, Michael Francis Xavier Gigliotti, Joseph David Rigney, Pazhayannur Ramanathan Subramanian
  • Patent number: 7993947
    Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: August 9, 2011
    Assignee: NanoGram Corporation
    Inventors: Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
  • Patent number: 7981520
    Abstract: A coating suitable for use as protective oxide-forming coatings on Nb-based substrates, and particularly monolithic niobium-based alloys, exposed to high temperatures and oxidative environments. The coating contains aluminum, may further contain silicon, and optionally contains niobium, titanium, hafnium, and/or chromium, which in combination form one or more intermetallic phases that promote the formation of a slow-growing oxide scale. The intermetallic phases may be M(Al,Si)3, M5(Al,Si)3, and/or M3Si5Al2 where M is niobium, titanium, hafnium, and/or chromium.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: July 19, 2011
    Assignee: General Electric Company
    Inventors: Bernard Patrick Bewlay, Pazhayannur Ramanathan Subramanian, Joseph David Rigney, Richard DiDomizio, Voramon Supatarawanich Dheeradhada
  • Publication number: 20110151274
    Abstract: A method for forming a nickel aluminide based coating on a metallic substrate includes providing a first source for providing a significant portion of the aluminum content for a coating precursor and a separate nickel alloy source for providing substantially all the nickel and additional alloying elements for the coating precursor. Cathodic arc (ion plasma) deposition techniques may be utilized to provide the coating precursor on a metallic substrate. The coating precursor may be provided in discrete layers, or from a co-deposition process. Subsequent processing or heat treatment forms the nickel aluminide based coating from the coating precursor.
    Type: Application
    Filed: June 30, 2010
    Publication date: June 23, 2011
    Inventors: Brian Thomas Hazel, Don Mark Lipkin, Michael Howard Rucker, Rudolfo Viguie
  • Publication number: 20110143159
    Abstract: Fine-grained (average grain size 1 nm to 1,000 nm) metallic coatings optionally containing solid particulates dispersed therein are disclosed. The fine-grained metallic materials are significantly harder and stronger than conventional coatings of the same chemical composition due to Hall-Petch strengthening and have low linear coefficients of thermal expansion (CTEs). The invention provides means for matching the CTE of the fine-grained metallic coating to the one of the substrate by adjusting the composition of the alloy and/or by varying the chemistry and volume fraction of particulates embedded in the coating. The fine-grained metallic coatings are particularly suited for strong and lightweight articles, precision molds, sporting goods, automotive parts and components exposed to thermal cycling. The low CTEs and the ability to match the CTEs of the fine-grained metallic coatings with the CTEs of the substrate minimize dimensional changes during thermal cycling and prevent premature failure.
    Type: Application
    Filed: February 11, 2011
    Publication date: June 16, 2011
    Applicant: Integran Technologies, Inc.
    Inventors: Gino Palumbo, Jonathan McCrea, Klaus Tomantschger, Iain Brooks, Daehyun Jeong, Dave Limoges, Konstantinos Panagiotopoulos, Uwe Erb
  • Patent number: 7875365
    Abstract: An optical recording medium is provided with inorganic bi-layer films that were prepared by magnetic sputtering. A first recording layer containing an element selected from Si or Ge, and a second recording layer contacts with the first recording layer and containing a primary component selected from Ta, Ni or Mo. This optical media can record information by way of microscopic structure changing of bi-layer recording films after laser irradiation.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: January 25, 2011
    Assignee: CMC Magnetics Corporation
    Inventors: Han Feng Chang, Pang Chi Liu, Chin Yen Yeh, Shih Hsien Ma, Minte Lin, Kuan Lan Fang, Wei Tai Tang, Don Yau Chiang
  • Patent number: 7867627
    Abstract: Functionalized substrates and method of passivating the surface of a substrate to improve the surface by imparting desirable surface properties to improve the performance of a surface, the method steps including exposing the substrate to a chemical vapor deposition process to coat the substrate with silicon, and functionalizing the coated surface by exposing the substrate surface to a binding reagent having at least one unsaturated hydrocarbon group.
    Type: Grant
    Filed: December 13, 2005
    Date of Patent: January 11, 2011
    Assignee: Silcotek Corporation
    Inventors: David A. Smith, Gary A. Barone, Martin E. Higgins
  • Publication number: 20100183895
    Abstract: An optical disc having at least two metal-containing layers with different compositions and partially overlapping areal extents in the plane of the disc and method of forming the disc are described. The optical disc with dual metallization exhibits visually distinct regions suitable for use for identification purposes.
    Type: Application
    Filed: August 20, 2008
    Publication date: July 22, 2010
    Inventors: Justin John Cunningham, Ibsen Lourenco, Holger Hofmann
  • Publication number: 20100055493
    Abstract: Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described.
    Type: Application
    Filed: July 15, 2009
    Publication date: March 4, 2010
    Inventors: Bruce Gardiner Aitken, Charlene Marie Smith
  • Publication number: 20090098407
    Abstract: A laminated structure is formed by stacking a first block member, an intermediate member, and a second block member together in this order, and then mutually joining each of the members. Further, by setting the elastic constant of the intermediate member to be greater than the elastic constants of the first block member and the second block member, deformation of grooves, which are formed in the first block member, is minimized.
    Type: Application
    Filed: September 16, 2008
    Publication date: April 16, 2009
    Applicant: SMC Kabushiki Kaisha
    Inventors: Keiichi MINEGISHI, Yasunori YOSHIDA, Kouji WADA, Youichi KAWAMURA
  • Patent number: 7442444
    Abstract: An article comprising a silicon-containing substrate, a silicide-containing bond coat layer overlying the substrate, and typically an environmental barrier coating overlaying the bond coat layer. An article is also provided wherein the environmental barrier coating comprises: (1) an optional inner silica scale layer overlaying the bond coat layer; (2) intermediate layer overlaying the inner silica scale layer, or the bond coat layer in the absence of the inner silica scale layer, and comprising mullite, or a combination of mullite with a barium strontium aluminosilicate, a yttrium silicate, or a calcium aluminosilicate; and (3) an outer steam-resistant barrier layer overlaying the intermediate layer and consisting essentially of an alkaline earth silicate/aluminosilicate. Processes are also provided for forming the silicide-containing bond coat layer over the substrate, followed by forming the environmental barrier coating over the bond coat layer.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: October 28, 2008
    Assignee: General Electric Company
    Inventors: Brian Thomas Hazel, Irene Spitsberg, Brett Allen Boutwell
  • Publication number: 20080233428
    Abstract: The present invention relates to wear-resistant mechanical parts.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 25, 2008
    Applicant: Skaff Corporation of America, Inc.
    Inventor: Habib Skaff
  • Publication number: 20080206588
    Abstract: A layer sequence (400), comprising an aluminium layer (300), a nickel layer (301), and a nickel layer protection layer (302; 701). The aluminium layer (300) is formable on a substrate (200), the nickel layer (301) is formed on the aluminium layer (300), and the nickel layer protection layer (302; 701) is formed on the nickel layer (301).
    Type: Application
    Filed: June 12, 2006
    Publication date: August 28, 2008
    Applicant: NXP B.V.
    Inventors: Thomas Lange, Joerg Syre, Michael Rother, Torsten Krell
  • Patent number: 7354651
    Abstract: An article comprising a silicon-containing substrate, a silicide-containing bond coat layer overlying the substrate, and an environmental barrier coating (EBC) overlying the bond coat layer, wherein the EBC comprises a corrosion resistant outer layer comprising a corrosion resistant metal silicate. A process is also provided for forming the corrosion resistant outer layer over the silicide-containing bond coat layer.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: April 8, 2008
    Assignee: General Electric Company
    Inventors: Brian Thomas Hazel, Irene Spitsberg, Brett Allen Boutwell
  • Patent number: 7351480
    Abstract: Tubular structures having aspect ratios of at least about 3 and comprising interior surfaces comprising substantially uniform coatings generated from a gaseous precursor material.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: April 1, 2008
    Assignee: Southwest Research Institute
    Inventors: Ronghua Wei, Chistopher Rincon, James Arps
  • Patent number: 7261957
    Abstract: A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: August 28, 2007
    Assignee: Carl Zeiss SMT AG
    Inventors: Frederik Bijkerk, Eric Louis, Andrey E. Yakshin, Peter Cornelis Görts, Sebastian Oestreich, Lambertus Gerhardus Albertus Michael Alink, Jan Verhoeven, Robbert Wilhelmus Elisabeth van de Kruijs
  • Patent number: 7258931
    Abstract: Semiconductor wafers utilize asymmetric edge profiles (EP) to facilitate higher yield semiconductor device processing. These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations adjacent a peripheral edge thereof. These edges profiles are also configured to inhibit redeposition of residue particulates on the top surfaces of the wafers during semiconductor processing steps. Such steps may include surface cleaning and rinsing steps that may include passing a cleaning or rinsing solution across a wafer or batch of wafers that are held by a cartridge and submerged in the solution.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: August 21, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gi-Jung Kim, Woo-Serk Kim, Sang-Mun Chon, Tae-Yeol Heo
  • Patent number: RE40725
    Abstract: A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points such that electrons can transfer between neighboring quantum dots and the electron energy band contains a flat-band structure, where each quantum dot is a structure in which electrons are confined inside a region which is surrounded by high energy potential regions, and the flat-band structure is a band structure in which energy dispersion of electrons has hardly any wave number dependency.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: June 9, 2009
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Hiroyuki Tamura, Kenji Shiraishi, Hideaki Takayanagi