Abstract: Various aspects of the present disclosure provide a device that comprises an electronic device comprising a first device side, a second device side, and a first lateral device side. The example device may, for example, also comprise a substrate comprising a first substrate side, a second substrate side, and a first lateral substrate side. The substrate may, for example, comprise a first conductive pattern, a first barrier structure, and a second conductive pattern. The first conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first barrier structure may, for example, be on the first lateral side of the first conductive pattern. The second conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first lateral side of the second conductive pattern may, for example, be free of a metal barrier structure.

Abstract: A LIDAR system includes a transmitter unit constructed and arranged to generate light and a photodetector structure for detecting received, reflected light. An actively tunable narrow band optical filter structure is located upstream of the photodetector structure to filter out wavelengths of light associated with sunlight prior to being received by the photodetector structure. The filter structure is constructed and arranged to change optical filtering thereof so as to change wavelengths of light permitted to pass there-through. A photodiode detects light passing through the filter structure. A control unit is associated with the photodiode and the filter structure and is constructed and arranged such that based on the light detected by the photodiode, the control unit can cause the filter structure to change the optical filtering thereof by heating or rotating the filter structure so as to compensate for drifting or broadening of a wavelength of the transmitter unit.

Abstract: The present disclosure relates to a light-emitting composition containing a perovskite compound and inorganic fine particles.

Abstract: A method of producing a reduced-defect density crystalline silicon film includes forming a first intrinsic silicon film on a substrate, forming a doped film including silicon or germanium on the first intrinsic silicon film, forming a second intrinsic silicon film on the doped film, and annealing to crystallize the doped film, the second intrinsic silicon film, and the first intrinsic silicon, wherein each film is amorphous at formation, wherein crystallization initiates within the doped film. A method of forming a thin film transistor includes forming an active layer in the crystallized second intrinsic silicon layer by doping the crystallized second intrinsic silicon layer in selected areas to form source and drain regions separated by a channel portion, forming a gate insulator layer on the crystallized second intrinsic silicon layer, and forming a gate electrode pattern over the gate insulator layer.

Abstract: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

Abstract: Various aspects of the present disclosure provide a device that comprises an electronic device comprising a first device side, a second device side, and a first lateral device side. The example device may, for example, also comprise a substrate comprising a first substrate side, a second substrate side, and a first lateral substrate side. The substrate may, for example, comprise a first conductive pattern, a first barrier structure, and a second conductive pattern. The first conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first barrier structure may, for example, be on the first lateral side of the first conductive pattern. The second conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first lateral side of the second conductive pattern may, for example, be free of a metal barrier structure.

Abstract: A nano-twinned copper layer is disclosed, wherein over 50% of a volume of the nano-twinned copper layer comprises a plurality of columnar crystal grains, the plurality of columnar crystal grains connect to each other, at least 70% of the plurality of columnar crystal grains are formed by a plurality of nano-twins stacking in an orientation of a crystal axis, and an angle included between two adjacent columnar crystal grains is greater 20° and less than or equal to 60°. In addition, a method for manufacturing the nano-twinned copper layer and a substrate comprising the same are also disclosed.

Abstract: Known protective layers having a high Cr-content and a silicone in addition, form brittle phases that embrittle further under the influence of carbon during use. The protective layer according to the invention is composed of 22% to 26% cobalt (Co), 10.5% to 12% aluminum (Al), 0.2% to 0.4% Yttrium (Y) and/or at least one equivalent metal from the group comprising Scandium and the rare earth elements, 15% to 16% chrome (Cr), optionally 0.3% to 1.5% tantal, the remainder nickel (Ni).

Abstract: Known protective layers having a high Cr content and additionally a silicon form brittle phases which additionally become brittle under the influence of carbon during use. The protective layer hereof has a composition 22% to 24% cobalt (Co), 10.5% to 11.5% aluminum (AI), 0.2% to 0.4% yttrium (Y) and/or at least one equivalent metal from the group comprising scandium and the rare earth elements, 14% to 16% chrome (Cr), optionally 0.3% to 0.9% tantalum, the remainder nickel (Ni).

Abstract: A semiconductor crystal containing a clathrate compound represented by the following formula (I), the semiconductor crystal having one end portion and the other end portion, wherein the one and the other end portions differ in concentration of at least one element in the formula (I): AxDyE46-y??(I) wherein A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, D represents at least one element selected from the group consisting of B, Ga, and In, E represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 or more and 8 or less, and y is 14 or more and 20 or less.

Abstract: Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1?m or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1?m or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

Abstract: The disclosure relates generally to recession resistant gas turbine engine articles that comprise a silicon containing substrate, and related coatings and methods. The present disclosure is directed, inter alia, to an engine article comprising a silicon substrate which is coated with a chemically stable porous oxide layer. The present disclosure also relates to articles comprising a substrate and a bond coat on top comprising a two phase layer of interconnected silicon and interconnected oxide, followed by a layer of silicon. The present disclosure further relates to a recession resistant article comprising an oxide in a silicon containing substrate, such that components of the silicon containing substrate is interconnected with oxides dispersed in the substrate and form the bulk of the recession resistant silicon containing article.

Abstract: Components having an environmental barrier coating and a sintered layer overlying the environmental barrier coating, the sintered layer defining an outer surface having a lower surface roughness than the environmental barrier coating. The sintered layer is formed from a slurry applied to and then sintered on the environmental barrier coating. The sintered layer comprises a primary material, at least one sintering aid dissolved in the primary material, and optionally a secondary material. The sintering aid contains at least one doping composition. The primary material is a rare earth disilicate or a rare earth monosilicate and is doped with the doping composition so as to be either a doped rare earth disilicate or a doped rare earth monosilicate. The optional secondary material is a reaction product of the primary material and any of the sintering aid not dissolved in the primary material.

Abstract: A method of depositing abradable coating on an engine component is provided wherein the engine component is formed of ceramic matrix composite (CMC) and one or more layers, including at least one environmental barrier coating, may be disposed on the outer layer of the CMC. An outermost layer of the structure may further comprise a porous abradable layer that is disposed on the environmental barrier coating and provides a breakable structure which inhibits blade damage. The abradable layer may be gel-cast on the component and sintered or may be direct written by extrusion process and subsequently sintered.

Abstract: An integrated swept wavelength optical source uses a filtered ASE signal with an optical amplifier and tracking filter. This source comprises a micro optical bench, a source for generating broadband light, a first tunable Fabry Perot filter, installed on the bench, for spectrally filtering the broadband light from the broadband source to generate a narrowband tunable signal, an amplifier, installed on the bench, for amplifying the tunable signal, and a second tunable Fabry Perot filter, installed on the bench, for spectrally filtering the amplified tunable signal from the amplifier. A self-tracking arrangement is also possible where a single tunable filter both generates the narrowband signal and spectrally filters the amplified signal. In some examples, two-stage amplification is provided. The use of a single bench implementation yields a low cost high performance system. For example, polarization control between components is no longer necessary.

Abstract: The loss of aluminum content during the laser (20) deposition of superalloy powders (16) is accommodated by melting pure aluminum foil (14) with the superalloy powder to increase a concentration of aluminum in the melt pool (24) so that the resulting layer of deposited material (26) has a desired elemental composition Foils, screens or strips of any material may be melted with powders to achieve any desired cladding composition, including a graded composition across a thickness of a clad layer (50).

Abstract: Processes for the treatment of silicon wafers to form a high density non-uniform distribution of oxygen precipitate nuclei therein such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafers form oxygen precipitates in the bulk and a precipitate-free zone near the surface are disclosed. The processes involve activation of inactive oxygen precipitate nuclei by performing heat treatments between about 400° C. and about 600° C. for at least about 1 hour.

Abstract: A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 ?m or greater is 20% or more of the crystal observed at the face, excluding the core line portion.

Abstract: The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×106 ?m3. The present invention further provides a manufacturing method for the single crystal copper and a substrate comprising the same.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: In a Ti—Ni alloy thin film, Ti and Ni are mixed and deposited on a base material by putting a Ti target and an Ni target at a predetermined distance from each other in a co-sputtering apparatus and simultaneously sputtering the targets by applying different voltages. A method of fabricating a Ti—Ni alloy thin film using co-sputtering includes a target preparing step that prepares a Ti target, a Ni target and a base material, a target disposing step that puts the Ti target and the Ni target at a predetermined distance from each other in a co-sputtering apparatus, an apparatus setting step that sets work conditions of the co-sputtering apparatus, and a thin film depositing step that forms a Ti—Ni alloy thin film with Ti and Ni mixed on the base material by operating the co-sputtering apparatus.

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract: Compositions are provided that exhibit an austenitic nickel microstructure. The compositions comprise Ni, Cr, Mo and at least one element selected from the group consisting of Al, Si, and Ti. Feedstock having the composition may be in the form of a cored wire or wires, a solid wire or wires, or a powder.

Abstract: Disclosed are a preparation method of a steel product capable of local reinforcement using laser heat treatment, and a heat hardened steel used in the method. According to the present invention, the preparation method of a steel part comprises the following steps: (a) preparing a material comprising 0.1-0.5 wt % of C, 0.1-0.5 wt % of Si, 0.5-3.0 wt % of Mn, 0.1 wt % or less of P, 0.05 wt % or less of S, 0.01-1.0 wt % of Cr, 0.1 wt % or less of Al, 0.2 wt % or less of Ti, 0.0005-0.08 wt % of B, and the balance of Fe and inevitable impurities; (b) preparing a formed product by forming the material into a predetermined shape; and (c) locally reinforcing the high strength portion by carrying out laser heat treatment on a portion requiring high strength at the formed product.

Abstract: A composite material plate comprising a plurality of hard ceramic stubs with silicon rich metal inclusions in a metal-ceramic, heterogeneous poly-phase matrix and a method of fabrication thereof comprising the steps of fabricating green ceramic stubs; densifying; optionally wrapping carbon fibers therearound and arranging the green ceramic stubs into a closely packed array with organic binder, pyrrolizing and Impregnating a silicon based metal matrix by reactive sintering.

Abstract: Hot dip galvanized steel sheet excellent in shapeability and plateability comprised of high strength steel sheet according to the present invention can be provided containing, by mass % about, C: 0.05 to 0.25%, Si: 0.3 to 2.5%, Mn: 1.5 to 2.8%, P: 0.03% or less, S: 0.02% or less, Al: 0.005 to 0.5%, N: 0.0060% or less and the balance of Fe and unavoidable impurities. The exemplary steel sheet can have thereon a galvanized layer containing, e.g., about Al: 0.05 to 10 mass % and Fe: 0.05 to 3 mass % and the balance of Zn and unavoidable impurities. Such exemplary hot dip galvanized steel sheet can have oxides containing Si in an average content of about 0.6 to 10 mass % at the crystal grain boundaries and in the crystal grains at the sheet steel side 5 ?m or less from the interface between the high strength steel sheet and the plating layer and by the presence of Fe—Zn alloy with an average grain size of about 0.5 to 3 ?m at the plating side.

Abstract: Polycrystalline silicon in the form of chunks packed in plastic bags containing a mass of at least 5 kg, including chunks of size from 20 to 200 mm, wherein any fines fraction in the plastic bag is less than 900 ppmw, preferably less than 300 ppmw, more preferably less than 10 ppmw. The polycrystalline silicon, after comminution of a silicon rod obtained by CVD (Siemens process), is sorted and classified, optionally dedusted and then metered and packed. Metering and packing units include elements for removing fines or small particles during metering and during packing. The packing unit includes an energy absorber or a reservoir vessel which enables sliding or slipping of the silicon chunks into the plastic bag. Gas flow generated within the plastic bag after the bag has been filled transports the dust or small particles out of the bag, and these are sucked out with a suction device.

Abstract: A zirconium alloy for use in nuclear fuel assemblies is provided, which provides increased resistance against oxidation and corrosion and also improved bonding with parent material, because pure metallic material such as silicon (Si) or chromium (Cr) is evenly coated on the surface of the parent material by plasma spraying. Because the plasma spray coating used to coat the pure metallic material on the zirconium alloy does not require vacuum equipment and also is not limited due to the shape of the coated product, this is particularly useful when evenly treating the surface of the component such as 4 m-long tube or spacer grip arrangement which is very complicated in shape. Furthermore, because the coated zirconium alloy confers excellent resistance to oxidation and corrosion under emergency such as accident as well as normal service condition, both the economic and safety aspects of nuclear fuel are improved.

Abstract: An exemplary method for manufacturing a circuit board includes, firstly, providing a substrate made of heat conductive, electrically insulative material. Then a copper layer is formed on the substrate. After that, nickel is plated on the copper layer to form a nickel layer. Finally, gold is and plated on the nickel layer to form a gold layer.

Abstract: An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

Abstract: Embodiments of the invention relate to a method for preparing crystalline metal-organic frameworks (MOFs). The method includes the steps of providing an electrolyte solution in contact with a conductive surface, and applying a current or potential to the conductive surface in contact with the electrolyte solution. The electrolyte solution includes a protonated organic ligand, a metal ion, and a probase. Application of the reductive current or potential to the conductive surface produces the crystalline metal-organic framework (MOF) deposited on the conductive surface. The MOFs produced by the method may be incorporated into a gas separation membrane, a purification filter, and/or a sensor.

Abstract: The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises: a backing plate, an impurity diffusion prevention layer, comprising thin film consisting of one or more metals selected from Fe, W, Ta, Te, Nb, Mo, S and Si, formed on the backing plate, and an indium target, formed on the impurity diffusion prevention layer.

Abstract: The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.

Abstract: A coated article includes a substrate, an anti-corrosion layer formed on the substrate, a decorative layer formed on the anti-corrosion layer. The substrate is made of aluminum or aluminum alloy. The anti-corrosion layer is a silicon layer. The coated article has improved corrosion resistance.

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.

Abstract: A slurry composition for aluminising a superalloy component is provided, wherein the slurry includes an organic binder and a solid content including aluminium. The slurry further includes hafnium and yttrium. In addition, a superalloy component is provided which includes an aluminide coating. The coating material has at least one layer which includes hafnium and yttrium in addition to aluminium.

Abstract: Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.

Abstract: A composite substrate for superconductors and methods for making the same are described. The composite substrate of the present invention includes at least a core layer having and a sheath layer having a cube texture on at least a portion its surface. In certain embodiments, the core layer can include a nickel-tungsten-molybdenum alloy having about 2-10 atomic percent tungsten and 2-15 atomic percent molybdenum. In some embodiments, the sheath layer can include nickel or a nickel-tungsten alloy having about 0 to 6 atomic percent tungsten. Generally, the core layer is stronger than the sheath layer and an interdiffusion zone can exist between the core layer and the sheath layer.

Abstract: A process for electroplating high adhesion copper layer on a surface of a highly oxidizable metal in an invariable container, and products produced by this process are provided.

Abstract: A bi-polar plate is provided for a fuel cell stack. The bi-polar plate has improved surface wettability. The bi-polar plate includes a body including at least approximately ninety percent by weight of a metal and defining at least one flow channel. At least about 0.05 percent and up to 100 percent by weight of silicon is disposed on a surface of the at least one flow channel to form a high energy surface to form a high energy surface for the bi-polar plate. This can be achieved by adding from 0.5 to 10 weight % silicon to the steel. The percent of silicon is pre-determined based on a desired wettability of the high energy surface of the at least one flow channel.

Abstract: A silicon/gold (Si/Au) bilayer seed structure is located in a film stack between an amorphous or crystalline lower layer and an upper layer with a well-defined crystalline structure. The seed structure includes a Si layer on the generally flat surface of the lower layer and a Au layer on the Si layer. The Si/Au interface initiates the growth of the Au layer with a face-centered-cubic (fcc) crystalline structure with the (111) plane oriented in-plane. The upper layer grown on the Au layer has a fcc or hexagonal-close-packed (hcp) crystalline structure. If the upper layer is a fcc material its [111] direction is oriented substantially perpendicular to the (111) plane of the Au layer and if the upper layer is a hcp material, its c-axis is oriented substantially perpendicular to the (111) plane of the Au layer.

Abstract: The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: a step of forming, on a first support, patterns in a first material, a step of forming a semiconductor layer, between and on said patterns, a step of assembling said semiconductor layer with a second support.

Abstract: Nb—Si based alloy articles comprising a Nb—Si based alloy upon which is disposed an environmentally-resistant coating are described. They include a coating comprising at least one phase selected from the group consisting of M(Al,Si)3, M5(Al,Si)3, and M3Si5Al2, wherein M is one or more of Nb, Ti, Hf, Cr. Such coating can improve the environmental (e.g., in oxidation-promoting environments) resistance of a Nb—Si based alloy and alloy articles. Methods for preparing these articles are described as well.

Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.

Abstract: A coating suitable for use as protective oxide-forming coatings on Nb-based substrates, and particularly monolithic niobium-based alloys, exposed to high temperatures and oxidative environments. The coating contains aluminum, may further contain silicon, and optionally contains niobium, titanium, hafnium, and/or chromium, which in combination form one or more intermetallic phases that promote the formation of a slow-growing oxide scale. The intermetallic phases may be M(Al,Si)3, M5(Al,Si)3, and/or M3Si5Al2 where M is niobium, titanium, hafnium, and/or chromium.

Abstract: A method for forming a nickel aluminide based coating on a metallic substrate includes providing a first source for providing a significant portion of the aluminum content for a coating precursor and a separate nickel alloy source for providing substantially all the nickel and additional alloying elements for the coating precursor. Cathodic arc (ion plasma) deposition techniques may be utilized to provide the coating precursor on a metallic substrate. The coating precursor may be provided in discrete layers, or from a co-deposition process. Subsequent processing or heat treatment forms the nickel aluminide based coating from the coating precursor.

Abstract: Fine-grained (average grain size 1 nm to 1,000 nm) metallic coatings optionally containing solid particulates dispersed therein are disclosed. The fine-grained metallic materials are significantly harder and stronger than conventional coatings of the same chemical composition due to Hall-Petch strengthening and have low linear coefficients of thermal expansion (CTEs). The invention provides means for matching the CTE of the fine-grained metallic coating to the one of the substrate by adjusting the composition of the alloy and/or by varying the chemistry and volume fraction of particulates embedded in the coating. The fine-grained metallic coatings are particularly suited for strong and lightweight articles, precision molds, sporting goods, automotive parts and components exposed to thermal cycling. The low CTEs and the ability to match the CTEs of the fine-grained metallic coatings with the CTEs of the substrate minimize dimensional changes during thermal cycling and prevent premature failure.

Abstract: An optical recording medium is provided with inorganic bi-layer films that were prepared by magnetic sputtering. A first recording layer containing an element selected from Si or Ge, and a second recording layer contacts with the first recording layer and containing a primary component selected from Ta, Ni or Mo. This optical media can record information by way of microscopic structure changing of bi-layer recording films after laser irradiation.

Abstract: Functionalized substrates and method of passivating the surface of a substrate to improve the surface by imparting desirable surface properties to improve the performance of a surface, the method steps including exposing the substrate to a chemical vapor deposition process to coat the substrate with silicon, and functionalizing the coated surface by exposing the substrate surface to a binding reagent having at least one unsaturated hydrocarbon group.