Abstract: A vehicle-mounted camera and a mobile body that improve the quality of a captured image are provided. The vehicle-mounted camera includes a lens arranged closest to a subject side and a housing that supports the lens. The lens is at least partially subjected to a surface treatment that changes its water-contact characteristics, or the housing has at least a shape to change its water-contact characteristics or is at least subjected to a surface treatment that changes the water-contact characteristics.

Abstract: An ablation layer for a photosensitive resin for a relief printing plate, the ablation layer containing at least an acid-modified polymer and an infrared-absorbing agent and having a layer acid value as defined below of 2 mg KOH/g or more and 400 mg KOH/g or less, and a neutralized salt ratio as defined below of 0.9 or less, wherein the Layer acid value=(Acid value of the acid-modified polymer)×(Mass ratio of the acid-modified polymer to an entire ablation layer); and wherein the Neutralized salt ratio=(Number of moles of polymer wherein acid in the acid-modified polymer exists in neutralized salt state)/(Total number of moles of the acid-modified polymer).

Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, Wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not contained

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract: A lithographic printing plate precursor including a photopolymerisable coating and an overcoat layer provided on top of said layer, characterized in that the overcoat layer includes a compound comprising at least one moiety having a structure according to Formula (I): (I).

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

Abstract: An ablation layer for a photosensitive resin for a relief printing plate, the ablation layer containing at least an acid-modified polymer and an infrared-absorbing agent and having a layer acid value as defined below of 2 mg KOH/g or more and 400 mg KOH/g or less, and a neutralized salt ratio as defined below of 0.9 or less, wherein the Layer acid value=(Acid value of the acid-modified polymer)×(Mass ratio of the acid-modified polymer to an entire ablation layer); and wherein the Neutralized salt ratio=(Number of moles of polymer wherein acid in the acid-modified polymer exists in neutralized salt state)/(Total number of moles of the acid-modified polymer).

Abstract: There is provided anti-reflective coating forming composition containing a reaction product of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.

Abstract: Provided are a decoration sheet and a method for producing same. The decoration sheet sequentially includes a thermosetting resin layer, a deposition layer, and a base layer. The thermosetting resin layer has a micropattern on a surface thereof, and the elongation rate of the sheet is 200% to 300%. The method includes forming a photocurable imprint film having a first pattern on a first surface thereof, forming a thermosetting resin layer having a second pattern, which has a reverse phase to the first pattern, on a first surface thereof, forming a deposition layer on a second surface of the thermosetting resin layer, forming a substrate layer on one surface of the deposition layer, and releasing the photocurable imprint film from the thermosetting resin layer.

Abstract: The invention relates to a protective layer comprising a photopolymer layer B and an at least partly cured protective layer C, to a process for producing the layer construction according to the invention, to a kit of parts, to the use of an at least partly cured protective layer C for protection of a photopolymer layer B and to optical displays and security documents comprising the layer construction according to the invention.

Abstract: In one aspect, coating compositions are provided that comprise a component a component that comprises one or more silicon, antimony, aluminum, yttrium, cerium, lanthanum, tin, titanium, zirconium, hafnium, indium or zinc compounds. In another aspect, coating compositions are provided that comprise a plurality of discrete particles. Preferred coating compositions of the invention are useful for antireflective purposes, particularly with an underlaying photoresist coating layer, as well as for a barrier layer in immersion lithography.

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.

Abstract: A method for forming a pattern, a structural body, a method for producing a comb-shaped electrode, and a secondary cell. The pattern forming method, in which n patterns (n?2) are formed on a support, includes forming a first resist layer on the support surface; and repeating: forming a guide hole through a kth resist layer by exposure and development, filling a kth pattern material into the guide hole by a screen printing process, removing the kth resist layer, and forming a (k+1)th resist layer on the support and all pattern materials, regarding kth (k=1 to n?1) pattern material and resist layer in order of k=1 to n?1; forming a guide hole and nth pattern material filling similarly, and removing the nth resist layer.

Abstract: New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0 Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

Abstract: A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.

Abstract: There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C8-16 ether compound as a solvent.

Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.

Abstract: A donor substrate for a laser transfer includes a base layer, a primer layer disposed on the base layer, a light-to-heat conversion layer disposed on the primer layer, and an intermediate layer disposed on the light-to-heat conversion layer, where the light-to-heat conversion layer includes graphene.

Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

Abstract: There is provided a patterning process that forms a negative pattern by developing using an organic solvent, using a resist top coat composition that not only reduces the effect from the environment on a resist film and effectively blocks OOB light, but also reduces the film loss of a resist pattern and the bridging between patterns, enhances the sensitivity of the resist film, and suppresses the emission of an outgas from the resist film. The patterning process includes the steps of forming a resist top coat on a photoresist film formed on a substrate, with the resist top coat using as a top base material a polymer having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group, in which m is 1 or 2, and p is 0<p?1.0; performing EUV exposure using an electron beam or having a wavelength of 3 nm to 15 nm; and forming a negative pattern by developing using an organic-solvent-based developer.

Abstract: There are provided a top coat composition and a patterning process using that composition, which reduce the effect of contaminants in the surrounding atmosphere on the resist film in absorbing OOB light and in reducing film loss of the resist pattern and bridging between patterns, and also enhances the sensitivity of the resist film and suppresses the emission of outgas from the resist film. The resist top coat composition of the present invention is formed on a photoresist film formed on a wafer, and is used in a patterning process performed by lithography in which, after exposure, developing is performed. The resist top coat composition contains a polymer as a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown by the following general formula (1), a C6-C10 ether compound, and a C7-C12 hydrocarbon compound, and wherein m is 1 or 2, and p is in the range of 0<p?1.0.

Abstract: It is an object of the present invention to provide a resin printing plate precursor for laser engraving that is able to form a relief by laser engraving, the relief having excellent image reproducibility, and moreover has toughness and improved printing durability. The present invention is a resin printing plate precursor for laser engraving comprising a substrate and a resin layer on the substrate, the resin layer containing: (A) a modified partially saponified polyvinyl acetate having reactive groups in its side chain; (B) a polyamide having basic nitrogen; (C) a compound having a 5- to 7-membered ring and a polymerizable ethylenic double bond; and (D) a photopolymerization initiator.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate including a topographic pattern on a surface of the substrate, wherein the topographic pattern includes a trench and a mesa; forming, on the surface of the substrate, an underlayer including a polymer, wherein the polymer includes a repeating unit derived from a substituted or unsubstituted aromatic vinyl monomer and has an anchoring group; heat-treating the underlayer to anchor the underlayer to the surface of the substrate via the anchoring group; irradiating the heat-treated underlayer with light to form a crosslinked polymer with a crosslink between carbon atoms of main chains of the polymer; forming a block copolymer layer on the underlayer including the crosslinked polymer; and heat-treating the block copolymer layer to form a self-assembled structure of the block copolymer directed by the topographic pattern.

Abstract: Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the organosilane includes a hydrolysable group for facilitating attachment with the porous dielectric, and where the organosilane does not include an alkyl group; and forming a layer as a result of the exposing to seal the porous dielectric. In some embodiments, methods are presented where the organosilane includes: alkynyl groups, aryl groups, fluoroalkyl groups, heteroaryl groups, alcohol groups, thiol groups, amine groups, thiocarbamate groups, ester groups, ether groups, sulfide groups, and nitrile groups. In some embodiments, method further include: removing contamination from the porous dielectric and a conductive region of the substrate prior to the exposing; and removing contamination from the conductive region after the forming.

Abstract: A lithographic printing plate precursor includes a photosensitive layer and a protective layer in this order on a support, the photosensitive layer contains a sensitizing dye, a polymerization initiator, a polymerizable compound and a binder polymer, and the protective layer contains a polymer which has a repeating unit represented by the formula (1) as defined herein and a repeating unit represented by the formula (2) as defined herein in which a sum of the repeating unit represented by the formula (1) and the repeating unit represented by the formula (2) is 90% by mole or more based on total repeating units constituting the polymer.

Abstract: Biomass feedstocks (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful products, such as fuels. For example, systems are described that can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy materials, to produce a product or intermediate, e.g., energy, a food, a fuel, or a material.

Abstract: A linear, branched or cross-linked anionic polyelectrolyte, resulting from the polymerisation, for 100 molar percentage: a) 50% to 99% of monomeric units including a strong, free and partially or completely salified acid function ; b) 1% to 50% of a monomeric units of formula (I): CH2?CH(R1)-C(?O)—O—(CH2)n-CF3 (I), wherein R1 represents H or CH3, and n is 1, 2 or 3; c) optionally greater than 0% to 5% of monomeric units of formula (II): R2-C(?O)—O—[(CH2-CH(R4)-O]m-R3 (II), wherein m is 0 to 50, R2 represents an unsaturated aliphatic monovalent radical with 2 to 4 carbon atoms, R4 represents H, CH3 or CH3CH2 and R3 represents a linear or branched, saturated or unsaturated hydrocarbon aliphatic radical with 8 to 30 carbon atoms, and d) optionally greater than 0% to 5% of at least one monomer with diethylenic or polyethylenic cross-linking. The use thereof as a thickener in topical compositions.

Abstract: A flexographic printing precursor can be imaged and used for flexographic printing. This precursor has at least two laser-engraveable layers, in which the underlying non-printing laser-engraveable layer is more sensitive than the outermost non-metallic printing laser-engraveable layer. The non-printing layer-engraveable layer comprises (1) a first elastomer, (2) a polymer that is nitrocellulose, a polymer comprising a triazene group, a glycidyl azide polymer, or a poly(vinyl nitrate), and (3) a first near-infrared radiation absorber. The outermost non-metallic printing laser-engraveable layer comprises a second elastomer and a second infrared radiation absorber.

Abstract: A lithographic printing plate precursor in a positive-type with an infrared-sensitivity, having a support and an image recording layer provided on the support, the support having a hydrophilic surface, the recording layer having a particular resin, an amphoteric surfactant and/or an anionic surfactant, and an infrared absorbing agent, wherein the particular resin being at least one of resins selected from the group consisting of a polyurethane resin, a poly(vinyl acetal) resin, and maleimide resin A.

Abstract: A print material pattern is formed on a receiver element using an elastomeric relief element having a relief pattern. A printable material composition is applied only to the uppermost relief surface of the elastomeric relief element and at least at least 50 weight % of a carrier liquid is removed. A receiver element has a print material receptive layer having a dry thickness of 0.05-10 ?m and is heated. During contact of the print material composition on the uppermost relief surface and the heated receiver element, the elastomeric relief element is compressed to provide sufficient contact with the receiver element. The elastomeric relief element is then separated from the heated receiver element to leave a pattern of the functional material on the heated receiver element, wherein at least 70 weight % of the original print material is transferred to the heated receiver element.

Abstract: A method of manufacturing a flexographic printing plate includes designing a patterned design that includes a plurality of lines and a plurality of support structures and laser-ablating the patterned design into a thermal imaging layer. A support structure of the plurality of support structures is disposed at an offset relative to a line of the plurality of lines.

Abstract: A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer of hydroxystyrene with acenaphthylene and/or vinylnaphthalene and a mixture of an alcohol solvent and an ether or aromatic solvent.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.

Abstract: The present invention provides a sulfonium salt used in a resist composition that can give a pattern having a high resolution, especially an excellent rectangularity of a pattern form and a small roughness, while not readily generating a defect, in the photolithography using a high energy beam as a light source; a resist composition that contains the sulfonium salt; and a patterning process using this resist composition, wherein the sulfonium salt is shown by the following general formula (1a), wherein each of R and R0 independently represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be optionally substituted by a heteroatom or interposed by a heteroatom.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer comprising recurring units derived from a styrene, indene, benzofuran or benzothiophene monomer having 1,1,1,3,3,3-hexafluoro-2-propanol, and recurring units derived from a styrene, vinylnaphthalene, indene, benzofuran, benzothiophene, stilbene, styrylnaphthalene or dinaphthylethylene monomer and an ether solvent.

Abstract: An imageable material can be used to form a mask image for providing a relief image. This imageable material has a simplified structure and consists essentially of, in order: a transparent polymeric carrier sheet and a barrier layer comprising a first infrared radiation absorbing compound. A first ultraviolet radiation absorbing compound is provided in the transparent polymeric carrier sheet or the barrier layer. A non-silver halide thermally sensitive imageable layer is disposed on the barrier layer and comprises a second infrared radiation absorbing compound and a second ultraviolet radiation absorbing compound. A relief image is formed by imaging the imageable material to form an imaged mask material, exposing a relief-forming material with curing radiation through the imaged mask material to form exposed regions and non-exposed regions, and developing the imaged relief-forming material to form a relief image by removing its non-exposed regions.

Abstract: A thermally-sensitive, positive-working lithographic printing plate precursor can be used to prepare lithographic printing plates using high pH, silicate-free processing solutions. The precursor has a grained an anodized aluminum-containing substrate including a poly(vinyl phosphonic acid) interlayer. A first ink receptive layer, and optionally a second ink receptive layer, is disposed directly on the poly(vinyl phosphonic acid) interlayer. This first ink receptive layer comprises an aromatic acid dye that comprises at least two aromatic groups in an amount of least 0.5 weight %. In addition, the precursor comprises an infrared radiation absorber in one of the layers.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: An apparatus for fabricating an organic light emitting display panel is disclosed. In one embodiment, the apparatus includes i) a first roll around which a film is wound to be continuously drawn, ii) a second roll arranged to face the first roll and around which the film is continuously wound, iii) a plurality of chambers disposed between the first and second rolls and through which the film passes, and in which laser induced thermal imaging (LITI) is performed on a substrate by forming a transfer layer on the film, and iv) a gate unit installed at least one of the chambers and disposed at at least one of a film inlet and a film output of the chambers that are installed, to maintain a substantially vacuum state in the chambers during passing of the film.

Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.

Abstract: A method for removing a moistening liquid from a moistened medium includes bringing at least one surface of the moistened medium into contact with a heating liquid. The heating liquid is warmed to a temperature greater than a moistening-liquid boiling point. Heat is transferred from the warmed heating liquid to the moistening liquid, thereby vaporizing the moistening liquid and removing it from the moistened medium.

Abstract: The present invention provides an acid generator generates a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat: To provide a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of LER and a depth of focus and can be effectively and widely used particularly without degradation of a resolution, a chemically amplified resist composition using the same, and a patterning process.

Abstract: A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

Abstract: Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/?m or greater with respect to 193-nm incident light.

Abstract: Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.