Abstract: To thicken a resist pattern to be thickened to thereby easily form a fine pattern exceeding an exposure limit of optical source of conventional exposure devices, a process forms a resist pattern to be thickened by patterning a resist on an underlying object; applying a surfactant composition containing at least a surfactant on the resist pattern to be thickened; and applying a resist pattern thickening material containing at least a resin and a surfactant thereonto. The resist pattern to be thickened is thus thickened to form a fine pattern having a narrowed pitch.

Abstract: Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.

Abstract: An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.

Abstract: To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

Abstract: A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.

Abstract: Negative-working imageable element can be used to provide lithographic printing plates. The imageable element has a suitable radiation-sensitive imageable layer and a water-soluble overcoat disposed on the imageable layer. This overcoat comprises at least one poly(vinyl alcohol) having a saponification degree of at least 90%, an alkoxylation product of an alkanol, and either a 2-sulfonato succinic acid dialkylester or an alkoxylation product of a 1,4-butanediol.

Abstract: Flexographic printing plates and other relief images can be formed from a laser-ablatable element having a laser-ablatable layer that is from about 300 to about 4,000 ?m thickness. The laser-ablatable layer includes a film-forming material that is a laser-laser-ablatable material or the film-forming material has dispersed therein a laser-ablatable material. The laser-ablatable material is a polymeric material that when heated to 300° C. at a rate of 10° C./minute, loses at least 60% of its mass to form at least one predominant low molecular weight product. The laser-ablatable material also comprises at least 0.01 weight % of a depolymerization catalyst that is a Lewis acid or organometallic based catalyst. The element can be imaged by ablation at an energy of at least 1 J/cm2 to provide a relief image.

Abstract: Technologies to form fine resist patterns consistently by solving the problem of poor patterning influenced by a resist-protecting film, are provided. A layer made of a resist (resist layer) is formed on a substrate, a resist-protecting film comprising an antistatic resin and a photo-acid generating agent is formed on the resist layer, and active-energy rays are selectively irradiated over the resist-protecting film, so that a resist pattern is formed by developing the resist.

Abstract: The present invention provides a photosensitive flexographic printing original plate provided with a heat sensitive mask layer having high light blocking effect and durability yet prepared as a thin film. A photosensitive flexographic printing original plate including at least (A) a supporting member, (B) a photosensitive resin layer, (C) a protective layer and (D) a heat sensitive mask layer that are successively laminated, wherein the heat sensitive mask layer (D) contains carbon black and, as a dispersion binder therefor, a butyral resin as well as polyamide containing polar group selected from the group consisting of polyamide containing a tertiary amine group, polyamide containing a quaternary ammonium salt group, polyamide containing an ether group and polyamide containing a sulfonic group.

Abstract: A heat-sensitive positive-working lithographic printing plate precursor comprising (1) a support having a hydrophilic surface or which is provided with a hydrophilic layer, (2) a heat-sensitive coating, comprising an underlayer on said support and thereon an upperlayer, an IR absorbing agent in at least one of said underlayer and upperlayer, a phenolic resin in said upperlayer, and a first polymer in said underlayer, characterized in that said first polymer is an alkaline soluble polymer comprising a first sulfonamide containing monomeric unit having a specified structure according to formula I or formula II and a second amide containing monomeric unit having a specified structure according to formula III. The printing plates show an improved chemical resistance of the coating and a reduced undercutting of the image forming parts of the coating.

Abstract: A plate carries a solvent-soluble, radiation-polymerizable, oleophilic resin coating non-ionically adhered on a hydrophilic substrate, which can be imagewise exposed to polymerizing radiation and then directly processed by the application of disruptive mechanical forces such as compression or tension to remove the unimaged areas as undissolved particles, using pressurized water and brushing pre-press, or the tack of the ink on-press.

Abstract: A lithographic printing plate precursor is provided that includes, above a support, a photosensitive layer including (i) a binder polymer, (ii) an ethylenically unsaturated compound, and (iii) a polymerization initiator, the ethylenically unsaturated compound (ii) including a compound represented by Formula (1) below. (In Formula (1), L denotes an (m+n)-valent linking group, the Ds independently denote a group selected from the group consisting of groups represented by Formulae (A) to (D) below, the Rs independently denote a monovalent substituent, m denotes an integer of 1 to 20, and n denotes an integer of 2 to 20.) (In Formulae (A) to (D), X, Y, and Z independently denote an oxygen atom, a sulfur atom, or NR17, R4 to R14 and R17 independently denote a hydrogen atom or a monovalent substituent, R15 denotes a hydrogen atom or a methyl group, R16 denotes a monovalent substituent, and k denotes an integer of 0 to 4.

Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided. The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).

Abstract: The invention relates to photopolymerizable flexographic printing elements which contain ethylenically unsaturated, alicyclic monomers and hard flexographic printing plates, in particular cylindrical continuous seamless flexographic printing plates, which can be produced therefrom.

Abstract: A photosensitive resin composition is provided that is highly safe, provides a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability. According to a photosensitive resin composition including, in addition to an onium fluorinated alkyl fluorophosphate based cation polymerization initiator having a specific structure, a specified solvent or a specified sensitizing agent as essential components, a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and also is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability.

Abstract: A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer.

Abstract: Single- and multi-layer positive-working imageable elements include an ink receptive outer layer that includes inorganic, non-metallic, inert discrete particles, such as nano-sized silica, aluminum oxide, or titanium dioxide particles. The presence of these particles in the outermost layer improves the abrasion and scratch resistance of the elements.

Abstract: The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.

Abstract: A photosensitive lithographic printing plate precursor for infrared laser includes in the following order: a support having a hydrophilic surface; a lower layer containing a polymer compound having at least a unit derived from a polymerizable monomer represented by the following formula (I); and an upper layer containing a polymer compound having a group represented by the following formula (II) in a side chain, wherein R1 represents a hydrogen atom or a methyl group, R2 represents a methylene group or an ethylene group, R3 represents a methyl group, and X represents O or NH, wherein Z1, Z2 and Z3 each independently represents a hydrogen atom or a monovalent substituent composed of at least one nonmetallic atom.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: A method for preparing lithographic printing plates for on-press development, including sequentially feeding the plates to an imaging station to produce a plurality of latent image reference marks allocated among at least two margins along a respective two sides of the plate, and a latent print image within the margins. The imaged plates are transported from the imaging station to a plate bending station where the short ends of the plate are bent over. Between the imaging station and the bending station, the unimaged areas of the coating in at least two of the margins are removed to reveal the reference marks without developing the latent print image. Preferably, the reference marks are revealed while the plate is temporarily aligned in landscape orientation at stop, such as at the feeder to the bending station.

Abstract: The present invention provides a method of manufacturing a semiconductor device capable of highly detailed patterning using a resist pattern having smoothed wall surfaces and reduced roughness. The method includes the steps of: forming a resist pattern over a base layer; applying a resist pattern smoothing material onto a surface of the resist pattern, thereafter heating and developing; and etching the base layer using the smoothed resist pattern, wherein one of an application thickness and a heat temperature is adjusted so as to smooth at least wall surfaces of the resist pattern. Aspects in which a maximum opening dimension and a minimum opening dimension of the smoothed resist pattern are ±5% of a predetermined opening dimension D (nm), and an average opening dimension Dav. (nm) of the smoothed resist pattern satisfies Dav. (nm)?D (nm)×(90/100), are preferable.

Abstract: A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.

Abstract: A first film-modifying method includes forming a second film on a first film that includes an acid-dissociable group. The second film is an acid transfer resin film that includes a photoacid generator. The second film is exposed via a mask so that the second film generates an acid. The acid generated by the second film is transferred to the first film. The second film is removed.

Abstract: A printing plate assembly for use in flexographic printing application is provided which includes an integral carrier layer, one or more cushion layers, and one or more photopolymer layers. The photopolymer layer(s) in the integral assembly are provided with relief images using digital imaging photopolymerization, which eliminates the need for a back exposure step and provides a precise relief depth for the plate.

Abstract: The method prepares a substrate provided thereon with a first resist film having a first pattern of first pillars spaced at intervals, the pillars having a first height, and forms a second resist film on the substrate. The second resist film is formed by alternately performing, each at least twice, applying of a resist solution to the substrate such that at least the spaces between adjacent first pillars are filled with a resist solution having a thickness smaller than the first height, and by heat-treating of the substrate to solidify the resist solution thus applied, thereby forming a resist layer, whereby the spaces between the adjacent first pillars are filled with resist layers, as the second resist film, having a total thickness at least approximately equal to the first height.

Abstract: An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of ?-position.

Abstract: A negative-working imageable element has an imageable layer and a topcoat layer that contains a composition that will change color upon exposure to imaging infrared radiation. The imageable element can be imaged and developed on-press to provide images with improved contrast for print-out.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: A lithographic printing plate precursor comprising a support, tin image-recording layer which contains (A) an infrared absorbing agent, (B) a radical polymerization initiator and (C) a radical polymerizable compound and in which an unexposed area can be removed by supplying printing ink and dampening water after exposure, and an overcoat layer in this order, wherein the overcoat layer contains at least two kinds of inorganic stratiform compounds having different crystal structures.

Abstract: The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.

Abstract: A method of making a lithographic printing plate includes the steps of a) providing a lithographic printing plate precursor including (i) a support having a hydrophilic surface or which is provided with a hydrophilic layer, (ii) a coating on the support including a photopolymerizable layer, and, optionally, an intermediate layer between the photopolymerizable layer and the support, b) image-wise exposing the coating in a plate setter, c) optionally, heating the precursor in a preheating unit, and d) developing the precursor off-press in a gumming unit by treating the coating of the precursor with a gum solution, thereby removing the non-exposed areas of the coating from the support, wherein the coating further includes a compound capable of interacting with the support, the compound being present in the photopolymerizable layer and/or in the intermediate layer.

Abstract: A presensitized plate having a long press life and excellent resistance to scum and corrosive micro-stains and capable of on-press development is provided. The presensitized plate includes a photosensitive layer containing (A) a sensitizing dye, (B) a polymerization initiator, (C) a polymerizable compound, and (D) a binder polymer; and a protective layer which are formed on a support in this order. The support is prepared from an aluminum alloy plate containing intermetallic compound particles with a circle equivalent diameter of 0.2 ?m or more at a surface density of 35,000 pcs/mm2 or more and aluminum carbide particles with a maximum length of 1 ?m or more in an amount of up to 30,000 pcs/g.

Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.

Abstract: To provide a method for producing a lithographic printing plate precursor excellent in development property and printing durability, which method restrains mixture of both layers at coating and drying an overcoat layer on an image-recording layer. A method for producing a polymerizable lithographic printing plate precursor including (a) a step of coating a coating solution of an image-recording layer containing (A) a sensitizing dye, (B) a radical polymerization initiator and (C) a radical polymerizable compound on a support, (b) a first drying step of supplying hot air to the image-recording layer, (c) a second drying step of supplying hot air and superheated vapor to the image-recording layer after the first drying step, (d) a step of coating an overcoat layer on the image-recording layer, and (e) a step of drying the overcoat layer.

Abstract: The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

Abstract: An upper layer film-forming composition includes a resin and a solvent component. The resin is soluble in a developer. The solvent component includes first solvent which has a boiling point of 180 to 280° C. at 101.3 kPa and a vapor pressure of 0.001 to 0.1 kPa at 20° C. The upper layer film-forming composition is used to form an upper layer film on a photoresist film.

Abstract: A method for forming a protective film of a fluorine-containing polymer composition excellent in smoothness and adhesiveness on a photoresist. Moreover, there is provided a means for removing the protective film without impairing the underlying photoresist. A polymer coating composition obtainable by dissolving a fluorine-containing polymer compound in a solvent comprising a fluorinated acetal having a specific structure is applied on a photoresist and dried to form a protective film. A fluorinated acetal having the specific structure is suitable as a solvent for being brought into contact with a fluorine-containing polymer film, peeling the film, and forming a photoresist or a lithographic pattern.

Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.

Abstract: Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.

Abstract: To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer. (SiO4/2)a(R1tSiO(4-t)/2)b(O1/2R2)c??general formula (1) where R1 represents at least one of a monovalent organic group, hydrogen atom and hydroxyl group, R2 represents at least one of a monovalent organic group and hydrogen atom (where R1 and R2 each may appear twice or more, and at least one of R1 and R2 contains an alkali-soluble group), “t” represents an integer of 1 to 3, “a,” “b,” and “c” represent the relative proportions of their units (where a?0, b?0 and c?0, and “a,” “b,” and “c” are not 0 at the same time), and (R1tSiO(4-t)/2)b may appear twice or more.

Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.

Abstract: A mask-forming film has a transparent layer between the imageable layer and the carrier sheet, which transparent layer has a refractive index that is lower (by at least 0.04) than that of the carrier sheet or any immediately adjacent layer between it and the carrier sheet. This lower refractive index layer modifies the path of incident radiation during mask image transfer so as to provide steeper shoulder angles in the relief image solid areas. This mask film is used to form a relief image such as in a flexographic printing plate.