Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.

Abstract: The use of biodegradable polymer films in the manufacture of photosensitive relief image printing plates is described, including printing plates produced from liquid photopolymer resins and from sheet polymers as well as direct write/laser engravable printing plates. The biodegradable polymer films can be used as substrate layers, oxygen barrier layers, and coverfilms and, once the printing plates have been used and disposed of, the biodegradable polymer films are capable of decomposing in the environment.

Abstract: A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

Abstract: A protective coating composition comprising a copolymer of an alkali-soluble (?-trifluoromethyl) acrylate and a norbornene derivative as a base polymer, optionally in admixture with a second polymer containing sulfonic acid and/or sulfonic acid amine salt in repeat units is applied onto a resist film. The protective coating is effective in minimizing development defects and forming a resist pattern of improved profile.

Abstract: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Abstract: Overcoating layer compositions that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

Abstract: A method of making a relief image printing element from a photosensitive printing blank is provided. A photosensitive printing blank with a laser ablatable layer disposed on at least one photocurable layer is ablated with a laser to create an in situ mask. The printing blank is then exposed to at least one source of actinic radiation through the in situ mask to selectively cross link and cure portions of the photocurable layer. Diffusion of air into the at least one photocurable layer is limited during the exposing step and preferably at least one of the type, power and incident angle of illumination of the at least one source of actinic radiation is altered during the exposure step. The resulting relief image comprises a plurality of dots and a dot shape of the plurality of dots is produced that is highly resistant to print fluting for printing on corrugated board.

Abstract: A relief (or flexographic) printing precursor has first and second radiation-sensitive layers, or a plurality of radiation-sensitive layers. The first radiation-sensitive layer is sensitive to a first imaging radiation having a first ?max. The second radiation-sensitive layer is disposed on the first radiation-sensitive layer and is sensitive to a second imaging radiation having a second ?max that differs from the first ?max by at least 25 nm. An infrared radiation ablatable layer can be present and is opaque or insensitive to the first and second imaging radiations and contains an infrared radiation absorbing compound. These relief printing precursors can be used to prepare flexographic printing plates, cylinders, or sleeves where the ablatable layer is used to form an integral mask on the element. Use of the invention provides a relief image without any loss in the strength of the small dots and can be carried out using multiple irradiation steps using the same apparatus.

Abstract: The present invention involves a method for making a relief image. A film that includes a carrier sheet and an imageable material is used to form a mask image that is opaque to a curing radiation. In one embodiment, the mask image is formed on the carrier sheet while in another embodiment, the mask image is formed on a receptor sheet. The mask image is then transferred to a photosensitive material, such as a flexographic printing plate precursor. The resulting assembly is exposed to the curing radiation resulting in exposed and unexposed areas of the photosensitive material. The carrier sheet or the receptor sheet may be removed from the mask image either before or after exposure to the curing radiation. Finally, the photosensitive material and mask image assembly is developed with a suitable developer to form a relief image.

Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.

Abstract: On-press development of an imaged printing plate on a plate cylinder, in which ink is applied by an ink form roll, a blanket roll is in contact with the plate, a rubber roll is opposed to the blanket roll, and printable media passes between the blanket roll and the rubber roll. The plate comprises a substrate carrying an imaged coating, in which nonimage areas have cohesion C1, adhesion to the substrate A1, and adhesion to the applied ink A3 and image areas have cohesion C2, adhesion to the substrate A2, and adhesion to the applied ink A4. The ink has cohesion C3 and adhesion A5 to the blanket roll. The nonimage areas have adhesion A6 to the printable medium and the ink has adhesion A7 to the medium. The adhesions and cohesions are such that the blanket roll pulls the ink from the plate and the ink pulls the nonimage areas from the substrate as undissolved particles that are transferred by the blanket with the ink to the printable media.

Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.

Abstract: An anti-reflective coating comprises a plurality of main backbone chains, and at least one long free polymer chain coupled to at least one of the plurality of main backbone chains.

Abstract: A solvent-soluble, radiation-polymerizable, oleophilic resin coating non-ionically adhered on a hydrophilic substrate can be imagewise exposed to polymerizing radiation and then directly processed by the application of disruptive mechanical forces such as compression or tension to remove the unimaged areas as undissolved particles, using pressurized water and brushing pre-press, or the tack of the ink on-press.

Abstract: A lithographic printing plate precursor comprising a support and an image recording layer capable of drawing an image by exposure with an infrared laser, wherein the image recording layer contains (A) an infrared absorbent and (B) an iodonium salt represented by the following formula (1): wherein Ar1 and Ar2 each represents a benzene ring which may have a substituent, provided that two benzene rings are differing in the substituent from each other and a total of Hammett's ? values of substituents on at least one of the benzene rings is a negative value, and Z represents a counter anion.

Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.

Abstract: The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.

Abstract: A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).

Abstract: It is an object of the present invention to provide a method for forming a resist pattern, in which ArF excimer laser light can be utilized as the exposure light for the patterning, the resist patterns can be thickened stably to an intended thickness independently of the sizes of the resist patterns, and the fineness of the fine space patterns can surpass the limit in terms of exposure or resolution of exposure devices. The method for forming a resist pattern of the present invention comprises at least forming a resist pattern, coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.

Abstract: To provide an infrared-sensitive or heat-sensitive lithographic printing plate precursor which has high printing durability and wide development latitude, and also has good developing properties capable of preventing the formation of deposits during the development. In an infrared-sensitive or heat-sensitive lithographic printing plate precursor, comprising a substrate, a first image recording layer formed on the substrate, and a second image recording layer formed on the first image recording layer, the first image recording layer contains a resin which is soluble or dispersible in an aqueous alkali solution, and the second image recording layer contains a polyurethane which has a substituent having an acidic hydrogen atom.

Abstract: A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided.

Abstract: A plate making method of a lithographic printing plate precursor includes: exposing a lithographic printing plate precursor including an image-recording layer and a support; and developing the exposed lithographic printing plate precursor to prepare a lithographic printing plate, wherein the developing includes, in the following order, (i) a process of removing an unexposed area of the image-recording layer with a gum solution, (ii) a process of washing with water and (iii) a process of oil-desensitizing a non-image area with a gum solution.

Abstract: A substrate for use in a lithographic projection apparatus. The substrate includes a sealing coating that covers at least a part of a first interface between two layers on the substrate, or between a layer and the substrate, and does not extend to a central portion of the substrate.

Abstract: A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer.

Abstract: A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.

Abstract: The invention has a support, a recording layer provided on the support, and a protective layer containing a hydrophilic polymer and silica-coated organic resin fine particles provided as the uppermost layer. The organic resin fine particles are preferably composed of at least one resin selected from the group consisting of polyacrylic acid resins, polyurethane resins, polystyrene resins, polyester resins, epoxy resins, phenolic resins, and melamine resins, and the protective layer preferably contains a mica compound.

Abstract: Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/?m or greater with respect to 193-nm incident light.

Abstract: A method of inhibiting photoresist pattern collapse which includes the steps of providing a substrate; providing a photoresist layer on the substrate; exposing and developing the photoresist layer; applying a top anti-reflective coating layer to the photoresist layer; rinsing the photoresist layer; and drying the photoresist layer.

Abstract: The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.

Abstract: A method of developing a laser sensitive lithographic printing plate is described. The plate comprises on a substrate a photosensitive layer soluble or dispersible in ink and/or fountain solution and capable of hardening upon exposure to a laser. The plate is exposed with a laser and deactivated under a safe light or in the dark, and then on-press developed with ink and/or fountain solution preferably under white light. Alternatively, the plate is developed off press with ink and/or fountain solution, or with an organic solvent-based or oil-based liquid or paste and/or an aqueous solution, and then mounted on press for lithographic printing.

Abstract: Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Abstract: In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.

Abstract: A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.

Abstract: The present invention relates to a resist top coat composition and a patterning process adopting such a material, which resist top coat composition is provided for forming a top coat on a photoresist film so as to protect the photoresist film, in liguid immersion photolithography.

Abstract: Developable bottom antireflective coating compositions are provided.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

Abstract: A method of making a lithographic printing plate includes the steps of: (a) providing a lithographic printing plate precursor including a support having a hydrophilic surface or which is provided with a hydrophilic layer, and a coating on the support, the coating including (i) at least one image-recording layer which includes a photocurable composition, and (ii) on top thereof, an oxygen-barrier layer including a water-soluble or water-swellable polymer, b) image-wise exposing the coating, (c) optionally, heating the precursor in a pre-heating unit, (d) treating the image-wise exposed precursor with water or an aqueous solution to remove at least a portion of the oxygen-barrier layer, (e) mounting the treated precursor on a plate cylinder of a lithographic printing press, and (f) developing the precursor by rotating the plate cylinder while feeding dampening liquid and/or ink to the coating, thereby removing non-exposed areas of the image-recording layer.

Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.

Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer.

Abstract: A lithographic printing plate precursor can be used to prepare a printing plate using thermal ablation. The precursor has a non-thermally ablatable first layer on a substrate. Over the first layer is a thermally ablatable outer layer that includes an IR absorbing compound in an ablatable polymeric binder. The first layer includes a sol gel as a continuous inorganic matrix and a discontinuous inorganic phase (inorganic particles) dispersed therein.

Abstract: After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

Abstract: Single- and multi-layer positive-working imageable elements include a first polymeric binder that is soluble in an alkaline developer upon exposure to imaging radiation and a radiation absorbing compound. The first polymeric binder comprises a backbone to which are attached pendant groups represented by the following Structure (I): wherein R1 and R2 are independently hydrogen or alkyl groups having 1 to 8 carbon atoms or aryl groups having 6 or 10 carbon atoms in the carbocyclic ring, L is a direct bond or a linking group having at least 1 carbon atom and optionally one or more nitrogen, oxygen, and sulfur atoms in the linking chain, and X is oxy, thio, or —NR— wherein R is hydrogen or an alkyl group having 1 to 8 carbon atoms or an aryl group having 6 or 10 carbon atoms in the carbocyclic ring.

Abstract: A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects.

Abstract: For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.

Abstract: Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S?) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.

Abstract: The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.

Abstract: A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.

Abstract: Negative-working imageable element can be used to prepared lithographic printing plates. These elements include a water-soluble contrast dye having a ?max in the range of from about 450 to about 750 nm and having an absorption that is lower than 10% with respect to the absorption of the radiation absorbing compound in the element at the wavelength used for exposure. The contrast dye is present in sufficient H-aggregation such that less than 40% of the entire absorption spectrum from the contrast dye is contributed by it in non-H-aggregated form.