Including Material Deposition Patents (Class 430/324)
  • Patent number: 10533249
    Abstract: A method of forming a self-cleaning film system includes depositing a fluorinated material selected from the group consisting of fluorinated organic compounds, fluorinated inorganic compounds, and combinations thereof onto a substrate to form a first layer. The method includes removing a plurality of portions of the first layer to define a plurality of cavities in the first layer and form a plurality of projections that protrude from the substrate. The method includes depositing a photocatalytic material onto the plurality of projections and into the plurality of cavities to form a second layer comprising: a plurality of bonded portions disposed in the plurality of cavities and in contact with the substrate, and a non-bonded portion disposed on the plurality of projections and spaced apart from the substrate. The method also includes, after depositing the photocatalytic material, removing the non-bonded portion to thereby form the self-cleaning film system.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: January 14, 2020
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Gayatri V. Dadheech, Thomas A. Seder, James A. Carpenter
  • Patent number: 10527941
    Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Ya-Ching Chang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 10345093
    Abstract: An arrangement for determining four-dimensional properties of an interface of an object, including a light source includes: a unit for forming photonic jets, a unit for performing large field of view interferometric imaging of the interface and their combination, a unit for passing the light being close to the interface and direct the light to the interface, and an image unit. The arrangement includes a unit for performing phase shifting interferometric imaging of the interface, imaging a unit for receiving light from the interface modulated by e.g. microspheres for forming super-resolution image information by combining light interferometry with the photonic jets, and a processor unit for determining four-dimensional properties of the interface on the basis of the image information formed by the phase shifting interferometric imaging by utilizing effect of the photonic jets. The arrangement also can also include a unit to carry out the measurement using polarized light.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: July 9, 2019
    Assignee: UNIVERSITY OF HELSINKI
    Inventors: Ivan Kassamakov, Edward Haeggström
  • Patent number: 10241394
    Abstract: In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: March 26, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Keiko Morishita, Shingo Kanamitsu, Hideaki Sakurai
  • Patent number: 10126643
    Abstract: The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: November 13, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hung Kung, Hao-Zhang Lai
  • Patent number: 10061199
    Abstract: Patterning methods for creating features with sub-resolution dimensions that are self-aligned in photoresist materials. Techniques include selectably creating antispacers (or spacers) in soft materials, such as photoresist. A photoresist without a photo acid generator is deposited on a relief pattern of a solubility-neutralized photoresist material having a photo acid generator. A photomask then defines where photo acid is generated from a corresponding activating exposure. Photo acid is then diffused into the photoresist, that is free of the photo acid generator, to cause a solubility shift for subsequent development. These selectably-created antispacers can be line segments having widths defined by acid diffusion lengths, which can be widths of 1 nanometer to tens of nanometers. Moreover, the creation of antispacers, their location, and length, can be controlled using a photomask.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: August 28, 2018
    Assignee: Tokyo Electron Limited
    Inventor: Anton J. deVilliers
  • Patent number: 10056256
    Abstract: A photoresist layer is formed over a patternable layer. The photoresist layer containing a negative tone photoresist material. An exposure process is performed to the photoresist layer. A post-exposure bake (PEB) process is performed to the photoresist layer. The photoresist layer is rinsed to develop a photoresist pattern. A primer material is applied to the photoresist pattern. The primer material is configured to: straighten a profile of the photoresist pattern, or to increase a number of deprotected acid labile group (ALG) units of the photoresist material, or to bond with the deprotected ALG units of the photoresist material. After the primer material is applied, the photoresist pattern is enlarged by coating a shrink material over the photoresist pattern, baking the shrink material, and removing portions of the shrink material. The patternable layer is patterned using the enlarged photoresist pattern as a mask.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: August 21, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Han Lai, Ching-Yu Chang
  • Patent number: 10052622
    Abstract: A method of forming a self-cleaning film system includes depositing a perfluorocarbon siloxane polymer onto a substrate to form a first layer. The method includes removing a plurality of portions of the first layer to define a plurality of cavities in the first layer and form a plurality of projections that protrude from the substrate. The method includes depositing a photocatalytic material onto the plurality of projections and into the plurality of cavities to form a second layer comprising: a bonded portion disposed in the plurality of cavities and in contact with the substrate, and a non-bonded portion disposed on the plurality of projections and spaced apart from the substrate. The method also includes, after depositing the photocatalytic material, removing the non-bonded portion to thereby form the self-cleaning film system.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: August 21, 2018
    Assignee: GM Global Technology Operations LLC
    Inventors: Gayatri V. Dadheech, Thomas A. Seder, James A. Carpenter
  • Patent number: 10029507
    Abstract: Identity document comprising a data medium with data. These data comprise an image of a face. This image consists of two component images that are observed at different angles. By simultaneously viewing the two images, the person studying the identity document can obtain further information about the face. This is possible because the two images are applied at a relatively small angle of 5° to 20°.
    Type: Grant
    Filed: April 13, 2006
    Date of Patent: July 24, 2018
    Assignee: SDU Identification B.V.
    Inventor: Jan van den Berg
  • Patent number: 9916973
    Abstract: Provided are photolithographic methods.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: March 13, 2018
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Phillip D. Hustad, Jong Keun Park
  • Patent number: 9804103
    Abstract: A substrate to be inspected includes a first pattern constructed with a repetitive pattern that is not resolved by a wavelength of a light source, and at least one alignment mark that is arranged on the same plane as the first pattern. The alignment mark includes a second pattern constructed with a repetitive pattern that is not resolved by the wavelength of the light source, and a programmed defect that is provided in the second pattern and not resolved by the wavelength of the light source. A focus offset is adjusted such that the strongest signal of the programmed defect is obtained with respect to a base value of a gradation value in an optical image of the programmed defect by capturing the optical image while changing a focal distance between the surface in which the first pattern is provided and an optical system.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: October 31, 2017
    Assignee: Nuflare Technology, Inc.
    Inventors: Hideo Tsuchiya, Riki Ogawa
  • Patent number: 9733568
    Abstract: A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: August 15, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Rem Chen, Ming-Shane Lu, Chung-Hao Chang, Jui-Ping Chuang, Li-Kong Turn, Fei-Gwo Tsai
  • Patent number: 9625760
    Abstract: Provided are method for manufacturing a color filter substrate, color filter substrate and display device. The method includes the following steps: providing a substrate; forming a color pixel unit on the substrate; forming a protective layer on the color pixel unit; coating an alignment film paint and a spacer paint on the protective layer in turn, and forming an alignment film and a spacer via a single patterning process or double patterning processes.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: April 18, 2017
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Jikai Zhang, Tonghua Yang, Jiyu Wan, Dan Wang, Gyuhyun Lee
  • Patent number: 9606432
    Abstract: Fabrication of a circuit structure is facilitated, in which a first exposure of a multi-layer structure is performed using a first mask, which defines positioning of at least one edge of an element to be formed above a substrate of the multi-layer structure. A second exposure of the multi-layer structure is performed using a second mask, which defines positioning of at least one other edge of the element. At least some material of the multi-layer structure is removed using, at least in part, the defined positioning of the at least one edge and the at least one other edges of the element, to form the element above the substrate. In some examples, multiple elements are formed, the multiple elements being hardmask elements to facilitate an etch process to etch a substrate material.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: March 28, 2017
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Guoxiang Ning, Xintuo Dai, Huang Liu, Chin Teong Lim
  • Patent number: 9568464
    Abstract: The invention relates to a method for manufacturing an apparatus for the processing of single molecules. According to this method, a self-assembling resist (155) is deposited on a processing layer (110, PL) and allowed to self-assemble into a pattern of two phases (155a, 155b). One of these phases (155a) is then selectively removed, and at least one aperture is generated in the processing layer (110, PL) through the mask of the remaining resist (155b). Thus apertures of small size can readily be produced that allow for the processing of single molecules (M), for example in DNA sequencing.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: February 14, 2017
    Assignee: Koninklijke Philips N.V.
    Inventors: Pieter Jan Van Der Zaag, Emiel Peeters, Roelof Koole, Falco Cornelius Marinus Jacobus Maria Van Delft
  • Patent number: 9412591
    Abstract: Spacers are formed by pitch multiplication and a layer of negative photoresist is deposited on and over the spacers to form additional mask features. The deposited negative photoresist layer is patterned, thereby removing photoresist from between the spacers in some areas. During patterning, it is not necessary to direct light to the areas where negative photoresist removal is desired, and the clean removal of the negative photoresist from between the spacers is facilitated. The pattern defined by the spacers and the patterned negative photoresist is transferred to one or more underlying masking layers before being transferred to a substrate.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: August 9, 2016
    Assignee: Micron Technology, Inc.
    Inventor: Luan C. Tran
  • Patent number: 9316914
    Abstract: A conductive metal pattern can be formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40, and which is electrolessly plated with a conductive metal.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: April 19, 2016
    Assignee: EASTMAN KODAK COMPANY
    Inventor: Mark Edward Irving
  • Patent number: 9293343
    Abstract: A method of forming patterns of a semiconductor device includes forming a material film on a substrate, forming a hard mask on the material film, forming a first mold mask pattern and a second mold mask pattern on the hard mask, forming a pair of first spacers to cover opposite sidewalls of the first mold mask pattern, and a pair of second spacers to cover opposite sidewalls of the second mold mask pattern, forming a first gap and a second gap to expose the hard mask by removing the first mold mask pattern and the second mold mask pattern, the first gap being formed between the pair of first spacers and the second gap being formed between the pair of second spacers, forming a mask pattern on the hard mask to cover the first gap and expose the second gap, forming an auxiliary pattern to cover the second gap, removing the mask pattern; and forming a hard mask pattern by patterning the hard mask using the first spacers, the second spacers and the auxiliary pattern as a mask.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: March 22, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do-Haing Lee, Il-Sup Kim, Do-Hyoung Kim, Woo-Cheol Lee, Hyun-Ho Jung
  • Patent number: 9273398
    Abstract: A process for metallizing nanomaterial including subjecting nanomaterial in a metallizing solution to microwave radiation; nanomaterial made by such a process; and density gradient separation of such material. This abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure and is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 C.F.R. 1.72(b).
    Type: Grant
    Filed: January 16, 2010
    Date of Patent: March 1, 2016
    Assignee: Nanoridge Materials, Inc.
    Inventors: Clayton Gallaway, Dean Hulsey, Michael Searfass, Joshua Falkner
  • Patent number: 9252027
    Abstract: In accordance with an embodiment, a method of forming a pattern includes forming a first layer on a fabrication target film, making a mold and the first layer push each other to form a protrusion on the fabrication target film, and forming first and second regions, forming a block copolymer layer including first and second blocks in the first and second regions, phase-separating the block copolymer layer, forming second and third layers in the first region, and forming fourth and fifth layers in the second region; and removing the third and fifth layers. The first region is surrounded by the first layer and the protrusion. The second region is surrounded by the first layer and contacts the first region via the protrusion. The third layer is surrounded by the second layer. The fifth layer is surrounded by the fourth layer.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: February 2, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yusuke Kasahara, Kei Kobayashi
  • Patent number: 9247650
    Abstract: A method for making conductive wires is provided. Firstly, an ink having carbon nanotubes is provided. Secondly, a baseline is formed using the ink on a substrate. Thirdly, the baseline is electroless plated.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: January 26, 2016
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Yao-Wen Bai, Rui Zhang, Cheng-Hsien Lin
  • Patent number: 9228039
    Abstract: Crosslinkable reactive polymers comprise -A- and —B— recurring units, arranged randomly along a backbone. The -A- recurring units comprise pendant aromatic sulfonic acid oxime ester groups that are capable of providing pendant aromatic sulfonic acid groups upon irradiation with radiation having a ?max of at least 150 nm and up to and including 450 nm. The -A- recurring units are present in the reactive polymer in an amount of greater than 50 mol % and up to and including 98 mol % based on total reactive polymer recurring units. The —B— recurring units comprise pendant groups that provide crosslinking upon generation of the aromatic sulfonic acid groups in the -A- recurring units. The —B— recurring units are present in an amount of at least 2 mol %, based on total reactive polymer recurring units. These reactive polymers can be used in various pattern-forming methods.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: January 5, 2016
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Allan Wexler, Grace Ann Bennett, Kimberly S. Lindner
  • Patent number: 9091923
    Abstract: Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: July 28, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: George Liu, Vencent Chang, Norman Chen, Kuei Shun Chen, Chin-Hsiang Lin
  • Patent number: 9067238
    Abstract: A method of treating a laser-activated thermoplastic substrate having a metal compound dispersed therein is described. The substrate is contacted with an aqueous composition comprising: (i) a thiol functional organic compound; (ii) an ethoxylated alcohol surfactant; and (iii) xanthan gum. By use of the treatment composition, when the substrate is subsequently laser-activated and plated by electroless plating, extraneous plating of the substrate is substantially eliminated.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: June 30, 2015
    Inventors: Robert Hamilton, Ernest Long, Andrew M. Krol
  • Publication number: 20150140495
    Abstract: A conductive metal pattern is formed using a reactive polymer that can provide pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of providing crosslinking. The polymeric layer is patternwise exposed to radiation to provide first exposed regions that are then contacted with electroless seed metal ions to form a pattern of electroless seed metal ions, followed by contact with a halide. At least some of the electroless seed metal halide can be exposed to form second exposed regions. The polymeric layer can be contacted with a reducing agent either: (i) to develop the electroless seed metal image in the second exposed regions, or (ii) to develop all of the electroless seed metal halide in the first exposed regions, and optionally contacted with a fixing agent. The electroless seed metal nuclei in the first exposed regions can be electrolessly plated with a conductive metal.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Inventor: Mark Edward Irving
  • Publication number: 20150140285
    Abstract: A conductive metal pattern is formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. The electroless seed metal ions are reduced to provide a pattern of electroless seed metal nuclei that are then electrolessly plated with a conductive metal.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Inventors: MARK EDWARD IRVING, ALLAN WEXLER, GRACE ANN BENNETT, KIMBERLY S. LINDNER
  • Publication number: 20150140496
    Abstract: A conductive metal pattern can be formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40, and which is electrolessly plated with a conductive metal.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Inventor: Mark Edward Irving
  • Publication number: 20150140494
    Abstract: A conductive metal pattern is formed using a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide de-blocking and crosslinking in the reactive polymer. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The polymeric layer is contacted with a reducing agent, followed by bleaching to remove surface amounts of the reducing agent in both non-exposed regions and exposed regions. The exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent and to form a pattern of corresponding electroless seed metal nuclei in the exposed regions. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Inventor: Mark Edward Irving
  • Publication number: 20150140729
    Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.
    Type: Application
    Filed: November 19, 2014
    Publication date: May 21, 2015
    Inventors: Marc FERRO, George MALLIARAS
  • Publication number: 20150140483
    Abstract: A conductive metal pattern is formed in a polymeric layer that has a polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to form non-exposed regions and exposed regions, which are contacted with a reducing agent to incorporate reducing agent therein. These exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent to form corresponding electroless seed metal nuclei that can be then electrolessly plated with a conductive metal.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Inventor: MARK EDWARD IRVING
  • Patent number: 9034570
    Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: May 19, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Scott E. Sills, Gurtej S. Sandhu, John Smythe, Ming Zhang
  • Patent number: 9029071
    Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: May 12, 2015
    Assignee: Merck Patent GmbH
    Inventors: Ninad Shinde, Tatsuro Nagahara, Yusuke Takano
  • Publication number: 20150116679
    Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.
    Type: Application
    Filed: October 30, 2013
    Publication date: April 30, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Cheng TSAI, Hung-Chi WU, Tsung-Chuan LEE, Chung-Hsien LIN
  • Patent number: 9005878
    Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles and used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: April 14, 2015
    Assignee: Eastman Kodak Company
    Inventors: Deepak Shukla, Kevin M. Donovan, Mark R. Mis
  • Patent number: 8999610
    Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: April 7, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Hsing Lu, Chung-Hung Lin, Chih-Wei Wen
  • Publication number: 20150093706
    Abstract: The invention relates to a method for recording a source image, in which a reproduction of the source image is made in the form of a matrix of elementary patterns. The method comprises the following steps: deposition (401) of a first opaque layer (42) on a first substrate (41); etching (402) of the first opaque layer (42) so as to form a matrix of first cells (440) each having one from amongst several first predetermined patterns; deposition of at least one second opaque layer (45); and etching of the second opaque layer (45), so as to form a matrix of second cells (470) each having one from amongst several second pre-determined patterns, the elementary patterns being defined by the superimposition of a second pattern and a first pattern. The invention also relates to an image medium obtained by means of such a method.
    Type: Application
    Filed: September 25, 2014
    Publication date: April 2, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventor: Christophe MARTINEZ
  • Publication number: 20150093707
    Abstract: An imageable material can be used to form a mask image for providing a relief image. This imageable material has a simplified structure and consists essentially of, in order: a transparent polymeric carrier sheet and a barrier layer comprising a first infrared radiation absorbing compound. A first ultraviolet radiation absorbing compound is provided in the transparent polymeric carrier sheet or the barrier layer. A non-silver halide thermally sensitive imageable layer is disposed on the barrier layer and comprises a second infrared radiation absorbing compound and a second ultraviolet radiation absorbing compound. A relief image is formed by imaging the imageable material to form an imaged mask material, exposing a relief-forming material with curing radiation through the imaged mask material to form exposed regions and non-exposed regions, and developing the imaged relief-forming material to form a relief image by removing its non-exposed regions.
    Type: Application
    Filed: December 9, 2014
    Publication date: April 2, 2015
    Inventor: Kevin M. Kidnie
  • Publication number: 20150090691
    Abstract: Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).
    Type: Application
    Filed: August 9, 2012
    Publication date: April 2, 2015
    Applicant: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masatoshi Echigo, Go Higashihara, Naoya Uchiyama
  • Publication number: 20150086929
    Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an ?-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 26, 2015
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masayoshi Sagehashi, Teppei Adachi
  • Patent number: 8986924
    Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequestering metals.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: March 24, 2015
    Assignee: Eastman Kodak Company
    Inventors: Deepak Shukla, Kevin M. Donovan
  • Publication number: 20150079521
    Abstract: Methods for making differentially pattern cured microstructured articles are disclosed, using a molding tool having a microstructured surface, a patterned irradiation to generate irradiate and non-irradiated regions in a radiation curable resin. Different combinations of molding tools and patterned irradiation provide numerous variants of differentially pattern cured microstructured articles without requiring costly modification of the molding tools.
    Type: Application
    Filed: May 23, 2012
    Publication date: March 19, 2015
    Inventors: Olester Benson, JR., Kathryn M. Spurgeon, Steven R. Vanhoose, Tadesse G. Nigatu
  • Patent number: 8980534
    Abstract: A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: March 17, 2015
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takumi Namiki, Yuriko Shirai, Mai Sugawara
  • Patent number: 8980651
    Abstract: A multi-patterning method of manufacturing a patterned wafer provides test structures designed to enhance overlay error measurement sensitivity for monitoring and process control. One or more patterns are overlaid on a first pattern, each of a given pitch, with the elements interleaved. Test structure is formed with elements of the overlaid patterns spaced away from respective mid-positions more closely toward elements of the first pattern. In some embodiments, test structure elements of the second pattern are overlaid midway between mid-positions of elements of the first pattern and measured by scatterometry. In other embodiments, test structure elements of the second pattern are overlaid at a slightly different pitch than the elements of the first pattern and measured by reflectivity. Measurements are compared with library measurements to identify the error, which may be fed back to control the patterning process. The multi-patterning may be formed by LELE, LLE, LFLE, or other methods.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: March 17, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hongyu Henry Yue, Shifang Li
  • Patent number: 8980538
    Abstract: A method of forming a layered substrate comprising a self-assembled material is provided. The method includes forming a first layer of material on a substrate, forming a layer of a radiation sensitive material on the first layer of material, imaging the layer of the radiation sensitive material with patterned light, heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature, developing the imaged layer, and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 17, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Mark H. Somervell, Michael A. Carcasi
  • Publication number: 20150072164
    Abstract: A photochemical process for decorating hydrophobic surfaces with nanoparticles includes the steps of providing a metal precursor having hydrophobic parts adapted to interact with assistance of a photosensitizer; and forming a reactive adduct photosensitizer/precursor-metal/surface, preparing the surface to grow metal nanoparticles in situ having sizes and shapes governed by the morphology of the surface. The formed nanoparticles are sufficiently isolated, not aggregated and not interconnected, and do not create a film but maintain the chemical properties of substrate and metal. Surfaces so selectively decorated have hydrophobic properties even with hydrophilic substrates. Substrates with multiple chemical functionalities are thereby obtained, which can selectively bind different molecules or biomolecules onto the substrate and the surface of the metal nanoparticles surface. A process according to the invention also allows decorating surfaces with two or more metallic species.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 12, 2015
    Inventors: Salvatore Petralia, Giorgio Ventimiglia
  • Publication number: 20150029411
    Abstract: A touch panel, conductive film and the method for manufacturing the same are disclosed. The conductive film may be disposed at a substrate to act as a touch sensing area. In particular, the conductive film may be formed by a method including the following steps: providing a substrate; uniformly mixing nano conductive metal with positive or negative sensitive material to form a mixture; coating the mixture over the substrate to form a wet film on the substrate; and patterning the wet film by an exposure process and a development process to form the conductive film.
    Type: Application
    Filed: October 2, 2013
    Publication date: January 29, 2015
    Applicant: HengHao Technology Co. LTD
    Inventor: YI-PENG KUO
  • Publication number: 20150029459
    Abstract: An ophthalmic lens incorporating clearly identifiable, highly visible embedded labels that are not visible to the wearer or others when placed on the eye may be utilized to allow an individual to easily distinguish between the normal state of the lens and the inverted state of the lens as well as serve any number of functions, including acting as a brand label, a prescription label or as a cosmetic enhancer. The embedded label comprises holographic recordings revealed only in transmitted light.
    Type: Application
    Filed: July 25, 2013
    Publication date: January 29, 2015
    Applicant: Johnson & Johnson Vision Care, Inc.
    Inventors: Nelson Tabirian, Rafael Vergara Toloza, Russell Spaulding
  • Patent number: 8940475
    Abstract: A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: January 27, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Shannon W. Dunn, Dave Hetzer
  • Patent number: 8932803
    Abstract: A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: January 13, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Kazuhiro Katayama
  • Patent number: 8927434
    Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: January 6, 2015
    Assignee: Eastman Kodak Company
    Inventors: Carolyn R. Ellinger, David H. Levy, Shelby F. Nelson