Abstract: A conductive metal pattern is formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. The electroless seed metal ions are reduced to provide a pattern of electroless seed metal nuclei that are then electrolessly plated with a conductive metal.

Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.

Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.

Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles and used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material.

Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

Abstract: An imageable material can be used to form a mask image for providing a relief image. This imageable material has a simplified structure and consists essentially of, in order: a transparent polymeric carrier sheet and a barrier layer comprising a first infrared radiation absorbing compound. A first ultraviolet radiation absorbing compound is provided in the transparent polymeric carrier sheet or the barrier layer. A non-silver halide thermally sensitive imageable layer is disposed on the barrier layer and comprises a second infrared radiation absorbing compound and a second ultraviolet radiation absorbing compound. A relief image is formed by imaging the imageable material to form an imaged mask material, exposing a relief-forming material with curing radiation through the imaged mask material to form exposed regions and non-exposed regions, and developing the imaged relief-forming material to form a relief image by removing its non-exposed regions.

Abstract: Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

Abstract: The invention relates to a method for recording a source image, in which a reproduction of the source image is made in the form of a matrix of elementary patterns. The method comprises the following steps: deposition (401) of a first opaque layer (42) on a first substrate (41); etching (402) of the first opaque layer (42) so as to form a matrix of first cells (440) each having one from amongst several first predetermined patterns; deposition of at least one second opaque layer (45); and etching of the second opaque layer (45), so as to form a matrix of second cells (470) each having one from amongst several second pre-determined patterns, the elementary patterns being defined by the superimposition of a second pattern and a first pattern. The invention also relates to an image medium obtained by means of such a method.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an ?-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.

Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequestering metals.

Abstract: Methods for making differentially pattern cured microstructured articles are disclosed, using a molding tool having a microstructured surface, a patterned irradiation to generate irradiate and non-irradiated regions in a radiation curable resin. Different combinations of molding tools and patterned irradiation provide numerous variants of differentially pattern cured microstructured articles without requiring costly modification of the molding tools.

Abstract: A method of forming a layered substrate comprising a self-assembled material is provided. The method includes forming a first layer of material on a substrate, forming a layer of a radiation sensitive material on the first layer of material, imaging the layer of the radiation sensitive material with patterned light, heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature, developing the imaged layer, and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component.

Abstract: A multi-patterning method of manufacturing a patterned wafer provides test structures designed to enhance overlay error measurement sensitivity for monitoring and process control. One or more patterns are overlaid on a first pattern, each of a given pitch, with the elements interleaved. Test structure is formed with elements of the overlaid patterns spaced away from respective mid-positions more closely toward elements of the first pattern. In some embodiments, test structure elements of the second pattern are overlaid midway between mid-positions of elements of the first pattern and measured by scatterometry. In other embodiments, test structure elements of the second pattern are overlaid at a slightly different pitch than the elements of the first pattern and measured by reflectivity. Measurements are compared with library measurements to identify the error, which may be fed back to control the patterning process. The multi-patterning may be formed by LELE, LLE, LFLE, or other methods.

Abstract: A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.

Abstract: A photochemical process for decorating hydrophobic surfaces with nanoparticles includes the steps of providing a metal precursor having hydrophobic parts adapted to interact with assistance of a photosensitizer; and forming a reactive adduct photosensitizer/precursor-metal/surface, preparing the surface to grow metal nanoparticles in situ having sizes and shapes governed by the morphology of the surface. The formed nanoparticles are sufficiently isolated, not aggregated and not interconnected, and do not create a film but maintain the chemical properties of substrate and metal. Surfaces so selectively decorated have hydrophobic properties even with hydrophilic substrates. Substrates with multiple chemical functionalities are thereby obtained, which can selectively bind different molecules or biomolecules onto the substrate and the surface of the metal nanoparticles surface. A process according to the invention also allows decorating surfaces with two or more metallic species.

Abstract: A touch panel, conductive film and the method for manufacturing the same are disclosed. The conductive film may be disposed at a substrate to act as a touch sensing area. In particular, the conductive film may be formed by a method including the following steps: providing a substrate; uniformly mixing nano conductive metal with positive or negative sensitive material to form a mixture; coating the mixture over the substrate to form a wet film on the substrate; and patterning the wet film by an exposure process and a development process to form the conductive film.

Abstract: An ophthalmic lens incorporating clearly identifiable, highly visible embedded labels that are not visible to the wearer or others when placed on the eye may be utilized to allow an individual to easily distinguish between the normal state of the lens and the inverted state of the lens as well as serve any number of functions, including acting as a brand label, a prescription label or as a cosmetic enhancer. The embedded label comprises holographic recordings revealed only in transmitted light.

Abstract: A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.

Abstract: A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed.

Abstract: A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process.

Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.

Abstract: A method of fabricating a component for use in a watch includes a step of depositing a first thin film on a wafer wherein the first thin film is adapted to allow light reflected away from the wafer to be indicative of a first color characteristic. The step of depositing the first thin film is performed by using a plasma-enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process. The method may further include a step of fabricating a second color characteristic, including defining a pattern on the first thin film using photolithography, and, processing a region within a boundary of the pattern so that the region is adapted to allow light reflected away from the wafer to be indicative of the second color characteristic. The step of processing the region within the boundary of the pattern includes depositing a metal or a ceramic material within the boundary of the pattern which is indicative of the second color characteristic.

Abstract: A method of forming a polymer nanofiber-metal nanoparticle composite pattern includes forming on a substrate a polymer nanofiber layer comprising polymer nanofibers made from polymers including a heteroaryl group; selectively exposing to UV-ozone a part of the polymer nanofiber layer through an aperture of a mask; selectively removing a part of the polymer nanofiber layer which was not exposed to UV-ozone from the polymer nanofiber layer to form a polymer nanofiber layer pattern; depositing a metal precursor on the polymer nanofiber layer pattern; and reducing the metal precursor into a metal.

Abstract: The invention relates to a method for applying a photo-activated layered polymer coating to a substrate material in which one or more layers do not contain photoinitiator, or are not exposed to initiating light, but cure due to migration of cationic active centers. At least two separate monomer layers are applied to the substrate material. At least one of the monomer layers includes a photoinitiator capable of producing cationic active centers. The at least one layer including the photoinitiator is exposed to a source of UV radiation at a desired wavelength forming cationic active centers. The at least two separate monomer layers react in a polymerization reaction forming a cured layered material. The cationic active centers of the exposed monomer layer migrate to the unexposed layer such that both layers cure via the polymerization reaction.

Abstract: A method for mitigating line-edge roughness on a semiconductor device. The method includes line-edge roughness mitigation techniques in accordance with embodiments of the present invention. The techniques include: reducing the SiON film thickness below a conventional thickness; increasing the photoresist thickness above a conventional thickness; etching the SiON film with an etch bias power less than a conventional wattage amount with an overetch percentage less than a conventional overetch percentage; removing the SiON film layer immediately after completion of the amorphous carbon film layer etching; and lowering the lower electrode temperature below a conventional temperature.

Abstract: In a method and apparatus for manufacturing a donor substrate, a pattern layer which exposes a surface of a substrate is arranged on the substrate, and an organic material is deposited on the exposed surface of the substrate. The pattern layer includes a film pattern that defines a plurality of first openings and a photoresist pattern that is positioned on the film pattern and defines second openings, which correspond to the first openings, respectively, a minimum width of the second openings being smaller than that of the first openings.

Abstract: A method of forming a resist pattern, comprising: a step of forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of acid and an acid-generator component (B) which generates acid upon exposure; a step of subjecting the resist film to exposure; a step of patterning the resist film by a negative-tone development using a developing solution containing the organic solvent to form a resist pattern; a step of applying a coating material to the resist pattern, thereby forming a coating film; a step of performing a thermal treatment at a temperature lower than the softening point of the resist pattern, thereby heat shrinking the coating film to narrow an interval between the resist pattern; and a step of removing the coating film.

Abstract: Provided is a copolymer. The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: A catalyst precursor resin composition includes an organic polymer resin; a fluorinated-organic complex of silver ion; a monomer having multifunctional ethylene-unsaturated bonds; a photoinitiator; and an organic solvent. The metallic pattern is formed by forming catalyst pattern on a base using the catalyst precursor resin composition reducing the formed catalyst pattern, and electroless plating the reduced catalyst pattern. In the case of forming metallic pattern using the catalyst precursor resin composition, a compatibility of catalyst is good enough not to make precipitation, chemical resistance and adhesive force of the formed catalyst layer are good, catalyst loss is reduced during wet process such as development or plating process, depositing speed is improved, and thus a metallic pattern having good homogeneous and micro pattern property may be formed after electroless plating.

Abstract: A photo resist layer includes a first region and a second region. A treatment layer is applied to the photo resist layer.

Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.

Abstract: A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

Abstract: A negative electrophoretic photoresist is applied over a plurality of protruding disposable template portions on a substrate. A silo structure is placed on planar portions of the negative electrophoretic photoresist that laterally surround the plurality of protruding disposable template portions. The negative electrophoretic photoresist is lithographically exposed employing the silo structure and a first lithographic mask, which includes a transparent substrate with isolated opaque patterns thereupon. After removal of the silo structure, the negative electrophoretic photoresist is lithographically exposed employing a second lithographic mask, which includes a pattern of transparent areas overlying the planar portions of the negative electrophoretic photoresist less the areas for bases of metal structure to be subsequently formed by electroplating. The negative electrophoretic photoresist is developed to form cavities therein, and metal structures are formed by electroplating within the cavities.

Abstract: A method of patterning a conductive polymer includes providing a conductive polymer layer coated over a first support followed by pattern-wise transferring a layer containing polyvinyl acetal from a second support onto the conductive polymer to form a mask with at least one opening. The masked conductive polymer is subjected to treatment through the opening that changes the conductivity of the conductive polymer by at least one order of magnitude in areas not covered by the mask.

Abstract: A method for fabricating a patterned dichroic film is provided, wherein the method comprises steps as follows: A patterned material layer comprising at least one inorganic layer is firstly provided on a substrate. A film deposition process is then performed to form a dichroic film on the patterned material layer and the substrate. The patterned material layer is subsequently removed, whereby a portion of the dichroic film disposed on the patterned material layer can be removed simultaneously.

Abstract: Embodiments of the present invention are directed to techniques for obtaining patterns of features. One set of techniques uses multiple-pass rolling mask lithography to obtain the desired feature pattern. Another technique uses a combination of rolling mask lithography and a self-aligned plasmonic mask lithography to obtain a desired feature pitch.

Abstract: A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution containing Si, Ti, Zr, Hf, and/or Al and the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

Abstract: An opto-electric hybrid board which is capable of suppressing the increase in light propagation losses and which is excellent in flexibility, and a method of manufacturing the same are provided. The opto-electric hybrid board includes an electric circuit board, an optical waveguide, and a metal layer. The electric circuit board includes an insulative layer having front and back surfaces, and electrical interconnect lines formed on the front surface of the insulative layer. The optical waveguide is formed on the back surface of the insulative layer of the electric circuit board. The metal layer is formed between the optical waveguide and the back surface of the insulative layer of the electric circuit board. The metal layer is patterned to have a plurality of strips. Cores of the optical waveguide are disposed in a position corresponding to a site where the metal layer is removed by the patterning.

Abstract: Methods of preparing organosilane-functionalized regions on a substrate surface and more specifically fabricating patterned functionalized substrates suitable to be optically read, the methods generally comprising employing a vapor deposition process of an organosilane gas onto a lithographically patterned silicon surface followed by removal of the patterning media in a bath of organic solvents and ultrasonic excitation. The inventive methods provide optimized surface density of functional species while avoiding deleterious effects that can occur when lithographically patterned substrates are exposed to various gaseous species during the functionalization process.

Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Abstract: A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Abstract: A method is described for the direct photochemical modification and micro-patterning of polymer surfaces, without the need to use a photoresist. For example, micropatterns of various functional chemical groups, biomolecules, and metal films have been deposited on poly(carbonate) and poly(methyl methacrylate) surfaces. These patterns may be used, for example, in integrated electronics, capture elements, or sensing elements in micro-fluidic channels.

Abstract: To provide a resist pattern improving material, containing: water; and benzalkonium chloride represented by the following general formula (1): where n is an integer of 8 to 18.

Abstract: Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.

Abstract: A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:

Abstract: A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).