Abstract: An ultraviolet absorber comprising, as an effective component, a benzotriazole compound represented by the following general formula (I) ##STR1## wherein R represents hydrogen, methyl, ethyl or phenyl. The ultraviolet absorber undergoes minimal sublimation, has excellent thermal resistance, provides satisfactory light fastness for materials made of polyester-based synthetic fibers, particularly cation-dyeable polyester-based fibers, and is also inexpensive, generates few by-products and is easy to produce industrially.

Abstract: A photographic element is disclosed comprising a support bearing at least one photosensitive layer and an antistatic layer comprising a binder, vanadium pentoxide, and an aromatic ketone ultraviolet absorbing compound. The antistatic layer provides the properties of UV absorbance and antistatic protection, which properties are retained after photographic processing. Specifically, in accordance with preferred embodiments, a layer providing a surface and volume resistivity of less than about 10.sup.8 ohm/cm coupled with an optical density of greater than about 1.0 from 300-400 nm and less than about 0.03 as measured in orthochromatic light is provided. The layer composition components are soluble in common coating solvents, compatible with each other, and do not produce any adverse sensitometric effects either in the raw state, during or after processing of the film itself.

Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Abstract: A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.

Abstract: The light stability of a color photographic silver halide material is improved if, as UV protection, a) a TiO.sub.2 pigment having a primary particle diameter of 1 to 100 nm is added to one layer and b) a hydroxyphenylbenzotriazole compound and/or a hydroxyphenyltriazine compound is added to the same or a different layer of the material.

Abstract: Silver halide photographic elements are disclosed comprising a support having a front and a back side, at least one light-sensitive silver halide emulsion layer and a light-insensitive protective overcoat on the front side of the support, and a magnetic recording layer on the back side of the support, the light-insensitive protective overcoat comprising an outermost protective layer, wherein the outermost protective layer comprises a hydrophilic binder and dispersed particles having a mean size of less than 0.4 .mu.m of a polymer having a glass transition temperature of at least 70.degree. C. comprising units derived from monomers A and B at a weight ratio of A:B of from 97:3 to 80:20 and less than 3 wt % ionic monomers, where A represents ethylenically unsaturated monomers which form substantially water insoluble homopolymers and B represents ethylenically unsaturated non-ionic monomers capable of forming water soluble homopolymers.

Abstract: An infrared laser addressable imaging element comprising a substrate bearing a first layer comprising a reducible light-insensitive silver salt and a binder; and a second layer comprising an infrared absorber, a reducing agent for said silver salt and a binder; wherein said binder of said first layer is a polymeric medium having a glass transition temperature of at least 80.degree. C.

Abstract: This invention relates to a photographic element containing a polymeric ultraviolet absorbing polymer fromed from an ultraviolet absorbing monomer of formula (I): ##STR1## where X is a bivalent linking group, and Y contains an ethylenically unsaturated functional group.

Abstract: A method for manufacturing an anti-reflective layer comprises the steps of coating a polymer solution containing at least one compound selected from the group consisting of phenol-based resins, water-soluble resins and acryl resins as a main component, and then baking at a high temperature. The method is simplified and the layer's reflectance is greatly enhanced.

Abstract: Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.

Abstract: The present invention provides a photosensitive color proofing article incorporating an antihalation effective amount of one or more antihalation dyes of the general formula (I) shown below: ##STR1## wherein: Z is an oxygen atom, NH, or NR; R is an alkyl group of 1 to 12 carbon atoms or a hydrogen atom; R.sup.1 represents a perfluoroalkylsulfonyl group of 1 to 12 carbon atoms or an arylsulfonyl group; and R.sup.2 represents a perfluoroalkylsulfonyl group of from 1 to 12 carbon atoms; an arylsulfonyl group; or a cyano group. The antihalation dyes of formula (I) absorb radiation within the wavelength range of from about 325 to 700 nm and preferably, from about 325 to 450 nm.

Abstract: Solid particle dispersions of compounds useful in imaging elements can be made with substantially improved stability to particle growth by dispersing the compound of interest in the presence of a relatively small amount of a second compound that is structurally similar to the compound of interest. This second compound is combined with the compound of interest prior to dispersing the compound of interest, i.e., prior to milling in the case of milled dispersions, and prior to precipitation in the case of pH or solvent precipitated dispersions. While being distinct, the second compound has a similar chemical structure to the main compound.

Abstract: A compound represented by the following general formula (1) and a photosensitive resin composition comprising the compound of formula (1): ##STR1## The compound of formula (1) normally has a low ultraviolet absorption, but has a high ultraviolet absorption when heat-treated. The present invention also provides a photosensitive resin layer composition which has a low ultraviolet absorption in an appropriate wavelength range such that ultraviolet rays reach sufficiently deep into the film to effect curing when exposed to light, but which has a high ultraviolet absorption when subsequently processed.

Abstract: A silver halide photographic material comprising a support having at least one pre-fogged direct positive emulsion layer provided on at least one side of the support, wherein silver halide grain formation of the emulsion is carried out in the presence of a silver halide solvent, the emulsion contains at least one of an Rh salt, an Ru salt or a polybromoiridium salt, and at least one compound selected from the group consisting of compounds represented by the following formula (I), (II) and (III) is added to the emulsion while the silver halide photographic material is prepared:R--SO.sub.2 S--M (I)R--SO.sub.2 S--R.sup.1 (II)R--SO.sub.2 S--L.sub.m --SSO.sub.2 --R.sup.2 (III)wherein R, R.sup.1 and R.sup.2 are the same or different, and each represents an aliphatic group, an aromatic group or a heterocyclic group; M represents a cation; L represents a divalent linking group; and m represents 0 or 1.

Abstract: This invention relates to an antireflective layer (ARL) which has both good absorption capability and low reflectivity at the photoresist/ARL interface. The ARL also significantly reduces CD variation in exposed photoresist film. The ARL of the present invention comprises an organic base resin having fine carbon particles dispersed therein. The combination of the organic base resin and fine carbon particles provide both good absorption and low reflectivity.The present invention is also related to a process of forming a semiconductor by applying an antireflection layer to the surface of a substrate, forming a photoresist layer on the antireflection layer, and selectively exposing the substrate to ultraviolet light, wherein the antireflective layer is an organic resin having carbon particles dispersed therein.

Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Abstract: TiO.sub.2 containing iron oxide having an average primary particle diameter of 1 to 100 nm and an iron oxide content of 0.5 to 20 wt. % is suitable as a UV absorber for photographic materials.

Abstract: A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film.

Abstract: TiO.sub.2 with an average primary particle diameter of 10 to 100 nm is suitable as a UV absorber for photographic materials.

Abstract: Stable photographic coating compositions comprising a polymer latex are prepared by mixing an aqueous solution comprising gelatin with a latex dispersion of a polymer of the formula(A).sub.x (B).sub.y (C).sub.zwhereA and B are formed from nonionic monomers,C is formed from anionic monomers, andx, y and z are monomer weight fractions where x=0 to 1.0, y=0 to 1.0, x+y=about 0.98 to 1.0, and z=0 to about 0.02,wherein A, B, x and y are such that latex dispersions of polymers of the formula (A).sub.x (B).sub.y have calcium ion critical coagulation concentrations of less than 80 mM Ca.sup.+2 in gelatin solutions,wherein the gelatin of the aqueous solution mixed with the latex dispersion comprises a gelatin of low calcium ion content such that the coating composition has a calcium Ca.sup.2+ concentration of less than 2 mM. The method of the invention allows for the preparation of aqueous gelatin coating solutions comprising latex dispersions of polymers which are unstable in the presence of calcium ions.

Abstract: There is disclosed an emulsified dispersion, in which at least one compound of the formula (1) dissolved in an organic solvent comprising at least one high-boiling organic solvent satisfying the condition X.gtoreq.85 in formula (A) is emulsified in a water medium; with the proviso that phthalates and compounds having an epoxy group and having the viscosity less than 100 mPas are excluded from said high-boiling organic solvents: formula (1) ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6, which are the same or different, each represent a hydrogen atom or a substituent, and R.sup.5 and R.sup.6 may bond together to form a 6-membered ring,formula (A)X=24.7.times.Log.sub.10 Y-11.7.times.Z+43.7wherein Y and Z stand for, respectively, the viscosity in mPas at 25.degree. C. and the specific water content in % by weight of the high-boiling organic solvent. There is also disclosed a silver halide color light-sensitive material containing the emulsified dispersion.

Abstract: A method of forming a resist pattern comprising forming a photoresist layer on a substrate, forming a transparent anti-reflective film on said photoresist layer by applying an anti-reflective material onto said photoresist layer, said anti-reflective material comprising a fluorinated resin which is soluble in an organic hydrocarbon solvent, exposing a light to said resist layer through said transparent anti-reflective film, removing said anti-reflective film using an organic hydrocarbon solvent, and developing said photoresist layer.

Abstract: A photographic material having at least one photosensitive silver halide emulsion layer and at least one non-photosensitive layer on a support, which material contains at least one compound of the formula (I) in at least one of the layers, ##STR1## in which R.sub.1 to R.sub.5, L, m and n have the meaning stated in the specification and PUG means a photographically active group, may be produced in thinner layers.

Abstract: Silver halide light sensitive photographic elements comprising a support bearing on one side thereof at least one blue-sensitive silver halide emulsion yellow-image forming layer, at least one red-sensitive silver halide emulsion cyan-image forming layer, at least one green-sensitive silver halide emulsion magenta-image forming layer, and an antihalation layer comprising a cyan filter dye coated between the support and the red-sensitive layer, wherein the green-sensitive layer comprises a four equivalent magenta image forming coupler and the cyan filter dye is of the formula (I): ##STR1## where L.sup.1, L.sup.2, L.sup.3, L.sup.4 and L.sup.5 are methine groups; R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently H or alkyl or aryl groups; and M.sup.+ is H or a counter ion; wherein at least one of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 comprises an aryl group substituted with a substituent having a .pi. value of less than -0.10, where .pi.

Abstract: A silver halide color photographic material comprising a plurality of light-sensitive layers having different spectral sensitivities, wherein two nearest light-sensitive layers interposing a light-insensitive layer containing colloidal silver each contains in the proportion of 50% or more (of the projected area) of tabular grains having an aspect ratio of from 3 to 100 and 10 or more dislocation lines per one grain, and a light-insensitive layer is provided between each of the light-sensitive layers and the light-insensitive layer containing colloidal silver.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.

Abstract: A new type of yellow dyes with general formula Q--CO--CO--X is disclosed. They can be used in photographic materials as antihalation dyes, acutance dyes or filter dyes. Preferably they are incorporated in UV sensitive contact materials for pre-press applications.

Abstract: Compounds of the formula I ##STR1## in which R.sub.1 and R.sub.5, independently of one another, are C.sub.1 -C.sub.12 alkyl; R.sub.2, R.sub.3 and R.sub.4, independently of one another, are H; C.sub.1 -C.sub.12 alkyl; C.sub.2 -C.sub.6 alkenyl; C.sub.1 -C.sub.12 alkoxy; C.sub.2 -C.sub.18 alkenyloxy; halogen; trifluormethyl; C.sub.7 -C.sub.11 phenylalkyl; phenyl; phenyl which is substituted by C.sub.1 -C.sub.18 alkyl, C.sub.1 -C.sub.18 alkoxy or halogen; phenoxy; or phenoxy which is substituted by C.sub.1 -C.sub.18 alkyl, C.sub.1 -C.sub.18 alkoxy or halogen; the two radicals R.sub.7 are identical or different and are hydrogen or C.sub.1 -C.sub.18 alkyl; or are C.sub.1 -C.sub.18 alkyl which is substituted by OH, C.sub.1 -C.sub.18 alkoxy, C.sub.3 -C.sub.6 alkenyloxy, halogen, --COOH, --COOR.sub.8, --CONH.sub.2, --CONHR.sub.9, --CON(R.sub.9)(R.sub.10), --NH.sub.2, --NHR.sub.9, --N(R.sub.9)(R.sub.10), --NHCOR.sub.11, --CN, --OCOR.sub.11, phenoxy and/or phenoxy which is substituted by C.sub.1 -C.sub.18 alkyl, C.sub.

Abstract: An ultraviolet absorbing compound of formula (I) below, and photographic elements containing such a compound as an ultraviolet absorber: ##STR1## wherein: R.sub.4 is a substituted alkyl group, R.sub.4 may be further joined to either L or A* forming a ring and the benzo or phenyl ring shown may be further substituted or unsubstituted;L is a bivalent linking group;p is 0 or 1;A* is an alkyl group having an asymmetric carbon or asymmetric silicon atom, and;wherein the ultraviolet absorbing compound of formula (I) is a mixture of two enantiomers about the asymmetric carbon or silicon atom of A*.

Abstract: A heat-sensitive recording material comprising a support having thereon a heat-sensitive recording layer and a protective layer in this sequence, said heat-sensitive recording material containing a compound represented by formula (1), (2), (3), or (4): ##STR1##

Abstract: A process for production of a micropattern, comprised of a step for forming an antireflection film comprised of an inorganic film on an underlying substrate, a step for forming a resist film on said antireflection film, a step for exposing said resist film using i-rays or light of a wavelength shorter than i-ray and transferring a mask pattern to the resist film, a step for using the resist film on which the mask pattern had been transferred as a mask to etch the antireflection film and transfer the mask pattern to the antireflection film; and a step for using the antireflection film on which said mask pattern had been transferred as a mask to etch the underlying substrate and transfer the mask pattern to the underlying substrate.

Abstract: A color photographic recording material having at least one silver halide emulsion layer, which material contains in at least one of its layers a combination of at least one UV absorber of the formula I and at least one low molecular weight or polymeric oil formula containing acid groups, for example of the formula T--?R.sup.21 --(Q.sup.1).sub.p !.sub.q --X.sup.21 --OH (II), exhibits improved absorption for UV light. ##STR1## In the formula I: R.sup.1 and R.sup.3 mean H, halogen, hydroxy, mercapto, alkyl, aryl, alkoxy, aryloxy, acyloxy, alkylthio, arylthio, --NR.sup.5 --R.sup.6, alkoxycarbonyl, carbamoyl or sulphamoyl;R.sup.2 means H, hydroxy, halogen or alkyl;R.sup.4 means alkyl, alkoxy, alkylthio, aryloxy, arylthio or a residue of the formula ##STR2## R.sup.5 means H, alkyl or aryl; R.sup.6 means H, alkyl, aryl, acyl, alkoxycarbonyl, carbamoyl, sulphamoyl or sulphonyl;m, n and o mean 1, 2, 3 or 4,wherein two or more residues R.sup.1, R.sup.2 and R.sup.3 are identical or different;in the formula II:X.sup.

Abstract: A photographic element comprising a light sensitive portion and an ultraviolet absorbing polymer comprising repeating units of a 2'-hydroxphenyl benzotriazole with a 5- or 6-substituent selected from halogen, cyano, carboxy or a sulfonyl, and a 4'-alkoxy group in which the alkylene portion of the alkoxy is linked, in sequence through a first optional bivalent linking group, then an oxygen, sulfur or amino group, then a second optional bivalent linking group, to the polymer chain, provided that the 3'-position is unsubsituted and the 4'-substituent does not have any --NH--, --OH or --SH substituents.

Abstract: A photographic element having a support and a layer containing first and second oxonol dyes, the first dye being a monomethine pyrazolone oxonol dye with each pyrazolone ring having a 1-phenyl group bearing an ortho-substituent selected from sulfo, sulfato, hydroxy, or nitro substituent, and the second dye being a tri- or penta-methine oxonol dye. A method of making a photographic element is also provided. The method comprises maintaining a mixture of at least such a first dye in a carrier medium at a temperature of at least 30.degree. C. for 0.5 hour.

Abstract: A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.

Abstract: High-contrast room-light-handleable contact-exposed ultraviolet-sensitive black-and-white silver halide photographic elements useful in the field of graphic arts are provided with an electrically-conductive layer which serves to provide antistatic protection. The electrically-conductive layer is comprised of electrically-conductive metal-containing particles, such as particles of antimony-doped tin oxide, a film-forming polymer, such as gelatin, and an ultraviolet-absorber, such as a solid particle filter dye, in an amount sufficient to provide halation protection.

Abstract: A silver halide emulsion which comprises at least one dispersion medium and silver halide grains, wherein not less than 30% of the total projected area of the silver halide grains accounts for tabular grains each (i) having a {100} face as a major face, (ii) having an aspect ratio (diameter/thickness) of not less than 1.5, and (iii) having a nucleus during nucleus formation, the nucleus being present within the square of not more than 10% of the entire projected area of each of said silver halide grains when viewed the silver halide grains from the vertical direction to the major faces, the square containing one corner of each of said silver halide grains.

Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: A method for fabricating a semiconductor device, including the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over the anti-reflective film and subjecting the first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern having a dimension slightly larger than a desired pattern dimension; etching an exposed portion of the anti-reflective film, thereby forming an anti-reflective film pattern; removing the first photoresist film pattern and coating a second photoresist film over the entire exposed surface of the resulting structure obtained after the removal of the first photoresist film pattern; subjecting the second photoresist film to a light exposure process using the mask and a development, thereby forming a second photoresist film pattern having the desired pattern dimension; and etching an exposed portion of the anti-reflective film pattern and then etching the low

Abstract: A substantially inert ultraviolet absorbing compound, and photographic elements containing them, which compound has a peak absorption at less than 400 nm and being of formula (I): ##STR1## wherein: X is O or NR.sub.8, Z represents the atoms necessary to complete a 5-membered or 6-membered heterocyclic ring which includes X and N, and the 3-position of the pyrazolone ring may independently be substituted or unsubstituted;R.sub.5 is alkyl, alkenyl, or arylalkyl any of which may be substituted or unsubstituted, or R.sub.5 may form a ring with a 3-position substituent on the pyrazolone ring or a 4-position substituent on the benzo ring;R.sub.7 is alkyl, alkenyl, aryl, or heterocycle, any of which may be substituted or unsubstituted, or H; andR.sub.8 is alkyl, alkenyl, or arylalkyl any of which may be substituted or unsubstituted, or H.

Abstract: Reduction of reflection from an integrated circuit substrate during exposure of a photoresist layer on a surface such as an integrated circuit wafer is minimized by incorporating an antireflective coating between the photoresist layer and the integrated circuit substrate. The antireflective layer, after exposure and development of the photoresist layer, is preferably removed by exposing the non-masked antireflective layer to activating radiation while heating the coating to induce a solubilizing reaction in an antireflective coating and a curing reaction in an overlying photoresist mask. Thereafter, the exposed portions of the antireflective layer are removed by treatment with a suitable developer.

Abstract: A polymeric UV absorbing compound which comprises UV absorbing monomeric units of at least 0.05 weight percent of ionic units which have an ionizable group which is ionized at all pH values between 5 to 10. Photographic elements which contain such polymeric compounds and methods of making such polymers and photographic elements, are also provided. The polymeric UV absorbing compounds are directly dispersible in water.

Abstract: An ultraviolet absorbing polymer, and photographic elements containing such a polymer, which polymer includes units formed from monomers of the structure of formula (II): A photographic element containing an ultraviolet absorbing polymer which includes units formed from monomers of the structure of formula (I): ##STR1## wherein: p and q are, independently, 0 or 1;L and L.sub.2 are bivalent linking groups;R.sub.9 is a non-hydrogen group which does not contain any unsaturated carbon-carbon bonds;R.sub.10 is H, alkyl group, aryl group, or heterocyclyl group;A is an ethylenically unsaturated polymerizable group; the benzene ring of the benzotriazole and the 2'-hydroxyphenyl ring each may be further substituted or unsubstituted.

Abstract: A process for forming a nanocrystalline dispersion of a photographically useful compound in a continuous phase comprising the steps of:providing a nanoamorphous dispersion of said photographically useful compound in said continuous phase, andannealing said nanoamorphous dispersion to transform the physical state of said chemical compound therein to a crystalline physical state and to thereby obtain a nanocrystalline dispersion is disclosed.

Abstract: The invention relates to compounds of the formula I ##STR1## in which n is 1 or 2, A is CH or a nitrogen atom, and the other radicals R.sup.1 to R.sup.25 are as defined in claim 1.The compounds of the formula I can advantageously be employed for stabilizing organic material against the harmful effect of light, oxygen and/or heat.

Abstract: Changing (varying, irregular) resist thickness on semiconductor wafers having irregular top surface topography or having different island sizes, affects the percent reflectance (and absorption efficiency) of incident photolithographic light, and consequently the critical dimensions of underlying features being formed (e.g., polysilicon gates). A low solvent content resist solution that can be applied as an aerosol provides a more uniform thickness resist film, eliminating or diminishing photoresist thickness variations. A top antireflective coating (TAR) also aids in uniformizing reflectance, despite resist thickness variations. The two techniques can be used alone, or together. Hence, better control over underlying gate size can be effected, without differential biasing.

Abstract: There is disclosed a silver halide photographic material having a support and at least one silver halide emulsion layer on at least one side of the support, which comprises a layer containing at least one ultraviolet absorbent that is present on one or both surfaces or a support containing at least one ultraviolet absorbent, the total content of the ultraviolet absorbent being 0.01 to 10 g/m.sup.2, and the support being made of a polyethylene naphthalate or its derivative. As the ultraviolet absorbent, at least one of compounds represented by formula (I) to (VI) is preferably used.