Abstract: Systems and methods for rinsing one or more pellicles during fabrication, including immersing and soaking the one or more pellicles in a rinse bath solution for a particular time period, forming a top layer above the rinse bath solution, the top layer having a lower surface tension than the rinse bath, and withdrawing the one or more pellicles through the top layer for drying.

Abstract: The present disclosure provides a method for exposure and development, a system for controlling exposure and a system for exposure and development. The method for exposure and development is configured to expose and develop a substrate when the substrate having a size larger than that of a mask. The method includes: exposing and developing a plurality of different regions of the substrate by means of the mask respectively, wherein the plurality of different regions are pieced to form an entire region which needs to be exposed and developed.

Abstract: A method is provided for fabricating a photolithographic mask. The method includes providing a transparent substrate; and forming an opaque layer on the transparent substrate. The method also includes writing layout patterns with at least one sub-resolution assistant feature with non-uniform size along a longitudinal direction to increase an adhesion force between the sub-resolution assistant feature with non-uniform size along the longitudinal direction and the transparent substrate in the opaque layer. Further, the method include cleaning residual matters generated by writing the layout patterns in the opaque layer. Further, the method also includes spin-drying the transparent substrate with the layout patterns and the sub-resolution assistant feature with non-uniform size along the longitudinal direction.

Abstract: One embodiment of the present invention provides a light reflection type lithography mask including: a substrate; and a reflection layer. The reflection layer is formed on the substrate, and has a first pattern and a second pattern as viewed from above. The second pattern is located so as to be closest to one of one side and the other side of the first pattern in a first direction. A reflectivity at a portion corresponding to the first pattern is different from a reflectivity at a portion corresponding to the second pattern.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to modified surfaces of extreme ultraviolet lithography photomasks and methods of manufacture. The structure includes a reflective surface having a patterned design, and a black border region at edges of the patterned design. The black border region includes a modified surface morphology to direct light away from reaching a subsequent mirror.

Abstract: A photolithography method and system based on a high step slope are provided. The method includes: S1, manufacturing a sacrificial layer with a high step slope on a substrate; S2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask; and S4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.

Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask. A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1, the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: CN?9.0×10?6×RM4?1.65×10?4×RM3?7.718×10?2×RM2+3.611×RM?21.084??Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

Abstract: Provided is a mask blank, including: a resist layer formed by a chemically amplified resist; a protective layer formed to coat the resist layer; and a buffer layer provided between the resist layer and the protective layer, wherein the protective layer contains an acidic substance, a basic substance, and a salt generated by a reaction between the acidic substance and the basic substance, and the buffer layer has a portion which is a surface layer portion of a pre-coated resist layer before being coated by the protective layer, and in which the pre-coated resist layer and the protective layer 4 are in contact with each other, and this portion is formed by receiving the acidic substance, the basic substance, and the salt moved from the protective layer 4.

Abstract: A pattern data generation method includes setting drawing pattern data based on design pattern data including first and second pattern regions. The drawing pattern data includes third and fourth pattern regions. The method includes setting the width of the third pattern region to a third width. The method includes setting first and second irradiation amount data based on the drawing pattern data. The method includes calculating a first thickness of the first pattern region and a second thickness of the second pattern region based on the first irradiation amount data, and calculating a third thickness of the third pattern region based on the second irradiation amount data. The method includes calculating, based on the first to third widths and the first to third thicknesses, a range of a first exposed region exposed onto a patterning substrate.

Abstract: Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure pattern alteration software application provides for line wave reduction by serrating polygon edges at affected angles to reduce edge placement errors during maskless lithography patterning in a manufacturing process.

Abstract: In a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon, the halftone phase shift film is composed of a silicon base material consisting of silicon, nitrogen and 0-6 at % of oxygen, has a refractive index n of at least 2.4, an extinction coefficient k of 0.4-0.7, and a thickness of 40-67 nm. The halftone phase shift film is thin enough to be advantageous for photomask pattern formation, has chemical resistance against chemical cleaning, and maintains a necessary phase shift for phase shift function and a necessary transmittance for halftone function.

Abstract: A method and system for: forming a first rectangular shape with photomask writing equipment, using a first sub-threshold dosage on a photoresist layer of a photomask substrate; forming an overlapping second rectangular shape with the photomask writing equipment using a second sub-threshold dosage on the photoresist layer, the second rectangular shape being rotated relative to the first rectangular shape to form one of: a hexagonal overlap area and an octagonal overlap area, that exposes the photoresist layer to at least a threshold dosage; and forming a photomask, based on developing the exposed photoresist layer, to provide optical transmission corresponding to the one of: the hexagonal overlap area of at least the threshold dosage and the octagonal overlap area of at least the threshold dosage, for use by a photolithography system to write any of a contact, a via, or a curvilinear shape on an integrated circuit substrate.

Abstract: Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.

Abstract: A mask blank and a mask are provided. The mask blank includes a substrate, and an etching stop layer embedded in the substrate. The mask includes the mask blank with the embedded etching stop layer, and a plurality of recesses formed in the mask blank. The recess exposes the embedded etching stop layer.

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.

Abstract: A mold base of an embodiment is a mold base for use in manufacture of a mold that has a porous alumina layer over its surface, including: a base; and an aluminum alloy layer provided on the base, wherein the aluminum alloy layer contains aluminum, a non-aluminum metal element, and nitrogen. The aluminum alloy layer of the mold base of an embodiment of the present invention has high specularity.

Abstract: Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by an optical inspection subsystem for the design printed on the wafer. Generating the rendered image includes one or more steps, and the computer subsystem(s) are configured for performing at least one of the one or more steps by executing a generative model. The computer subsystem(s)) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.

Abstract: Methods for a lithographic process used to pattern fins for fin-type field-effect transistors (FinFETs). A first plurality of hardmask sections may be formed, and sacrificial spacers may be formed on vertical sidewalls of the first plurality of hardmask sections. Each of the first plurality of hardmask sections is comprised of a first material. Gaps between the sacrificial spacers are filled with a second material, which is selected to etch selectively to the first material, in order to define a second plurality of hardmask sections each comprised of the second material.

Abstract: A pellicle is proposed in which the agglutinant layer which enables the pellicle to adhere to a photomask is doped with a de-foaming agent which depends on a reactive fluorine-modified silicone oil for its anti-foaming performance, and typically such reactive fluorine-modified silicone oil has a vinyl group at both ends of its molecular chain.

Abstract: The present disclosure provides a method of repairing a mask. The method includes receiving a mask that includes a patterned feature, the patterned feature producing a phase-shift and having a transmittance; identifying a defect region on the mask; and forming a repair feature over the defect region on the mask, wherein forming the repair feature includes forming a first patterned material layer over the defect region and forming a second patterned material layer over the first patterned material layer to form the repair feature, the repair feature producing the phase-shift and having the transmittance.

Abstract: A processor receives an integrated circuit design, divides the integrated circuit design into a test portion and a remaining portion, and adds sub-resolution assist features (SRAFs) having different size and spacing parameters to the test portion of the integrated circuit design to generate a single test pattern. Exposure and development equipment performs a single exposure and development process of the single test pattern to produce a single test photoresist. The processor analyzes the single test photoresist to determine which of the size and spacing parameters are unacceptable and which are acceptable, based on differences between the single test photoresist and a model photoresist that the test portion of the integrated circuit design without the SRAFs would produce. The processor adds SRAFs having the acceptable size and spacing parameters to the remaining portion of the integrated circuit design.

Abstract: A glass substrate for a mask blank has main surfaces. A root-mean-square surface roughness (RMS) in at least one main surface is 0.15 nm or less. An aspect ratio of a surface profile (Str) of the main surface in accordance with ISO 25178-2:2012, where s=0.2, is 0.30 or more. The aspect ratio is determined through measurement of the surface profile at measurement intervals of 0.2 nm or less in a measurement range of 100 nm×100 nm using an atomic force microscope.

Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Abstract: A halftone phase shift photomask blank is provided comprising a transparent substrate and a halftone phase shift film thereon having a phase shift of 150-200° and a transmittance of 9-40%. The halftone phase shift film consists of a transition metal, Si, O and N, has an average transition metal content of at least 3 at %, and is composed of a plurality of layers including a stress relaxation layer having an oxygen content of at least 3 at % and a phase shift adjusting layer having a higher oxygen content of at least 5 at %.

Abstract: A mask, comprising an opaque region, a first semi-transparent region, and a second semi-transparent region. The transmittance of the second semi-transparent region is less than that of the first semi-transparent region. The mask solves the over-etching problem caused by the difference between the thicknesses of photoresist in different regions.

Abstract: In a method for cleaning photo masks having patterns with smallest line-space dimensions below 200 nm, a surfactant composition A is used, wherein A contains at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl and wherein A exhibits, at a 1% by weight aqueous solution, a static surface tension below 25 mN/m.

Abstract: Disclosed are apparatus and methods for determining overlay error in a semiconductor target. For illumination x-rays having at least one angle of incidence (AOI), a correlation model is obtained, and the correlation model correlates overlay error of a target with a modulation intensity parameter for each of one or more diffraction orders (or a continuous diffraction intensity distribution) for x-rays scattered from the target in response to the illumination x-rays. A first target is illuminated with illumination x-rays having the at least one AOI and x-rays that are scattered from the first target in response to the illumination x-rays are collected. An overlay error of the first target is determined based on the modulation intensity parameter of the x-rays collected from the first target for each of the one or more diffraction orders (or the continuous diffraction intensity distribution) and the correlation model.

Abstract: The disclosure is directed to a method for designing a lithographic mask to print a pattern of structural features, wherein an OPC-based methodology may be used for producing one or more simulated patterns as they would be printed through the optimized mask. A real mask is then produced according to the optimized design, and an actual print is made through the mask. To evaluate the printed pattern and the PW on wafer more accurately, experimental contours are extracted from the CD-SEM measurements of the printed pattern. The verification of the mask is based on a comparison between on the one hand the contour obtained from the printed pattern, and on the other hand the intended pattern and/or the simulated contour. A direct comparison can be made between simulation and experiment, without losing all the pieces of info contained in each single CD-SEM picture.

Abstract: According to one embodiment, a mask includes a substrate, first and second pattern portions. The substrate includes a first surface, and the substrate is light transmissive. The first pattern portion includes first optical members. The first optical members are provided on the first surface. A light transmittance of the first optical members is lower than a light transmittance of the substrate. A distance between the adjacent two first optical members is a first distance. The second pattern portion includes second optical members. The second optical members are provided on the first surface. A light transmittance of the second optical members is lower than the light transmittance of the substrate. A distance between the adjacent two second optical members is a second distance. A first phase of a light penetrating the first pattern portion is different from a second phase of a light penetrating the second pattern portion.

Abstract: The present invention relates to a method for manufacturing a master mold, a master mold manufactured by the method, a method for manufacturing a transparent photomask, a transparent photomask manufactured by the method, and a method for manufacturing a conductive mesh pattern by using the transparent photomask.

Abstract: A display panel and a manufacturing method thereof, a mask and a manufacturing method thereof, and a display device. The display panel includes a first display substrate and a second display substrate arranged to be opposed to each other, and main spacers and assistant spacers arranged between the first display substrate and the second display substrate. The main spacers and the assistant spacers are both arranged on the first display substrate. The main spacers have a height equal to a distance from the first display substrate to the second display substrate to support the first display substrate and the second display substrate. The assistant spacers have a height smaller than that of the main spacers. An end surface of a suspending end of at least one of the assistant spacers is planar and/or an end surface of a suspending end of at least one of the assistant spacers is convex.

Abstract: A pellicle for a reflective mask including a pellicle body, a light shielding pattern, a grating pattern, and a pellicle frame. The pellicle body includes a central region and a peripheral region, wherein the peripheral region surrounds the central region. The light shielding pattern is formed on the peripheral region of the pellicle body; the grating pattern is formed on the light shielding pattern, and the pellicle frame is located under the peripheral region of the pellicle body, and the pellicle frame is configured to support the pellicle body.

Abstract: An illustrative method includes providing a layout of at least a portion of a photomask, the layout comprising a plurality of target features, each target feature having a shape in accordance with a corresponding one of at least one target shape, for each of the target shapes, providing a local map specifying a respective value of a local sub-resolution assist feature (SRAF) usefulness for each of a plurality of positions relative to the target shape, generating a global usefulness map specifying a respective global SRAF usefulness for each of the plurality of positions relative to at least a portion of the photomask on the basis of the assignment of the values of the local SRAF usefulness.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Abstract: A method for being used in a lithography process is provided. The method includes receiving a first mask, a second mask and a substrate with a set of baseline registration marks. A first set of registration marks is formed on the substrate using the first mask and a first exposure tool, and a first set of overlay errors is determined. The first set of registration marks is removed and a second set of registration marks is formed on the substrate using the second mask and a second exposure tool. A second set of overlay errors is determined. A set of tool-induced overlay errors is generated from the first and second sets of overlay errors and used in fabricating a third mask. The third mask can then be used in the lithography process to accommodate the overlay errors caused by different exposure tools, different masks, and different mask writers.

Abstract: A coating device includes an upper stage, a lower stage and a spraying part. The upper stage masks an upper surface of a display panel. The lower stage masks a lower surface of the display panel. The spraying part sprays ink to a side surface of the display panel. The side surface of the display panel is exposed between the upper stage and the lower stage. The coating device includes the upper stage and the lower stage, so that the coating device may form a coating layer of uniform thickness by precisely spraying ink. In addition, a cross-section of the coating layer may be precisely formed having specific shape such as an L or C shape. A display apparatus having high light usage efficiency and reduced light leakage may be provided by using the coating device.

Abstract: A photomask blank comprising a transparent substrate and a chromium-containing film is provided. The chromium-containing film is formed of a chromium compound containing Cr, N, and optionally O, has a total Cr+N+O content?93 at %, and meets the formula: 3Cr?2O+3N. A chromium compound layer meeting a first composition having a N/Cr atomic ratio?0.95, a Cr content ?40 at %, a Cr+N content?80 at %, and an O content?10 at % accounts for 10-70% of the overall thickness of the chromium-containing film.

Abstract: A photomask blank comprising a transparent substrate and a chromium-containing film is provided. The chromium-containing film is constructed by one or more chromium compound layers which are formed of a chromium compound containing Cr, N and optionally O, and have a composition having a Cr content ?30 at % and a total Cr+N+O content ?93 at %, and meeting the formula: 3Cr?2O+3N. A chromium compound layer meeting a first composition having an N/Cr atomic ratio ?0.95, a Cr content ?40 at %, a total Cr+N content ?80 at %, and an O content ?10 at % is included to a thickness of more than 70% to 100% of the overall thickness of the chromium-containing film.

Abstract: A semiconductor layout pattern includes a device layout pattern, a plurality of rectangular first dummy patterns having a first size, a plurality of rectangular second dummy patterns having second sizes, and a plurality of bar-like third dummy patterns having varied third sizes. The pattern densities are smartly equalized by positioning the second dummy patterns.

Abstract: A mask includes a doped substrate having a first region, a second region and a third region. The doped substrate in the first region has a first thickness to define a first mask state and in the second region has a second thickness to define a second mask state. The second thickness is different than the first thickness. The mask also includes an absorption material layer disposed over the third region to define a border region.

Abstract: Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (?) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

Abstract: A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.

Abstract: A photomask includes a light transmission substrate having a transfer region and a frame region, a light-transmitting region exposing a portion of the light transmission substrate in the transfer region corresponding to a transfer pattern, a phase shift region surrounding the light-transmitting region in the transfer region. The phase shift region includes a first phase shift region surrounding the light-transmitting region and a second phase shift region surrounding the first phase shift region. A first phase shift pattern is disposed on the light transmission substrate in the first phase shift region, and a plurality of second phase shift patterns are disposed on the light transmission substrate in the second phase shift region.

Abstract: The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.

Abstract: The present disclosure relates to a gray-tone mask (GTM) and the manufacturing method thereof. The GTM includes at least one first light-blocking bar and at least on second light-blocking bar. A first gap is formed between any two adjacent first light-blocking bars. The second light-blocking bar is arranged within the first gap. The first gap includes a first crack being formed between adjacent first light-blocking bar and second light-blocking bar, wherein a length of the second light-blocking bar is “a”, a width of the first crack is “b”, and a ratio of the length of the second light-blocking bar (“a”) to the width of the first crack (“b”) satisfy the relationship: 0.9<a/b<1.1. In this way, the design scope is limited. Thus, a reasonable GTM design may be obtain and the experimental cost may be reduced.

Abstract: An extreme ultraviolet lithography (EUVL) system for patterning a semiconductor wafer includes an extreme ultraviolet (EUV) mask. The EUV mask includes first and second states, and further includes a polygon region and an open-spacing region. The polygon region includes a plurality of main polygons separated by a plurality of first fields. The open-spacing region is located outside the polygon region, and includes a plurality of sub-resolution polygon and second fields, and does not include any main polygons. The system also includes a nearly on-axis illumination (ONI) to expose the EUV mask and optics to direct diffracted lights reflected from the EUV mask towards the semiconductor wafer.

Abstract: Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

Abstract: A EUV mask comprises a low thermal expansion material (LTEM) substrate, a reflective multi-layer (ML) over the LTEM substrate, and a patterned absorber layer over the reflective ML. The reflective ML includes a defect. The EUV mask further comprises a mark associated with the defect. The mark is one of: a deposit over the patterned absorber layer at a distance offset from the defect, and a cavity into the patterned absorber layer in an area over the defect.

Abstract: A specialized low drop-out voltage regulator (LDO) computer system stores a generalized base model of an LDO. The base model includes values representing a circuit topology and a set of analog behavior blocks associated with the generalized LDO. Values of a set of operational parameters associated with a specific model of LDO are input to the specialized LDO computer system from a data sheet associated with the specific model of LDO. The specialized LDO computer system transforms the set of operational parameters into a computer model of the specific LDO. The LDO-specific computer model is output as a netlist or as a set of instantiation control values to control external hardware such as an integrated circuit die tooling system or a computer graphical display system.