Abstract: There is provided an improved light receiving member comprising a substrate and a light receiving layer formed by laminating a first layer having photoconductivity which is constituted with an amorphous material containing silicon atoms as the main constituent atoms and germanium atoms, and a second layer constituted with an amorphous material containing silicon atoms, carbon atoms and an element for controlling the conductivity. The germanium atoms contained in the first layer is in the state of being unevenly distributed in the entire layer region or in the partial layer region adjacent to the substrate. The first layer may contain one or more kinds selected from an element for controlling the conductivity, oxygen atoms and nitrogen atoms in the entire layer region or in the partial layer region.

Abstract: An electrophotographic image forming member comprises a substrate and a photoconductive layer overlying the substrate and composed of a hydrogenated amorphous silicon containing 0.001-1000 atomic ppm of carbon as an impurity based on silicon.

Abstract: An electrophotographic photoreceptor includes a conductive substrate and a photoconductive layer, provided on the conductive substrate, for generating photocarriers upon light radiation. At least part of the photoconductive layer contains and has a plurality of thin microcrystalline semiconductor layers containing silicon as a major component, and at least one element selected from the group consisting of carbon, oxygen, and nitrogen. The adjacent thin microcrystalline semiconductor layers have different element concentrations. The element concentrations are continuously changed near the interfaces of the thin microcrystalline semiconductor layers.

Abstract: A light receiving member has a support and a light receiving layer. The support has an uneven-shaped surface of a plurality of spherical dimples, each dimple having an identical radius of curvature R and an identical width D, wherein the ratio D/R of the width D to the radius of curvature R is from 0.03 to 0.07. The light receiving layer is a multi-layered structure having an outer layer which formed from an amorphous material containing silicon atoms as the main constituent and at least one of hydrogen atoms and halogen atoms. The light receiving layer contains an inner layer of amorphous silicon which also contains germanium and/or tin and hydrogen and/or halogen.The light receiving member, when used with a coherent laser beam as an optical source, acts to prevent the occurrence of an interference fringe pattern during image formation.

Abstract: An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer, and a surface layer on an aluminum substrate drum, in the order stated. The photoconductive layer of this electrophotographic photoreceptor has a superlattice layer of a hetero-junction constituted by alternately stacking thin a-Si:H layers and thin .mu.c-SiC:H layers. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-Si:H serves as a potential barrier, and .mu.c-SiC:H serves as a potential well. When light is radiated on the photoconductive layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tunneling effect, and propagate in the photoconductive layer.

Abstract: An electrophotographic sensitized body having a photoconductive layer comprising hydrogenated amorphous silicon on a substrate which comprises conductive material selected from the group consisting of A1, A1-Si (0.2-1.2 wt. %) - Mg (0.45-1.2 wt. %) alloy, super duralmine and extra super duralmine. Provided between the substrate and the photoconductive layer is a diffusion blocking layer 0.005-5 microns in thickness comprising a material selected from the group consisting of titanium nitride, tantalum nitride, hafnium nitride, platinum silicide, nickel silicide, palladium silicide, titanium silicide, hafnium silicide, tantalum silicide, tungsten silicide, vanadium silicide, niobium silicide, molybdenum silicide, zirconium silicide, tungsten carbide, titanium carbide, molybdenum carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide and metallic chrome.

Abstract: An electrophotographic member has an electrophotographic substrate and a light receiving layer having (i) a 0.01 to 10 .mu.m thick charge injection inhibition layer, (ii) a 1 to 100 .mu.m thick photoconductive layer and (iii) a 0.003 to 30 .mu.m thick surface layer. The charge injection inhibition layer includes a polycrystal material containing silicon atoms as the main constituent, 30 to 5.times.10.sup.4 atomic ppm of a conductivity controlling element of Group III and Group V elements uniformly or nonuniformly distributed in the thickness direction and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The photoconductive layer is an amorphous semiconductor material containing silicon atoms as the main constituent and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The surface layer includes an amorphous material: A--(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1 to 0.99999 and y is 0.6 to 0.999.

Abstract: An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer, and a surface layer on an aluminum substrate drum, in the order stated. The photoconductive layer of this electrophotographic photoreceptor has a superlattice structure constituted by alternately stacking thin a-SiC:H layers having carbon contents different from each other. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-SiC:H having a higher carbon content serves as a potential barrier, and a-SiC:H having a lower carbon content serves as a potential well. When light is radiated on the photoconductive layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tuneling effect, and propagate in the photoconductive layer.

Abstract: An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer including a charge-generating layer and a charge-transportation layer, and a surface layer on an aluminum substrate drum, in the order stated. The charge-generating layer of this electrophotographic photoreceptor has a superlattice structure of a heterojunction constituted by alternately stacking thin a-Si:H layers and thin .mu.c-SiC:H layers. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-Si:H serves as a potential barrier, and .mu.c-SiC:H serves as a potential well. When light is radiated on the charge-generating layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tunneling effect, and propagate in the charge-generating layer. In addition, the charge-transporting layer is formed by a-Si:H or .mu.

Abstract: A laminated-type photosensitive member having an aluminum substrate, and a charge generating layer comprised of an organic pigment dispersed in resin, and a charge transporting layer, the aluminum substrate is anodized to form a alumite layer which has a certain thickness, a certain crystalline/amorphous aluminum oxide molar ratio, and a certain impedance; the anodized aluminum layer is sealed; and/or an undercoat layer is formed on the anodized layer. By such arrangement it is possible to obtain a laminated-type photosensitive member excellent in properties of photosensitive members, in particular, good anti-charge injection and retification characteristics.

Abstract: A light receiving member has a support and a light receiving layer. The support has an uneven-shaped surface of a plurality of spherical dimples formed by the impact of a plurality of rigid true spheres on the surface of the support. Each of the dimples has an identical radius of curvature R and an identical width D, wherein the radio D/R of the width D to the radius of curvature R is from 0.03 to 0.07. The light receiving layer is a multi-layered structure having a free surface which formed from an amorphous material containing silicon atoms as the main constituent, at least one of oxygen atoms, carbon atoms and nitrogen atoms, and at least one of hydrogen atoms and halogen atoms. The light receiving layer contains a layer region which functions as a photosensitive layer.The light receiving member, when used with a coherent laser beam as an optical source, acts to prevent the occurrence of an interference fringe pattern during image formation.

Abstract: A light receiving member comprises a support and a light receiving layer having a photosensitive layer composed of a-Si(Ge,Sn)(H,X) or a-Si(Ge,Sn)(O,C,N)(H,X) and a surface layer composed of A-Si(O,C,N)(H,X), said support having a surface provided with irregularities composed of spherical dimples, each of which has an inside face provided with minute irregularities. The optical band gap possessed by the surface layer and the optical band gap possessed by the photosensitive layer on which the surface layer is disposed are matched at their interface. The light receiving member can effectively prevent the occurrence of interference fringes in the formed images. In addition, the light-receiving member forms visible images of excellent quality even when coherent laser beams are used as the light source. The member also effectively prevents reflection of incident light at the interface between the surface layer and the photosensitive layer.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second layer region containing Group III atoms of the Periodic Table Such that said Group III atoms are continuously distributed in the direction of the layer thickness and enriched at the support side and wherein oxygen is absent from said amorphous layer exclusive of the first layer region, said first layer region being present internally in the support side portion of the amorphous layer, and there being the following relationship:To/T.ltoreq.1where To is the layer thickness of the first layer region and T results from subtracting To from the layer thickness of the amorphous layer.

Abstract: This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer.This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.

Abstract: The improvements in the light receiving members in which an aluminum material being used as the substrate for use in electrophotography and in other various devices. The improved light receiving member to be provided is characterized in that a buffer layer functioning to improve the bondability between the aluminum substrate and a light receiving layer to be disposed thereon is disposed between the substrate and said light receiving layer.The improved light receiving member is satisfactorily free from various problems due to insufficient bondability between the aluminum substrate and the light receiving layer imposed thereon which are found in the conventional light receiving members.

Abstract: A light-receiving member for electrophotography comprises a substrate and a light-receiving layer provided on the substrate comprising a photoconductive layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as the constituent in a matrix of silicon atoms and a surface layer comprising an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms and the constituents, said surface layer being changed in the distribution concentration in the layer thickness direction of the constituent elements such that matching optical gap is obtained at the interface with said photoconductive layer, and the maximum distribution concentration of the hydrogen atoms within said surface layer being 41 to 70 atomic percent.

Abstract: An electrophotographic photosensitive member comprising (a) a substrate made of an electrically conductive material, (b) a silicide layer formed on the surface of the substrate, and (c) a photoconductive layer superposed on the silicide layer being composed chiefly of amorphous silicon; which is usable for copying machines and intelligent copying machine.

Abstract: A planar electrophotographic imaging member comprising a magnetically attractable, electrically conductive layer, a thin aluminum layer, an aluminum oxide blocking layer and at least one x-ray photoconductive selenium alloy insulating layer. This planar electrophotographic imaging member may be fabricated by providing a planar substrate comprising a magnetically attractible, electrically conductive layer and a thin aluminum layer bearing an aluminum oxide blocking layer, mounting the substrate on a magnetic support member, the blocking layer facing away from the magnetic support member, and applying at least one x-ray photoconductive insulating layer to the blocking layer. The planar electrophotographic imaging member may be overcoated while the substrate remains mounted on the magnetic support member.

Abstract: A light receiving member comprises a support and a light receiving layer of a multi-layered structure having at least a photosensitive layer composed of an amorphous silicon, said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving layer may contain a surface layer comprising an outer abrasion-resistant layer and an inner reflection prevention layer, wherein the optical band gap possessed by the surface layer and optical band gap possessed by the photosensitive layer on which the surface layer is disposed are matched at their interface. The light receiving member can effectively prevent the occurrence of interference fringes in the formed images, forming visible images of excellent quality even when coherent laser beams are used as the light source.

Abstract: Since a barrier layer of an electrophotographic photosensitive member interposed between a photoconductive layer and conductive substrate is formed of a first BN layer of high resistivity laminated with a second .mu.c-Si layer having a rectifying function, the charging capacity is elevated and the residual potential is reduced. A photoconductive layer prepared from a-Si has a high sensitivity to light rays having a broad range of wavelengths. A surface layer prepared from .mu.c-Si containing nitrogen N, carbon C or oxygen O has a high charge-retaining capability.

Abstract: An imaging member comprised of a supporting substrate, a barrier layer of hydrogenated amorphous silicon nitride with dopants, a hydrogenated amorphous silicon photoconducting layer, and in contact therewith a top overcoating layer of nonstoichiometric silicon nitride.

Abstract: The present invention provides a photosensitive member comprising a carrier transporting layer of hydrogen-containing carbon and an adhesive layer of hydrogen-containing carbon, said adhesive layer comprising at least one element selected from silicon, germanium and aluminum. The photosensitive member of the present invention is excellent in a charge transporting property, an adhesive property of a substrate with a hydrogen-containing layer, a chargeability, a rigidity and resistances to corona, acid, moisture and heat.

Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

Abstract: The present invention provides a new photosensitive member which comprises a hydrogen-containing carbon undercoat layer controlled in the polarity by an element of IIIA or VA group, a hydrogen-containing C:H charge transporting layer and a charge generating layer, which has an excellent charge transortability, a charging ability, and preventing properties of charge injection and of increase of residual potential.

Abstract: The invention disclosed relates to a photosensitive member with an amorphous silicon photoconductive layer. On the photoconductive layer, an insulating layer including amorphous silicon, carbon and oxygen is formed. The amount of carbon is 5 to 65 atomic % and less than 10 atomic % for oxygen if both carbon and oxygen are included uniformly throughout the layer. An amorphous silicon barrier layer containing either oxygen and boron or oxygen and carbon may be formed between the substrate and the photoconductive layer.

Abstract: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer, a photoconductive layer and a surface layer, the charge injection inhibition layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %.

Abstract: A barrier layer of amorphous silicon carbide is formed on aluminum drum, and a photoconductive layer formed of a mixture of para-.mu.c-Si and a-Si is formed on the surface of the barrier layer. An a-Si surface layer is formed on the photoconductive layer. When the electrophotographic photoreceptor is exposed to a light ray, carriers are generated by the ray, which is visible or has a near-infrared wavelength, due to a smaller energy gap of the para-.mu.c-Si in the layer.

Abstract: An electrophotographic photosensitive member wherein a photoconductive layer prepared from amorphous silicon is interposed between a barrier layer and surface layer, both prepared from boron nitride, and which is characterized in that it has a high specific resistivity, and, when applied as a barrier layer, indicates a high charge retention capability, strains in said barrier layer are reduced, the surface layer absorbs very little light and allows for the permeation of the greater part of the incoming light rays, thus preventing the photosensitivity of a photoconductive layer and the residual potential from being deteriorated, and since the concentration of boron varies in the boundary of the respective layer across their thickness, the photoconductive property can be sustained and the exfoliation of the layers can be avoided.

Abstract: A first blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. The first blocking layer contains 1.times.10.sup.-4 to 1.0 atomic % of a Group III or V element in the Periodic Table. A second blocking layer formed of a-Si:C or a-Si:N on the first blocking layer contains 1.times.10.sup.-8 to 1.times.10.sup.-4 atomic %. The second blocking layer has a thickness of 5 to 40 .mu.m, and a photoconductive layer formed of a-Si is stacked on the second blocking layer to a thickness of 0.5 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.

Abstract: A photoconductive layer of an electrophotographic photoreceptor has a super lattice structure obtained by alternately stacking thin layers (the thickness falls within the range of 30 to 200 .ANG.) of at least two types of amorphous semiconductors having different optical band gaps. In the super lattice structure, when the layer having a narrow bandgap is sandwiched between the layers having wide bandgaps, a quantum well is formed. By the quantum effect, electrons in the well are shifted to cause high mobility of carriers. When the super lattice structure is applied to the photoconductive layer of the electrophotographic photoreceptor, the number of carriers generated at the interface between the thin layers is large.

Abstract: An improved enhancement layer operatively disposed between the top protective layer and the photoconductive layer of an electrophotographic device. The enhancement layer is specifically tailored from a semiconductor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotographic device from the photoconductive layer thereof.

Abstract: A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting a photoconductivity, and a surface layer comprising an amorphous material containing silicon atoms and carbon atoms provided on the substrate successively from the substrate side, said light-receiving layer having at least one pair of nonparallel interfaces within a short range and said nonparallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate; a first layer of a photoconductive layer on the barrier layer, and a second layer on the first layer. Formed of microcrystalline silicon containing hydrogen, the first layer is highly sensitive to long-wavelength light. The second layer contains hydrogen and at least one element selected from carbon, oxygen, and nitrogen. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.

Abstract: A first blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. The first blocking layer contains 1.times.10.sup.-4 to 1.0 atomic % of a Group III or V element in the Periodic Table. A second blocking layer formed of a-Si:C or a-Si:N on the first blocking layer contains 1.times.10.sup.-8 to 1.times.10.sup.-4 atomic %. The second blocking layer has a thickness of 5 to 40 .mu.m, and a photoconductive layer formed of a-Si is stacked on the second blocking layer to a thickness of 0.5 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: A process for making photoconductive semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates.The process includes coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing amorphous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer, a photoconductive layer and a top blocking layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members can include a top blocking enhancement layer and/or an improved infrared photoresponsive layer.

Abstract: A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: An improved enhancement layer operatively disposed between the top protective layer and the photoconductive layer of an electrophotographic device. The enhancement layer is specifically tailored from a semiconductor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotographic device from the photoconductive layer thereof. A method of substantially improving charge fatigue and image flow characteristics through the use of such an improved enhancement layer is also disclosed.

Abstract: The present invention relates to an electrophotographic recording material and to a process for manufacturing it. The material comprises an electrically conductive substrate and a photoconductive layer of amorphous silicon and hydrogen applied thereto. The recording material is characterized by only a single photoconductive layer having an oxygen component of about 1 ppm to 1 atom percent. The recording material is produced by means of cathode sputtering.

Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. The photoconductive layer is formed of a microcrystalline silicon layer, whose crystallinity varies all the way through its thickness. The higher the crystallinity of the microcrystalline silicon layer, the more distinguishable are the crystalline properties, the narrower is the optical band gap, and the higher is the sensitivity to long-wavelength light. If the crystallinity becomes lower, then the amorphous properties are enhanced, and the resistance is increased in proportion. Thus, the chargeability and the sensitivity to long-wavelength light of the microcrystalline silicon layer can be improved by varying its crystallinity in the photoconductive layer.

Abstract: A stable high resistant transparent coating is formed by choosing an undoped wide band gap semiconducting oxide, and by forming a film from elements constituting the undoped oxide and from a dopant which is chosen so as to form a doped wide band gap semiconducting oxide, the doped oxide having an electrical resistance greater than the undoped oxide, the electrical resistance of the doped oxide being such that it equals an optimum value when the coating composition is inherently stable.

Abstract: A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on said substrate successively from the substrate side.

Abstract: Provided is a conductive sheet comprising an organic polymer sheet (A) and a conductive layer, wherein said conductive layer comprises at least one thin metal oxide layer (B) having a thickness within the range of 5 to 1000 .ANG. and at least one metal layer (C) consisting mainly of at least one metal selected from the group consisting of Pt, Pd, Rh, Ru, and Ir, and wherein the surface resistivity of said conductive layer is within the range of 10.sup.4 to 10.sup.9 ohm per square.

Abstract: A light receiving member comprises a substrate for light receiving member, a surface layer having reflection preventive function and a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on the substrate, said light receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: The present invention relates to a photosensitive member which comprises on a conductive substrate a first layer of amorphous silicon: germanium; a second layer of amorphous silicon with a rectifying property and a third layer of amorphous silicon. Using this photosensitive member, an image is formed by charging, exposing to a light of short wavelength, exposing to an optical image of long wavelength to form a latent image and developing the latent image. This latent image can be repeatedly used to form a plurality of copies.

Abstract: A light-receiving member comprises a light-receiving layer of a multi-layer structure having at least one photosensitive layer on a substrate, said photosensitive layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction, each of said non-parallel interfaces being smoothly continuous in the direction in which they are arranged.

Abstract: A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having at least one photosensitive layer and a surface layer having reflection preventive function provided successively from the substrate side; said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction; said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

Abstract: A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being aranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction, said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

Abstract: An electrophotographic photoconductor is disclosed, which comprises a support material, an intermediate layer, a photosensitive layer and a surface protection layer for protecting the photosensitive layer, which are successively overlaid on the support material, and the photosensitive layer comprises an amorphous silicon carbon nitride containing at least hydrogen or halogen having the formula of a-Si:C:N(H.X), where X represents halogen, or an amorphous silicon carbon nitride of the formula of a-Si:C:N:O(H.X) (where X represents halogen) which contains at least hydrogen or halogen.

Abstract: An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photosensitivity and charge retaining ability at the surface layer, the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing carbon forming an insulating material as combined with the amorphous silicon, and the content of the carbon based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.