Inorganic Containing Patents (Class 430/65)
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Patent number: 4678731Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. Formed of microcrystalline silicon, the photoconductive layer is highly sensitive to long-wavelength light. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.Type: GrantFiled: June 23, 1986Date of Patent: July 7, 1987Assignee: Kabushiki Kaisha ToshibaInventors: Shuji Yoshizawa, Wataru Mitani, Mariko Yamamoto, Akira Sanjoh, Tatsuya Ikezue
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Patent number: 4675265Abstract: Electrophotographic light-sensitive elements according to the invention comprise(a) a conductive support;(b) a photoconductive layer; and(c) a surface protective layer.The conductive support is formed in a sheet-like or cylindrical shape from any suitable conductive material, and acts as an electrode of the light-sensitive element as well as acting as a physical support. The photoconductive layer comprises amorphous hydrogenated silicon having a high absorption efficiency and photoconductivity. The a--Si:H of a photoconductive layer may contain other elements such as fluorine, carbon, nitrogen and germanium, and may be doped with elements belonging to groups III and V of the periodic table. The surface protective layer is the outermost layer of an electrophotographic light-sensitive element according to the invention, and imparts resistance to environmental conditions. The surface protective layer comprises hydrogenated amorphous carbon, and may additionally contain silicon, nitrogen, oxygen or fluorine.Type: GrantFiled: March 25, 1986Date of Patent: June 23, 1987Assignee: Fuji Electric Co., Ltd.Inventors: Toyoki Kazama, Koichi Aizawa, Kiyoto Yamaguchi, Kenichi Hara, Toshiyuki Iijima
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Patent number: 4675264Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.Type: GrantFiled: July 15, 1986Date of Patent: June 23, 1987Assignees: Kyocera Corporation, Takao KawamuraInventors: Takao Kawamura, Hideaki Iwano, Naooki Miyamoto, Yasuo Nishiguchi
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Patent number: 4666808Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.Type: GrantFiled: March 28, 1984Date of Patent: May 19, 1987Assignee: Kyocera Corp.Inventors: Takao Kawamura, Hideaki Iwano, Naooki Miyamoto, Yasuo Nishiguchi
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Patent number: 4659639Abstract: A photosensitive member which comprises a photoconductive layer and an insulating layer located on the photoconductive layer, the photoconductive layer including amorphous silicon and the insulating layer including amorphous silicon, carbon, oxygen and fluorine. The photoconductive layer has a higher resistivity than the photosensitive member. A barrier layer may be located beneath the photoconductive layer, the barrier layer including either amorphous silicon, oxygen and a Group III impurity or amorphous silicon, carbon and oxygen.Type: GrantFiled: September 10, 1984Date of Patent: April 21, 1987Assignee: Minolta Camera Kabushiki KaishaInventors: Hiroshi Mizuno, Shuji Iino, Izumi Osawa, Isao Doi
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Patent number: 4657835Abstract: An electrophotographic photosensitive member having at least a substrate, a photosensitive layer, and an intermediate layer therebetween, characterized in that the intermediate layer is a hardened coating film formed from a liquid dispersion comprising(a) an electro-conductive powder and(b) a composition which contains either a resin or an oligomer and a crosslinking agent and is liquid at ordinary temperature in the absence of solvent.Type: GrantFiled: May 29, 1985Date of Patent: April 14, 1987Assignee: Canon Kabushiki KaishaInventor: Yuichi Yashiki
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Patent number: 4650736Abstract: A light receiving member comprises a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on a substrate, said photosensitive layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within a plane perpendicular to the layer thickness direction.Type: GrantFiled: February 8, 1985Date of Patent: March 17, 1987Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Masahiro Kanai, Tetsuo Sueda, Teruo Misumi, Yoshio Tsuezuki, Kyosuke Ogawa
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Patent number: 4624905Abstract: An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photoconductivity and charge retaining ability at the surface layer, in which the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing a substance forming an insulating material as combined with the amorphous silicon, and the content of the substance based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.Type: GrantFiled: August 13, 1984Date of Patent: November 25, 1986Assignee: Sanyo Electric Co., Ltd.Inventors: Hisao Haku, Kazuyuki Goto, Masayuki Tanaka, Takeo Fukatsu, Yukinori Kuwano
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Patent number: 4617246Abstract: A photoconductive member, which comprises a support for photoconductive member and a light receiving layer having a layer constitution comprising a first layer region comprising an amorphous material containing Ge.sub.x Si.sub.1-x (0.95<x.ltoreq.1) and a second layer region comprising silicon atoms exhibiting photoconductivity, two layer regions being provided successively from the support side.Type: GrantFiled: October 31, 1983Date of Patent: October 14, 1986Assignee: Canon Kabushiki KaishaInventors: Kozo Arao, Keishi Saitoh
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Patent number: 4609605Abstract: An electrophotographic imaging member is disclosed consisting essentially of a supporting substrate, a charge transport layer substantially free of arsenic and tellurium and consisting essentially of selenium and a halogen selected from the group consisting of from about 4 parts per million by weight to about 13 parts per million by weight of chlorine and from about 8 parts per million by weight to about 25 parts per million by weight of iodine and a photoconductive charge generator layer comprising selenium, from about 5 percent to about 20 percent by weight tellurium, from about 0.1 percent to about 4 percent by weight arsenic, and a halogen selected from the group consisting of up to about 70 parts per million by weight of chlorine and up to about 140 parts per million by weight of iodine, one surface of the charge generator layer being in operative electrical contact with the charge transport layer and the other surface of the charge generator layer being exposed to the ambient atmosphere.Type: GrantFiled: March 4, 1985Date of Patent: September 2, 1986Assignee: Xerox CorporationInventors: Barry A. Lees, Robert J. Flanagan, Monroe J. Hordon
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Patent number: 4599288Abstract: An electrophotographic plate-making material comprising a support with a volume resistance of 10.sup.10 .OMEGA. or less which support comprises at least one resin layer hardened by electron beam irradiation and a base paper, which support has a photoconductive layer on the resin layer.Type: GrantFiled: March 19, 1984Date of Patent: July 8, 1986Assignee: Fuji Photo Film Co., Ltd.Inventor: Tetsuro Fuchizawa
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Patent number: 4592979Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing nitrogen atoms and having a first layer region, a third layer region and a second layer region with the nitrogen atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side (with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum).Type: GrantFiled: September 6, 1984Date of Patent: June 3, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4582773Abstract: An improved electrophotographic photoreceptor includes a blocking layer formed from a doped, microcrystalline semiconductor alloy. The blocking layer is adapted to cooperate with the photoconductive layer of the photoreceptor to prevent the injection of undesirable charge carriers into the bulk of the photoconductive layer. Also disclosed are methods for the fabrication of the improved photoreceptor.Type: GrantFiled: May 2, 1985Date of Patent: April 15, 1986Assignee: Energy Conversion Devices, Inc.Inventors: Annette Johncock, Stephen J. Hudgens
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Patent number: 4582772Abstract: This invention is directed to an improved photoresponsive device comprised in the order stated of (1) a substrate, (2) a transmissive semi-conductive layer selected from the group consisting of indium-tin oxide, cadmium tin oxide, tin oxide, titanium oxides, titanium nitrides, titanium silicides, and mixtures thereof (3) a photogenerating layer comprised of an inorganic photoconductive composition or an organic photoconductive composition, dispersed in a resinous binder and (4) a charge carrier transport layer comprised of a combination of a resinous binder having dispersed therein small molecules of an electrically active material, the combination of which is substantially non-absorbing to visible light and allows the injection of photogenerating holes from the charge photogenerating layer in contact therewith, the electrically active material being of the following formula: ##STR1## wherein X is selected from the group consisting of ortho CH.sub.3, meta CH.sub.3, para CH.sub.Type: GrantFiled: February 15, 1983Date of Patent: April 15, 1986Assignee: Xerox CorporationInventors: Leon A. Teuscher, Ian D. Morrison
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Patent number: 4579801Abstract: An electrophotographic photosensitive member characterized by having a phenolic resin layer formed from a resol coat, between a substrate and a photosensitive layer.Type: GrantFiled: July 25, 1984Date of Patent: April 1, 1986Assignee: Canon Kabushiki KaishaInventor: Yuichi Yashiki
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Patent number: 4572882Abstract: A photoconductive member is provided which comprises a substrate and a photoconductive light receiving layer made up of an amorphous material containing silicon atoms and germanium atoms, the light receiving layer containing nitrogen atoms and having a first layer region (1), a third layer region (3), and a second layer region (2) of nitrogen atom distribution concentrations C(1), C(3), and C(2), respectively, in the thickness direction, in that order from the substrate side to the opposite side, wherein C(3) is higher than any of C(2) and C(1) and one of C(1) and C(2) is not zero.Type: GrantFiled: September 6, 1984Date of Patent: February 25, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4571371Abstract: An electrophotographic photosensitive member comprises a substrate and a photosensitive layer, and an electroconductive layer containing an electroconductive material, a binder and a leveling agent is provided between the substrate and the photosensitive layer. The silicone compound leveling agent improves the interfaces between the electroconductive layer and both the substrate and photosensitive layer.Type: GrantFiled: May 7, 1984Date of Patent: February 18, 1986Assignee: Canon Kabushiki KaishaInventor: Yuichi Yashiki
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Patent number: 4569891Abstract: A multi-layered photoconductive material which comprises first layers containing at least one VIb chalcogen element chosen from S, Se and Te and second layers containing at least one IIb element chosen from Zn, Cd and Hg and acting as electric potential barriers, said first layers and said second layers being alternatively arranged and the total number of said first layers and said second layers being not less than 5 and has a high response speed and an excellent sensitivity to long wavelength light with a great dark resistance.Type: GrantFiled: March 30, 1984Date of Patent: February 11, 1986Assignee: Kanegafuchi Chemical Industry Co., Ltd.Inventors: Isamu Shimizu, Minori Yamaguchi
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Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer
Patent number: 4567127Abstract: A photoconductive member is provided which comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the distribution of germanium atoms therein being nonuniform in the layer thickness direction, and carbon atoms being contained in the light receiving layer.Said photoconductive member can further comprise thereon another layer which comprises amorphous material containing silicon atoms as a matrix and at least one kind of atoms selected from the group of nitrogen atoms and oxygen atoms.Type: GrantFiled: September 5, 1984Date of Patent: January 28, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno -
Patent number: 4559288Abstract: An electrophotographic photoreceptor having on a conductive support an interlayer and a photoconductive photoreceptive layer in that order, with the interlayer containing at least one colloidal substance selected from colloidal silica and colloidal alumina, and an organic solvent soluble resin which is composed of(A) a polymer having an acid value of from 10 to 100 and containing repeating units represented by formula (I) and (II) ##STR1## wherein R.sub.1 represents H or CH.sub.3 ; R.sub.2 represents H, --CH.sub.3, --C.sub.2 H.sub.5, or a chloromethyl group; and n represents an integer of 1 to 10; ##STR2## wherein R.sub.3 represents H or --CH.sub.3 ; and (B) at least one polymer selected from a homopolymer and a plural copolymer having a glass transition point (Tg) of from -70.degree. to 20.degree. C., which can be utilized as a lithographic printing material having long press life.Type: GrantFiled: September 18, 1984Date of Patent: December 17, 1985Assignee: Fuji Photo Film Co., Ltd.Inventors: Sho Nakao, Kenji Kunichika, Chikashi Ohishi, Masato Iwai, Kiyoshi Iwamoto
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Patent number: 4557987Abstract: A photoconductive member having a support, amorphous charge generation and charge transport layers and a barrier layer between the support and the charge generation layer. The charge generation layer contains from 0.1 to 10 atomic percent of a conduction controlling impurity. Intermediate and surface barrier layers are also employed and additional transport layers are utilized.Type: GrantFiled: December 8, 1981Date of Patent: December 10, 1985Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
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Patent number: 4557993Abstract: A process for preparing an electrophotographic imaging member comprising providing a nickel substrate, heating the nickel substrate to a temperature of at least 260.degree. C. in the presence of oxygen until a continuous layer of nickel oxide forms on the substrate and depositing at least one photoconductive insulating layer on the continuous layer of nickel oxide.Type: GrantFiled: August 3, 1984Date of Patent: December 10, 1985Assignee: Xerox CorporationInventor: David J. Matyjakowski
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Patent number: 4552824Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.Type: GrantFiled: January 28, 1985Date of Patent: November 12, 1985Assignee: Canon Kabushiki KaishaInventors: Yutaka Hirai, Toshiyuki Komatsu, Katsumi Nakagawa, Teruo Misumi, Tadaji Fukuda
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Patent number: 4539283Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.Type: GrantFiled: December 29, 1981Date of Patent: September 3, 1985Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
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Patent number: 4532198Abstract: A photoconductive member is provided, which comprises a support for photoconductive member and a light receiving layer with a layer constitution, comprising a first layer region containing at least germanium atoms of which at least a portion is crystallized, a second region comprising an amorphous material containing at least silicon atoms and germanium atoms, a third layer region comprising an amorphous material containing at least silicon atoms and exhibiting photoconductivity, and a fourth layer region comprising an amorphous material containing silicon atoms and carbon atoms, provided successively in the order mentioned from the said support side.Type: GrantFiled: May 7, 1984Date of Patent: July 30, 1985Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Kozo Arao
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Patent number: 4526849Abstract: An amorphous silicon based photoconductive element for use in electrophotographic copying processes, which exhibits a suitably low dark discharge rate with other good photoelectric properties, is composed of an electrically conductive support having applied thereto, in sequence, a barrier layer consisting essentially of a doped hydrogen-containing amorphous silicon, an intermediate layer consisting essentially of substantially undoped hydrogen-containing amorphous silicon, an intermediate barrier layer consisting essentially of doped hydrogen-containing amorphous silicon and a main, charge receiving layer consisting essentially of substantially undoped hydrogen-containing amorphous silicon.Type: GrantFiled: October 17, 1983Date of Patent: July 2, 1985Assignee: Oce-Nederland B.V.Inventors: Gabriel N. M. M. van der Voort, Marinus Groeneveld
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Patent number: 4525442Abstract: A photoconductive member comprises a photoconductive layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of silicon atoms and an amorphous layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of boron atoms.Type: GrantFiled: July 16, 1984Date of Patent: June 25, 1985Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
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Patent number: 4522905Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer constituted of an amorphous material containing at least silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms and an amorphous layer exhibiting photoconductivity constituted of an amorphous material containing at least one of hydrogen atoms or halogen atoms as constituent atoms in a matrix of silicon atoms, said rectifying layer having a layer thickness t which from 30 .ANG. up to, but not reaching, 0.3.mu. and the content C(A) of the aforesaid atoms contained in the rectifying layer being 30 atomic ppm or more, or said t being 30 .ANG. or more and said C(A) being from 30 atomic ppm up to, but not reaching, 100 atomic ppm.Type: GrantFiled: February 1, 1983Date of Patent: June 11, 1985Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
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Patent number: 4518670Abstract: Disclosed is a multilayered electrophotographic recording material comprising a charge transfer layer and a charge generating layer on a substrate. The layers are comprised of essentially amorphous silicon. At least 1 atomic percent of nitrogen is present in the charge transfer layer.Type: GrantFiled: June 3, 1983Date of Patent: May 21, 1985Assignee: Konishiroku Photo Industry Co., Ltd.Inventors: Masatoshi Matsuzaki, Toshinori Yamazaki, Hiroyuki Nomori
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Patent number: 4518669Abstract: An electrophotographic photosensitive member provided with a novel intermediate layer between the substrate and the photosensitive layer. This intermediate layer is a resin layer in which an alumina- or tin oxide-treated titanium oxide powder is dispersed. The thickness of this intermediate layer is the second power or more of the maximum surface roughness of the substrate when the length is denoted in terms of a micron as a unit.Type: GrantFiled: October 31, 1983Date of Patent: May 21, 1985Assignee: Canon Kabushiki KaishaInventor: Yuichi Yashiki
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Patent number: 4513073Abstract: The present invention relates to a photoconductive element comprising a photoconductive layer and one or more blocking layers adjacent thereto and having space charge layers interposed between the photoconductive layer and the blocking layers to increase the voltage acceptance potential of the photoconductive element.Type: GrantFiled: August 18, 1983Date of Patent: April 23, 1985Assignee: Minnesota Mining and Manufacturing CompanyInventors: Frank R. Jeffrey, III, James R. Shirck
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Patent number: 4510224Abstract: A photoreceptor comprising a photoconductive layer composed of hydrogenated and/or fluorinated amorphous silicon, a surface modifying layer formed on the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide and a charge transport layer formed below the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide wherein the thickness "t" of the above surface modifying layer is selected in a range 400 .ANG..ltoreq.t<2,000 .ANG..Type: GrantFiled: May 3, 1983Date of Patent: April 9, 1985Assignee: Konishiroku Photo Industry Co., Ltd.Inventors: Toshinori Yamazaki, Hiroyuki Nomori, Masatoshi Matsuzaki, Tetsuo Shima, Isao Myokan
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Patent number: 4501807Abstract: A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as constituent atoms, oxygen atoms in a distribution which is nonuniform and continuous in the direction of the layer thickness and a second layer region containing, as constituent atoms, the atoms (A) belonging to group III or group V of the periodic table in a distribution which is continuous in the direction of the layer thickness, said second layer existing internally beneath the surface of said amorphous layer.Type: GrantFiled: March 8, 1983Date of Patent: February 26, 1985Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
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Patent number: 4490453Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing nitrogen atoms in at least a part thereof, the content of the nitrogen atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.Type: GrantFiled: December 29, 1981Date of Patent: December 25, 1984Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
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Patent number: 4489149Abstract: The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10.sup.-5 to 5.times.10.sup.-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.Type: GrantFiled: December 19, 1983Date of Patent: December 18, 1984Assignees: Minolta Camera Kabushiki Kaisha, Takao Kawamura, Kyocera CorporationInventors: Takao Kawamura, Masazumi Yoshida
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Patent number: 4486521Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent atom, the oxygen atom being distributed continuously in the direction of the layer thickness and enriched at the support side, and a second layer region containing an atom of the group III of the periodic table as a constituent atom, said first layer region being internally present at the support side in the amorphous layer, and the layer thickness T.sub.B of said second layer region and a layer thickness T resulted from subtracting T.sub.B from the layer thickness of the amorphous layer satisfying the relation, T.sub.B /T.ltoreq.1.Type: GrantFiled: March 14, 1983Date of Patent: December 4, 1984Assignee: Canon Kabushiki KaishaInventors: Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Shigeru Shirai
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Patent number: 4484809Abstract: Glow discharge method and apparatus useful for coating electrophotographic photoreceptors in the form of drums and plates are described. Improved photoreceptors using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are also described.Type: GrantFiled: July 17, 1981Date of Patent: November 27, 1984Assignee: Plasma Physics CorporationInventor: John H. Coleman
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Patent number: 4483911Abstract: A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from hydrogen atoms and halogen atoms as a constituent, the first layer region having a layer region (I) containing an impurity controlling the electroconductivity type at the support side, and the second layer region comprising an amorphous material comprising at least both silicon and carbon as constituents.Type: GrantFiled: December 17, 1982Date of Patent: November 20, 1984Assignee: Canon Kabushiki KaishaInventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato
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Patent number: 4464450Abstract: An electrostatographic imaging member having two electrically operative layers including a charge transport layer and a charge generating layer, the electrically operative layers overlying a siloxane film coated on a metal oxide layer of a metal conductive anode, said siloxane film comprising a reaction product of a hydrolyzed silane having the following general formula: ##STR1## wherein R.sub.1 is an alkylidene group containing 1 to 20 carbon atoms, and R.sub.2 and R.sub.3, are independently selected from the group consisting of H, a lower alkyl group containing 1 to 3 carbon atoms, a phenyl group, and a poly(ethylene-amino) group, said siloxane having reactive OH and ammonium groups attached to silicon atoms.Type: GrantFiled: September 21, 1982Date of Patent: August 7, 1984Assignee: Xerox CorporationInventor: Leon A. Teuscher
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Patent number: 4464451Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and an amorphous layer which is laid on said substrate and constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said substrate being constituted of aluminum oxide containing chemi-structurally water at least on the surface thereof, and said amorphous layer having a layer region containing at least one member selected from the group consisting of oxygen atom, nitrogen atom and carbon atom in at least a part thereof, the content of said member in said layer region being distributed unevenly in the direction of the thickness of said layer.Type: GrantFiled: January 29, 1982Date of Patent: August 7, 1984Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
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Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
Patent number: 4461820Abstract: An electrophotographic image-forming member comprises (1) a substrate for electrophotography which has a surface coating of an aluminum oxide containing water chemi-structurally and (2) a photoconductive layer which is laid on said surface coating of the substrate and constituted of an amorphous material containing at least one of hydrogen atom and halogen atom in a matrix of silicon atom, said photoconductive layer containing at least one of oyxgen atom, nitrogen atom, and carbon atom.Type: GrantFiled: February 1, 1982Date of Patent: July 24, 1984Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda -
Patent number: 4461819Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.Type: GrantFiled: June 3, 1981Date of Patent: July 24, 1984Assignee: Canon Kabushiki KaishaInventors: Katsumi Nakagawa, Toshiyuki Komatsu, Yutaka Hirai, Teruo Misumi, Tadaji Fukuda
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Patent number: 4457971Abstract: Lithographic printing substrates ordinarily require a mechanical or chemical graining of aluminum surfaces. Such substrates are difficult and expensive to make. It has been found that lithographically suitable substrates can be prepared by the firing of monobasic phosphate solutions with dispersed particles therein. The presence of reactive metallic oxides enhances the properties of the surface.Type: GrantFiled: August 26, 1982Date of Patent: July 3, 1984Assignee: Minnesota Mining and Manufacturing CompanyInventors: Donald E. Cadwell, Larry A. Brey
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Patent number: 4452874Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:Si.sub.a N.sub.1-a (0.57<a<1) (1)(Si.sub.b N.sub.1-b).sub.c H.sub.1-c (0.6<b<1, 0.65.ltoreq.c<1) (2)(Si.sub.d N.sub.1-d).sub.e (X, H).sub.1-e (0.6<d<1, 0.8.ltoreq.e<1) (3)(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms.Type: GrantFiled: February 1, 1983Date of Patent: June 5, 1984Assignee: Canon Kabushiki KaishaInventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
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Patent number: 4452875Abstract: A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas:Si.sub.a C.sub.1-a (0.4<a<1) . . . (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6 .ltoreq.c<1) . . . (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) . . . (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) . . .Type: GrantFiled: February 8, 1983Date of Patent: June 5, 1984Assignee: Canon Kabushiki KaishaInventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
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Patent number: 4443529Abstract: A photoconductive member comprising a support for photoconductive member, a photoconductive layer constituted of an amorphous material comprising silicon atom as a matrix and a barrier layer between said support and said photoconductive layer, said barrier layer having a double-layer structure of a first barrier layer constituted of an amorphous material comprising silicon atom as a matrix and containing impurities which control the property of conductivity and a second barrier layer constituted of an electrically insulating material different from said amorphous material constituting said first barrier layer.Type: GrantFiled: April 14, 1982Date of Patent: April 17, 1984Assignee: Canon Kabushiki KaishaInventors: Junichiro Kanbe, Shigeru Shirai, Tadaji Fukuda
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Patent number: 4442192Abstract: This invention relates to an improved layered overcoated photoresponsive imaging device useful in a xerographic imaging process employing a single charging step, which device is comprised in the order stated of (1) a conductive supporting substrate, (2) a photoconductive composition layer, (3) a hole trapping layer, and (4) an overcoating layer comprised of a composition capable of donating electrons to positive charges contained on the surface of the photoresponsive device.Type: GrantFiled: June 7, 1982Date of Patent: April 10, 1984Assignee: Xerox CorporationInventor: Damodar M. Pai
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Patent number: 4420546Abstract: An electrophotographic image forming member having on a substrate a photoconductive layer constructed by laminating a crystalline silicon layer and an amorphous silicon layer.Type: GrantFiled: August 20, 1981Date of Patent: December 13, 1983Assignee: Canon Kabushiki KaishaInventors: Junichiro Kanbe, Tadaji Fukuda
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Patent number: 4416962Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and a photoconductive layer which is laid on said substrate and constituted of an amorphous material containing at least one of hydrogen atom or halogen atom in a matrix of silicon atom, said substrate being constituted of aluminum oxide containing chemi-structually water at least on the surface thereof.Type: GrantFiled: December 7, 1981Date of Patent: November 22, 1983Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
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Patent number: 4415639Abstract: This invention is directed to an improved photoresponsive device comprised of a substrate, a hole blocking layer, an optional adhesive layer, an inorganic photogenerating layer, an organic photoconductive layer sensitive to infra-red radiation, and a top coating of a hole transport layer. More specifically, the present invention is directed to an improved photoresponsive device comprised in the order stated of the following layers: (1) a conductive substrate, (2) a metal oxide hole blocking layer, (3) an adhesive layer, (4) an inorganic photogenerating layer, (5) a photoconductive composition capable of enhancing or reducing the intrinsic properties of the photogenerating layer, which composition is selected from the group consisting of organic photoconductive compositions, charge transfer complex compositions, sensitizers, or mixtures thereof, and (6) a hole transport layer.Type: GrantFiled: September 7, 1982Date of Patent: November 15, 1983Assignee: Xerox CorporationInventor: Anthony M. Horgan