Abstract: Polymeric material, containing a latent acid which can be converted to an acid by irradiation by a laser and optionally further ingredients.

Abstract: A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: (x) an alkali-soluble group; (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and (z) a group that decomposes by action of an acid, wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

Abstract: The present invention provides a composition, which comprises a latent activator. It also provides a process for the preparation of these compositions, substrates coated with these compositions and a process for their preparation, a process for preparing marked substrates using these compositions and marked substrates obtainable by the latter process.

Abstract: A photosensitive resin composition comprising: (A) a binder polymer; (B) a photopolymerizable compound that has an ethylenically unsaturated bond; and (C1) a compound represented by general formula (1) below, wherein, at least one R represents a C1-10 alkoxy group or a C1-12 alkyl group; the sum of a, b, and c is 1 to 6; and when the sum of a, b, and c is 2 to 6, each R may be the same as or different from one another.

Abstract: Photoresist compositions include a blend of at least one fully protected calix[4]resorcinarene and at least one unprotected calix[4]resorcinarene, wherein the fully protected calix[4]resorcinarene has phenolic groups protected with acid labile protective groups; a photoacid generator; and a solvent, and wherein the blend and the photoacid generator are soluble in the solvent. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

Abstract: A fluorine-containing compound represented by a general formula (c-1) shown below: [Chemical Formula 1] RX-AN-(OR2)a??(c-1) [wherein, RX represents an organic group, AN represents a naphthalene ring that may have a substituent, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among AN and said a R2 groups contains a fluorine atom].

Abstract: A resist composition includes (A) a resin including: a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by formula (I), and a repeating unit represented by formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation: wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.

Abstract: A curable composition, including: a polymerizable compound (a) including an ethylenically unsaturated bond; a binder polymer (b); a radical polymerization initiator (c); and an alicyclic compound (d) including a urea bond is provided.

Abstract: An image-forming method includes: exposing a negative type image-forming material including a support and an image-recording layer containing a binder polymer containing at least one group capable of being converted to a sulfonate upon a reaction with an aqueous solution containing at least one of a sulfite and a bisulfite, a sensitizing dye, a polymerization initiator, and a compound having an ethylenically unsubstituted bond; and removing an unexposed area of the image-recording layer with an aqueous solution containing at least one of a sulfite and a bisulfite.

Abstract: The present invention provides a photosensitive resin composition comprising (a) an alkali-soluble resin, (b) a silicon compound having a secondary aromatic amino group and an alkoxy group, and (c) at least one selected from a photopolymerization initiator, a photo acid generator and a photo base generator. According to the present invention, it is possible to obtain a photosensitive resin composition which remarkably enhances the adhesion property with a substrate after curing without deteriorating storage stability of a solution, and does not cause peeling of a fine pattern even upon development.

Abstract: The present invention provides a chemically amplified positive resist composition comprising (A) a resin obtainable by reacting a novolak resin, a poly(hydroxystyrene) and a compound having at least two vinyl ether structures, and (B) an acid generator.

Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.

Abstract: To provide a fluorinated polymer which enables to reduce the amount of residual ink on partition walls and to form an ink layer having high uniformity in film thickness, and a negative photosensitive composition. A fluorinated polymer which is a copolymer made of at least two monomers each having an ethylenic double bond, and which has a side chain having a C20 or lower alkyl group in which at least one of its hydrogen atoms is substituted by a fluorine atom (provided that the alkyl group may contain an etheric oxygen atom between carbon atoms) and a side chain having at least two ethylenic double bonds per side chain.

Abstract: A positive resist composition for immersion exposure including a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a cyclic principal chain polymer (A1) and a non-cyclic principal chain polymer (A2) having a structural unit (a) derived from acrylic acid as a principal chain, and the non-cyclic principal chain polymer (A2) having a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group (p1) represented by general formula (p1) shown below: wherein R1? and R2? each independently represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms; n represents an integer of 0 to 3; and Y represents an alkyl group of 1 to 5 carbon atoms or an aliphatic cyclic group of 5 to 16 carbon atoms.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: Compounds represented by the following structural formulas can be used as photoacid generators: Such compounds are useful, for example, in fabricating arrays of polymers.

Abstract: There are provided a compound represented by a general formula (b1-1) shown below suitable as an acid generator for a resist composition, a compound represented by a general formula (I) shown below suitable as a precursor for the compound represented by the general formula (b1-1), an acid generator, a resist composition, and a method of forming a resist pattern. [Chemical Formula 1] X—Q1—Y1—SO3?M+??(I) X—Q1—Y1—SO3?A+??(b1-1) (wherein, Q1 represents a bivalent linking group or a single bond; Y1 represents an alkylene group which may contain a substituent group or a fluorinated alkylene group which may contain a substituent group; X represents an aromatic cyclic group of 5 to 30 carbon atoms which contains a fluorine atom and may contain a substituent group; M+ represents an alkali metal ion; and A+ represents an organic cation.).

Abstract: Provided is a positive resist composition using a resin having, in the polymer main chain, a specific acid decomposable structure and further having, in the side chain thereof, several specific acid decomposable groups, satisfactory in an exposure latitude, a focus latitude, and pattern collapse prevention at a high level, and having reduced development defects; and a pattern forming method.

Abstract: Polymers for use in photoresist compositions include a repeat unit having a formula of: wherein Z represents a repeat unit of a polymer backbone; X is a linking group selected from the group consisting of alkylene, arylene, araalkylene, carbonyl, carboxyl, carboxyalkylene, oxy, oxyalkylene, and combinations thereof, and R is selected from the group consisting of hydrogen, alkyl, aryl, and cycloalkyl groups with the proviso that X and R are not part of the same ring system. Also disclosed are processes for patterning a relief image of the photoresist composition, wherein the photoresist composition has an outgassing rate of less than 6.5E+14 molecules/cm2/s.

Abstract: A positive resist composition for immersion exposure comprising: (A) a resin having an alicyclic hydrocarbon structure, wherein the resin is capable of increasing a solubility of the resin (A) in an alkaline developer by an action of an acid; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and radiation, wherein the resin (A) includes a component having a molecular weight of 1,000 or less in an area ration of 20% or less to an entire area in a pattern area by gel permeation chromatography, and a pattern-forming method using the same.

Abstract: A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.

Abstract: The present invention relates to a novel (meth)acrylamide compound represented by the general formula (1), a (co)polymer of the (meth)acrylamide compound, and a chemically amplified photosensitive resin composition composed of the polymer and a photoacid generator. In the formula, R1 represents a hydrogen atom or a methyl group; R2 represents an acid-decomposable group; and R3 to R6 independently represent a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms.

Abstract: An imaging medium comprises a substrate and an imaging composition disposed on the substrate. The imaging composition comprises a matrix, a thermochromic compound dispersed or dissolved in the matrix; and at least two photoinitiators dispersed or dissolved in the matrix.

Abstract: A compound represented by formula (I); and a compound represented by formula (b1-1): wherein X represents —O—, —S—, —O—R3— or —S—R4—, wherein each of R3 and R4 independently represents an alkylene group of 1 to 5 carbon atoms; R2 represents an alkyl group of 1 to 6 carbon atoms, an alkoxy group of 1 to 6 carbon atoms, a halogenated alkyl group of 1 to 6 carbon atoms, a halogen atom, a hydroxyalkyl group of 1 to 6 carbon atoms, a hydroxyl group or a cyano group; a represents an integer of 0 to 2; Q1 represents an alkylene group of 1 to 12 carbon atoms or a single bond; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group; M+ represents an alkali metal ion; and A+ represents an organic cation.

Abstract: The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process. The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).

Abstract: A coating material including a low-molecular or medium-molecular organic compound represented by general formula (1). (In the formula, R1 is a single bond, methylene, ethylene or oxygen; and R2 is a hydrogen atom, or a hydrocarbon group, a fluorine-containing alkyl group, a cyclic form containing an aromatic group or aliphatic group, which may contain hydroxy group, carboxyl group, amino group, amide group, imide group, glycidyl group, cyano group, fluorocarbinol group, sulfonic group or sulfonylamide group, and a complex thereof, and may contain a fluorine atom, oxygen atom, nitrogen atom, silicon atom or sulfur atom, and R2's of the same type or different type may be connected by an ester bond, amide bond, ether bond, thioether bond, thioester bond or urethane bond.). This compound can be derived from a diol compound and bicyclo[2.2.2]octane-2,3:5,6-tetracarboxylic anhydride.

Abstract: Sulfonate salts have the formula: CF3—CH(OCOR)—CF2SO3?M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

Abstract: A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

Abstract: A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

Abstract: A positive resist composition including a resin component (A) and an acid-generator component (B), the resin component (A) including a structural unit (a1) derived from hydroxystyrene, and a structural unit (a2) having an acetal-type acid dissociable dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1-i) having at least one anion moiety selected from the group consisting of anion moieties represented by general formula (b-3), (b-4), and (b-5), an acid generator (B1-ii) having an anion moiety represented by general formula (b-6) shown below, or an acid generator (B1-iii) having a cation moiety represented by general formula (b?-3) shown below: wherein X? represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; Y? and Z?, U?, V?, and W? each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom, [Chem

Abstract: A resist composition for immersion exposure including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon irradiation, and a fluorine-containing compound (C) having a group represented by general formula (c) shown below and containing at least one fluorine atom: wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R1 represents a hydrocarbon group of 2 or more carbon atoms which may have a fluorine atom.

Abstract: To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.

Abstract: A positive resist composition for a thin-film implantation process of the present invention includes: a resin component (A) with an acid-dissociable dissolution inhibiting group, whose alkali solubility increases by the action of an acid; an acid generator component (B) which generates an acid by irradiation with radiation; and a compound (C) having a radiation absorbing ability, wherein said resin component (A) comprises a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) obtained by substituting the hydrogen atom in a hydroxyl group of said structural unit (a1) with an acid-dissociable dissolution inhibiting group, and said acid-dissociable dissolution inhibiting group contains an acid-dissociable dissolution inhibiting group (II) represented by the following general formula (II) as a main component.

Abstract: In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.

Abstract: The present invention relates to thermoplastic material comprising polymer and at least one polychromic substance, wherein the polychromic substance is a functionalised diacetylene having the formula which has the general structure: X—C?C—C?C—Y—(CO)n-QZ wherein X is H or alkyl, Y is a divalent alkylene group, Q is O, S or NR, R is H or alkyl, and Z is alkyl, and n is 0 or 1. The present invention further relates to a method of processing thermoplastic material to form a plastic article, wherein the method comprises the step of processing the thermoplastic material at a temperature greater than the melt temperature of the thermoplastic, wherein the thermoplastic material comprises polymer and at least one polychromic substance as defined above; and further comprising the step of irradiating the plastic article to colour at least a region of the plastic article.

Abstract: A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): wherein R7 represents a hydrogen atom etc., R8 represents a C1-C4 alkyl group, p represents an integer of 1 to 3, and q represents an integer of 0 to 2, (ii) at least one polymerization unit selected from a group consisting of a polymerization unit represented by the formula (II): wherein R1 represents a hydrogen atom etc., R2 represents a C1-C8 alkyl group and ring X represents an alicyclic hydrocarbon group, and a polymerization unit represented by the formula (IV): wherein R3 represents a hydrogen atom etc., R4 and R5 independently represents a hydrogen atom etc., R10 represents a C1-C6 alkyl group etc., and (iii) a polymerization unit represented by the formula (III): wherein R3, R4 and R5 are the same as defined above, E represents a divalent hydrocarbon group, G represents a single bond etc., Z represents a carbonyl group etc.

Abstract: Provided are compositions derived from a polycarboxylic acid, a copper phthalocyanine complex, and a plasticizer. The compositions can be used to prepare color filter films that exhibit lower lip heights, suitable in color filter elements, for example, in liquid crystal display devices.

Abstract: The present invention provides a polymer, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance, suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition; a positive resist composition using the polymer; and a patterning process. The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).

Abstract: Disclosed is a photosensitive paste comprising a polymerizable monomer and a photopolymerization initiator, wherein the glass transition temperature of the polymerizable monomer is ?10° C. or less. The present paste may be used for creating a fine pattern and prevents residue from remaining in the area where paste should be removed.

Abstract: Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 ?m?1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.

Abstract: The present invention provides a planographic printing plate precursor including on a support a photosensitive layer that contains a polymerizable composition containing a specific binder polymer having a repeating unit of formula (I), an infrared absorbent, a polymerization initiator and a polymerizable compound, wherein R1 represents a hydrogen atom or a methyl group; R2 represents a linking group which includes two or more atoms selected from a carbon atom, a hydrogen atom, an oxygen atom, a nitrogen atom and a sulfur atom and has a number of atoms of 2 to 82; A represents an oxygen atom or —NR3— in which R3 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms; and n represents an integer of 1 to 5. The invention also provides a planographic printing plate precursor provided with a specific photosensitive layer with respect to an alkaline developer.

Abstract: An image-forming method applying a heat-sensitive transfer system which uses a heat-sensitive transfer image-receiving sheet and a heat-sensitive transfer sheet, in which the heat-sensitive transfer image-receiving sheet has a support, at least one dye receptor layer on the support, and at least one heat insulation layer containing both hollow polymer particles and a hydrophilic polymer that is disposed between the dye receptor layer and the support; and the heat-sensitive transfer sheet has at least one yellow heat transfer layer, at least one magenta heat transfer layer, and/or at least one cyan heat transfer layer on a support: comprising controlling each glass transition point (Tg-A) of three heat transfer layers so that they decrease in area order; and comprising transferring at least three kinds of heat transfer dyes contained in the heat transfer layers to the dye receptor layer in order.

Abstract: A resist composition and a method of forming a resist pattern that enable contamination within the exposure apparatus to be prevented in lithography processes using an electron beam or EUV (extreme ultraviolet light). In this method, an organic solvent containing, as the principal component, one or more compounds selected from a group consisting of propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc), and 3-methyl methoxy propionate (MMP) is used as the resist solvent.

Abstract: Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Abstract: A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1? and R2? each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).

Abstract: A positive photosensitive composition comprises: (A) 5 to 20 parts by weight of the total amount of at least one compound that generates an acid upon irradiation with an actinic ray; and (B) 100 parts by weight of the total amount of at least one fluorine atom-containing resin having a group that increases a solubility of the resin in an alkaline developer by the action of an acid.

Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

Abstract: Compounds represented by the following structural formulas can be used as photoacid generators: Such compounds are useful, for example, in fabricating arrays of polymers.

Abstract: A photosensitive resin realizes formation of a pattern having a good shape, without introducing poor compatibility between an acid generator and a photoresist primary-component polymer having an acid-dissociable group, and a photosensitive composition containing the photosensitive resin. The photosensitive resin includes a repeating unit represented by formula (1): (wherein R1 represents a C2-C9 linear or branched divalent hydrocarbon group; each of R2 to R5 represents a hydrogen atom or a C1-C3 linear or branched hydrocarbon group; each of R6 and R7 represents an organic group, wherein R6 and R7 may together form a divalent organic group; and X?represents an anion); at least one of a repeating unit represented by formula (2): (wherein R8 represents a C2-C9 linear or branched hydrocarbon group) and a repeating unit represented by formula (3): a repeating unit represented by formula (4): optionally, a repeating unit represented by formula (5).

Abstract: Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.