Abstract: The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

Abstract: The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Abstract: Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1?) containing an acid dissociable, dissolution inhibiting group within the structure thereof and including a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and A? represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom) and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group; or a polymeric compound (A1) including the structural unit (a0) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.

Abstract: The present invention relates to a photosensitive resin composition that includes a polymer prepared by using a macromonomer as an alkali soluble resin. The photosensitive resin composition is used for various types of purposes such as a photoresist for preparing a color filter, an overcoat photoresist, a column spacer, and an insulating material having a light blocking property, and improves physical properties such as residue or not, chemical resistance, and heat resistance of the photoresist.

Abstract: According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.

Abstract: Disclosed is a photosensitive ink which can form a coated film that is excellent in insulation properties, heat resistance, low warping, low elasticity and adhesion with the substrate, when used as an ink for screen printing, and with which clogging of the screen, bleeding, blur, chipping and the like are unlikely to occur even when the screen printing is repeatedly carried out, so that which has an excellent ease of handling in printing. The ink composition comprises 100 parts by weight of an organic solvent-soluble polyimide block copolymer(s), and 1 to 100 parts by weight of a photoacid generator(s). The polyimide block copolymer(s) and the photoacid generator(s) are dissolved in an organic solvent. The polyimide block copolymer(s) contain(s) in its molecular skeleton a diamine having a siloxane bond, and an aromatic diamine having a hydroxyl group(s) and/or carboxyl group(s) at ortho-position with respect to an amino group.

Abstract: A positive photosensitive composition includes: (A) a resin that has an acid decomposable repeating unit of formula (I) and increases its solubility in an alkali developer by action of an acid; (B) a compound that generates an acid upon irradiation; (C) a resin that has: a fluorine atom and/or a silicon atom; and a group selected from groups (x) to (z); and (D) a solvent: (x) an alkali soluble group, (y) a group which decomposes by action of an alkali developer and increases a solubility of the resin (C) in an alkali developer, and (z) a group which decomposes by action of an acid, wherein, Xa1 represents hydrogen, alkyl, cyano or halogen, Ry1 to Ry3 each independently represents alkyl or cycloalkyl, and at least two of Ry1 to Ry3 may be coupled to form a ring, and Z represents a divalent linking group.

Abstract: Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 ?m?1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid, and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) having an aromatic group, a structural unit (a5) represented by general formula (a5-1) shown below, and a structural unit (a1) containing an acid-dissociable, dissolution-inhibiting group. In the formula (a5-1), R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof.

Abstract: A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.

Abstract: The present invention provides a photoresist composition comprising: at least one selected from the group consisting of a monomer represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, W1 represents a C3-C20 divalent saturated cyclic hydrocarbon group, A1 represents a single bond or *-O—CO—W1— wherein * represents a binding position to W1?N— and W1 represents a C1-C10 divalent saturated hydrocarbon group, a polymer consisting of a structural unit derived from the monomer represented by the formula (I) and a polymer consisting of a structural unit derived from the monomer represented by the formula (I) and a structural unit derived from a monomer represented by the formula (II): wherein R3 represents a hydrogen atom or a methyl group, A2 represents a single bond or *-O—CO—(CH2)n— wherein * represents a binding position to R4—, n represents an integer of 1 to 7 and R4 represents a C3-C20 saturated cyclic hydrocarbon group, a resin having an acid-labile group

Abstract: A colored curable composition including: (A) a pigment dispersion containing (a-1) a pigment, (a-2) a compound having a pigment mother nucleus structure and an amino group in a molecule, and (a-3) a resin having an acid group and a polymerizable group; (B) an oxime ester initiator; and (C) a polymerizable compound.

Abstract: A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.

Abstract: To provide a photosensitive resin composition in which a hardened film obtained from the photosensitive resin composition has properties comparable to those of a film hardened at a high temperature, a method for manufacturing a patterned hardened film using the photosensitive resin composition, and an electronic part. The photosensitive resin composition includes (a) a polybenzoxazole precursor having a repeating unit represented by a general formula (I): wherein U and V represent a divalent organic group, and at least one of U and V is a group containing an aliphatic chain structure having 1 to 30 carbon atoms; (b) a photosensitizer; (c) a solvent; and (d) a crosslinking agent capable of causing crosslinking or polymerization by heating.

Abstract: A positive resist composition including a base component (A?) which exhibits increased solubility in an alkali developing solution under action of acid and generates acid upon exposure, the base component (A?) including a polymeric compound (A1?) having a structural unit (a5-1) represented by general formula (a5-1), a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) that generates acid upon exposure, the structural unit (a0-2) containing a group represented by general formula (a0-2?) (wherein X? represents an anion moiety represented by one of general formulas (1) to (5)).

Abstract: There is provided a positive type resist composition comprising (A) a resin component with only units derived from an acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent component, wherein the resin component (A) is a copolymer comprising (a1) a structural unit derived from an acrylate ester comprising, as an acid dissociable dissolution inhibiting group on a side chain, a polycyclic dissolution inhibiting group which is eliminated more easily than a 2-methyl-2-adamantyl group, (a2) a structural unit derived from an acrylate ester comprising a lactone containing polycyclic group on a side chain, and (a3) a structural unit derived from an acrylate ester comprising a hydroxyl group containing polycyclic group on a side chain; as well as a resist pattern formation method using such a composition.

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: Exemplary embodiments provide compositions and methods for an erasable medium that can include a photochromic composite containing a photochromic polymer dispersed in a polymer binder, a similar type polymer of a backbone portion of the photochromic polymer.

Abstract: A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided. The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or CF2CF3, A is a divalent hydrocarbon group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. Recurring units containing an aromatic ring structure are present in an amount ?60 mol % and the recurring units having formula (1) are present in an amount <5 mol %.

Abstract: Disclosed are a photoacid generator, a copolymer, a chemically amplified resist composition, and a method of forming a pattern using the chemically amplified resist composition. The photoacid is connected with a main chain of the copolymer, whereby the photoacid is equally dispersed within a resist layer, and characteristics of line edge roughness of a resist pattern is improved.

Abstract: A salt represented by the formula (I-BB): wherein Q1 and Q2 each independently represent a fluorine atom etc., X1 represents a single bond etc., Y1 represents a C1-C36 aliphatic hydrocarbon group etc., A1 and A2 independently each represents a C1-C20 aliphatic hydrocarbon group etc., Ar1 represents a (m4+1)-valent C6-C20 aromatic hydrocarbon group which can have one or more substituents, B1 represents a single bond etc., B2 represents a C4-C36 alicyclic hydrocarbon group which has one or more —OXa groups and which is not capable of being eliminated by the action of an acid etc., and Xa represents a hydrogen atom or a group capable of being eliminated by the action of an acid, m1 and m2 independently each represents an integer of 0 to 2, m3 represents an integer of 1 to 3, with the proviso that m1 plus m2 plus m3 equals 3, and m4 represents an integer of 1 to 3.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: A radiation-sensitive composition and method for using the composition to reduce the probability of pattern collapse is provided. The radiation-sensitive composition includes a bulk matrix of radiation-sensitive material with a base-reactive, surface-modifying agent dispersed throughout the matrix. The base-reactive, surface-modifying agent is reactive to hydroxide and increases the surface hydrophobicity of a pattern formed in a layer of the radiation-sensitive composition upon treatment with a basic developing solution during lithographic processing of a substrate.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method.

Abstract: The present invention refers to new organic molecules, derived from the class of polycarbocycle derivatives, and their application as components of photoresists, and in particular as components of photoresist compositions where no polymer is comprised as one of the photoresists components. In these photoresist formulations the new molecule(s) is/are the main component(s) (i.e. percentage higher than 50% w/w).

Abstract: To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.

Abstract: A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.

Abstract: A polymer comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, X represents a linear or branched chain C1-C6 alkylene group, Z represents a group represented by the formula (Ia): wherein R2 is independently in each occurrence a linear or branched chain C1-C6 alkyl group and m represents an integer of 0 to 15, and a structural unit represented by the formula (II): wherein R3 represents a hydrogen atom or a methyl group, R4 is independently in each occurrence a linear or branched chain C1-C6 alkyl group and n represents an integer of 0 to 4.

Abstract: There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: R2—CH2—O—Y1—SO3?A+??(b1-12) wherein R2 represents a monovalent aromatic organic group; Y1 represents an alkylene group of 1 to 4 carbon atoms which may be fluorinated; and A+ represents a cation.

Abstract: A polymer having a rate of dissolution in an alkaline developer that increases under the action of acid is provided. The polymer is prepared by reacting a hydrogenated ROMP polymer with an O-alkylating agent in the presence of a base.

Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.

Abstract: The present invention relates to thermoplastic material comprising polymer and at least one polychromic substance, wherein the polychromic substance is a functionalised diacetylene having the formula which has the general structure: X—C?C—C?C—Y—(CO)n-QZ wherein X is H or alkyl, Y is a divalent alkylene group, Q is O, S or NR, R is H or alkyl, and Z is alkyl, and n is 0 or 1. The present invention further relates to a method of processing thermoplastic material to form a plastic article, wherein the method comprises the step of processing the thermoplastic material at a temperature greater than the melt temperature of the thermoplastic, wherein the thermoplastic material comprises polymer and at least one polychromic substance as defined above; and further comprising the step of irradiating the plastic article to color at least a region of the plastic article.

Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.

Abstract: A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.

Abstract: It is intended to provide a radiation-sensitive resin composition, which comprises a radiation-sensitive acid generator excellent in resolution performance, heat stability, and storage stability, suppresses fluctuations in line width and deterioration in pattern profile attributed to standing waves, and produces a resist pattern improved in nano edge roughness and LEF. The radiation-sensitive resin composition is characterized by (A) a radiation-sensitive acid generator comprising: a sulfonium salt compound typified by 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate, or the like; and a sulfonimide compound. It is preferred that the composition should further comprise (B) a resin typified by a 4-hydroxystyrene/4-t-butoxystyrene copolymer, a 4-hydroxystyrene/t-butyl (meth)acrylate, or the like.

Abstract: A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.

Abstract: The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.

Abstract: A photosensitive resin composition comprising: (A) a binder polymer; (B) a photopolymerizable compound that has an ethylenically unsaturated bond; and (C1) a compound represented by general formula (1) below, wherein, at least one R represents a C1-10 alkoxy group or a C1-12 alkyl group; the sum of a, b, and c is 1 to 6; and when the sum of a, b, and c is 2 to 6, each R may be the same as or different from one another.

Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: A photosensitive resin composition comprising: (A) a binder polymer; (B) a photopolymerizable compound that has an ethylenically unsaturated bond; and (C1) a compound represented by general formula (1) below, wherein, at least one R represents a C1-10 alkoxy group or a C1-12 alkyl group; the sum of a, b, and c is 1 to 6; and when the sum of a, b, and c is 2 to 6, each R may be the same as or different from one another.

Abstract: A polymer includes a repeating unit (a-1) shown by a following formula (a-1), a repeating unit (a-2) shown by a following formula (a-2), and a GPC weight average molecular weight of about 1000 to about 100,000, wherein R0 represents an alkyl group having 1 to 5 carbon atoms in which at least one hydrogen atom is substituted by a hydroxyl group, and R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents an alkyl group having 1 to 4 carbon atoms, and R3 represents an alkyl group having 1 to 4 carbon atoms, a substituted or unsubstituted monovalent cyclic hydrocarbon group having 4 to 20 carbon atoms, or a divalent cyclic hydrocarbon group having 4 to 20 carbon atoms formed by R3 and R3 bonding to each other together with a carbon atom.

Abstract: The present invention provides coating compositions comprising (i) a) a compound containing a free carbonyl group and b) a nucleophile or (ii) a compound containing a free carbonyl group, which compound is substituted with one or more nucleophilic groups. The present invention also provides a process for the preparation of these compositions, substrates coated with these compositions and a process for their preparation, a process for preparing marked substrates using these compositions, and marked substrates obtainable by the latter process.

Abstract: A resist composition comprising: (A) a resin comprising a structural unit having an acid-labile group in its side chain and a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, Z1 represents a single bond or —(CH2)k—CO—O—, k represents an integer of 1 to 4, and ring X represents an unsubstituted or substituted C3-C30 cyclic hydrocarbon group having —COO—, (B) a resin comprising a structural unit having an acid-labile group in its side chain and a structural unit represented by the formula (III): wherein R6 represents a hydrogen atom or a methyl group, R7 is independently in each occurrence a linear or branched chain C1-C6 alkyl group and n represents an integer of 0 to 4, and (C) an acid generator.

Abstract: A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

Abstract: The present invention relates to a photoactive compound of a novel structure represented by Chemical Formula 1 below In Chemical Formula 1, R1 and R2, R3, and A are as defined in the specification, and a photosensitive resin composition comprising the same. The photoactive compound of the present invention comprises a nitro group and a phosphonate structure and thus exhibits excellent sensitivity through efficient absorption for UV light, excellent compatibility between the photoactive compound and the alkali-soluble binder resin, and an improved solubility of the photosensitive resin composition. Furthermore, the photosensitive resin composition of the present invention has excellent residual film thickness and mechanical strength characteristics and heat-resistant, chemical-resistant, and development-resistant properties.

Abstract: The present invention relates to a photosensitive composition, which is capable of being irradiated with high energy beam having a wave length of 1 to 300 nm band. The photosensitive composition includes a binder resin; and a photoelectron absorbent, capable of being excited with photoelectron emitted from the binder resin that absorbs the high energy beam, when the binder resin is irradiated with the high energy beam.