Abstract: A method of fabricating a semiconductor device according to one embodiment includes preparing a wafer having a plurality of chip areas, each chip area to become semiconductor chip, bonding the first side of the wafer to a support substrate through a removable adhesive, dividing the wafer into individually separate semiconductor chips, applying adhesive tape to the second side of the separate semiconductor chips, the second side being opposite to the first side bonded to the support substrate, and the adhesive tape being softer than the support substrate, removing the support substrate from the semiconductor chips, and picking up the separate semiconductor chips that are on the adhesive tape.

Abstract: A method for fabricating a chip-scale board-on-chip substrate, or redistribution element, includes forming conductive planes on opposite sides of a substrate. A first of the conductive planes includes two sets of bond fingers, conductive traces that extend from a first set of the bond fingers, and two sets of redistributed bond pads, including a first set to which the conductive traces lead. The second conductive plane includes conductive traces that extend from locations that are opposite from the second set of bond fingers toward locations that are opposite from the locations of the second set of redistributed bond pads. Conductive vias are formed through the second set of bond fingers to the conductive traces of the second conductive plane. In addition, conductive vias are also formed to electrically connect the conductive vias of the second conductive plane to their corresponding redistributed bond pads in the first conductive plane.

Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods include attaching a patch structure to an interposer by thermal compression bonding, forming an underfill around an array of interconnect structures disposed on a top surface of the interposer, curing the underfill, and then attaching a die to the patch structure.

Abstract: A semiconductor wafer processing tape sticking apparatus is provided and is capable of sticking a semiconductor wafer processing tape to a semiconductor wafer under the optimum conditions based on the processing data that has been written to a data carrier member and that has been read from the data carrier member without accessing the host computer unlike a conventional method. The semiconductor wafer processing tape sticking apparatus includes: a feeding apparatus provided with a feeding shaft to which a semiconductor wafer processing tape winding body can be detachably attached; a tape data read/write device for reading and writing the processing data that has been written to a data carrier member of the semiconductor wafer processing tape winding body; and a tape sticking apparatus for sticking a semiconductor wafer processing tape that has been fed out from the feeding apparatus to the semiconductor wafer based on the processing data that has been read by the tape data read/write device.

Abstract: An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween, and a spacer 23 arranged between the support substrate 12 and the sealing substrate 17. The electric circuit 14 includes an electronic element 24 having an organic layer. The sealing member 16 and the spacer 23 are formed using the same material.

Abstract: A manufacturing method of semiconductor package structure includes: providing a first dielectric layer having multiple through holes; providing a second dielectric layer having multiple conductive vias and a chip-containing opening; laminating the second dielectric layer onto the first dielectric layer; disposing a chip in the chip-containing opening and adhering a rear surface of the chip onto the first dielectric layer exposed by the chip-containing opening; forming a redistribution circuit layer on the second dielectric layer wherein a part of the redistribution circuit layer extends from the second dielectric layer onto an active surface of the chip and the conductive vias so that the chip electrically connects the conductive vias through the partial redistribution circuit layer; forming multiple solder balls on the first dielectric layer wherein the solder balls are in the through holes and electrically connect the chip through the conductive vias and the redistribution circuit layer.

Abstract: This disclosure provides systems, methods and apparatus for glass packaging of integrated circuit (IC) and electromechanical systems (EMS) devices. In one aspect, fabricating a glass package includes joining a cover glass panel to a glass substrate panel, and singulating the joined panels to form individual glass packages, each including one or more encapsulated devices and one or more signal transmission pathways. In another aspect, a glass package may include a glass substrate, a cover glass and one or more devices encapsulated between the glass substrate and the cover glass.

Abstract: A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are coupled to a lead frame that is subsequently embedded in an encapsulated semiconductor device package. The free end of signal conduits is exposed while the other end remains coupled to a lead frame. The signal conduits are then used as through package vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package and the leads.

Abstract: A semiconductor package including a package substrate having a chip mounting region and a peripheral region and including a ground layer formed in the peripheral region, first solder balls on the package substrate in the chip mounting region, second solder balls on the ground layer, at least one semiconductor chip stacked on the package substrate in the chip mounting region, and a package cap covering the semiconductor chip and contacting the package substrate in the peripheral region may be provided. The package cap is electrically connected to the second solder balls. Methods of fabricating the semiconductor package are also provided.

Abstract: A stacking carrier and a stacking method are provided. The stacking method is used between a wafer and a stacking carrier having the same shape. The stacking method includes the following steps. Firstly, an adhesive layer is coated on a surface of the carrier. Then, the adhesive layer corresponding to an edge of the carrier is partially removed, thereby defining at least one adhesive layer indentation. Afterwards, the wafer is stacked on the carrier through the adhesive layer having the adhesive layer indentation.

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a carrier material, attaching a die in the cavity, wherein a backside of the die comprises a metal filled DBF, forming a dielectric material adjacent the die and on a bottom side of the carrier material, forming a coreless substrate by building up layers on the dielectric material, and removing the carrier material from the coreless substrate.

Abstract: A method of attaching a die to a carrier using a temporary attach material is disclosed. The method comprises attaching the temporary attach material between a surface of the die and a surface of the carrier. The temporary attach material attaches the die to the carrier. The method comprises bonding at least one connector to the die and the carrier. The connector includes a first end bonded to the carrier and a second end bonded to the die. The method further comprises encapsulating at least a portion of the die and at least a portion of the at least one connector by an encapsulation material.

Abstract: A chip package includes a substrate, a pad, a double-sided adhesive tape, a chip, and a sealing member. The pad is arranged on the substrate and has a top surface facing away from the substrate. The double-sided adhesive tape includes a first paste surface and an opposing second paste surface. The first paste surface is attached to the top surface. The chip is attached onto the second paste surface and includes a light emitting surface or a light receiving surface facing away from the second paste surface. The sealing member is formed on the pad and tightly surrounds the chip and the double-sided adhesive.

Abstract: Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).

Abstract: Methods are provided for fabricating integrated circuit systems that include forming integrated circuits in and on a semiconductor substrate. Via holes are etched into a front surface of the semiconductor substrate and are filled with a conductive material. A carrier wafer having a layer of adhesive thereon is provided and an imprinted pattern is formed in the layer of adhesive. The front surface of the semiconductor substrate is bonded to the carrier wafer with the patterned layer of adhesive. A portion of a back surface of the semiconductor substrate is removed to expose a portion of the conductive material and the thinned back surface is attached to a second substrate. The semiconductor substrate is then de-bonded from the carrier wafer.

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

Abstract: A semiconductor package is provided with a functionally necessary minimum number of components with which stress concentrated on specific solder bumps is reduced and ruptures of the bumps are prevented even when stress caused by physical bending or a difference in thermal expansion coefficient is applied to the package. The semiconductor package includes a tabular die and bonding pads arranged on a mounting surface of the die. A passivation layer and a protective film are provided on the mounting surface such that central areas of the bonding pads are open. Under-bump metals (UBMs) connected to the bonding pads are provided in the openings, and solder bumps are provided on the surfaces of the UBMs. The diameter of the UBMs provided at corners of the die is less than that of the UBM provided at the approximate center of the die so that the elastic modulus of the UBMs provided at the corners is small.

Abstract: The adhesive composition of the invention comprises (A) a thermoplastic resin with a Tg of no higher than 100° C. and (B) a thermosetting component, wherein the (B) thermosetting component includes (B1) a compound with an allyl group and (B2) a compound with a maleimide group.

Abstract: Provide is a dicing die-bonding film that prevents the occurrence of reflow cracking and that is capable of manufacturing a semiconductor device having excellent reliability with good productivity. The dicing die-bonding film of the present invention comprises at least: a dicing film in which a pressure-sensitive adhesive layer is provided on a support base material; and a die-bonding film that is provided on the pressure-sensitive adhesive layer, wherein the dicing die-bonding film has a water absorption rate of 1.5% by weight or less calculated from the following formula (1). [Numerical Formula 1] [(M2?M1)/M1]×100=Water absorption rate(% by weight)??(1) (wherein, M1 represents the initial weight of the dicing die-bonding film, and M2 represents the weight after the dicing die-bonding film is left under an atmosphere of 85° C. and 85% RH for 120 hours to absorb moisture.

Abstract: A chip package structure includes a substrate, a die, and a package body. The substrate includes a single patterned, electrically conductive layer, and a patterned dielectric layer adjacent to an upper surface of the electrically conductive layer. A part of a lower surface of the electrically conductive layer forms first contact pads for electrical connection externally. The patterned dielectric layer exposes a part of the upper surface of the electrically conductive layer to form second contact pads. The electrically conductive layer exposes the lower surface of the patterned dielectric layer on a lower periphery of the substrate. The die is electrically connected to the second contact pads, the patterned dielectric layer and the die being positioned on the same side of the electrically conductive layer. The package body is disposed adjacent to the upper surface of the electrically conductive layer and covers the patterned dielectric layer and the die.

Abstract: A semiconductor device is provided in which a semiconductor chip is bonded to a substrate with a sufficiently increased bonding strength and cracking is assuredly prevented which may otherwise occur due to heat shock, heat cycle and the like. The semiconductor device includes a semiconductor chip and a substrate having a bonding area to which the semiconductor chip is bonded via a metal layer. The metal layer includes an Au—Sn—Ni alloy layer and a solder layer provided on the Au—Sn—Ni alloy layer. Undulations are formed in an interface between the Au—Sn—Ni alloy layer and the solder layer.

Abstract: An electrode connection structure of a semiconductor chip is provided to realize a highly reliable electrical connection with low stress without using a bump. A conductive member may be used for such an electrode connection structure. A semiconductor device is provided wherein semiconductor chips are arranged in layers without providing the semiconductor chips with a through via, and a method is provided for manufacturing such a semiconductor device. A part or all of the surface of a horizontal recess, which is formed in an adhesive layer arranged between a first electrode of a lower layer and a second electrode of an upper layer, is provided with a conductive member for connecting the first electrode and the second electrode.

Abstract: Disclosed are a semiconductor apparatus and a manufacturing method thereof. The manufacturing method of the semiconductor apparatus includes: forming a semiconductor chip on a semiconductor substrate; adhering a carrier wafer with a plurality of through holes onto the semiconductor chip; polishing the semiconductor substrate; forming a first via hole at the rear side of the polished semiconductor substrate; forming a first metal layer below the polished semiconductor substrate and at the first via hole; and removing the carrier wafer from the polished semiconductor substrate.

Abstract: A method includes providing a carrier with an adhesive layer disposed thereon; and providing a die including a first surface, a second surface opposite the first surface. The die further includes a plurality of bond pads adjacent the second surface; and a dielectric layer over the plurality of bond pads. The method further includes placing the die on the adhesive layer with the first surface facing toward the adhesive layer and dielectric layer facing away from the adhesive layer; forming a molding compound to cover the die, wherein the molding compound surrounds the die; removing a portion of the molding compound directly over the die to expose the dielectric layer; and forming a redistribution line above the molding compound and electrically coupled to one of the plurality of bond pads through the dielectric layer.

Abstract: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate with a die attach area, and forming a layer on the substrate outside of the die attach area. The layer may be formed from a fluoropolymer material. The method also includes coupling a die to the substrate in the die attach area, wherein a gap remains between the die and the die attach area. The method also includes placing an underfill material in the gap and adjacent to the layer on the substrate. Examples of fluoropolymer materials which may be used include polytetrafluoroethylene (PTFE) and perfluoroalkoxy polymer resin (PFA). Other embodiments are described and claimed.

Abstract: A Quad Flat Pack (QFP) device includes a semiconductor die attached to a flag of a lead frame. Bonding pads of the die are electrically connected to inner and outer rows of leads of the lead frame with bond wires. The die, die flag, bond wires and portions of the inner and outer leads are covered with a mold compound, which defines a package body. The outer leads are similar to the gull-wing leads of a conventional QFP device while the inner leads form contact points at a bottom surface of the package body. A cut is performed on an inner side of the inner leads to separate the inner leads from the die pad.

Abstract: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175-C is 2000 Pa or more.

Abstract: An electronic component, in which the outer perimeter portion of a component (2) is surrounded with a first sealing resin (4), a second sealing resin (3) is filled within the periphery of the first sealing resin (4), the component (2) and a board (1) are electrically connected by a wire (5), the edge, in the vicinity of which the wire (5) passes, of the outer perimeter edge portions of the component (2) is formed to be a chamfered oblique surface (31), and the wire (5) is provided to extend to the board (1) along the oblique surface (31). By this means, the overall height of the electronic component can be kept low.

Abstract: A method for manufacturing a semiconductor package, the method comprising providing a substrate having opposite first and second surfaces and having one or more through openings formed therethrough from the first to the second surfaces at predefined positions; providing at least one first die having first and second opposite surfaces and having one or more first contact terminals on the first surface of the at least one first die; placing the at least one first die with the first surface thereof on the first surface of the substrate, with an adhesive applied therebetween outside the one or more through openings, such that the one or more through openings are aligned to the one or more first contact terminals, whereby a die assembly having correspondingly opposite first and second surfaces is formed; providing the first surface of the die assembly with a first plating layer of an electrically conductive plating material to electrically contact the one or more first contact terminals, wherein the plating materi

Abstract: Embodiments of the present invention relate to forming semiconductor device package with a heat sink. In one embodiment, a subassembly comprising a die attached to a lead frame is formed, a heat sink is provided in a molding cavity, and the subassembly is coupled to the heat sink while the heat sink is in the molding cavity. In certain embodiments, a second component of the lead frame can be substituted for the heat sink. Such techniques can simplify the manufacturing process for semiconductor packages having a heat sink or lead frame with a second component.

Abstract: A method of making a semiconductor chip assembly includes providing a bump and a ledge, mounting a first adhesive on the ledge including inserting the bump into an opening in the first adhesive, mounting a conductive layer on the first adhesive including aligning the bump with an aperture in the conductive layer, then flowing the first adhesive between the bump and the conductive layer, solidifying the first adhesive, then providing a heat spreader that includes the bump, a base and the ledge, then mounting a second adhesive on the ledge, mounting a conductive trace that includes a pad and a terminal on the second adhesive, then mounting a semiconductor device on the bump in a cavity in the bump, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.

Abstract: A stacked semiconductor package includes an upper unit package and a lower unit package. The lower unit package includes a substrate, a semiconductor chip disposed on an upper surface of the substrate, terminal pads arranged on an upper surface of the semiconductor chip, protrusions formed on the terminal pads, a protective layer formed on the substrate and covering the semiconductor chip and the protrusions, and openings formed in the protective layer and exposing the protrusions. The upper unit package includes a substrate, ball lands provided on a lower surface of the substrate, and solder balls formed on the ball lands. The solder balls of the upper unit package are inserted into the openings of the lower unit package to be connected to the protrusions of the lower unit package.

Abstract: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and dual adhesives. The heat spreader includes a bump, a base and a ledge. The conductive trace includes a pad and a terminal. The semiconductor device is mounted on the bump in a cavity in the bump, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The bump extends into an opening in the first adhesive and is aligned with and spaced from an opening in the second adhesive. The base and the ledge extend laterally from the bump. The first adhesive is sandwiched between the base and the ledge, the second adhesive is sandwiched between the conductive trace and the ledge and the ledge is sandwiched between the adhesives. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.

Abstract: A fabricating method of a semiconductor package structure is provided. A dielectric layer having a first surface and a second surface is provided. A patterned metal layer has been formed on the first surface of the dielectric layer. An opening going through the first and the second surfaces is formed. A carrier having a third surface and a fourth surface is formed at the second surface. A portion of the third surface is exposed by the opening of the dielectric layer. A semiconductor die having a joining surface and a side-surface is joined in the opening. At least a through hole going through the third and the fourth surfaces is formed. A metal layer having at least a heat conductive post extending from the fourth surface of the carrier to the through hole and disposed in the through hole and a containing cavity is formed on the fourth surface.

Abstract: A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.

Abstract: A semiconductor package includes: a first encapsulant having tapered through holes each having a wide top and a narrow bottom; tapered electrical contacts disposed in the tapered through holes; circuits disposed on a top surface of the first encapsulant and each having one end connecting one of the electrical contacts and the other end having a bonding pad disposed thereon such that the bonding pads are circumferentially arranged to define a die attach area on the top surface of the first encapsulant. As such, a semiconductor chip can be disposed on the top surface of the first encapsulant in the die attach area and electrically connected to the bonding pads through conductive elements, and further a second encapsulant encapsulates the semiconductor chip, the conductive elements, the circuits and the first encapsulant so as to prevent falling off of the electrical contacts and reduce the length of the conductive elements.

Abstract: In a manufacturing method of a molded package, a lead frame including an island portion and a support portion is prepared. A circuit chip is mounted on the island portion, and the sensor chip is arranged such that a first end section having an electric connecting portion is adjacent to the circuit chip and a second end section having a sensing portion is supported by the support portion. The circuit chip and the electric connecting portion of the first end section is electrically connected through a connection member. The circuit chip, the island portion, the connection member and the first end section are sealed with a resin while maintaining the support state. After the sealing, the support portion is cut from the lead frame and separated from the second end section.

Abstract: A semiconductor element-embedded substrate includes a semiconductor element; a chip component; a peripheral insulating layer covering at least the outer circumferential side surfaces thereof; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate. The built-in semiconductor element includes a terminal on the upper surface side thereof, and this terminal is electrically connected to the upper surface-side wiring line. The built-in chip component includes an upper surface-side terminal electrically connected to the upper surface-side wiring line; a lower surface-side terminal electrically connected to the lower surface-side wiring line; and a through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal.

Abstract: Provided is a manufacturing method for a non-contact communication medium, including: forming in a first region a first structure including an IC chip mounted on the first region, a first adhesive in an uncured state, which is applied on the IC chip, and a first plate member placed on the first adhesive; forming in a second region a second structure including a second adhesive in an uncured state, which is applied on the second region, and a second plate member placed on the second adhesive; sandwiching the first region and the second region by a first partition wall capable of partitioning the first region and accommodating the first structure and a second partition wall capable of partitioning the second region and accommodating the second structure; and heating the first partition wall and the second partition wall, to thereby thermally cure the first adhesive and the second adhesive, respectively.

Abstract: Apparatus including a chip substrate having a first chip surface facing away from a second chip surface; an array of microelectronic elements on the first chip surface; and an array of conductors each in communication with one of the microelectronic elements, the conductors passing through the chip substrate and fully spanning a distance between the first and second chip surfaces.

Abstract: A packaged microchip has a lead frame with a die directly contacting at least a single, contiguous portion of the lead frame. The portion of the lead frame has a top surface forming a concavity and contacting the die. The packaged microchip also has mold material substantially encapsulating part of the top surface of the portion of the lead frame.

Abstract: A conductor having a projecting portion is formed which forms a terminal portion. An uncured prepreg including a reinforcing material is closely attached to the conductor and the prepreg is cured to form an insulating film including the reinforcing material. When the prepreg is closely attached, the prepreg is stretched by the projecting portion, so that a region of the prepreg, which is closely attached to the conductor, can be thinner than the other region of the prepreg. Then, by reducing the thickness of the entire insulating film, an opening can be formed in the portion having a smaller thickness. The step of reducing the thickness can be performed by etching. Further, it is preferable not to remove the reinforcing material in this step. The strength of a terminal and an electronic device can be increased by leaving the reinforcing material at the opening.

Abstract: A method of making a stackable semiconductor assembly that includes a semiconductor device, a heat spreader, an adhesive, a terminal, a plated through-hole and build-up circuitry is disclosed. The heat spreader includes a bump, a base and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the build-up circuitry and thermally connected to the bump. The bump extends from the base into an opening in the adhesive, the base extends vertically from the bump opposite the cavity and the flange extends laterally from the bump at the cavity entrance. The build-up circuitry provides signal routing for the semiconductor device. The plated through-hole provides signal routing between the build-up circuitry and the terminal. The heat spreader provides heat dissipation for the semiconductor device.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: stacking and adhering a second semiconductor chip on a first semiconductor chip via an adhesive layer; adjusting at least one of an elasticity modulus of the adhesive layer, a sink amount of the adhesive layer, a thickness of a protective film at a surface of the first chip, and an elasticity modulus of the protective film such that “y” in a following formula is 70 or less; and sealing the chips by a molding resin with filler particles. y=74.7?82.7a1+273.2a2?9882a3+65.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead array having an innermost space with an innermost lead having an inner lead profile different around an inner non-horizontal side of the innermost lead; forming a middle lead having a middle lead profile the same around a lead side of the middle lead; placing an integrated circuit in the innermost space adjacent to the innermost lead; and forming a package encapsulation over the integrated circuit, the innermost lead, and the middle lead.

Abstract: A substrate for integrated circuit package is disclosed. The substrate comprises an electrically conductive leadframe having a first side and an opposing second side. The substrate has a first bonding compound disposed in a first recessed portion of the first side and a second bonding compound disposed in at least a portion of a second recessed portion of the leadframe, selectively exposing a selected area of the leadframe on the second side. In an exemplary embodiment, the second bonding compound is a photolithographic material. A method of manufacturing a substrate for integrated circuit package is also disclosed.

Abstract: A thermally enhanced electronic package comprises a chip, a substrate, an adhesive, and an encapsulation. The adhesive or the encapsulation is mixed with carbon nanocapsules. The substrate includes an insulation layer and a wiring layer formed on the substrate. The adhesive covers the chip and the substrate. The chip is electrically connected to the wiring layer. The encapsulation covers the chip and the substrate.

Abstract: Preparation methods of forming packaged semiconductor device, specifically for flip-chip vertical power device, are disclosed. In these methods, a vertical semiconductor chip is flip-chip attached to a lead frame and then encapsulated with plastic packing materials. Encapsulated chip is then thinned to a predetermined thickness. Contact terminals connecting the chip with external circuit are formed by etching at least a bottom portion of the lead frame connected.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a mountable assembly includes: forming an integrated circuit device having a non-horizontal device side, an active device side, and a passive device side, providing a first integrated circuit die having an active side, a passive side, and an internal interconnect on the active side, applying a die attach adhesive on the passive side, attaching the passive side to the passive device side with the die attach adhesive, and applying an underfill on the passive device side and the internal interconnect, the underfill having a non-horizontal underfill side coplanar with the non-horizontal device side; and mounting on a substrate the mountable assembly.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.