Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a die attach pad integrally connected to a connector portion and a lead; attaching an integrated circuit die to the die attach pad; connecting an internal interconnect to the integrated circuit die and the lead; forming an encapsulation over the integrated circuit die; removing the connector portion to separate the die attach pad and the lead; and forming an isolation cover between the die attach pad and the lead.

Abstract: A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the wiring layers, and the vias is electrically connected to the metal plate.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a peripheral lead having a peripheral lead bottom side, a peripheral lead top side, a peripheral lead non-horizontal side, a peripheral lead horizontal ridge, and a peripheral lead conductive plate, the peripheral lead horizontal ridge protruding from the peripheral lead non-horizontal side; forming a central lead adjacent to the peripheral lead; forming a first top distribution layer on the peripheral lead top side; connecting an integrated circuit to the first top distribution layer; applying an insulation layer directly on a bottom extent of the first top distribution layer and a peripheral lead ridge lower side of the peripheral lead horizontal ridge; and attaching a heatsink to the central lead under the integrated circuit.

Abstract: A method of manufacture of an integrated circuit package system includes: forming a paddle, an outer lead, and an inner lead between the paddle and the outer lead; forming a non-vertical paddle edge of the paddle and a non-vertical lead edge of the inner lead facing the non-vertical paddle edge; and encapsulating an integrated circuit die over the paddle.

Abstract: A package and method of making thereof. The package includes a first plated area, a second plated area, a die, a bond, and a molding. The die is attached to the first plated area, and the bond couples the die to the first and/or the second plated areas. The molding encapsulates the die, the bonding wire, and the top surfaces of the first and second plated areas, such that the bottom surfaces of the first and second plated areas are exposed exterior to the package.

Abstract: Product management and/or prompt defect analysis of a semiconductor device may be carried out without reducing the throughput in assembly and testing. Unique identification information is attached to a plurality of substrates (lead frames) used in manufacturing a semiconductor device (QFP) and to a transport unit for transporting a plurality of substrates, respectively. Identification information (rack ID) of the transport unit and identification information (substrate ID) of the substrate stored into the transport unit are associated with each other. The substrate is taken out from the transport unit set to a loader unit of each manufacturing apparatus and supplied to a processing unit, of the apparatus and in storing the substrate, the processing of which is complete, into a transport unit of an unloader unit of the apparatus, an association between identification information of the transport unit and the identification information of the substrate is checked.

Abstract: An integrated circuit package system is provided forming a die support system from a padless lead frame having die supports with each substantially equally spaced from another, and attaching an integrated circuit die having a peripheral area on the die supports.

Abstract: A carrier body for a semiconductor component, in particular for an optoelectronic semiconductor component, is specified. Said carrier body has a connecting layer and a conductor layer, which are connected to one another via main areas facing one another. The connecting layer, the conductor layer or both the connecting layer and the conductor layer has/have at least one thinned region in which the layer thickness of said layer(s) is less than the maximum layer thickness of said layer(s). The connecting layer is either completely electrically conductive and electrically insulated at least from parts of the conductor layer or it is electrically insulating at least in parts. Furthermore, a semiconductor component comprising the electrical connection conductor and also a method for producing the carrier body are specified.

Abstract: Embodiments of the present invention are directed to a thermal leadless array package with die attach pad locking feature and methods of producing the same. A copper layer is half-etched on both surfaces to define an array of package contacts and a die attach pad. Each die attach pad is fully embedded in encapsulate material to provide a positive mechanical locking feature for better reliability. In some embodiments, the contacts include four active corner contacts.

Abstract: A method of manufacture of an integrated circuit packaging system includes providing a lead-frame having an inner portion and a bottom cover directly on a bottom surface of the inner portion; forming an insulation cover directly on the lead-frame with the insulation cover having a connection opening; connecting an integrated circuit die to the lead-frame through the connection opening with the integrated circuit die over the insulation cover; forming a top encapsulation directly on the insulation cover; forming a routing layer having a conductive land directly on the bottom cover by shaping the lead-frame; and forming a bottom encapsulation directly on the conductive land with the bottom cover exposed from the bottom encapsulation.

Abstract: A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.

Abstract: A semiconductor package has a semiconductor chip, a lead frame in which a semiconductor chip is mounted on a die pad, and a resin sealing the semiconductor chip and the die pad from an upper surface and a lower surface, the resin has a concave portion disposed at the surface and a concave portion situated inside the concave portion in a plan view.

Abstract: A method of manufacture of an integrated circuit packaging system includes providing a lead-frame having an inner portion and a bottom cover directly on a bottom surface of the inner portion; forming an insulation cover directly on the lead-frame with the insulation cover having a connection opening; connecting an integrated circuit die to the lead-frame through the connection opening with the integrated circuit die over the insulation cover; forming a top encapsulation directly on the insulation cover; forming a routing layer having a conductive land directly on the bottom cover by shaping the lead-frame; and forming a bottom encapsulation directly on the conductive land with the bottom cover exposed from the bottom encapsulation.

Abstract: In accordance with an embodiment of the present invention, a semiconductor device includes a leadframe having a plurality of leads and a die paddle and a semiconductor module attached to the die paddle of the leadframe. The semiconductor module includes a first semiconductor chip disposed in a first encapsulant. The semiconductor module has a plurality of contact pads coupled to the first semiconductor chip. The semiconductor device further includes a plurality of interconnects coupling the plurality of contact pads with the plurality of leads, and a second encapsulant disposed at the semiconductor module and the leadframe.

Abstract: A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the molded package, such as on top of a device die mounted on the package substrate or a lead frame. In order to overcome cavity wall angular limitations introduced by conformability issues associated with film-assisted molding, a gel reservoir feature is formed so that gel used to protect components in the cavity does not come in contact with a lid covering the cavity or the junction between the lid and the package attachment region. The gel reservoir is used in conjunction with a formed level setting feature that controls the height of gel in the cavity. Benefits include decreased volume of the cavity, thereby decreasing an amount of gel-fill needed and thus reducing production cost of the package.

Abstract: A semiconductor package includes leads around the periphery of a chip and leads under the chip having connecting segments for increasing I/O capability. A filling material may be used under the chip, which may provide a lead locking function. Various methods of forming the semiconductor package are further provided.

Abstract: Disclosed herein is a power module package including an external connection terminal, a substrate in which a fastening unit allowing one end of the external connection terminal to be insertedly fastened thereinto is formed to penetrate in a thickness direction thereof, and a semiconductor chip mounted on one surface of the substrate.

Abstract: One embodiment is directed towards a method of manufacturing a packaged circuit. The method includes partially etching an internal surface of a lead frame at dividing lines between future sections of the lead frame as first partial etch. One or more dies are attached to the internal surface of the lead frame and encapsulated. The method also includes partially etching an external surface of the lead frame at the dividing lines to disconnect different sections of lead frame as a second partial etch, wherein the second partial etch removes a laterally wider portion of the lead frame than the first partial etch of the internal surface; and partially etching the external surface of the lead frame as a third partial etch, wherein the third partial etch overlaps a portion of the second partial etch and extends deeper into the lead frame than the second partial etch.

Abstract: A die attach method for a semiconductor chip with a back metal layer located at the back surface of the semiconductor chip comprises the steps of forming a bonding ball array including a plurality of bonding balls with a same height on a die attach area at a top surface of a die paddle; depositing a die attach material in the bonding ball array area with a thickness of the die attach material equal or slightly larger than the height of the bonding ball; attaching the semiconductor chip to the die attach area at the top surface of the die paddle by the die attach material, wherein the bonding ball array controls the bond line thickness of the die attach material between the back metal layer and the top surface of the die paddle and prevents the semiconductor chip from rotating on the die attach material when it is melted.

Abstract: A method according to the invention has a bonding process of mounting a semiconductor chip on an upper surface of a die pad that has the upper surface whose area is larger than a reverse side of the semiconductor chip. It also has a sealed body formation process of sealing the semiconductor chip so that an undersurface opposite to the upper surface of the die pad may be exposed after the bonding process. Here, the upper surface of the die pad is arranged around an area over which the semiconductor chip is mounted, and has a hollow part arrangement area in which a groove or multiple holes are formed. Moreover, surface roughness of the upper surface is made coarser than surface roughness of the undersurface.

Abstract: Processes of assembling microelectronic packages with lead frames and/or other suitable substrates are described herein. In one embodiment, a method for fabricating a semiconductor assembly includes forming an attachment area and a non-attachment area on a lead finger of a lead frame. The attachment area is more wettable to the solder ball than the non-attachment area during reflow. The method also includes contacting a solder ball carried by a semiconductor die with the attachment area of the lead finger, reflowing the solder ball while the solder ball is in contact with the attachment area of the lead finger, and controllably collapsing the solder ball to establish an electrical connection between the semiconductor die and the lead finger of the lead frame.

Abstract: Disclosed herein is a power module package including an external connection terminal; a substrate in which a fastening unit allowing one end of the external connection terminal to be insertedly fastened thereinto is buried at a predetermined depth in a thickness direction; and a semiconductor chip mounted on one surface of the substrate.

Abstract: A lead carrier provides support for an integrated circuit chip and associated leads during manufacture as packages containing such chips. The lead carrier includes a temporary support member with multiple package sites. Each package site includes a die attach pad surrounded by a plurality of terminal pads. The pads are formed of a sintered electrically conductive material. A chip is mounted upon the die attach pad and wire bonds extend from the chip to the terminal pads. The pads, chip and wire bonds are all encapsulated within a mold compound. The temporary support member can be peeled away and then the individual package sites can be isolated from each other to provide completed packages including multiple surface mount joints for mounting within an electronics system board. Edges of the pads are contoured to cause the pads to engage with the mold compound to securely hold the pads within the package.

Abstract: In accordance with one or more embodiments, a flange package comprises a flange and an interposer having two or more fingers disposed in an interposer trench. The flange has a mold lock formed about a periphery of the interposer trench. A dielectric ring comprising a dielectric material is formed in the interposer trench, and in and around the periphery of the mold lock. A semiconductor die is disposed within the dielectric ring having gate pads and source pads formed on a first side, and having drain pads disposed on a second side of the die. The gate pads are coupled to the interposer and the source pads are coupled to the flange. A gate lead is coupled to the interposer and a drain lead is coupled to the drain pads. Other embodiments are disclosed.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead having a lead overhang at an obtuse angle to a lead top side and having a lead ridge protruding from a lead non-horizontal side, the lead overhang having a lead overhang-undercut side at an acute angle to a lead overhang non-horizontal side; forming a lead conductive cap completely covering the lead overhang non-horizontal side and the lead top side; forming a package paddle adjacent the lead; mounting an integrated circuit over the package paddle; and forming an encapsulation over the integrated circuit, the package paddle, and the lead.

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a die to a carrier material, wherein the carrier material comprises a top layer and a bottom layer separated by an etch stop layer; forming a dielectric material adjacent the die, forming a coreless substrate by building up layers on the dielectric material, and then removing the top layer carrier material and etch stop layer from the bottom layer carrier material.

Abstract: A semiconductor package includes a chip, a carrier, a bonding wire and a molding compound. The chip includes a pad. The carrier includes a finger and has an upper surface and a lower surface opposite to the upper surface, wherein the upper surface supports the chip. The bonding wire is extended from the finger to the pad for electrically connecting the chip to the carrier, wherein the bonding wire defines a projection portion on the upper surface of the carrier, a straight line is defined to pass through the finger and pad, there is a predetermined angle between the tangent line of the projection portion at the finger and the straight line. The molding compound seals the chip and the bonding wire, and covers the carrier.

Abstract: A semiconductor package is provided, including: an insulating layer; a semiconductor element embedded in the insulating layer; an adhesive body embedded in the insulating layer, wherein a portion of the semiconductor element is embedded in the adhesive body; a patterned metal layer embedded in the adhesive body and electrically connected to the semiconductor element; and a redistribution structure formed on the insulating layer and electrically connected to the patterned metal layer. By embedding the semiconductor element in the adhesive body, the present invention can securely fix the semiconductor element at a predetermined position without any positional deviation, thereby improving the product yield.

Abstract: A chip arrangement is provided. The chip arrangement including: a chip including at least one electrically conductive contact; a passivation material formed over the at least one electrically conductive contact; an encapsulation material formed over the passivation material; one or more holes formed through the encapsulation material and the passivation material, wherein the passivation material at least partially surrounds the one or more holes; and electrically conductive material provided within the one or more holes, wherein the electrically conductive material is electrically connected to the at least one electrically conductive contact.

Abstract: A method of manufacturing a semiconductor device includes a sealing step of sealing an inner lead of a lead frame with a resin, and a bending step of bending a target bending region in which a stress by bending is not applied to a resin burr generated in the sealing step.

Abstract: The invention relates to a component and a method for producing said component. The component comprises a substrate (S), a chip (CH), a frame (MF), which is connected to the substrate (S) and on which the chip (CH) bears. A metallic closure layer (ML) encompasses the frame (MF), the substrate (S) and the chip (CH) such that a volume enclosed by the substrate (S), the chip (CH) and the frame (MF) is hermetically sealed.

Abstract: An assembly process for a heatsink attachment module for a chip packaging apparatus is provided and includes attaching a semiconductor chip to a substrate to form a module subassembly, placing a load frame and shim in a fixture, dispensing adhesive to the load frame and loadably placing the module subassembly chip face down in the fixture.

Abstract: An embodiment of a packaged semiconductor device includes a communication pad formed in a side surface, which is operatively coupled to a communication circuit so as to enable the establishing of a wireless communication channel to an adjacently positioned packaged semiconductor device. The communication pad may be formed upon cutting a block including the packaged semiconductor device and an appropriately positioned and dimensioned conductor. Thus, well-established techniques for incorporating a lead frame or any other conductive system in a package may be applied in order to impart wireless lateral connectivity to packaged semiconductor devices in an electronic system.

Abstract: Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a die attach pad integrally connected to a connector portion and a lead; attaching an integrated circuit die to the die attach pad; connecting an internal interconnect to the integrated circuit die and the lead; forming an encapsulation over the integrated circuit die; removing the connector portion to separate the die attach pad and the lead; and forming an isolation cover between the die attach pad and the lead.

Abstract: In a semiconductor device, semiconductor chips and lead frames are soldered at the same time on an insulating circuit board by one reflow soldering, and the positions of the externally led out lead frames undergo no change. In manufacturing the semiconductor device, after power semiconductor chips and control ICs are mounted on an insulating circuit board, and lead frames are disposed thereon, the semiconductor chips and lead frames are soldered at the same time on the insulating circuit board by one reflow soldering. Furthermore, after a primary bending work is carried out on the lead frames, and a terminal case is mounted over the insulating circuit board, a secondary bending work is carried out on the lead frames.

Abstract: In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead. The module further includes a second semiconductor device and a circuit board. The second semiconductor device has a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead. The circuit board has a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes. At the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.

Abstract: A lead frame includes a die stage; an inner lead provided near the die stage; and a bus bar provided between the die stage and the inner lead and supported by a hanging lead, wherein the hanging lead is inclined with respect to the inner lead, and a wire connection face of the bus bar is displaced with respect to a wire connection face of the inner lead in a direction of a frame thickness.

Abstract: Provided are: a lead frame enabling efficient manufacturing of multiple circuit devices; and a method for manufacturing a circuit device using the same. In the lead frame of the present invention, units are arranged and frame-shaped first and second supporters are provided around the units to mechanically support the units. Moreover, a half groove is provided in the first supporter at a portion on an extended line of a dividing line defined at a boundary between each adjacent two of the units. Furthermore, a penetration groove penetrating a part of the second supporter at a portion on an extended line of another dividing line is provided.

Abstract: To provide a semiconductor device having suspension leads with less distortion. In QFN having a plurality of external terminal portions at the periphery of the bottom surface of a sealing body, a plurality of leads is linked to a plurality of long suspension leads of the QFN at an intermediate portion thereof or at between the intermediate portion and a position near the die pad. These long suspension leads are each supported by these leads, making it possible to suppress distortion of each of the suspension leads in a wire bonding step or molding step in the fabrication of the QFN.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a warpage-compensation zone with a substrate-interior layer exposed from a top substrate-cover, and the warpage-compensation zone having contiguous exposed portion of the substrate-interior layer over corner portions of the package substrate; connecting an integrated circuit die to the package substrate with an internal interconnect; and forming an encapsulation over the integrated circuit die, with the encapsulation directly on the substrate-interior layer in the warpage-compensation zone.

Abstract: The present technology discloses a multi-die package. The package comprises a lead frame structure and three dies including a first flip chip die, a second flip chip die and a third flip chip die stacked vertically. The first flip chip die is mounted on the bottom surface of the lead frame structure through the flip chip bumps; the second flip chip is mounted on the top surface of the first flip chip die through flip chip bumps; and the third flip chip die is mounted on the top surface of the lead frame structure through flip chip bumps.

Abstract: Embodiments of a method for preparing a leadframe for integrated circuit (IC) die packaging in a molded package with an exposed die pad are disclosed. In one embodiment, a method involves producing a leadframe with a die pad, wherein the die pad has a top surface, a bottom surface, and a perimeter edge. The die pad is then planarized to flatten burrs that may exist at the perimeter edge of the die pad, wherein planarizing the die pad comprises embedding tool markings in the die pad at the perimeter edge of the die pad, the tool markings including a series of peaks and valleys that run parallel to the perimeter edge at all locations around the perimeter edge. Embodiments of a leadframe for IC die packaging in a molded package are also disclosed.

Abstract: A method of manufacturing a high-capacity semiconductor package includes preparing a leadframe not comprising a chip mount area and comprising only a lead on a tape; attaching an interposer on a center area of the leadframe; stacking semiconductor chips stepwise on a first surface of the interposer; performing a first wire bonding process so as to connect the semiconductor chips, the lead, and the interposer; performing a first molding process so as to encapsulate a top surface of the leadframe, the semiconductor chips, and wires; detaching a tape from the leadframe and turning the leadframe on which the first molding process has been performed upside down; stacking semiconductor chips on a second surface of the interposer; performing a second wire bonding process so as to connect the semiconductor chips, the lead, and the interposer; and performing a second molding process so as to encapsulate a bottom surface of the leadframe, the semiconductor chips, and wires.

Abstract: A rear surface opposite to one plane of a die pad is formed to be exposed from one plane of a sealing resin. In addition, a concave portion disposed to be parallel with at least a first side of an outermost edge of a central structure and a second side adjacent to the first side, respectively, is formed in the one plane of the sealing resin. Here, a depth of the concave portion is equal to or greater than a height of the outermost edge of the central structure.

Abstract: A semiconductor device includes (i) a tape base material, (ii) a wiring pattern, (iii) a semiconductor element which is electrically connected with the wiring pattern, (iv) a top-side insulating protective film which covers a top surface of the tape base material and has an top-side opening section provided in a region where the top-side insulating protective film faces the semiconductor element, and (v) a reverse-side insulating protective film which covers a reverse surface of the tape base material and has a reverse-side opening section provided on a reverse side below the top-side opening section. The top-side insulating protective film has a protruding opening section extending outwardly from the region. An opening of the reverse-side opening section is 1.00 time to 8.50 times larger in an area than the region.

Abstract: Embodiments of the subject application provide for a circuit comprising: a lead frame having a first plurality of exposed terminals, the lead frame defining a plane; a laminate substrate in the plane defined by the lead frame, adjacent to the lead frame, and electrically coupled to the lead frame, the laminate substrate having a first surface including a second plurality of exposed terminals and a second surface opposite the first surface; a first one or more dies mounted on the lead frame and electrically coupled to the lead frame; and a second one or more dies mounted on the second surface of the laminate substrate and electrically coupled to the laminate substrate.

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.

Abstract: A lead frame having a die thereon connects a conductive area on the die to a lead frame contact using a conductive clip that includes a structural portion that is received with a recess-like “tub” formed in the lead frame contact. The end of the clip received in the tub is held in place during subsequent handling by a solder paste deposit until the clip and leadframe undergo solder reflow to effect a reliable electrical connection. The effective surface area between one side of the clip and the other side of the clip within the tub is different so that the surface tension of the liquefied solder formed during the solder reflow step will “draw” the clip into a preferred alignment against a “stop” surface.

Abstract: A semiconductor integrated circuit device includes a semiconductor chip having a memory cell array region surrounded with a peripheral circuit region and includes a plurality of bonding pads disposed at least in one row on only one side of the semiconductor chip. The circuit device may include first leads group disposed adjacent to the bonding pad side and a second leads group disposed opposite the first leads group. The second leads group may be formed over a portion of the semiconductor chip (lead-on-chip structure). A plurality of bonding wires connect the first and second leads group with the plurality of bonding pads respectively.