Abstract: A Quad Flat No Leads (QFN) package includes a lead frame, a chip, an encapsulant, and a protective layer. The lead frame includes a plurality of leads. Each of the leads has a lower surface that is divided into a contact area and a non-contact area. The chip is configured on and electrically connected to the lead frame. The encapsulant encapsulates the chip and the leads and fills spaces between the leads. The contact areas and the non-contact areas of the leads are exposed by the encapsulant. The protective layer covers the non-contact areas of the leads.

Abstract: A semiconductor apparatus comprising an integrated semiconductor circuit device having pluralities of electrode pads, pluralities of first external terminals connected to the electrode pads of the integrated semiconductor circuit device, an inductor disposed in a region surrounded by the first external terminals, and a resin portion sealing them, the integrated semiconductor circuit device being arranged on an upper surface of the inductor, and the inductor being exposed from a lower surface of the resin portion together with the first external terminals.

Abstract: A semiconductor encapsulation comprises a lead frame further comprising a chip carrier and a plurality of pins in adjacent to the chip carrier. A plurality of grooves opened from an upper surface of the chip carrier partially dividing the chip carrier into a plurality of chip mounting areas. A bottom portion of the grooves is removed for completely isolate each chip mounting area, wherein a width of the bottom portion of the grooves removed is smaller than a width of the grooves. In one embodiment, a groove is located between the chip carrier and the pins with a bottom portion of the groove removed for isolate the pins from the chip carrier, wherein a width of the bottom of the grooves removed is smaller than a width of the grooves.

Abstract: An electronic device package includes a substrate and wire columns arranged in groups about a neutral stress point of the substrate. The height of the wire columns is substantially uniform for the plural groups of wire columns, and a length of at least one of the wire columns is greater than the uniform height. A method of fabricating an electronic device package having a column grid array includes applying two templates on wire columns of the column grid array and bending at least one wire column to increase its length while maintaining a uniform height for the column grid array. In another aspect, an electronic device package substrate includes wire columns having at least one non-uniformity in lengths of the columns, and the length of a wire column corresponds to a distance of that wire column from the neutral stress point of the substrate.

Abstract: The present technology is directed toward semiconductors packaged by electrically coupling a plurality of die to an upper and lower lead frame. The opposite edges of each corresponding set of leads in the upper lead frame are bent. The leads in the upper lead frame are electrically coupled between respective contacts on respective die and respective lower portion of the leads in the lower lead frame. The bent opposite edges of each corresponding set of leads of the upper lead frame support the upper lead frame before encapsulation, for achieving a desired position of the plurality of die between the leads of the upper and lower lead frames in the packaged semiconductor. After the encapsulated die are separated, the upper leads have an L-shape and electrically couple die contacts on upper side of the die to leads on the lower side of the die so that the package contacts are on the same side of the semiconductor package.

Abstract: A method for manufacturing an integrated circuit package system includes: providing a leadframe; forming a protruding pad on the leadframe; attaching a die to the leadframe; electrically connecting the die to the leadframe; and encapsulating at least portions of the leadframe, the protruding pad, and the die in an encapsulant.

Abstract: Disclosed is a semiconductor device including first and second semiconductor elements, first and second external connection terminals and a sealing member. The first external connection terminal is provided at a first surface of the first semiconductor element. The second semiconductor element is provided at a second surface side, that is at a side opposite to the first surface, of the first semiconductor element. The second external connection terminal is connected to the second semiconductor element, and the second external connection terminal is configured to be, together with the first external connection terminal, connected to a wiring board. The sealing member seals the first and second semiconductor elements and exposes a portion, that is configured to be connected to the wiring board, of the first external connection terminal and a portion, that is configured to be connected to the wiring board, of the second external connection terminal.

Abstract: A lead frame for a resin-seal type semiconductor device, which includes a semiconductor element having an electrode, a bonding wire connected to the electrode of the semiconductor element, and a sealing resin covering and sealing the semiconductor element and the bonding wire. The lead frame includes a substrate frame, a four-layer plating, and a three-layer plating. The substrate frame include leads, a connection region, which is sealed by the sealing resin and connected to the bonding wire, and an exposed region, which is not sealed by the sealing resin. A four-layer plating is applied to a portion of the substrate frame that is to be connected to the bonding wire and sealed by the sealing resin. A three-layer plating is applied to an exposed region of the substrate frame that is exposed from the sealing resin.

Abstract: In one embodiment, a leadframe for a semiconductor package includes a source connection area for one transistor and a drain connection point for a second transistor, and a common connection for using a connection clip to couple a drain of the first transistor to a source of the second transistor and to the common connection.

Abstract: Terminals (2b, 2c) are divided into two along a common boundary, coatings (10, 11) most suitable for two conductive bonding materials (5, 6) to be used are exposed on the terminals (2b, 2c), the most suitable one of the coatings (10, 11) is selected, and the corresponding conductive bonding material (5, 6) is bonded onto the coating. Thus it is possible to improve the reliability of bonding and easily reduce a bonding resistance while suppressing a decrease in the reliability of a semiconductor element 3.

Abstract: A device includes a vertical power semiconductor chip having an epitaxial layer and a bulk semiconductor layer. A first contact pad is arranged on a first main face of the power semiconductor chip and a second contact pad is arranged on a second main face of the power semiconductor chip opposite to the first main face. The device further comprises an electrically conducting carrier attached to the second contact pad.

Abstract: A method of manufacturing an integrated circuit (IC) package is provided. The method includes mounting a fast plurality of contact members on a surface of a package member, and coupling a second plurality of contact members located on a first surface of an interposer substrate to corresponding ones of the first plurality of contact members. The interposer substrate is configured such that a circuit member mounted to a second surface of the interposer substrate is electrically coupled to the first plurality of contact members.

Abstract: A semiconductor chip for a tape automated bonding (TAB) package is disclosed. The semiconductor chip comprises a connection surface including a set of input pads connected to internal circuitry of the chip and for conveying external signals to the internal circuitry, the set of input pads comprising all of the input pads on the chip. The connection surface includes a set of output pads connected to internal circuitry of the chip and for conveying internal chip signals to outside the chip, the set of output pads comprising all of the output pads on the chip.

Abstract: Strip testing is applied to a plurality of integrated circuit dies that are each encapsulated in an encapsulant, that each have a set of externally accessible leads connected thereto, and that are electrically isolated from one another. Provision is made for the strip testing to be performed without mounting the encapsulated integrated circuit dies on a support tape.

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract: A support structure includes a support cell with a support substrate, junction sacrificial portions surrounding the support substrate, and pin blocks extending from the junction sacrificial portion toward the support substrate. A semiconductor chip is mounted to the support substrate and electrically wire bonded to the pin blocks. An encapsulating body covers the chip, with the pin blocks extending from the body. A transversal groove is formed in each pin block. Surfaces of the pin block and groove are electroplated with solder material. Each pin block is sectioned at the groove to define a pin having a first end corresponding to a portion of the groove surface of the groove and a second end corresponding to the sectioned portion of the pin block that is not electroplated with solder material. Sectioning causes the separation of the chip-insulating body assembly from the junction sacrificial portions.

Abstract: A semiconductor package including: a lead frame including a chip attachment unit and a lead unit; a semiconductor chip that is mounted on the chip attachment unit of the lead frame; a wire that electrically connects the semiconductor chip to the lead unit; an insulation layer formed in the lead frame under the chip attachment unit; and an encapsulant that seals an upper portion of the lead frame, the semiconductor chip, and the wire, wherein the lead unit does not protrude to the outside of the encapsulant.

Abstract: The reliability of a semiconductor device is enhanced. A first lead frame, a first semiconductor chip, a second lead frame, and a second semiconductor chip are stacked over an assembly jig in this order with solder in between and solder reflow processing is carried out to fabricate their assembly. Thereafter, this assembly is sandwiched between first and second molding dies to form an encapsulation resin portion. The upper surface of the second die is provided with steps. At a molding step, the second lead frame is clamped between the first and second dies at a position higher than the first lead frame; and a third lead frame is clamped between the first and second dies at a higher position. The assembly jig is provided with steps at the same positions as those of the steps in the upper surface of the second die in positions corresponding to those of the same.

Abstract: A method for attaching a metal surface to a carrier is provided, the method including: depositing a porous layer over at least one of a metal surface and a side of a carrier; and attaching the at least one of a metal surface and a side of a carrier to the porous layer by bringing a material into pores of the porous layer, resulting in the material forming an interconnection between the metal surface and the carrier.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having a mounting region; applying a mounting structure in the mounting region; mounting an integrated circuit die on the mounting structure; forming an encapsulation on the integrated circuit die and having an encapsulation cavity, the encapsulation cavity shaped by the mounting structure; forming a lead having a lead protrusion from the leadframe, the lead protrusion below a horizontal plane of the integrated circuit die; and removing the mounting structure for exposing the integrated circuit die.

Abstract: A substrate and a method of making thereof are disclosed. The substrate comprises an electrically conductive leadframe, the leadframe having a plurality of lands on a first side of the leadframe with a first recessed portion between the lands, and a plurality of routing leads on an opposing second side of the leadframe with a second recessed portion between the routing leads. The substrate also comprises a first bonding compound filling the first recessed portion. In one embodiment, the substrate also comprises a support material attached to the first bonding compound for holding the leadframe together. In another embodiment, the substrate comprises a second bonding compound filling the second recessed portion.

Abstract: An integrated circuit package system includes: providing a die-pad with a predefined slot and an integrated circuit attached to the die-pad; connecting the integrated circuit to the die-pad with a bond wire; encapsulating the integrated circuit and the bond wire with an encapsulation; and partitioning the die-pad with partial saw isolation grooves along a single axis, and into a side pad, and a die attach pad.

Abstract: In one embodiment, a method for forming an electronic package structure includes providing a single unit leadframe having first terminals on a first or top surface. An electronic device is attached to the single unit leadframe and electrically connected to the first terminals. The leadframe, first terminals, and the electronic device are encapsulated with an encapsulating material. Second terminals are then formed by removing portions of a second or bottom surface of the leadframe. In one embodiment, the method can be used to fabricate a thin substrate chip scale package (“tsCSP”) type structure.

Abstract: A semiconductor package includes a lead frame including a chip mounting portion and a terminal portion, a semiconductor chip, which is mounted on the chip mounting portion and connected to the terminal portion, a through groove penetrating the terminal portion from one surface on a side of the semiconductor chip to another surface in a thickness direction of the terminal portion, a lid portion covering an end portion of the through groove on the side of the semiconductor chip, and a resin portion sealing the semiconductor chip, wherein the another surface of the terminal portion and a side surface of the terminal portion facing an outside of the semiconductor package are coated by a plating film.

Abstract: The present invention provides a Quad Flat Non-leaded (QPN) package, which comprises a chip, a lead frame, a plurality of composite bumps and an encapsulant. The chip has a plurality of pads, and the lead frame has a plurality of leads. Each of the plurality of composite bumps has a first conductive layer and a second conductive layer. The first conductive layer is electrically connected between one of the pads and the second conductive layer, and the second conductive layer is electrically connected between the first conductive layer and one of the leads. The encapsulant encapsulates the chip, the leads and the composite bumps. Thereby, a QFN package with composite bumps and a semi-cured encapsulant is forming between the spaces of leads of lead frame before chip bonded to the lead frame are provided.

Abstract: The assembly of a chip (101) attached to a substrate (103) with wires (201) spanning from the chip to the substrate is loaded in a heated cavity (402) of a mold; the wire surfaces are coated with an adsorbed layer of molecules of a heterocyclic compound (302); a pressure chamber (404) of the mold is loaded with a solid pellet (410) of a packaging material including a polymerizable resin, the chamber being connected to the cavity; the vapor of resin molecules is allowed to spread from the chamber to the assembly inside the cavity during the time interval needed to heat the solid pellet for rendering it semi-liquid and to pressurize it through runners (403) before filling the mold cavity, whereby the resin molecules arriving in the cavity are cross-linked by the adsorbed heterocyclic compound molecules into an electrically insulating at least one monolayer of polymeric structures on the wire surfaces.

Abstract: A method of manufacturing integrated circuit (IC) devices includes the steps of providing a first frame that has openings each having a perimeter with shaped notches, placing a first die in at least one of the openings, and placing a second frame over the first frame. The second frame has a first partial dam bar with a first shaped tip that fits into a first shaped notch of the first frame. The method also includes the step of placing a third frame over the second frame. The third frame has a second partial dam bars with a second shaped tip that fits into a second shaped notch of the first frame. Each perimeter and the respective first and second partial dam bars cooperate to form a continuous dam completely encircling the die within the respective opening.

Abstract: A method for fixing a semiconductor chip on a circuit board is provided, which includes following steps. The circuit board is provided, which sequentially includes a substrate having a chip connecting portion, at least one metal wire and an insulating layer. An organic insulating material is formed on the insulating layer of the outside edge of the chip connecting portion. An anisotropic conductive film (ACF) is then formed to cover the chip connecting portion and a portion of the organic insulating material. Finally, a semiconductor chip is hot-pressed on the ACF. The organic insulating material formed on the insulating layer is used to prevent the metal wires beneath the insulating layer from occurring of corrosion. A semiconductor chip package structure is also provided.

Abstract: A power semiconductor package has an ultra thin chip with front side molding to reduce substrate resistance; a lead frame unit with grooves located on both side leads provides precise positioning for connecting numerous bridge-shaped metal clips to the front side of the side leads. The bridge-shaped metal clips are provided with bridge structure and half or fully etched through holes for relieving superfluous solder during manufacturing process.

Abstract: A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package.

Abstract: The outflow of die bond material is prevented and the quality and reliability of a semiconductor device are improved. A tab, a plurality of leads arranged around the tab, silver paste arranged on a chip supporting surface of the tab, and a semiconductor chip mounted via silver paste on the tab are included. Further, a plurality of wires which electrically connect a pad of the semiconductor chip, a lead, and a sealing body which does the resin seal of the semiconductor chip and the wires are also included. By forming a step part whose height is lower than the chip supporting surface at an edge part of the chip supporting surface of the tab, the silver paste protruded from the tab can be stopped at the step part. As a result, an outflow to the back surface of the sealing body of silver paste can be prevented.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a peripheral lead having a peripheral lead bottom side, a peripheral lead top side, a peripheral lead non-horizontal side, a peripheral lead horizontal ridge, and a peripheral lead conductive plate, the peripheral lead horizontal ridge protruding from the peripheral lead non-horizontal side; forming a first top distribution layer on the peripheral lead top side, the first top distribution layer having a first top terminal; connecting an integrated circuit to the first top distribution layer, the integrated circuit having a central portion directly over a plurality of the first top terminal; and applying an insulation layer directly on a bottom extent of the first top distribution layer and a peripheral lead ridge lower side of the peripheral lead horizontal ridge.

Abstract: A lead frame substrate, includes: a metal plate having first and second surfaces; a semiconductor element mounting section, semiconductor element electrode connection terminals, and a first outer frame section formed on the first surface; external connection terminals formed on the second surface and electrically connected with the semiconductor element electrode connection terminals; a second outer frame section formed on the second surface; and a resin layer formed on a gap between the first outer frame and the second outer frame. Each external connection terminal buried in the resin layer has at least one projection formed on a side surface thereof throughout a side lower portion of the first surface.

Abstract: A lead finger of a lead frame has a number of channels or grooves in a portion of its top surface that provide a locking mechanism for securing a bond wire to the lead finger. The bond wire may be attached to the lead finger by stitch bonding.

Abstract: In one embodiment, a semiconductor device includes a leadframe structure. A semiconductor die is attached to a die pad. Land connect bars are spaced apart from the die pad and a plurality of lands are between the land connect bars and the die pad and are spaced apart therefrom. Insulation members are adhered to the land connect bars and the plurality of lands to hold the land connect bars and the plurality of lands together and to electrically isolate them. An encapsulant covers the semiconductor die and at least portions of the plurality of lands, the die pad, and the land connect bars and further fills spaces between the land connect bars and the plurality of lands.

Abstract: An integrated circuit package includes an electronic sensor protected by a lid structure. The electronic sensor includes a transducer placed on a backside surface of a lead frame assembly. The lid structure is placed over the transducer and is attached to the lead frame assembly on the backside surface. The lid can define an air cavity around the transducer, such that mold compound, gel, or other protective chemical material is not placed in contact with the transducer. The transducer is therefore protected without a chemical protectant, lowering the cost of the integrated circuit package and maintaining the sensitivity and performance of the transducer.

Abstract: Provided are power device packages, which include thermal electric modules using the Peltier effect and thus can improve operational reliability by rapidly dissipating heat generated during operation to the outside, and methods of fabricating the same. An exemplary power device package includes: a thermal electric module having a first surface and a second surface opposite each other, and a plurality of n-type impurity elements and a plurality of p-type impurity elements alternately and electrically connected to each other in series; a lead frame attached to the first surface of the thermal electric module by an adhesive member; at least one power semiconductor chip and at least one control semiconductor chip, each chip being mounted on and electrically connected to the lead frame; and a sealing member sealing the thermal electric module, the chips, and at least a portion of the lead frame, but exposing the second surface of the module.

Abstract: A wafer level integrated circuit assembly method is conducted as follows. First, a mother device wafer with plural first posts is provided. The first posts are used for electrical connection and are made of copper according to an embodiment. Solder is sequentially formed on the first posts. The solder is preferably pre-formed on a wafer, and the locations of the solder correspond to the first posts of the mother device wafer. Consequently, the solder can be formed on or adhered to the first posts by placing the wafer having pre-formed solder onto the first posts. Plural dies having plural second posts corresponding to the first posts are placed onto the mother device wafer. Then, the solder is reflowed to bond the first and second posts, and the mother device wafer is diced.

Abstract: In accordance with the present invention, there is provided a routable substrate that may be used, for example, in relation to the manufacture of Dual and Quad Flat No-Lead (DFN/QFN) style semiconductor packages as a substrate or interposer of such packages. The method of fabricating the substrate effectively removes metal from the saw streets and provides a more stable surface structure for wire bonding. The substrate fabrication method also utilizes existing etching techniques which are implemented in a prescribed sequence to achieve no metal in the saw streets and to completely electrically isolated features. Further, the substrate fabrication method includes a molding step intended to replace pressure sensitive adhesive tapes.

Abstract: A lead frame or semiconductor device and a method of manufacturing the same in which where the unit lead frame of each semiconductor device after dicing was located in a lead frame before dicing can be known without an additional manufacturing step. The lead frame includes a plurality of unit lead frames each having a die pad, suspension leads coupled to the die pad, and leads formed around the die pad. An identification mark including at least one of a penetrating groove, recess, and convex is formed in at least one of the die pad, suspension leads, and leads. The identification mark of a first unit lead frame and the identification mark of a second unit lead frame are different from each other at least either in location in the unit lead frame or in shape.

Abstract: The suppression of resin leakage is combined with the suppression of damage to the functional wiring area of a wiring board in forming an encapsulation resin. A method for manufacturing a semiconductor device includes the step of clamping a wiring board with a first mold and a second mold. The second mold includes: a flat portion contacting a wiring board; a recessed portion forming a cavity to form an encapsulation resin; and a projecting portion formed at a location spaced apart from the recessed portion on the flat portion, the projecting portion projecting on the first mold side, and extending along the first edge of the wiring board.

Abstract: Various resistor circuits and methods of making and using the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a resistor onboard an interposer. The resistor is adapted to dampen a capacitive network. The capacitive network has at least one capacitor positioned external to the interposer.

Abstract: There is provided a technology enabling the improvement of the reliability of a semiconductor device manufactured by physically fixing separately formed chip mounting portion and lead frame. A feature of an embodiment resides in that, a second junction portion formed in a suspension lead is fitted into a first junction portion formed in a chip mounting portion, thereby to physically fix the chip mounting portion and the suspension lead. Specifically, the first junction portion is formed of a concave part disposed in the surface of the chip mounting portion. The second junction portion forms a part of the suspension lead.

Abstract: An integrated circuit packaging system, and a method of manufacture therefor, including: electrical terminals; circuitry protective material around the electrical terminals and formed to have recessed pad volumes; routable circuitry on the top surface of the circuitry protective material; and an integrated circuit die electrically connected to the electrical terminals.

Abstract: A semiconductor package includes a baseplate having a die attach region and a peripheral region, a transistor die having a first terminal attached to the die attach region, and a second terminal and a third terminal facing away from the baseplate, and a frame including an electrically insulative member having a first side attached to the peripheral region of the baseplate, a second side facing away from the baseplate, a first metallization at the first side of the insulative member and a second metallization at the second side of the insulative member. The insulative member extends outward beyond a lateral sidewall of the baseplate. The first metallization is attached to the part of the first side which extends outward beyond the lateral sidewall of the baseplate. The first and second metallizations are electrically connected at a region of the insulative member spaced apart from the lateral sidewall of the baseplate.

Abstract: In one embodiment, a method of forming a multi-die semiconductor device is provided. A plurality of dice is mounted on a semiconductor substrate, and neighboring ones of the dice are separated by a distance at which a first one of the neighboring dice will contact a meniscus of a flange of the neighboring die during underfill to form a capillary bridge between the neighboring dice. Solder bumps are reflowed to electrically connect contact terminals of the plurality of dice to contact terminals on a top surface of the substrate. Underfill is deposited along one or more edges of one or more of the plurality of dice. As a result of the capillary bridge formed between neighboring dice, flow of underfill is induced between the bottom surfaces of the neighboring dice and the top surface of the substrate. The dispensed underfill is cured.

Abstract: A method of assembling a semiconductor device includes providing a lead frame having a die pad and a fame member with lead fingers that surround the die pad. The lead fingers have distal ends connected to the frame member and proximal ends near the die pad. A die is attached to the die pad and die connection pads are electrically connected to the proximal ends of the lead fingers with bond wires. The die, bond wires, and part of the lead fingers are encapsulated with an encapsulant. The encapsulating process includes separating the lead fingers into first and second sets of lead fingers. The proximal ends of the first set lie in a first plane and the proximal ends of the second set lie in a second plane that is spaced and maintained from the first plane solely by the encapsulation material.

Abstract: A packaged power semiconductor device is provided with voltage isolation between a metal backside and terminals of the device. The packaged power semiconductor device is arranged in an encapsulant defining a hole for receiving a structure for physically coupling the device to an object. A direct-bonded copper (“DBC”) substrate is used to provide electrical isolation and improved thermal transfer from the device to a heatsink. At least one power semiconductor die is mounted to a first metal layer of the DBC substrate. The first metal layer spreads heat generated by the semiconductor die. In one embodiment, the packaged power semiconductor device conforms to a TO-247 outline and is capable of receiving a screw for physically coupling the device to a heatsink.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a routable distribution layer on a leadframe; mounting an integrated circuit over the routable distribution layer; encapsulating with an encapsulation over the routable distribution layer; peeling the leadframe away from the routable distribution layer with a bottom distribution side of the routable distribution layer exposed from the encapsulation; and mounting an external interconnect on the routable distribution layer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having a mounting region; applying a mounting structure in the mounting region; mounting an integrated circuit die on the mounting structure; forming an encapsulation on the integrated circuit die and having an encapsulation cavity, the encapsulation cavity shaped by the mounting structure; forming a lead having a lead protrusion from the leadframe, the lead protrusion below a horizontal plane of the integrated circuit die; and removing the mounting structure for exposing the integrated circuit die.