Abstract: A method of fabricating a semiconductor device characterized in that the method includes the steps of forming basic structures of unit FETs on each of ‘m’ active layer regions more than the number of designed unit FETs and determining the number ‘n’ of desired basic structures on the basis of a drain current value of the semiconductor device predicted from a measured value of the drain current characteristics of one of the basic structures. The contact holes for electrical connections to electrodes of each of the unit FETs are formed for only the regions on ‘n’ basic structures in an inter-layer insulating film. In this manner, there is provided a method of fabricating a semiconductor device, the method being capable of improving degraded characteristics after the characteristics of TEG-FET have been measured.

Abstract: A non-volatile memory device comprises a gate line that includes a gate dielectric layer, a bottom gate pattern, an inter-gate dielectric and a top gate pattern, which are sequentially stacked. The width of the inter-gate dielectric is narrower than that of the bottom gate pattern.

Abstract: A semiconductor device that includes a semiconductor substrate including a memory cell region and a dummy cell region, a plurality of substantially parallel bit lines in the semiconductor substrate, a plurality of memory cell gate dielectrics provided over the bit lines in the memory cell region, the memory cell gate dielectrics comprising an oxide-nitrideoxide (ONO) layer, a plurality of dummy cell gate dielectrics provided over the plurality of bit lines in the dummy cell region, wherein the dummy cell gate dielectrics is non-trapping for electric charges, and a plurality of substantially parallel word lines over the memory cell gate dielectrics and the dummy cell gate dielectrics.

Abstract: A wafer bumping method comprising the following steps of. A wafer having fields is provided. The wafer having at least one wafer identification character formed thereon within one or more of the fields. A dry film resist is formed over the wafer. Portions of the dry film resist are selectively exposed field by field using a mask whereby the mask is shifted over the one or more fields containing the at least one wafer identification character so that the one or more fields containing the at least one wafer identification character is double exposed after the mask shift so that all of the one or more fields containing the at least one wafer identification character is completely exposed. The selectively exposed dry film resist is developed to remove the non-exposed portions of the dry film resist.

Abstract: In a Bi-CMOS ESD protection device, dual voltage capabilities are achieved by providing two laterally spaced p-regions in a n-material and defining a n+ region and a p+ region in each of the p-regions to define I-V characteristics that are similar to those defined by a SCR device in a positive direction, but, in this case, having those characteristics in both directions. The device may be asymmetrical to accommodate different voltage amplitudes in the positive and negative directions.

Abstract: A photomask designing method and apparatus, a computer readable storing medium, a photomask, a photoresist, a photosensitive resin, a base plate, a microlens, and an optical element. In the method, even though a desired depth of a photoresist pattern and a type of the photoresist are changed, the photomask can be easily designed. In a method of designing a photomask in which intensity of light radiated onto the photoresist is controlled with a fine pattern, that is, a congregation of fine areas respectively having predetermined light transmission factor, the resist sensitivity curve showing resist depth for the exposing amount of the employed photoresist and fine areas data corresponding to plural light transmission factors per predetermined halftone are previously set, and then, the depth of the resist respectively set per each of the fine areas is converted to the light exposing amount by use of the resist sensitivity curve.

Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Abstract: A semiconductor device comprises a plurality of gate lines composed of line shapes to function as gate electrodes in a plurality of transistors and separated from a substrate by a gate insulating layer, each having an upper metal silicide layer; and a plurality of source/drain regions formed on the substrate between said gate lines solely by carrying out impurity implantation processes.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: A method for designing an input output cell of an integrated circuit. The input output cell has a required area, a width, and a height. The bonding pad pitch length between adjacent bonding pads of the integrated circuit is measured. The width of the input output cell is specified to be substantially equal to the bonding pad pitch length. The required area is divided by the width to determine a first value, and the height of the input output cell is specified to be substantially equal to the first value. In this manner, the width of the input output cells is no greater than the distance between two adjacent bonding pads, and thus the input output cells can be placed very close together, facilitating their use in input output limited integrated circuit designs. However, the height of the input output cells is no greater than is necessary to enclose the required area of the input output cell, thus facilitating their use in core limited integrated circuit designs.

Abstract: A polymer or organic light emitting display may be formed on a substrate by patterning the light emitting material using a screen printing technique. In this way, displays may be formed economically, overcoming the difficulties associated with photoprocessing light emitting materials. A binary optic material may be selectively incorporated into sol gel coatings coated over light emitting elements formed from the light emitting material. A tricolor display may be produced using a light emitting material that produces a single color.

Abstract: A semiconductor integrated circuit is provided, which comprises a first cell comprising a plurality of transistors, a second cell comprising a PMOS transistor section and an NMOS transistor section, the PMOS transistor section comprising a first PMOS transistor and a second PMOS transistor connected to the first PMOS transistor in series, the NMOS transistor section comprising a first NMOS transistor and a second NMOS transistor connected to the first NMOS transistor in series. A predetermined scheme is used to connect between the first cell and the second cell, between the plurality of transistors in the first cell, and between the PMOS transistor section and the NMOS transistor section in the second cell.

Abstract: Disclosed herein are a semiconductor device and a method of manufacturing the same that increases the reliability of these devices as size design limitations decrease. Generally, a first insulating film, and wiring, including conductive film patterns and second insulating film patterns are formed on a substrate. Third insulating film patterns including a silicon-oxide-based material are formed on sidewalls of the wiring, and contact patterns and spacers on the sidewalls thereof for defining contact hole regions are formed on the wiring. The contact holes contact surfaces of the third insulating film patterns and pass through the first insulating film. Thus, the thickness of a second insulating film pattern used in the wiring can be minimized, thereby increasing a gap-fill margin between the wiring. A parasitic capacitance between the wiring can be reduced because silicon oxide spacers with a low dielectric constant are formed on sidewalls of the wiring.

Abstract: The present invention discloses a TFT array substrate that is fabricated using a four-mask process and a method of manufacturing that TFT array substrate. The gate line and gate electrode of the array substrate is surrounded by the metallic oxide after finishing a first mask process using thermal treatment. As a result, the gate line and gate electrode are not eroded and damaged by the etchant and stripper during a fourth mask process. Further, buffering layer can optionally be formed between the substrate and the gate line and gate electrode. Thus, silicon ions and oxygen ions included in the substrate are not diffused into the gate line and electrode. Accordingly, the line defect such as a line open of the gate line and gate electrode is prevented, thereby preventing inferior goods while increasing the manufacturing yield.

Abstract: An electronic representation of the electronic design is received which includes various connections between various blocks specifying functions performed within the electronic design. Each of the connections forms part of one or more paths through at least a portion of the electronic design. Each path has an associated timing constraint. The method assigns criticality values to at least one of the connections. These criticality values are based upon a slack ratio that is a function of the timing constraints and values of slack for paths on which the connections reside. The electronic representation may be revised in a manner that biases the representation toward a state in which connections having relatively high criticality are not changed in a manner which increases the delay in those connections or are changed in a manner that reduces delay.

Abstract: The object of the present invention is to provide a new nonvolatile semiconductor memory device and its manufacturing method for the purpose of miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and boosting the yield. In a memory cell according to the present invention, a floating gate's two end faces perpendicular to a word line and channel are partly placed over the top of a third gate via a dielectric film. The present invention can reduce the memory cell area of a nonvolatile semiconductor memory device, increase the operating speed, and enhances the yield.

Abstract: A semiconductor device having a multilayer structure and a method of manufacturing the semiconductor device are disclosed. The semiconductor device according to the present invention has a semiconductor element including pad electrodes formed on the electrode area thereof, a first insulation layer formed on the circuit formation area of the semiconductor element, and a first circuit pattern formed on said first insulation layer. The first circuit pattern electrically connected to the pad electrodes. The semiconductor device of the present invention further has a second insulation layer formed on the first circuit pattern including a first through hole for exposing the first circuit pattern, and a second circuit pattern formed on the second insulation layer. The second circuit pattern is electrically connected to the pad electrodes and has a second through hole for exposing the first circuit pattern.

Abstract: The present invention relates to an improved memory circuit with a divided bit-line, shared sense amplifier architecture. In a conventional divided bit-line, shared sense amplifier configuration, two adjacent memory sub-arrays are generally located between two banks of sense amplifiers and selected bit lines of the two adjacent memory sub-arrays are generally connected to metal lines with metal contacts to reduce capacitive loading. Under the present invention, some sense amplifiers from either banks of sense amplifiers are repositioned to the area between the two adjacent memory sub-arrays thereby permitting the repositioned sense amplifiers to be shared. As a result, any two adjacent memory sub-arrays share a bank of sense amplifiers. Furthermore, selected bit lines from the two adjacent memory sub-arrays are coupled to metal lines within the repositioned sense amplifiers.

Abstract: In a semiconductor device in which a wiring layer having an area which overlaps a connecting position and a wiring layer having an area which does not overlap the connecting position exist, if the wiring layer having the area which overlaps the connecting position is formed by connecting exposure, a pattern is formed in consideration of an alignment margin. Therefore, it is not advantageous in terms of a wiring width and a space between the wirings as compared with those in the case of forming the wiring layer by a batch processing of exposure. In a manufacturing method of a semiconductor device having a plurality of wiring layers, a first wiring layer is formed as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing them, and a second wiring layer is formed, as a pattern, by the batch processing of exposure.

Abstract: A MOS device with first and second freestanding semiconductor bodies formed on a substrate. The first freestanding semiconductor body has a first portion thereof disposed at a non-orthogonal, non parallel orientation with respect to a first portion of the second freestanding semiconductor body. These portions of said first and second freestanding semiconductor bodies have respective first and second crystalline orientations. A first gate electrode crosses over at least part of said first portion of said first freestanding semiconductor body at a non-orthogonal angle, as does a second gate electrode over the first portion of the second freestanding semiconductor body.

Abstract: Methods and systems are provided for forming an electrical interconnect layer between two layers of an integrated circuit. The interconnect layer is formed using a material having a first electrical conductivity corresponding to a first state and a second electrical conductivity corresponding to a second state, where the first electrical conductivity is different from the second electrical conductivity. An area of the material of the interconnect layer may be selected, for example, using a mask. Then energy may be applied to the selected area to change the electrical conductivity of the material in the selected area of the interconnect layer. Thus, the present invention may be used to implement optical memory devices which may be read by an electrical circuit.

Abstract: An integrated circuit having signal traces, power traces, and ground traces. The signal traces are disposed on at least one signal distribution layer, and the signal traces on the at least one signal distribution layer are formed at no more than a first thickness. The power traces and ground traces are formed on at least one power ground distribution layer, where the at least one power ground distribution layer is an overlying layer of the integrated circuit relative to the at least one signal distribution layer. The power traces and ground traces on the at least one power ground distribution layer are formed at no less than a second thickness that is greater than the first thickness of the signal traces. In this manner, the signal traces, which can be formed with a relatively thin thickness, can be placed very close together on the signal distribution layers, and have sufficient conductivity for the signals transmitted thereon.

Abstract: The antifuse device comprises an insulating layer positioned in the trench, a conductive member positioned above the insulating layer, at least a portion of the conductive member being positioned within the trench, the conductive member adapted to have at least one programming voltage applied thereto, and at least one doped active region formed in the substrate adjacent the trench. The antifuse further comprises at least one conductive contact coupled to the conductive member, and at least one conductive contact coupled to the doped active region.

Abstract: A semiconductor chip package includes a semiconductor chip mounted on a top surface of a substrate. A bottom surface of the substrate has ball pads. Bonding pads of the chip are electrically connected to the substrate. Enhanced pads, each having one or more dummy patterns coupled to one or more dummy pads, are preferably formed near edges of the substrate. The semiconductor chip package is mounted on the board by attaching external connection terminals such as solder balls, formed on the ball pads and the dummy pads, to a solder paste coated on ball lands and enhanced lands of the board.

Abstract: A semiconductor integrated circuit device has: a semiconductor substrate defining a plurality of rows, each row including areas for a sequence of cells; a plurality of active regions disposed in each of the rows constituting semiconductor elements of associated cells; and a wiring region of stripe shape elongated along a direction of row, defined on the semiconductor substrate outside of the active regions in each row, and including wirings belonging to the associated cells, each wiring region having height in a direction crossing the row direction, the wiring region having locally different height.

Abstract: Methods for generating a padring layout design are described. These methods utilize automation while still allowing customization. Automation is emphasized as much as possible so that more time can be used to solve the various problems that make each padring layout design unique. A framework in which regular patterns can be described, replicated, and tailored is provided. The padring is broken down into zones in which slots having bumps/bond pads areas, I/O cell areas, and/or edge logic cell areas are laid out in a regular pattern through an instantiation process. Edge logic, which is comprised of standard cells, is pulled from the core of the chip because these cells couple directly to I/O cells and are critical for timing.

Abstract: A multi-bit split-gate (MSG) flash cell with multi-shared source/drain, a method of making and a method of programming the same are disclosed. Furthermore, a method of bit-by-bit erasing, in addition to page erasing, of a plurality of cells of two or more is disclosed through the application of a positive voltage forced onto the control gate of the unselected cell. Thus, by providing the bit-by-bit erasing flexibility, the bit alterability is enhanced. The MSG is formed with N+1 stacked gates comprising floating gates and control gates, separated by N select gates, all sharing the same source/drain between a pair of bit lines. The programming, that is, writing of the plurality of N+1 bits is accomplished also bit by bit where the programmed bits are selected by word line, bit line and control gate. The read operation is similar to the write operation.

Abstract: A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.

Abstract: In placement of 6-bit interconnection lines in parallel, for example, interconnection lines for three lower-order bits having a high signal change frequency and interconnection lines for three higher-order bits having a low signal change frequency are placed alternately, so that each interconnection line for a lower-order bit is sandwiched by interconnection lines for higher-order bits. With this layout, the interconnection lines for higher-order bits serve like shield lines for the interconnection lines for lower-order bits. This effectively suppresses increase in delay in signal propagation due to change of a signal propagating through an interconnection line for a lower-order bit and a signal propagating through an interconnection line for a higher-order bit to opposite phases, without increasing the area.

Abstract: In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circuit component to select one of the first bus and the second bus when transmitting a signal from one of the circuit components to another. The second bus has a size larger than a size of the first bus.

Abstract: A mask read-only-memory structure and its method of manufacture are provided. The structure includes a substrate, a buried bit line in the substrate and a patterned stack layer covering a portion of the upper surface of the substrate. The stack layer includes a first dielectric layer, a stopping layer and a second dielectric layer. A gate oxide layer covers a portion of the upper surface of the substrate. A word line runs across the buried bit line to form a plurality of coding cells. The memory cells having a stack layer thereon are at a logic state “0” while the memory cells having a gate oxide layer thereon are at a logic state “1”.

Abstract: A semiconductor device has a via-contact, a main wire having an end connected to the via-contact, and an extension extended in line with the main wire from the end of the main wire beyond the via-contact, the width of the extension being equal to or narrower than the width of the main wire. The extension prevents the end of the main wire from being rounded by an optical proximity effect, eliminates a contact defect or an open defect between the via-contact and the end of the main wire, and involves no widening of the main wire around the via-ntact, so that other via-contacts may be arranged in the vicinity of the via-contact in question without violating design rules.

Abstract: A method for fabricating an UV-programmed P-type Mask ROM is described. The threshold voltages of all memory cells are raised at first to make each memory cell be in a first logic state, in which the channel is hard to switch on, in order to prevent a leakage current. After the bit lines and the word lines are formed, the Mask ROM is programmed by irradiating the substrate with UV light to inject electrons into the ONO layer under the openings to make the memory cells under the openings be in a second logic state.

Abstract: The present invention relates to metal interconnections for bit lines having a low resistance and an advanced morphology and a method of forming the same including: forming an inter-layer insulation film on a semiconductor substrate, the inter-layer insulation film containing a contact hole for the bit line; forming a plug within the contact hole; forming a barrier metal defined on the plug; and forming a bit line on the inter-layer insulation film.

Abstract: A thin film semiconductor die circuit package is provided utilizing low dielectric constant (k) polymer material for the insulating layers of the metal interconnect structure. Five embodiments include utilizing glass, glass-metal composite, and glass/glass sandwiched substrates. The substrates form the base for mounting semiconductor dies and fabricating the thin film interconnect structure.

Abstract: In a method of manufacturing a semiconductor device comprising: having a first wiring extending in a first direction; and a second wiring connected to the first wiring through a connection and extending in a second direction orthogonal to the first direction, the second wiring having a surplus portion projecting from the connection in a direction opposite to the second direction, the first and second wirings are arranged such that a center of the connection is offset in the second direction from a center of the first wiring, and a projecting portion of the first wiring is disposed under the connection.

Abstract: A surface geometry for a MOS-gated device is provided that allows device size to be varied in both the x-axis and the y-axis by predetermined increments. The actual device size is set or “programmed” by the metal and pad masks or the contact metal and pad masks. This approach saves both time and expense, since only new contact, metal and pad masks, or new metal and pad mask are required for each new device. Wafers may also be manufactured and stored at an inventory location prior to contact or metal mask, significantly reducing the time required to manufacture new devices. It is also be possible to qualify a family of devices made using this approach without qualifying each device. In addition, the location of the source or the source and gate bonding pads may be easily moved for assembly in a new package or for a new application.

Abstract: A flip-chip package and packaging method use a substrate having bond pad spacing that matches terminal spacing on a chip at an elevated temperature, such as the temperature of the chip during bonding to the substrate, the melting point of solder used on the chip, a temperature within the range of thermal cycling of the chip, or an operating temperature of the chip. Matching spacing at an elevated temperature permits a better alignment at the bonding temperature for formation of stronger bonds.

Abstract: Pads are arranged as an integrated circuit (IC) footprint, and are formed in a stackup that includes an insulating layer and multiple signal routing layers. The footprint has a polygonal shape. There is an inner pad region, a middle pad region that surrounds the inner pad region, and an outer pad region that surrounds the middle pad region. Some of the pads of each pad region are connected to a respective group of signal lines. Some of the signals that are connected to pads of the outer region which are located in a corner of the polygonal shape are routed out of the footprint in a different layer than the one used to route signal lines that are connected to pads of the outer region which are located between two adjacent corners of the polygonal shape.

Abstract: One embodiment of the present invention provides a system that electronically aligns pads on different semiconductor chips to facilitate communication between the semiconductor chips through capacitive coupling. The system operates by measuring an alignment between a first chip and a second chip, wherein the first chip is situated face-to-face with the second chip so that transmitter pads on the first chip are capacitively coupled with receiver pads on the second chip. Next, the system uses the measured alignment to associate transmitter pads on the first chip with proximate receiver pads on the second chip. The system then selectively routes data signals to transmitter pads on the first chip so that the data signals are communicated through capacitive coupling to intended receiver pads in the second chip that are proximate to the transmitter pads.

Abstract: A compact SRAM cell that incorporates refractory metal-silicon-nitrogen resistive elements as its pull-up transistors is described which includes a semi-conducting substrate, a pair of NMOS transfer devices formed vertically on the sidewalls of an etched substrate by a metal conductor providing electrical communication between an n+ region in the substrate and a bitline on top, a pair of pull-down nMOS devices on the substrate connected to ground interconnects, and a pair of vertical high-resistive elements formed of a refractory metal-silicon-nitrogen and function as a load for connecting to Vdd. The invention further describes a method for fabricating such compact SRAM cell.

Abstract: A folded bit line DRAM device is provided. The folded bit line DRAM device includes an array of memory cells. Each memory cell in the array of memory cells includes a pillar extending outwardly from a semiconductor substrate. Each pillar includes a single crystalline first contact layer and a single crystalline second contact layer separated by an oxide layer. A single crystalline vertical transistor is formed along alternating sides of the pillar within a row of pillars. The single crystalline vertical transistor includes an ultra thin single crystalline vertical first source/drain region coupled to the first contact layer, an ultra thin single crystalline vertical second source/drain region coupled to the second contact layer, and an ultra thin single crystalline vertical body region which opposes the oxide layer and couples the first and the second source/drain regions.

Abstract: A semiconductor package includes a semiconductor chip having a major surface and first pads formed on the major surface. The semiconductor package also includes a package substrate having (a) opposite first and second major surfaces, (b) a side surface extending between the first and second major surfaces, (c) a pad forming region adjacent to and along the side surface, (d) second pads formed on the pad forming region, (e) external electrodes formed on the first major surface of the package substrate, wherein the second major surface of the package substrate is fixed to the major surface of the semiconductor chip, and wherein the external electrodes are electrically connected to the second pads. The semiconductor package further includes bonding wires electrically connecting the first pads to the second pads and a sealing material covering the bonding wires and first and second pads.

Abstract: The invention concerns integrated circuits in which a MACRO is embedded in a standard cell array. One level of metal is devoted exclusively to non-local interconnect, and a layer of polysilicon is devoted to local interconnect, thereby saving significant space.

Abstract: A memory cell, which is isolated from other memory cells by STI trenches, each includes an ONO layer structure between a gate electrode and a channel region formed in a semiconductor body. The gate electrode is a component of a strip-shaped word line. Source and drain regions are disposed between gate electrodes of adjacent memory cells. Source regions are provided with polysilicon layers, in the form of a strip, as common source lines. Drain regions are connected as bit lines through polysilicon fillings to metallic interconnects applied to the top face of the semiconductor body.

Abstract: A memory structure that includes a first electrode, a second electrode, a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode, a memory storage element disposed between the thermal conduction limiting electrode and the second electrode, and a control element disposed between the second electrode and the first electrode.

Abstract: A method of fabricating a mask read-only-memory (ROM). The method includes the steps of forming a first isolated layer on the substrate having a plurality of parallel bit lines. Next, a plurality of parallel trenches are formed on the first isolated layer to define a plurality of word lines. Then, a gate oxide layer and a polysilicon are formed on bottom of the trenches in sequence to form a plurality of parallel word lines. A second isolated layer is formed according to the topography of the substrate. The second isolated layer is etched using a plurality of parallel linear mask to form tunnel regions between the neighbored bit lines in the word lines. Finally, a coding process is programmed in selected tunnel regions using a hole patterned photoresist as a mask. According to this invention, two isolated layers are defined using the parallel linear patterned photoresist, they play as protection layers between neighbor cell regions. So that the critical dimension of photolithography is enlarged.

Abstract: An integrated memory circuit of the type of an NROM memory includes recessed bit lines formed of a material having a low ohmic resistance. By recessing the bit lines with respect to the semiconductor substrate surface of a peripheral controlling circuit for an array of memory cells allows to form the word line lithography on a perfect or almost perfect plane so that the word line formation results in a production with higher yield and, therefore, lower costs for the individual integrated memory circuit.

Abstract: An integrated circuit includes first and second diodes that are electrically connected to a conductive line in antiparallel, to dissipate both positive and negative charges on the conductive line during plasma processing. The integrated circuit also includes a fuse for disconnecting one of the first and second diodes from the conductive line after the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after the plasma processing. Accordingly, integrated circuits are fabricated by forming a conductive line on an integrated circuit substrate and first and second diodes in the integrated circuit substrate that are electrically connected to the conductive line in antiparallel. Then, plasma processing is performed on the integrated circuit substrate including the conductive line and the first and second diodes, such that the first and second diodes dissipate both positive and negative charges on the conductive line during the plasma processing.

Abstract: A method of forming conductive patterns comprises preparing layout data about macro cells, preparing data about layouts of top-layer conductive pattern metal cells and preparing data about conductive patterns between the macro cells, inputting to the macro cells and outputting from the macro cells. Then measurement-required points of the conductive patterns lying between the macro cells are specified. The top-layer conductive pattern metal cell is interposed in each of the measurement-required points. Finally, layouts of the macro cells and conductive patterns are determined so that layout data is created.