Abstract: An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a Schottky metal layer disposed over the substrate adjacent the gate electrode. The Schottky metal layer includes a Schottky contact electrically coupled to the channel which provides a Schottky junction and at least one alignment mark disposed over the semiconductor substrate. A method for fabricating the semiconductor device includes creating an isolation region that defines an active region along an upper surface of a semiconductor substrate, forming a gate electrode over the semiconductor substrate in the active region, and forming a Schottky metal layer over the semiconductor substrate. Forming the Schottky metal layer includes forming at least one Schottky contact electrically coupled to the channel and providing a Schottky junction, and forming an alignment mark in the isolation region.

Abstract: A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.

Abstract: A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.

Abstract: A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.

Abstract: A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process.

Abstract: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further includes a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.

Abstract: A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming spacers adjoining sidewalls of the gate stacks, wherein at least one of the spacers extends beyond an edge the isolation feature. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.

Abstract: The present invention discloses a manufacturing method of a junction field effect transistor (JFET). The manufacturing method includes: providing a substrate with a first conductive type, forming a channel region with a second conductive type, forming a field region with the first conductive type, forming a gate with the first conductive type, forming a source with the second conductive type, forming a drain with the second conductive type, and forming a lightly doped region with the second conductive type. The channel region is formed by an ion implantation process step, wherein the lightly doped region is formed by masking a predetermined region from accelerated ions of the ion implantation process step, and diffusing impurities with the second conductive type nearby the predetermined region into it with a thermal process step.

Abstract: A system and method for forming multi recessed shallow trench isolation structures on substrate of an integrated circuit is provided. An integrated circuit includes a substrate, at least two shallow trench isolation (STI) structures formed in the substrate, an oxide fill disposed in the at least two STI structures, and semiconductor devices disposed on the oxide fill in the at least two STI structures. A first STI structure is formed to a first depth and a second STI structure is formed to a second depth. The oxide fill fills the at least two STI structures, and the first depth and the second depth are based on semiconductor device characteristics of semiconductor devices disposed thereon.

Abstract: A method of manufacturing an isolation structure includes forming a laminate structure on a substrate. A plurality trenches is formed in the laminate structure. Subsequently a pre-processing is effected to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches. Spin-on-dielectric (SOD) materials are filled into the trenches. The hydrophilic think film having oxygen ions changes the surface tension of the inner wall of the trenches and increases SOD material fluidity.

Abstract: The device includes a wafer substrate including an isolation feature, a fin base embedded in the isolation feature, at least one channel disposed above the fin base, and a gate stack disposed around the channel, wherein the gate stack includes a top portion and a bottom portion of the gate stack formed by filling a cavity around the channel such that the top portion and bottom portion are aligned each other. The device further includes at least one source and one drain disposed over the fin base, wherein the channel connects the source and the drain. The device further includes the source and the drain disposed over a fin insulator disposed over the fin base.

Abstract: Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region.

Abstract: A method for designing a semiconductor device includes arranging at least a pattern of a first active region in which a first transistor is formed and a pattern of a second active region in which a second transistor is formed; arranging at least a pattern of a gate wire which intersects the first active region and the second active region; extracting at least a first region in which the first active region and the gate wire are overlapped with each other; arranging at least one pattern of a compressive stress film on a region including the first active region; and obtaining by a computer a layout pattern of the semiconductor device, when the at least one pattern of the compressive stress film is arranged, end portions of the at least one pattern thereof are positioned based on positions of end portions of the first region.

Abstract: A method for forming semiconductor contacts comprises forming a germanium fin structure over a silicon substrate, depositing a doped amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure and performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.

Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions, the first device including a first gate structure, first gate spacers disposed on sidewalls of the first gate structure, and first source and drain features. The semiconductor device further includes a second device disposed in a second device region of the plurality of device regions, the second device including a second gate structure, second gate spacers disposed on sidewalls of the second gate structure, and second source and drain features. The second and first source and drain features having a source and drain feature and a contact feature in common. The common contact feature being a self-aligned contact.

Abstract: A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate. The method includes planarizing a top surface of the conductive layer and forming a gate electrode by patterning the insulation layer and the conductive layer.

Abstract: A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.

Abstract: An integrated circuit fabrication apparatus is configured to fabricate an integrated circuit with at least one p-FinFET device and at least one n-FinFET device. A bonding control processor is configured to bond a first silicon layer having a first crystalline orientation to a second silicon layer having a second crystalline orientation that is different from the first crystalline orientation. A material growth processor is configured to form a volume of material extending through the first silicon layer from the second layer up to the surface of first layer. The material has a crystalline orientation that substantially matches the crystalline orientation of second layer. An etching processor is configured to selectively etch areas of the surface of the first layer that are outside of the region to create a first plurality of fins and areas inside the region to create a second plurality of fins.

Abstract: A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is disposed on the substrate and has an opening exposing the pad, wherein the dielectric stack layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer located between the first dielectric layer and the second dielectric layer, and there is a gap between the portion of the first dielectric layer surrounding the opening and the portion of the second dielectric layer surrounding the opening. The first plating layer is disposed at the dielectric stack layer. The second plating layer is disposed at the pad, wherein the gap isolates the first plating layer from the second plating layer.

Abstract: A method of filling shallow trenches is disclosed. The method includes: successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed in; etching the second oxide layer to form inner sidewalls with an etchant which has a high etching selectivity ratio of the second oxide layer to the first oxide layer; growing a high-quality pad oxide layer by thermal oxidation after the inner sidewalls are removed; and filling the trenches with an isolation dielectric material. By using this method, the risk of occurrence of junction spiking and electrical leakage during a subsequent process of forming a metal silicide can be reduced.

Abstract: A method for manufacturing a semiconductor apparatus includes the first step of forming a silicon oxide film including a main portion on a second portion and a sub portion between a first portion and a silicon nitride film, the second step of forming a first conductivity type impurity region under the silicon oxide film, and the third step of forming a semiconductor element including a second conductivity type impurity region having an opposite conductivity to the first conductivity type impurity region in the first portion. In the second step, angled ion implantation is performed into a region under the sub portion at an implantation angle using the silicon nitride film as a mask.

Abstract: A method for formation of a shallow trench isolation (STI) in an active region of a device comprising trench capacitive elements, the trench capacitive elements comprising a metal plate and a high-k dielectric includes etching a STI trench in the active region of the device, wherein the STI trench is directly adjacent to at least one of the metal plate or high-k dielectric of the trench capacitive elements; and forming an oxide liner in the STI trench, wherein the oxide liner is formed selectively to the metal plate or high-k dielectric, wherein forming the oxide liner is performed at a temperature of about 600° C. or less.

Abstract: A device isolation region is made of a silicon oxide film embedded in a trench, an upper portion thereof is protruded from a semiconductor substrate, and a sidewall insulating film made of silicon nitride or silicon oxynitride is formed on a sidewall of a portion of the device isolation region which is protruded from the semiconductor substrate. A gate insulating film of a MISFET is made of an Hf-containing insulating film containing hafnium, oxygen and an element for threshold reduction as main components, and a gate electrode that is a metal gate electrode extends on an active region, the sidewall insulating film and the device isolation region. The element for threshold reduction is a rare earth or Mg when the MISFET is an n-channel MISFET, and the element for threshold reduction is Al, Ti or Ta when the MISFET is a p-channel MISFET.

Abstract: A method of forming a semiconductor device includes the following steps. A semiconductor substrate having a first strained silicon layer is provided. Then, an insulating region such as a shallow trench isolation (STI) is formed, where a depth of the insulating region is substantially larger than a depth of the first strained silicon layer. Subsequently, the first strained silicon layer is removed, and a second strained silicon layer is formed to substitute the first strained silicon layer.

Abstract: Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors with a higher diode turn-on voltage. For example, one or more embodiments include a JFET with a PIN gate stack. One or more embodiments also relate to systems and devices in which the improved JFET may be employed, as well as methods of manufacturing the improved JFET.

Abstract: The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.

Abstract: A system and method for forming multi recessed shallow trench isolation structures on substrate of an integrated circuit is provided. An integrated circuit includes a substrate, at least two shallow trench isolation (STI) structures formed in the substrate, an oxide fill disposed in the at least two STI structures, and semiconductor devices disposed on the oxide fill in the at least two STI structures. A first STI structure is formed to a first depth and a second STI structure is formed to a second depth. The oxide fill fills the at least two STI structures, and the first depth and the second depth are based on semiconductor device characteristics of semiconductor devices disposed thereon.

Abstract: A device including a NEMS/MEMS machine(s) and associated electrical circuitry. The circuitry includes at least one transistor, preferably JFET, that is used to: (i) actuate the NEMS/MEMS machine; and/or (ii) receive feedback from the operation of the NEMS/MEMS machine The transistor (e.g., the JFET) and the NEMS/MEMS machine are monolithically integrated for enhanced signal transduction and signal processing. Monolithic integration is preferred to hybrid integration (e.g., integration using wire bonds, flip chip contact bonds or the like) due to reduce parasitics and mismatches. In one embodiment, the JFET is integrated directly into a MEMS machine, that is in the form of a SOI MEMS cantilever, to form an extra-tight integration between sensing and electronic integration. When a cantilever connected to the JFET is electrostatically actuated; its motion directly affects the current in the JFET through monolithically integrated conduction paths (e.g., traces, vias, etc.

Abstract: An electronic image sensor includes a semiconductor substrate having a first surface configured for accepting illumination to a pixel array disposed in the substrate. An electrically-doped channel region for each pixel is disposed at a second substrate surface opposite the first substrate surface. The channel regions are for collecting photogenerated charge in the substrate. An electrically-doped channel stop region is at the second substrate surface between each channel region. An electrically-doped shutter buried layer, disposed in the substrate at a depth from the second substrate surface that is greater than that of the pixel channel regions, extends across the pixel array. An electrically-doped photogenerated-charge-extinguishment layer, at the first substrate surface, extends across the pixel array.

Abstract: A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced ?VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The semiconductor structure includes an analog device and a digital device each having an epitaxial channel layer where a single gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the digital device and one of a double and triple gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the analog device.

Abstract: A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate. The method includes planarizing a top surface of the conductive layer and forming a gate electrode by patterning the insulation layer and the conductive layer.

Abstract: A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11, 13) with one or more device mesas (41) in which isolation regions (92, 93) are formed using an implant mask (81) to implant ions (91) into an upper portion of the mesa sidewalls and the peripheral region around each elevated surface of the mesa structures exposed by the implant mask, thereby preventing the subsequently formed gate electrode (111) from contacting the peripheral edge and sidewalls of the mesa structures.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.

Abstract: A semiconductor device and a method of manufacturing are provided. A dielectric layer is formed over a substrate, and a first silicon-containing layer, undoped, is formed over the dielectric layer. Atomic-layer doping is used to dope the undoped silicon-containing layer. A second silicon-containing layer is formed over first silicon-containing layer. The process may be expanded to include forming a PMOS and NMOS device on the same wafer. For example, the first silicon-containing layer may be thinned in the PMOS region prior to the atomic-layer doping. In the NMOS region, the doped portion of the first silicon-containing layer is removed such that the remaining portion of the first silicon-containing layer in the NMOS is undoped. Thereafter, another atomic-layer doping process may be used to dope the first silicon-containing layer in the NMOS region to a different conductivity type. A third silicon-containing layer may be formed doped to the respective conductivity type.

Abstract: A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.

Abstract: A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

Abstract: An integrated circuit is fabricated with at least one p-FinFET device and at least one n-FinFET device situated parallel to each other. A first silicon layer having a first crystalline orientation is bonded to a second silicon layer having a second crystalline orientation. The first and second orientations are different from each other. A volume of material is formed that extends through the first layer from the second layer up to the surface of the first layer. The material has a crystalline orientation that substantially matches the orientation of the second layer. Areas of the surface of the first layer that are outside of the region are selectively etched to create a first plurality of fins and areas inside the region to create a second plurality of fins. The etching leaves the first and second pluralities of fins parallel to each other with different surface crystal orientations.

Abstract: A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.

Abstract: Method of making a semiconductor device that includes forming a source and a drain in a substrate, forming a gate on the substrate between the source and drain, forming a substrate contact in electrical contact with the source, and forming an electrical contact to the source, drain and gate, and the substrate.

Abstract: Germanium field effect transistors and methods of fabricating them are described. In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer. The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer. A first electrode layer is deposited over the first dielectric layer.

Abstract: A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.

Abstract: A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.

Abstract: A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the first gate originates from an as-deposited material exhibiting a work function the same as exhibited in an as-deposited material from which the lower metal layer of the second gate originates. However, the first gate's lower metal layer exhibits a modified work function different from a work function exhibited by the second gate's lower metal layer. The first gate's lower metal layer may contain less oxygen and/or carbon in comparison to the second gate's lower metal layer. The first gate's lower metal layer may contain more nitrogen in comparison to the second gate's lower metal layer. The first gate may be a n-channel gate and the second gate may be a p-channel gate.

Abstract: A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.

Abstract: A method of forming a semiconductor device is provided, which may include, but is not limited to, the following processes. Grooves may be formed in an insulating region and in a semiconductor region, while forming burrs near the boundary between the insulating region and the semiconductor region. Protection films may be selectively formed on inside walls of the grooves except on bottom walls of the grooves. A selective thermal process may be carried out in the presence of the protection films, thereby removing the burrs.

Abstract: Semiconductor devices with an improved overlay margin and methods of manufacturing the same are provided. In one aspect, a method includes forming a buried bit line in a substrate; forming an isolation layer in the substrate to define an active region, the isolation layer being parallel to the bit line without overlapping the bit line; and forming a gate line including a gate pattern and a conductive line by forming the gate pattern in the active region and forming a conductive line that extends at a right angle to the bit line across the active region and is electrically connected to the gate pattern disposed thereunder. The gate pattern and the conductive line can be integrally formed.

Abstract: Transistors (21, 41) employing floating buried layers may be susceptible to noise coupling into the floating buried layers. In IGFETS this is reduced or eliminated by providing a normally-ON switch (80, 80?) coupling the buried layer (102, 142, 172, 202) and the IGFET source (22, 42) or drain (24, 44). When the transistor (71, 91) is OFF, this clamps the buried layer voltage and substantially prevents noise coupling thereto. When the drain-source voltage VDS exceeds the switch's (80, 80?) threshold voltage Vt, it turns OFF, allowing the buried layer (102, 142, 172, 202) to float, and thereby resume normal transistor action without degrading the breakdown voltage or ON-resistance. In a preferred embodiment, a normally-ON lateral JFET (801, 801?, 801-1, 801-2, 801-3) conveniently provides this switching function.

Abstract: A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.

Abstract: An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed to extend from the top surface into the substrate. The trench has sidewalls and a bottom surface. A silicon liner layer is formed on the sidewalls and the bottom surface. A flowable dielectric material is filled in the trench. An anneal process is performed to densify the flowable dielectric material and convert the silicon liner layer into a silicon oxide layer simultaneously.

Abstract: Structures and methods for integrating a thick oxide high-voltage metal-oxide-semiconductor (MOS) device into a thin oxide silicon-on-insulator (SOI). A method of forming a semiconductor structure includes forming first source and drain regions of a first device below a buried oxide layer of a silicon-on-insulator (SOI) wafer, forming a gate of the first device in a layer of semiconductor material above the buried oxide layer; and forming second source and drain regions of a second device in the layer of semiconductor material above the buried oxide layer.