Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

Abstract: A method of making a plurality of light emitting diodes simultaneously includes steps of: a) providing a wafer and a first bonding layer, and adhering the first bonding layer to a bottom side of the wafer; b) cutting the wafer to form a plurality of LED dies on the first bonding layer; c) adhering a second bonding layer on top sides of the plurality of LED dies; d) removing the first bonding layer; e) mounting the second bonding layer with the plurality of LED dies on a base having a plurality of recesses; f) removing the second bonding layer and letting the plurality of LED dies fall into the recesses of the base; g) electrically connecting the LED dies to electric poles in the base; h) encapsulating the LED dies; and i) cutting the base to form the plurality of LEDs.

Abstract: Discussed are a color electrophoretic display device with a color filter layer, which is formed in a droplet state on a rear surface of an electronic ink film through surface treatment so as to be capable of adjusting density of droplets in pixels and achieving correct alignment, and a method for manufacturing the same. The method includes forming a thin film transistor (TFT) array substrate including a display region, in which a plurality of pixel regions are defined in a matrix, and alignment keys provided at the outside of the display region, forming an electrophoretic layer including a micro capsule layer formed so as to correspond to the display region of the TFT array substrate, and forming a color filter layer on the electrophoretic layer using the alignment keys so as to correspond to the respective pixel regions of the display region.

Abstract: A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.

Abstract: Embodiments disclosed herein provide packaged LED devices in which the majority of the emitted light comes out the top of each LED chip with very little side emissions. Because light only comes out from the top, phosphor deposition and color temperature control can be significantly simplified. A package LED may include a housing positioned on a supporting submount, sized and dimensioned to accommodate a single LED chip or an array of LED chips. The LED chip(s) may be attached to the submount utilizing the Gold-to-Gold Interconnect (GGI) process or solder-based approaches. In some embodiments, phosphor may be deposited on top of the LED chip(s) or sandwiched between glass plates on top of the LED chip(s). The phosphor layer may be inside or on top of the housing and be secured to the housing utilizing an adhesive. The housing may be adhered to the submount utilizing a thermal epoxy.

Abstract: A light emitting diode (LED) lighting unit is provided. The LED lighting unit includes a printed circuit board having pairs of electrical terminals formed on one side thereof, a casing integrally formed on the one side of the printed circuit board by injection molding, and a plurality of LED chips. Each of the LED chips is electrically connected to each pair of electrical terminals, and the LED chips are exposed in the casing. The printed circuit board may be provided with a plurality of apertures for receiving molding material of the casing during injection molding. A method of manufacturing the LED lighting unit is also provided.

Abstract: A representative LED array includes: a base substrate (BS) and a plurality of light emitting diodes, each of the light emitting diodes comprising a stack of a first contact layer, a semiconductor stack and a second contact layer, the semiconductor stack being on top of the first contact layer, the second contact layer being on top of the semiconductor stack; the plurality of light emitting diodes being arranged in pixel matrix on the base substrate as LEDs of at least three types (R, G, B); the LEDs according to their type (R, G, B) being arranged as at least a first, second and third sub-pixel in the pixel matrix for emission of radiation of a respective specific at least first, second and third color; and interconnection circuitry on the substrate, operative to connect to the light emitting diodes of the array for addressing each of the light emitting diodes.

Abstract: A submount for an optoelectronic device includes a substrate, a first top pad on a top surface of the substrate, a first bottom pad on a bottom surface of the substrate and a first wrap-around contact in a sidewall recess of the substrate, in which the first wrap-around contact is coupled electrically to the first top pad and to the first bottom pad. Alternatively, or in addition, the submount includes a device mounting pad on the top surface of the substrate, a wire-bond pad on the top surface of the substrate, a contact pad on the bottom surface of the substrate and a feedthrough contact which extends through the substrate and electrically couples the wire-bond pad to the contact pad.

Abstract: The LED chip package of the present invention uses a semiconductor substrate as package substrate, which improves heat dissipation. Also, the LED chip package is incorporated with a planarization structure, which renders the LED chip and the substrate a substantially planar surface, thereby making formation of a planar patterned conductive layer possible. Accordingly, serial/parallel electrical connections between light emitting diode chips can be easily implemented by virtue of the planar patterned conductive layer.

Abstract: Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Abstract: A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another.

Abstract: An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.

Abstract: A thermally conductive structure of a light emitting diode (LED) includes a vapor chamber, an insulating layer, an electrically conductive layer and a plurality of LEDs. In the invention, the insulating layer is plated over a surface of the vapor chamber; the electrically conductive layer disposed on the insulating layer is electrically separated from the vapor chamber and has a first electrode and a second electrode; and the LEDs arranged on the insulating layer respectively have a first leg connected to the first electrode and a second leg connected to the second electrode; thereby, the invention has an excellent performance of thermal conduction and heat dissipation, which is capable of prolonging the lifespan of LED.

Abstract: The present invention relates to a white organic light emitting device and a method for manufacturing the same, in which a hole transport layer is made to have an energy level higher than an energy level of an excited state of a phosphorescent light emitting layer adjacent thereto for enhancing light emitting efficiency of the hole transport layer without an additional exciton blocking layer, and a dopant content in the phosphorescent light emitting layer is adjusted for preventing color shift from taking place.

Abstract: The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of the second mount for emitting light. The first light-emitting element and the second light-emitting element are placed so that the emission direction of light from the second light-emitting element is at an angle of depression with respect to the emission direction of light from the first light-emitting element and that the emission direction of light from the first light-emitting element and the emission direction of light from the second light-emitting element substantially coincide with each other as viewed from above the base.

Abstract: A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a planar top surface, a light-emitting diode (LED) chip disposed over the top surface of the semiconductor substrate, at least two isolated outer wiring layers formed through the semiconductor substrate and electrically connected to the light-emitting diode chip, serving as input terminals, a transparent encapsulating layer with a substantially planar top surface formed over the semiconductor substrate, capping the LED chip and the at least two isolated outer wiring layers, and a lens module adhered to the substantially planar top surface of the transparent encapsulating layer to cap the light-emitting diode chip. In one embodiment, the lens module includes a fluorescent layer and a lens covering or covered by the fluorescent layer.

Abstract: The present invention relates to a light-emitting device comprising at least one light-emitting diode, which emits light, and a housing arranged to receive at least a portion of said light. The housing comprises a translucent inorganic material and is provided with at least one recess, which comprises positioning and orientating means. The at least one light-emitting diode is arranged in the at least one recess and is positioned and orientated by said positioning and orientating means, and a translucent inorganic contact layer material is arranged between the at least one light-emitting diode and the housing in the at least one recess to receive at least portion of the light and to connect said light-emitting diode to said housing.

Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: A method of producing a lamp, including: mounting light emitting junctions in respective receptacles; mounting the receptacles on a curved support structure so as to form a three-dimensional array; and placing the light emitting junctions in electrical connection with the support structure.

Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.

Abstract: A light output device comprises a substrate arrangement comprising first and second light transmissive substrates (1,2) and an electrode arrangement (3a,3b) sandwiched between the substrates. A plurality of light source devices (4) are integrated into the structure of the substrate arrangement and connected to the electrode arrangement. The electrode arrangement comprises an at least semi-transparent conductor arrangement of spaced non-transparent wires, the wires comprising a conductive ink.

Abstract: Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.

Abstract: The light emitting diode package of the present invention uses photosensitive materials to form phosphor encapsulations or a phosphor layer, which can be fabricated by means of semiconductor processes in batch. Also, the concentration of phosphors in individual regions can be accurately and easily controlled by a laser printing process or by light-through holes. Accordingly, the optic effects of light emitting diode packages can be accurately adjusted.

Abstract: A light emitting apparatus can have a front luminous intensity distribution having a sharp difference at the interface between the light emitting area and the surrounding non-light emitting area (outer environment) so as to suppress or prevent light color unevenness. The semiconductor light emitting apparatus can include a substrate, a plurality of light emitting elements each having a top surface as a light emitting surface and disposed on the substrate with a predetermined gap between the adjacent light emitting elements, bridge portions each disposed at the gap between the adjacent light emitting elements so as to connect the light emitting elements, and a wavelength conversion layer disposed over the top surfaces of the plurality of the light emitting elements and the bridge portions entirely. The wavelength conversion layer can have a decreased thickness at least around its peripheral area and gradually tapering to its end portion.

Abstract: A catheter with many fiber optic pressure sensors. The sensor diaphragm is formed from a wafer with a thin silicon layer and a silicon substrate layer separated by a silicon dioxide layer. A method includes masking and etching channels through the silicon substrate layer in a pattern of concentric circles to form a concentric circular etched channels and cylindrical unetched portions of the silicon substrate layer between the channels, exposing the silicon dioxide in the etched regions, and dissolving the exposed silicon dioxide to expose the crystalline silicon layer in the etched regions. The unetched cylindrical portion of the silicon substrate forms the diaphragm support element and the thin silicon layer forms the diaphragm. After applying a reflective coating to the exposed thin silicon layer, the support element face is adhered to the end face of a tubular housing, and a fiber optic probe is inserted in the tubular housing.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.

Abstract: In a method of manufacturing an optical device, a whole substrate is first prepared which has a plurality of regions corresponding to substrates constituting a plurality of optical devices, respectively. A plurality of chips are then mounted to the plurality of regions, respectively. A whole sealing member having a plurality of sealing members is integrally attached to the whole substrate to form an intermediate body. The intermediate body is divided into the above-described regions. Thus, the optical device having a substrate, a chip as an optical element mounted to the substrate and a sealing member with transparency provided at the substrate for the purpose of sealing the chip is manufactured. This manufacturing method improves the efficiency of manufacturing an optical device.

Abstract: There is provided a method for the production of diode laser bars from a wafer, wherein a metal layer is applied to the wafer in such a way that it does not extend up to the later facets of the diode laser bars to be separated, the diode laser bars are separated and stacked one atop another, the metal layer producing a gap between the facets of the stacked diode laser bars and the metal layer being selected in such a way that clogging of the gap during coating of a facet is prevented.

Abstract: An organic electroluminescence device includes a substrate; first electrodes arranged on the luminous portion of the substrate in a single direction; an insulating layer pattern formed on the first electrodes and the substrate in a lattice shape to define plural pixel openings on the first electrodes; partition layers formed on the insulating layer pattern, the partition layers intersecting the first electrodes perpendicularly; organic thin film layer formed on the pixel openings; second electrodes formed on the organic thin film layer to be perpendicular to the first electrodes; first bus electrode patterns formed on the pad portion of the substrate to be connected with the first electrodes; second bus electrode patterns formed on the pad portion of the substrate to be connected with the second electrodes and including a material for forming the second electrodes; and barrier films formed between the second bus electrode patterns.

Abstract: An organic light emitting display device capable of hermetically sealing a space between a deposition substrate and an encapsulation substrate with inorganic sealing materials is disclosed. One embodiment of the organic light emitting display device includes a first substrate including power supply lines formed on an array, and a circumference of the array, of an organic light emitting diode, and connected to a pad unit through the power pad line to supply a power source to each of the organic light emitting diodes; a second substrate arranged on at least the array of the first substrate; and an inorganic sealing material for sealing an inner space between the first substrate and the second substrate while forming a closed boundary, wherein the inorganic sealing material is not overlapped with a region in which the power supply line is formed.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane.

Abstract: A method of making a white LED package structure having a silicon substrate comprises providing a silicon substrate and performing an etching process to form a plurality of cup-structures on a top surface of the silicon substrate. Next, a reflective layer on the top surface of the silicon substrate is formed, and a transparent insulating layer on the reflective layer is formed. Subsequently, a plurality of blue LEDs are respectively bonded in each cup-structure, wherein the blue LEDs have various wavelengths. Last, a plurality of kinds of phosphor powders corresponding to the wavelengths of the blue LEDs are mixed with each other and added to a sealing material, and a sealing process is performed to form a phosphor structure on the cup-structures.

Abstract: The invention is directed to providing a smaller semiconductor device with a lower manufacturing cost and higher reliability and a method of manufacturing the same. A light emitting element (a LED die 8) is formed on a first substrate 1. A cathode electrode 10 connected to an N type region of the LED die 8 is formed between the first substrate 1 and the LED die 8. The side surface of the LED die 8 is covered by an insulation layer 11. An anode electrode 12 is formed extending from on the front surface of the first substrate 1 onto a P type region of the LED die 8 along the circumference of the insulation layer 11. Wiring layers 18 electrically connected to the cathode electrode 10 and the anode electrode 12 are formed on the side surface of the first substrate 1 therealong. The wiring layers 18 extend onto the back surface of the first substrate 1.

Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

Abstract: Provided is an LED package including a metal substrate that has one or more via holes formed therein; an insulating layer that is formed on a surface of the metal substrate including inner surfaces of the via holes; a plurality of metal patterns that are formed on the insulating layer and are electrically isolated from one another; and an LED chip that is mounted on a metal pattern among the plurality of metal patterns.

Abstract: Light emitting diode (LED) structures are fabricated in wafer scale by mounting singulated LED dies on a carrier wafer or a stretch film, separating the LED dies to create spaces between the LED dies, applying a reflective coating over the LED dies and in the spaces between the LED dies, and separating or breaking the reflective coating in the spaces between the LED dies such that some reflective coating remains on the lateral sides of the LED die. Portions of the reflective coating on the lateral sides of the LED dies may help to control edge emission.

Abstract: A method of packing electronic devices and an apparatus thereof are disclosed herein. The method allows for usage of solder materials with a melting temperature of 180° C. or higher, such as from 210° C. to 300° C., and from 230° C. to 260° C., so as to provide reliable and robust packaging. This method is particularly useful for packaging electronic devices that are sensitive to temperatures, such as microstructures, which can be microelectromechanical devices (MEMS), such as micromirror array devices.

Abstract: A method of making LEDs simultaneously includes steps of : a) providing a wafer having LED dies on a substrate; b) forming a passivation layer on the LED dies; c) forming an electrode layer on the passivation layer and the LED dies; d) assembling a conducting board on the electrode layer; e) removing the substrate to expose a light emitting surface of each LED die; f) forming a terminal on the light emitting surface; g) forming a channel at a lateral side of each LED die; h) assembling a cover onto the LED dies; i) wire bonding and encapsulating the LED dies to the LEDs connected with each other; and j) cutting through the interconnected LEDs to form the LEDs separated from each other.

Abstract: A sapphire growth substrate wafer has epitaxially grown over it N-type layers, an active layer, and P-type layers to form GaN LEDs. Each LED is a flip-chip with its cathode contact and anode contact formed on the same side. The wafer is then diced to separate out the LEDs. A P-type silicon submount wafer has N-type doped interconnect regions for interconnecting all the cathode contacts together after the LEDs are mounted on the submount wafer. The sapphire substrate is then removed by a laser lift-off process. A bias voltage is then applied to the cathode contacts via the interconnect regions to bias the N-type layers for a photo-electrochemical etching process that roughens the exposed layer for increased light extraction. The submount wafer is then diced, cutting through the doped interconnect regions.

Abstract: A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.

Abstract: An AC LED device and method for fabricating the same are disclosed. An exemplary embodiment of the AC LED device includes at least two separate AC LED unit chips, wherein each of the AC LED unit chip includes a substrate having a first light emitting module and a second light emitting module. Each of the first and second light emitting modules includes a plurality of light emitting micro diodes connected between a first conductive electrode and a second conductive electrode, wherein the amount of light emitting micro diodes emitting light during a positive half cycle of an AC charge is equal to that during a negative half cycle of an AC charge. A plurality of conductive wires is respectively and electrically connected to the separate AC LED unit chips without passive devices.

Abstract: Provided is a method of manufacturing an optical semiconductor device, the method including: providing a resin layer on a light-emitting substrate to cover a principle surface of the light-emitting substrate, the light-emitting substrate including a pair of electrodes in each section of the principle surface, the resin layer including multiple holes each exposing two of the electrodes located adjacent to each other but in the different sections; providing post electrodes respectively on all the paired electrodes formed in all the sections by filling a conductive material in the holes of the resin layer on the principal surface; and forming multiple optical semiconductor devices by cutting the light-emitting substrate into sections, the light-emitting substrate provided with the post electrodes respectively on all the paired electrodes formed in all the sections.

Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: An embedded package structure module with high-density electrical connections, including: a drive IC structure, an LED array structure and a plurality of conductive structures. The drive IC structure has at least one concave groove. The LED array structure is received in the at least one concave groove of the drive IC structure, and the LED array structure has a plurality of second open grooves formed on its lateral wall and close to the drive IC structure. The conductive structures respectively traverse the second open grooves in order to make the conductive structures electrically connect between the drive IC structure and the LED array structure.