Abstract: A mother substrate for forming flat panel display apparatuses and a method of manufacturing the same, the mother substrate including a substrate; a plurality of display units on the substrate, the display units being for forming a plurality of flat panel display apparatuses; a sealing substrate facing the display units; sealing members between the substrate and the sealing substrate, the sealing members surrounding each of the display units; a plurality of wiring units between the substrate and the sealing substrate, the wiring units overlapping the sealing members; a connecting unit including a conductive material, the connecting unit connecting adjacent wiring units in one direction and having a width that is greater than a width of each of the wiring units; and inlets connected to the plurality of wiring units and an external power source, the inlets being for applying a voltage to the plurality of wiring units.

Abstract: An electrical device containing multiple light emitting diode (LED) dies each having respective first and second connectors suitable to receive current through the LED die. A common base layer of a first electrically conductive material has cavities into which at least one LED die is mounted with its second connector electrically connected by a conductive bonding material to the first conductive material of the base layer. One or more over-layer sections of a second electrically conductive material each are electrically connected by a bond to at least one of the first connector of an LED die. And an insulator electrically separates the first conductive material of the base layer from the second conductive material of over-layer sections.

Abstract: A submount for a light emitting device package includes a substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed.

Abstract: A light emitting diode (LED) chip includes a substrate, a light emitting semiconductor device, a first electrode, and a second electrode. The light emitting semiconductor device has a recess and includes a first portion and a second portion. The first portion is disposed on the substrate and located between the second portion and the substrate. The recess penetrates the second portion and exposes an exposed region of the first portion. The transverse sectional area of the first portion and the transverse sectional area of the second portion increase along a direction away from the substrate. The first electrode is disposed on the exposed region of the first portion and electrically connected to the first portion. The second electrode is disposed on and electrically connected to the second portion.

Abstract: A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGaN is formed on the first growth substrate to create a portion of a vertical light emitting diode. Plural trenches are formed in the compound semiconductor material. Passivating material is deposited in one or more trenches. A hard material is at least partially deposited in the trenches and optionally on portions of the compound semiconductor material. The hard material has a hardness greater than the hardness of the compound semiconductor. A metal layer is deposited over the compound semiconductor material followed by metal planarization. A new host substrate is bonded to the metal layer and the first growth substrate is removed. Dicing is used to form individual LED devices.

Abstract: According to an embodiment of the invention, a light emitting chip package is provided, which includes a carrier substrate having a first surface and an opposite second surface, a cavity extending from the first surface toward the second surface, at least a electrical conductive via and at least a thermal conductive via, located outside of the cavity and penetrating through the first surface and the second surface of the carrier substrate, a light emitting element having contact electrodes and disposed in the cavity, wherein the contact electrode are electrically connected to the electrical conductive via and are electrically insulated from the thermal conductive via.

Abstract: In order to provide an LED light emitting device that can easily control a color temperature of white light, the LED light emitting device is provided with a plurality of types of light emitting parts that: respectively have LED elements that emit ultraviolet radiation or violet color visible light, and phosphors that absorb the ultraviolet radiation or violet color visible light to emit colored light; and emit the colored light, wherein: the colored light emitted by the plurality of types of light emitting parts become white light when all mixed with each other; the LED elements of the plurality of types of light emitting parts are all the same ones, and mounted on a single base material; and two or more light emitting parts overlap with each other in their parts.

Abstract: A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.

Abstract: Large-Area lighting systems and methods of making the same. More specifically, groups of organic light emitting modules, such as organic light emitting diode modules, coupled in series with respect to on another are provided. The modules cathode of each organic light emitting module is electrically coupled to the anode of an adjacent light emitting module in an interconnect region. A portion of the cathode of each module extends adjacent to an active area of an adjacent module at an interconnect region. Methods of fabricating series groups of organic light emitting modules employing continuous material layers is also provided.

Abstract: An organic light emitting device is provided. The device includes an anode, a cathode, and an organic emissive stack disposed between the anode and the cathode. The device may be a “pixel” in a display, capable of emitting a wide variety of colors through the use of independently addressable “sub-pixels,” each subpixel emitting a different spectrum of light. In the most general sense, the device includes a first subpixel and a second subpixel, and at least one of the anode and the cathode has independently addressable first and second regions corresponding to the first and second subpixels. The device includes an emissive stack disposed between the anode and the cathode. The emissive stack includes a first organic emissive layer and a second organic emissive layer. The first organic emissive layer is disposed between the anode and the cathode, and extends throughout the first and second regions.

Abstract: It is an object of the present invention to provide a display device that has a structure of an electrode where a residue of a transparent conductive film is not generated when a weak acid solution is used in etching, which is particularly appropriate for an electrode of a light-emitting element. A display device according to the present invention has an electrode that has a laminated structure of laminated transparent conductive films, and the electrode has a first transparent conductive film as the bottom layer, where no residue is generated when a weak acid solution is used in etching, and a second transparent conductive film as the top layer, which has a work function of 5.0 eV or more.

Abstract: A pane assembly having an illumination system, comprising at least: a) a pane (1) b) an LED light strip (2) attached on the edge of the pane (1) by a connecting piece (6), wherein the LED light strip (2) comprises at least: b.1) an LED circuit board (3), b.2) an LED (4), b.3) an electrical connecting cable (7) b.4) a polymer sheath (5) of the LED circuit board (3), the LED (4), and of the electrical connection cable (7) and c) a reflector (8) being arranged to the pane (1).

Abstract: Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material.

Abstract: An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching element and the driving element, the planarization layer having a substantially flat top surface; a cathode on the planarization layer, the cathode connected to the driving element; an emitting layer on the cathode; and an anode on the emitting layer.

Abstract: A light source and method for fabricating the same are disclosed. The light source includes a die, a light conversion component, and a scattering ring. The die emits light of a first wavelength through a top surface of the die and one or more side surfaces of the die, and is bonded to a mounting substrate. The light conversion component converts light of the first wavelength to light of a second wavelength, the light conversion component having a bottom surface bonded to the top surface of the die. The light conversion component has lateral dimensions such that a space exists around the die, the space being bounded by the substrate and the light conversion component. The scattering ring is positioned in the space such that a portion of the light emitted from the side surfaces of the die is scattered into the light conversion component.

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract: A light emitting module includes a light source, a light guide plate, and a reflecting mask. The light source includes a circuit board and a light emitting device fixed on the circuit board. The light emitting device includes a plurality of light emitting elements and a control circuit. The light guide plate receives light from the light emitting device and exits from the light guide plate, includes a plurality of light emitting sidewalls, a plurality of reflection walls, and a receiving hole defined in the light guide plate. The receiving hole includes a plurality of light incident sidewalls. The reflecting mask covers the receiving hole, including a bottom surface and a plurality of reflecting surfaces.

Abstract: Light emitting device (LED) array assemblies and related methods are provided. An LED array assembly can include a primary substrate with an array of light emitting devices disposed on the primary substrate. The LED array assembly can also include a secondary substrate comprising at least one or more grooves. The primary substrate can be positioned on the secondary substrate with the grooves facing the primary substrate.

Abstract: A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.

Abstract: An LED packaging method provides a package that includes a substrate, a LED chip, a carbon naonotube thin film and an adhesive layer. The LED chip includes an anode and a cathode. The carbon naonotube thin film includes at least two electrically conductive areas spaced from each other. The anode and the cathode are electrically connected to the adjacent electrically conductive areas. The adhesive layer is coated on the LED chip and the carbon nanotube thin film.

Abstract: Disclosed are a light emitting diode package and a manufacturing method thereof. According to an embodiment of the present invention, the method includes: manufacturing a package main body having a plurality of cavities, the cavities being formed in a line on one surface, through molding by putting thermoplastic polymer into a previously produced mold; forming an electrode passing through the package main body; mounting a light emitting diode chip on a basal surface of the each cavity formed in the package main body; connecting electrically the light emitting diode chip and the electrode by using a bonding means; and sealing the light emitting diode chip and the bonding means by using a molding resin.

Abstract: A luminous structure based on light-emitting diodes, which includes: a first dielectric element with a substantially plane main face associated with a first electrode; a second dielectric element with a substantially plane main face associated with a second electrode that faces the first electrode and lies in a different plane; at least a first light-emitting diode including a semiconductor chip including, on first and second opposed faces, first and second electrical contacts, the first electrical contact being electrically connected to the first electrode, the second electrical contact being electrically connected to the second electrode, and at least the first element at least partly transmitting radiation within the ultraviolet or in the visible.

Abstract: Methods and systems for coating of semiconductor devices using droplets of wavelength conversion or phosphor particles in a liquid medium. A plurality of nozzles delivers a controlled amount of the matrix material to the surface of the semiconductor device, with each of said nozzles having an opening for the matrix material to pass. The opening has a diameter wherein the diameter of the phosphor particles is less than or approximately equal to one half the diameter of the opening. The phosphor particles are also substantially spherical or rounded. The nozzles are typically arranged on a print head that utilizes jet printing techniques to cover the semiconductor device with a layer of the matrix material. The methods and systems are particularly applicable to covering LEDs with a layer of phosphor materials.

Abstract: An exemplary LED module includes a base, an anisotropic conductive film on the base, multiple LED dies on the anisotropic conductive film, multiple first electrodes between the base and the anisotropic conductive film, and multiple second electrodes on the LED dies. The LED dies are arranged in multiple rows by multiple columns. The first electrodes each are elongated and parallel to each other. The second electrodes each are elongated and parallel to each other. The LED dies of each column are connected to one of the first electrodes electrically. Each second electrode is electrically coupled to the LED dies of one row.

Abstract: One embodiment of the invention relates to a method of manufacturing a light emitting diode. The method includes forming an insulating layer on an area, not covered by a seed layer, of at least one of a p-type semiconductor layer and an n-type semiconductor layer, wherein the impurity concentration varies on the surface of the area; and immersing at least part of the seed layer into an electrolyte having metal ions which tend to reduce and deposit on the seed layer under no bias voltage.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: Techniques for light emitting diode (LED) lighting with heat spreading in illumination gaps. Inexpensive structural aluminum may be suitably employed to form a passive heat spreading mount for plural LEDs whose illumination collectively combines to provide the light needed by a particular lighting fixture, such as a pendant chandelier, by way of example, by angling fins of the passive heat spreading mount to correspond to illumination gaps of the LEDs.

Abstract: Apparatuses and methods for producing light emitting devices maximizing luminous flux output are disclosed. In one possible embodiment, a light emitting device comprises a substrate and a reflective layer at least partially covering the substrate. The reflective layer is non-yellowing, and may be substantially light transparent. One or more light emitting diode (LED) chips are disposed on the substrate. The light emitting device may emit white light. The reflective layer may comprise a silicone carrier with light reflective particles dispersed in the silicone carrier. A light diffusion lens may also be disposed on the substrate and surrounding the LED chips. Furthermore, one or more microspheres, light scattering particles, and/or phosphor particles may be dispersed in the lens. In one possible method for producing a light emitting device, a substrate is provided.

Abstract: A method of manufacturing a light-emitting device includes forming a planar board that includes a plurality of first metallic plates and a plurality of second metallic plates continuously connected by a resin, by use of a positioning frame including a plurality of first concave portions and a plurality of second concave portions, mounting a plurality of light-emitting diode elements on the planar board, and sealing the light-emitting diode elements collectively, thereby producing a plurality of light-emitting devices.

Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Abstract: A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.

Abstract: Embodiments of the present invention provide an LED having a Wavelength Shift Layer (WSL) and method of manufacture. Specifically, under embodiment of the present invention, a WSL layer is applied over an LED chip. The WSL itself typically comprises two layers: an adhesion layer applied over a set (at least one) of LED chips, and a conformal coating over the adhesion layer. The adhesion layer provides improved adhesive effect of the conformal coating to the LED chip(s). The conformal coating is comprised of a particular phosphor ratio that is determined based on a wavelength measurement of the underlying LED chip(s). Specifically, under the present invention, a wavelength of a light output by an LED chip(s) (e.g., blue or ultra-violet (UV)) is measured (e.g., at the wafer level). Typically, the phosphor ratio of is comprised of at least one of the following colors: yellow, green, or red. Regardless, this conformal coating is applied over a glue layer that itself is applied over the LED chip.

Abstract: A method of producing a slider wafer populated with electromagnetic components optically aligned with photonic elements for HAMR applications. Laser chips are transferred from a laser substrate wafer to the slider wafer by a massively parallel printing transfer process. After wafer bonding the laser chips to the slider wafer, the shape and optical alignment of the photonic elements are precisely aligned en masse by lithographic processing.

Abstract: The present invention provides a liquid crystal display panel and a method of manufacturing the liquid crystal display panel capable of reducing or eliminating metal erosion in an area in which a conductive dot is formed. In some embodiments, a display panel comprises a common electrode formed on an upper substrate, a first electrode formed on a lower substrate opposing the upper substrate and configured to receive a common voltage, a conductive dot formed between the upper substrate and the lower substrate and positioned to supply the common electrode with the common voltage, an insulating layer having a contact hole exposing the first electrode, and a second electrode formed on the insulating layer to connect the conductive dot and the first electrode, wherein a cross sectional area of the conductive dot between the upper substrate and the lower substrate is greater than a cross sectional area of an opening of the contact hole.

Abstract: One embodiment in accordance with the invention is a system that can include a first wafer and a second wafer. The first wafer and the second wafer can be bonded together by a wafer bonding process that forms a gap between the first wafer and the second wafer. The gap can be configured for receiving a heat extracting material.

Abstract: A photonic device generates light from a full spectrum of lights including white light. The device includes two or more LEDs grown on a substrate, each generating light of a different wavelength and separately controlled. A light-emitting structure is formed on the substrate and apportioned into the two or more LEDs by etching to separate the light-emitting structure into different portions. At least one of the LEDs is coated with a phosphor material so that different wavelengths of light are generated by the LEDs while the same wavelength of light is emitted from the light-emitting structure.

Abstract: A method of forming a LED-based light for replacing a conventional fluorescent bulb in a fluorescent light fixture includes forming a heat sink by shaping an elongate sheet of highly thermally conductive material to increase a surface area to width ratio thereof mounting LEDs in thermally conductive relation with the heat sink, and enclosing the LEDs within a light transmitting cover.

Abstract: A stereoscopic picture is viewable from all directions with high reproducibility without complicating a stereoscopic display mechanism, compared to related art. A cylindrical rotation section 104 rotating around a rotation shaft as a rotation center, a two-dimensional light-emitting element array 101 mounted in the rotation section and having a light-emission surface formed of a plurality of light-emitting elements arranged in a matrix, and a slit 102 arranged in a circumferential surface of the rotation section in a position facing the light-emission surface are included. As the two-dimensional light-emitting element array 101, a two-dimensional light-emitting element array including a curved portion with a concave surface which is formed as a light-emission surface is used. The plurality of light-emitting elements emit light, which corresponds to orientation of the light-emission surface, to outside of the rotation section through the slit 102.

Abstract: An LED module includes a layer stack of a substrateless LED, an emission area of the layer stack, the emission area being provided for light emission, a substrate having a top side on which the substrateless LED is arranged, contact areas arranged at a side area of the substrate, wherein the side area is perpendicular to the emission area, and/or including a base body which has contact areas at a side area and on which the substrate is mounted in such a way that the side area is perpendicular to the emission area, a first connection line between the LED and one of the contact area, and a second connection line between the LED and another of the contact areas.

Abstract: Light emitting diodes and methods for manufacturing light emitting diodes are disclosed herein. In one embodiment, a method for manufacturing a light emitting diode (LED) comprises applying a first light conversion material to a first region on the LED and applying a second light conversion material to a second, different region on the LED. A portion of the LED is exposed after applying the first and second light conversion materials.

Abstract: A flip-chip type semiconductor light-emitting device having a positive electrode and a negative electrode similar in electrode area and capable of preventing the misalignment of the light-emitting device by utilizing the self alignment effect in manufacturing a light-emitting diode lamp and a printed circuit board for the flip-chip type semiconductor light-emitting device are provided. Furthermore, adopted are a flip-chip type semiconductor light-emitting device 1 which is provided with a negative electrode pad and a positive electrode pad formed on the side opposite the transparent substrate side of the semiconductor layer, wherein each of the electrode pads is formed in the same shape as each other and a printed circuit board for the light-emitting device has a pair of the electrode patterns which are formed in the same shape as each other. Still furthermore, a soldering film is included in each of the electrode pads.

Abstract: An organic light-emitting display apparatus includes a substrate, a plurality of pixel electrodes formed on the substrate, a counter electrode formed to cover all of the plurality of pixel electrodes, organic light emitting layers disposed between the plurality of pixel electrodes and the counter electrode, an encapsulation substrate disposed above the substrate to cover the counter electrode, a sealant formed along edges of the substrate and the encapsulation substrate to seal a space formed between the substrate and the encapsulation substrate, a filler filled in the space formed between the substrate and the encapsulation substrate, and bus electrodes disposed on an inner surface of the encapsulation substrate facing the counter electrode. Each of the bus electrodes includes projecting portions and a base portion connecting the projecting portions to each other.

Abstract: A method of manufacturing a flexible display device is disclosed. The method includes arranging a first substrate having a plurality of depression units, forming a first plastic film in each of the plurality of depression units, forming a thin film transistor (TFT) on the first plastic film, forming a display device on the TFT, where the display device is configured to be electrically connected to the TFT, encapsulating an upper portion of the display device, cutting the first substrate, and separating the first substrate from the first plastic film.

Abstract: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. A patterned wafer has a plurality of individual LED attachment sites, and an alignment wafer has a plurality of individual cavities. The patterned wafer and the alignment wafer are superimposed with the LED attachment sites corresponding generally to the cavities of the alignment wafer. At least one LED is placed in the cavities using the cavity to align the LED relative to the patterned wafer. The LED is electrically connected to contacts on the patterned wafer, and a phosphor layer is formed in the cavity to cover at least a part of the LED.

Abstract: A light transmissive cover for a device comprising: a cover member of light transmissive material; and a junction member joined to the cover member, the junction member being a member used to be joined to the body of the device and having a light interrupting film on the inner surface thereof. A device provided with a light transmissive cover, the device being provided with a cover member of light transmissive material joined to the body of device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member is also disclosed. In addition, methods for manufacturing them disclosed.

Abstract: A method for manufacturing a light emitting device includes preparing a substrate where a crystal growth surface has an a-plane or an m-plane; forming a buffer layer on the substrate; forming a semiconductor layer on the buffer layer; and separating the semiconductor layer from the substrate by removing the buffer layer.

Abstract: In an embodiment, the invention provides a light source comprising a plurality of light-emitting semiconductor chips, a plurality of electrical leads and an encapsulant. The plurality of electrical leads is connected to the plurality of light-emitting semiconductor chips. The encapsulant completely encases the plurality of semiconductor chips. The encapsulant partially encases the plurality of electrical leads.

Abstract: Methods and structures are provided for wafer-level packaging of light-emitting diodes (LEDs). An array of LED die are mounted on a packaging substrate. The substrate may include an array of patterned metal contacts on a front side. The metal contacts may be in electrical communication with control logic formed in the substrate. The LEDs mounted on the packaging substrate may also be encapsulated individually or in groups and then singulated, or the LEDs mounted on the packaging substrate may be integrated with a micro-mirror array or an array of lenses.

Abstract: A light emitting element package includes a package substrate, at least one light emitting element, a first encapsulation layer and a second encapsulation layer. The at least one light emitting element is mounted on the package substrate. The first encapsulation layer is mounted on the package substrate for encapsulation the at least one light emitting element. The second encapsulation layer is configured for encapsulation a back side of the at least one light emitting element.

Abstract: An organic EL device includes a first substrate and a plurality of organic EL elements above a first portion of the first substrate. A first inorganic layer covers the plurality of organic EL elements. An active layer is above a second portion of the first substrate that is different than the first portion. The active layer comprises a material that is at least one of hygroscopic and oxidizable. A second inorganic layer covers the active layer. A second substrate is opposite the first substrate, with the plurality of organic EL elements being between the first and second substrates. A seal extends between the first and second substrates to define a sealed space between the first and second substrates. The second inorganic layer includes through-holes that expose the active layer to the sealed space that is defined by the first substrate, the second substrate, and the seal.