Abstract: An ink for forming a scintillator product includes a phenylated siloxane polymer having at least one functional group per molecule for crosslinking, a filler having a refractive index about matching a refractive index of the phenylated siloxane polymer, where the refractive indices are within about 5% of one another, a rheology modifier, and at least one fluorescent dye.

Abstract: A display device includes a substrate, a plurality of pixels above the substrate, each of the plurality of pixels including a first electrode, a light emitting layer above the first electrode, and a second electrode above the light emitting layer, a display region including the plurality of pixels, a first organic insulating layer located between the substrate and the light emitting layer, and a sealing layer above the second electrode and covering the plurality of pixels. The first organic insulating layer includes a first opening part surrounding the display region, the sealing layer has a first inorganic insulating layer, a second organic insulating layer and a second inorganic insulating layer, the first inorganic insulating layer and the second inorganic insulating layer cover the first opening part, a second opening part passing through the first inorganic insulating layer and the second inorganic insulating layer.

Abstract: A semiconductor device has a PCB with an antenna and a semiconductor package mounted onto the PCB. An epoxy molding compound bump is formed or disposed over the PCB opposite the semiconductor package. A first shielding layer is formed over the PCB. A second shielding layer is formed over the semiconductor package. A board-to-board (B2B) connector is disposed on the PCB or as part of the semiconductor package. A conductive bump is disposed between the semiconductor package and PCB.

Abstract: An electronic device includes a substrate, a first light-emitting unit, a first light conversion unit, and a first buffer layer. The first light-emitting unit is disposed on the substrate. The first light conversion unit is disposed on the first light-emitting unit. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit. The thickness of the first light conversion unit is greater than the thickness of the first light-emitting unit.

Abstract: In an embodiment, a method of manufacturing (100) is described. The method comprises providing (102) a first layer defining a first inner surface (203a) and a first outer surface (203b), a second layer defining a second inner surface (205a) and a second outer surface (205b), and an electrical component (206) positioned on the first inner surface or the second inner surface. The method further comprises attaching (104) the first and second layers together to create a device (200) comprising the first and second layers, wherein the first outer surface and the second outer surface define an external surface of the device. The device further comprises a sealed portion (208) defined by liquid-tight attachment between the first and second inner surfaces. In use of the device, the sealed portion prevents liquid ingress into the device between the first and second layers towards the electrical component.

Abstract: A light-emitting element includes a first n-type contact layer, a light-emitting layer that is located on the first n-type contact layer and emits light at a wavelength of not less than 210 nm and not more than 365 nm, a p-type layer that includes AlxGayIn1-x-yN (0?x+y?1, 0?x, y?1) and is located above the light-emitting layer, a second n-type contact layer that includes AlxGayIn1-x-yN (0?x+y?1, 0?x, y?1), is located on the p-type layer and forms a tunnel junction with the p-type layer, an n-electrode connected to the first n-type contact layer, and a p-electrode connected to the second n-type contact layer. Band gaps of the p-type layer and the second n-type contact layer are larger than a band gap of the light-emitting layer.

Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

Abstract: A solar module includes solar cells that are encapsulated. A back layer is disposed towards back sides of the solar cells and a transparent layer is disposed towards front sides of the solar cells. A protection coating is formed on a surface of the solar cells. The protection coating can be continuous or have a pattern with cutouts that expose the surface of the solar cells.

Abstract: A phosphor substrate having at least one light emitting element mounted on one surface, includes an insulating substrate, at least one electrode pair disposed on one surface of the insulating substrate and bonded to the light emitting element, and a phosphor layer disposed on one surface of the insulating substrate, including a phosphor in which a light emission peak wavelength, in a case where light emitted by the element is used as excitation light, is in a visible light region, in which a bonded surface of the electrode pair facing an outer side in a thickness direction of the insulating substrate, the bonded surface being bonded to the light emitting element, is positioned further on the outer side in the thickness direction than a non-bonded surface other than the bonded surface, and at least a part of the phosphor layer is disposed around the bonded surface of the one surface.

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-?) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-? metal precursor and an oxygen precursor comprising O2, wherein the low-? metal of the metal precursor has an electronegativity of 1.6 or lower.

Abstract: An LED backlight module includes an LED light plate, a diffusion plate, a brightening film, an MOP film, and a QBEF film. The LED light plate includes a driving circuit, a substrate, and LED devices on the substrate. Each LED device includes a transparent LED frame, an LED chip disposed on a bottom portion of the transparent LED frame, and a packaging glue layer formed inside the transparent LED frame and covering the LED chip. A diffusion agent is distributed in the packaging glue layer.

Abstract: The present disclosure is directed to examples of a light emitting diode (LED) device. In one embodiment, the LED device includes a printed circuit board (PCB), at least one LED chip electrically coupled to the PCB, a LED package to encapsulate the at least one LED chip, and at least one volatile organic compound (VOC) barrier layer coating the LED package.

Abstract: A display device includes: a substrate; a display element on the substrate; a capping layer on the display element; and a thin film encapsulation layer on the capping layer, wherein the capping layer includes: a first capping layer on the display element; a second capping layer on the first capping layer, the second capping layer having a refractive index greater than that of the first capping layer; and a third capping layer on the second capping layer, the third capping layer having a refractive index smaller than that of the second capping layer, wherein the second capping layer has a thickness of 30 nanometers (nm) to 60 nm.

Abstract: Disclosed herein is a display substrate comprising: a support; a pixel on the support and with a thin-film transistor (TFT) therein; and a barrier on the support, surrounding the pixel, and separated from the pixel by a trench; wherein the barrier comprises a protrusion extending from the support and configured to retard invasion of moisture and oxygen into the pixel; wherein the protrusion comprises a layer coplanar with a layer of the TFT. Also disclosed herein are a display panel with this display substrate and a system with this display panel.

Abstract: A phosphor substrate having at least one light emitting element mounted on one surface, includes an insulating substrate, at least one electrode pair disposed on one surface of the insulating substrate and bonded to the light emitting element, and a phosphor layer disposed on one surface of the insulating substrate, including a phosphor in which a light emission peak wavelength, in a case where light emitted by the element is used as excitation light, is in a visible light region, in which a bonded surface of the electrode pair facing an outer side in a thickness direction of the insulating substrate, the bonded surface being bonded to the light emitting element, is positioned further on the outer side in the thickness direction than a non-bonded surface other than the bonded surface, and at least a part of the phosphor layer is disposed around the bonded surface of the one surface.

Abstract: An electronic device is provided and includes first region including organic layer in light emitting element; nitride layers over organic layer; first organic insulating layer over organic layer; and second region including nitride layers, outside first region, wherein second region does not include organic layer and first organic insulating layer, wherein nitride layers include first, second and third nitride layers, wherein first nitride layer is between organic layer and first organic insulating layer in first region, wherein second and third nitride layers are over first nitride layer, and wherein second nitride layer is in contact with first organic insulating layer in first region.

Abstract: The invention relates to improved methods and implementation of reliably manufacturing laminated solar panel products having one or more axis of curvature, wherein at least one solar cell also has one or more axis of curvature, in a manufacturing plant, the manufacturing plant being capable of continuous, optimized operation. A substrate and a superstrate having a doubly-curved geometry may be assembled with a core disposed therebetween, the core comprising a solar cell array including at least one solar cell. During the lamination process, the plant substantially eliminates cracking of the at least one solar cell of the solar array through controlled and uniform application of lamination pressure and temperature that applies uniform local pressure simultaneously to each cell, resulting in a durable and reliable product. The invention further relates to a plant and/or facility having efficient, effective, and repeatable results relating to such methods.

Abstract: An encapsulation film, an organic electronic device comprising the same, and a method for manufacturing an organic electronic device using the same are provided. The encapsulation film has excellent reliability that allows forming a structure capable of blocking moisture or oxygen flowing into an organic electronic device from the outside, absorbs and disperses the stress according to panel bending caused by CTE mismatch, and overcomes the performance decrease due to reliability degradation, while preventing generation of bright spots in the organic electronic device.

Abstract: An optoelectronic semiconductor element may include an optoelectronic semiconductor chip. The optoelectronic semiconductor chip may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element connected to the first semiconductor layer in an electrically conductive manner, and a second contact element connected to the second semiconductor layer in an electrically conductive manner. The first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack. The first semiconductor layer to where the second semiconductor layer is exposed. The first contact element is arranged over the first semiconductor layer, and the second contact element is arranged over the first semiconductor layer.

Abstract: Wafer-level packaging of solid-state transducers (“SSTs”) is disclosed herein. A method in accordance with a particular embodiment includes forming a transducer structure having a first surface and a second surface opposite the first surface, and forming a plurality of separators that extend from at least the first surface of the transducer structure to beyond the second surface. The separators can demarcate lateral dimensions of individual SSTs. The method can further include forming a support substrate on the first surface of the transducer structure, and forming a plurality of discrete optical elements on the second surface of the transducer structure. The separators can form barriers between the discrete optical elements. The method can still further include dicing the SSTs along the separators. Associated SST devices and systems are also disclosed herein.

Abstract: Light Emitting Diodes (LEDs) made with GaN and related materials are used to realize high efficiency devices which emit visible radiation. These GaN-based LEDs consists of a multi-layer structure which include p-type electron confinement layers, and p-type current spreading and ohmic contacts layers located above the active region. The alignment of the etched features which penetrate near or through the active region and the ohmic contact is critical and is currently a technological challenge in the fabrication process. Any errors in this alignment and successive layers will short across the active layers of the device and result in reduced yield of functional devices. The invention described herein provides a method and apparatus to realize the successful alignment and streamlined fabrication of high-density LED array devices. The result is a higher pixel density GaN-based LED device with higher current handling capability resulting in a brighter device of the same area.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A light emitting display device includes: a display element layer having light emitting elements; a first sub-pixel including a first light emitting element from among the plurality of light emitting elements in a first sub-pixel area of the display element layer; a second sub-pixel including a second light emitting element from among the plurality of light emitting elements in a second sub-pixel area of the display element layer; a third sub-pixel including a third light emitting element from among the plurality of light emitting elements in a third sub-pixel area of the display element layer; a partition wall between the first, second, and third sub-pixels and over an insulating layer, covering the first, second, and third light emitting elements; a first color conversion layer over the insulating layer in the first sub-pixel area and surrounded by the partition wall; and a first color filter over the first color conversion layer.

Abstract: A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode made of Rh and in contact with the p-type semiconductor layer; a p-side electrode covering layer made of TiN that covers the p-side contact electrode; a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer; and a p-side pad electrode in contact with the p-side electrode covering layer in a p-side opening that extends through the dielectric protective layer on the p-side contact electrode.

Abstract: A light-emitting diode (LED) package assembly includes a substrate. The substrate includes a top surface, a bottom surface and an opening formed through the substrate. The opening includes a first portion adjacent the top surface and a second portion adjacent the bottom surface that is wider than the first portion such that portions of the substrate overhang the second portion of the opening. Pads are provided on a bottom surface of the portions of the substrate that overhang the second portion of the opening. The assembly also includes a hybridized device in the opening. The hybridized device includes a silicon backplane that has a top surface, a bottom surface and interconnects on the top surface. The interconnects are electrically coupled to the pads. The hybridized device also includes an LED array on the top surface of the silicon backplane.

Abstract: The semiconductor light-emitting element has an n-type semiconductor layer; an active layer provided on a first upper surface of the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode provided in contact with the upper surface of the p-type semiconductor layer; a p-side current diffusion layer provided on the p-side contact electrode in a region narrower than a formation region of the p-side contact electrode; a p-side pad electrode provided on the p-side current diffusion layer; an n-side contact electrode provided in contact with a second upper surface of the n-type semiconductor layer; an n-side current diffusion layer provided on the n-side contact electrode over a region wider than a formation region of the n-side contact electrode, and including a TiN layer; and an n-side pad electrode provided on the n-side current diffusion layer.

Abstract: A display apparatus includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmission area, and the peripheral area is arranged outside the main display area. The display apparatus further includes a main thin-film transistor arranged in the main display area, a main organic light-emitting diode arranged in the main display area and connected to the main thin-film transistor, an auxiliary thin-film transistor arranged in the component area, an auxiliary organic light-emitting diode arranged in the component area and connected to the auxiliary thin-film transistor, and a lower metal layer arranged between the substrate and the auxiliary thin-film transistor in the component area and having an undercut structure.

Abstract: The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.

Abstract: A shadow mask for patterned vapor deposition of an organic light-emitting diode (OLED) material includes a ceramic membrane under tensile stress with a plurality of through-apertures forming an aperture array through which a vaporized deposition material can pass. A multilayer peripheral support is attached to a rear surface with a hollow portion beneath the aperture array. A compressively-stressed interlayer balances the tensile stress of the ceramic membrane. A shadow mask module with multiple shadow masks is also provided and includes a rigid carrier having plural windows with a shadow mask positioned in each window. To make the module, shadow mask blanks are affixed to each carrier window followed by etching of apertures and support layers. In this way extremely flat masks with precise aperture patterns are formed.

Abstract: An illumination assembly includes a polymeric substrate, an electrical circuit including two conductors supported by the polymeric substrate, an LED electrically coupled to the two conductors, and a heat spreader thermally coupled to the LED. The two conductors can be printed on the polymeric substrate, embedded within the polymeric substrate, or lie atop the polymeric substrate. The illumination assembly may be fabricated in three-dimensional form factors.

Abstract: A filament and a bulb are provided. The support in the filament includes a plurality of board bodies, and two adjacent board bodies are connected by a conductive connecting pin and an outer end of each of the board bodies at both ends is connected with a conductive pin. The bulb includes a lamp cap, a shell, a stem sealed with the shell, a conductive support fixed to the stem and a plurality of the LED filaments, the filaments are electrically connected to the conductive support.

Abstract: A display device, which includes a display region in which a plurality of pixels are arranged, includes a first organic insulating film, a first groove, which exists in a frame shape surrounding the display region to separate the first organic insulating film, a first inorganic partition portion, which is arranged in the first groove, and is made of an inorganic insulating material that exists in a frame shape surrounding the display region, a second organic insulating film formed above the first organic insulating film and the first inorganic partition portion, and a second groove, which exists in a frame shape surrounding the display region to separate the second organic insulating film, and is located inside the first groove in plan view.

Abstract: A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel.

Abstract: A package for at least one laser diode includes: leads configured to be electrically connected to the at least one laser diode; a base including a mounting surface on which the at least one laser diode is to be mounted and a lateral wall located around the mounting surface so as to surround the at least one laser diode, the lateral wall defining first through-holes and including a light-transmissive part configured to transmit a laser beam emitted from the at least one laser diode; and a lead holding member bonded to the lateral wall of the base and defining second through-holes. The leads are disposed through the first through-holes and the second through-holes. At least a central portion of each of the leads is made of copper.

Abstract: Disclosed herein are a stretchable display panel and a stretchable device. The stretchable display panel comprises: a lower substrate having an active area and a non-active area surrounding the active area; a plurality of individual substrates disposed on the lower substrate, spaced apart from each other and located in the active area; a connection line electrically connecting a pad disposed on the individual substrate; a plurality of pixels disposed on the plurality of individual substrates; and an upper substrate disposed above the plurality of pixels, wherein the modulus of elasticity of the individual substrates is higher than that of at least one part of the lower substrate.

Abstract: A layout of Micro LED for augmented reality (AR) and mixed reality (MR) is provided in the present invention, including multiple display cells arranging into a cell array, multiple micro LEDs set on the edge region of each display cell and exposing the transparent region surrounded by the edge region, and pixel driver circuits set on the edge region right under the Micro LEDs.

Abstract: Aspects described herein include an apparatus supporting optical alignment with one or more optical waveguides optically exposed along an edge of a photonic integrated circuit (IC). The apparatus comprises a frame body comprising an upper portion defining a reference surface, and a lateral portion defining an interface for an optical connector connected with one or more optical fibers. The lateral portion comprises one or more optical components defining an optical path through the lateral portion. The one or more optical components are arranged relative to the reference surface such that the one or more optical components align with (i) the one or more optical waveguides along at least one dimension when the reference surface contacts a top surface of an anchor IC, and with (ii) the one or more optical fibers when the optical connector is connected at the interface.

Abstract: An illumination source includes a laser driver unit configured to emit a plasma sustaining beam. An ingress collimator receives the plasma sustaining beam and produces a collimated ingress beam. A focusing optic receives the collimated ingress beam and produce a focused sustaining beam. A sealed lamp chamber contains an ionizable media that, once ignited, forms a high intensity light emitting plasma having a waist size smaller than 150 microns. The sealed lamp chamber further includes an ingress window configured to receive the focused sustaining beam and an egress window configured to emit the high intensity light. An ignition source is configured to ignite the ionizable media, and an exit fiber is configured to receive and convey the high intensity light. The high intensity light is white light with a black body spectrum, and the exit fiber has a diameter in the range of 200-500 micrometers.

Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second pair of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to first and second distances between electrical contacts of the first and second surface-mount capacitors.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: An LED display is formed from a flexible transparent sheet substrate that is flexible and transparent; and a plurality of LED elements installed on one surface of the flexible transparent sheet substrate. In the LED display, the plurality of LED elements constitute a predetermined pattern of pixels on the flexible transparent sheet substrate, and using the LED elements, a predetermined moving image or still image is displayed on the one surface of the flexible transparent sheet substrate, and while the predetermined moving image or still image is being displayed on the one surface of the flexible transparent sheet substrate, form the one surface side of the flexible transparent sheet substrate, a landscape on the opposite side can be visually confirmed, and from the other surface side of the flexible transparent sheet substrate, a landscape on the opposite side can be visually confirmed.

Abstract: A display device in one embodiment according to the present invention includes a first region including a light emitting layer, a first nitride insulating layer over the light emitting layer, a first organic insulating layer over the first nitride insulating layer, a second nitride insulating layer over the first organic insulating layer, and a third nitride insulating layer over the second nitride insulating layer. The second nitride insulating layer is in contact with the first organic insulating layer and the third nitride insulating layer. An absolute value of a stress of the second nitride insulating layer is greater than or equal to an absolute value of a stress of the first nitride insulating layer and less than an absolute value of a stress of the third nitride insulating layer.

Abstract: A flexible display device is manufactured with high yield. A display device having high resistance to repeated bending is provided. The display device is manufactured by forming a separation layer over a support substrate; forming, over the separation layer, an inorganic insulating layer including a first portion and a second portion; forming a display element over the inorganic insulating layer to be overlapped with the first portion; forming a connection electrode over the inorganic insulating layer to be overlapped with the second portion; sealing the display element; separating the support substrate and the inorganic insulating layer using the separation layer; attaching a substrate to the inorganic insulating layer to be overlapped with the first portion; and etching the second portion using the substrate as a mask to expose the connection electrode.

Abstract: Provided are a light-emitting device and a method of manufacturing the same. The light-emitting device includes a flexible surface light source curved in a desired shape, a first fixture that includes first and second positioning ribs, and has a first curved surface between the first and second positioning ribs, and a second fixture having a second curved surface. The method includes mounting the surface light source in a flat state on the first positioning rib and the second positioning rib such that the front or rear surface and the first curved surface face to each other across a space, bringing the second fixture close to the first fixture and pushing the surface light source toward the first fixture to curve the surface light source, and fixing the first and second fixtures together with the curved surface light source held therebetween.

Abstract: A method for manufacturing a light emitting module includes: providing light emitting devices each including a light emitting element having an upper surface, a lateral surface, and an electrode positioned on the upper surface, a first light reflective member arranged on the lateral surface of the light emitting element, and a metal film formed on upper surfaces of the electrode and the first light reflective member; placing the light emitting devices on a light guide plate with gaps between the light emitting devices, with the metal films of the light emitting devices facing upward; forming masks respectively covering the metal films; forming a second light reflective member in the gaps between the light emitting devices on the light guide plate; removing the masks; and forming, on the light emitting devices and on the second light reflective member, wiring segments that connect to the metal films.

Abstract: A chip-on-board type photoelectric device exemplarily includes: a package substrate, provided with a chip mounting region, a first electrode and a second electrode, the first and second electrodes being arranged spaced from each other at a periphery of the chip mounting region; first photoelectric chips, arranged in the chip mounting region to form inwardly concave strip-shaped patterns as mutually spaced first color temperature regions, and electrically connected between the first and second electrodes to form at least one first photoelectric chip string; and second photoelectric chips, arranged in the chip mounting region to form second color temperature regions. A light-emitting color temperature of each the second color temperature region is higher than that of each the first color temperature region. The second photoelectric chips are electrically connected between the first and second electrodes to form second photoelectric chip strings. A good uniformity of light mixing can be achieved.

Abstract: A method for forming electrical contacts for a solar cell and a solar cell formed using the method is provided. The method includes forming a first metal layer over predefined portions of a surface of the solar cell; depositing a carbon nanotube layer over the first metal layer; and forming a second metal layer over the carbon nanotube layer, wherein the first metal layer, the carbon nanotube layer, and the second metal layer form a first metal matrix composite layer that provides electrical conductivity and mechanical support for the metal contacts.

Abstract: A method of manufacturing a display apparatus includes: forming a plurality of displays including a light-emitting diode on a surface of a first mother substrate; preparing a second mother substrate; forming a first sealed area on a surface of at least one of the first mother substrate or the second mother substrate, wherein the first sealed area surrounds each of the plurality of displays and includes a frit; firstly bonding the first mother substrate to the second mother substrate by melting the frit in the first sealed area by radiating a first laser beam; and secondly bonding the first mother substrate to the second mother substrate by forming a second sealed area in which the frit and the first mother substrate, and/or the frit and the second mother substrate, are melted and mixed with each other by radiating a second laser beam partially in the first sealed area.

Abstract: A light-emitting diode display having sub-pixel regions is provided. Each of the sub-pixel region includes a substrate, first and second electrodes, a light-emitting diode, and at least one blocking wall. The substrate has an active device. The first and second electrodes are separately disposed on the substrate. The first electrode is electrically connected to the active device, and a horizontal distance between the first and second electrodes is W1. The light-emitting diode is disposed on the substrate and includes a semiconductor stack, and first and second pads. The first pad contacts the first electrode, the second pad contacts the second electrode, and a maximum thickness of the semiconductor stack is H1. The blocking wall is disposed on the substrate and located between the first and second pads to prevent a contact therebetween. A height of the blocking wall is H2 and a width thereof is W2. H2?½H1, and W2?W1.

Abstract: The systems and methods discussed herein are for the fabrication of diffraction gratings, such as those gratings used in waveguide combiners. The waveguide combiners discussed herein are fabricated using nanoimprint lithography (NIL) of high-index and low-index materials in combination with and directional etching high-index and low-index materials. The waveguide combiners can be additionally or alternatively formed by the directional etching of transparent substrates. The waveguide combiners that include diffraction gratings discussed herein can be formed directly on permanent transparent substrates. In other examples, the diffraction gratings can be formed on temporary substrates and transferred to a permanent, transparent substrate.