Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: A flip-chip LED module fabrication method includes the steps of (a) growing an epitaxial layer consisting of a N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer on a wafer substrate, (b) dividing the wafer into individual light-emitting chips, (c) selecting qualified light-emitting chips, (d) coating an UV-curable adhesive on o a film and then bonding the selected light-emitting chips to the film by means of the UV-curable adhesive, (e) curing the UV-curable adhesive with ultraviolet rays, and (f) operating push-up needles of an equipment to knock the opposite side of the film to let the light-emitting chips be separated from the film without causing damage.

Abstract: Disclosed herein is a method for producing an LED array grid including the steps of (i) arranging N electrically conducting parallel wires, where N is an integer >1, thus creating an array of wires having a width D perpendicular to a direction of the wires, (ii) arranging LED components to the array of wires such that each LED component is electrically coupled to at least two adjacent wires, (iii) stretching the array of wires such that the width D increases, and arranging the stretched LED array grid onto a plate or between two plates

Abstract: A method for manufacturing a display device includes; a step of preparing a flexible substrate including a delamination layer on its back surface, a step of bonding a support substrate to the delamination layer of the flexible substrate via an adhesive layer, a step of forming predetermined devices on a front surface of the flexible substrate having the support substrate bonded thereto, and a step of removing the support substrate by delaminating the delamination layer from the flexible substrate having the devices formed thereon.

Abstract: A package for an electronic component and method of forming a package for an electronic component are disclosed. The package may include a metal base and a termination chip coupled to the metal base. The termination chip may include a die contact pad electrically coupled to a mounting pad and an isolating feature configured to provide electrical isolation between the metal base and the die contact pad. The contact may be configured for electrical connection to the electronic component. The metal base may be folded to form a molding cavity. The metal base may include at least one plating layer. The package may include a light emitting diode (LED) coupled to the metal base. The LED may be coupled to the metal base via a eutectic bond.

Abstract: Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350° C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.

Abstract: An LED chip package structure includes a ceramic substrate, a conductive unit, a hollow ceramic casing, many LED chips, and a package colloid. The ceramic substrate has a main body, many protrusions extended from the main body, many penetrating holes respectively penetrating through the protrusions, and many half through holes formed on a lateral side of the main body and respectively formed between each two protrusions. The conductive unit has many first conductive layers respectively formed on the protrusions, many second conductive layers respectively formed on inner surfaces of the half through holes and a bottom face of the main body, and many third conductive layers respectively filled in the penetrating holes. The hollow ceramic casing is fixed on the main body to form a receiving space. The LED chips is received in the receiving space. The package colloid is filled in the receiving space for covering the LED chips.

Abstract: Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including ?-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate.

Abstract: According to one embodiment, a light emitting element includes a semiconductor stacked body and a translucent substrate. The semiconductor stacked body includes a light emitting layer. The translucent substrate has one surface and a side surface. The semiconductor stacked body is provided on the upper surface. An unevenness uniformly distributing with average height and average pitch is provided on the side surface.

Abstract: To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate. In another embodiment, a conductor layer is formed on the outer surface of the top substrate and makes contact with the LED electrodes and conductors on the bottom substrate via openings formed in the top substrate.

Abstract: Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes.

Abstract: A package structure for photoelectronic devices comprises a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and a second surface, wherein the first surface is opposed to the second surface. The first surface has a reflective opening, and the second surface has at least two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recesses. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the surface of the second insulating layer. The second conductive layer is disposed on the surface of the second surface and inside the electrode via holes.

Abstract: An organic light emitting diode (OLED) display comprises a first substrate and a second substrate configured to comprise a pixel area and a non-pixel area other than the pixel area, a sealing member configured to adhere the first substrate and the second substrate together, reinforcing materials filled into the non-pixel area of the first substrate and the second substrate, and an accommodation unit configured to accommodate some of the reinforcing materials within at least one of the first substrate and the second substrate corresponding to the non-pixel area. A method of manufacturing the OLED display comprises: preparing a mother substrate, including a plurality of display panels and cutting lines between two adjacent display panels; cutting the mother substrate into separated unit display panels; forming grooves on a side of each unit display panels; and filling reinforcing materials in a non-pixel area of the unit display panels, some of the reinforcing materials flowing into the grooves.

Abstract: The invention relates to an electroluminescent display, illumination or indicating device and to its fabrication process. This device (1) comprises a substrate (2) coated with an electroluminescent unit (3) having two electrodes, namely an internal electrode (5) and an external electrode (6), between which a light-emitting structure (4) is placed, at least one of said electrodes being transparent to the emitted light, a protective plate (7) being assembled on the unit by means of an adhesive (7a).

Abstract: A method of manufacturing LED devices using substrate scale processing includes providing a substrate member having a surface region. A reflective layer is disposed on the surface region, the reflective surface having a reflectivity of at least 85%, An array of conductive regions is spatially disposed on the reflective surface. LED devices are affixed to each of the array regions.

Abstract: A light emitting system, a light emitting apparatus and the forming method thereof, the light emitting system comprising a plurality of light emitting units (100) and a frame for connecting the light emitting units. Each light emitting unit comprises a substrate (102), one or a plurality of chips (104) disposed on the substrate, an annular member (110) disposed on the substrate and surrounding the chips, the annular member used for adjusting the direction of the light emitted from the chips, and a protective layer (108) covering the chips, wherein the height of the protective layer is not more than that of the annular member.

Abstract: An integrated circuit packaging system includes: attaching a carrier, having a carrier top side and a carrier bottom side, and an interconnect without an active device attached to the carrier bottom side; and forming a first encapsulation, having a cavity, around the interconnect over the carrier top side with the interconnect partially exposed from the first encapsulation and with the carrier top side partially exposed with the cavity.

Abstract: A control device is provided that flexibly controls a substrate processing apparatus for each product process. Four process recipes PM 1 to PM 4 are stored in a first storage unit 255a. Corresponding to each of the process recipes, a high temperature, a medium temperature, and a low temperature pre-recipe are stored in a second storage unit 255b. A process recipe determination unit 260 determines, in response to a recipe specified by the operator, a process recipe corresponding to the specified recipe from the first storage unit 255a. A stage temperature acquisition unit 265 acquires, from the determined process recipe, a stage temperature. A pre-recipe selection unit 270 selects, from the three types of pre-recipes stored in the second storage unit 255b, one pre-recipe corresponding to the stage temperature. Before the wafer W is deposition-processed, therefore, the PM may be well-conditioned according to the selected pre-recipe.

Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.

Abstract: Provided are an organic light-emitting diode (OLED) display apparatus and a method of manufacturing the OLED display apparatus. Pixel-defining layers (PDLs) are formed of inorganic and organic insulating layers to minimize non-uniformities of the thicknesses of organic emission layers (OEMLs) and planarize lower thin film transistors (TFTs). Therefore, a lifespan of the OLED display apparatus is improved.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

Abstract: Encapsulated organic electronic devices including organic light emitting diodes are made using an adhesive component as a mask while the device is being constructed. An adhesive-coated liner can be applied to the device substrate and openings created therein by removing portions of the liner and adhesive, or a patterned adhesive layer having openings therein can be formed on the device substrate, followed by deposition of the device layers and application of a sealing layer.

Abstract: Side-mountable semiconductor light emitting device packages include an electrically insulating substrate having a front face and a back face and a side face extending therebetween. The side face is configured for mounting on an underlying surface. An electrically conductive contact is provided proximate an edge of the substrate on the back face of the substrate and/or on a recessed region on the side face of the substrate. The contact is positioned to be positioned proximate an electrical connection region of the underlying surface when the semiconductor light emitting device package is side mounted on the underlying surface. A conductive trace extends along the front face of the substrate and is electrically connected to the contact. A semiconductor light emitting device is mounted on the front face of the substrate and electrically connected to the conductive trace.

Abstract: A method of manufacturing an organic thin film pattern, the method including: forming a dummy organic thin film on a substrate; radiating light on the dummy organic thin film pattern the dummy organic thin film; forming a main organic thin film, having a sublimation temperature is higher than that of the dummy organic thin film, on the substrate and the patterned dummy organic thin film; and heating patterned the dummy organic thin film and the main organic thin film, to sublimate the dummy organic thin film and thereby pattern the main organic thin film.

Abstract: In a display apparatus and a method of manufacturing the display apparatus, a gate line, a data line, and a plurality of layers are formed on an array substrate on which a pixel area, a pad area, and a peripheral area are defined. During the forming processes of the gate line, the data line, and the layers, the gate line and the data line are partially exposed in the peripheral area, or contact portions formed on the gate line and the data line in the peripheral area are exposed. Thus, the gate line and the data line may be tested using the contact portions as electrical terminals during the manufacturing process of the display apparatus.

Abstract: A semiconductor light emitting device of the present invention includes a plurality of light emitting elements, a package body for storing the light emitting elements, wiring patterns being electrically connected to the light emitting elements, and Au wires for electrically connecting the light emitting elements and the wiring patterns, the package body including mounting concave portions for storing the respective light emitting elements, and storing concave portion for storing the mounting concave portions and the Au wires, the mounting concave portions being aligned on a linear line and spaced from each other with an equal pitch.

Abstract: The present invention is directed to an electrical device that comprises a first and a second fiber having a core of thermoelectric material embedded in an electrically insulating material, and a conductor. The first fiber is doped with a first type of impurity, while the second fiber is doped with a second type of impurity. A conductor is coupled to the first fiber to induce current flow between the first and second fibers.

Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a first film formed of an inorganic material, a second film that is formed of an organic material and formed on the first film, and includes a first surface and a second surface facing each other and lateral surfaces at boundaries of the first surface and the second surface, with the first surface contacting the first film, a third film that is formed of an inorganic material and covers the second surface and lateral surfaces of the second film, with a first sealing region contacting the first film being formed at a boundary between the second film and the third film, an organic light-emitting unit that is disposed on the third film to overlap with the second film, and a fourth film that covers the organic light-emitting unit, with a second sealing region contacting the third film being formed at a boundary of the fourth film.

Abstract: A light-emitting device includes a light source including an element mounting substrate, an LED element mounted thereon by flip-chip connection and a sealing portion for sealing the LED element on the element mounting substrate, and a light guide plate including a housing hole for housing the light source. The housing hole extends from one surface side to another surface side of the light guide plate and an area of an inner surface thereof on which light is incident from the light source is parallel to a thickness direction of the light guide plate. The light source is housed in the housing hole so that the element mounting substrate is located on the other surface side of the light guide plate, emits light toward the one surface side of the light guide plate in the housing hole and the inner surface side of the housing hole, and has an optical axis parallel to the thickness direction of the light guide plate.

Abstract: A color filter using a surface plasmon includes a metal layer; and a transmissive pattern formed in the metal layer, the transmissive pattern comprising a plurality of sub-wavelength holes having a period, wherein a desired color of light is output by selectively transmitting light of a specific wavelength by using the surface plasmon, and the plurality of sub-wavelength holes are arranged in a triangular lattice having a predetermined number of nearest neighboring holes with respect to a central hole.

Abstract: Semiconductor material is formed on a host substrate of a material exhibiting optical transparency with an intervening radiation lift off layer. A transfer device, intermediate substrate or target substrate is brought into adhesive contact with the semiconductor material and the radiation lift off layer is irradiated to weaken it, allowing the semiconductor material to be transferred off the host substrate. Electronic devices may be formed in the semiconductor layer while it is attached to the host substrate or the intermediate substrate.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting diode chip comprising a plurality of light-emitting diode units and at least one electrical connecting layer. The light-emitting diode units are electrically connected with each other through the electrical connecting layer. Each of the light-emitting diode units comprises a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting device further comprises a bonding layer; and a carrier bonded to the light-emitting diode chip by the bonding layer. The electrical connecting layer is formed between the light-emitting diode units and the bonding layer.

Abstract: A method for manufacturing a reflective surface sub-assembly for a light-emitting device, comprising a substrate, at least one area reserved for placement of a light-emitting device assembly on the substrate, and a diffusive reflective layer applied on selected regions on the substrate, wherein if the light-emitting device assembly were placed onto the at least one area then the diffusive reflective layer would reflect photons emitted by the light-emitting device assembly is disclosed.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a plurality of semiconductor stacked bodies on a first major surface of a support substrate with a gap between two neighboring semiconductor stacked bodies. The semiconductor stacked bodies includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The method can bond the plurality of semiconductor stacked bodies to one other support substrate with a bonding member. In addition, the method can remove the support substrate from the plurality of semiconductor stacked bodies by irradiating the plurality of semiconductor stacked bodies with a laser light from a second major surface of the support substrate on a side opposite to the first major substrate. The bonding member is not irradiated with the laser light.

Abstract: A LED Chip-on-Board (COB) module comprises a plurality of LED die arranged on a substrate in one or more radially concentric rings about a centre point such that each LED die is azimuthally offset from neighbouring LED die. The module includes thermal conduction pads each having lateral dimensions at least as large as the combined lateral dimensions of the LED die attached to it and a total surface area at least five times larger than the total surface area of all the LED die attached to it. At the same time, the total light emission area of the module is no greater than four times larger than the combined total surface emission area of all the individual LED die disposed on the substrate. A variety of configurations are possible subject to these criteria, which permit good packing density for enhanced brightness whilst ensuring optimal heat transfer. A method of manufacturing the module is also provided.

Abstract: There is provided an organic light emitting display device including a first substrate; an organic light emitting unit formed on the first substrate; a second substrate disposed on the organic light emitting unit; and an adhesive unit for adhering the first substrate and the second substrate to each other, wherein the adhesive unit includes a sealant, and particles that are arranged in the sealant so as to block penetration of external impurities. There is further provided a method of manufacturing the organic light emitting display device.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: An active matrix substrate of a display device of the present invention includes a glass substrate (30), a plurality of connection terminals (41) formed on the surface of the glass substrate and arranged in parallel with one another at an equal interval, and an interlayer insulating film (38) covering the plurality of connection terminals. The edge of the interlayer insulating film is so formed that tips of the plurality of connection terminals are exposed. An opening (50) is formed along the edge of the interlayer insulating film between two adjacent connection terminals. It is possible to avoid formation of pixel electrode material residue near the edge of the interlayer insulating film when a pixel electrode is formed by photo-etching through the formation of a pixel electrode material layer and a photosensitive resist layer on the interlayer insulating film.

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane.

Abstract: An LED chip package structure with high-efficiency light-emitting effect includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate body, and a positive electrode trace and a negative electrode trace respectively formed on the substrate body. The light-emitting unit has a plurality of LED chips arranged on the substrate body. Each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected with the positive electrode trace and the negative electrode trace of the substrate unit. The package colloid unit has a plurality of package colloids respectively covered on the LED chips. Each package colloid has a colloid cambered surface and a colloid light-emitting surface respectively formed on a top surface and a front surface thereof.

Abstract: An organic light emitting diode (OLED) display includes: a first substrate including an OLED; a second substrate that is opposite to the first substrate; a sealant that is positioned between the first substrate and the second substrate and that couples the first substrate and the second substrate; and a sealant contraction reinforcement auxiliary structure that is positioned in at least one of a position between the first substrate and the sealant and a position between the second substrate and the sealant.

Abstract: An organic light emitting diode (OLED) display and a method of manufacturing the same are provided. The OLED display includes: a substrate main body; an OLED that is formed on the substrate main body; a hydrophilic polymer layer that is formed on the substrate main body to cover the OLED and that includes a hydrophilic surface having an angle of contact within a range of larger than 0° and smaller than or equal to 50°; and an inorganic protective layer that is formed on the hydrophilic surface of the hydrophilic polymer layer.

Abstract: Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.

Abstract: A method of manufacturing a light-emitting device includes a hole forming process for forming a through-hole that continues from a front surface to a back surface of a mounting substrate, a pattern forming process for continuously forming a circuit pattern on an inner surface of the through-hole in the mounting substrate, from an end portion of the through-hole on the front surface of the mounting substrate to a mounting portion of a light-emitting element, and on a periphery of the through-hole on the back surface of the mounting substrate, a mounting process for mounting the light-emitting element on the mounting portion, and a hot pressing process in that an inorganic material softened by heating is placed on the surface of the mounting substrate and is advanced into the through-hole while sealing the light-emitting element by pressing and bonding the inorganic material to the surface of the mounting substrate.

Abstract: A device for emitting various colors by mixing light from a first light emitting diode and light from a second light emitting diode comprises, according to one embodiment: the first light emitting diode including an LED chip comprising InGaN and being capable of emitting a blue color light, and a phosphor capable of absorbing a part of the blue color light and emitting a yellow color light, the blue color light and the yellow color light being mixed to make white-color light; the second light emitting diode being capable of emitting red, green or blue color light; and a drive circuit for separately driving each of the first and second light emitting diode.

Abstract: The present invention relates to a method for encapsulating a substrate, which comprises: (a1) providing a substrate with a plurality of chips mounted on a top of the substrate; (b1) compressing a dry film photoresist on the top side of the substrate to form a photoresist layer; (c1) exposing the photoresist layer to a light source through a mask to form unexposed photoresist regions and exposed photoresist regions; (d1) developing the photoresist layer to uncover underlying portions of the unexposed photoresist regions; (e1) molding the top side of the substrate with a molding material; (f1) curing the molding material; and (g1) removing the unexposed photoresist regions from the substrate with a photoresist-removing agent.

Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.

Abstract: A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements.

Abstract: An LED lamp can be used as a light source of a lighting device. The LED lamp can be combined with a reflecting mirror formed as a paraboloid of revolution, to obtain desired light distribution characteristics, as with a conventional light source. The emission surface of the LED lamp for the light source of the lighting device can be rectangular, and the ratio between a short side and a long side thereof is set in a range of 1:2 to 1:6. Therefore, it is possible to form a light distribution pattern similar to that of a filament, which is conventionally used as an emission source. It is also possible to use almost all light emitted from the LED lamp as illumination light.