Optical Waveguide Structure Patents (Class 438/31)
  • Patent number: 9979160
    Abstract: An optical circulator is a device that routes optical pulses from port to port in a predetermined manner, e.g. in a 3-port optical circulator, optical pulses entering port 1 are routed out of port 2, while optical pulses entering port 2 exit out of port 3 and optical pulses fed into port 3 exit out of port 3. Currently such an optical circulator is made of discrete components such as magnetooptic garnets, rare-earth magnets and optical polarizers that are packaged together with fiber optic elements. Disclosed herein is a different kind of optical circulator that is monolithically integrated on a single semiconductor substrate and that is applicable for the routing of optical pulses. The embodied invention will enable photonic integrated circuits to incorporate on-chip optical circulator functionality thereby allowing much more complex optical designs to be implemented monolithically.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: May 22, 2018
    Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Demetrios Christodoulides, Patrick L. LiKamWa, Parinaz Aleahmad, Ramy El-Ganainy
  • Patent number: 9853179
    Abstract: Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: December 26, 2017
    Assignee: International Business Machines Corporation
    Inventors: Barry P. Linder, Jason S. Orcutt
  • Patent number: 9791642
    Abstract: A chip packaging includes a first part comprising a support; and a core polymer layer transversally structured so as to exhibit distinct residual portions comprising: first waveguide cores each having a first height and disposed within said inner region; and one or more first alignment structures disposed within said outer region. A second part of the packaging comprises: second waveguide cores, each having a same second height; and one or more second alignment structures complementarily shaped with respect to the one or more first alignment structures, and wherein, the first part structured such that said inner region is recessed with respect to the outer region, to enable: the second waveguide cores to contact the first waveguide cores; and the one or more second alignment structures to respectively receive, at least partly, the one or more first alignment structures. The invention is further directed to related passive alignment methods.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: October 17, 2017
    Assignee: International Business Machines Corporation
    Inventors: Roger F. Dangel, Daniel S. Jubin, Antonio La Porta, Bert J. Offrein
  • Patent number: 9755100
    Abstract: Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: September 5, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Barry P. Linder, Jason S. Orcutt
  • Patent number: 9570420
    Abstract: Methods and apparatus are disclosed for wirelessly communicating among integrated circuits and/or functional modules within the integrated circuits. A semiconductor device fabrication operation uses a predetermined sequence of photographic and/or chemical processing steps to form one or more functional modules onto a semiconductor substrate. The functional modules are coupled to an integrated waveguide that is formed onto the semiconductor substrate and/or attached thereto to form an integrated circuit. The functional modules communicate with each other as well as to other integrated circuits using a multiple access transmission scheme via the integrated waveguide. One or more integrated circuits may be coupled to an integrated circuit carrier to form Multichip Module. The Multichip Module may be coupled to a semiconductor package to form a packaged integrated circuit.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 14, 2017
    Assignee: Broadcom Corporation
    Inventors: Jesus Alfonso Castaneda, Arya Reza Behzad, Ahmadreza Rofougaran, Sam Ziqun Zhao, Michael Boers
  • Patent number: 9381057
    Abstract: A skin surface is treated with RF energy (e.g., unipolar, monopolar, bipolar or multipolar RF delivery). A first semiconductive cap disposed on a first distal end of a first electrode and, optionally, a second semiconductive cap disposed on a second distal end of a second electrode are applied to the skin surface. RF energy is delivered from the first electrode and the second electrode through the first semiconductive cap and the second semiconductive cap, respectively, through the skin surface. The first semiconductive cap and/or the second semiconductive cap have an electrical conductivity matched or substantially matched to the skin's electrical conductivity (e.g., about 0.1 to about 2 times that of the skin).
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: July 5, 2016
    Assignee: Candela Corporation
    Inventors: Kevin T. Schomacker, Avner Rosenberg
  • Patent number: 9316784
    Abstract: An MCM may include a single optical routing layer that provides point-to-point connectivity among N chips in the MCM, such as all-to-all connectivity or full-mesh point-to-point connectivity. Moreover, the optical routing layer may include: N optical waveguides optically coupled to the N chips and a cyclic de-multiplexer, optically coupled to the N optical waveguides, that routes optical signals among the N optical waveguides without optical-waveguide crossing in the optical routing layer. For example, the cyclic de-multiplexer may include: an array-waveguide-grating (AWG) wavelength router and/or an echelle-grating wavelength router.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: April 19, 2016
    Assignee: ORACLE INTERNATIONAL CORPORATION
    Inventors: Ashok V. Krishnamoorthy, Xuezhe Zheng
  • Patent number: 9268094
    Abstract: Optical system has a passive optical chip on the top surface with a first wave guide and a laser diode arranged on the edge of the chip. The chip has a reflecting structure on the top surface at the wavelength of the laser diode and a thin layer portion powered by the laser diode and covering a part of the first wave guide. The first wave guide input is linked to the laser diode, passing through the reflecting structure. The chip has a second wave guide on the top surface, a first coupler formed by two first portions of the first wave guide not covered by the thin layer portion and situated on either side of the thin layer portion along the optical path, and a second coupler formed by two second portions, respectively of the first and second wave guides, not covered by the thin layer portion.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: February 23, 2016
    Assignee: Thales
    Inventors: Thomas Nappez, Philippe Rondeau, Jean-Pierre Schlotterbeck, Elise Ghibaudo, Jean-Emmanuel Broquin
  • Patent number: 9246053
    Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: January 26, 2016
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Xinghua Liang, Te-Ling Hsia, Chenke Hsu, Chih-Wei Chao, Shuiqing Li
  • Patent number: 9224777
    Abstract: A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 29, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tadashi Sawayama, Hiroshi Ikakura, Takaharu Kondo, Toru Eto
  • Patent number: 9177992
    Abstract: An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the LED portion, a central area of the LED is etched away to expose a semiconductor surface in which the transistor regions are formed. A conductor connects the transistor in series with the LED. Another node of the transistor is electrically coupled to an electrode on the bottom surface of the substrate. In one embodiment, an anode of the LED is connected to one terminal of the module, one current carrying node of the transistor is connected to a second terminal of the module, and the control terminal of the transistor is connected to a third terminal of the module.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: November 3, 2015
    Assignee: Nthdegree Technologies Worldwide Inc.
    Inventors: Richard Austin Blanchard, Bradley Steven Oraw
  • Patent number: 9110201
    Abstract: This invention relates to a metamaterial structure, which can simultaneously cause resonance at a wavelength of light that excites quantum dots and a wavelength of light produced by the quantum dots in a local space where quantum dots are located. The metamaterial structure, which can resonate with two wavelengths unlike conventional metamaterial structures that resonate with a single wavelength, includes a substrate, a quantum dot layer, and a resonance layer formed between the substrate and the quantum dot layer and having two rectangular holes which are formed to cross each other so that resonance occurs at two different resonance wavelengths.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: August 18, 2015
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Choongi Choi, Jongho Choe
  • Patent number: 9099624
    Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: August 4, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wan Ho Lee, Gi Bum Kim, Si Hyuk Lee
  • Patent number: 9082934
    Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: July 14, 2015
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Peng-Yi Wu, Wen-Yu Lin, Chih-Pang Ma, Tzu-Chien Hong, Chia-Hui Shen
  • Patent number: 9054498
    Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: June 9, 2015
    Assignee: The Regents of the University of California
    Inventors: Daniel A. Cohen, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 9048618
    Abstract: A long wavelength, short cavity laser can include: an active region or gain cavity having a length from about 10 microns to about 150 microns; a gap region adjacent to the active region and having a gap length that is less than 30 microns or less than the length of the active region; and a distributed Bragg reflector (“DBR”) region having a grating with a kappa of at least about 200 cm?1, wherein the gap region is between the active region and the DBR region, and wherein the laser lases at a long wavelength side of a Bragg peak of the laser. The laser can have a second DBR region opposite of the first DBR region.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: June 2, 2015
    Assignee: FINISAR CORPORATION
    Inventor: Yasuhiro Matsui
  • Publication number: 20150146755
    Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
    Type: Application
    Filed: May 16, 2014
    Publication date: May 28, 2015
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: In Gyoo KIM, Sang Hoon KIM, Jaegyu PARK, Gyungock KIM, Ki Seok JANG
  • Patent number: 9040329
    Abstract: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: May 26, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventors: Chia-Hui Shen, Tzu-Chien Hung
  • Patent number: 9040328
    Abstract: A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
    Type: Grant
    Filed: May 4, 2014
    Date of Patent: May 26, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventors: Ya-Wen Lin, Shih-Cheng Huang, Po-Min Tu, Chia-Hung Huang, Shun-Kuei Yang
  • Patent number: 9040327
    Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: May 26, 2015
    Assignee: The Regents of the University of California
    Inventors: Daniel F. Feezell, Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20150140710
    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
    Type: Application
    Filed: December 3, 2014
    Publication date: May 21, 2015
    Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
  • Patent number: 9035409
    Abstract: A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/?m at the wavelength of 1600 nm.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: May 19, 2015
    Assignee: Forelux Inc.
    Inventor: Yun-Chung Na
  • Publication number: 20150132002
    Abstract: There is provided an integrated laser. The integrated laser includes a semiconductor waveguide having a first section, a second section and a third section. The integrated laser further includes an active region formed on the third section of the semiconductor waveguide, the active region configured for generating light, and a coupler formed on the second section of the semiconductor waveguide, the coupler configured for coupling said light between the semiconductor waveguide and the active region. In particular, the first section comprises a multi-branch splitter having a ring structure formed between two branches of the multi-branch splitter for emission wavelength control of the integrated laser. Preferably, the multi-branch splitter is a Y-branch splitter and the ring structure is formed in a space between two branches of the Y-branch splitter. There is also provided a method of fabrication thereof, an integrated tunable laser and an integrated tunable laser system.
    Type: Application
    Filed: November 13, 2014
    Publication date: May 14, 2015
    Inventors: Vivek Krishnamurthy, Qian Wang, Jing Pu
  • Publication number: 20150132877
    Abstract: A method for producing optical semiconductor devices includes: forming a stacked semiconductor layer on a device substrate to provide an epitaxial substrate having a size corresponding to a section arrangement; forming, on the epitaxial substrate, a mask having a pattern for a semiconductor mesa and for a trench of at least one optical semiconductor device, a width of the trench in the pattern being determined according to a trench width map in which trench width is based upon an in-plane distribution of the thickness of a resin layer of the at least one device, and upon a correlation between the thickness of the resin layer and the trench width; forming a trench structure including the semiconductor mesa and the trench by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.
    Type: Application
    Filed: January 26, 2015
    Publication date: May 14, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Takamitsu KITAMURA, Hideki YAGI
  • Patent number: 9029890
    Abstract: A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: May 12, 2015
    Assignee: Epistar Corporation
    Inventors: Chung-Ying Chang, Dennis Wang, Jenq-Dar Tsay
  • Patent number: 9029176
    Abstract: The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: May 12, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventor: Hisashi Yano
  • Publication number: 20150123695
    Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 7, 2015
    Applicant: BinOptics Corporation
    Inventors: Alex A. BEHFAR, Malcolm R. GREEN, Cristian STAGARESCU
  • Patent number: 9023677
    Abstract: A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: May 5, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Naoko Konishi, Hideki Yagi, Ryuji Masuyama, Yoshihiro Yoneda
  • Publication number: 20150115219
    Abstract: A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
    Type: Application
    Filed: October 3, 2014
    Publication date: April 30, 2015
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Su Hwan OH, Min Su KIM
  • Patent number: 9018081
    Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
    Type: Grant
    Filed: November 23, 2013
    Date of Patent: April 28, 2015
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Mark Albert Crowder, Changqing Zhan, Paul J. Schuele
  • Patent number: 9006727
    Abstract: An organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display having improved light extraction efficiency by forming both a first electrode and a second electrode as reflective electrodes to guide generated light to the side of a pixel, and a manufacturing method thereof.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: April 14, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Gee-Bum Kim, Won-Sang Park, Min-Woo Kim
  • Patent number: 9006751
    Abstract: A luminous vehicle glazing containing: a first sheet having a first and a second main face; a peripheral light source, the emitting face facing an injection side, which is a side of the second face; a surface diffusion extractor, which extracts the guided light via the first and/or the second main face, or a volume diffusion extractor in the first sheet; a fluid-tight cap, which covers the peripheral light source and is impermeable to liquid water or water vapor, wherein the cap is a facial cap, faces the second face, joined by a fastening element, and associated with an interfacial sealing element.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: April 14, 2015
    Assignee: Saint-Gobain Glass France
    Inventors: Christophe Kleo, Bastien Grandgirard, Alexandre Richard, Adele Verrat-Debailleul
  • Patent number: 9000415
    Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: April 7, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang chil Lee, Jae Hun Kim, Hwan Hui Yun
  • Publication number: 20150092808
    Abstract: A highly-coherent chip-based laser generating system includes a disk resonator incorporating a wedge structure fabricated from a silicon dioxide layer of a chip. The disk resonator is operable to generate a highly-coherent laser from a low-coherence optical pump input provided at an optical power level as low as 60 ?W. The disk resonator is fabricated with sub-micron cavity size control that allows generation of a highly-coherent laser using a controllable Stimulated Brillouin Scattering process that includes matching of a cavity free-spectral-range to a Brillouin shift frequency in silica. While providing several advantages due to fabrication on a chip, the highly-coherent laser produced by the disk resonator may feature a Schawlow-Townes noise level as low as 0.06 Hz2/Hz (measured with the coherent laser at a power level of about 400 ?W) and a technical noise that is at least 30 dB lower than the low-coherence optical pump input.
    Type: Application
    Filed: June 15, 2012
    Publication date: April 2, 2015
    Inventors: Jiang LI, Hansuek LEE, Tong CHEN, Kerry VAHALA
  • Publication number: 20150092799
    Abstract: An optical semiconductor device comprises: a first insulating film provided on a semiconductor layer; a heater provided on the first insulating film; a second insulating film provided on the heater; and an electrode provided on the heater. The electrode extends on the second insulating film; the electrode is in contact with the heater; the second insulating film includes a first region on which the electrode is located; and a thickness of the first region of the second insulating film is greater than that of the first insulating film.
    Type: Application
    Filed: September 29, 2014
    Publication date: April 2, 2015
    Inventors: Taro HASEGAWA, Toshiyuki TAGUCHI
  • Patent number: 8993999
    Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeyuki Takagi, Hidehiko Yabuhara
  • Publication number: 20150086153
    Abstract: In a method of manufacturing an optical device including an optical waveguide having a core, a cladding and a light input/output part through which a light beam is input or output, a substrate is prepared which is provided with a uniform thickness of single-crystalline film having its constituent atoms forming a diamond lattice structure and its surface being neither the (111) plane nor its equivalent planes. In the single-crystalline film, a precursor structure is formed which has a precursor of light input/output part. A mask is formed such as to expose the precursor with the remaining part covered. The structure is immersed into an alkaline solution for wet etching with the (111) planes used as etch-stop planes.
    Type: Application
    Filed: September 10, 2014
    Publication date: March 26, 2015
    Applicants: OKI ELECTRIC INDUSTRY CO., LTD., National Institute of Advanced Industrial Science and Technology, Photonics Electronics Technology Research Association
    Inventors: Hideki ONO, Tsuyoshi HORIKAWA, Naoki HIRAYAMA
  • Patent number: 8982921
    Abstract: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: March 17, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Ruiyu Fang, Giammarco Rossi, Alessandro Stano, Giuliana Morello, Paola-Ida Gotta, Roberto Paoletti, Pietro Della Casa, Giancarlo Meneghini
  • Patent number: 8981413
    Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: March 17, 2015
    Assignee: Rohm Co., Ltd.
    Inventor: Akira Obika
  • Patent number: 8980665
    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: March 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata
  • Publication number: 20150063753
    Abstract: The present invention includes an optical waveguide with a grating and a method of making the same for increasing the effectiveness of the grating. In one example, the grating is at least partially covered by a liner layer disposed on at least a portion of a grating; and a cover layer disposed on the liner layer, wherein a first material selected for the core and ridges and a second material selected for the liner layer are selected to provide a difference in the index of refraction between the first and second material that is sufficient to provide a contrast therebetween.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 5, 2015
    Inventors: Gary A. Evans, Jerome K. Butler, Jay B. Kirk, Ruo-Hua He, Jin Yao, Guoliang Li, Xuezhe Zheng, Ashok V. Krishnamoorthy
  • Patent number: 8970013
    Abstract: A semiconductor light-receiving element includes: a light-receiving portion that is provided on a semi-insulating substrate and has a mesa shape in which semiconductor layers are laminated; a lamination structure of insulating films that is provided on a part of a side face of the light-receiving portion and has a structure in which a first insulating film comprised of a silicon nitride film, a second insulating film comprised of a silicon oxynitride film and a third insulating film comprised of a silicon nitride film are laminated in contact with each other; and a resin film that is provided adjacent to the light-receiving portion, the resin film being sandwiched in or between any of the first insulating film, the second insulating film and the third insulating film.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: March 3, 2015
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventors: Ryuji Yamabi, Yoshifumi Nishimoto
  • Patent number: 8971674
    Abstract: An optical device with high thermal tuning efficiency is described. This optical device may be implemented using a tri-layer structure (silicon-on-insulator technology), including: a substrate, a buried-oxide layer and a semiconductor layer. In particular, a thermally tunable optical waveguide may be defined in the semiconductor layer. Furthermore, a portion of the substrate under the buried-oxide layer and substantially beneath a location of the thermally tunable optical waveguide is fabricated so that a portion of the buried-oxide layer is exposed. In this way, the thermal impedance between the thermally tunable optical waveguide and an external environment is increased, and power consumption associated with thermal tuning of the optical waveguide is reduced.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: March 3, 2015
    Assignee: Oracle International Corporation
    Inventors: Ivan Shubin, John E. Cunningham, Xuezhe Zheng, Guoliang Li, Ashok V. Krishnamoorthy
  • Patent number: 8969113
    Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: March 3, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventor: James W. Raring
  • Patent number: 8958667
    Abstract: An optical bus (130) of an integrated circuit (100) comprises: a polymer waveguide (112), a micromirror (114, 116), and an optical coupler (120). The polymer waveguide (112) is disposed in a via (110) formed through at least one die layer (102, 104, 106) of the integrated circuit (100) comprising an active circuit (210). The micromirror (114) is disposed adjacent to the via (110) and optically coupled to the polymer waveguide (112). The optical coupler (120) is connected to the polymer waveguide (112) to couple the active circuit (210) to the optical bus (130). A stacked integrated circuit (100) is described comprising such an optical bus (130). A method (800) of fabricating a rear 45° micromirror on a silicon substrate that can be used in the optical bus (130) is also described. Furthermore, alignment/lock mechanisms for use in a stacked integrated circuit comprising first and second silicon substrates are described.
    Type: Grant
    Filed: July 4, 2011
    Date of Patent: February 17, 2015
    Inventors: Chee Yee Kwok, Aron Michael, Yiwei Xu
  • Publication number: 20150043867
    Abstract: A method for manufacturing a semiconductor optical device includes the steps of growing a stacked layer including lower and upper core layers, a first upper region including a non-doped layer, a second upper region including a p-type layer, and a cap layer; forming an upper mesa by etching the stacked layer; selectively etching the cap layer in the upper mesa on the first and second regions; forming a mask on the upper mesa in the second and third regions; and etching the upper mesa using the mask so as to form first to fourth mesa portions. The first and fourth mesa portions are formed by etching the first and second upper regions, and the second upper region and the cap layer, respectively. The second and third mesa portions are formed by etching the first and second upper regions, and the second upper region and the cap layer, respectively.
    Type: Application
    Filed: August 8, 2014
    Publication date: February 12, 2015
    Inventors: Naoya KONO, Hideki YAGI, Takamitsu KITAMURA
  • Publication number: 20150041840
    Abstract: In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K.
    Type: Application
    Filed: January 16, 2013
    Publication date: February 12, 2015
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventor: Andreas Plößl
  • Publication number: 20150043603
    Abstract: Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t1, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t1?, 6×10?7 m<t1 and 0(m)<t1??0.5·t1 are satisfied.
    Type: Application
    Filed: September 4, 2012
    Publication date: February 12, 2015
    Inventors: Masaru Kuramoto, Rintaro Koda, Hideki Watanabe
  • Patent number: 8952400
    Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: February 10, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Myung Hoon Jung, Hyun chul Lim, Sul Hee Kim, Rak Jun Choi
  • Publication number: 20150036975
    Abstract: A substrate is composed of a first material. A photonic structure is composed of the first material connected to one or more support structures composed of the first material between the photonic structure and a surface of the substrate, with at least one of the support structures supporting a first section of a strip of the photonic structure. The first section has a width that is wider than a width of a second section of the strip and has a length that is at least about twice the width of the second section of the strip.
    Type: Application
    Filed: July 30, 2013
    Publication date: February 5, 2015
    Inventors: Michael J. Burek, Marko Loncar