Optical Waveguide Structure Patents (Class 438/31)
  • Patent number: 11079549
    Abstract: A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: August 3, 2021
    Assignee: Skorpios Technologies, Inc.
    Inventors: Majid Sodagar, Stephen B. Krasulick, John Zyskind, Paveen Apiratikul, Luca Cafiero
  • Patent number: 10985294
    Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: April 20, 2021
    Assignee: CreeLED, Inc.
    Inventor: Justin White
  • Patent number: 10971650
    Abstract: A light emitting device includes a stacked structure and a first insulating layer covering at least side surfaces of the stacked structure including a p-type and n-type semiconductor layers, a light emitting layer sandwiched between the p-type and n-type semiconductor layers, an n-type electrode on the n-type semiconductor layer, an n-type contact layer sandwiched between the n-type semiconductor layer and the n-type electrode, a p-type electrode on the p-type semiconductor layer, an n-type contact pad on the n-type electrode, a p-type contact pad on the p-type electrode, and a semiconductor reflector between the light emitting layer and the n-type contact layer including multiple periods, each period including at least a first layer and at least a second layer having a refractive index different from a refractive index of the first layer. The light emitting device could be applied to wide color gamut (WCG) backlight modules or ultra-thin backlight modules.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: April 6, 2021
    Assignee: Lextar Electronics Corporation
    Inventor: Shiou-Yi Kuo
  • Patent number: 10819085
    Abstract: A ridge structure (9) having a ridge lower part (6), a ridge upper part (8) above the ridge lower part (6) and having a larger width than the ridge lower part (6), is formed on a semiconductor substrate (1). A recess (11) of the ridge structure (9), where the ridge lower part (6) is laterally set back from the ridge upper part (8) due to a difference in width between the ridge upper part (8) and the ridge lower part t (6), is completely filled with an insulating film (10) by an atomic layer deposition method to form a protrusion (19) from the semiconductor substrate (1), the ridge structure (9), and the insulating film (10) without any step in a side face of the protrusion (19).
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: October 27, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventor: Tsutomu Yamaguchi
  • Patent number: 10725241
    Abstract: A spot-size converter includes: a support body that includes a main surface including a first to a fifth areas; a mesa structure that includes a first part on the first area and includes a second part on the second to the fourth areas; and an embedding structure that includes a first region and a second region in which a first and a second side-surfaces of the second part of the mesa structure are respectively embedded. The second part of the mesa structure includes a portion that has a width gradually decreasing in a direction from the third area toward the fifth area. The first region of the embedding structure extends along the first side-surface and terminates at one of the third and the fourth areas. The second region of the embedding structure extends along the second side-surface of the second part and is disposed on the fifth area.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: July 28, 2020
    Inventors: Naoya Kono, Takuo Hiratani, Masataka Watanabe
  • Patent number: 10615572
    Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: April 7, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Sven Gerhard, Christoph Eichler, Christian Rumbolz
  • Patent number: 10608142
    Abstract: A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: March 31, 2020
    Inventors: Jar-Yu Wu, Ching-Jang Su, Chun-Lung Tseng, Ching-Hsing Shen
  • Patent number: 10553816
    Abstract: According to one embodiment, a display device includes a display area, a first peripheral area, an organic insulating film. The display area is provided on a substrate and includes a plurality of organic electroluminescent (EL) elements aligned. The first peripheral area is provided on the substrate, around the display area. The organic insulating film is provided on the substrate and covers a circuit including a drive circuit driving the organic EL elements. The organic insulating film comprises a first groove provided in the organic insulating film, around the display area, in an area between the display area and the first peripheral area, and a dummy area to which at least one of functional materials of the organic EL elements is applied, on the first peripheral area.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: February 4, 2020
    Assignee: JOLED INC.
    Inventor: Isao Kamiyama
  • Patent number: 10431767
    Abstract: An organic light emitting display device can include an anode electrode disposed on a substrate; an auxiliary electrode disposed on the anode electrode, the auxiliary electrode having a first height and a second height being different from the first height; a bank disposed on one side of the auxiliary electrode and another side of the auxiliary electrode; an organic light emitting layer disposed on an upper surface of the auxiliary electrode in an opening area exposed by the bank; and a cathode electrode disposed on the organic light emitting layer, in which the auxiliary electrode has the first height in a covered area overlapping with the bank and the second height in the opening area exposed by the bank.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: October 1, 2019
    Assignee: LG DISPLAY CO., LTD.
    Inventor: JoungWon Woo
  • Patent number: 9979160
    Abstract: An optical circulator is a device that routes optical pulses from port to port in a predetermined manner, e.g. in a 3-port optical circulator, optical pulses entering port 1 are routed out of port 2, while optical pulses entering port 2 exit out of port 3 and optical pulses fed into port 3 exit out of port 3. Currently such an optical circulator is made of discrete components such as magnetooptic garnets, rare-earth magnets and optical polarizers that are packaged together with fiber optic elements. Disclosed herein is a different kind of optical circulator that is monolithically integrated on a single semiconductor substrate and that is applicable for the routing of optical pulses. The embodied invention will enable photonic integrated circuits to incorporate on-chip optical circulator functionality thereby allowing much more complex optical designs to be implemented monolithically.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: May 22, 2018
    Inventors: Demetrios Christodoulides, Patrick L. LiKamWa, Parinaz Aleahmad, Ramy El-Ganainy
  • Patent number: 9853179
    Abstract: Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: December 26, 2017
    Assignee: International Business Machines Corporation
    Inventors: Barry P. Linder, Jason S. Orcutt
  • Patent number: 9791642
    Abstract: A chip packaging includes a first part comprising a support; and a core polymer layer transversally structured so as to exhibit distinct residual portions comprising: first waveguide cores each having a first height and disposed within said inner region; and one or more first alignment structures disposed within said outer region. A second part of the packaging comprises: second waveguide cores, each having a same second height; and one or more second alignment structures complementarily shaped with respect to the one or more first alignment structures, and wherein, the first part structured such that said inner region is recessed with respect to the outer region, to enable: the second waveguide cores to contact the first waveguide cores; and the one or more second alignment structures to respectively receive, at least partly, the one or more first alignment structures. The invention is further directed to related passive alignment methods.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: October 17, 2017
    Assignee: International Business Machines Corporation
    Inventors: Roger F. Dangel, Daniel S. Jubin, Antonio La Porta, Bert J. Offrein
  • Patent number: 9755100
    Abstract: Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: September 5, 2017
    Inventors: Barry P. Linder, Jason S. Orcutt
  • Patent number: 9570420
    Abstract: Methods and apparatus are disclosed for wirelessly communicating among integrated circuits and/or functional modules within the integrated circuits. A semiconductor device fabrication operation uses a predetermined sequence of photographic and/or chemical processing steps to form one or more functional modules onto a semiconductor substrate. The functional modules are coupled to an integrated waveguide that is formed onto the semiconductor substrate and/or attached thereto to form an integrated circuit. The functional modules communicate with each other as well as to other integrated circuits using a multiple access transmission scheme via the integrated waveguide. One or more integrated circuits may be coupled to an integrated circuit carrier to form Multichip Module. The Multichip Module may be coupled to a semiconductor package to form a packaged integrated circuit.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 14, 2017
    Assignee: Broadcom Corporation
    Inventors: Jesus Alfonso Castaneda, Arya Reza Behzad, Ahmadreza Rofougaran, Sam Ziqun Zhao, Michael Boers
  • Patent number: 9381057
    Abstract: A skin surface is treated with RF energy (e.g., unipolar, monopolar, bipolar or multipolar RF delivery). A first semiconductive cap disposed on a first distal end of a first electrode and, optionally, a second semiconductive cap disposed on a second distal end of a second electrode are applied to the skin surface. RF energy is delivered from the first electrode and the second electrode through the first semiconductive cap and the second semiconductive cap, respectively, through the skin surface. The first semiconductive cap and/or the second semiconductive cap have an electrical conductivity matched or substantially matched to the skin's electrical conductivity (e.g., about 0.1 to about 2 times that of the skin).
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: July 5, 2016
    Assignee: Candela Corporation
    Inventors: Kevin T. Schomacker, Avner Rosenberg
  • Patent number: 9316784
    Abstract: An MCM may include a single optical routing layer that provides point-to-point connectivity among N chips in the MCM, such as all-to-all connectivity or full-mesh point-to-point connectivity. Moreover, the optical routing layer may include: N optical waveguides optically coupled to the N chips and a cyclic de-multiplexer, optically coupled to the N optical waveguides, that routes optical signals among the N optical waveguides without optical-waveguide crossing in the optical routing layer. For example, the cyclic de-multiplexer may include: an array-waveguide-grating (AWG) wavelength router and/or an echelle-grating wavelength router.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: April 19, 2016
    Inventors: Ashok V. Krishnamoorthy, Xuezhe Zheng
  • Patent number: 9268094
    Abstract: Optical system has a passive optical chip on the top surface with a first wave guide and a laser diode arranged on the edge of the chip. The chip has a reflecting structure on the top surface at the wavelength of the laser diode and a thin layer portion powered by the laser diode and covering a part of the first wave guide. The first wave guide input is linked to the laser diode, passing through the reflecting structure. The chip has a second wave guide on the top surface, a first coupler formed by two first portions of the first wave guide not covered by the thin layer portion and situated on either side of the thin layer portion along the optical path, and a second coupler formed by two second portions, respectively of the first and second wave guides, not covered by the thin layer portion.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: February 23, 2016
    Assignee: Thales
    Inventors: Thomas Nappez, Philippe Rondeau, Jean-Pierre Schlotterbeck, Elise Ghibaudo, Jean-Emmanuel Broquin
  • Patent number: 9246053
    Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: January 26, 2016
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Xinghua Liang, Te-Ling Hsia, Chenke Hsu, Chih-Wei Chao, Shuiqing Li
  • Patent number: 9224777
    Abstract: A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 29, 2015
    Inventors: Tadashi Sawayama, Hiroshi Ikakura, Takaharu Kondo, Toru Eto
  • Patent number: 9177992
    Abstract: An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the LED portion, a central area of the LED is etched away to expose a semiconductor surface in which the transistor regions are formed. A conductor connects the transistor in series with the LED. Another node of the transistor is electrically coupled to an electrode on the bottom surface of the substrate. In one embodiment, an anode of the LED is connected to one terminal of the module, one current carrying node of the transistor is connected to a second terminal of the module, and the control terminal of the transistor is connected to a third terminal of the module.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: November 3, 2015
    Assignee: Nthdegree Technologies Worldwide Inc.
    Inventors: Richard Austin Blanchard, Bradley Steven Oraw
  • Patent number: 9110201
    Abstract: This invention relates to a metamaterial structure, which can simultaneously cause resonance at a wavelength of light that excites quantum dots and a wavelength of light produced by the quantum dots in a local space where quantum dots are located. The metamaterial structure, which can resonate with two wavelengths unlike conventional metamaterial structures that resonate with a single wavelength, includes a substrate, a quantum dot layer, and a resonance layer formed between the substrate and the quantum dot layer and having two rectangular holes which are formed to cross each other so that resonance occurs at two different resonance wavelengths.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: August 18, 2015
    Inventors: Choongi Choi, Jongho Choe
  • Patent number: 9099624
    Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: August 4, 2015
    Inventors: Wan Ho Lee, Gi Bum Kim, Si Hyuk Lee
  • Patent number: 9082934
    Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: July 14, 2015
    Inventors: Shih-Cheng Huang, Po-Min Tu, Peng-Yi Wu, Wen-Yu Lin, Chih-Pang Ma, Tzu-Chien Hong, Chia-Hui Shen
  • Patent number: 9054498
    Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: June 9, 2015
    Assignee: The Regents of the University of California
    Inventors: Daniel A. Cohen, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 9048618
    Abstract: A long wavelength, short cavity laser can include: an active region or gain cavity having a length from about 10 microns to about 150 microns; a gap region adjacent to the active region and having a gap length that is less than 30 microns or less than the length of the active region; and a distributed Bragg reflector (“DBR”) region having a grating with a kappa of at least about 200 cm?1, wherein the gap region is between the active region and the DBR region, and wherein the laser lases at a long wavelength side of a Bragg peak of the laser. The laser can have a second DBR region opposite of the first DBR region.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: June 2, 2015
    Inventor: Yasuhiro Matsui
  • Publication number: 20150146755
    Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
    Type: Application
    Filed: May 16, 2014
    Publication date: May 28, 2015
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: In Gyoo KIM, Sang Hoon KIM, Jaegyu PARK, Gyungock KIM, Ki Seok JANG
  • Patent number: 9040328
    Abstract: A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
    Type: Grant
    Filed: May 4, 2014
    Date of Patent: May 26, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventors: Ya-Wen Lin, Shih-Cheng Huang, Po-Min Tu, Chia-Hung Huang, Shun-Kuei Yang
  • Patent number: 9040329
    Abstract: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: May 26, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventors: Chia-Hui Shen, Tzu-Chien Hung
  • Patent number: 9040327
    Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: May 26, 2015
    Assignee: The Regents of the University of California
    Inventors: Daniel F. Feezell, Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20150140710
    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
    Type: Application
    Filed: December 3, 2014
    Publication date: May 21, 2015
    Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
  • Patent number: 9035409
    Abstract: A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/?m at the wavelength of 1600 nm.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: May 19, 2015
    Assignee: Forelux Inc.
    Inventor: Yun-Chung Na
  • Publication number: 20150132002
    Abstract: There is provided an integrated laser. The integrated laser includes a semiconductor waveguide having a first section, a second section and a third section. The integrated laser further includes an active region formed on the third section of the semiconductor waveguide, the active region configured for generating light, and a coupler formed on the second section of the semiconductor waveguide, the coupler configured for coupling said light between the semiconductor waveguide and the active region. In particular, the first section comprises a multi-branch splitter having a ring structure formed between two branches of the multi-branch splitter for emission wavelength control of the integrated laser. Preferably, the multi-branch splitter is a Y-branch splitter and the ring structure is formed in a space between two branches of the Y-branch splitter. There is also provided a method of fabrication thereof, an integrated tunable laser and an integrated tunable laser system.
    Type: Application
    Filed: November 13, 2014
    Publication date: May 14, 2015
    Inventors: Vivek Krishnamurthy, Qian Wang, Jing Pu
  • Publication number: 20150132877
    Abstract: A method for producing optical semiconductor devices includes: forming a stacked semiconductor layer on a device substrate to provide an epitaxial substrate having a size corresponding to a section arrangement; forming, on the epitaxial substrate, a mask having a pattern for a semiconductor mesa and for a trench of at least one optical semiconductor device, a width of the trench in the pattern being determined according to a trench width map in which trench width is based upon an in-plane distribution of the thickness of a resin layer of the at least one device, and upon a correlation between the thickness of the resin layer and the trench width; forming a trench structure including the semiconductor mesa and the trench by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.
    Type: Application
    Filed: January 26, 2015
    Publication date: May 14, 2015
    Inventors: Takamitsu KITAMURA, Hideki YAGI
  • Patent number: 9029176
    Abstract: The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: May 12, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventor: Hisashi Yano
  • Patent number: 9029890
    Abstract: A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: May 12, 2015
    Assignee: Epistar Corporation
    Inventors: Chung-Ying Chang, Dennis Wang, Jenq-Dar Tsay
  • Publication number: 20150123695
    Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 7, 2015
    Applicant: BinOptics Corporation
    Inventors: Alex A. BEHFAR, Malcolm R. GREEN, Cristian STAGARESCU
  • Patent number: 9023677
    Abstract: A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: May 5, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Naoko Konishi, Hideki Yagi, Ryuji Masuyama, Yoshihiro Yoneda
  • Publication number: 20150115219
    Abstract: A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
    Type: Application
    Filed: October 3, 2014
    Publication date: April 30, 2015
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Su Hwan OH, Min Su KIM
  • Patent number: 9018081
    Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
    Type: Grant
    Filed: November 23, 2013
    Date of Patent: April 28, 2015
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Mark Albert Crowder, Changqing Zhan, Paul J. Schuele
  • Patent number: 9006751
    Abstract: A luminous vehicle glazing containing: a first sheet having a first and a second main face; a peripheral light source, the emitting face facing an injection side, which is a side of the second face; a surface diffusion extractor, which extracts the guided light via the first and/or the second main face, or a volume diffusion extractor in the first sheet; a fluid-tight cap, which covers the peripheral light source and is impermeable to liquid water or water vapor, wherein the cap is a facial cap, faces the second face, joined by a fastening element, and associated with an interfacial sealing element.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: April 14, 2015
    Assignee: Saint-Gobain Glass France
    Inventors: Christophe Kleo, Bastien Grandgirard, Alexandre Richard, Adele Verrat-Debailleul
  • Patent number: 9006727
    Abstract: An organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display having improved light extraction efficiency by forming both a first electrode and a second electrode as reflective electrodes to guide generated light to the side of a pixel, and a manufacturing method thereof.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: April 14, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Gee-Bum Kim, Won-Sang Park, Min-Woo Kim
  • Patent number: 9000415
    Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: April 7, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang chil Lee, Jae Hun Kim, Hwan Hui Yun
  • Publication number: 20150092799
    Abstract: An optical semiconductor device comprises: a first insulating film provided on a semiconductor layer; a heater provided on the first insulating film; a second insulating film provided on the heater; and an electrode provided on the heater. The electrode extends on the second insulating film; the electrode is in contact with the heater; the second insulating film includes a first region on which the electrode is located; and a thickness of the first region of the second insulating film is greater than that of the first insulating film.
    Type: Application
    Filed: September 29, 2014
    Publication date: April 2, 2015
    Inventors: Taro HASEGAWA, Toshiyuki TAGUCHI
  • Publication number: 20150092808
    Abstract: A highly-coherent chip-based laser generating system includes a disk resonator incorporating a wedge structure fabricated from a silicon dioxide layer of a chip. The disk resonator is operable to generate a highly-coherent laser from a low-coherence optical pump input provided at an optical power level as low as 60 ?W. The disk resonator is fabricated with sub-micron cavity size control that allows generation of a highly-coherent laser using a controllable Stimulated Brillouin Scattering process that includes matching of a cavity free-spectral-range to a Brillouin shift frequency in silica. While providing several advantages due to fabrication on a chip, the highly-coherent laser produced by the disk resonator may feature a Schawlow-Townes noise level as low as 0.06 Hz2/Hz (measured with the coherent laser at a power level of about 400 ?W) and a technical noise that is at least 30 dB lower than the low-coherence optical pump input.
    Type: Application
    Filed: June 15, 2012
    Publication date: April 2, 2015
    Inventors: Jiang LI, Hansuek LEE, Tong CHEN, Kerry VAHALA
  • Patent number: 8993999
    Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeyuki Takagi, Hidehiko Yabuhara
  • Publication number: 20150086153
    Abstract: In a method of manufacturing an optical device including an optical waveguide having a core, a cladding and a light input/output part through which a light beam is input or output, a substrate is prepared which is provided with a uniform thickness of single-crystalline film having its constituent atoms forming a diamond lattice structure and its surface being neither the (111) plane nor its equivalent planes. In the single-crystalline film, a precursor structure is formed which has a precursor of light input/output part. A mask is formed such as to expose the precursor with the remaining part covered. The structure is immersed into an alkaline solution for wet etching with the (111) planes used as etch-stop planes.
    Type: Application
    Filed: September 10, 2014
    Publication date: March 26, 2015
    Applicants: OKI ELECTRIC INDUSTRY CO., LTD., National Institute of Advanced Industrial Science and Technology, Photonics Electronics Technology Research Association
    Inventors: Hideki ONO, Tsuyoshi HORIKAWA, Naoki HIRAYAMA
  • Patent number: 8980665
    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: March 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata
  • Patent number: 8981413
    Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: March 17, 2015
    Assignee: Rohm Co., Ltd.
    Inventor: Akira Obika
  • Patent number: 8982921
    Abstract: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: March 17, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Ruiyu Fang, Giammarco Rossi, Alessandro Stano, Giuliana Morello, Paola-Ida Gotta, Roberto Paoletti, Pietro Della Casa, Giancarlo Meneghini
  • Publication number: 20150063753
    Abstract: The present invention includes an optical waveguide with a grating and a method of making the same for increasing the effectiveness of the grating. In one example, the grating is at least partially covered by a liner layer disposed on at least a portion of a grating; and a cover layer disposed on the liner layer, wherein a first material selected for the core and ridges and a second material selected for the liner layer are selected to provide a difference in the index of refraction between the first and second material that is sufficient to provide a contrast therebetween.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 5, 2015
    Inventors: Gary A. Evans, Jerome K. Butler, Jay B. Kirk, Ruo-Hua He, Jin Yao, Guoliang Li, Xuezhe Zheng, Ashok V. Krishnamoorthy