Including Integrally Formed Optical Element (e.g., Reflective Layer, Luminescent Material, Contoured Surface, Etc.) Patents (Class 438/29)
  • Patent number: 10290632
    Abstract: Alternating Current (AC)-coupled switch and metal capacitor structures for nanometer or low metal layer count processes are provided. According to one aspect of the present disclosure, a switch and capacitor structure comprises a substrate comprising a device region with a Field Effect Transistor (FET) formed therein, the FET having a source terminal comprising a structure in a first metal layer and a drain terminal comprising a structure in the first metal layer, and a capacitor comprising a first plate and a second plate, the first plate comprising a structure in a second metal layer, the second metal layer being above the first metal layer, the structure of the first plate being electrically connected to the structure of the drain terminal, and the second plate comprising a structure in the second metal layer, the structure of the first plate spaced from the structure of the second plate.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: May 14, 2019
    Assignee: Qorvo US, Inc.
    Inventors: Baker Scott, George Maxim, Dirk Robert Walter Leipold, Marcus Granger-Jones
  • Patent number: 10267963
    Abstract: Provided are a wavelength conversion member and a wavelength conversion element which are capable of reducing the decrease in luminescence intensity with time and the melting of a component material when irradiated with light of a high-power LED or LD, and a light emitting apparatus using the wavelength conversion member or the wavelength conversion element. A wavelength conversion member contains, in % by mass, 70 to 99.9% inorganic phosphor particles and 0.1 to 30% easily sinterable ceramic particles, wherein the easily sinterable ceramic particles are interposed between the inorganic phosphor particles and the inorganic phosphor particles are bound together by the easily sinterable ceramic particles.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: April 23, 2019
    Assignee: NIPPON ELECTRIC GLASS CO., LTD.
    Inventors: Naoki Fujita, Tadahito Furuyama, Shunsuke Fujita
  • Patent number: 10251238
    Abstract: In various embodiments, a stretchable electroluminescent device may be provided. The electroluminescent device may include a first contact structure. The first contact structure may include an ionic conductor layer. The electroluminescent device may also include a second contact structure. The electroluminescent device may additionally include an emission layer between the first contact structure and the second contact structure. The emission layer may be configured to emit light when an alternating voltage is applied between the first contact structure and the second contact structure.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: April 2, 2019
    Assignee: NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Jiangxin Wang, Pooi See Lee, Guofa Cai
  • Patent number: 10211598
    Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: February 19, 2019
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Te-Chung Wang, Shiou-Yi Kuo, Jun-Rong Chen
  • Patent number: 10211083
    Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 19, 2019
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Goji Shiga, Fumiteru Asai
  • Patent number: 10192916
    Abstract: Methods of fabricating solid-state imaging devices having a flat microlens array are provided. The method includes providing a semiconductor substrate having a plurality of photoelectric conversion elements. A color filter layer is formed above the semiconductor substrate. A lens material layer is formed on the color filter layer. A hard mask having a lens-shaped pattern is formed on the lens material layer. The method further includes etching both the hard mask and the lens material layer to form a microlens with a flat top surface that is formed from the lens material layer, and to leave a portion of the hard mask on the flat top surface of the microlens. The method also includes removing the portion of the hard mask that remains on the microlens.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: January 29, 2019
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Tzu-Wei Huang, Ji-Hong Lin, Huang-Jen Chen
  • Patent number: 10181505
    Abstract: Disclosed is an AMOLED display panel structure, comprising a plurality of transversely scan lines which extend horizontally, a plurality of data lines which extend vertically and are insulated from the scan lines, switching lines of a same number of the scan lines which extend vertically, a plurality of row driving circuits coupled to the switching lines and a plurality of column driving circuits coupled to the data lines; one switching line is coupled to one scan line, one row driving circuit is coupled to a plurality of switching lines, one column driving circuits is coupled to a plurality of data lines; the row driving circuit and the column driving circuit are located in the lower border frame region; the left, right and upper frame regions are only used for package to achieve the ultra narrow border frames for all three sides of the AMOLED display panel.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: January 15, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Baixiang Han, Yuanchun Wu, Poyen Lu
  • Patent number: 10181480
    Abstract: A thin film transistor “TFT”) substrate includes a substrate, an active layer over the substrate, and first and second TFTs over the substrate. The active layer includes: a first drain region, a first channel region and a first source region, which function as a drain, a channel and a source of the first TFT: a first lightly doped region between the first drain region and the first channel region: a second lightly doped region between the first channel region and the first source region: and a second drain region, a second channel region and a second source region, which function as a drain, a channel and a source of the second TFT. An impurity concentration at the second drain or source region is lower than an impurity concentration at the first drain or source region and higher than an impurity concentration at the first or second channel region.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: January 15, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Sangho Park, Gyungsoon Park, Heerim Song, Donghwan Shim, Jungkyu Lee, Seunghwan Cho, Jonghyun Choi
  • Patent number: 10177272
    Abstract: A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: January 8, 2019
    Assignee: GENESIS PHOTONICS INC.
    Inventors: Shao-Ying Ting, Jing-En Huang
  • Patent number: 10146082
    Abstract: The present disclosure relates to a display device and a color filter. The color filter includes a dielectric layer and wire grid structures on the dielectric layer, each of the wire grid structures includes a first wire grid unit, a second wire grid unit, a third wire grid unit, and a fourth wire grid unit. The first wire grid unit, the second wire grid unit, the third wire grid unit, and the fourth wire grid unit respectively includes a plurality of wire grids spaced apart from each other. Grid-spaces of the first wire grid unit, the second wire grid unit, the third wire grid unit, and the fourth wire grid unit are different. With such configuration, the white CIE composited by the R sub-pixel, the G sub-pixel, and the B sub-pixel may be matched with the white CIE of the W sub-pixel.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: December 4, 2018
    Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
    Inventors: Guowei Zha, Hongqing Cui
  • Patent number: 10109659
    Abstract: A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.
    Type: Grant
    Filed: July 8, 2017
    Date of Patent: October 23, 2018
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Xiaowen Lv, Chihyuan Tseng, Chihyu Su, Hejing Zhang
  • Patent number: 10079330
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: September 18, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
  • Patent number: 10026882
    Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: July 17, 2018
    Assignees: EPISTAR CORPORATION, IMEC TAIWAN CO.
    Inventors: Guan Ru He, Jui-Hung Yeh, Kevin T. Y. Huang, Chih Chung Chen
  • Patent number: 9997680
    Abstract: A light emitting device includes a substrate, a light emitting element provided on the substrate, a first resin layer provided on the substrate to directly cover the light emitting element having a first side surface and a second side surface, and the first side surface and the second side surface differ from each other in inclination angle with respect to the substrate, and a second resin layer provided so as to surround side surfaces of the first resin layer.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: June 12, 2018
    Assignee: NICHIA CORPORATION
    Inventor: Tomonori Miyoshi
  • Patent number: 9985004
    Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: May 29, 2018
    Assignee: Bridgelux, Inc.
    Inventors: R. Scott West, Tao Tong, Mike Kwon, Michael Solomensky
  • Patent number: 9899593
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: February 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Moon Chul Lee, Cui Jing
  • Patent number: 9891488
    Abstract: A method for manufacturing an array substrate is provided. The array substrate, by providing a black matrix and a color resist layer on the array substrate and providing the color resist layer on the TFT layer, prevents bad influences on the color resist layer caused by a high temperature TFT process so as to provide a liquid crystal panel with improved displaying quality. The method includes, firstly, forming a black matrix on a substrate, and secondly, implementing a TFT manufacture process on the black matrix, and then forming a color resist layer after the TFT manufacture process. Accordingly, forming both the black matrix and the color resist layer on the array substrate can be achieved, where the color resist layer is formed after the TFT manufacture process to prevent bad phenomenon caused by the high temperature of the TFT process.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: February 13, 2018
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Liwang Song
  • Patent number: 9893243
    Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: February 13, 2018
    Assignee: Bridgelux, Inc.
    Inventors: R. Scott West, Yan Chai
  • Patent number: 9893039
    Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: February 13, 2018
    Assignee: Bridgelux, Inc.
    Inventors: R. Scott West, Tao Tong, Mike Kwon, Michael Solomensky
  • Patent number: 9876145
    Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: January 23, 2018
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Shiou-Yi Kuo, Wen-Yuan Fan
  • Patent number: 9834724
    Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: December 5, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyunki Kim, Shin Ae Jun, Eun Joo Jang, Yongwook Kim, Tae Gon Kim, Yuho Won, Taekhoon Kim, Hyo Sook Jang
  • Patent number: 9804459
    Abstract: The present invention provides an array substrate and a manufacture method thereof. The array substrate, by locating both a black matrix and a color resist layer on the array substrate, and locating the color resist layer on the TFT layer prevents the bad influence to the color resist layer from the high temperature TFT process, and accordingly to make the liquid crystal panel with higher display quality. The manufacture method of the array substrate, first forms a black matrix on the substrate, and second implements TFT manufacture process on the black matrix, and then forms a color resist layer after the TFT manufacture.
    Type: Grant
    Filed: February 8, 2015
    Date of Patent: October 31, 2017
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Liwang Song
  • Patent number: 9806110
    Abstract: An embodiment of the disclosed technology provides a pixel structure, comprising a TFT, a reflective region and a transmissive region, wherein the reflective region comprises a reflective region insulation layer, a reflection layer on the reflective region insulation layer and a reflective region pixel electrode on the reflection layer, and the transmissive region comprises a transmissive region pixel electrode, wherein the reflective region pixel electrode and the transmissive region pixel electrode form an integral structure, and the integral structure of the pixel electrodes is connected with the drain electrode of the TFT, wherein the organic layer in the reflective region is formed on an array substrate prior to a gate electrode of the TFT, and the reflection layer in the reflective region and the gate electrode of the TFT are formed in a same patterning process by using a same metal layer.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: October 31, 2017
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Guanbao Hui, Seungjin Choi, Weifeng Zhou, Feng Zhang
  • Patent number: 9786717
    Abstract: A method of manufacturing a photoelectric conversion device includes forming a wiring structure above a semiconductor substrate including a photoelectric converter, forming, by a plasma CVD method, a first insulating film which contains hydrogen, above an uppermost wiring layer in the wiring structure, performing, after formation of the first insulating film, first annealing in a hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, and the first insulating film, forming a second insulating film above the first insulating film after the first annealing, and performing, after formation of the second insulating film, second annealing in the hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, the first insulating film, and the second insulating film.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: October 10, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Koichi Tazoe
  • Patent number: 9768202
    Abstract: The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive TFT (T2). The switch TFT (T1) is constructed by a first source/a first drain (61), a first gate (21), and a first etching stopper layer (51), a first oxide semiconductor layer (41), a first gate isolation layer (31) sandwiched in between. The drive TFT (T2) is constructed by a second source/a second drain (62), a second gate (22), and a second oxide semiconductor layer (42), a first etching stopper layer (51), a second gate isolation layer (32) sandwiched in between. The electrical properties of the switch TFT (T1) and the drive TFT (T2) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: September 19, 2017
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Xiaowen Lv, Chihyuan Tseng, Chihyu Su, Hejing Zhang
  • Patent number: 9722181
    Abstract: Provided are a laminate including an organic material mask and a method for preparing an organic light emitting device using the same. The laminate includes a substrate; and a mask provided on the substrate and including an organic material.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: August 1, 2017
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Minsoo Kang, Hyunsik Park, Sehwan Son
  • Patent number: 9666754
    Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: May 30, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Hwan Park, Sam Mook Kang, Jun Youn Kim, Mi Hyun Kim, Joo Sung Kim, Young Jo Tak
  • Patent number: 9666657
    Abstract: A display device includes: a substrate; a static electricity shielding member formed on the substrate; a scan line formed on the substrate and transferring a scan signal; a data line and a driving voltage line intersecting the scan line, being insulated therefrom and each transferring a data signal and a driving voltage; a thin film transistor formed on the static electricity shielding member; a first sacrifice electrode connected to the static electricity shielding member; and a second sacrifice electrode positioned under the first sacrifice electrode to form a sacrifice capacitor.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: May 30, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventor: Kyong-Hun Cho
  • Patent number: 9666761
    Abstract: A light-emitting device includes a substrate that is capable of transmitting light, a conductive layer that includes a first conductive portion provided on the substrate and a second conductive portion which is provided on the substrate so as to be adjacent to the first conductive portion, The second conductive portion is thinner than the first conductive portion. A light emitting layer is provided on the first conductive portion. A first electrode is provided on the second conductive portion. A second electrode is provided on the light emitting layer. In some embodiments, a backside surface of the substrate may be processed to be optically rough so as to limit internal reflections.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: May 30, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsufumi Kondo, Kenji Fujimoto
  • Patent number: 9653692
    Abstract: The light emitting element includes a first electrode and a second electrode, between which a light emitting layer, a hole transporting layer provide in contact with the light emitting layer, an electron transporting layer provided in contact with the light emitting layer, and a mixed layer provided between the electron transporting layer and the second electrode. The mixed layer includes an electron transporting substance and a substance showing an electron donating property with respect to the electron transporting substance. The light emitting layer includes an organometallic complex represented in General Formula (1) and a host. R1 and R2 each represent an electron-withdrawing substituent group. R3 and R4 each represent any of hydrogen or an alkyl group having 1 to 4 carbon atoms. L represents any of a monoanionic ligand having a beta-diketone structure, a monoanionic bidentate chelating ligand having a carboxyl group, or a monoanionic bidentate chelating ligand having a phenolic hydroxyl group.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: May 16, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu Ohsawa, Hideko Inoue, Satoshi Seo, Satoko Shitagaki
  • Patent number: 9650567
    Abstract: A wavelength converter and a liquid crystal display having the same, the wavelength converter including a first pattern that converts a wavelength of light into red light, and a second pattern that converts a wavelength of light into green light. The first pattern and the second pattern are alternately disposed, and an optical path length La of each of the first pattern and the second pattern is given by Equation (1): La=(?a/2)×m, wherein La is an optical length of an a-th pattern, ?a is a wavelength of light converted by the a-th pattern, a is one or two, and m is a natural number.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: May 16, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun Hwa Song, Dong Hoon Kim, Sang Chul Byun, Sang Hoon Lee, Seung Hwan Chung, Han Moe Cha
  • Patent number: 9653437
    Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: May 16, 2017
    Assignee: Bridgelux, Inc.
    Inventors: R. Scott West, Tao Tong, Mike Kwon, Michael Solomensky
  • Patent number: 9640944
    Abstract: A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: May 2, 2017
    Assignee: FUJI XEROX CO., LTD.
    Inventors: Naoki Jogan, Jun Sakurai, Akemi Murakami, Takashi Kondo, Kazutaka Takeda, Junichiro Hayakawa
  • Patent number: 9607823
    Abstract: The method includes the steps of: a) providing a stack including, successively, a substrate, a silicide layer formed on the substrate, and a silicon nitride layer covering at least the silicide layer, b) etching predefined regions of the silicon nitride layer in such a way as to expose at least areas of the silicide layer intended to form the electrical contacts, and c) depositing a protective layer on at least the areas of the silicide layer exposed in step b), the method not including a step of exposing the stack to moisture between step b) and step c), in particular moisture from the ambient air.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: March 28, 2017
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Nicolas Posseme
  • Patent number: 9599857
    Abstract: A display and method of manufacture are described. The display may include a substrate including an array of pixels with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. An array of micro LED device pairs are mounted within each subpixel to provide redundancy. An array of wavelength conversion layers comprising phosphor particles are formed over the array of micro LED device pairs for tunable color emission spectrum.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: March 21, 2017
    Assignee: Apple Inc.
    Inventors: Andreas Bibl, Kelly McGroddy
  • Patent number: 9601472
    Abstract: Some features pertain to a package on package (PoP) device that includes a first package, a first solder interconnect coupled to the first integrated circuit package, and a second package coupled to the first package through the first solder interconnect. The second package includes a first die, a package interconnect comprising a first pad, where the first solder interconnect is coupled to the first pad of the package interconnect. The second package also includes a redistribution portion coupled to the first die and the package interconnect, an encapsulation layer at least partially encapsulating the first die and the package interconnect. The first pad may include a surface that has low roughness. The encapsulation layer may encapsulate the package interconnect such that the encapsulation layer encapsulates at least a portion of the first solder interconnect.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: March 21, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Lizabeth Ann Keser, David Fraser Rae
  • Patent number: 9583655
    Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: February 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Tzu-Huan Cheng
  • Patent number: 9583679
    Abstract: The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: February 28, 2017
    Assignee: Koninklijke Philips N.V.
    Inventor: John Edward Epler
  • Patent number: 9563089
    Abstract: An array substrate comprises a substrate, a passivation layer on a surface of the substrate, a first organic film on a surface of the passivation layer and provided with a groove, a common electrode disposed on a surface of the first organic film outside the groove, and a pixel electrode disposed in the groove. A vertical projection of the common electrode on the surface of the passivation layer does not overlap with a vertical projection of the pixel electrode on the surface of the passivation layer.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: February 7, 2017
    Assignees: SHANGHAI AVIC OPTOELECTRONICS CO., LTD., TIANMA MICRO-ELECTRONICS CO., LTD.
    Inventor: Yanfeng Liang
  • Patent number: 9559482
    Abstract: The present invention relates to a microresonator, in particular a full polymer microresonator, a method for producing the microresonator, and the use of the microresonator as a microlaser and/or molecular sensor.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: January 31, 2017
    Assignee: Karlsruher Institut für Technologie
    Inventors: Uwe Bog, Sebastian Köber, Christian Koos, Tobias Wienhold, Sentayehu Wondimu
  • Patent number: 9541936
    Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: January 10, 2017
    Assignee: STMICROELECTRONICS (TOURS) SAS
    Inventors: Bertrand Rivet, David Jouve
  • Patent number: 9509116
    Abstract: A method for producing a radiation arrangement includes providing a first substrate, arranging a first radiation source or generating first electromagnetic radiation thereon, arranging a first deflection element on the first substrate in a beam path of the first electromagnetic radiation such that the first electromagnetic radiation is deflected in a direction away from the first substrate, providing a second substrate, forming a first coupling-out region in the second substrate at a predefined position, determining an actual position of the first coupling-out region, detecting the deflected first electromagnetic radiation as a result of which a beam path of the deflected first electromagnetic radiation can be determined, aligning the first radiation source and the first deflection element on the first substrate depending on the determined actual position of the first coupling-out region.
    Type: Grant
    Filed: April 3, 2013
    Date of Patent: November 29, 2016
    Assignee: OSRAM GMBH
    Inventors: Andreas Breidenassel, Jan Oliver Drumm
  • Patent number: 9484716
    Abstract: A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: November 1, 2016
    Assignee: Seiko Epson Corporation
    Inventor: Takashi Hagino
  • Patent number: 9478719
    Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: October 25, 2016
    Assignee: Bridgelux, Inc.
    Inventors: R. Scott West, Yan Chai
  • Patent number: 9472735
    Abstract: A light-emitting device includes a package and at least one light-emitting element. The package includes a concave portion which has a bottom surface. The bottom surface includes sides, package distances between opposite sides among the sides, a longest package distance among the package distances, a lower side among the sides, and an upper side among the sides opposite to the lower side. The at least one light-emitting element is arranged on the bottom surface of the concave portion and has a polygonal shape viewed along a front direction. The polygonal shape has light-emitting element distances between vertexes of the polygonal shape and has a longest light-emitting element distance among the light-emitting element distances. The at least one light-emitting element is arranged such that a light-emitting element lateral line along the longest light-emitting element distance is substantially parallel to a package lateral line along the longest package distance.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: October 18, 2016
    Assignee: NICHIA CORPORATION
    Inventors: Hirofumi Ichikawa, Motohisa Kitani, Junya Narita, Keisuke Kurashita, Takanori Akaishi
  • Patent number: 9444061
    Abstract: The invention provides a display substrate, a manufacturing method thereof and a flexible display device. The display substrate in the present invention includes a base substrate and a vulnerable member arranged on the base substrate, as well as a stress absorption layer arranged between the base substrate and the vulnerable member, wherein the projection of the vulnerable member on the base substrate is within the projection region of the stress absorption layer on the base substrate; the stress absorption layer is not arranged on part of the base substrate. Since the display substrate and the flexible display device provided by the present invention are provided with the stress absorption layer, stress generated during bending may be dispersed through the stress absorption layer to protect the vulnerable member from being damaged, so as to improve the reliability of the display substrate and the flexible display device.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: September 13, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ling Shi, Yunfei Li, Kazuyoshi Nagayama
  • Patent number: 9431488
    Abstract: The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: August 30, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventor: Tadao Hashimoto
  • Patent number: 9412961
    Abstract: A vapor deposition apparatus for depositing a thin film on a substrate, by which a deposition process is efficiently performed and deposition film characteristics are easily improved, and a vapor deposition apparatus including: a stage onto which a substrate is disposed; and a supply unit disposed to face the substrate and having a main body member and a nozzle member disposed on one surface of the main body member facing the substrate, to sequentially supply a plurality of gases towards the substrate, and a method of manufacturing an organic light-emitting display apparatus using the same.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: August 9, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Cheol-Min Jang, Myung-Soo Huh, Suk-Won Jung, Jae-Hyun Kim, Sung-Chul Kim, Jin-Kwang Kim, Chang-Woo Shim, Sung-Hun Key, In-Kyo Kim
  • Patent number: 9397314
    Abstract: Devices and techniques are provided in which a transparent substrate is scored to provide a non-planar surface on one side of the substrate. An OLED is then disposed on the other side of the scored substrate and optically coupled to the substrate. The scored surface provides improvements to outcoupling of light generated by the OLED, with little or no additional thickness relative to the OLED alone.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: July 19, 2016
    Assignee: Universal Display Corporation
    Inventors: Emory Krall, Kamala Rajan, Huiqing Pang, Gregory McGraw, William E. Quinn, Ruiqing Ma, Julia J. Brown
  • Patent number: 9355895
    Abstract: A method of providing a via hole and routing structure includes: providing a substrate wafer having recesses and blind holes provided in the surface of the wafer; providing an insulating layer in the recesses and holes; metallizing the holes and recesses; and removing the oxide layer in the bottom of the holes to provide contact between the back side and the front side of the wafer. A semiconductor device, including a substrate having at least one metallized via extending through the substrate and at least one metallized recess forming a routing together with the via. There is an oxide layer on the front side field and on the back side field. The metal in the recess and the via is flush with the oxide on the field on at least the front side, whereby a flat front side is provided. The thickness of the semiconductor device is <300 ?m.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: May 31, 2016
    Assignee: SILEX MICROSYSTEMS AB
    Inventors: Thorbjorn Ebefors, Daniel Perttu