Abstract: An optical device includes an electrooptic crystal substrate, a polarization-inverted region formed in a part of the electrooptic crystal substrate, an optical waveguide formed in the electrooptic crystal substrate, and a groove for relaxing stress disposed between a domain wall of the polarization-inverted region and the optical waveguide.

Abstract: The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

Abstract: An optical waveguide is described. This optical waveguide may be defined in a semiconductor layer, and may include a vertical slot that includes an electro-optic material having an electric-field-dependent index of refraction, and the electro-optic material may be other than a semiconductor in the semiconductor layer. Alternatively, the optical waveguide may include a vertical stack with two semiconductor layers that surround and partially overlap an intermediate layer, which includes the electro-optic material.

Abstract: Various embodiments of the present invention are directed to methods for coupling semiconductor-based photonic devices to diamond. In one embodiment of the present invention, a photonic device is optically coupled with a diamond structure. The photonic device comprises a semiconductor material and is optically coupled with the diamond structure with an adhesive substance that adheres the photonic device to the diamond structure. A method for coupling the photonic device with the diamond structure is also provided. The method comprises: depositing a semiconductor material on the diamond structure; forming the photonic device in the semiconductor material so that the photonic device couples with the diamond structure; and adhering the photonic device to the diamond structure.

Abstract: An apparatus includes a crystalline inorganic semiconductor substrate. A planar optical waveguide core is located over the substrate such that a first length of the planar optical waveguide core is directly on the substrate. A regular array of optical scattering structures is located within a second length of the planar optical waveguide core. A cavity is located in the substrate between the regular array and the substrate.

Abstract: A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.

Abstract: A white light emitting diode and a liquid crystal display device that realizes images using the white light are provided. The white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the LED light source into white light. The light conversion layer includes green light emitting semiconductor nanocrystal and red light emitting semiconductor nanocrystal. A light emitting peak wavelength of the green light emitting semiconductor nanocrystal is about 520 nanometer (nm) or more, a light emitting peak wavelength of the red semiconductor nanocrystal is about 610 nanometer (nm) or more, and full width at half maximums (FWHMs) of light emitting peaks of the green and red light emitting semiconductor nanocrystals are about 45 nanometer (nm) or less.

Abstract: A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.

Abstract: An optical device with high thermal tuning efficiency is described. This optical device may be implemented using a tri-layer structure (silicon-on-insulator technology), including: a substrate, a buried-oxide layer and a semiconductor layer. In particular, a thermally tunable optical waveguide may be defined in the semiconductor layer. Furthermore, a portion of the substrate under the buried-oxide layer and substantially beneath a location of the thermally tunable optical waveguide is fabricated so that a portion of the buried-oxide layer is exposed. In this way, the thermal impedance between the thermally tunable optical waveguide and an external environment is increased, and power consumption associated with thermal tuning of the optical waveguide is reduced.

Abstract: The thermo-optic phase shifter (200) according to an exemplary aspect of the invention includes: a substrate (201); a sacrificial layer (202) formed above the substrate (201); a first cladding layer (203) formed above the sacrificial layer (202) and having a film density higher than that of the sacrificial layer (202); an optical waveguide core (204) formed above the first cladding layer (203); a second cladding layer (205) provided over the first cladding layer (203) to cover the optical waveguide core (204); a heat-generating heater (206) provided to a region of the second cladding layer (205) directly above the optical waveguide core (204); and a groove (207) formed in a side face region of the optical waveguide core (204) and extending from the surface of the second cladding layer (205) to the surface of the substrate (201).

Abstract: Methods for the production of integrated optical waveguides which have a patterned upper cladding with a defined opening to allow at least one side or at least one end of a light transmissive element to be air clad The at least one side or at least one end is, for preference, a lens structure unitary with the waveguide or a bend.

Abstract: A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

Abstract: An active photonic device assembly (1) comprising a substrate (10) and a waveguide entity (18) provided on the substrate (10). The active photonic device assembly (1) further comprises a contact layer (22) of a first III/V material epitaxially grown laterally on top of the waveguide entity (18) from opening fillings (20) in turn provided on a substrate surface. An active photonic device (25) is provided on the contact layer (22).

Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Abstract: Methods of manufacturing a lasing device are provided by some embodiments, the methods including: creating a silicon micro ring with a predetermined radius and a predetermined first cross-sectional dimension; creating a silicon waveguide with a predetermined second cross-sectional dimension, the silicon waveguide spaced from the silicon micro ring by a predetermined distance; and wherein the predetermined distance, the predetermined radius, the predetermined first cross-sectional dimension, and the predetermined second cross-sectional dimension are determined so that at least one first whispering gallery mode resonant frequency of the silicon micro ring and at least one second whispering gallery mode resonant frequency of the silicon micro ring are separated by an optical phonon frequency of silicon.

Abstract: The invention relates to a photonic crystal circuit comprising a guide produced in a photonic crystal membrane on the surface of a substrate and a mode adapter coupled to said guide, wherein the membrane includes a central point constituting the mode adapter having a section gradient as termination of said guide, said point being suspended so as to allow the propagation of modes in a symmetrical manner. It also relates to an optical system incorporating said circuit coupled to an optical fiber.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: In a light emitting module 40, light wavelength conversion ceramic 58 converts the wavelength of the light emitted by a semiconductor light emitting element 52. The light wavelength conversion ceramic 58 is made so transparent that the light wavelength conversion ceramic 58 has 40 percent or more of the total light transmittance of the light with a wavelength within the conversion wavelength range. A reflective film 60 is provided on the surface of the light wavelength conversion ceramic 58 and narrows down the emission area of the light that has transmitted the light wavelength conversion ceramic 58 to an area smaller than the light emitting area of the semiconductor light emitting element 52. In the case, the reflective film 60 guides the light such that the light is emitted in the direction approximately parallel to the light emitting surface of the light emitting element 52.

Abstract: A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer.

Abstract: A device includes a textured substrate, which further includes a plurality of trenches. Each of the plurality of trenches includes a first sidewall and a second sidewall opposite the first sidewall. A plurality of reflectors configured to reflect light is formed, with each of the plurality of reflectors being on one of the first sidewalls of the plurality of trenches. The second sidewalls of the plurality of trenches are substantially free from any reflector.

Abstract: A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.

Abstract: Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.

Abstract: A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: The method of the invention consists of implanting ions into the surface of multilayer optical waveguides, in the highly doped layer, in a defined pattern so as to modify the refractive index of this layer.

Abstract: After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

Abstract: The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.

Abstract: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.

Abstract: A solid state waveguide coupler is provided including a first coupler end disposed on a solid state material substrate for connection to a first solid state waveguide located on the substrate and a second coupler end disposed on the substrate for connection to a second waveguide located on the substrate. A coupling span, comprising a waveguide material layer on the substrate, is disposed between the first and second coupler ends and tapers between a height of the first waveguide and a height of the second waveguide, tapers between a width of the first waveguide and a width of the second waveguide, and includes curved sidewalls along at least a portion of the tapered coupling span. In a method for fabricating the waveguide coupler, material is isotropically removed from a waveguide material layer on the substrate to produce tapered surfaces between the first waveguide and the second waveguide.

Abstract: A method for fabricating selectively coupled optical waveguides on a substrate is disclosed. Initially, a first layer of waveguide material is deposited on a substrate. The first layer of waveguide material is then etched to form multiple level one waveguides and fill shapes. A dielectric layer is deposited on top of the level one waveguides and fill shapes. The surface profile of the dielectric layer deposition tracks the pattern density of the fill shapes. After the surface of the dielectric layer has been polished, a second layer of waveguide material is deposited on the substrate. At least one optically coupled waveguide structure, which is formed by a first level one waveguide and a first level two waveguide, is located adjacent to at least one non-optically coupled waveguide structure, which is formed by a second level one waveguide and a second level two waveguide.

Abstract: Various embodiments of the present invention are related to microresonator systems and to methods for fabricating the microresonator systems. In one embodiment, a method of fabricating a microresonator system comprises: forming a multilayer system having a bottom layer, a top layer, and an intermediate layer having one or more quantum wells and sandwiched between the bottom layer and the top layer; embedding at least one waveguide in a substrate having a top surface, the at least one waveguide positioned adjacent to the top surface of the substrate; wafer bonding the top layer of the multilayer system to the top surface of the substrate; forming a microresonator in the multilayer system, wherein at least a portion of a peripheral annular region of the microresonator is portioned above the at least one waveguide; and forming a current isolation region in at least a portion of a central region of the microresonator.

Abstract: A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer.

Abstract: A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces.

Abstract: The process of the present invention to form a mask made of inorganic material containing silicon reduces the plasma damage induced in the semiconductor layers due to the plasma-ashing. The semiconductor material is heat-treated at a high temperature after the growth thereof to form an oxide layer positively in the surface of the semiconductor material before it is covered by the silicon inorganic film. This inorganic film is dry-etched by an etchant containing fluorine to get a mask for forming a mesa and for growing burying layer selectively.

Abstract: In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. The c-axis of the hexagonal III-nitride semiconductor of the support base is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The angle ALPHA is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces.

Abstract: A method of forming the structure of the semiconductor device having a waveguide. Firstly, a SOI substrate including a bulk silicon, an insulating layer, and a silicon layer is provided and a device region and a waveguide region are defined on the SOI substrate. Afterwards, a protection layer and a patterned shielding layer are formed to cover the waveguide region and expose the device region. Subsequently, a recess is formed by etching the protection layer, the silicon layer and the insulating layer and thereby the bulk silicon is exposed. After that, an epitaxial silicon layer is formed in the recess and a semiconductor device is subsequently formed on the epitaxial silicon layer. Also, the present invention conquers the poor electrical performance of the semiconductor device integrated into the SOI substrate.

Abstract: An embodiment of a method for manufacturing an optical ring resonator device is disclosed. The method forms a ring resonator waveguide on a semiconductor substrate, forms an unoriented electro-optic polymer cladding over the ring resonator waveguide, and forms electrodes on the semiconductor substrate. The unoriented electro-optic polymer cladding is configured to change orientation under an applied electric field, and the electrodes are coupled to the optical ring resonator for manipulation of the electric field applied to the oriented electro-optic polymer cladding for rapid voltage tuning of its index.

Abstract: A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot therebetween. A doping level of the semiconductor material being chosen to make the first and second waveguide conductive. A dielectric material is positioned in the slot which increases confinement of both an optical field and an electrical field inside the slot. A refractive index of the semiconductor material and a refractive index of the dielectric material positioned in the slot being chosen to reduce the V?·L product of the modulator.

Abstract: A process of forming a deflection mirror in a light waveguide with a use of a dicing blade having a cutting end with a flat top cutting face and at least one slanted side cutting face. The process includes a cutting step of cutting a surface of the light waveguide to a depth not greater than a width of the flat top cutting face, thereby forming a groove in the surface of the light waveguide. The groove has a slanted surface which is formed by the slanted cutting face to define the deflection mirror in the waveguide.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through the first epitaxial layer grown on a heavily doped n-type substrate and a plurality of heavily doped p-type regions formed by plasma etching through the second epitaxial layer grown on the first epitaxial layer. Ohmic contacts are formed on p-type regions and on the backside of the n-type substrate. Schottky contacts are formed on the top surface of the n-type region. At normal operating conditions, the current in the device flows through the Schottky contacts. The device, however, is capable of withstanding extremely high current densities due to conductivity modulation caused by minority carrier injection from p-type regions.

Abstract: Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods.

Abstract: A light emitting device including a sapphire layer and a light emitting layer formed on the sapphire layer. The sapphire layer has a polygonal sectional shape whose internal angle is an obtuse angle, such as a regular hexagonal shape. Light emitted from the light emitting layer is totally reflected on one side surface of the sapphire layer and next transmitted through another side surface of the sapphire layer.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

Abstract: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm?2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

Abstract: A single pulse semiconductor laser operating in the gain-switching regime comprises a plane asymmetric waveguide and an active layer in the waveguide, the ratio of a thickness of the active layer to an optical confinement factor of the laser being extremely large, larger than about 51 ?m, for example.

Abstract: Methods of forming a light emitting device include selectively forming a wavelength conversion structure on a light emitting element using stereolithography. Selectively forming the wavelength conversion structure may include covering the light emitting element with a photo-curable liquid polymer containing a luminescent material, and exposing the liquid polymer to light for a time sufficient to at least partially cure the liquid polymer. Multiple layers of polymer can be selectively built up to form a wavelength conversion structure having a custom shape on the light emitting element.

Abstract: A slab-coupled optical waveguide laser (SCOWL) is provided that includes an upper and lower waveguide region for guiding a laser mode. The upper waveguide region is positioned in the interior regions of the SCOWL. The lower waveguide region also guides the laser mode. The lower waveguide region is positioned in an area underneath the upper waveguide region. An active region is positioned between the upper waveguide region and the lower waveguide region. The active region is arranged so etching into the SCOWL is permitted to define one or more ridge structures leaving the active region unetched.

Abstract: According to one embodiment, an organic EL device includes an insulative substrate, a switching element above the insulative substrate, an insulation film above the switching element and includes a contact hole reaching the switching element, a pixel electrode above the insulation film and includes a contact portion extending into the contact hole and electrically connected to the switching element, an organic layer extending over the pixel electrode including the contact portion, and extending over the insulation film in a vicinity of the pixel electrode, and a counter-electrode above the organic layer.

Abstract: An electrically pumped lateral emission electroluminescent device may include a slotted waveguide including a top silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith, and a bottom silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith. A core layer may include silicon oxide between the top and bottom layers and a thickness less than 70 nm. A core layer refraction index may be greater than each of the top and bottom layer refraction indices. A core layer portion may be in a direction of light propagation and may be doped with erbium, and may include silicon nanocrystals. A portion of each of the top and bottom layers may coincide with the core layer portion and may be doped so that the top and bottom layer portions are electrically conductive to define top and bottom plates.

Abstract: One or more first portions of a reduced optical material wafer are covered with a masking layer that leaves uncovered one or more second portions of the reduced optical material wafer. The reduced optical material wafer is exposed to an oxidizing atmosphere to reverse a reduction of the one or more second portions of the reduced optical material wafer that makes the one or more second portions receptive for implementation of one or more optical waveguides.