Packaging (e.g., With Mounting, Encapsulating, Etc.) Or Treatment Of Packaged Semiconductor Patents (Class 438/51)
  • Patent number: 11915924
    Abstract: A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: February 27, 2024
    Assignees: DENSO CORPORATION, KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Megumi Suzuki, Yasuo Yamamoto, Teruhisa Akashi
  • Patent number: 11855604
    Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: December 26, 2023
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Federico Vercesi, Lorenzo Corso, Giorgio Allegato, Gabriele Gattere
  • Patent number: 11847851
    Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: December 19, 2023
    Assignee: INVENSENSE, INC.
    Inventors: Julius Ming-Lin Tsai, Mike Daneman, Sanjiv Kapoor
  • Patent number: 11845653
    Abstract: A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: December 19, 2023
    Assignee: Meridian Innovation Pte Ltd
    Inventors: Wan Chia Ang, Piotr Kropelnicki, Ilker Ender Ocak
  • Patent number: 11833542
    Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: December 5, 2023
    Assignee: BFLY Operations, Inc.
    Inventors: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
  • Patent number: 11830739
    Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than ?50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: November 28, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Hans-Joachim L. Gossmann, Stanislav S. Todorov, Hiroyuki Ito
  • Patent number: 11795053
    Abstract: A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: October 24, 2023
    Assignee: Infineon Technologies AG
    Inventors: Rainer Markus Schaller, Klaus Elian, Horst Theuss
  • Patent number: 11772963
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: October 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hang Chang, I-Shi Wang, Jen-Hao Liu
  • Patent number: 11731871
    Abstract: A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: August 22, 2023
    Assignee: InvenSense, Inc.
    Inventors: Ashfaque Uddin, Daesung Lee, Alan Cuthbertson
  • Patent number: 11714100
    Abstract: A process for producing a piezoelectric sensor includes the following steps: a step of providing a housing made of stainless steel; a step of producing a solution of a compound comprising a metal or metalloid element; a step of depositing a layer of the solution over at least one inner surface of the housing; a step of oxidizing the deposited layer of solution; a step of placing a piezoelectric element inside the housing; a step of closing the housing. A piezoelectric sensor obtained by such a process and comprising a closed steel housing, a piezoelectric element arranged inside the housing and a layer of a solution of a compound comprising a metal or metalloid element that is arranged over at least one inner surface of the housing.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: August 1, 2023
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frédéric Navacchia, Laurent Brissonneau, Christian Lhuillier
  • Patent number: 11697582
    Abstract: A microelectromechanical system (MEMS) transducer includes a substrate and a pair of electrodes supported by the substrate. The pair of electrodes are configured as a bias electrode-sense electrode couple. A moveable electrode of the pair of electrodes is configured for vibrational movement in a first direction during excitation of the moveable electrode. The pair of electrodes are spaced apart from one another by a gap in a second direction perpendicular to the first direction. The moveable electrode includes a cantilevered end, the cantilevered end being warped to exhibit a resting deflection along the first direction.
    Type: Grant
    Filed: June 14, 2022
    Date of Patent: July 11, 2023
    Assignee: Soundskrit Inc.
    Inventors: Stephane Leahy, Wan-Thai Hsu, Mohsin Nawaz, Carly Stalder, Sahil Gupta, Meysam Daeichin
  • Patent number: 11697588
    Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.
    Type: Grant
    Filed: December 6, 2021
    Date of Patent: July 11, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Ren Wang, Shing-Chyang Pan, Yuan-Chih Hsieh
  • Patent number: 11697583
    Abstract: A micromechanical device including a substrate, a movable mass, and a stop spring structure, which includes a stop. The substrate includes a substrate surface in parallel to a main extension plane and the movable mass is situated movably above the substrate surface in relation to the substrate. The stop spring structure is connected to the movable mass. The stop is designed to strike against the substrate surface in the event of a deflection of the movable mass in a z direction, perpendicular to the main extension plane. The stop spring structure, at the location of the stop, includes a first spring constant, a second spring constant, in parallel to the main extension plane, and a third spring constant, in parallel to the main extension plane and perpendicular to the x direction. The first spring constant is greater than the second spring constant and/or is greater than the third spring constant.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: July 11, 2023
    Assignee: ROBERT BOSCH GMBH
    Inventors: Cristian Nagel, Johannes Classen, Rolf Scheben, Rudy Eid
  • Patent number: 11700492
    Abstract: A microphone assembly including an acoustic transducer configured to generate an electrical signal responsive to acoustic activity, an integrated circuit electrically coupled to the acoustic transducer and configured to receive the electrical signal from the acoustic transducer and generate an output signal representative of the acoustic activity, a cover, and a substrate. The substrate including a first surface and a second surface to which the cover is coupled. The second surface is disposed at a perimeter of the substrate and the first surface is raised with respect to the second surface. The cover is coupled to the substrate to form a housing in which the transducer and the integrated circuit are disposed.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: July 11, 2023
    Assignee: Knowles Electronics, LLC
    Inventor: Fei Ding
  • Patent number: 11691870
    Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
    Type: Grant
    Filed: February 1, 2021
    Date of Patent: July 4, 2023
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Alessandro Tocchio, Lorenzo Corso
  • Patent number: 11684949
    Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: June 27, 2023
    Assignee: BFLY OPERATIONS, INC.
    Inventors: Jonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
  • Patent number: 11667522
    Abstract: The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a cap substrate bonded to a device substrate. The cap substrate comprises a MEMS trench, a scribe trench, and an edge trench respectively recessed from at a front-side surface of the cap substrate. A stopper is disposed within the MEMS trench and raised from a bottom surface of the MEMS trench.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: June 6, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chuan Tai, Fan Hu
  • Patent number: 11667519
    Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
    Type: Grant
    Filed: February 1, 2021
    Date of Patent: June 6, 2023
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Alessandro Tocchio, Lorenzo Corso
  • Patent number: 11668680
    Abstract: Devices for detecting plate bending, or flexural, waves include at least two mechanical resonators positioned on a plate in a specified configuration. Each mechanical resonator has an associated oscillation amplitude detector, such as a laser vibrometer, configured to detect resonant oscillation of the mechanical resonator in response to an incident flexural wave. A ratio of frequency-dependent oscillation data for each mechanical oscillator is compared to a calibration curve to determine the angle of incidence of the flexural wave.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: June 6, 2023
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Taehwa Lee, Hideo Iizuka
  • Patent number: 11656454
    Abstract: The description relates to computing devices that employ steerable optics. One example includes a steering mechanism and a base substrate positioned relative to the steering mechanism. The example also includes an optical substrate positioned over the base substrate and an adhesive complex securing the optical substrate relative to the base substrate with multiple different types of adhesives.
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: May 23, 2023
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Chuan Pu, Jincheng Wang, Kingsuk Maitra, Michael James Nystrom
  • Patent number: 11640928
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a device layer having a front-side surface opposite a back-side surface. A first heat dispersion layer is disposed along the back-side surface of the device layer. A second heat dispersion layer underlies the front-side surface of the device layer. The second heat dispersion layer has a thermal conductivity lower than a thermal conductivity of the first heat dispersion layer.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: May 2, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Shau-Lin Shue, Hsiao-Kang Chang, Cherng-Shiaw Tsai
  • Patent number: 11619544
    Abstract: A vibration sensor is designed to have a pressure-enhancing member, a pressure sensing device and first, second, third chambers. An air gap is designed to enable the first chamber to be vented to the third chamber such that the first chamber is combined with the third chamber to obtain a communicable air volume. An adhesive layer is formed between a spacer and a circuit board, and the air gap is formed in an adhesive-absent section between the spacer and the circuit board. When the pressure-enhancing member is moved to squeeze the air in the second chamber, a sensitivity of the pressure sensing device will be greatly improved.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: April 4, 2023
    Assignee: MERRY ELECTRONICS CO., LTD.
    Inventors: Jen-Yi Chen, Chao-Sen Chang, Yueh-Kang Lee
  • Patent number: 11618674
    Abstract: A method including fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a hardmask on a second side of the device wafer, wherein the second side is planar. An etch stop layer is deposited over the hardmask and an exposed portion of the second side of the device wafer. A dielectric layer is formed over the etch stop layer. A via is formed within the dielectric layer. The via is filled with conductive material. A eutectic bond layer is formed over the conductive material. Portions of the dielectric layer uncovered by the eutectic bond layer is etched to expose the etch stop layer. The exposed portions of the etch stop layer is etched. A micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: April 4, 2023
    Assignee: InvenSense, Inc.
    Inventors: Daesung Lee, Alan Cuthbertson
  • Patent number: 11615996
    Abstract: A foil package includes a first foil substrate with a first and a second main surface, a second foil substrate with a first and a second main surface, wherein its first main surface is arranged facing the second main surface of the first foil substrate. The foil package includes at least one electronic device arranged between the first foil substrate and the second foil substrate and a first electrically conductive layer structure structured into a plurality of first partial areas arranged on the second main surface of the first foil substrate. The plurality of partial areas incompletely cover the second main surface of the first foil substrate. The at least one electronic device includes a terminal side and a side opposite to the terminal side.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: March 28, 2023
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventor: Robert Faul
  • Patent number: 11577276
    Abstract: A piezoelectric micromachined ultrasonic transducer (PMUT) device includes a layer of piezoelectric material that is activated and sensed by an electrode and a conductive plane layer. The conductive plane layer may be electrically connected to processing circuitry by a via that extends through the piezoelectric layer. One or more isolation trenches extend through the conductive plane layer to isolate the conductive plane layer from other conductive plane layers of adjacent PMUT devices of a PMUT array.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: February 14, 2023
    Assignee: INVENSENSE, INC.
    Inventor: Chienliu Chang
  • Patent number: 11574879
    Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 7, 2023
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Pedro Augusto Borrego Lambin Torres Amaral, Ewa Brox-Napieralska, Bernd Goller, Andreas Wiesbauer
  • Patent number: 11548781
    Abstract: A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: January 10, 2023
    Assignee: SCIOSENSE B.V.
    Inventors: Casper Van Der Avoort, Willem Frederik Adrianus Besling, Remco Henricus Wilhelmus Pijnenburg, Olaf Wunnicke, Coen Tak
  • Patent number: 11535513
    Abstract: A method of manufacturing a physical quantity detection sensor includes forming a stacked structure having a plurality of sensor devices by bonding together a sensor substrate and a different type substrate of a different material from a material of the sensor substrate, the sensor substrate having a plurality of sensor movable portions therein, and dicing the stacked structure using a dicing blade, wherein a groove is provided in one of the sensor substrate and the different type substrate to penetrate the one of the sensor substrate and the different type substrate, the groove having a width larger than a width of the dicing blade, and in at least part of the dicing, the dicing blade is accommodated in the groove and advances without contacting surfaces on left and right sides of the groove.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: December 27, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yasuo Yamaguchi
  • Patent number: 11496822
    Abstract: The present invention provides a microphone mounting structure for a headset, the microphone mounting structure comprising: a housing surrounding the headset and forming an audio output channel along a vertical direction inside; a microphone mounted along the vertical direction inside a space formed by the audio output channel, and a substrate connected to a main board and including a supporting part mounted in a rear side of the microphone, wherein the microphone includes a circuit substrate formed in a rear side of the microphone, and the circuit substrate includes a hole, wherein the supporting part includes a substrate hole communicating the hole.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: November 8, 2022
    Assignee: BUJEON CO., LTD.
    Inventors: Donghyun Seo, Ki-Bum Bang, Sunwoo Park
  • Patent number: 11493530
    Abstract: The accelerometers disclosed herein provide excellent sensitivity, long-term stability, and low SWaP-C through a combination of photonic integrated circuit technology with standard micro-electromechanical systems (MEMS) technology. Examples of these accelerometers use optical transduction to improve the scale factor of traditional MEMS resonant accelerometers by accurately measuring the resonant frequencies of very small (e.g., about 1 ?m) tethers attached to a large (e.g., about 1 mm) proof mass. Some examples use ring resonators to measure the tether frequencies and some other examples use linear resonators to measure the tether frequencies. Potential commercial applications span a wide range from seismic measurement systems to automotive stability controls to inertial guidance to any other application where chip-scale accelerometers are currently deployed.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: November 8, 2022
    Assignee: Massachusetts Institute of Technology
    Inventors: Suraj Deepak Bramhavar, Paul William Juodawlkis
  • Patent number: 11484911
    Abstract: A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: November 1, 2022
    Assignee: BFLY Operations, Inc.
    Inventors: Lingyun Miao, Jianwei Liu
  • Patent number: 11467027
    Abstract: A vibration sensor is designed to have a pressure-enhancing member, a pressure sensing device and first, second, third chambers. A first through hole is designed to enable the first chamber to be vented to the third chamber such that the first chamber is combined with the third chamber to obtain a communicable air volume. When the pressure-enhancing member is moved to squeeze the air in the second chamber, a sensitivity of the pressure sensing device will be greatly improved.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: October 11, 2022
    Assignee: MERRY ELECTRONICS CO., LTD.
    Inventors: Jen-Yi Chen, Chao-Sen Chang, Yueh-Kang Lee
  • Patent number: 11445304
    Abstract: An ultrasonic sensor includes: an element storage case including a case-side diaphragm having a thickness direction along a directional axis; and an ultrasonic element accommodated in the element storage case and spaced apart from the case-side diaphragm. The ultrasonic element includes an element-side diaphragm having the thickness direction along the directional axis and provided by a thin part of a semiconductor substrate. The semiconductor substrate is arranged to provide a closed space between the case-side diaphragm and the element-side diaphragm. The semiconductor substrate is fixed and supported by the element-storage case.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: September 13, 2022
    Assignee: DENSO CORPORATION
    Inventors: Tatsuya Kamiya, Itaru Ishii, Tomoki Tanemura, Takashi Aoki, Tetsuya Katoh
  • Patent number: 11444032
    Abstract: A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, a first dielectric layer, and a first hole. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface. The first dielectric layer is disposed on the second surface and has a third surface away from the substrate. The first hole extends from the first dielectric layer and the substrate. The first hole is substantially aligned with the first electronic component.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: September 13, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yencheng Kuo, Shao-Lun Yang
  • Patent number: 11361928
    Abstract: A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 14, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Qing Cao, Kangguo Cheng, Zhengwen Li, Fei Liu
  • Patent number: 11348990
    Abstract: A stretchable display device comprises a lower substrate; a plurality of island substrates spaced apart from each other and disposed on the lower substrate; a plurality of pixels defined on the plurality of island substrates; a plurality of base polymers disposed between adjacent island substrates of the plurality of island substrates; and a plurality of conductive particles distributed in the base polymer and electrically connecting a plurality of pads disposed on the adjacent island substrates.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: May 31, 2022
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Kihan Kim, Hyokang Lee
  • Patent number: 11308257
    Abstract: A structure including a plurality of dielectric regions is described. The structure can include a rivet cell. The rivet cell can include a set of stacked vias. The rivet cell can extend through a stress hotspot of the structure. A length of the rivet cell can thread through at least one dielectric region among the plurality of dielectric regions. The rivet cell can be among a number of rivet cells inserted in the stress hotspot. The stress hotspot can be among a plurality of stress hotspots across the structure. A length of the rivet cell can be based on a model of a relationship between the length of the rivet cell and an energy release rate of the structure. The rivet cell can thread through an interface between a first dielectric region and a second dielectric region having different dielectric constants.
    Type: Grant
    Filed: December 15, 2020
    Date of Patent: April 19, 2022
    Assignee: International Business Machines Corporation
    Inventors: Dureseti Chidambarrao, David Wolpert, Atsushi Ogino, Matthew T. Guzowski, Steven Paul Ostrander, Tuhin Sinha, Michael Stewart Gray
  • Patent number: 11296016
    Abstract: Semiconductor devices and methods and apparatus to produce such semiconductor devices are disclosed. An integrated circuit package includes a lead frame including a die attach pad and a plurality of leads; a die including a MEMs region defined by a plurality of trenches, the die electrically connected to the plurality of leads; and a mold compound covering portions of the die, the mold compound defining a cavity between a surface of the die and a surface of the mold compound, wherein the mold compound defines a vent.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 5, 2022
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Robert Allan Neidorff, Benjamin Cook, Steven Alfred Kummerl, Barry Jon Male, Peter Smeys
  • Patent number: 11279615
    Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Hua Lin, Chang-Ming Wu, Chung-Yi Yu, Ping-Yin Liu, Jung-Huei Peng
  • Patent number: 11271132
    Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: March 8, 2022
    Assignee: Artilux, Inc.
    Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin, Yun-Chung Na, Hui-Wen Chen, Han-Din Liu
  • Patent number: 11187605
    Abstract: A pressure sensor assembly, which includes a pressure sensing element having a diaphragm, a plurality of piezoresistors connected to the diaphragm, and at least one layer of sealing glass connected to the diaphragm. The pressure sensor assembly also includes a base, a layer of sealing glass is connected to the base, and is configured to maximize the sensitivity of the plurality of piezoresistors via tailoring the side surfaces of the glass surface to control the deformable diaphragm. The layer of sealing glass includes a first recess portion, and a second recess portion formed as part of the layer of sealing glass on the opposite side of the layer of sealing glass as the first recess portion. One of the plurality of piezoresistors is partially surrounded by the first recess portion, and another of the plurality of piezoresistors is partially surrounded by the second recess portion.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: November 30, 2021
    Assignee: Vitesco Technologies USA, LLC
    Inventors: Zhijun Guo, Jeffrey Frye, Paul Haack, Richard Cronin
  • Patent number: 11152226
    Abstract: A structure with controlled capillary coverage is provided and includes a substrate including one or more first contacts, a component and adhesive. The component includes one or more second contacts and a rib disposed at a distance from each of the one or more second contacts. The component is disposed such that the one or more second contacts are communicative with the one or more first contacts and corresponding surfaces of the substrate and the rib face each other at a controlled gap height to define a fill-space. The adhesive is dispensed at a discrete point whereby the adhesive is drawn to fill the fill-space by capillary action.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: October 19, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kevin Drummond, Thomas Lombardi, Steve Ostrander, Stephanie Allard, Catherine Dufort
  • Patent number: 11101417
    Abstract: A printed structure includes a destination substrate comprising two or more contact pads disposed on or in a surface of the destination substrate, a component disposed on the surface, and two or more electrically conductive connection posts. Each of the connection posts extends from a common side of the component. Each of the connection posts is in electrical and physical contact with one of the contact pads. The component is tilted with respect to the surface of the destination substrate. Each of the connection posts has a flat distal surface.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: August 24, 2021
    Assignee: X Display Company Technology Limited
    Inventors: Christopher Andrew Bower, Matthew Alexander Meitl, Ronald S. Cok, Salvatore Bonafede, Brook Raymond, Andrew Tyler Pearson
  • Patent number: 11085837
    Abstract: A force sensor may comprise a sense die comprising a top part and a bottom part. Generally, the top part may comprise a first surface and a second surface, and the bottom part may comprise a first surface for direct contact with a substrate. Typically, the bottom part may be formed by removing a portion of the material of the sense die around the edges of a first face of the sense die. Typically, adhesive may replace the portion of the sense die material removed from the edges of the first face of the sense die. Thus, the adhesive may secure the first surface of the bottom part of the sense die directly to the substrate without serving as an interface between the bottom part of the sense die and the substrate.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: August 10, 2021
    Assignee: HONEYWELL INTERNATIONAL INC.
    Inventors: Jason Dennis Patch, Todd Eckhardt, Jim Machir, Richard Wade, Jim Cook
  • Patent number: 11069611
    Abstract: A liner-free or partial liner-free contact/via structure that is embedded within a dielectric capping layer and positioned between an electrically conductive structure and an overlying contact structure is provided.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: July 20, 2021
    Assignee: International Business Machines Corporation
    Inventor: Chih-Chao Yang
  • Patent number: 11027968
    Abstract: In a semiconductor device, a first substrate and a second substrate are bonded to each other through an insulating film. A hermetically sealed chamber is provided between the first substrate and the second substrate, and a sensing part is enclosed in the hermetically sealed chamber. The second substrate has a through hole penetrating in a stacking direction of the first substrate and the second substrate and exposing the first surface of the first substrate. A penetrating electrode is disposed on a wall surface of the through hole of the second substrate, and is electrically connected to the sensing part. A discharge path is provided, at a position located between the hermetically sealed chamber and the through hole for releasing outgas generated during bonding from the hermetically sealed chamber to the through hole.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: June 8, 2021
    Assignee: DENSO CORPORATION
    Inventors: Megumi Suzuki, Teruhisa Akashi
  • Patent number: 10886310
    Abstract: The application discloses a photoelectric sensor, a fabricating method thereof, and a display device. The method for fabricating the photoelectric sensor, includes: fabricating a thin film transistor (TFT) array and a photodiode array on a silicon substrate; transferring the TFT array onto a base substrate by a micro transfer process; and placing the photodiode array on the base substrate formed with the TFT array, in a manner that an orthographic projection of the photodiode array on the base substrate overlaps with an orthographic projection of the TFT array on the base substrate.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: January 5, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yuzhen Guo, Xue Dong, Haisheng Wang, Chunwei Wu, Yingming Liu, Rui Xu
  • Patent number: 10811581
    Abstract: A method of manufacturing a semiconductor device includes: a solder ball forming step comprising forming a plurality of solder balls at intervals on (i) a surface of a package surrounding a recess, or (ii) a surface of the light-transmissive member facing the surface of the package surrounding the recess (i) the surface of a light-transmissive member, or (ii) the surface of the package, into contact with an upper surface of the solder balls, which are softened, such that an air passage communicating with the recess is formed between the solder balls; and a bonding step comprising reducing a pressure in the recess via the air passage, and thereafter, in a state in which a gas for sealing is injected, heating and pressing the light-transmissive member and the package, to melt the solder balls and bond the light-transmissive member and the package.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: October 20, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Kazuma Kozuru, Ryota Okuno
  • Patent number: 10715098
    Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other, wherein the cap includes a trench formed around the bonding portion and a protective layer covering a surface of the trench in the cap, and wherein a portion of the bonding portion fills at least a portion of the trench.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: July 14, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Kyung Lee, Kwang Su Kim, Jin Suk Son, Yeong Gyu Lee, Sung Sun Kim, Sang Jin Kim
  • Patent number: 10654716
    Abstract: At least one semiconductor component is packaged by covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; surrounding the at least one semiconductor component at least partially with a photoablatable packaging material; exposing the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partially by forming at least one trench through at least the packaging material using a light beam; and exposing the at least one partial surface of the at least one semiconductor component at least partially by at least partially removing the previously exposed sacrificial material using a chemical or physical removal method to which the packaging material has a higher resistance than the sacrificial material.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: May 19, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Andreas Krauss, Nicola Mingirulli, Robert Bonasewicz