Abstract: A semiconductor memory device architecture and method thereof obtains a high data bandwidth by forming multiple input/output lines. A unit array has a plurality of reference blocks formed in a length direction of the device, each reference block storing a plurality of memory cells. A sub array has a plurality of unit arrays formed in a longitudinal direction perpendicular to the length direction. A word line selects memory cells from within the reference blocks, the word line extending in the length direction. A pair of bit lines and a pair of data input/output lines extend in the longitudinal direction. The pair of data input/output lines are correspondingly connected to 2.sup.n (n=1,2, . . . ) pairs of bit lines. A read select signal line selects a pair of bit lines from among 2.sup.n pairs of bit lines connected to one pair of data input/output lines in response to an input of a column address during a read operation. A write select signal line selects a pair of bit lines from among 2.sup.
Abstract: A method for improving the end-point detection for contact and via etching is disclosed. The disclosure describes the deliberate addition of dummy patterns in the form of contact and via holes to the regular functional holes in order to increase the amount of etchable surface area. It is shown that, one can then take advantage of the marked change in the composition of the etchant gas species that occurs as soon as what was once a large exposed area has now been consumed through the etching process. This then gives a strong and robust signal for the end of the etching process. This in turn results in better controlled and more reliable product. It is also indicated that with the full uniform pattern of the via layers now possible, the chemical/mechanical polishing process becomes much less pattern sensitive.
Abstract: The present invention is related to a flexible IC layout method utilized for an IC having a plurality of logic gates in a first direction connected with a plurality of logic gates in a second direction wherein each of the logic gates has at least one polysilicon region and each of the logic gates in the first direction has an output serving as an input of a corresponding one of the logic gates in the second direction, which includes a step of forming input terminals for the logic gates by ion implantation. The present invention is flexible because the addition or deduction of the number of the input terminals according to the present invention can be achieved by ion implantation.
Abstract: A logic synthesis method uses a two-dimensional sizing progression for selecting gates from a cell library in designing an integrated circuit. The drive load and desired performance for each logic gate in a functional configuration for the integrated circuit may be determined. The device configuration or gate to implement the logic gate may be selected from a cell library. The selected gate has a drive load range encompassing the determined drive load and achieves a desired performance target for the logic gate. A two-dimensional sizing progression may be used to help minimize layout area, power consumption, and performance loss in implementing BiNMOS gates.
Abstract: A method of improving via/contact coverage in an integrated circuit. A standard layout of an interconnect layer comprising plurality of interconnect lines is initially generated with well-known techniques. After generation of the initial layout, the amount of overlap of at least one via by an interconnect line is optimized by increasing the amount of overlap of each side of the via by the interconnect line wherever possible without violating a minimum line separation requirement.
Abstract: According to the present invention, using a computer aided design system for designing semiconductor integrated circuits wherein a plurality of logic cells forming a circuit net are disposed on a semiconductor chip according to a net list specifying a connection pattern assigned among input and output terminals of a plurality of logic cells and a wiring length connecting the terminals.