Abstract: A semiconductor package includes a semiconductor chip having chip pads on a first surface and having first and second side surfaces opposite to each other and third and fourth side surfaces opposite to each other, a molding member covering the third and fourth side surfaces and exposing the first and second side surfaces of the semiconductor chip, a redistribution wiring layer on a lower surface of the molding member to cover the first surface of the semiconductor chip and including a plurality of redistribution wirings electrically connected to the chip pads, and outer connection members arranged in a connection region defined on an outer surface of the redistribution wiring layer and electrically connected to the redistribution wirings.

Abstract: An image sensor including a plurality of pixels, each pixel including a photodetector coupled to a control circuit, the photodetector being formed inside and on top of a first semiconductor substrate, and the control circuit including at least one first MOS transistor formed inside and on top of a second semiconductor substrate arranged on the first substrate, the sensor being intended to be illuminated on the side of the surface of the first substrate opposite to the second substrate, the sensor further comprising a shield arranged between the first and second substrates and extending over substantially the entire surface of the sensor, said shield including at least one electrically-conductive layer.

Abstract: A semiconductor package includes an interconnect structure, an insulating layer and a conductive layer. The interconnect structure includes a first surface and a second surface opposite to the first surface. The insulating layer contacts the interconnect structure. The insulating layer includes a third surface contacting the second surface of the interconnect structure and a fourth surface opposite to the third surface. The conductive layer is electrically coupled to the interconnect structure. The conductive layer has a continuous portion extending from the second surface to the fourth surface.

Abstract: A solar energy roof tile, thermally and/or electrically conductively connected to an adjacent solar energy roof tile, includes a lower face for placing on at least some regions of a roof construction, an upper face opposite the lower face formed at least in some regions by a solar energy utilisation module, two opposite lateral walls, a rear face connecting the lateral walls, and a front face opposite the rear face that connects the lateral walls. The two lateral walls, the rear face and front face together connect the lower and upper faces, such that a cavity is formed between the two lateral walls, the rear face, front face, and lower and upper faces. The lower face has, in the region of the front face, a lower opening for providing access. The upper face has, in the region of the rear face, an upper opening for providing access into the cavity.

Abstract: A sensor package structure is provided and includes a substrate, a sensor chip disposed on the substrate, a plurality of wires electrically coupled to the substrate and the sensor chip, a light-permeable layer, and a colloid formed on the substrate to fix the light-permeable layer. The colloid covers the wires, a peripheral portion of the sensor chip, and lateral surfaces of the light-permeable layer. A top curved surface of the colloid is partially arranged beside the lateral surfaces. In a cross section of the sensor package structure, the top curved surface has a reference point spaced apart from one of the lateral surfaces adjacent thereto by 100 ?m, a top edge of the top curved surface and the reference point define a connection line, and the connection line and the one of the lateral surfaces have an acute angle within a range from 25 degrees to 36 degrees.

Abstract: The disclosure provides for methods of making electrically conductive apparatus, such as circuit boards. The methods include 3D-printing a ceramic material into a ceramic substrate that includes a void. A conductive material is infused into the void. The conductive materiel forms electrically conductive connections within the apparatus. Also disclosed are apparatus formed by the methods.

Abstract: A sensing device and a method for packaging the same are provided. The sensing device includes a lead frame, a chip, an insulated housing, a sensor, and a protector. The lead frame includes a first surface, a second surface opposite to the first surface, a first die-bonding area and a plurality of wire bonding areas of the lead frame disposed on the first surface, and a second die-bonding area disposed on the second surface. The chip is disposed in the first die-bonding area and is electrically connected to the plurality of wire bonding areas of the lead frame. The insulated housing covers the chip and a portion of the lead frame. The sensor is disposed on the second die-bonding area of the lead frame, and the protector is disposed on the sensor.

Abstract: The current disclosure is directed to a SRAM bit cell having a reduced coupling capacitance. In a vertical direction, a wordline “WL” and a bitline “BL” of the SRAM cell are stacked further away from one another to reduce the coupling capacitance between the WL and the BL. In an embodiment, the WL is vertically spaced apart from the BL with one or more metallization level that none of the WL or the BL is formed from. Connection island structures or jumper structures are provided to connect the upper one of the WL or the BL to the transistors of the SRAM cell.

Abstract: A package structure is provided. The package structure includes a substrate, a sensor device, an encapsulant and a signal blocking structure. The substrate has a signal passing area. The sensor device is disposed over the substrate. The sensor device has a first surface, a second surface opposite to the first surface and a sensing area located at the second surface. The second surface of the sensor device faces the substrate. The encapsulant covers the sensor device and the substrate. The signal blocking structure extends from the substrate into the encapsulant.

Abstract: The present technology relates to a semiconductor device and a manufacturing method therefor, a solid-state imaging element and electronic equipment that make it possible to suppress breakdown of a side wall insulating film by charge damage to suppress short-circuiting. The semiconductor device according to an aspect of the present technology includes a first semiconductor substrate on which a given circuit is formed, a second semiconductor substrate, and through electrodes that electrically connect the first semiconductor substrate and the second semiconductor substrate to each other. The through electrode is formed such that a through-hole is opened through a protection diode structure formed in the first semiconductor substrate, an insulating film is deposited on a side wall of the through-hole, and an electrode material is then filled inside the through-hole in which the insulating film is deposited. The present technology can be applied, for example, to a CMOS image sensor.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: A semiconductor package is provided. The package includes a semiconductor chip that includes photoelectric conversion elements provided on an active array region of the semiconductor chip; a transparent member on the semiconductor chip; and a spacer between the semiconductor chip and the transparent member, and horizontally spaced apart from the active array region. The spacer includes: a supporter that extends from a top surface of the semiconductor chip toward a bottom surface of the transparent member; a first adhesive pattern that is between the semiconductor chip and a bottom surface of the supporter; and a second adhesive pattern that is between the transparent member a top surface of the supporter. The spacer protrudes from a lateral surface of the semiconductor chip, and a lateral surface of the spacer is offset from the lateral surface of the semiconductor chip.

Abstract: Embodiments provide solar panels and methods of assembly thereof, permitting operation of a photovoltaic material with reduced degradation. As one example, a solar panel comprises one or more solar cells that include perovskite, the one or more solar cells encapsulated by a film and housed in a glass exterior that is hermetically sealed to maintain a vacuum in an interior of the solar panel of 10?7 Pascal or less throughout a lifetime of the solar panel. In this way, degradation of the solar panel due to water ingress can be avoided, thereby increasing an operational lifetime of perovskite-based solar panels and reducing manufacturing costs as compared to silicon-based counterparts.

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

Abstract: The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.

Abstract: A radiation sensor element comprises a support plate, having a front face, extending substantially along a base plane, defining a lateral extension of the radiation sensor element; a substrate, having a basal face, an interconnection face opposite the basal face, and an edge face connecting the basal face and the interconnection face; a sensor tile, having a back face facing the interconnection face; a copper-pillar interconnection element between the interconnection face and the back face; and a non-conductive film extending between the interconnection face and the back face. The front face comprises, laterally beyond the edge face, a depression extending in a thickness direction perpendicular to the base plane, and the non-conductive film comprises an edge protrusion part extending in the depression.

Abstract: A backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, and a second bonding pad disposed in the recess and electrically connected with the bonding pad.

Abstract: There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

Abstract: An omnidirectional image sensor and a method of manufacturing the omnidirectional image sensor are provided. An image sensor may include a plurality of photodiodes, and a spherical structure comprising a plurality of protrusions, wherein the plurality of photodiodes are disposed between the plurality of protrusions, and wherein the spherical structure comprises a plurality of spherical wedges.

Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.

Abstract: CPV modules include a back plate having an array of 1 mm2 or smaller solar cells thereon. A backplane interconnect network is also provided on the back plate. This backplane interconnect network operates to electrically connect the array of solar cells together. A front plate, which is spaced-apart from the back plate, is provided. This front plate includes an array of primary lenses thereon that face the array of solar cells. The front plate can be configured to provide a greater than 1000× lens-to-cell light concentration to the array of solar cells. To achieve this 1000× lens-to-cell light concentration, the primary lenses can be configured as plano-convex lenses having a lens sag of less than about 4 mm. An array of secondary optical elements may also be provided, which extend between the array of primary lenses and the array of solar cells.

Abstract: An LED display device includes a substrate and an LED encapsulation unit disposed on a side of the substrate, the LED encapsulation unit includes an LED stent and an LED chip encapsulated in the LED stent, a epoxy resin encapsulates the side of the substrate on which the LED encapsulation unit is disposed and the LED encapsulation unit to form a protection layer shielding the LED encapsulation unit. The epoxy resin completely encapsulates the substrate and the LED encapsulation unit to protect effectively the substrate and the LED encapsulation unit, which is sufficient to resist severe environment. Compared with the prior art, the service life of the LED display device is effectively prolonged, cost is reduced. The invention also provides a molding module for preparing the LED display device, and a preparation method thereof.

Abstract: A method for forming a solar cell including steps of (1) providing a semiconductor wafer having an upper surface; (2) applying an electrical contact material to the upper surface, the electrical contact material forming an electrically conductive grid that includes grid lines extending from a bus bar; (3) forming an isolation channel in the semiconductor wafer to define a solar cell portion and a wing portion, wherein the wing portion is electrically isolated from the solar cell portion, and wherein the wing portion is substantially free of the electrical contact material; (4) submerging the semiconductor wafer in a solvent, wherein formation of metal dendrites on the grid lines of the electrically conductive grid is inhibited; and (5) separating the solar cell portion from the wing portion.

Abstract: The present technology relates to a semiconductor apparatus, a solid-state image pickup device, an image pickup apparatus, and an electronic apparatus capable of improving impedance characteristics while preventing an occurrence of a flare and an interference due to a bonding jig, and achieving downsizing an apparatus. By aligning the heights of a cover glass and a semiconductor device, a distance between the cover glass and the semiconductor device is set to be minimum, and thus it is possible to suppress an occurrence of a flare due to incident light reflected on a side surface of the semiconductor device, and improve the impedance characteristics of the semiconductor device and the semiconductor image pickup device. Further, the interference of the jig used for the semiconductor device is reduced. The present technology can be applied to a CMOS image sensor.

Abstract: The present invention provides for a multi-layered structure adapted to be applied to the surface of a back-contact back-sheet for a photovoltaic module comprising back-contact solar cells. The multi-layered structure comprises a non-extendible intermediate layer (240) comprised of a dielectric material. The multi-layered structure further comprises an upper layer (280) of an encapsulating material coupled to the upper surface (242) of the intermediate layer, as well as a lower layer (270) of a thermo-adhesive material coupled to the lower surface (244) of the intermediate layer (240). The multi-layered structure also has a plurality of through-holes pierced at predetermined positions.

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Abstract: An in-vivo imaging device for capturing one or more narrow band images of the gastrointestinal tract, or other body lumens or cavities of a patient, using one or more narrow band illumination sources and an imager having an array of light sensitive elements.

Abstract: An electroluminescent display or lighting product incorporates a panel including a collection of distinct light-emitting elements formed on a substrate. A plurality of distinct local seals are formed below respective individual light-emitting elements or groups of light-emitting elements. Some embodiments combine a metal foil substrate and glass local seals in a flexible bottom-emitting product. The local seal may be used in conjunction with a continuous thin film encapsulation structure. Optical functions can be provided by each local seal, including refraction, filtering, color shifting, and scattering. Each local seal is formed by depositing a low melting temperature glass powder suspension or paste using inkjet technology, and fusing the glass powder using a scanning laser beam having a tailored beam profile. In other embodiments, a lower encapsulation substrate incorporating local window seals is wholly or partially pre-formed.

Abstract: A first surface of a first section of a connection member includes a first conductive region, and a second surface of a second section of the connection member includes a second conductive region. The first conductive region is formed along an n-side electrode included in one solar cell, and is electrically connected to the n-side electrode. The second conductive region is formed along a p-side electrode included in a different solar cell, and is electrically connected to the p-side electrode. The first conductive region and the second conductive region are electrically connected to each other.

Abstract: Methods and devices for removing entrapped bubbles or air in photovoltaic solar cells during a manufacturing process including an encapsulation process include, for example, wiggling the photovoltaic solar cells or pushing out air bubbles by applying vibrations and/or light pressures. Optional additional steps include liquid wetting or dispensing to or around the photovoltaic solar cell matrix for air releasing before the placement of the matrix into a liquid for encapsulation.

Abstract: An optoelectronic semiconductor chip (12) is disclosed comprising a thin-film semiconductor body (8), which comprises a semiconductor layer sequence (2, 20) having an active region (3) suitable for generating radiation, and comprising a carrier layer (7), which is formed on the semiconductor layer sequence and carries the thin-film semiconductor body.

Abstract: The invention concerns a PV system in which a multitude of PV modules are interconnected to PV generators. Each of the PV modules comprises a network interface for transmitting module-specific data to a control device and analyzing the same. The data network is designed as a self-organizing network, in particular as a self-organizing meshed radio network.

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole after the third step.

Abstract: A roof panel with an integrated photovoltaic module is discussed. The roof panel has at least a substrate and an outer pane, which are laminarily bonded to each other via a thermoplastic layer, and embedded in the thermoplastic layer, at least one photovoltaic system that contains at least two strip-shaped solar cells that are connected in series via at least one electrically conductive connecting element.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer within the singulation lines using a pressurized fluid applied to the carrier tape.

Abstract: An object is to provide a light-emitting module in which a light-emitting element suffering a short-circuit failure does not cause wasteful electric power consumption. Another object is to provide a light-emitting panel in which a light-emitting element suffering a short-circuit failure does not allow the reliability of an adjacent light-emitting element to lower. Focusing on heat generated by a light-emitting element suffering a short-circuit failure, provided is a structure in which electric power is supplied to a light-emitting element through a positive temperature coefficient thermistor (PTC thermistor) thermally coupled with the light-emitting element.

Abstract: A lamination stack for etching solar cells is provided. At least two solar cell wafers are attached to corresponding backplane sheets which are larger than the solar cell wafers. Release layers larger than the solar cells and smaller than the backplane sheets are positioned on the backplane sheets on the opposite side of the attached solar cell wafers. The backplane sheets are bonded together along the exposed peripheral boundary formed by the release layers.

Abstract: A roof panel having an integrated photovoltaic module is described. The roof panel has at least a substrate and an outer panel, which are laminarily bonded to each other by means of a thermoplastic layer, wherein a photovoltaic layer system is embedded in the thermoplastic layer and the substrate contains at least one polymer.

Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.

Abstract: A wafer packaging method includes the following steps. A light transmissive carrier is provided. A hydrolytic temporary bonding layer is formed on the light transmissive carrier. A first surface of a light transmissive protection sheet is bonded to the hydrolytic temporary bonding layer, such that the hydrolytic temporary bonding layer is located between the light transmissive protection sheet and the light transmissive carrier. A second surface of the light transmissive protection sheet facing away from the first surface is bonded to a third surface of a wafer. The light transmissive carrier, the hydrolytic temporary bonding layer, the light transmissive protection sheet, and the wafer are immersed in a high temperature liquid, such that adhesion force of the hydrolytic temporary bonding layer is eliminated. The light transmissive protection sheet and the wafer are obtained from the high temperature liquid.

Abstract: A solar cell module and a method for manufacturing the same are disclosed. The solar cell module includes a first solar cell and a second solar cell each including a plurality of first electrodes formed on a back surface of a semiconductor substrate, a plurality of second electrodes which are formed in parallel with the plurality of first electrodes on the back surface of the semiconductor substrate, a first auxiliary electrode connected to the plurality of first electrodes, and a second auxiliary electrode connected to the plurality of second electrodes, and an interconnector for electrically connecting the first auxiliary electrode of the first solar cell to the second auxiliary electrode of the second solar cell.

Abstract: The invention disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

Abstract: There is provided a solid-state imaging device including: a semiconductor substrate that is formed with a photodiode for each pixel; a light shielding film that is laminated on the semiconductor substrate on a side of a light irradiated surface which is irradiated with light, and is formed to include an opening corresponding to a spot in which at least the photodiode is arranged; and a photoelectric conversion film that is laminated to cover the light irradiated surface of the semiconductor substrate and the light shielding film, and is configured to generate an electrical charge by absorbing light. The photoelectric conversion film is formed of a material which has higher light absorptivity than light absorptivity of the semiconductor substrate.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a first graded interlayer adjacent to the second solar subcell; the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the first graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell; the second graded interlayer having a fifth band gap greater than the fourth band gap; and a lower fourth solar subcell is provided adjacent to the second graded interlayer, the lower fourth subcell having a sixth band gap smaller than the fourth band gap such that the fourth subcell is lattice mismatched with respect to the third subcell.

Abstract: A solar cell module is manufactured by forming silicone coating films (2, 2) on panels (1a, 1b), placing a solar cell matrix (3) on the silicone coating film on panel (1a), providing a seal member (4) consisting of a base seal member (4a) of butyl rubber and protrusive seal segments (4b) of butyl rubber on a peripheral region of panel (1a), mating the two panels together such that the seal member (4) may abut against a peripheral region of panel (1b), and the solar cell matrix (3) may be sandwiched between the silicone coating films (2), and compressing and heating the mated panels (1a, 1b) in vacuum for establishing a seal around the solar cell matrix (3).

Abstract: One embodiment of the present invention provides a solar panel. The solar panel includes a plurality of subsets of solar cells. The solar cells in a subset are coupled in series, and the subsets of solar cells are coupled in parallel. The number of solar cells in a respective subset is sufficiently large such that the output voltage of the solar panel is substantially the same as an output voltage of a conventional solar panel with all of its substantially square shaped solar cells coupled in series.

Abstract: A solar cell module includes a solar cell module body (11), an adhesive (30), and a support rail (12) bonded and fixed by the adhesive (30) to a back surface of the solar cell module body (11), in which a spacer member (40) for ensuring the thickness of the adhesive (30) is arranged between the back surface of the solar cell module body (11) and an adhesive surface (12a1) of the support rail (12).

Abstract: Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent top sheet having a conductive grid pattern facing the cells. Methods of manufacturing photovoltaic modules including integrated multi-cell interconnections are provided. Methods may include steps of coordinating, integrating, and registering multiple rolls of substrates in continuous processes.

Abstract: This solar cell module is provided with a plurality of solar cells, and connecting members that connect the solar cells to each other. The area of each of the bonding layers that bonds each of the connecting members to the light receiving surface of each of the solar cells is larger than the area of each of the bonding layers that bonds each of the connecting members to the rear surface of each of the solar cells.