Abstract: The present invention relates to a novel compound for improving the photostability of an optoelectronic device, and more particularly, to a novel phenanthroline-based compound, a preparation method thereof, and an optoelectronic device including the same as a passivation layer. According to the present invention, the novel phenanthroline-based compound of Formula 1 is a novel compound in which an amine group side chain is introduced into the parent nucleus of phenanthroline, and is capable of being used in a solution process due to excellent solubility in a polar solvent, and simple introduction on an n-type semiconductor organic layer (e.g., an organic photoactive layer or an electron transport layer) as a passivation layer may bring about not only an increase in stability, but also an additional increase in efficiency such as an increase in open-circuit voltage or photocurrent.

Abstract: A photovoltaic laminate is disclosed. Embodiments include placing a first encapsulant on a substantially transparent layer that includes a front side of a photovoltaic laminate. Embodiments also include placing a first solar cell on the first encapsulant. Embodiments include placing a metal foil on the first solar cell, where the metal foil uniformly contacts a back side of the first solar cell. Embodiments include forming a metal bond that couples the metal foil to the first solar cell. In some embodiments, forming the metal bond includes forming a metal contact region using a laser source, wherein the formed metal contact region electrically couples the metal foil to the first solar cell. Embodiments can also include placing a backing material on the metal foil. Embodiments can further include forming a back layer on the backing material layer and curing the substantially transparent layer, first encapsulant, first solar cell, metal foil, backing material and back layer to form a photovoltaic laminate.

Abstract: A method for manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer on a semiconductor substrate; etching the dielectric layer to form a via hole that exposes the conductive layer; depositing a barrier layer to line the via hole; after depositing the barrier layer, depositing a first metal layer to fill a remainder of the via hole; performing a chemical mechanical polishing (CMP) process on the first metal layer until the barrier layer is exposed; after performing the CMP process, depositing a second metal layer over the barrier layer and the first metal layer; and etching the second metal layer to form a metal line.

Abstract: Coverglass is disposed over an image sensor. The coverglass includes a trench extending a depth into the coverglass. The trench is configured to receive a lens assembly and the lens assembly may be bonded to the trench.

Abstract: The invention relates to a method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving contact behaviour between the contact grid and the emitter layer of silicon solar cells, which method is used after the contacting of these solar cells and thus reduces the scrap quota of solar cells with faulty contacting. In order to achieve this object, a method is proposed which has the following method steps. First a silicon solar cell (1) is provided with the emitter layer, the contact grid (5) and a back contact (3). Then the contact grid (5) is electrically contacted by a contact pin matrix (8) or contact plate connected to one terminal of a current source and the back contact (3) is electrically connected by a contact device connected to the other terminal of the current source.

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.

Abstract: An electroconductive film including a resin layer and an electroconductive layer, wherein the resin layer has a storage elastic modulus at 25° C. of more than 10 MPa and less than 1,000 MPa, and the electroconductive layer has a surface resistance value of 1,000 ?/sq. or less.

Abstract: Provided is a modified elastomer composition comprising components (A), (B?), and (D), wherein components (A), (B?) and (D) are grafted with component (E), component (A) comprises an ethylene-?-olefin-non-conjugated diene copolymer rubber, component (B?) comprises an ethylene-?-olefin copolymer rubber whose melting end peak temperature measured using a differential scanning calorimeter (DSC) is 90° C. or higher, component (D) comprises an unsaturated silane compound, and component (E) comprises a peroxide.

Abstract: A molded photosensitive assembly of a camera module includes at least one supporting member formed by a first substance, at least one photosensitive element, at least one circuit board, at least one set of wires electrically connecting the photosensitive element to the circuit board, and at least one molded base. Two ends of each of the wires are respectively connected to a chip connector of the photosensitive element and a circuit connector of the circuit board. The molded base is formed by a second substance and comprises a molded body and has at least one light window, wherein the photosensitive element and the wires are protected by a supporting member which is provided for avoiding an upper mold of a molding-die pressing on the wires during the molding process.

Abstract: The present disclosure provides a buffer structure, a display panel, and a manufacturing method of the buffer structure. The display panel comprises at least one of the buffer structures. The buffer structure comprises a first inorganic layer, a second inorganic layer, and an organic layer. Trapezoidal grooves are disposed at intervals on one side surface of the first inorganic layer; the second inorganic layer is disposed on one side surface having the trapezoidal grooves of the first inorganic layer, covers inside surfaces of the trapezoidal grooves, is connected at openings of the trapezoidal grooves, and forms capillary channels; and the organic layer is filled inside the capillary channels.

Abstract: Provided is a resin film for an electronic device including: a resin containing a polymer; hygroscopic particles dispersed in the resin and having a primary particle diameter of 200 nm or less; and a dispersant, wherein an absolute value of a difference in refractive index between the resin and the particles is 0.05 or less. The resin is preferably a thermoplastic resin, and more preferably a thermoplastic elastomer. The polymer is preferably one or more types selected from an aromatic vinyl compound-conjugated diene copolymer and a hydrogenated aromatic vinyl compound-conjugated diene copolymer. An electronic device including the resin film for an electronic device is also provided.

Abstract: A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.

Abstract: A method for fabricating an image-sensor chip-scale package includes bonding, with temporary adhesive, a glass wafer to a device wafer including an array of image sensors. The method also includes forming an isolated-die wafer by removing, from the device wafer, each of a plurality of inter-sensor regions each located between a respective pair of image sensors of the array of image sensors. The isolated-die wafer includes a plurality of image-sensor dies each including a respective image sensor, of the array of image sensors, bonded to the glass wafer. The method also includes encapsulating the isolated-die wafer to form an encapsulated-die wafer; removing, from each of the plurality of image-sensor dies, a respective region of the glass wafer covering the respective image sensor; and singulating the encapsulated-die wafer.

Abstract: Techniques are provided for an inductor at a second level interface between a first substrate and a second substrate. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first substrate, second conductive traces of a second non-semiconductor substrate, and a plurality of connectors configured to connect the first substrate with the second substrate. Each connector of the plurality of connectors can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

Abstract: The invention to a method of making an interconnector assembly for electrically interconnecting solar cells, wherein the method comprises: feeding a plurality of (preferably elongated) electrical conductors that form an conductor array defining interspaces that are free from conductors; and applying at least one sheet, preferably made of electrically insulating material, to a side of the conductor array, wherein the sheet has at least one contact zone coming into contact with the conductors and intermediate portions overlapping with the interspaces of the conductor array. The invention also refers to an apparatus for fabricating an interconnector assembly for electrically interconnecting solar cells and to a rotatable heating drum.

Abstract: The invention is a method for manufacturing an organic electronic device sealing body, adhesively integrating an organic electronic device with a sheet-like sealant made of a modified hydrocarbon-based soft resin having an alkoxysilyl group, the method comprising steps of: step [1]: laminating the organic electronic device and the sheet-like sealant to obtain a laminate; step [2]: putting the resulting laminate into a resin bag, degassing the bag, and then sealing the bag containing the laminate; and step [3]: placing the sealed bag under a pressure of 0.1 MPa or higher to adhesively integrate the laminate. One aspect of the invention provides a method for manufacturing an organic electronic device sealing body which allows industrially-advantageous sealing of the organic electronic device including organic functional elements such as an organic EL element and an organic semiconductor element.

Abstract: A method of bonding solar cell component to a support and the solar cell assembly thus obtained. The method of bonding solar cell component to a support comprises: disposing metallized traces on the support; dispensing bonding adhesive on front of the support or on back of the solar cell component; and laying down the solar cell component on the support and soldering the solar cell component to the metallized traces on the support. The support is a glass support with integrated circuits.

Abstract: There is provided solid-state imaging devices and methods of forming the same, the solid-state imaging devices including: a semiconductor substrate; a glass substrate; an adhesion layer provided between the semiconductor substrate and the glass substrate; and a warpage correction film provided adjacent to one of the semiconductor substrate and the glass substrate.

Abstract: A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

Abstract: It is an object of the present invention to easily and inexpensively provide a structure of effectively utilizing a light incident on an invalid area of a solar cell. Moreover, it is another object to improve output characteristics of the solar cell by effectively utilizing the light. The gist of the present invention resides in a solar battery module in which plate-like solar cells are held between a light penetrable sheet member on a light receiving surface side and a sheet member on a back surface side, and internal apertures are filled. with a sealing resin, wherein a light diffusion section for diffusely reflecting a light or a light diffusion section of a white color is arranged in an invalid region of each solar cell.

Abstract: A method of preparing two dimension bent X-ray crystal analyzers in strips feature is provided. A crystal wafer in strips is bonded to a curved substrate which offers the desired focus length. A crystal wafer in strips is pressed against the surface of the substrate forming curved shape by anodic bonding or glue bonding. The bonding is permanently formed between crystal wafer and its substrate surface, which makes crystal wafer has same curvature as previously prepared substrate.

Abstract: A solar cell module production method involves applying an adhesive on a light-receiving surface and a rear surface of a solar cell having electrodes on the light-receiving surface and the rear surface, and positioning and attaching a wiring material on the adhesive. Specifically, the solar cell, which is positioned with the light-receiving surface facing upward, is inverted so that the rear surface is facing upward, and the adhesive is applied on the rear surface; and then the solar cell is inverted once again so that the light-receiving surface is facing upward, and the adhesive is applied to the light-receiving surface.

Abstract: An optical sensor device comprises an element-mounting portion, an optical sensor element provided on the element-mounting portion, a lead having a first contact region connected to the optical sensor element and a second contact region for an external connection, and a resin-encapsulating portion which covers at least a light-receiving plane of the optical sensor element. The resin-encapsulating portion comprises a resin and a glass filler including borosilicate glass dispersed in the resin. The transmissivity of the resin-encapsulating portion in one example is equal to or more than 40% in a wavelength range between 300 nm to 400 nm, and in another example is equal to or more than 60% in a wavelength range between 300 nm and 350 nm.

Abstract: An interconnected arrangement of photovoltaic cells is achieved using laminating current collector electrodes. The electrodes comprise a pattern of conductive material extending over a first surface of sheetlike substrate material. The first surface comprises material having adhesive affinity for a selected conductive surface. Application of the electrode to the selected conductive surface brings the first surface of the sheetlike substrate into adhesive contact with the conductive surface and simultaneously brings the conductive surface into firm contact with the conductive material extending over first surface of the sheetlike substrate. Use of the laminating current collector electrodes allows facile and continuous production of expansive area interconnected photovoltaic arrays.

Abstract: A chip module comprises a carrier, having a first main surface and a second main surface opposite to the first main surface. A first recess structure is arranged in the carrier in the first main surface, and a chip is arranged in the first recess structure of the carrier. A patterned metallization layer is deposited on the second main surface of the carrier, the metallization layer having a first metallization structure and a second metallization structure, the first metallization structure being electrically isolated from the second metallization structure. The chip is electrically connected to the first metallization structure and the second metallization structure. The chip module comprises in particular an RFID chip and is suited to be connected to a textile substrate by way of laser reflow soldering.

Abstract: A method of fabricating a thin film photovoltaic device is provided. The method subjects a soda lime glass substrate having a front side, backside, and edges to a first cleaning process and forms a first coating of silicon dioxide overlying the backside and the edges. The method further subjects the substrate to a second cleaning process and forms a second coating of silicon dioxide overlying the front side and the edges of the substrate. Furthermore, the method includes causing a barrier layer comprising the first coating and the second coating to encapsulate entirely the front side, backside, and edges. The barrier layer includes at least a thickness of oxygen rich silicon dioxide to contain any sodium bearing material within the substrate. Moreover, the method includes forming a thickness of metal material overlying the second coating on the front side followed by an absorber material and window material plus a top electrode.

Abstract: A base body includes a fiducial stage part provided with an inner terminal group, and an upper stage part located at a side of an outer edge of a package with respect to the fiducial stage part and protruding with respect to the fiducial stage part through a step part. A frame body is bonded to the upper stage part, and an inner edge of the frame body is located at the side of the outer edge of the package with respect to the step part.

Abstract: A method of disinfection and lighting by using LEDs and an LED device thereof are provided. Two kinds of LEDs, i.e., the lighting LEDs, and the UV-LEDs, are fixed on a circuit board evenly and mixedly in a certain way, and a separator is also provided on the circuit board. Meanwhile, a controlling circuit module having a function of mode switching controls the UV-LEDs and the lighting LEDs, in such a manner that the functions of UV-LED disinfection and LED lighting are combined well in a same device. The method replaces a conventional method of sterilization and disinfection using ultraviolet (UV) rays emitted by a low pressure mercury vapor lamp. After being treated with light distribution by the separator, directionality of light emitted by the LED is stronger, and the LED is easier to operate.

Abstract: Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.

Abstract: A method for processing a thin film photovoltaic module. The method includes providing a plurality of substrates, each of the substrates having a first electrode layer and an overlying absorber layer composed of copper indium gallium selenide (CIGS)or copper indium selenide (CIS) material. The absorber material comprises a plurality of sodium bearing species. The method maintains the plurality of substrates in a controlled environment after formation of at least the absorber layer through one or more processes up to a lamination process. The controlled environment has a relative humidity of less than 10% and a temperature ranging from about 10 degrees Celsius to about 40 degrees Celsius. The method subjects the plurality of substrates to a liquid comprising water at a temperature from about 10 degrees Celsius to about 80 degrees Celsius to process the plurality of substrates after formation of the absorber layer.

Abstract: In various embodiments, a method for fitting contact wires to a surface of a photovoltaic cell is provided. The method may include: feeding the contact wires to a contact wire positioning and placement device, wherein the contact wire positioning and placement device comprises a plurality of nozzles or eyes, wherein at least one contact wire is in each case passed through a respective nozzle or eye, for positioning and placement thereof onto the surface of the photovoltaic cell; positioning and placing the contact wires on the surface of the photovoltaic cell by means of the contact wire positioning and placement device; and attaching the contact wires to the surface of the photovoltaic cell.

Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.

Abstract: Provision is a radiation detector that allows eliminating short between electric wires crossing over each other via an interlayer insulating layer and thus suppression of defective detecting elements. A construction of this embodiment has a design idea that eliminates short between electric wires of an amorphous selenium layer and an active matrix substrate. Specifically, the electric wires are in a position covered with a thick center portion of the amorphous selenium layer. This ensures to separate the electric wires away from an electrode layer, achieving provision of a radiation detector capable of being used for a long period of time.

Abstract: The present invention relates to a camera module including: a lens unit mounted with at least one or more lenses; an image sensor mounted with an image pickup device for converting a light converged through the lenses to an electric signal; a PCB (Printed Circuit Board) mounted with the image sensor; and a holder accommodated inside the lens unit for supporting the lens unit, wherein the lens unit is bonded and fixed at an inner surface of the holder, whereby the lens unit mounted with a plurality of lenses is bonded to a lateral surface of a holder to prevent generation of vertical tilting phenomenon at the lens unit caused by a conventional improper coating of epoxy, and particularly, the coating of epoxy on the lateral surface of the holder advantageously enhances adhesive power to increase a bonded area.

Abstract: An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive path between the front side and the back side of the semiconductor body; and a conductive contact, defining a conductive path on the front side of the semiconductor body, between the active area and the vertical conductive connection, wherein the vertical conductive connection is formed on the lateral surface of the die, outside the active area.

Abstract: An infrared detecting element includes a recessed portion, a supporting section, and an infrared detecting section. A supporting section is located above the recessed portion such that a hollow space stands between the supporting section and the recessed portion. The infrared detecting section is provided on the supporting section and detects infrared rays. The recessed portion is covered with a water repellent film, and the supporting section is made of a material that has high rigidity compared to silicon and silicon oxide.

Abstract: A back electrode type solar cell in which a no-electrode-formed region where no electrode is placed is provided in a part of a peripheral portion of a back surface of the back electrode type solar cell such that a line connecting end portions of a plurality of electrodes to one another includes a partially inwardly recessed region and the no-electrode-formed region is located adjacent to each of an electrode for n-type and an electrode for p-type adjacent to each other, a solar cell module, a method of manufacturing a back electrode type solar cell with interconnection sheet, and a method of manufacturing a solar cell module are provided.

Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.

Abstract: A chip package structure includes a nanometer deposition layer and a chip having an electrical connection circuit, a photo sensing region and a plurality of electrical connection pads. The electrical connection pads and the photo sensing region are formed on the upper surface of the chip. The photo sensing region is covered with the nanometer deposition layer, which exposes the electrical connection pads. The nanometer deposition layer is used to provide electrical insulation, isolation and protection. The method for manufacturing the chip package structure includes cleaning the wafer with the chips, forming the nanometer deposition layer, and scribing the wafer to separate the chips. The present invention replaces the process of mold filling by directly forming the nanometer deposition layer so as to simplify the manufacturing steps, reduce the cost and facilitate the production, thereby shrinking the size of the chip package.

Abstract: The present invention relates to a multilayer film for the encapsulation of photovoltaic cells, comprising: (a) at least a first, outer thermoplastic polymer layer;(b) a second thermoplastic polymer intermediate layer arranged between the first and the third layer, and (c) a second, outer thermoplastic polymer layer, wherein at least one of layers (a), (b) or (c) is opaque.

Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.

Abstract: An optical sensor element is mounted in a package which includes a glass substrate having a cavity, and a glass lid substrate bonded to the other substrate to close the cavity. The glass substrate with the cavity has metalized wiring patterns on front and rear surfaces thereof, and a through hole filled with metal to form a through-electrode interconnecting the wiring patterns on the front and rear surfaces. A metalized wiring pattern on the rear surface of the glass lid substrate is electrically connected to the wiring pattern on the front surface of the other substrate with an adhesive containing conductive particles. The glass lid substrate is made either of glass having a filter function or glass having a light shielding property with an opening therethrough filled with glass having a filter function.

Abstract: A method of producing a bulk semiconductor material comprises the steps of providing a base comprising a substantially planar substrate having a plurality of etched nano/micro-structures located thereon, each structure having an etched, substantially planar sidewall, wherein the plane of each said etched sidewall is arranged at an oblique angle to the substrate, and selectively growing the bulk semiconductor material onto the etched sidewall of each nano/micro-structure using an epitaxial growth process. A layered semiconductor device may be grown onto the bulk semiconductor material.

Abstract: An encapsulating sheet for solar cell for encapsulating a solar cell, in which, in a case in which a square sheet obtained by cutting the sheet so that a planar shape becomes a square shape is heated at the atmospheric pressure and 150° C. for 15 minutes and is thus thermally shrunk, when a length of one side of the square sheet before being thermally shrunk is represented by L, a direction in parallel with a first side is considered as a first direction, and a direction perpendicular to the first side is considered as a second direction, and in the thermally-shrunk square sheet, a shortest length in the first direction is represented by M1, and a shortest length in the second direction is represented by M2, 0?|(M1?M2)/L|?0.4 is satisfied.

Abstract: A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×1014 cm?2, and locally exceeding 1022 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Abstract: An apparatus, method, and system, the apparatus and system including a flexible microsystems enabled microelectronic device package including a microelectronic device positioned on a substrate; an encapsulation layer encapsulating the microelectronic device and the substrate; a protective layer positioned around the encapsulating layer; and a reinforcing layer coupled to the protective layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device. The method including encapsulating a microelectronic device positioned on a substrate within an encapsulation layer; sealing the encapsulated microelectronic device within a protective layer; and coupling the protective layer to a reinforcing layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device.

Abstract: This invention relates to photovoltaic modules wherein a polyethylene composition is used as an alternative, in whole or in part, to traditional ethylene vinyl acetate (EVA) resins in at least one layer. The polyethylene compositions are especially useful in the encapsulant and/or backsheet layers of photovoltaic modules. The polyethylene compositions comprise units derived from at least one C4 to C6 alpha-olefin comonomer, and have densities of 0.86 g/cm3 to 0.91 g/cm3.

Abstract: In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.