Abstract: An image sensor element includes: a first pixel having a first photoelectric conversion part, a first accumulation part which accumulates electric charge generated by the first photoelectric conversion part, and a first output part based on a voltage of the first accumulation part; a second pixel having a second photoelectric conversion part, a second accumulation part wherein electric charge generated by the second photoelectric conversion part, and a second output part which a second signal based on a voltage of the second accumulation part; an output line to which the first and the second output parts are connected and from which the first and second signals are output; and a control unit which is able to control the voltage of the first accumulation part to be a first voltage and ability to control the voltage of the second accumulation part to be a second voltage different from the first voltage.

Abstract: Methods of producing an optical surface atop an exterior of a substrate that includes smoothing the exterior using an ALD process to sequentially deposit ALD layers to produce one or more ALD films that fill spaces between spaced-apart asperities existing on the exterior, and thereafter depositing a reflective material on the smoothed exterior of the substrate to produce the optical surface. The smoothing resulting from depositing the ALD film on the exterior of the substrate causes the grain size of the reflective material to be reduced in comparison to the grain size that would exists without having deposited the ALD film on the exterior of the substrate. The smoothing is sufficient to cause a reduction in grain size that results in a reduction in plasmon absorption in the optical surface in comparison to the plasmon absorption that would otherwise exist without having reduced the grain size of the reflective material.

Abstract: A pixel sensor may include a layer stack to reduce and/or block the effects of plasma and etching on a photodiode and/or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and/or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.

Abstract: A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.

Abstract: An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.

Abstract: A measurement system including an imaging device and a plasma processing device having a plasma generator configured to generate plasma from a gas supplied into a processing chamber and a controller. The imaging device is configured to generate optical information of the plasma from image data of imaged plasma in the processing chamber, and the controller is configured to convert the generated optical information of the plasma into a plasma parameter that determines physical characteristics of the plasma with reference to a storage that stores correlation information between the optical information of the plasma and measurement results of the plasma parameter.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: An image capture unit has mounted in a frame: a first imaging assembly, a first circuit board, a second imaging assembly, and a second circuit board. The first imaging assembly is mounted on the first circuit board. The second imaging assembly is mounted on the second circuit board. A portion of the first circuit board and a portion of the second circuit board have a stacked configuration with the portion of the first circuit board being approximately parallel to the portion of the second circuit board. An end of another portion of the first circuit board is adjacent to an end of another portion of the second circuit board.

Abstract: Display device has display region of pixels including first pixel arranged in central portion of the display region and second pixel arranged between the first pixel and the edge of the display region. Each pixel includes first and second light emitting elements. Color filter layer is arranged on the first and second light emitting elements. The first light emitting element includes first color filter, and opening of the first light emitting element is defined by the color filter layer. The second light emitting element includes second color filter and having spectral transmittance characteristic different from the first color filter. Ratio of size of the opening to size of light emitting region of the first light emitting element is smaller in the second pixel than in the first pixel.

Abstract: Embodiments of the invention provide an improved biosensor for biological or chemical analysis. According to embodiments of the invention, backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors can be used to effectively analyze and measure fluorescence or chemiluminescence of a sample. This measured value can be used to help identify a sample. Embodiments of the invention also provide methods of manufacturing an improved biosensor for biological or chemical analysis and systems and methods of DNA sequencing.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements. The solid-state image sensor also includes a mosaic pattern layer disposed above the photoelectric conversion elements. The mosaic pattern layer includes an infrared-passing segment and color filter segments disposed on the periphery of the infrared-passing segment. The solid-state image sensor further includes a first condensing structure disposed on the mosaic pattern layer. The infrared-passing segment and the color filter segments share the first condensing structure.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

Abstract: Provided is an image sensor including a substrate, in which a pixel area including a plurality of unit pixels, an optical black area located outside of the pixel area, and an alignment key area located outside of the pixel area are included, the substrate having a first surface and a second surface opposing the first surface, an interconnection structure below the first surface of the substrate, photoelectric conversion elements in the pixel area of the substrate, an insulating layer on the second surface of the substrate, a grid layer on the insulating layer in the pixel area and the alignment key area, a key pattern layer between the insulating layer disposed in the alignment key area and the grid layer disposed in the alignment key area, the key pattern layer including a protruding region to correspond to the grid layer, and color filters on the insulating layer and the grid layer in the pixel area.

Abstract: A photo-current amplification apparatus is provided. The photo-current amplification apparatus includes a photo-detecting device including: a substrate; an absorption region comprising germanium, the absorption region supported by the substrate and configured to receive an optical signal and to generate a first electrical signal based on the optical signal; an emitter contact region of a conductivity type; and a collector contact region of the conductivity type, wherein at least one of the emitter contact region or the collector contact region is formed outside the absorption region, and wherein a second electrical signal collected by the collector contact region is greater than the first electrical signal generated by the absorption region.

Abstract: A backside illuminated image sensor and a method of manufacturing the same are disclosed. The backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, a second bonding pad formed with a constant thickness on a bottom surface and an inner side surface of the recess to form a second recess in the recess and electrically connected with the bonding pad, and a third bonding pad formed in the second recess to fill the second recess.

Abstract: Techniques are disclosed for facilitating dual color detection. In one example, an imaging device includes a first pixel configured to detect first image data associated with a first waveband of electromagnetic radiation. The imaging device further includes a second pixel configured to detect second image data associated with a second waveband of the electromagnetic radiation, where at least a portion of the second waveband does not overlap the first waveband. The imaging device further includes a bias circuit configured to apply a first voltage between the first pixel and a first ground contact, and apply a second voltage between the second pixel and a second ground contact. The first voltage is different from the second voltage. Related methods are also provided.

Abstract: A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

Abstract: A solid-state image sensor includes a first color filter and a second color filter having different thicknesses and configured to transmit light in predetermined wavelength regions, light-receiving devices configured to receive the light in the predetermined wavelength regions passing through the first color filter and the second color filter, and a light amount compensator configured to compensate for an amount of the light passing through the first color filter or the second color filter.

Abstract: The present invention provides a vapor-permeable flexible sensing platform unit comprising: a first porous membrane, wherein said membrane is substantially flexible and hydrophobic; and a volatile organic compounds (VOCs) sensor disposed on said membrane, the VOCs sensor comprising an electrode array and a conducting polymer porous film being in electric contact with said electrode array, wherein the VOCs sensor is insensitive to lateral strain. Further provided are a method of preparation of said platform unit and a lift-off, float-on (LOFO) method for the preparation of protonically doped polyaniline (PANI) thin films.

Abstract: Provided are a structural body including: a light detection layer 10, a color separation layer 20 provided on a light incident side of the light detection layer 10, and an optical waveguide layer 30 provided on the light incident side of the light detection layer 10 and provided on at least one selected from a light incident side of the color separation layer 20 or a light transmitting side of the color separation layer 20, in which the optical waveguide layer 30 is a layer which transmits light incident at an angle of 0° to 40° with respect to a normal line of a light receiving surface 10a of the light detection layer 10 by changing a traveling angle of the incident light to an angle of 0° to 1° with respect to the normal line of the light receiving surface 10a of the light detection layer 10; and a solid-state imaging element and an image display device including the structural body.

Abstract: A color-converting substrate includes a color-converting part including a wavelength-converting particle configured to change a wavelength of an incident light to emit a light having a color different from the incident light, a color filter pattern filtering the light emitted from the color-converting part, and a light-reflective layer disposed between the color-converting part and the color filter pattern to selectively reflect a light having a wavelength same as the wavelength of the incident light.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

Abstract: A method of fabricating a semiconductor device includes receiving a device substrate; forming an interconnect structure on a front side of the device substrate; and etching a recess into a backside of the device substrate until a portion of the interconnect structure is exposed. The recess has a recess depth and an edge of the recess is defined by a sidewall of the device substrate. A conductive bond pad is formed in the recess, and a first plurality of layers cover the conductive bond pad, extend along the sidewall of the device substrate, and cover the backside of the device substrate. The first plurality of layers collectively have a first total thickness that is less than the recess depth. A first chemical mechanical planarization is performed to remove portions of the first plurality of layers so remaining portions of the first plurality of layers cover the conductive bond pad.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation.

Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

Abstract: An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor. The method includes forming a photodetector in a substrate. A lower interconnect portion of an interconnect structure is formed over the photodetector. A removal process is performed to define a first opening overlying the photodetector in the lower interconnect portion. A lower etch stop layer is formed lining the first opening. The lower etch stop layer has a U-shape in the first opening. An upper interconnect portion of the interconnect structure is formed over the lower etch stop layer. A light pipe structure is formed overlying the photodetector. The U-shape of the lower etch stop layer extends continuously along sidewalls and a bottom surface of the light pipe structure.

Abstract: An image sensor is provided to include: one or more first grid structures arranged in rows and columns of a pixel array including imaging pixels arranged in rows and columns, the first grid structures structured to separate the imaging pixels from one another and including a low refractive-index material or an air to provide an optical isolation between two adjacent imaging pixels; and a gap region disposed between the first grid structures and configured to physically isolate the first grid structures from each other, wherein the first grid structures comprise a first capping layer covering the low refractive-index material or the air.

Abstract: An imaging device and electronic apparatus incorporating an imaging device are provided. The imaging device includes a substrate and a plurality of photoelectric conversion units formed in the substrate. Each photoelectric conversion unit in the plurality of photoelectric conversion units is associated with at least one corresponding color filter in the plurality of color filters. The imaging device further includes a plurality of infrared light filters, wherein at least some of the photoelectric conversion units in the plurality of photoelectric conversion units are associated with at least one corresponding infrared light filter in the plurality of infrared light filters.

Abstract: Disclosed are an optical filter including a near infrared absorption layer on a polymer film. The polymer film has a* of about ?5.0 to about +5.0 and b* of about ?5.0 to about +5.0 in a color coordinate expressed by a CIE Lab color space. The near infrared absorption layer may be configured to transmit light in a visible region and to selectively absorb at least one part of light in a near infrared region. The near infrared absorption layer includes a first near infrared absorption material including a copper phosphate ester compound and a second near infrared absorption material including at least two different organic dyes. The second near infrared absorption material has a maximum absorption wavelength (?max) in a wavelength region of about 650 nm to about 1200 nm. An electronic device may include the optical filter.

Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.

Abstract: Disclosed are a combination structure including a nanostructure array including a plurality of nanostructures with a smaller dimension than the near-infrared wavelength are repeatedly arranged and a light absorption portion adjacent to the nanostructure array and including a near-infrared absorbing material configured to absorb light in at least a portion of near-infrared wavelength regions, an optical filter, an image sensor, a camera module, and an electronic device including the same.

Abstract: A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Abstract: Provided is an image sensor including a semiconductor substrate including a first surface and a second surface and a plurality of pixel regions spaced apart, the plurality of pixel regions including a first region including a plurality of image pixels configured to generate image data and a second region including a plurality of phase difference detection pixels configured to perform autofocusing, a first grid pattern including a plurality of groove portions disposed on the second surface, a plurality of first microlenses selectively disposed on bottom surfaces of the plurality of groove portions corresponding to at least one of the first region and the second region, a plurality of color filters filling the plurality of groove portions, respectively, a second grid pattern superimposed on the first grid pattern, and a plurality of second microlenses separated by the second grid pattern and disposed on the plurality of color filters, respectively.

Abstract: An optical filter (1a) includes a light-absorbing layer (10). The light-absorbing layer absorbs light in at least a portion of the near-infrared region. When light with a wavelength of 300 nm to 1200 nm is incident on the optical filter (1a) at incident angles of 0°, 30°, and 40°, the optical filter (1a) satisfies given transmittance requirements. Nine differences each obtained as a difference between one and another of IE?xR, IE?yG, and IE?zB defined for incident angles ?° of 0°, 30°, and 40° satisfy given requirements, and ranges satisfy given requirements, each range being a difference obtained by subtracting the smallest value of three differences from the largest value of the three differences, the three differences obtained from IE?xR, IE?yG, and IE?zB collectively defined for the same pair selected from the incident angles ?°.

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract: Photosensors may be formed on a front side of a semiconductor substrate. An optical refraction layer having a first refractive index may be formed on a backside of the semiconductor substrate. A grid structure including openings is formed over the optical refraction layer. A masking material layer is formed over the grid structure and the optical refraction layer. The masking material layer may be anisotropically etched using an anisotropic etch process that collaterally etches a material of the optical refraction layer and forms non-planar distal surface portions including random protrusions on physically exposed portions of the optical refraction layer. An optically transparent layer having a second refractive index that is different from the first refractive index may be formed on the non-planar distal surface portions of the optical refraction layer. A refractive interface refracts incident light in random directions, and improves quantum efficiency of the photosensors.

Abstract: A color-converting substrate includes a color-converting part including a wavelength-converting particle configured to change a wavelength of an incident light to emit a light having a color different from the incident light, a color filter pattern filtering the light emitted from the color-converting part, and a light-reflective layer disposed between the color-converting part and the color filter pattern to selectively reflect a light having a wavelength same as the wavelength of the incident light.

Abstract: Designs of image sensing devices by including a substrate layer including a plurality of photoelectric conversion elements, a plurality of grid structures disposed over the substrate layer, a plurality of color filter layers each of which is disposed between adjacent grid structures, a plurality of over-coating layers formed over the color filter layers, and a plurality of microlenses formed over the over-coating layers. Each of the grid structures includes an air layer, and a capping film formed to cap the air layer, and an upper portion of the air layer is formed to protrude upward from the over-coating layer.

Abstract: An optical sensor structure is provided. The optical sensor structure includes a substrate, a light sensing unit, a peripheral wall, and a reflective layer. The substrate includes a plurality of metal pads. The light sensing unit is disposed on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is disposed on the substrate, and the peripheral wall and the substrate define an accommodating space. The metal pads and the light sensing unit are positioned in the accommodating space. The reflective layer is disposed in the accommodating space and surrounds the light sensing unit.

Abstract: The present application provides an organic light-emitting diode display. The display includes a plurality of pixel defining units, the pixel defining unit includes a first portion formed on a switch array layer which is not covered by anode electrodes and a second portion formed on the anode electrode, a groove is defined at the first portion, and at least one opening is defined at the second portion; an organic light-emitting layer including a plurality of organic light-emitting units, the organic light-emitting layer is formed on the anode electrodes which are not covered by the second portion.

Abstract: In a manufacturing method of a semiconductor device according to an embodiment, a first substrate having a first elastic modulus is joined onto a second substrate having a second elastic modulus higher than the first elastic modulus. A first semiconductor element is formed on the first substrate. The first substrate is detached from the second substrate.

Abstract: Methods of fabricating multicolor, stacked detector devices and focal plane arrays are disclosed. In one embodiment, a method of fabricating a stacked multicolor device includes forming a first detector by depositing a first detector structure on a first detector substrate, and depositing a first ground plane on the first detector structure, wherein the first ground plane is transmissive to radiation in a predetermined spectral band. The method further includes bonding an optical carrier wafer to the first ground plane, removing the first detector substrate, and forming a second detector. The second detector is formed by depositing a second detector structure on a second detector substrate, and depositing a second ground plane on the second detector structure. The method further includes depositing a dielectric layer on one of the first detector structure and the second ground plane, bonding the first detector to the second detector, and removing the second detector substrate.

Abstract: The system-on-chip camera comprises a semiconductor body (1) with an integrated circuit (40), a sensor substrate (2), sensor elements (3) arranged in the sensor substrate according to an array of pixels, a light sensor (4) in the sensor substrate apart from the sensor elements, and a lens or an array of lenses (15) on a surface of incidence (30). Filter elements (11, 12, 13), which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.

Abstract: Provided are a display panel and a manufacturing method thereof and a display device. The display panel includes a substrate and pixel units formed on the substrate, wherein, along a thickness direction of the display panel, at least one of the pixel units includes a driving and light filtering structure and a light emitting element formed at a side of the driving and light filtering structure facing away from the substrate, and wherein the driving and light filtering structure includes a driving part and a light filtering part, and the light filtering part is disposed in an accommodating hole penetrating through an insulating layer in the driving part along the thickness direction.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: Disclosed are an organic light emitting display device to improve optical efficiency and prevent deterioration in reliability of thin film transistors, and a method of manufacturing the same. The organic light emitting display device includes a mirror wall which is disposed on a substrate such that the mirror wall surrounds a light emitting area of each sub-pixel where a light emitting element is disposed, thus preventing total reflection of light produced in the light emitting element and improving optical efficiency by reflecting light travelling toward a non-emitting area to be directed to the light emitting area.