Color Filter Patents (Class 438/70)
  • Patent number: 10964586
    Abstract: A semiconductor structure includes a substrate having a first region and a second region defined thereon, a first isolation in the first region, a second isolation in the second region, and a region surrounding the first isolation in the substrate. The substrate includes a first material, and the region includes the first material and a second material. The first isolation has a first width, the second isolation has a second width, and the first width is greater than the second width. A bottom and sidewalls of the first isolation are in contact with the region, and a bottom and sidewalls of the second isolation are in contact with the substrate.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: March 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Shun Lo, Yu-Chi Chang, Felix Ying-Kit Tsui
  • Patent number: 10804308
    Abstract: An image sensing device including a noise blocking structure is disclosed. The image sensing device includes a semiconductor substrate structured to support a plurality of image pixels producing signals response to received incident light, a logic circuit configured to process the signals read out from the image pixels, and a noise blocking structure coupled to the logic circuit to reduce a noise generated by the logic circuit. The noise blocking structure formed to extend in a straight line without any bending portion in a first direction, and to pass through the semiconductor substrate in a second direction that is perpendicular to the first direction.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: October 13, 2020
    Assignee: SK hynix Inc.
    Inventors: Jong Eun Kim, Ho Young Kwak
  • Patent number: 10714519
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: July 14, 2020
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 10674601
    Abstract: A printed wiring board for camera module includes: first and second mounting regions for first and second image pickup devices respectively provided on one and the other sides in a front surface of the printed wiring board, the first and second mounting regions respectively provided with first and second conductive patterns configured to be electrically connected to the first and second image pickup devices, respectively, and a component mounting region provided between the first mounting region and the second mounting region, the component mounting region provided with a third conductive pattern, the third conductive pattern configured to be electrically connected to a signal processing component, amounting density of the third conductive pattern in the component mounting region being higher than that of the first conductive pattern in the first mounting region or a mounting density of the second conductive pattern in the second mounting region, in a plan view.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: June 2, 2020
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Yuichi Sugiyama, Masashi Miyazaki, Hiroyuki Kobayashi
  • Patent number: 10672823
    Abstract: An image sensor includes a semiconductor substrate including a pixel region and a pad region, a plurality of photoelectric conversion regions in the pixel region, an interconnect structure on a front surface of the semiconductor substrate, a pad structure in the pad region and on a rear surface of the semiconductor substrate, a through via structure in the pad region and electrically connected to the interconnect structure through the semiconductor substrate, and an isolation structure at least partially extending through the pad region of the semiconductor substrate from the rear surface of the semiconductor substrate. The isolation structure surrounds the pad structure and the through via structure in a plane extending parallel to the rear surface of the semiconductor substrate.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: June 2, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-hun Shin, Duk-seo Park
  • Patent number: 10644072
    Abstract: Provided is an image sensor including an organic photoelectric layer capable of enhancing color reproduction. An image sensor includes a semiconductor substrate including a plurality of pixel regions spaced apart from each other and an isolation region therebetween. Each of the plurality of pixel regions has a unit pixel. The image sensor also includes a device isolation layer in the isolation region and surrounding the unit pixel, a first transparent electrode layer, an organic photoelectric layer, and a second transparent electrode layer. The image sensor further includes a via plug electrically connected to the first transparent electrode layer, and arranged between the device isolation layers in the isolation region. The via plug passes through the isolation region. The first transparent electrode layer, the organic photoelectric layer and the second transparent electrode layer are sequentially arranged over the semiconductor substrate.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: May 5, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gwi-deok Ryan Lee, Kwang-min Lee, Tae-yon Lee, Masaru Ishii
  • Patent number: 10586810
    Abstract: A semiconductor on insulator type substrate, comprising at least: a support layer; a semiconductor surface layer; a buried dielectric layer located between the support layer and the semiconductor surface layer; a trap rich layer located between the buried dielectric layer and the support layer, and comprising at least one polycrystalline semiconductor material and/or a phase change material; in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: March 10, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yann Lamy, Lamine Benaissa, Etienne Navarro
  • Patent number: 10293518
    Abstract: There is provided a forming mold 40 made on the basis of a standard more reliable than an average roughness of a surface of a metal film that generates surface plasmon resonance, the forming mold being capable of improving an S/N ratio of an optical element 20. A forming mold 40 for a substrate 21 of an optical element 20 used for measurements utilizing surface plasmon, wherein an Spc value of a molding surface 51t for transferring a shape onto a surface 21a of the substrate 21 on a side facing an object to be measured is equal to or less than 100 [1/mm].
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: May 21, 2019
    Assignee: KONICA MINOLTA, INC.
    Inventors: Takehiko Goshima, Yoshihiro Okumura
  • Patent number: 10269850
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: April 23, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson H. Tai, Yi Ma
  • Patent number: 9893110
    Abstract: A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: February 13, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Takayuki Sumida, Masao Ishioka, Kei Aoki, Yasuhiro Kawabata, Naoki Inatani, Masaki Kurihara
  • Patent number: 9847253
    Abstract: A semiconductor package-on-package (PoP) device includes a first die incorporating a through-hole via (THV) disposed along a peripheral surface of the first die. The first die is disposed over a substrate or leadframe structure. A first semiconductor package is electrically connected to the THV of the first die, or electrically connected to the substrate or leadframe structure. An encapsulant is formed over a portion of the first die and the first semiconductor package.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: December 19, 2017
    Assignee: STATS ChipPAC Pte. Ltd.
    Inventors: Byung Tai Do, Heap Hoe Kuan, Seng Guan Chow
  • Patent number: 9711556
    Abstract: An image sensor structure includes a region of semiconductor material having a first major surface and a second major surface. A pixel structure is within the region of semiconductor material and includes a plurality of doped regions and a plurality of conductive structures. A metal-filled trench structure extends from the first major surface to the second major surface. A first contact structure is electrically connected to a first surface of the conductive trench structure, and a second contact structure electrically connected to a second surface of the conductive trench structure. In one embodiment, the second major surface is configured to receive incident light.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: July 18, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Rick Jerome, David T. Price, Sungkwon C. Hong, Gordon M. Grivna
  • Patent number: 9683894
    Abstract: A spectroscopic sensor has plural angle limiting filters that limit incident angles of incident lights, plural light band-pass filters that transmit specific wavelengths, and plural photodiodes to which corresponding transmitted lights are input. The spectroscopic sensor is a semiconductor device in which the angle limiting filters, the light band-pass filters, and the photodiodes are integrated, and, assuming that the surface on which impurity regions for the photodiodes are formed is a front surface of a semiconductor substrate, holes for receiving lights are formed in the impurity regions from the rear surface side.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: June 20, 2017
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Akira Uematsu, Noriyuki Nakamura, Akira Komatsu, Kunihiko Yano
  • Patent number: 9671334
    Abstract: An analyte-detection system has an optical waveguide with first and second cladding layers adjacent a core; a light source coupled to provide light to the waveguide; a photodetector such as a metal-semiconductor-metal, vertical PIN, or horizontal PIN photodetectors, the photodetector having an absorber configured to detect light escaping from the waveguide through the first cladding layer; multiple, separate, photocurrent collectors, where each photocurrent collector collects current from a separate portion of the photodetector absorber; and at least one current-sensing amplifier for receiving photocurrent. The photodetector absorber is an undivided absorber region for multiple photocurrent collectors. Either separate amplifiers are provided for each of the multiple photocurrent collection lines, or multiplexing logic couples selected photocurrent collectors to amplifiers, while coupling unselected photocurrent collectors to a bias generator.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: June 6, 2017
    Assignee: COLORADO STATE UNIVERSITY RESEARCH FOUNDATION
    Inventors: Kevin L. Lear, Timothy A. Erickson
  • Patent number: 9615041
    Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: April 4, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Sik Kim, Young-Chan Kim, Tae-Han Kim, Eun-Sub Shim, Dong-Joo Yang, Min-Seok Oh, Moo-Sup Lim
  • Patent number: 9577016
    Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: February 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
  • Patent number: 9570494
    Abstract: In one embodiment, a method for forming a backside illuminated image sensor includes providing a region of semiconductor material having a first major surface and a second major surface configured to receive incident light. A pixel structure is formed within the region of semiconductor material adjacent the first major surface. Thereafter, a trench structure comprising a metal material is formed extending through the region of semiconductor material. A first surface of the trench structure is adjacent the first major surface of the region of semiconductor material and a second surface adjoining the second major surface of the region of semiconductor material. A first contact structure is electrically connected to one surface of the conductive trench structure and a second contact structure is electrically connected to an opposing second surface.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: February 14, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Rick Jerome, David T. Price, Sungkwon C. Hong, Gordon M. Grivna
  • Patent number: 9543348
    Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: January 10, 2017
    Assignee: SILICONFILE TECHNOLOGIES INC.
    Inventors: Kyoung-Sik Park, Heui Gyun Ahn, Min-Suk Ko, Gab-Hwan Cho
  • Patent number: 9349771
    Abstract: A microlens forming method, comprising etching a first member and a second member arranged on the first member, the second member including a concavo-convex shape, and forming a microlens from the first member, wherein, the etching of the first and the second members is performed under a condition that an etching rate of the first member is higher than that of the second member, a portion of the first member under the concave portion is exposed during the etching of the second member, and the exposed portion of the first member is removed in the etching of the first member.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: May 24, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Mitsuhiro Yomori, Masaki Kurihara, Yasuhiro Sekine
  • Patent number: 9276024
    Abstract: According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 1, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Hirofumi Yamashita
  • Patent number: 9236268
    Abstract: In the manufacturing method of a semiconductor device according to the present embodiment, a resist is supplied on a base material. A template including a first template region having a device pattern and a second template region being adjacent to the device pattern and having supporting column patterns is pressed against the resist on the base material. The resist is cured, thereby transferring the device pattern to the resist on a first material region of the base material corresponding to the first template region and at the same time transferring the supporting column patterns to the resist on a second material region of the base material corresponding to the second template region to form supporting columns. The supporting columns are contacted with the first template region when the device pattern is transferred to a resist supplied to the second material region.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: January 12, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Taishi Ishikura, Atsunobu Isobayashi, Akihiro Kajita
  • Patent number: 9177983
    Abstract: An image sensor for three-dimensional (“3D”) imaging includes a first, a second, and a third pixel unit, where the second pixel unit is disposed between the first and third pixel units. Optical filters included in the pixel units are disposed on a light incident side of the image sensor to filter polarization-encoded light having a first polarization and a second polarization to photosensing regions of the pixel units. The first pixel unit includes a first optical filter having the first polarization, the second pixel unit includes a second optical filter having the second polarization, and the third pixel unit includes a third optical filter having the first polarization.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: November 3, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jiangtao Kuang, Donghui Wu, Tiejun Dai, Jizhang Shan
  • Patent number: 9153611
    Abstract: An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.
    Type: Grant
    Filed: August 11, 2011
    Date of Patent: October 6, 2015
    Assignee: Sony Corporation
    Inventors: Yoshihito Higashitsutsumi, Satoshi Shimizu, Isaya Kitamura, Masami Suzuki
  • Patent number: 9113103
    Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: August 18, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takashi Matsuda, Shin Kikuchi, Toru Koizumi
  • Patent number: 9082733
    Abstract: A display unit comprising an organic layer between a light-emitting section portion of a first electrode layer and a light-emitting section portion of a second electrode layer. Light is emissible from within the organic layer. An aperture-defining insulating film is between a contact section of the first electrode layer and a gap section portion of the second electrode layer. The thickness of the gap section portion of the second electrode layer is greater than the thickness of the light-emitting section portion of the second electrode layer.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: July 14, 2015
    Assignee: Sony Corporation
    Inventors: Seiichiro Jinta, Makoto Noda, Gaku Izumi, Kenichi Izumi, Manabu Kodate, Takahiro Seki, Michitoshi Tsuchiya
  • Patent number: 9048354
    Abstract: Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: June 2, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Seung-Hun Shin
  • Publication number: 20150145088
    Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.
    Type: Application
    Filed: November 26, 2014
    Publication date: May 28, 2015
    Inventors: Sungkwan Kim, Soo-Kyung Kim, Jung-kuk Park, Myung-Sun Kim, Jaesung Yun, Junetaeg Lee, Hakyu Choi
  • Publication number: 20150145084
    Abstract: An integrated circuit includes a substrate, a plurality of photo detectors formed in the substrate, and a diffraction grating having multiple sections disposed over the plurality of photo detectors. Each section of the diffraction grating has a respective periodic width for a respective target wavelength. The diffraction grating has at least two different target wavelengths. The diffraction grating is interlaced with filters. The filters in each section of the diffraction grating are configured to pass a respective electromagnetic wave with the respective target wavelength.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Inventor: Hsin-Chieh Chang
  • Publication number: 20150145083
    Abstract: An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 28, 2015
    Inventors: Chun-Hao Chou, Yin-Chieh Huang, Kuo-Cheng Lee, Chi-Cherng Jeng, Hsin-Chi Chen
  • Patent number: 9041869
    Abstract: A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern, the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality of lines connected to each other in a mesh-type arrangement, a color filter layer disposed on the base substrate, a plurality of contact holes defined in the color filter layer and exposing the first unit parts, and a bridge line between and connected to first unit parts adjacent to each other in the first direction, through the contact holes.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: May 26, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Duk-Sung Kim, Dong-Yoon Kim, Ju-Yong Park, Jae-Jin Pyun
  • Patent number: 9041133
    Abstract: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: May 26, 2015
    Assignee: NAN CHANG O-FILM OPTOELECTRONICS TECHNOLOGY LTD
    Inventors: Vage Oganesian, Belgacem Haba, Ilyas Mohammed, Piyush Savalia, Craig Mitchell
  • Publication number: 20150137297
    Abstract: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: Aptina Imaging Corporation
    Inventors: Ulrich Boettiger, Swarnal Borthakur, Andrew Perkins
  • Publication number: 20150137296
    Abstract: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a micro-lens structure above a top surface of the color filters.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Szu-Ying Chen, Dun-Nian Yaung, Chen-Jong Wang, Tzu-Hsuan Hsu
  • Patent number: 9034682
    Abstract: A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: May 19, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Sub Shim, Jung-Chak Ahn, Bum-Suk Kim, Kyung-Ho Lee
  • Publication number: 20150130007
    Abstract: A semiconductor device is improved in performance by preventing the generation of color mixing in its pixels which form an image pickup device. In a region between adjacent pixels, which is a region for separating regions where respective color filters of the pixels from each other, septum walls are formed. The septum walls are each made of an insulator film smaller in refractive index than the color filters, and an insulator film which is formed to cover side walls of the insulator film and is larger in refractive index than the color filters. In this way, a light ray radiated into the upper surface of each of the septum walls can be prevented from invading the pixels adjacent to the wall.
    Type: Application
    Filed: November 8, 2014
    Publication date: May 14, 2015
    Inventor: Takeshi KAWAMURA
  • Publication number: 20150130010
    Abstract: A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines.
    Type: Application
    Filed: November 11, 2013
    Publication date: May 14, 2015
    Applicant: OmniVision Technologies
    Inventors: Jin Li, Gang Chen, Yin Qian, Dyson H. Tai
  • Publication number: 20150130002
    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.
    Type: Application
    Filed: November 14, 2013
    Publication date: May 14, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG, Chun-Hao CHOU, Yin-Chieh HUANG, Wan-Chen HUANG
  • Publication number: 20150130001
    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.
    Type: Application
    Filed: November 14, 2013
    Publication date: May 14, 2015
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Yin-Chieh HUANG, Wan-Chen Huang, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG
  • Publication number: 20150130005
    Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.
    Type: Application
    Filed: August 21, 2014
    Publication date: May 14, 2015
    Inventors: JeongWook KO, Hongki KIM, Younghoon PARK, Wonje PARK, Yu Jin AHN, Junetaeg LEE
  • Publication number: 20150130008
    Abstract: Provided is a near-infrared absorptive compositions capable of reducing unevenness in the coated surface profile and variation in near-infrared absorptive ability when the near-infrared absorptive compositions are formed into films. The near-infrared absorptive composition comprises a copper complex and a solvent, wherein the near-infrared absorptive composition has a solid content of 10 to 90% by mass and the solvent has a boiling point of 90 to 200° C.
    Type: Application
    Filed: January 23, 2015
    Publication date: May 14, 2015
    Applicant: FUJIFILM Corporation
    Inventors: Naotsugu MURO, Hideki TAKAKUWA, Seongmu BAK
  • Publication number: 20150130003
    Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.
    Type: Application
    Filed: May 30, 2014
    Publication date: May 14, 2015
    Applicant: SK hynix Inc.
    Inventors: Do-Hwan KIM, Dong-Hyun WOO, Jong-Chae KIM, Chung-Seok CHOI
  • Patent number: 9029968
    Abstract: An optical sensor element is mounted in a package which includes a glass substrate having a cavity, and a glass lid substrate bonded to the other substrate to close the cavity. The glass substrate with the cavity has metalized wiring patterns on front and rear surfaces thereof, and a through hole filled with metal to form a through-electrode interconnecting the wiring patterns on the front and rear surfaces. A metalized wiring pattern on the rear surface of the glass lid substrate is electrically connected to the wiring pattern on the front surface of the other substrate with an adhesive containing conductive particles. The glass lid substrate is made either of glass having a filter function or glass having a light shielding property with an opening therethrough filled with glass having a filter function.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: May 12, 2015
    Assignee: Seiko Instruments Inc.
    Inventors: Koji Tsukagoshi, Hitoshi Kamamori, Sadao Oku, Hiroyuki Fujita, Keiichiro Hayashi
  • Publication number: 20150123226
    Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.
    Type: Application
    Filed: December 15, 2013
    Publication date: May 7, 2015
    Inventors: Chung-Seok CHOI, Jong-Chae KIM, Do-Hwan KIM
  • Publication number: 20150115388
    Abstract: A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact. An isolation region is between each adjacent pair of photoelectric transducers. The isolation region includes an insulating material extending from a surface of the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material. The third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.
    Type: Application
    Filed: October 24, 2014
    Publication date: April 30, 2015
    Inventors: Kentaro EDA, Kenichi YOSHINO, Shintaro OKUJO, Hiroyuki FUKUMIZU, Takaaki MINAMI, Takeshi YOUSYOU, Hiroaki ASHIDATE
  • Publication number: 20150115382
    Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.
    Type: Application
    Filed: October 31, 2013
    Publication date: April 30, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
  • Publication number: 20150111334
    Abstract: A method of making a backside illuminated image sensor includes forming a first isolation structure in a pixel region of a substrate, where a bottom of the first isolation structure is exposed at a back surface of the substrate. The method further includes forming a second isolation structure in a peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. Additionally, the method includes forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, where the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, and where the second isolation structure is free of the implant region.
    Type: Application
    Filed: December 31, 2014
    Publication date: April 23, 2015
    Inventors: Kuan-Chieh HUANG, Chih-Jen WU, Chen-Ming HUANG, Dun-Nian YAUNG, An-Chun TU
  • Patent number: 9012925
    Abstract: A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: April 21, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Kamimura, Shinji Uya, Tomoyasu Kudo
  • Patent number: 8993411
    Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.
    Type: Grant
    Filed: February 23, 2013
    Date of Patent: March 31, 2015
    Assignee: Siliconfile Technologies Inc.
    Inventors: Heui-Gyun Ahn, Se-Jung Oh, In-Gyun Jeon, Jun-Ho Won
  • Publication number: 20150085168
    Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
    Type: Application
    Filed: December 8, 2014
    Publication date: March 26, 2015
    Inventors: Kazufumi Watanabe, Yasushi Maruyama
  • Publication number: 20150087104
    Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.
    Type: Application
    Filed: September 26, 2013
    Publication date: March 26, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Chung-Chuan TSENG, Chia-Wei LIU, Li-Hsin CHU, Yu-Hsiang TSAI