Color Filter Patents (Class 438/70)
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Patent number: 9671334Abstract: An analyte-detection system has an optical waveguide with first and second cladding layers adjacent a core; a light source coupled to provide light to the waveguide; a photodetector such as a metal-semiconductor-metal, vertical PIN, or horizontal PIN photodetectors, the photodetector having an absorber configured to detect light escaping from the waveguide through the first cladding layer; multiple, separate, photocurrent collectors, where each photocurrent collector collects current from a separate portion of the photodetector absorber; and at least one current-sensing amplifier for receiving photocurrent. The photodetector absorber is an undivided absorber region for multiple photocurrent collectors. Either separate amplifiers are provided for each of the multiple photocurrent collection lines, or multiplexing logic couples selected photocurrent collectors to amplifiers, while coupling unselected photocurrent collectors to a bias generator.Type: GrantFiled: October 25, 2013Date of Patent: June 6, 2017Assignee: COLORADO STATE UNIVERSITY RESEARCH FOUNDATIONInventors: Kevin L. Lear, Timothy A. Erickson
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Patent number: 9615041Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.Type: GrantFiled: January 28, 2015Date of Patent: April 4, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Sik Kim, Young-Chan Kim, Tae-Han Kim, Eun-Sub Shim, Dong-Joo Yang, Min-Seok Oh, Moo-Sup Lim
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Patent number: 9577016Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: June 4, 2015Date of Patent: February 21, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 9570494Abstract: In one embodiment, a method for forming a backside illuminated image sensor includes providing a region of semiconductor material having a first major surface and a second major surface configured to receive incident light. A pixel structure is formed within the region of semiconductor material adjacent the first major surface. Thereafter, a trench structure comprising a metal material is formed extending through the region of semiconductor material. A first surface of the trench structure is adjacent the first major surface of the region of semiconductor material and a second surface adjoining the second major surface of the region of semiconductor material. A first contact structure is electrically connected to one surface of the conductive trench structure and a second contact structure is electrically connected to an opposing second surface.Type: GrantFiled: September 29, 2015Date of Patent: February 14, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rick Jerome, David T. Price, Sungkwon C. Hong, Gordon M. Grivna
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Patent number: 9543348Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.Type: GrantFiled: August 12, 2014Date of Patent: January 10, 2017Assignee: SILICONFILE TECHNOLOGIES INC.Inventors: Kyoung-Sik Park, Heui Gyun Ahn, Min-Suk Ko, Gab-Hwan Cho
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Patent number: 9349771Abstract: A microlens forming method, comprising etching a first member and a second member arranged on the first member, the second member including a concavo-convex shape, and forming a microlens from the first member, wherein, the etching of the first and the second members is performed under a condition that an etching rate of the first member is higher than that of the second member, a portion of the first member under the concave portion is exposed during the etching of the second member, and the exposed portion of the first member is removed in the etching of the first member.Type: GrantFiled: January 7, 2015Date of Patent: May 24, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Mitsuhiro Yomori, Masaki Kurihara, Yasuhiro Sekine
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Patent number: 9276024Abstract: According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.Type: GrantFiled: March 13, 2013Date of Patent: March 1, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventor: Hirofumi Yamashita
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Patent number: 9236268Abstract: In the manufacturing method of a semiconductor device according to the present embodiment, a resist is supplied on a base material. A template including a first template region having a device pattern and a second template region being adjacent to the device pattern and having supporting column patterns is pressed against the resist on the base material. The resist is cured, thereby transferring the device pattern to the resist on a first material region of the base material corresponding to the first template region and at the same time transferring the supporting column patterns to the resist on a second material region of the base material corresponding to the second template region to form supporting columns. The supporting columns are contacted with the first template region when the device pattern is transferred to a resist supplied to the second material region.Type: GrantFiled: February 4, 2014Date of Patent: January 12, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Taishi Ishikura, Atsunobu Isobayashi, Akihiro Kajita
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Patent number: 9177983Abstract: An image sensor for three-dimensional (“3D”) imaging includes a first, a second, and a third pixel unit, where the second pixel unit is disposed between the first and third pixel units. Optical filters included in the pixel units are disposed on a light incident side of the image sensor to filter polarization-encoded light having a first polarization and a second polarization to photosensing regions of the pixel units. The first pixel unit includes a first optical filter having the first polarization, the second pixel unit includes a second optical filter having the second polarization, and the third pixel unit includes a third optical filter having the first polarization.Type: GrantFiled: January 23, 2012Date of Patent: November 3, 2015Assignee: OmniVision Technologies, Inc.Inventors: Jiangtao Kuang, Donghui Wu, Tiejun Dai, Jizhang Shan
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Patent number: 9153611Abstract: An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.Type: GrantFiled: August 11, 2011Date of Patent: October 6, 2015Assignee: Sony CorporationInventors: Yoshihito Higashitsutsumi, Satoshi Shimizu, Isaya Kitamura, Masami Suzuki
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Patent number: 9113103Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.Type: GrantFiled: December 11, 2014Date of Patent: August 18, 2015Assignee: Canon Kabushiki KaishaInventors: Takashi Matsuda, Shin Kikuchi, Toru Koizumi
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Patent number: 9082733Abstract: A display unit comprising an organic layer between a light-emitting section portion of a first electrode layer and a light-emitting section portion of a second electrode layer. Light is emissible from within the organic layer. An aperture-defining insulating film is between a contact section of the first electrode layer and a gap section portion of the second electrode layer. The thickness of the gap section portion of the second electrode layer is greater than the thickness of the light-emitting section portion of the second electrode layer.Type: GrantFiled: October 31, 2014Date of Patent: July 14, 2015Assignee: Sony CorporationInventors: Seiichiro Jinta, Makoto Noda, Gaku Izumi, Kenichi Izumi, Manabu Kodate, Takahiro Seki, Michitoshi Tsuchiya
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Patent number: 9048354Abstract: Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.Type: GrantFiled: March 14, 2013Date of Patent: June 2, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Byung-Jun Park, Seung-Hun Shin
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Publication number: 20150145084Abstract: An integrated circuit includes a substrate, a plurality of photo detectors formed in the substrate, and a diffraction grating having multiple sections disposed over the plurality of photo detectors. Each section of the diffraction grating has a respective periodic width for a respective target wavelength. The diffraction grating has at least two different target wavelengths. The diffraction grating is interlaced with filters. The filters in each section of the diffraction grating are configured to pass a respective electromagnetic wave with the respective target wavelength.Type: ApplicationFiled: November 27, 2013Publication date: May 28, 2015Inventor: Hsin-Chieh Chang
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Publication number: 20150145088Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.Type: ApplicationFiled: November 26, 2014Publication date: May 28, 2015Inventors: Sungkwan Kim, Soo-Kyung Kim, Jung-kuk Park, Myung-Sun Kim, Jaesung Yun, Junetaeg Lee, Hakyu Choi
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Publication number: 20150145083Abstract: An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.Type: ApplicationFiled: November 25, 2013Publication date: May 28, 2015Inventors: Chun-Hao Chou, Yin-Chieh Huang, Kuo-Cheng Lee, Chi-Cherng Jeng, Hsin-Chi Chen
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Patent number: 9041869Abstract: A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern, the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality of lines connected to each other in a mesh-type arrangement, a color filter layer disposed on the base substrate, a plurality of contact holes defined in the color filter layer and exposing the first unit parts, and a bridge line between and connected to first unit parts adjacent to each other in the first direction, through the contact holes.Type: GrantFiled: April 25, 2013Date of Patent: May 26, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Duk-Sung Kim, Dong-Yoon Kim, Ju-Yong Park, Jae-Jin Pyun
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Patent number: 9041133Abstract: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.Type: GrantFiled: May 19, 2011Date of Patent: May 26, 2015Assignee: NAN CHANG O-FILM OPTOELECTRONICS TECHNOLOGY LTDInventors: Vage Oganesian, Belgacem Haba, Ilyas Mohammed, Piyush Savalia, Craig Mitchell
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Publication number: 20150137296Abstract: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a micro-lens structure above a top surface of the color filters.Type: ApplicationFiled: November 20, 2013Publication date: May 21, 2015Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Szu-Ying Chen, Dun-Nian Yaung, Chen-Jong Wang, Tzu-Hsuan Hsu
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Publication number: 20150137297Abstract: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.Type: ApplicationFiled: November 21, 2013Publication date: May 21, 2015Applicant: Aptina Imaging CorporationInventors: Ulrich Boettiger, Swarnal Borthakur, Andrew Perkins
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Patent number: 9034682Abstract: A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.Type: GrantFiled: July 6, 2011Date of Patent: May 19, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eun-Sub Shim, Jung-Chak Ahn, Bum-Suk Kim, Kyung-Ho Lee
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Publication number: 20150130002Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.Type: ApplicationFiled: November 14, 2013Publication date: May 14, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yun-Wei CHENG, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG, Chun-Hao CHOU, Yin-Chieh HUANG, Wan-Chen HUANG
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Publication number: 20150130001Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.Type: ApplicationFiled: November 14, 2013Publication date: May 14, 2015Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Yin-Chieh HUANG, Wan-Chen Huang, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG
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Publication number: 20150130003Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.Type: ApplicationFiled: May 30, 2014Publication date: May 14, 2015Applicant: SK hynix Inc.Inventors: Do-Hwan KIM, Dong-Hyun WOO, Jong-Chae KIM, Chung-Seok CHOI
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Publication number: 20150130008Abstract: Provided is a near-infrared absorptive compositions capable of reducing unevenness in the coated surface profile and variation in near-infrared absorptive ability when the near-infrared absorptive compositions are formed into films. The near-infrared absorptive composition comprises a copper complex and a solvent, wherein the near-infrared absorptive composition has a solid content of 10 to 90% by mass and the solvent has a boiling point of 90 to 200° C.Type: ApplicationFiled: January 23, 2015Publication date: May 14, 2015Applicant: FUJIFILM CorporationInventors: Naotsugu MURO, Hideki TAKAKUWA, Seongmu BAK
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Publication number: 20150130007Abstract: A semiconductor device is improved in performance by preventing the generation of color mixing in its pixels which form an image pickup device. In a region between adjacent pixels, which is a region for separating regions where respective color filters of the pixels from each other, septum walls are formed. The septum walls are each made of an insulator film smaller in refractive index than the color filters, and an insulator film which is formed to cover side walls of the insulator film and is larger in refractive index than the color filters. In this way, a light ray radiated into the upper surface of each of the septum walls can be prevented from invading the pixels adjacent to the wall.Type: ApplicationFiled: November 8, 2014Publication date: May 14, 2015Inventor: Takeshi KAWAMURA
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Publication number: 20150130010Abstract: A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines.Type: ApplicationFiled: November 11, 2013Publication date: May 14, 2015Applicant: OmniVision TechnologiesInventors: Jin Li, Gang Chen, Yin Qian, Dyson H. Tai
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Publication number: 20150130005Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.Type: ApplicationFiled: August 21, 2014Publication date: May 14, 2015Inventors: JeongWook KO, Hongki KIM, Younghoon PARK, Wonje PARK, Yu Jin AHN, Junetaeg LEE
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Patent number: 9029968Abstract: An optical sensor element is mounted in a package which includes a glass substrate having a cavity, and a glass lid substrate bonded to the other substrate to close the cavity. The glass substrate with the cavity has metalized wiring patterns on front and rear surfaces thereof, and a through hole filled with metal to form a through-electrode interconnecting the wiring patterns on the front and rear surfaces. A metalized wiring pattern on the rear surface of the glass lid substrate is electrically connected to the wiring pattern on the front surface of the other substrate with an adhesive containing conductive particles. The glass lid substrate is made either of glass having a filter function or glass having a light shielding property with an opening therethrough filled with glass having a filter function.Type: GrantFiled: November 14, 2012Date of Patent: May 12, 2015Assignee: Seiko Instruments Inc.Inventors: Koji Tsukagoshi, Hitoshi Kamamori, Sadao Oku, Hiroyuki Fujita, Keiichiro Hayashi
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Publication number: 20150123226Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.Type: ApplicationFiled: December 15, 2013Publication date: May 7, 2015Inventors: Chung-Seok CHOI, Jong-Chae KIM, Do-Hwan KIM
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Publication number: 20150115382Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.Type: ApplicationFiled: October 31, 2013Publication date: April 30, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei Chuang Wu, Jhy-Jyi Sze, Yu-Jen Wang, Yen-Chang Chu, Shyh-Fann Ting, Ching-Chun Wang
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Publication number: 20150115388Abstract: A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact. An isolation region is between each adjacent pair of photoelectric transducers. The isolation region includes an insulating material extending from a surface of the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material. The third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.Type: ApplicationFiled: October 24, 2014Publication date: April 30, 2015Inventors: Kentaro EDA, Kenichi YOSHINO, Shintaro OKUJO, Hiroyuki FUKUMIZU, Takaaki MINAMI, Takeshi YOUSYOU, Hiroaki ASHIDATE
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Publication number: 20150111334Abstract: A method of making a backside illuminated image sensor includes forming a first isolation structure in a pixel region of a substrate, where a bottom of the first isolation structure is exposed at a back surface of the substrate. The method further includes forming a second isolation structure in a peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. Additionally, the method includes forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, where the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, and where the second isolation structure is free of the implant region.Type: ApplicationFiled: December 31, 2014Publication date: April 23, 2015Inventors: Kuan-Chieh HUANG, Chih-Jen WU, Chen-Ming HUANG, Dun-Nian YAUNG, An-Chun TU
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Patent number: 9012925Abstract: A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.Type: GrantFiled: March 6, 2013Date of Patent: April 21, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Masaki Kamimura, Shinji Uya, Tomoyasu Kudo
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Patent number: 8993411Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.Type: GrantFiled: February 23, 2013Date of Patent: March 31, 2015Assignee: Siliconfile Technologies Inc.Inventors: Heui-Gyun Ahn, Se-Jung Oh, In-Gyun Jeon, Jun-Ho Won
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Publication number: 20150084144Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.Type: ApplicationFiled: September 18, 2014Publication date: March 26, 2015Inventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
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Publication number: 20150087104Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.Type: ApplicationFiled: September 26, 2013Publication date: March 26, 2015Applicant: Taiwan Semiconductor Manufacturing Co., LtdInventors: Chung-Chuan TSENG, Chia-Wei LIU, Li-Hsin CHU, Yu-Hsiang TSAI
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Publication number: 20150085168Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.Type: ApplicationFiled: December 8, 2014Publication date: March 26, 2015Inventors: Kazufumi Watanabe, Yasushi Maruyama
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Patent number: 8987113Abstract: A device includes an image sensing element. The device also includes a Silicon Dioxide (SiO2) layer, located over the image sensing element, exhibiting a first index of refraction. The device further includes a first lens, located over the SiO2 layer, exhibiting a second index of refraction greater than the first index of refraction. The device still further includes a color filter located over the first lens and a second lens located over the color filter.Type: GrantFiled: November 22, 2013Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Hsuan Hsu, Dun-Nian Yaung, Yean-Kuen Fang
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Publication number: 20150076639Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.Type: ApplicationFiled: September 18, 2013Publication date: March 19, 2015Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Gang Chen, Jin Li, Duli Mao, Dyson H. Tai
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Publication number: 20150076573Abstract: An integrated circuit includes a substrate and an interconnect part above the substrate, and further includes a photosensitive region in the substrate. A filter is provided aligned with the photosensitive region. The filter is formed by at least one layer of filter material. In one implementation for front side illumination, the layer of filter material is positioned above the photosensitive region between the interconnect part and the substrate. In another implementation for back side illumination, the layer of filter material is positioned below the photosensitive region opposite the interconnect part. The layer of filter material is configured such that a product of the thickness of the layer of filter material and the imaginary part of the refractive index of the layer of filter material is above 1 nm.Type: ApplicationFiled: September 18, 2014Publication date: March 19, 2015Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Michel Marty, Sebastien Jouan, Laurent Frey
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Publication number: 20150076637Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: ApplicationFiled: September 13, 2013Publication date: March 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, YUICHIRO YAMASHITA, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 8981516Abstract: A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.Type: GrantFiled: April 12, 2012Date of Patent: March 17, 2015Assignees: STMicroeletronics S.A., STMicroelectronics (Crolles 2) SASInventors: Jens Prima, François Roy, Michel Marty
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Patent number: 8980671Abstract: A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.Type: GrantFiled: February 8, 2012Date of Patent: March 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Hongo, Kazumasa Tanida, Akihiro Hori, Kenji Takahashi, Hideo Numata
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Patent number: 8981512Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.Type: GrantFiled: September 18, 2013Date of Patent: March 17, 2015Assignee: OmniVision Technologies, Inc.Inventors: Gang Chen, Jin Li, Duli Mao, Dyson H. Tai
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Publication number: 20150069476Abstract: Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.Type: ApplicationFiled: September 9, 2014Publication date: March 12, 2015Inventors: Sherry Mings, Patricia M. Liu, Steven C.H. Hung
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Publication number: 20150070532Abstract: According to one embodiment, a solid state imaging device includes an imaging substrate unit, a lens unit, and a color filter unit. The imaging substrate unit has a major surface including first region and second regions including pixels. The lens unit is separated from the major surface in a first direction perpendicular to the major surface. The lens unit includes a first lens overlapping the pixels of the first region when projected onto the major surface and a second lens overlapping the pixels of the second region when projected onto the major surface. The color filter unit is provided between the imaging substrate unit and the lens unit and is separated from the imaging substrate unit. The color filter unit includes a first color filter provided between the first region and the first lens, and a second color filter provided between the second region and the second lens.Type: ApplicationFiled: September 9, 2014Publication date: March 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Lisa MASUDA, Naotada Okada, Kazuhiro Suzuki, Risako Ueno, Mitsuyoshi Kobayashi, Hideyuki Funaki
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Publication number: 20150061061Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: ApplicationFiled: August 30, 2013Publication date: March 5, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 8969988Abstract: There is provided a solid-state imaging device including a semiconductor substrate, pixels each including a photoelectric conversion unit formed in the semiconductor substrate, a trench that is formed in the semiconductor substrate and separates the pixels that are adjacent, and a color filter that is formed above the photoelectric conversion unit of each of the pixels and buried in at least a part of the trench.Type: GrantFiled: July 3, 2013Date of Patent: March 3, 2015Assignee: Sony CorporationInventors: Harumi Ikeda, Yasushi Tateshita
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Patent number: 8969997Abstract: A method of forming of a semiconductor structure has isolation structures. A substrate having a first region and a second region is provided. The first region and the second region are implanted with neutral dopants to form a first etching stop feature and a second stop feature in the first region and the second region, respectively. The first etching stop feature has a depth D1 and the second etching stop feature has a depth D2. D1 is less than D2. The substrate in the first region and the second region are etched to form a first trench and a second trench respectively. The first trench and the second trench land on the first etching stop feature and the second etching stop feature, respectively.Type: GrantFiled: November 14, 2012Date of Patent: March 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Chang-Sheng Tsao