Abstract: Embodiment methods and structures include a resonant plasmonic nanostructure located within a thin-film solar cell. This plasmonic nanostructure may trap light and thereby improve the efficiency and light absorption of the cell without increasing physical thickness. In various embodiments, the plasmonic nanostructure may be located within a p-type semiconductor layer of the solar cell. In further embodiments, the index of refraction may vary within the p-type semiconductor layer.

Abstract: An RTP heating system and an RTP heating method, which can heat a photovoltaic-device intermediate product having a glass substrate, a Mo layer, and a light absorption layer in formation. The RTP heating system is composed of a chamber; a support member located in the chamber; a heating element mounted in the chamber for emitting infrared rays for heating; and a plurality of temperature sensors and a temperature control device for sensing and controlling thermal sources from the heating element and the support member. The infrared rays can be mostly reflected off the Mo layer to apply less direct heating to the glass substrate. Accordingly, the upper and lower surfaces of the photovoltaic-device intermediate product can be heated under different temperatures separately to prevent the glass substrate below the photovoltaic-device intermediate product from softening and deformation and to allow production of the light absorption layer on the Mo layer.

Abstract: Photovoltaic conductive features and processes for forming photovoltaic conductive features are described. The process comprises (a) providing a substrate comprising a passivation layer disposed on a silicon layer; (b) depositing a surface modifying material onto at least a portion of the passivation layer; (c) depositing a composition comprising at least one of metallic nanoparticles comprising a metal or a metal precursor to the metal onto at least a portion of the substrate; and (d) heating the composition such that it forms at least a portion of a photovoltaic conductive feature in electrical contact with the silicon layer, wherein at least one of the composition or the surface modifying material etches a region of the passivation layer. When the surface modifying material is a UV-curable material, the process comprises the additional step of curing the UV-curable material.

Abstract: Provided are a paste for preparing etching mask patterns and a manufacturing method of a silicon solar cell using the same. The paste composition for preparing mask patterns is used to form a selective emitter of a silicon solar cell, and includes inorganic powder, an organic solvent, a binder resin, and a plasticizer. The mask patterns prepared from the paste composition have good adhesion with a substrate, thereby preventing edge curling, and have good etching resistant characteristic in an etch-back process for forming a selective emitter, enabling formation of a stable emitter.

Abstract: The present invention provides a method for manufacturing a solar cell capable of suppressing volatilization of selenium and deformation of a substrate during a manufacturing process. According to the present invention, the method for manufacturing the solar cell comprises the steps of: providing a substrate; forming a rear electrode on the substrate; forming a precursor film for a light absorption film on the rear electrode; forming a light absorption film by progressing a crystallization process for the precursor film for the light absorption film; forming a buffer film on the light absorption film; forming a window film on the buffer film, and forming an anti-reflection film on the window film; and partially patterning the anti-reflection film, and forming a grid electrode in a patterned area. Said precursor film for the light absorption film includes Cu—Zn—Sn—S (Cu2ZnSnS4), CuInSe2, CuInS2, Cu(InGa)Se2, or Cu(InGa)S2.

Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.

Abstract: A solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer.

Abstract: A method of manufacturing a thin film solar cell includes steps of preparing a substrate on which unit cells are defined, forming transparent conducive layers on the substrate and corresponding to the unit cells, respectively, the transparent conductive layers spaced apart from each other with a first separation line therebetween, forming light-absorbing layers on the transparent conductive layers and corresponding to the unit cells, respectively, the light-absorbing layers spaced apart from each other with a second separation line therebetween, forming a third separation line in each of the light-absorbing layers, the third separation line spaced apart from the second separation line, forming a reflection material layer by disposing a silk screen over the third separation line and applying a conductive paste, and forming reflection electrodes corresponding to the unit cells, respectively, by sintering the reflection material layer.

Abstract: A device includes an input waveguide on a base. The input waveguide guides a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The device also includes a sensor waveguide on the base. The sensor waveguide includes a light-absorbing medium that receives the light signal from the input waveguide. The light-absorbing medium has one or more continuous doped regions that are each positioned such that an application of electrical energy to the doped regions forms an electrical field in the light-absorbing medium. One or more of the doped regions has a first portion that is located within the light-absorbing medium and a second portion located outside of the light-absorbing medium. The device also includes an electrical conductor for applying the electrical energy to one of the doped regions. The electrical conductor contacts the portion of the doped regions that is located outside of the light-absorbing medium.

Abstract: A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed.

Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.

Abstract: A solid-state image capture device includes: at least one photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; at least one on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate. The antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin.

Abstract: An advanced, very high transmittance, back-illuminated, silicon-on-sapphire wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or silicon-germanium avalanche photodiode detector arrays. The wafer substrate incorporates a stacked antireflective bilayer between the sapphire and silicon layers, comprised of single crystal aluminum nitride (AlN) and non-stoichiometric, silicon rich, amorphous silicon nitride (a-SiNX<1.33), that provides optimal refractive index matching between sapphire and silicon. A one quarter wavelength, magnesium fluoride (?/4-MgF2) antireflective layer deposited on the back surface of the thinned sapphire provides refractive index matching at the air-sapphire interface. Selecting a composition of x=0.62 for a-SiNX, tunes an optimal refractive index for the layer. Selecting design thicknesses of 52 nm for single crystal AlN, 30 nm for a-SiN0.

Abstract: An object of the present invention is to provide an enlarged dye sensitized solar cell which has a short-circuit preventing structure while a distance between a transparent conductive oxide and a counter electrode, that is, a cell gap is shortened. The dye sensitized solar cell includes a transparent conductive oxide which includes a transparent substrate and a conductive metal oxide having a light transmission property; a metal grid which is formed on the transparent conductive oxide; a protective film with which the metal grid is coated; a dye-adsorbed semiconductor thin film which is formed on the transparent conductive oxide in which the metal grid is not formed; and a counter electrode substrate, wherein a short-circuit preventing layer is provided in the counter electrode substrate facing the metal grid, and a width formed by a short side of the short-circuit preventing layer is larger than a width formed by the metal grid and protective layer.

Abstract: An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens.

Abstract: Self-reducing metal inks and systems and methods for producing and using the same are disclosed. In an exemplary embodiment, a method may comprise selecting a metal-organic (MO) precursor, selecting a reducing agent, and dissolving the MO precursor and the reducing agent in an organic solvent to produce a metal ink that remains in a liquid phase at room temperature. Metal inks, including self-reducing and fire-through metal inks, are also disclosed, as are various applications of the metal inks.

Abstract: A method for manufacturing a solar ceil from a silicon semiconductor substrate of a first conductivity type, the substrate having a front and a rear surface; and creating on the rear surface a doped layer of the first conductivity type, as rear surface doped layer as back surface field in the solar cell; creating on the front surface a doped, layer of a second conductivity type as front surface doped layer as an emitter layer in the solar cell, the second conductivity type being opposite to the first conductivity type; wherein the method further includes: creating recesses in the rear surface to pattern the rear surface doped layer of the first conductivity type so as to create back surface field areas, the recesses being void of rear surface doped layer material, and creating via holes in the substrate, each via hole being positioned within an associated recess.

Abstract: An organic solar cell (20) and a method for manufacturing the same are provided. The organic solar cell (20) includes a light reflective electrode (11), a photosensitive layer (23) arranged over the light reflective electrode (11), a transparent electrode (16) arranged over the photosensitive layer (23), an up-conversion structure (18) arranged over the transparent electrode (16), and a transparent insulation layer (17) arranged between the transparent electrode (16) and the up-conversion structure (18), wherein the up-conversion structure (18) includes up-conversion materials which have the up-conversion capability for spectrum, and the photosensitive layer (23) includes a mixed heterojunction structure which is formed by mixing at least electron donor materials and electron acceptor materials. High photoelectric conversion performance and enhanced electric properties of the organic solar cell can be obtained.

Abstract: A solar cell according to an embodiment of the invention includes a substrate configured to have a plurality of via holes and a first conductive type, an emitter layer placed in the substrate and configured to have a second conductive type opposite to the first conductive type, a plurality of first electrodes electrically coupled to the emitter layer, a plurality of current collectors electrically coupled to the first electrodes through the plurality of via holes, and a plurality of second electrodes electrically coupled to the substrate. The plurality of via holes includes at least two via holes having different angles.

Abstract: A anti-reflection film includes a light phase delay film which changes a phase of incident light, a polarizing film on the light phase delay film and transmitting light with a polarization component in a particular direction, and a protective film on the polarizing film and protecting the polarizing film. All of the polarizing film, the light phase delay film, and the protective film include flexible materials.

Abstract: A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.

Abstract: An image pickup device includes a plurality of photodiodes, a photoelectric conversion part, and structures. The photoelectric conversion part is configured to convert light incident on the plurality of photodiodes into an electric signal. The structures each have a plano-convex shape and are formed to cover the plurality of photodiodes, the structures each having a concave part at a center of the plano-convex shape, and regions other than the concave part on each surface of the structures, the regions being covered by a light reflecting material.

Abstract: A method for manufacturing a solar cell includes forming an impurity doped region of a second conductive type at a substrate of a first conductive type, sequentially irradiating laser shots onto the impurity doped region of the substrate to form an emitter part including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, and forming a plurality of first electrodes connected to the second emitter region and forming a second electrode connected to the substrate.

Abstract: A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, the emitter region forming a p-n junction along with the substrate, a passivation layer which is positioned on a back surface of the substrate and has a plurality of via holes exposing portions of the back surface of the substrate, a first electrode connected to the emitter region, and a second electrode which is positioned on a back surface of the passivation layer and is connected to the substrate through the plurality of via holes.

Abstract: A solar cell includes a substrate having a first conductive type; an emitter layer formed on a front side of the substrate and having a second conductive type opposite to the first conductive type; a reflection preventing film on the emitter layer; and a plurality of finger lines that penetrate the reflection preventing film and are connected to the emitter layer. The emitter layer includes a plurality of first regions adjoining the plurality of front finger lines and a plurality of second regions disposed between the plurality of first regions, and the plurality of second regions have a thickness thicker than a thickness of the plurality of first regions. By doing so, a photovoltaic efficiency of the solar cell is improved.

Abstract: Disclosed are a system, a method and/or an apparatus of a photovoltaic device having an integrated micro-mirror and of formation. In one embodiment, a photovoltaic structure includes a photovoltaic cell, an oxide layer formed above the photovoltaic cell, and an integrated micro-mirror formed above the oxide layer. The integrated micro-mirror may be fabricated as a flat plate reflection form in which the light energy is deflected to the underlying photovoltaic cell. Alternatively, the integrated micro-mirror may be fabricated in a concentrator form facing a solar source to concentrate a light energy of the solar source into a target region of the integrated photovoltaic cell. An array of the integrated micro-mirrors may be physically bonded to the integrated photovoltaic cell. A shape and geometry of the array of the integrated micro-mirrors may be designed to maximize an efficiency of the integrated photovoltaic cell.

Abstract: Ultra-high reflectivity is projected for internal reflectors comprised of a metal film and nanostructured transparent conductive oxide (TCO) bi-layer on the back side of a semiconductor device. Oblique-angle deposition can be used to fabricate indium tin oxide (ITO) and other TCO optical thin-film coatings with a porous, columnar nanostructure. The resulting low-n dielectric films can then be employed as part of a conductive omni-directional reflector (ODR) structure capable of achieving high internal reflectivity over a broad spectrum of wavelengths and a wide range of angles. In addition, the dimensions and geometry of the nanostructured, low-n TCO films can be adjusted to enable diffuse reflections via Mie scattering. Diffuse ODR structures enhance the performance of light trapping and light guiding structures in photonic devices.

Abstract: A method of manufacturing a solid-state image sensor, comprising preparing a semiconductor substrate including a photoelectric converter and an insulating film which includes an opening and is formed in a region above the photoelectric converter, depositing a material having a refractive index higher than the insulating film in the opening, and annealing the material deposited in the opening by irradiating the material with one of light and radiation, wherein a light waveguide which is configured to guide an incident light to the photoelectric converter is formed through the depositing and the annealing.

Abstract: Discussed is a solar cell including a substrate having a first conductivity type; an emitter layer including a plurality of finger lines connected with an emitter layer; a plurality of rear finger lines connected with a back surface field, wherein the emitter layer includes first areas in contact with the plurality of front finger lines and second areas positioned between the plurality of front finger lines and having a lower doping concentration than that of the first areas, the back surface field includes areas in contact with the plurality of rear finger lines, and the number of the plurality of rear finger lines positioned on a rear surface of the substrate and the number of the plurality of front finger lines positioned on a front surface of the substrate are different.

Abstract: A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.

Abstract: Apparatus and methods are provided for use with solar energy. An optical material defines light-directing surface features, each configured to direct incident photonic energy away from a respective dead-space. Photovoltaic cells or other entities receive photonic energy propagating through the optical material, including that portion being directed by the light-directing surface features. Various entities can be located within the dead-spaces defined between the photovoltaic cells.

Abstract: Disclosed is a solar cell which allows more photogenerated carriers to be extracted while improving power generation efficiency. The solar cell has a light-receiving surface electrode layer (2), a first photoelectric conversion unit (31) layered over the light-receiving surface electrode layer (2), a reflective layer (32) comprising SiO and layered over the first photoelectric conversion unit (31), a second photoelectric conversion unit (33) layered over the reflective layer (32), and a backside electrode layer (4) layered over the second photoelectric conversion unit (33). An oxygen concentration of the reflective layer (32) is higher on a side of the second photoelectric conversion unit (33) than on a side of the first photoelectric conversion unit (31).

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.

Abstract: The present invention provides a method of annealing a semiconductor by applying a temperature-dependant phase switch layer to a semiconductor structure. The temperature-dependant phase switch layer changes phase from amorphous to crystalline at a predetermined temperature. When the semiconductor structure is annealed, electromagnetic radiation passes through the temperature-dependant phase switch layer before reaching the semiconductor structure. When a desired annealing temperature is reached the temperature-dependant phase switch layer substantially blocks the electromagnetic radiation from reaching the semiconductor structure. As a result, the semiconductor is annealed at a consistent temperature across the wafer. The temperature at which the temperature-dependant phase switch layer changes phase can be controlled by an ion implantation process.

Abstract: There is provided a method for manufacturing a solar cell, including the steps of: applying an antireflective-film-forming solution containing at least one of a metal oxide and a precursor of the metal oxide onto one main surface of a semiconductor substrate; and heating the semiconductor substrate having the antireflective-film-forming solution applied thereon, wherein in the step of applying an antireflective-film-forming solution, the antireflective-film-forming solution is applied in such an atmosphere that a water content is 0 g/m3 or more and 9.4 g/m3 or less.

Abstract: A method for manufacturing a solar cell includes providing a first conductivity type doped crystalline silicon wafer, depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer, turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating, applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer, dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask, while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H, depositing a first conductivity type doped a-Si:H layer.

Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.

Abstract: A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.

Abstract: A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a ?/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

Abstract: A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern.

Abstract: This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.

Abstract: A method of manufacturing a solar cell includes the steps of: providing a substrate having a front side, a back side and a doped region; forming a conductor layer on the front side; firing the conductor layer at a temperature such that the conductor layer is formed with a first portion embedded into the doped region and a second portion other than the first portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the conductor layer so that the second portion of the conductor layer is disposed in the ARC layer; and removing the ARC layer on the conductor layer so that the conductor layer has an exposed surface exposed out of the ARC layer, wherein the exposed surface of the conductor layer is substantially flush with a first exposed surface of the ARC layer.

Abstract: A method for manufacturing a back contact solar cell according to the present invention comprises the following steps: preparing a p-type silicon substrate having a via hole; performing a diffusion process to form an emitter layer all over the surface of the substrate; forming an etching mask on the front surface and back surface of the substrate so as to selectively expose a portion of the substrate; etching a portion of the thickness of the substrate in the region exposed to the etching mask so as to remove an emitter layer in the relevant region; forming an anti-reflection film on the front surface of the substrate; and forming a grid electrode on the front surface of the substrate, and forming an n-electrode and a p-electrode on the back surface of the substrate.

Abstract: The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.

Abstract: A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

Abstract: A solid-state imaging device including a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.