Abstract: The present invention provides a stacked-layered thin film solar cell and manufacturing method thereof The manufacturing method includes the steps of: providing a substrate, a first electrode layer and a first light-absorbing layer; providing a mask with a plurality of patterns above the first light-absorbing layer; forming an interlayer made of an opaque, highly reflective material by providing the mask on the first light-absorbing layer, wherein the interlayer has a plurality of light transmissive regions corresponding to the patterns, and the light transmissive regions are provided to divide the interlayer into a plurality of units; and then depositing a second light-absorbing layer on the units and a second electrode layer on the second light-absorbing layer.

Abstract: A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.

Abstract: The present invention relates to a solar cell. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type on the substrate, first and second anti-reflection layers that are sequentially positioned on the emitter layer, a first electrode electrically connected to the emitter layer, first to third passivation layers that are sequentially positioned on the substrate, each of the first to third passivation layers including a plurality of exposed portions, and a plurality of second electrodes electrically connected to portions of the substrate exposed by the plurality of exposed portions.

Abstract: A dye-sensitized semiconductor includes a semiconductor, and a copper(I) coordination compound comprising 2,9-dialkyl-diphenyl-1,10-phenanthrolinedisulfonate, on the semiconductor. The dye-sensitized semiconductor may be used as part of a photoanode in a solar cell, which also contains a counter-electrode, and a conductive medium containing a redox-active mediator, in contact with and separating the photoanode and the counter-electrode.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first conductive type first semiconductor layer on a back surface of the semiconductor substrate; a second conductive type second semiconductor layer on the back surface of the semiconductor substrate at a height different from the first semiconductor layer, the second semiconductor layer being separated from the first semiconductor layer; and a passivation layer on the back surface of the semiconductor substrate. The passivation layer covers at least a portion of the first semiconductor layer and at least a portion of the second semiconductor layer. The passivation layer includes impurities.

Abstract: The present invention relates to a method for preparing, on a silicon wafer, an n+pp+ or p+nn+ structure which includes the following consecutive steps: a) on a p or n silicon wafer (1), which includes a front surface (8) and a rear surface (9), a layer of boron-doped silicon oxide (BSG) (2) is formed on the rear surface (9) by PECVD, followed by a SiOx diffusion barrier (3); b) a source of phosphorus is diffused such that the phosphorus and the boron co-diffuse and in order also to form: on the front surface (8) of the wafer obtained at the end of step a), a layer of phosphorus-doped silicon oxide (PSG) (4) and an n+ doped area (5); and on the rear surface of the wafer obtained at the end of step a), a boron-rich area (BRL) (6), as well as a p+ doped area (7); c) the layers of BSG (2) and PSG (4) oxides and SiOx (3) are removed, the BRL (6) is oxidised and the layer resulting from said oxidation is removed.

Abstract: A transparent front electrode for a photovoltaic device comprising at least the following layers in sequence: —a glass substrate; —a lower anti-reflection layer, comprising in sequence from the glass substrate *a base layer of an (oxi)nitride of silicon and/or an (oxi)nitride of aluminium, *a middle layer of an oxide of Zn and Sn, *a top layer of an oxide of Zn; —a silver-based functional layer; and —an upper anti-reflection layer comprising in sequence from the silver-based functional layer *a first barrier layer of an oxide of Ni and Cr, *a second barrier layer of an Al-doped oxide of Zn, and *a buffer layer; wherein the first barrier layer of an oxide of Ni and Cr is located directly in contact with the silver-based functional layer or the first barrier layer of an oxide of Ni and Cr is separated from the silver-based functional layer by one or more additional barrier layers.

Abstract: One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.

Abstract: To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.

Abstract: This invention improves the efficiency of non-optimal solar cell materials, enabling them to achieve the same efficiency as optimal materials. The invention describes a method of improving the emission and absorption properties of a generic photovoltaic cell using feedback reflectors and/or filters, increasing the open circuit voltage of the cell, and thus the overall efficiency. Specific examples of single junction photovoltaics are detailed, but not limited to. Particularly, semiconducting solar cells in either single- or multi-junction formats are described. The invention can be applied to any functioning solar cell to increase the efficiency, while describing the maximal efficiency available using thermodynamic identities. Other examples are included, such as organic photovoltaic, nanostractured photovoltaic devices, and non-planar geometries.

Abstract: A semiconductor light detection device fabrication technique is provided in which the cap etch and anti-reflection coating steps are performed in a single, self-aligned lithography module.

Abstract: A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode.

Abstract: The invention relates to a photovoltaic cell (1) which includes at least one wafer (2) of a semi-conductor material, with a front surface (21) intended for receiving incident light and a back surface (22) opposite said front surface, as well as to methods for manufacturing said photovoltaic cell. The back surface (22) includes an electric contact (32) and a structure (4), referred to as an optical structure, which is discrete and capable of redirecting the incident light towards the core of the wafer.

Abstract: Cells including a first electrode layer, a photoelectric conversion layer, and a second electrode layer on a translucent substrate are connected. Between adjacent cells, a first separating groove separates the first electrode layer, a second separating groove separates the second electrode layer, and a connecting groove electrically connects the second electrode layer of a cell and the first electrode layer of the other. A reflective film is provided on the second electrode layer having a transparent conductive film and a metal film stacked in this order on the photoelectric conversion layer and at least the metal film is patterned into lines. The metal film is patterned into lines with a same width within the connecting groove and is connected to the first electrode layer of the adjacent cell. The reflective film is provided in the connecting groove where the metal film is not formed and in the second separating groove.

Abstract: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values.

Abstract: A method for manufacturing a solid-state image pickup device is provided. A first pixel isolation member is formed in a semiconductor substrate including pixels by implanting impurity ions in a first region of the substrate to separate pixels in the first region from each other when viewed from a surface of the substrate. A second pixel isolation member is also formed in the substrate by forming a trench in a second region of the substrate different from the first region to separate pixels in the second region from each other, and filling the trench with an electroconductive material harder to polish by CMP than the substrate. The thickness of the substrate is reduced by CMP on a rear surface of the substrate using the second pixel isolation member as a stopper.

Abstract: A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

Abstract: A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

Abstract: A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.

Abstract: According to one aspect, the invention relates to an asymmetric MIM type absorbent nanometric structure (1, 1?) intended to receive a wide-band incident light wave the absorption of which is to be optimised within a given spectral band, comprising an absorbent dielectric layer (10) in said spectral band, of subwavelength thickness, arranged between a metal array (11) of subwavelength period and a metal reflector (12).

Abstract: A solar cell and a solar cell module including the solar cells are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type positioned at a light receiving surface of the substrate; a plurality of first electrodes that are positioned on the emitter layer and are electrically connected to the emitter layer; and at least one first current collector that is positioned on the emitter layer in a direction crossing the plurality of first electrodes, wherein a thickness of each of the plurality of first electrodes is different from a thickness of the at least one first current collector, and a difference of the thickness of the each first electrode to the thickness of the at least one current collector is equal to or less than about 0.5 times the thickness of the at least one first current collector.

Abstract: A solar cell and method of fabrication are disclosed. In one embodiment of the present invention, the method comprises depositing a first doped amorphous silicon layer on a first surface of a silicon substrate, depositing a second doped amorphous silicon layer on the first surface of the silicon substrate. The second doped amorphous silicon layer is doped oppositely from the first doped amorphous silicon layer. An anneal is performed to transform the first doped amorphous silicon layer and second doped amorphous silicon layer to crystalline silicon layers.

Abstract: In the production of silicon solar cells wherein the process includes a dopant diffusion to form a pn junction, a back surface field layer, or a front surface field layer, resulting in the formation of a doped glass surface, a HF vapor etch is utilized to remove the doped glass layer and expose the wafer surface. The exposed surface is subjected to an oxygen treatment for predetermined times and temperatures to alter the surface state. The HF vapor etch followed by the oxygen treatment, or chemical oxidation, results in significant improvement in solar cell electrical properties.

Abstract: The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient.

Abstract: An embodiment of the present disclosure provides method of manufacturing a solar cell. The method comprises the steps of providing a silicon substrate, forming a P-N junction structure in the silicon substrate, forming an oxide layer for passivating the surface defect of the substrate that has a low reflectivity for AM1.5G solar spectrum, and forming a plurality of metal electrodes on the silicon substrate.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

Abstract: One disclosed embodiment concerns an aqueous inorganic coating precursor solution comprising a mixture of water, polynuclear aluminum hydroxide cations, and polyatomic ligands selected from nitrate (NO3?), nitrite (NO2?), or combinations thereof. In certain embodiments, the composition has a molar concentration ratio of polyatomic ligands to aluminum of less than 3; an aluminum cation concentration of from about 0.01 M to about 3.5 M; and/or a polyatomic anion concentration of from about 0.1 to about 2.5 times the aluminum cation concentration. Embodiments of a method for forming the precursor solution also are disclosed. For example, certain embodiments comprise adding a metal having a sufficient reduction potential to reduce nitric acid to an aqueous solution comprising aluminum nitrate (Al(NO3)3).

Abstract: Affords gallium nitride crystal growth methods, gallium nitride crystal substrates, epi-wafers, and methods of manufacturing the epi-wafers, that make it possible to curb cracking that occurs during thickness reduction operations on the crystal, and to grow gallium nitride crystal having considerable thickness. A gallium nitride crystal growth method in one aspect of the present invention is a method of employing a carrier gas, a gallium nitride precursor, and a gas containing silicon as a dopant, and by hydride vapor phase epitaxy (HVPE) growing gallium nitride crystal onto an undersubstrate. The gallium nitride crystal growth method is characterized in that the carrier-gas dew point during the gallium nitride crystal growth is ?60° C. or less.

Abstract: A method for metallization of solar cells is disclosed. The method includes providing a superstrate, such as a sheet of polymer film, to be used as a transport during metallization of solar cells. The method includes attaching the back sides of the solar cells to the sheet of polymer film. The method also includes forming contact holes through the sheet of polymer film to expose doped regions of the solar cells. The method also includes forming metals in the contact holes to electrically connect to the exposed doped regions of the solar cells. The method further includes electroplating the metals to form metal contacts of the solar cell. Subsequently, the method also includes separating the solar cells from other solar cells that were metallized while supported by the same sheet of polymer film to form strings of solar cells or individual solar cells.

Abstract: The present invention provides a non-vacuum method of depositing a photovoltaic absorber layer based on electrophoretic deposition of a mixture of nanoparticles with a controlled atomic ratio between the elements. The nanoparticles are first dispersed in a liquid medium to form a colloidal suspension and then electrophoretically deposited onto a substrate to form a thin film photovoltaic absorber layer. The absorber layer may be subjected to optional post-deposition treatments for photovoltaic absorption.

Abstract: A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.

Abstract: A photovoltaic device that includes a reflective stack. The reflective stack is formed from a transparent material between two metal layers. The reflective stack is located within the photovoltaic device to partially reflect wavelengths of radiation that do not substantially contribute to the photovoltaic effect.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

Abstract: Disclosed is a method for making a solar cell. In the method, there are provided first and second substrates each including first and second faces. There are provided first and second coating devices and a joining device. The first coating device is used to form a transparent electrode layer on the first face of the first substrate. The second coating device is used to form an absorbing layer on the first face of the second substrate. The second substrate is selenized by hot pressing. The joining device is used to join together the first and second substrates by joining the transparent electrode layer with the absorbing layer. The transparent electrode layer is joined with the absorbing layer by hot pressing. Thus, the solar cell is not made by coating one layer on another. Time for making the solar cell is reduced.

Abstract: A solar cell and a method of manufacturing the same are provided. The solar cell includes: i) a first conductive layer; ii) a plurality of nano structures that are positioned on the first conductive layer and that are extended to cross a surface of the first conductive layer and that are separated from each other; iii) a resin layer that is positioned on the first conductive layer and that is filled at space between the plurality of nano structures; iv) at least one semiconductor layer that is positioned on the resin layer and that covers the plurality of nano structures; and v) a second conductive layer that covers the semiconductor layer and that has a light transmittance lower than that of the first conductive layer.

Abstract: Provided is a bifacial photovoltaic arrangement comprising a bifacial cell which included a semiconductor layer having a first surface and a second surface, a first passivation layer formed on the first surface of the semiconductor layer and a second passivation layer formed on the second surface of the semiconductor layer, and a plurality of metallizations formed on the first and second passivation layers and selectively connected to the semiconductor layer. At least some of the metallizations on the bifacial photovoltaic arrangement comprising an elongated metal structure having a relatively small width and a relatively large height extending upward from the first and second passivation layers.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate, and forming a pad on the back side dielectric layer such that the pad is electrically connected to the vias.

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer.

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a p-type silicon wafer having on its front-side an n-type emitter with an ARC layer thereon and on its back-side a perforated dielectric passivation layer with local BSF contacts at the places of the perforations, (2) applying and drying a silver paste to form a silver back electrode pattern connecting the local BSF contacts on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract: A low-index silica coating may be made by forming silica sol comprising a silane and/or a colloidal silica. The silica precursor may be deposited on a substrate (e.g., glass substrate) to form a coating layer. The coating layer may then be cured and/or fired using temperature(s) of from about 550 to 700° C. A capping layer composition comprising an antifog composition including a siloxane and/or hydrofluororether may be formed, deposited on the coating layer, then cured and/or fired to form a capping layer The capping layer improves the durability of the coating. The low-index silica based coating may be used as an antireflective (AR) film on a front glass substrate of a photovoltaic device (e.g., solar cell) or any other suitable application in certain example instances.

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.

Abstract: Micro-fluid ejection heads have anti-reflective coatings. The coatings destructively interfere with light at wavelengths of interest during subsequent photo imaging processing, such as during nozzle plate imaging. Methods include determining wavelengths of photoresists. Layers are applied to the substrate and anodized. They form an oxidized layer of a predetermined thickness and reflectivity that essentially eliminates stray and scattered light during production of nozzle plates. Process conditions include voltages, biasing, lengths of time, and bathing solutions, to name a few. Tantalum and titanium oxides define further embodiments as do layer thicknesses and light wavelengths.

Abstract: Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a back electrode layer; a light absorbing layer on the back electrode layer; a protrusion pattern on the light absorbing layer; a first anti-reflective layer having a first thickness on the protrusion pattern; and a second anti-reflective layer having a second thickness smaller than the first thickness on the protrusion pattern.

Abstract: A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.

Abstract: Disclosed is a solar cell including a passivation film formed on a light-receiving surface of a silicon substrate, and an antireflection film formed on the passivation film, wherein the passivation film has a refractive index higher than that of the antireflection film. The passivation film and the antireflection film can each be made of a silicon nitride film.

Abstract: A solid-state imaging device includes a light receiving unit formed in a semiconductor base and configured to perform photoelectric conversion; an insulating layer disposed on the semiconductor base; a film constituting a cladding of a waveguide together with the insulating layer and being formed in an outer part of an interior of a hole by coating, the hole being formed in the insulating layer above the light receiving unit; a core of the waveguide, the core being composed of a material having a higher refractive index than a material for the insulating layer and a material for the film formed by coating, the core being formed in an inner part of the interior of the hole; and an inner lens integrated with the waveguide, the inner lens having a lens surface formed at the bottom of the hole at the interface between the film formed by coating and the core.

Abstract: A method of forming a photovoltaic device containing a buried emitter region and vertical metal contacts is provided. The method includes forming a plurality of metal nanoparticles on exposed portions of a single-crystalline silicon substrate that are not covered by patterned antireflective coatings (ARCs). A metal nanoparticle catalyzed etching process is then used to form trenches within the single-crystalline silicon substrate and thereafter the metal nanoparticles are removed from the trenches. An emitter region is then formed within exposed portions of the single-crystalline silicon substrate, and thereafter a metal contact is formed atop the emitter region.

Abstract: A method includes: a first step of forming a passivation film on a first surface of a crystalline silicon substrate of a first conductive type; a second step of diffusing an element of a second conductive type into a second surface of the crystalline silicon substrate by thermal diffusion to form a diffusion layer, whereby a pn junction is formed; a third step of forming an antireflection film on the diffusion layer; a fourth step of disposing a first electrode paste on the second surface of the crystalline silicon substrate; a fifth step of disposing a second electrode paste on the passivation film; and a sixth step of firing the first electrode paste and the second electrode paste to form electrodes.

Abstract: The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.