Abstract: A method for manufacturing a liquid ejection head includes: a step of preparing a substrate having a first surface on which energy generation elements and a first layer are provided; and a step of forming a supply port by etching the substrate with an etching liquid or an etching gas from a second surface which is a surface opposite to the first surface so as to enable the etching liquid or the etching gas to reach the first layer, and the first layer is divided by a region which is located between a portion of the first layer covering the energy generation elements and a portion of the first layer to which the etching liquid or the etching gas is reached.

Abstract: A method for processing a semiconductor substrate includes a) providing a substrate stack including a first layer, a plurality of cores arranged in a spaced relationship on the first layer and one or more underlying layers arranged below the first layer; b) depositing a conformal layer on the first layer and the plurality of cores; c) partially etching the conformal layer to create spacers arranged adjacent to sidewalls of the plurality of cores, wherein the partial etching of the conformal layer causes upper portions of the spacers to have an asymmetric profile; d) selectively etching the plurality of cores relative to the spacers and the first layer; e) depositing polymer film on sidewalls of the spacers; and f) etching the upper portions of the spacers to remove the asymmetric profile and to planarize the upper portions of the spacers.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including pattering a mandrel layer disposed over a semiconductor device layer to form a mandrel, forming a first set of spacers on sidewalls of the mandrel using a first material, selectively removing the mandrel disposed between the first set of spacers. The method further includes after removing the mandrel, using the first set of spacers as a first set of mandrels, forming a second set of spacers on sidewalls of the first set of mandrels using a second material, the second material having a different etch selectivity from the etch selectivity of the first material, the second set of spacers have substantially flat top surfaces, and selectively removing the first set of mandrels disposed between the second set of spacers.

Abstract: Methods of forming a pattern on a substrate include forming carbon-comprising material over a base material, and spaced first features over the carbon-comprising material. Etching is conducted only partially into the carbon-comprising material and spaced second features are formed within the carbon-comprising material which comprise the partially etched carbon-comprising material. Spacers can be formed along sidewalls of the spaced second features. The carbon-comprising material can be etched through to the base material using the spacers as a mask. Spaced third features can be formed which comprise the anisotropically etched spacers and the carbon-comprising material.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

Abstract: Methods of fabricating nano-scale structures are provided. A method includes forming a first hard mask pattern corresponding to first openings in a dense region, forming first guide elements on the first hard mask pattern aligned with the first openings, and forming second hard mask patterns in a sparse region to provide isolated patterns. A blocking layer is formed in the sparse region to cover the second hard mask patterns. A first domain and second domains are formed in the dense region using a phase separation of a block co-polymer layer. Related nano-scale structures are also provided.

Abstract: In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an additional liner material after the selective deposition of a strain-inducing semiconductor material in selected active regions. Moreover, the dielectric cap materials of the gate electrode structures may be removed on the basis of a process flow that significantly reduces the degree of material erosion in isolation regions and active regions by avoiding the patterning and removal of any sacrificial oxide spacers.

Abstract: A silicon/carbon alloy may be formed in drain and source regions, wherein another portion may be provided as an in situ doped material with a reduced offset with respect to the gate electrode material. For this purpose, in one illustrative embodiment, a cyclic epitaxial growth process including a plurality of growth/etch cycles may be used at low temperatures in an ultra-high vacuum ambient, thereby obtaining a substantially bottom to top fill behavior.

Abstract: A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.

Abstract: Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.

Abstract: One illustrative method disclosed herein involves forming a layer of insulating material, forming a patterned layer of photoresist above the layer of insulating material, wherein the patterned layer of photoresist has an opening defined therein, forming an internal spacer within the opening in the patterned layer of photoresist, wherein the spacer defines a reduced-size opening, performing an etching process through the reduced-size opening on the layer of insulating material to define a trench/hole type feature in the layer of insulating material, and forming a conductive structure in the trench/hole type feature in the layer of insulating material.

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element on a sidewall of the opening and extending over an upper surface of the dielectric material.

Abstract: A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.

Abstract: A method includes providing a semiconductor structure including a substrate and a transistor element. A layer of a spacer material is deposited over the substrate and the gate structure, wherein the deposited layer of spacer material has an intrinsic stress. Ions are implanted into the layer of spacer material. After the deposition of the layer of spacer material and the implantation of ions into the layer of spacer material, a sidewall spacer is formed at sidewalls of the gate structure from the layer of spacer material.

Abstract: A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.

Abstract: A method of manufacturing a structure includes a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a basic etching mask corresponding to a target shape and having at least a first structure with a projecting corner and a second structure adjoining the first structure with an opening intervening therebetween, and a correction etching mask extending from the projecting corner of an etching mask of the first structure and connected to an etching mask of the second structure, and a second step of performing anisotropic etching of the monocrystal silicon substrate having the basic etching mask and the correction etching mask to form the target shape.

Abstract: Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.

Abstract: In a method for manufacturing a semiconductor device, an opening formed in a semiconductor substrate by using a mask and covering an inner side face of the opening with a sidewall protective film. The mask is removed, while a part of the sidewall protective film remains.

Abstract: The present invention relates to a semiconductor process, a semiconductor element and a package having a semiconductor element. The semiconductor element includes a base material and at least one through via structure. The base material has a first surface, a second surface, at least one groove and at least one foundation. The groove opens at the first surface, and the foundation is disposed on the first surface. The through via structure is disposed in the groove of the base material, and protrudes from the first surface of the base material. The foundation surrounds the through via structure. Whereby, the foundation increases the strength of the through via structure, and prevents the through via structure from cracking.

Abstract: A method includes performing an etching step on a package. The package includes a package component, a connector on a top surface of the package component, a die bonded to the top surface of the package component, and a molding material molded over the top surface of the package component. The molding material covers the connector, wherein a portion of the molding material covering the connector is removed by the etching step, and the connector is exposed.

Abstract: A dry etching method includes a first step and a second step. The first step includes generating a first plasma from a gas mixture, which includes an oxidation gas and a fluorine containing gas, and performing anisotropic etching with the first plasma on a silicon layer to form a recess in the silicon layer. The second step includes alternately repeating an organic film forming process whereby an organic film is deposited on the inner surface of the recess with a second plasma, and an etching process whereby the recess covered with the organic film is anisotropically etched with the first plasma. When an etching stopper layer is exposed from a part of the bottom surface of the recess formed in the first step, the first step is switched to the second step.

Abstract: A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.

Abstract: A method for processing a substrate includes preparing a substrate having a first layer on a first surface side thereof, the first layer having a material capable of suppressing transmission of laser light, processing the substrate with laser light from a second surface that is opposite the first surface of the substrate toward the first surface of the substrate, and allowing the laser light to reach the first layer to form a hole in the substrate, and performing etching of the substrate from the second surface through the hole.

Abstract: A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.

Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.

Abstract: A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate including a channel region, forming a gate electrode structure on the channel region of the semiconductor substrate, forming a first trench in the semiconductor substrate, and forming a second trench in the semiconductor device. The first trench may include a first tip that protrudes toward the channel. The second trench may be an enlargement of the first trench and may include a second tip that also protrudes toward the channel region. In some examples, the second tip may protrude further towards the channel region than the first tip.

Abstract: A method for semiconductor processing is provided wherein a workpiece having an underlying body and a plurality of features extending therefrom, is provided. A first set of the plurality of features extend from the underlying body to a first plane, and a second set of the plurality features extend from the underlying body to a second plane. A protection layer overlies each of the plurality of features and an isolation layer overlies the underlying body and protection layer, wherein the isolation has a non-uniform first oxide density associated therewith. The isolation layer anisotropically etched based on a predetermined pattern, and then isotropically etched, wherein a second oxide density of the isolation layer is substantially uniform across the workpiece. The predetermined pattern is based, at least in part, on a desired oxide density, a location and extension of the plurality of features to the first and second planes.

Abstract: A method for etching a dielectric layer is provided. The dielectric layer is disposed over a substrate and below a patterned mask having a line-space pattern. The method includes (a) providing an etchant gas comprising CF4, COS, and an oxygen containing gas, (b) forming a plasma from the etchant gas, and (c) etching the dielectric layer into the line-space pattern through the mask with the plasma from the etchant gas. The gas flow rate of CF4 may have a ratio greater than 50% of a total gas flow rate of all reactive gas components. The gas flow rate of COS may be between 1% and 50%. The method reduces bowing in etching of the dielectric layer by adding COS to the etchant gas.

Abstract: A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F.

Abstract: In sophisticated semiconductor devices, replacement gate approaches may be applied in combination with a process strategy for implementing a strain-inducing semiconductor material, wherein superior proximity of the strain-inducing semiconductor material and/or superior robustness of the replacement gate approach may be achieved by forming the initial gate electrode structures with superior uniformity and providing at least one cavity for implementing the strained channel regions in a very advanced manufacturing stage, i.e., after completing the basic transistor configuration.

Abstract: Method of fabricating a semiconductor device includes forming a gate having a first material on a substrate and forming a layer of a second material overlaying the gate. Sidewall spacers are formed on opposite sides of the gate. The substrate is dry etched using the layer of second material and the sidewall spacers as a mask forming a recess in the substrate between two adjacent gates. A liner oxide layer is formed on inner walls of the recess. The liner oxide layer is removed by isotropic wet etching. Orientation selective wet etching is performed on the recess to shape the inner wall of the recess so as to cause the inner wall of the recess to be sigma-shaped. By removing the substrate portions having lattice defects due to dry etching through oxidation and wet etching, defect-free epitaxial growth performance is realized.

Abstract: A method of fabricating semiconductor device includes forming a plurality of gates on a substrate, forming a top layer on a top surface of each gate, forming sidewall spacers on opposite sides of each gate, and forming sacrificial spacers on the sidewall spacers. The method further includes performing a dry etching process on the substrate using the top layer and the sacrificial spacers as a mask to form a recess of a first width in the substrate between two adjacent gates, performing an isotropic wet etching process on the recess to expand the first width to a second width, and performing an orientation selective wet etching process on the recess to shape the rectangular-shaped recess into a ?-shaped recess.

Abstract: A semiconductor device having tipless epitaxial source/drain regions and a method for its formation are described. In an embodiment, the semiconductor device comprises a gate stack on a substrate. The gate stack is comprised of a gate electrode above a gate dielectric layer and is above a channel region in the substrate. The semiconductor device also comprises a pair of source/drain regions in the substrate on either side of the channel region. The pair of source/drain regions is in direct contact with the gate dielectric layer and the lattice constant of the pair of source/drain regions is different than the lattice constant of the channel region. In one embodiment, the semiconductor device is formed by using a dielectric gate stack placeholder.

Abstract: A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.

Abstract: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: Disclosed is a means for stabilizing quality of a semiconductor device by preventing projections from being formed in the bottom of a through hole. A method of manufacturing a semiconductor device includes a process of forming a through hole reaching a metal nitride layer through an interlayer insulating layer on a semiconductor wafer on which the wiring layer, the metal nitride layer formed on the wiring layer, and the interlayer insulating layer covering the wiring layer and the metal nitride layer are formed. The through hole forming process includes: a first etching step of etching the interlayer insulating layer by an anisotropic etching method with the semiconductor wafer set to a first temperature; and a second etching step of etching an upper surface of metal nitride layer by an anisotropic etching method with the semiconductor wafer set to a second temperature higher than the first temperature.

Abstract: A method for capping lines includes forming a metal film layer on a copper line by a selective deposition process, the copper line disposed in a dielectric substrate, wherein the depositing also results in the deposition of stray metal material on the surface of the dielectric substrate, and etching with an isotropic etching process to remove a portion of the metal film layer and the stray metal material on the surface of the dielectric substrate, wherein the metal film layer is deposited at an initial thickness sufficient to leave a metal film layer cap remaining on the copper line following the removal of the stray metal material.

Abstract: Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.

Abstract: A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.

Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

Abstract: A diaphragm is formed by etching a substrate. This substrate has a first surface provided with a depression by isotropic dry etching, and a second surface opposite the first surface. Furthermore, a through-hole is formed from the depression to the second surface by anisotropic dry etching. The depression and the through-hole are formed by using one resist mask. The depression has a hemispherical shape or a semi-elliptical spherical shape.

Abstract: A method for forming an active pillar of a vertical channel transistor includes forming a hard mask pattern on a substrate, etching vertically the substrate using the hard mask pattern as an etch barrier to form an active pillar, and etching horizontally to remove by-product remaining on the exposed substrate, the hard mask pattern and the active pillar and at the same time to reduce line width of the hard mask pattern and the active pillar, wherein a unit cycle in which the vertical etching and the horizontal etching are each performed subsequently once, respectively, is performed repeatedly at least two times or more. According to the present invention, an active pillar having vertical profiles on its sidewalls and having height and line width (or diameter) required in a highly integrated vertical channel transistor can be provided.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an orientation-dependent etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.

Abstract: Method of manufacturing a semiconductor device structure, including the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.

Abstract: A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening.

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.