With Relative Movement Between Substrate And Confined Pool Of Etchant Patents (Class 438/747)
  • Patent number: 10354899
    Abstract: A wafer transfer method which transfers a wafer with a disc shape to a groove for vertically placing the wafer therein, by use of a wafer holding hand, includes causing the wafer holding hand to hold the wafer at at least three support points on an edge of the wafer; moving the wafer holding hand holding the wafer to cause the wafer with a vertical posture in which the wafer is vertically oriented to be positioned above the groove for vertically placing the wafer therein; causing the wafer holding hand to cease to hold the wafer and to support the wafer at two support points on the wedge of the wafer; and moving the wafer holding hand supporting the wafer downward until the edge of the wafer moves into the groove for vertically placing the wafer therein.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: July 16, 2019
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takayuki Fukushima, Ryosuke Kanamaru
  • Patent number: 9238876
    Abstract: A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided.
    Type: Grant
    Filed: December 25, 2009
    Date of Patent: January 19, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Kazuhiro Sakai, Tetsuya Atsumi, Yukiyasu Miyata
  • Patent number: 9040431
    Abstract: A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: May 26, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hirohisa Fujita, Shuji Koyama, Keiji Matsumoto, Kenta Furusawa
  • Patent number: 9023228
    Abstract: A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: May 5, 2015
    Assignee: Enthone Inc.
    Inventors: Mark Peter Schildmann, Ulrich Prinz, Christoph Werner
  • Publication number: 20150111311
    Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hsueh CHANGCHIEN, Yu-Ming Lee, Chi-Ming Yang
  • Patent number: 9005464
    Abstract: A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: April 14, 2015
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, David F. Hilscher
  • Patent number: 8980121
    Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: March 17, 2015
    Assignees: Mitsubishi Gas Chemical Company, Inc., Sharp Kabushiki Kaisha
    Inventors: Tomoyuki Adaniya, Satoshi Okabe, Toshiyuki Gotou, Taketo Maruyama, Kazuki Kobayashi, Keiichi Tanaka, Wataru Nakamura, Kenichi Kitoh, Tetsunori Tanaka
  • Patent number: 8951820
    Abstract: A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: February 10, 2015
    Assignee: Postech Academy-Industry Foundation
    Inventors: Jong Lam Lee, Jun Ho Son, Yang Hee Song
  • Patent number: 8945341
    Abstract: A method and device for wet treatment of a plate-like article comprises a spin chuck for holding and rotating the plate-like article. Gas supply nozzles open on a surface of the spin chuck facing a first side of the plate-like article. The spin chuck is configured to direct gas discharged from the gas supply nozzles radially outwardly through a gap defined between an upper surface of the spin chuck and a downwardly facing surface of a plate-like article positioned on the spin chuck. Liquid supply nozzles open on the surface of the spin chuck facing a first side of the plate-like article and positioned radially outwardly of the gas supply nozzles. The liquid supply nozzles are positioned beneath a peripheral region of a plate-like article positioned on the spin chuck.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: February 3, 2015
    Assignee: LAM Research AG
    Inventors: Masaichiro Ken Matsushita, Michael Puggl
  • Publication number: 20150031214
    Abstract: A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.
    Type: Application
    Filed: July 23, 2014
    Publication date: January 29, 2015
    Inventors: Derek W Bassett, Wallace P Printz, Gentaro Goshi, Hisashi Kawano, Yoshihiro Kai
  • Patent number: 8940644
    Abstract: A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: January 27, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Atsushi Mizutani, Tetsuya Kamimura, Akiko Yoshii, Tetsuya Shimizu
  • Patent number: 8932962
    Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: January 13, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Weibo Yu, Kuo Bin Huang, Chao-Cheng Chen, Syun-Ming Jang
  • Patent number: 8920567
    Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: December 30, 2014
    Assignee: International Business Machines Corporation
    Inventors: Vamsi Devarapalli, Colin J. Goyette, Michael R. Kennett, Mahmoud Khojasteh, Qinghuang Lin, James J. Steffes, Adam D. Ticknor, Wei-tsu Tseng
  • Patent number: 8859436
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, masking portions of each fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
    Type: Grant
    Filed: March 11, 2009
    Date of Patent: October 14, 2014
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: James S. Im, Robert S. Sposili, Mark A. Crowder
  • Publication number: 20140273500
    Abstract: In certain embodiments the metal liftoff tool comprises an immersion tank for receiving a wafer cassette with wafers therein, the immersion tank including an inner weir, a lifting and lowering mechanism capable of raising and lowering the wafer cassette while submerged in fluid in the immersion tank, low pressure high velocity primary spray jets for stripping the metal, the primary spray jets positioned at opposing sides of the immersion tank parallel to the wafer surfaces planes, and secondary spray jets for pressure equalization force, positioned at the bottom of the immersion tank. A wafer lift insert is positioned at the bottom of the immersion tank to receive and periodically lift the wafers within the cassette.
    Type: Application
    Filed: December 5, 2013
    Publication date: September 18, 2014
    Applicant: MEI, LLC
    Inventor: Scott Tice
  • Patent number: 8834729
    Abstract: A method for making a printed wiring member including wire-bondable contact pads and wear-resistant connector pads, the method includes the steps of a) providing a blank printed wiring member comprising a copper foil laminated to a dielectric substrate; b) masking the blank printed wiring member to protect regions of the copper foil; c) removing copper in unprotected regions of the blank printed wiring member to form a patterned printed wiring member including contact pads and connector pads; d) depositing a nickel coating on the patterned printed wiring member using an electroless nickel deposition process; e) depositing a gold layer on the nickel coating using an electroless gold deposition process; and f) depositing palladium on the gold layer using an electroless palladium deposition process to improve wear resistance of the connector pads while preserving bondability of the contact pads.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: September 16, 2014
    Assignee: Eastman Kodak Company
    Inventors: Samuel Chen, Charles I. Levey
  • Patent number: 8835329
    Abstract: Methods for combinatorially processing semiconductor substrates are provided. The methods may involve receiving a substrate into a combinatorial processing chamber and sealing a plurality of flow cells against a surface of the substrate. The plurality of flow cells is enclosed within the combinatorial processing chamber to define an enclosed external environment for the plurality of flow cells. A pressure differential is created between a reaction area of the plurality of flow cells of the combinatorial processing chamber and the external environment, wherein each flow cells of the plurality of flow cells defines a site isolating region of the substrate. The regions the substrate are then combinatorially processed.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: September 16, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Sandeep Mariserla, Aaron T. Francis, Jeffrey Chih-Hou Lowe, Robert Anthony Sculac
  • Publication number: 20140227884
    Abstract: An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.
    Type: Application
    Filed: February 8, 2013
    Publication date: August 14, 2014
    Applicant: LAM RESEARCH AG
    Inventors: Philipp ENGESSER, David HENRIKS, Anders Joel BJOERK
  • Patent number: 8764997
    Abstract: A method of metal deposition may include chemically modifying a surface of a substrate to make the surface hydrophobic. The method may further include depositing a layer of metal over the hydrophobic surface and masking at least a portion of the deposited metal layer to define a conductive metal structure. The method may also include using an etching agent to etch unmasked portions of the deposited metal layer.
    Type: Grant
    Filed: July 13, 2010
    Date of Patent: July 1, 2014
    Assignee: STMicroelectronics S.R.L.
    Inventors: Fabrizio Porro, Luigi Giuseppe Occhipinti
  • Patent number: 8759229
    Abstract: A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: June 24, 2014
    Assignee: Sumco Corporation
    Inventors: Sakae Koyata, Kazushige Takaishi, Tomohiro Hashii, Katsuhiko Murayama, Takeo Katoh
  • Patent number: 8735261
    Abstract: A method and a system are described herein for applying etchant to edges of a plurality of wafers. The system includes a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller. The cassette permits axial rotation of the wafers about an axis. A method of applying etchant to the edge of the wafer includes placing the wafer edge in contact with the roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contact an etchant contained in a sump during rotation so that etchant is applied to the wafer edge.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: May 27, 2014
    Assignee: MEMC Electronic Materials, Inc.
    Inventor: Robert W. Standley
  • Patent number: 8685864
    Abstract: In a method for the treatment of a substrate surface of a flat substrate with a process medium at the substrate underside, the process medium has a removing or etching effect on the substrate surface. The substrates are wetted with the process medium from below in a manner lying horizontally. The upwardly facing substrate top side is wetted or covered with water or a corresponding protective liquid over a large area or over the whole area as protection against the process medium acting on the substrate top side.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: April 1, 2014
    Assignee: Gebr. Schmid GmbH
    Inventor: Christian Schmid
  • Patent number: 8563440
    Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: October 22, 2013
    Assignee: Schott Solar AG
    Inventors: Andreas Teppe, Berthold Schum, Dieter Franke, Ingo Schwirtlich, Knut Vaas, Wilfried Schmidt
  • Publication number: 20130260570
    Abstract: In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously supplying a first processing liquid onto an upper surface of a substrate while rotating the substrate. It is thereby possible to suppress vaporization of the first processing liquid on the substrate and further suppress a decrease in the temperature of the substrate due to the heat of vaporization as it goes from a center portion of the substrate toward a peripheral portion thereof as compared with under normal pressure. As a result, it is possible to improve the uniformity in the temperature of the upper surface of the substrate during the etching process using the first processing liquid and improve the uniformity of etching over the entire upper surface of the substrate.
    Type: Application
    Filed: March 28, 2013
    Publication date: October 3, 2013
    Applicant: DAINIPPON SCREEN MFG. CO., LTD
    Inventors: Hirofumi MASUHARA, Kenichiro ARAI, Masahiro MIYAGI, Toru ENDO
  • Publication number: 20130244442
    Abstract: There is provided with an etching method using an etching apparatus. Four arms can be positioned in a direction substantially from a center of the stage toward a peripheral portion with an angle difference of about 90°. Etchant is supplied to a first position nearest to the center of the object which is rotating, from a first etchant supply nozzle placed on a first arm. Etchant is further supplied to a second position second nearest to the center of the object, from a second etchant supply nozzle placed on a second arm. The second arm is substantially symmetrically positioned with respect to the first arm and the second arm has an angle difference of about 180° with respect to the first arm.
    Type: Application
    Filed: May 6, 2013
    Publication date: September 19, 2013
    Inventor: NATIONAL UNIVERSITY CORPORATION OF TOHOKU UNIVERSITY
  • Patent number: 8530359
    Abstract: An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: September 10, 2013
    Assignee: Novellus Systems, Inc.
    Inventors: Steven T. Mayer, David W. Porter
  • Patent number: 8513140
    Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.
    Type: Grant
    Filed: September 23, 2010
    Date of Patent: August 20, 2013
    Assignees: Sony Corporation, Kabushiki Kaisha Toshiba, Kanto Kagaku Kabushiki Kaisha
    Inventors: Masafumi Muramatsu, Kazumi Asada, Yukino Hagino, Atsushi Okuyama, Takahito Nakajima, Kazuhiko Takase, Yoshihiro Uozumi, Tsuyoshi Matsumura, Takuo Ohwada, Norio Ishikawa
  • Patent number: 8481432
    Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: July 9, 2013
    Assignee: Novellus Systems, Inc.
    Inventors: Steven T. Mayer, Daniel A. Koos, Eric Webb
  • Patent number: 8466071
    Abstract: An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: June 18, 2013
    Assignee: Sumco Corporation
    Inventors: Sakae Koyata, Tomohiro Hashii, Katsuhiko Murayama, Kazushige Takaishi, Takeo Katoh
  • Patent number: 8435903
    Abstract: In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: May 7, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshihiro Ogawa, Shinsuke Kimura, Tatsuhiko Koide, Hisashi Okuchi, Hiroshi Tomita
  • Patent number: 8309471
    Abstract: A layer to be etched is first formed in a substrate. Then, a mask pattern is formed over the layer to be etched. Then, the layer to be etched is wet-etched using the mask pattern as a mask. In the procedure of performing wet etching, the substrate is dipped into an etching bath with the mask pattern downward.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: November 13, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Yusaku Murabe, Fumihiro Bekku
  • Patent number: 8159050
    Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: April 17, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Janos Fucsko, David H. Wells, Patrick Flynn, Whonchee Lee
  • Patent number: 8145342
    Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: March 27, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Sumeet S. Bhagavat, Roland R. Vandamme, Tomomi Komura, Tomhiko Kaneko, Takuto Kazama
  • Patent number: 8053371
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: November 8, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Patent number: 8043974
    Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: October 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Dae Park, Young You, Tae-Hyo Choi, Hun-Jung Yi, Kun-Hyung Lee
  • Publication number: 20110223771
    Abstract: The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.
    Type: Application
    Filed: March 15, 2010
    Publication date: September 15, 2011
    Inventors: Yadong Jiang, Zhiming Wu, Tao Wang, Weizhi Li, Xiaolin Han
  • Publication number: 20110223741
    Abstract: A method and a system are described herein for applying etchant to edges of a plurality of wafers. The system includes a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller. The cassette permits axial rotation of the wafers about an axis. A method of applying etchant to the edge of the wafer includes placing the wafer edge in contact with the roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contact an etchant contained in a sump during rotation so that etchant is applied to the wafer edge.
    Type: Application
    Filed: November 16, 2009
    Publication date: September 15, 2011
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventor: Robert W. Standley
  • Publication number: 20110195579
    Abstract: Controlling scribe line orientation during wet-bench processes has been found to improve yield and reduce particles from inadequate draining when the scribe lines are oriented about 45 degrees from horizontal. A wafer is provided to the wet bench apparatus and immersed in a solution. When removed from the solution, the wafer should be oriented vertically with scribe lines oriented about 45 degrees, plus or minus 15 degrees from horizontal. Wafer scribe line orientation are checked and changed before the wet bench process or during the wet bench processing.
    Type: Application
    Filed: February 11, 2010
    Publication date: August 11, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Yi-Tung YEN
  • Publication number: 20110183524
    Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.
    Type: Application
    Filed: September 29, 2009
    Publication date: July 28, 2011
    Applicant: SCHOTT SOLAR AG
    Inventors: Andreas Teppe, Berthold Schum, Dieter Franke, Ingo Schwirtlich, Knut Vaas, Wilfried Schmidt
  • Patent number: 7981807
    Abstract: Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
    Type: Grant
    Filed: March 19, 2008
    Date of Patent: July 19, 2011
    Assignee: SANYO Electric Co., Ltd.
    Inventors: Akira Suzuki, Takashi Noma, Hiroyuki Shinogi, Yukihiro Takao, Shinzo Ishibe, Shigeki Otsuka, Keiichi Yamaguchi
  • Patent number: 7976637
    Abstract: A substrate processing system which enables a minute pieces of foreign matter attached to a substrate surface to be detected and are suitable for mass production of substrates. The substrate processing system has a substrate processing apparatus that carries out predetermined processing on a substrate. The substrate processing system comprises a substrate surface processing apparatus having a fluid supply unit that supplies onto a surface of the substrate a fluid containing an altering substance that alters a substance exposed at the surface of the substrate, and a substrate surface inspecting apparatus that inspects the surface of the substrate onto which the fluid has been supplied.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: July 12, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Nagaike, Tsuyoshi Moriya
  • Patent number: 7943526
    Abstract: The present invention relates in general terms to the treatment or processing of substrate surfaces. In particular, the invention relates to processes for modifying the surface of silicon wafers.
    Type: Grant
    Filed: March 22, 2004
    Date of Patent: May 17, 2011
    Assignee: Rena Sondermaschinen GmbH
    Inventor: Franck Delahaye
  • Patent number: 7906438
    Abstract: An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: March 15, 2011
    Assignee: Sumco Corporation
    Inventors: Sakae Koyata, Tomohiro Hashii, Katsuhiko Murayama, Kazushige Takaishi, Takeo Katoh
  • Publication number: 20110045673
    Abstract: The invention relates to a method for manufacturing a silicon surface with a pyramidal structure, in which a silicon wafer containing the silicon surface is dipped into an etching solution. To produce a pyramidal structure that is as homogeneous as possible, according to the invention it is proposed that the silicon surface be treated with ozone prior to coming into contact with the etching solution.
    Type: Application
    Filed: March 12, 2009
    Publication date: February 24, 2011
    Applicant: Rena GmbH
    Inventors: Juergen Schweckendiek, Ahmed Abdelbar Eljaouhari
  • Patent number: 7887636
    Abstract: A substrate dryer includes, among other things, means for generating isopropyl alcohol bubbles, and a vibrator to atomize stored isopropyl alcohol. A heater may be provided to heat pumped isopropyl alcohol, as wells as a spray nozzle to spray the heated IPA to the vibrator. It is possible to increase the concentration of the isopropyl alcohol supplied for the purpose of drying the substrate. Improved substrate drying is achieved.
    Type: Grant
    Filed: January 11, 2006
    Date of Patent: February 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Hyeon Nam, Seung-Kun Lee
  • Patent number: 7743783
    Abstract: A method and apparatus for recycling a process fluid from a drain of a semiconductor process tool. The process fluid may be an acidic cobalt solution or an electroless cobalt solution used in a semiconductor process step to prevent electromigration in copper interconnects. The used process fluid is collected from the tool drain and recycled back to the tool inlet if a condition of the fluid is within a predetermined range. Otherwise, the used process fluid is drained from the system. The system may also operate in a bleed and feed mode where a portion of the used process fluid is periodically drained from the system.
    Type: Grant
    Filed: April 2, 2007
    Date of Patent: June 29, 2010
    Assignee: Air Liquide Electronics U.S. LP
    Inventor: David Paul Edwards
  • Patent number: 7709341
    Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: May 4, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Janos Fucsko, David H. Wells, Patrick Flynn, Whonchee Lee
  • Patent number: 7691207
    Abstract: A method for cleaning a disk-shape glass substrate, which comprises rotating the disk-shape glass substrate on its center with its main surface vertical, and making a cleaning fluid irradiated with ultrasonic waves run down on the outer peripheral edge surface of the rotating glass substrate.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: April 6, 2010
    Assignee: Asahi Glass Company, Limited
    Inventors: Osamu Miyahara, Kazuo Mannami, Kuniyuki Someya, Tsutomu Maruyama
  • Publication number: 20100062611
    Abstract: Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 11, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming Chyi Liu, Yao Fei Chuang, Martin Liu, Gwo-Yuh Shiau, Chia-Shiung Tsai
  • Patent number: 7601642
    Abstract: The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafer is subjected to alkaline cleaning to be removed of contaminants resulting from preceding machining; and step 16 in which the wafer is alternately transferred between two groups of etching tanks one of which contain acidic etching solutions and the other alkaline etching solutions, wherein an additional step 12 is introduced between step 11 and step 13 in which a wafer is immersed in an acidic solution containing hydrofluoric acid (HF) and nitric acid (HNO3) at a volume ratio of ? to ½ (HF/HNO3) so that degraded superficial layers occurring on the front and rear surfaces of the wafer as a result of machining can be removed and the edge surface of the wafer can be beveled.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: October 13, 2009
    Assignee: Sumco Corporation
    Inventors: Sakae Koyata, Kazushige Takaishi