With Substrate Handling During Coating (e.g., Immersion, Spinning, Etc.) Patents (Class 438/782)
  • Patent number: 10229828
    Abstract: In a method of treating a semiconductor substrate, a plurality of active regions and a plurality of trench isolation regions are formed by selectively etching the semiconductor substrate. The semiconductor substrate is washed by providing deionized water to the semiconductor substrate. A silicon-based solution is provided to the semiconductor substrate by replacing the deionized water disposed on the semiconductor substrate with the silicon-based solution. A silicon oxide material is formed from the silicon-based solution by performing a heat treatment on the silicon-based solution and the semiconductor substrate. The silicon oxide material fills the trench isolation regions.
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: March 12, 2019
    Assignee: SK HYNIX INC.
    Inventors: Yong Soo Choi, Ho Jin Jeong
  • Patent number: 10153252
    Abstract: A wafer to wafer structure includes a first wafer, a second wafer. A first bonding layer and a second bonding layer are disposed between the first wafer and the second wafer. A plurality of first interconnects are disposed within the he first bonding layer. A plurality of second interconnects are disposed within the second bonding layer. An interface is disposed between the first bonding layer and the second bonding layer. At least a through silicon via penetrates the first wafer, the first bonding layer and the interface to enter the second bonding layer. The through silicon via contacts one of the first interconnects and one of the second interconnects.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: December 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventor: Ming-Tse Lin
  • Patent number: 10120285
    Abstract: A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: November 6, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Kousuke Yoshihara, Hideharu Kyouda, Koshi Muta, Taro Yamamoto, Yasushi Takiguchi, Masahiro Fukuda
  • Patent number: 10023956
    Abstract: Methods and apparatuses for conditioning chambers using a two-stage process involving a low bias and a high bias stage are provided. Methods also involve clamping a protective electrostatic chuck cover to a pedestal by applying a bias to the electrostatic chuck during the high bias stage while cooling the protective electrostatic chuck cover, such as by flowing helium to the backside of the cover.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: July 17, 2018
    Assignee: Lam Research Corporation
    Inventors: Lin Cui, Jason Daejin Park
  • Patent number: 9929008
    Abstract: A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: March 27, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Yu Wamura, Fumiaki Hayase, Masahiko Kaminishi, Yu Sasaki, Kosuke Takahashi
  • Patent number: 9818604
    Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: November 14, 2017
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Hai-Won Kim, Chang-Hun Shin, Seok-Yun Kim, Choon-Sik Jeong
  • Patent number: 9793118
    Abstract: Disclosed are a method and an apparatus for applying a liquid onto a substrate. The method for treating a substrate, the method includes: a liquid supplying step of supplying a treatment liquid for forming a liquid film on the substrate while rotating the substrate; and a liquid diffusing step of diffusing the treatment liquid discharged to the substrate by rotating the substrate, after the liquid supplying step. The liquid diffusing step includes: a primary diffusion step of rotating the substrate at a first diffusion speed; and a secondary diffusion step of rotating the substrate at a second diffusion speed, after the primary diffusion step. The second diffusion speed is higher than the first diffusion speed. Accordingly, the treatment liquid can be applied to the substrate again by performing the secondary diffusion step, making it possible to adjust the thickness of a photosensitive film.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: October 17, 2017
    Assignee: Semes Co., Ltd.
    Inventors: Eun Saem Ahn, Choongki Min, Jung Yul Lee, Min Jung Park
  • Patent number: 9738787
    Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: August 22, 2017
    Assignee: CHEIL INDUSTRY, INC.
    Inventors: Hui-Chan Yun, Taek-Soo Kwak, Mi-Young Kim, Sang-Hak Lim, Kwen-Woo Han, Go-Un Kim, Bong-Hwan Kim, Sang-Kyun Kim, Yoong-Hee Na, Eun-Su Park, Jin-Hee Bae, Hyun-Ji Song, Han-Song Lee, Seung-Hee Hong
  • Patent number: 9536771
    Abstract: The present disclosure relates to an integrated chip IC having transistors with structures separated by a flowable dielectric material, and a related method of formation. In some embodiments, an integrated chip has a semiconductor substrate and an embedded silicon germanium (SiGe) region extending as a positive relief from a location within the semiconductor substrate to a position above the semiconductor substrate. A first gate structure is located at a position that is separated from the embedded SiGe region by a first gap. A flowable dielectric material is disposed between the gate structure and the embedded SiGe region and a pre-metal dielectric (PMD) layer disposed above the flowable dielectric material. The flowable dielectric material provides for good gap fill capabilities that mitigate void formation during gap fill between the adjacent gate structures.
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: January 3, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Chang Chen, Po-Hsiung Leu, Ding-I Liu
  • Patent number: 9484393
    Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a base substrate and a thin-film transistor (TFT) unit, a color filter and a planarization protective layer disposed on the base substrate. The planarization protective layer is electrically connected with a drain electrode of the TFT unit and is conductive. The array substrate has the advantages of simplifying the layer structures of the array substrate, reducing the manufacturing difficulty of the array substrate, and improving the production yield of the array substrate.
    Type: Grant
    Filed: May 26, 2014
    Date of Patent: November 1, 2016
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Yonglian Qi, Shi Shu, Ming Zhao
  • Patent number: 9278373
    Abstract: In one embodiment, a spin coating apparatus includes a coating liquid feeding module to drop a coating liquid onto a substrate, and a motor to rotate the substrate. The module drops a first drop amount of the coating liquid onto the substrate at a first discharge rate, while the motor rotates the substrate at a first number of rotations. The module drops a second drop amount of the coating liquid onto the substrate at a second discharge rate larger than the first discharge rate, while the motor rotates the substrate at a second number of rotations smaller than the first number of rotations, after the first drop amount of the coating liquid is dropped. The module discharges the coating liquid onto the substrate at a third discharge rate smaller than the second discharge rate, after the coating liquid is discharged onto the substrate at the second discharge rate.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: March 8, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Keisuke Nakazawa
  • Patent number: 9269581
    Abstract: A method of producing a solar cell, including: a first coating step in which a pre-wet composition is spin-coated on a surface of a semiconductor substrate; a second coating step in which a diffusing material including a solvent and a diffusing agent containing a first impurity element is spin-coated on the surface where the pre-wet composition has been spin-coated, so as to form a coating film of the diffusing agent; and a first impurity diffusion layer forming step in which the semiconductor substrate having the coating film formed thereon is heated, so as to form a first impurity diffusion layer in which the impurity element contained in the diffusing agent is diffused.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: February 23, 2016
    Assignee: PVG SOLUTIONS INC.
    Inventors: Seiji Ohishi, Katsuya Tanitsu, Shinji Goda, Takayuki Ogino, Futoshi Kato, Ayumu Imai, Yasuyuki Kano
  • Patent number: 9057639
    Abstract: Spin coating a mixture of graphene oxide platelets, water, and an organic solvent by placing a drop of the mixture on a spinning substrate while blowing a drying gas onto the substrate and allowing the water and the organic solvent on the substrate to evaporate; and repeating the spin coating one or more times to form a graphene oxide film in contact with the substrate. An about 1-100 nm thick film of overlapping platelets of reduced graphene oxide.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: June 16, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jeremy T. Robinson, Eric S Snow
  • Patent number: 9028915
    Abstract: A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: May 12, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wei Chang, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh
  • Patent number: 9023693
    Abstract: A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: May 5, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Kung-Liang Lin, Chien-Chih Chen, Fu-Ching Tung, Chih-Yung Chen, Shih-Chin Lin, Kuan-Yu Lin, Chia-Hao Chang, Shieh-Sien Wu
  • Patent number: 8987147
    Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: March 24, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hiroaki Ikegawa, Masahiko Kaminishi, Kosuke Takahashi, Masato Koakutsu, Jun Ogawa
  • Publication number: 20150079806
    Abstract: A method includes rotating a wafer at a first speed for a first time duration. The wafer is rotated at a second speed that is lower than the first speed for a second time duration after the first time duration. The wafer is rotated at a third speed that is higher than the second speed for a third time duration after the second time duration. A photoresist is dispensed on the wafer during the first time duration and at least a portion of a time interval that includes the second time duration and the third time duration.
    Type: Application
    Filed: September 17, 2013
    Publication date: March 19, 2015
    Inventors: Chih-Hsien Hsu, Hong-Hsing Chou, Hu-Wei Lin, Chi-Jen Hsieh, Jr-Wei Ye, Yuan-Ting Huang, Ching-Hsing Chiang, Hua-Kuang Teng, Yen-Chen Lin, Carolina Poe, Tsung-Cheng Huang, Chia-Hung Chu
  • Patent number: 8975196
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes providing a substrate, supplying a first liquid including a terpene to a surface of the substrate, supplying a second liquid including a silicon-containing compound to the surface of the substrate, and converting the silicon-containing compound to a silicon oxide compound.
    Type: Grant
    Filed: September 2, 2013
    Date of Patent: March 10, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Keisuke Nakazawa
  • Publication number: 20150056820
    Abstract: Systems and methods of solvent temperature control for wafer coating processes are provided. In an embodiment, a method for spin coating a wafer includes attaching the wafer to a rotatable chuck. The chuck is then rotated, and solvent is dispensed onto the wafer. The solvent dispensing temperature is controlled while the solvent is dispensed onto the wafer.
    Type: Application
    Filed: August 20, 2013
    Publication date: February 26, 2015
    Applicant: GLOBALFOUNDRIES, Inc.
    Inventors: Jason Lewis Behnke, Christos Karanikas
  • Patent number: 8962495
    Abstract: A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: February 24, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hiroaki Ikegawa, Masahiko Kaminishi, Yoshinobu Ise, Jun Ogawa
  • Patent number: 8956981
    Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: February 17, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Jon Daley, Yoshiki Hishiro
  • Patent number: 8956694
    Abstract: A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: February 17, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hirofumi Takeguchi, Tomohiro Iseki, Yuichi Yoshida, Kousuke Yoshihara
  • Patent number: 8951609
    Abstract: A nanotube-photoresist composite is fabricated by preparing a nanotube suspension using a nanotube structure-containing raw material, dispersing the nanotube suspension in a photoresist using ultra-sonication to produce a nanotube suspension-photoresist mix, spin-coating the nanotube suspension-photoresist mix on a substrate to form a nanotube suspension-photoresist composite layer, and removing one or more solvents in the nanotube suspension-photoresist composite layer by baking.
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: February 10, 2015
    Assignee: STMicroelectronics Asia Pacific Pte Ltd
    Inventors: Shanzhong Wang, Mui Hoon Nai, Zhonglin Miao
  • Patent number: 8940649
    Abstract: A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: January 27, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Kousuke Yoshihara, Shinichi Hatakeyama
  • Patent number: 8940365
    Abstract: A device to form a coating film which can quickly coat a substrate of a follow-up lot after coating a preceding lot. The device is configured such that nozzles for a preceding lot and a following lot are integrated into a common movement mechanism and moved between an upper side of a liquid processing unit and a standby area. A coating method includes sucking air into the nozzle for the preceding lot to form an upper gas layer, sucking a solvent for the preceding lot in the standby area to form a thinner layer, and sucking air into the nozzle for the preceding lot to form a lower gas layer within the nozzle, and thus forming a state that a solvent layer is interposed between the upper gas layer and the lower gas layer.
    Type: Grant
    Filed: December 23, 2011
    Date of Patent: January 27, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Akira Miyata, Yoshitaka Hara, Kouji Fujimura
  • Patent number: 8936832
    Abstract: A method for wet treatment of plate-like articles includes, a chuck for holding a single plate-like article having an upwardly facing surface for receiving liquid running off a plate-like article when being treated with liquid, wherein the chuck is outwardly bordered by a circumferential annular lip. The chuck has an outer diameter greater than the greatest diameter of the plate-like article to be treated, and a rotatable part with an upwardly facing ring-shaped surface for receiving liquid running off the circumferential lip of the chuck. The rotatable part is rotatable with respect to the chuck, the ring-shaped surface is coaxially arranged with respect to the circumferential annular lip, the inner diameter of the ring-shaped surface is smaller than the outer diameter of the chuck, and the distance d between the lip and the upwardly facing ring-shaped surface is in a range from 0.1 mm to 5 mm.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: January 20, 2015
    Assignee: Lam Research AG
    Inventors: Michael Brugger, Alexander Schwarzfurtner
  • Patent number: 8932672
    Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: January 13, 2015
    Assignee: SCREEN Semiconductor Solutions Co., Ltd.
    Inventors: Koji Kaneyama, Masashi Kanaoka, Tadashi Miyagi, Kazuhito Shigemori, Shuichi Yasuda, Tetsuya Hamada
  • Patent number: 8927440
    Abstract: A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: January 6, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Shigehiro Miura
  • Patent number: 8927058
    Abstract: A photoresist coating process including a first step and a second step is provided. In the first step, a wafer is accelerated by a first average acceleration. In the second step, the wafer is accelerated by a second average acceleration. The first acceleration and the second acceleration are both larger than zero, and photoresist material is provided to the wafer only in the second step.
    Type: Grant
    Filed: July 7, 2008
    Date of Patent: January 6, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Shou-Wan Huang, Kuan-Hua Su
  • Patent number: 8921237
    Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: December 30, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Kentaro Oshimo, Masato Koakutsu, Hiroko Sasaki, Hiroaki Ikegawa
  • Patent number: 8912101
    Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 16, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Naoto Tsuji, Atsuki Fukazawa, Noboru Takamure, Suvi Haukka, Antti Juhani Niskanen, Hyung Sang Park
  • Patent number: 8906452
    Abstract: An improved technique achieves a uniform photoresist film on a wafer by controlling the volatility of the solvent in a photoresist solution during the bake process step. Because film formation takes place in the bake rather than the spin steps of the process, the improved technique involves using less viscous and therefore less costly and easier to use resists to cast relatively thick photoresist films. Such control is achieved in an enclosed chamber into which a carrier gas is introduced; the carrier gas mixes with gaseous solvent to create a saturating atmosphere in which the rate of evaporation of solvent decreases. This enables the heating of the wafer without the reduction of solvent in the film so that the photoresist can self-level. When the film has self-leveled, the solvent is then baked off as usual.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: December 9, 2014
    Inventor: Gary Hillman
  • Patent number: 8900998
    Abstract: A plating bath for electroless deposition of gold and gold alloy layers on such silicon-based substrates, includes Na(AuCl4) and/or other gold (III) chloride salts as a gold ion source. The bath is formed as a binary bath solution formed from mixing first and second bath components. The first bath component includes gold salts in concentrations up to 40 g/L, boric acid, in amounts of up to 30 g/L, and a metal hydroxide in amounts up to 20 g/L. The second bath component includes an acid salt, in amounts up to 25 g/L, sodium thiosulfate in amounts up to 30 g/L, and suitable acid, such as boric acid in amounts up to 20 g/L.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: December 2, 2014
    Assignee: University of Windsor
    Inventors: Mordechay Schlesinger, Robert Andrew Petro
  • Publication number: 20140342558
    Abstract: A treating section has substrate treatment lines arranged one over the other for treating substrates while transporting the substrates substantially horizontally. An IF section transports the substrates fed from each substrate treatment line to an exposing machine provided separately from this apparatus. The substrates are transported to the exposing machine in the order in which the substrates are loaded into the treating section. The throughput of this apparatus can be improved greatly, without increasing the footprint, since the substrate treatment lines are arranged one over the other. Each substrate can be controlled easily since the order of the substrates transported to the exposing machine is in agreement with the order of the substrates loaded into the treating section.
    Type: Application
    Filed: July 30, 2014
    Publication date: November 20, 2014
    Inventors: Hiroyuki OGURA, Tsuyoshi MITSUHASHI, Yoshiteru FUKUTOMI, Kenya MORINISHI, Yasuo KAWAMATSU, Hiromichi NAGASHIMA
  • Patent number: 8871301
    Abstract: A coating treatment apparatus includes: a rotating and holding part; a nozzle supplying a coating solution; a moving mechanism moving the nozzle; and a control unit that controls the rotating and holding part, the nozzle, and the moving mechanism to supply the coating solution onto a central portion of the substrate and rotate the substrate at a first rotation speed, then move a supply position of the coating solution from a central position toward an eccentric position of the substrate with the substrate being rotated at a second rotation speed lower than the first rotation speed while continuing supply of the coating solution, then stop the supply of the coating solution with the rotation speed of the substrate decreased to a third rotation speed lower than the second rotation speed, and then increase the rotation speed of the substrate to be higher than the third rotation speed.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: October 28, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Kouzou Tachibana, Takahisa Otsuka, Akira Nishiya
  • Patent number: 8871623
    Abstract: Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: October 28, 2014
    Assignee: SanDisk Corporation
    Inventors: Jian Chen, Karen Chu Cruden, Xiangfeng Duan, Chao Liu, J. Wallace Parce
  • Patent number: 8859442
    Abstract: In various embodiments, the present invention relates to production of encapsulated nanoparticles by dispersing said nanoparticles and an encapsulating medium in a common solvent to form a first solution system and applying a stimulus to said first solution system to induce simultaneous aggregation of the nanoparticles and the encapsulating medium.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: October 14, 2014
    Assignee: Nanoco Technologies Ltd.
    Inventors: Imad Naasani, James Gillies, Emma Fitzgerald, Xiaojuan Wang, Ombretta Masala
  • Patent number: 8846145
    Abstract: A liquid processing method forms a coating film by supplying and pouring a coating solution from a coating solution nozzle onto a surface of a substrate held substantially horizontally by a substrate holder. In the liquid processing method, a process for photographing a leading end portion of a coating solution nozzle is provided. When performing a process for anti-drying of the coating solution for a long period of time in advance, a position of the coating solution and a position of an anti-drying liquid are set by using a soft scale displayed on a screen where the photographed image is displayed. Therefore, a dispense control is performed based on a set value without depending on the naked eyes and a control for suppressing the drying of the coating solution in the leading end portion of the coating solution nozzle is performed.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: September 30, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Michio Kinoshita
  • Publication number: 20140242810
    Abstract: A substrate processing apparatus includes: a process chamber for processing a substrate; a substrate mounting member including a mounting surface on which a plurality of substrates are concentrically mounted with facing a ceiling of the process chamber; a rotation instrument for rotating the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit and a gas exhaust unit which are disposed in the process chamber above the substrate mounting member upstream and downstream in the substrate mounting member rotating direction, respectively; and a controller for controlling the gas supply unit, the gas exhaust unit, and the rotation instrument to process the substrates, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit.
    Type: Application
    Filed: February 26, 2014
    Publication date: August 28, 2014
    Applicant: HITACHI KOKUSAI ELECTRIC, INC.
    Inventor: Sataoshi TAKANO
  • Publication number: 20140235070
    Abstract: Techniques disclosed herein provide an apparatus and method of spin coating that inhibits the formation of wind marks and other defects from turbulent fluid-flow, thereby enabling higher rotational velocities and decreased drying times, while maintaining film uniformity. Techniques disclosed herein include a fluid-flow member, such as a ring or cover, positioned or suspended above the surface of a wafer or other substrate. The fluid-flow member has a radial curvature that prevents wind marks during rotation of a wafer during a coating and spin drying process.
    Type: Application
    Filed: February 19, 2013
    Publication date: August 21, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Derek W. Bassett, Wallace P. Printz, Joshua S. Hooge, Katsunori Ichino, Yuichi Terashita, Kousuke Yoshihara
  • Patent number: 8808798
    Abstract: A coating method includes supplying a coating liquid from a coating nozzle onto a front side central portion of a substrate held on a substrate holding member, rotating the substrate holding member about a vertical axis to spread the coating liquid toward a peripheral portion of the substrate by a centrifugal force and thereby form a film of the coating liquid, forming a liquid film of a process liquid for preventing a contaminant derived from the coating liquid from being deposited or left on a back side peripheral portion of the substrate, and damping a vertical wobble of the peripheral portion of the substrate being rotated, by a posture regulating mechanism, while delivering a gas from delivery holes onto a back side region of the substrate on an inner side of the peripheral portion on which the liquid film is formed.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: August 19, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Takahiro Kitano, Koichi Obata, Hiroichi Inada, Nobuhiro Ogata
  • Patent number: 8802488
    Abstract: A substrate depositing system and a method of using a substrate depositing system. A substrate depositing system includes a load-lock chamber for loading and unloading a substrate, at least one transfer chamber connected to the load-lock chamber and including a substrate transfer device configured to vertically transfer the substrate, and a pair of depositing chambers connected to opposite sides of the at least one transfer chamber and including a depositing source and a pair of substrate fixing devices, the substrate transfer device including a pair of substrate installing members.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: August 12, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jeong-Ho Yi, Suk-Won Jung, Seung-Ho Choi
  • Patent number: 8791030
    Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: July 29, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Fumiko Iwao, Satoru Shimura, Kousuke Yoshihara
  • Publication number: 20140199857
    Abstract: A deposition process for coating a substrate with films of varying thickness on a substrate can be achieve. The thickness of the film deposition can be controlled by the separation between the substrate and a curtain. Different separation distances between the substrate and curtain in the same chemical bath will result in different film thicknesses depositing on the substrate.
    Type: Application
    Filed: March 14, 2014
    Publication date: July 17, 2014
    Applicant: Natcore Technology, Inc.
    Inventor: Yuanchang Zhang
  • Publication number: 20140199856
    Abstract: A method of depositing a film including carrying substrates in plural substrate mounting portions formed on a turntable in a peripheral direction by intermittently rotating the turntable, arranging the plural substrate mounting portions in a carry-in and carry-out area, and sequentially mounting the substrates on the substrate mounting portions, depositing a thin film on a surface of each substrate to laminate a reaction product of reaction gases, which mutually react, by repeating a cycle of rotating the turntable to revolve the substrates and alternately supplying the reaction gases onto surfaces of the substrates, reformulating the thin film by heating each substrate sequentially arranged in a heating area adjacent to the carry-in and carry-out area while intermittently rotating the turntable, and carrying each substrate out after sequentially arranging each substrate, the thin film on which is reformulated, in the carry-in and carry-out area by intermittently rotating the turntable.
    Type: Application
    Filed: January 9, 2014
    Publication date: July 17, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Hitoshi KATO, Toshiyuki Nakatsubo, Shigehiro Miura
  • Publication number: 20140179104
    Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.
    Type: Application
    Filed: December 19, 2013
    Publication date: June 26, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Kentaro Oshimo, Masato Koakutsu, Hiroko Sasaki, Hiroaki Ikegawa
  • Publication number: 20140179120
    Abstract: A method of depositing a film of forming an oxide film containing a predetermined element on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing the oxide film by rotating the turntable while supplying a reaction gas containing the predetermined element, the oxidation gas from the second gas supplying portion, and the separation gas; and rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion.
    Type: Application
    Filed: December 16, 2013
    Publication date: June 26, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Jun OGAWA
  • Publication number: 20140179122
    Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.
    Type: Application
    Filed: December 18, 2013
    Publication date: June 26, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Mitsuhiro Tachibana, Hiroaki Ikegawa, Yu Wamura, Muneyuki Otani, Jun Ogawa, Kosuke Takahashi
  • Publication number: 20140179121
    Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.
    Type: Application
    Filed: December 17, 2013
    Publication date: June 26, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Hiroaki IKEGAWA, Masahiko KAMINISHI, Kosuke TAKAHASHI, Masato KOAKUTSU, Jun OGAWA
  • Patent number: 8758855
    Abstract: A coating film forming apparatus that holds a substrate upon a spin chuck and forms a coating film by supplying a chemical liquid upon a top surface of said substrate comprises: an outer cup provided detachably to surround the spin chuck; an inner cup provided detachably to surround a region underneath the substrate held upon the chuck; a cleaning nozzle configured to supply a cleaning liquid for cleaning a peripheral edge part of the substrate, such that the cleaning liquid is supplied to a peripheral part of a bottom surface of the substrate; a cutout part for nozzle mounting, the cutout part being provided to the inner cup to engage with the cleaning nozzle; and a cleaning liquid supply tube connected to the cleaning nozzle, the cleaning nozzle being detachable to the cutout part in a state in which the cleaning liquid supply tube is connected.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: June 24, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Nobuhiro Ogata, Hiroichi Inada, Taro Yamamoto, Akihiro Fujimoto