Abstract: A polishing pad conditioner for a chemical mechanical polishing apparatus and real-time monitoring method thereof. A conditioning head is supported for rotation at one end of a transverse beam. A drive assembly is coupled to the conditioning head to drive downward force to the conditioning head, and at least one sensor disposed on the transverse beam detects deflection of the transverse beam.

Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.

Abstract: The invention includes a method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The method includes exposing the pad surface to steam, and the steam can comprise ammonium citrate. The invention also includes an apparatus for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The apparatus includes a conditioning stone, and a steam outlet port proximate the conditioning stone. The steam outlet port is configured to jet steam onto the pad surface during the conditioning of the pad surface.

Abstract: A grinding tool with a toll rest includes an adjustment mechanism to adjust the position of the tool rest responsive to wear of the grinding wheel.

Abstract: Methods and systems are disclosed whereby the edges of a glass sheet may be beveled with minimal equipment down time. Preferably such methods and systems bevel the upper and lower edges along lateral sides of a glass sheet. In especially preferred embodiments, laterally separated pairs of upper and lower edge grinding assemblies are provided having respective upper and lower oppositely oriented tapered grinding wheels. A glass sheet may thus be moved in a generally horizontal conveyance direction between one of these pairs of upper and lower edge grinding assemblies so that respective upper or lower lateral edges of the glass sheet are brought into grinding contact therewith. Continually moving the glass sheet in the horizontal conveyance direction will therefore present the other lateral edge to the other pair of upper or lower edge grinding assemblies positioned downstream. As such, the other edge will then be beveled.

Abstract: A gemstone having a crown, a girdle and a pavilion, wherein the girdle is shaped such that, when viewed in plan view, it is primarily bounded by four pairs of parallel straight edges. Three of the four pairs of edges are spaced by roughly equal spacing D1, while the remaining pair of edges is spaced by a spacing D2, wherein D2 is greater than D1 by between 10% and 40%. Also provided is a method for cutting such a gemstone.

Abstract: A computer controlled grinding machine grinds a cylindrical region and an annular shoulder of a rotatable workpiece. Relative movement is effected between the workpiece and a grinding wheel along a line of action which subtends an angle of approach of less than 90 degrees to the Z axis of rotation of the workpiece. Such an angle of approach enables the wheel to grind the annular shoulder of the workpiece simultaneously with grinding the cylindrical portion.

Abstract: In a truing method and apparatus, an analyzing method is employed to calculate a truing shape from which a grinding surface having been trued with a grinding wheel being rotated at a low rotational speed during a truing operation is deformed to a desired shape due to centrifugal expansion depending on a rotational speed difference when the grinding wheel is rotated at a high rotational speed during a grinding operation. Then, with the grinding wheel being rotated at the low rotational speed, the grinding surface is trued with a truing roll to the calculated truing shape. As a result, the grinding surface of the grinding wheel being rotated at the low rotational speed is trued with the truing roll taking into consideration the centrifugal expansion of the grinding surface which takes place when the grinding wheel is rotatated at the high rotational speed during the grinding operation subsequent to the truing operation.

Abstract: A system for measuring and scanning a CMP polishing pad thickness is described. The system includes a first sensor arm capable of being moved in a direction substantially parallel with and at a substantially constant distance from a top surface of the CMP polishing pad. The system also includes a first proximity sensor mounted on the first sensor arm. The first proximity sensor being oriented toward the top surface of the CMP polishing pad. The first proximity sensor being capable of measuring a first distance between the first proximity sensor and the top surface of the CMP polishing pad. The system can also include a second sensor arm capable of being moved in a direction parallel with and at a substantially constant distance from a bottom surface of the CMP polishing pad and a second proximity sensor mounted on the second sensor arm, the second proximity sensor being oriented toward the bottom surface of the CMP polishing pad.

Abstract: An apparatus and method are provided for detecting wear in substrate retainers used for chemical mechanical planarization processes. A substrate retainer is provided that is adapted to enable a sensor to detect when the wear edge of the retainer has worn to a critical wear threshold so that the retainer may be replaced prior to failure.

Abstract: A system and method for chemical mechanical polishing of a substrate is disclosed in which a polishing pad is conditioned by directing a fluid jet to the surface of the polishing pad. Thus, the use of expensive consumables, like conditioning pads comprising diamonds, can be avoided. Furthermore, the risk of substrates being scratched by diamonds lost from the conditioning pad is avoided.

Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.

Abstract: An ironing assembly for use in chemical mechanical planarization (CMP) is provided. The ironing assembly is designed for use over a linear polishing pad which has a plurality of asperities and applied slurry. The ironing assembly includes an ironing disk having a contact surface. The ironing disk is oriented over the linear polishing pad such that the contact surface of the ironing disk can be applied over the surface of the linear polishing pad to at least partially flatten the plurality of asperities before planarizing a semiconductor wafer surface over the linear polishing pad.

Abstract: A computer controlled grinding machine grinds a cylindrical region and an annular shoulder of a rotatable workpiece. Relative movement is effected between the workpiece and a grinding wheel along a line of action which subtends an angle of approach of less than 90 degrees to the Z axis of rotation of the workpiece. Such an angle of approach enables the wheel to grind the annular shoulder of the workpiece simultaneously with grinding the cylindrical portion.

Abstract: In accordance with certain aspects of the invention, an exemplary claim can define the steps of providing a rotating mount for the initially cast prosthesis in association with a numerically or computer controlled grinding machine. The grinding wheel is rotatably supported so that the wheel can translate vertically and axially relative to the axis of the workpiece, and can pivot in a plane generally parallel to the axis of the workpiece. In one step, the stem of the workpiece is rotated as the grinding wheel is held in position substantially perpendicular to the axis of the stem. The grinding wheel is then retracted and repositioned along the length of the stem through a series of successive positions. At each position, the grinding wheel is rotated in contact with the rotating workpiece. Once the grinding wheel is positioned at the transition region, the workpiece is preferably rotated through 180° on both sides of the transition region.

Abstract: A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: The present invention is a system for controlling a pad conditioner in a CMP device. The system includes a roughness-sensing device mounted in proximity to a polishing pad. The roughness-sensing device generates an output responsive to a roughness of the polishing pad. A signal-processing unit then generates a roughness value of the polishing pad in response to the output from the roughness-sensing device, and generates a control signal in response to the generated roughness value. Finally, a control device controls motion of the pad conditioner in response to the control signal.

Abstract: A grinding apparatus for grinding a spline ball groove on a workpiece comprises a rod-shaped grindstone, having a distal end portion with a curved surface corresponding to the groove to be ground, and a spindle mechanism for rotating the grindstone. The spindle mechanism and the grindstone are supported by means of a supporter in a manner such that they are inclined at a given angle to an axis of the workpiece. A rotary dresser, which has a dress groove corresponding to the curved surface of the distal end portion of the grindstones is disposed near the grinding apparatus. The grindstone can be reciprocated along the axis of the workpiece by a drive mechanism between the workpiece and the dresser without changing its angle of inclination.

Abstract: An in-situ method and apparatus for monitoring wear of a dicing saw blade. The apparatus, which is mounted on a cooling block of the dicing saw, has a transmitter to emit a parallel beam of light onto a side surface of the dicing saw blade; a receiver for receiving the light that is un-obscured by the saw blade; and a processor coupled to the receiver for determining wear of the saw blade based on an output from the receiver. The apparatus may also display the wear rate of the saw blade, and/or an estimated time for replacement of the saw blade.

Abstract: A hard machining process uses a cylindrical tool (21) of ceramic or other hard machining material of comparatively low cost that provides a circular cutting edge to be engaged in cutting relation with hardened workpiece (20) to be machined. As tool cutting edge wear occurs, the tool (21) is rotated through a small angle to bring into contact with the workpiece (20) a fresh portion of the cutting edge. It is not necessary to rotate that tool (21) sufficiently to effect replacement of the entire cutting edge portion in engagement with the tool. Sufficient angular movement of the tool is made to replace that of the cutting edge that has the greatest effect on the finish of the machined workpiece (20), which is the cutting location where the removed chip is thinnest.

Abstract: A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.

Abstract: A modification to a chemical mechanical polishing conditioner of a type having a member with a conditioning surface adapted to apply a force to and condition a polishing pad. The conditioner includes at least one sensor disposed within the member, where the at least one sensor is adapted to sense at least one of an amount of the force applied to the polishing pad and a uniformity across the member of the force applied to the polishing pad. In this manner, the force applied by the conditioner to the pad, and the uniformity of the force applied by the conditioner to the pad, can be sensed. These sensed forces can be monitored, reported, and controlled, thus providing a better controlled chemical mechanical polishing process.

Abstract: An apparatus for monitoring a condition of a polishing plate, in particular for detecting the time for the polishing plate to be reconditioned or replaced, comprising a measuring unit containing at least one sensing unit and a signal-conditioning unit; and a data processing unit. The measuring unit is being in contact with the polishing plate and having a possibility to move relative to it. The sensing unit comprises a probing tip and a set of sensors attached to the back surface of the probing tip, and contains at least one sensor of the group of coefficient of friction sensor, acoustic emission sensor, wear sensor. All sensors work simultaneously and their measurement data is processed and analyzed by a data processing unit for obtaining accurate and reliable results.

Abstract: The present invention provides a system and method for measuring the surface properties of polishing pads using noncontact ultrasonic reflectance. An ultrasonic probe is located over the polishing surface and configured to both transmit an ultrasonic signal to the polishing surface and receive a modified ultrasonic signal from the polishing surface without contacting the polishing surface. A subsystem coupled to the ultrasonic probe is configured to determine a surface property of the polishing pad from the modified signal.

Abstract: An internal grinding method for grinding an inner surface of a work having a straight line generatrix shape while performing an in-process inner-diameter size measurement intermittently through oscillation synchronized between a grindstone and a measurer; wherein a circumferential surface of the grindstone is trued into a shape inclined with respect to a moving direction of a X-axis slide table moving forward/backward relative to the work so that normal grinding force when the X-axis slide table moves backward is reduced, while the work is supported with inclination with respect to the moving direction of the X-axis slide table so that the X-axis slide table is oscillated in the moving direction.

Abstract: A system and method are presented for selectively conditioning a surface of a polishing pad of a CMP apparatus in order to achieve a desired surface profile of a semiconductor wafer. The semiconductor wafer may be subjected to a CMP operation using the CMP apparatus following the conditioning. The present CMP apparatus includes a polishing pad having an underside surface mechanically coupled to a substantially planar surface of a platen, an abrasive surface, and a measurement system. The platen and abrasive surface may be rotatable about respective rotational axes. The present conditioning method includes selecting a region of an upper “polishing” surface of the polishing pad (e.g., a CMP region) encircling a rotational axis of the platen and bounded by first and second radial distances from the rotational axis of the platen.

Abstract: A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser body (31) connected to a dresser drive shaft (23) which is vertically movable, a dresser plate (32) which is vertically movable with respect to the dresser body (31), and a dressing member (22) held by the dresser plate (32) for dressing the polishing surface (1a).

Abstract: Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical—mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.

Abstract: A method includes providing at least one wafer having a process layer formed thereon. A surface of the process layer is polished using a first polishing process that is comprised of a slurry and a first polishing pad. The slurry is removed from the surface of the process layer. The surface of the process layer is planarized using a substantially slurryless second polishing process that is comprised of a second polishing pad that is more abrasive than the first polishing pad. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon. The polishing tool is a adapted to polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad and remove the slurry from the surface of the process layer.

Abstract: An eyeglass lens processing apparatus for processing a periphery of an eyeglass lens, includes: a lens rotating unit having rotating shafts for holding and rotating the lens; an abrasive wheel; an abrasive wheel state detecting unit for detecting a lowered processing performance of the abrasive wheel; and a notifying unit for notifying that dressing for the abrasive wheel is required based on a result of detection by the abrasive wheel state detecting unit.

Abstract: An apparatus for grinding a glass base material having a core and a clad comprising: a grinding wheel for grinding the clad; a measuring unit for measuring an eccentricity between a center position of the glass base material and a center position of the core at a plurality of positions along a longitudinal direction of the glass base material; a design unit for calculating target diameters substantially continuous throughout the longitudinal direction of the glass base material so that the eccentricity becomes substantially zero for each of the plurality of positions; and a control unit for controlling the grinding wheel to grind the clad so that a diameter of the glass base material to be the target diameter substantially continuous throughout the longitudinal direction of the glass base material based on the target diameters calculated by the design unit.

Abstract: A method of dressing a grinding wheel by advancing a dressing tool across the surfaces to be dressed, the method comprising first moving the dressing tool across each side portion to remove material to make the wheel of predetermined width and then across the edge of the wheel to form corner radii, wherein the dressing tool is rotated as it is advanced and the speed of advancement across the side surfaces is different from that across the edge.

Abstract: A method and apparatus for improving the pad conditioning process of a polishing pad in a chemical-mechanical polishing apparatus employs closed loop control of the polishing pad conditioning process. An arrangement includes a pad conditioning head carried by an arm that is coupled to an arm support located remotely from the conditioning head. A down force sensor in the arm support measures the down force exerted by the pad conditioning head through the conditioning disk. A controller receives the down force measurements from the down force sensor and controls the arm support to controllably vary the down force exerted by the pad conditioning head. The conditioning apparatus is thus controlled in response to the feedback from the down force measurements in a closed loop control to modify the conditioning process and control the pad wear uniformity.

Abstract: An object of the present invention is to provide a lapping machine in which abrasive grains can be efficiently and completely removed from a lapping plate. In the lapping machine of the present invention, a lapping plate has a lapping face and rotates about a rotary shaft. A moving member has a wiping face extended in a longitudinal and moves, in a plane parallel to the lapping face of the lapping plate, in the direction perpendicular to the wiping face. A driving mechanism moves the moving member. With this structure, the moving member securely catches and removes foreign substances from the lapping plate. The foreign substances left can be completely removed in a short time and the working efficiency of the lapping steps can be highly improved.

Abstract: A system for conditioning rotatable polishing pads used to planarize and polish surfaces of thin film integrated circuits deposited on semiconductor wafer substrates, microelectronic, and optical system. The system has a pad conditioning apparatus, process fluids, a vacuum capability to pull waste material out of the conditioning pad, self-contained flushing means, and a piezo-electric device for vibrating the pad conditioning apparatus.

Abstract: An ELID centerless grinding apparatus comprising: a blade 2 for horizontally supporting a rotator workpiece 1 and and a regulating wheel 10 driven to rotate around a horizontal shaft center. An outer surface of the workpiece is subjected to ELID grinding by using a conductive grinding wheel 4. An outer peripheral portion of the wheel 10 includes a conductive elastic member 11 and abrasion resisting particles 12. An electrolytic electrode 14 is provided in close vicinity to an outer peripheral surface of the wheel 10. An electrolytic power supply 16 applies an electrolytic voltage between the electrolytic electrode and the wheel. A conductive electrolytic fluid is flow between the electrode and the wheel and the member 11 is removed by the electrolytic dressing to cause the abrasion resisting particles 12 to project, while the particles 12 are brought into contact with the outer peripheral surface of the workpiece 1 to rotate around its shaft center.

Abstract: A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.

Abstract: A process for dressing a tool, a honing tool in particular, introduced into a machine for fine machining of the tooth profiles of gear workpieces, with a dressing wheel which is engaged with the tool to be dressed in place of a gear workpiece and is caused to rotate. To achieve optimum cutting conditions the use is provided of a dressing wheel with a helix angle differing from that of the gear workpiece, an axis intersection angle different from that for fine machining of gear workpieces being set for dressing in order to obtain the assigned helix angle of the tool.

Abstract: A system and method are disclosed for preparing platens to perform lapping operations. The system includes a platter that is rotatably mounted on a base and designed to receive the platen thereon. A main drive motor is provided for rotating the platter and the platen disposed thereon. A plurality of pressure arms are disposed on the base and configured to include a tool receiving portion that can be positioned in alignment with a lapping surface of the platen, and configured to softly touch a tool to a platen. A tool is attached to each tool receiving portion so that predetermined operations can be performed on the lapping surface of the platen. A monitor is provided to monitor predetermined parameters and maintain substantially constant conditions while preparing the platen.

Abstract: The present invention discloses a CMP pad dresser which has a plurality of uniformly spaced abrasive particles protruding therefrom. The abrasive particles are super hard materials, and are typically diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), or polycrystalline cubic boron nitride(PcBN). The abrasive particles are brazed to a substrate which may be then coated with an additional anti-corrosive layer. The anti-corrosive layer is usually a diamond or diamond-like carbon which is coated over the surface of the disk to prevent erosion of the brazing alloy by the chemical slurry used in conjunction with the CMP pad. This immunity to chemical attack allows the CMP pad dresser to dress the pad while it is polishing a workpiece. In addition to even spacing on the substrate, the abrasive particles extend for a uniform distance away from the substrate, allowing for even grooming or dressing of a CMP pad both in vertical and horizontal directions.

Abstract: The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP). The present invention also relates to a method of determining the wear rate of a fixed abrasive polishing pad.

Abstract: Apparatus for removing material from a workpiece is described, in which the apparatus comprises means for advancing an abrasive tool towards the workpiece to bring an abrasive surface of the tool into contact with the surface of the workpiece, means for moving the abrasive surface relative to the workpiece to remove material from the workpiece, means for detecting a load applied to the tool by the workpiece, and means for controlling the rate of advancement of the abrasive tool towards the workpiece depending on the magnitude of the detected load.

Abstract: A voltage is applied between a cylindrical cutting grindstone 2 that rotates about a vertical axis Y and a cylindrical truing grindstone 6 that rotates about a horizontal axis X. The vertical outer surface 2a and the horizontal lower surface 2b of the cutting grindstone are trued by a plasma discharge. Then without applying the voltage, the cutting grindstone 2 is trued mechanically by the truing grindstone 6, and while the outer periphery and lower surface of the cutting grindstone are dressed electrolytically, the outer periphery and lower surface are made to contact a workpiece 1 and process a micro-V groove. This method makes it possible to produce an immersion grating with a high resolution using hard, brittle materials such as germanium, gallium arsenide and lithium niobate.

Abstract: An automatic grinding device for sharpening the knives of a forage harvester chopper drum includes a controller including a counter for counting the number of times the grindstone is adjusted toward the chopper drum during sharpening operation. The controller includes a microprocessor having a non-volatile memory in which may be stored a threshold value, determined by the type of grindstone, to which the count of the counter may be compared for generating a signal indicating the degree of wear of the grindstone so that it may be replaced when worn out.

Abstract: A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body to control the pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.

Abstract: A planarization apparatus has a stocker in which a dressing board is stored. The dressing board is picked up from the stocker and mounted on a chuck table by a transport robot. Then, dressing of a grinding wheel or a polishing pad is performed with the dressing board. Thereafter, the used dressing board is withdrawn into the stocker by the transport robot after the process through cleaning and drying.

Abstract: A polishing method using a dynamic feedback recipe is disclosed. The polishing method includes steps of providing a first recipe, polishing a first wafer according to the first recipe, measuring the first wafer to obtain a first determined data from the first wafer, calculating a second recipe according to a specific equation and the first determined data, and replacing the first recipe with the second recipe and polishing a second wafer according to the second recipe.

Abstract: The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP). The present invention also relates to a method of determining the wear rate of a fixed abrasive polishing pad.

Abstract: The description deals with a facility for dressing of a grindstone (1) for grinding of a running surface structure of a ski, which facility consists of a rotating drive (7) for the grindstone (1), of a dresser (2) adjustable to the circumferential surface of the grindstone (1) and equipped with at least one cutting insert, and of a feed drive (6) for the axially parallel relative movement of the dresser (2) against the grindstone (1). To create favorable construction features it is suggested to provide a controlling system (8) for the feed drive (6) and/or the rotating drive (7), equipped with a control program memory (9) selectable via an input unit (10) and with an evaluation circuit (12) connected to the control program memory (9) for the program-sensitive definition of the position-dependent switching points for the rate of the feed drive (6) and/or the rotating drive (7).

Abstract: The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.