Abstract: The present disclosure includes barrier devices for use in an apparatus used to form lapping plates. The barrier devices can contain liquid on the surface of the lapping plate platen. The present disclosure also involves related methods.

Abstract: A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense liquid, such as a polishing fluid or water. The first fluid delivery arm is disposed over at least 50% of the radius of the polishing pad, while the second fluid delivery arm is disposed over less than 50% of the radius of the polishing pad. The second fluid delivery arm is configured to dispense either a polishing fluid or a water onto the polishing pad to effect the polishing rate at the edge of the substrate.

Abstract: A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 ? and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 ?; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pKa in a range from about 6 to about 9.

Abstract: A slurry containing abrasive grains and a liquid medium, the abrasive grains including first particles and second particles being in contact with the first particles, the first particles containing ceria, the first particles having a negative zeta potential, the second particles containing a hydroxide of a tetravalent metal element, and the second particles having a positive zeta potential.

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Abstract: A method for the grinding finish machining of an already toothed gearwheel workpiece in an NC-controlled machine tool, comprising the following steps: a. providing the gearwheel workpiece in the machine tool, b. providing a first grinding tool in the machine tool, c. providing a second grinding tool in the machine tool, d. grinding machining of at least one tooth flank of the gearwheel workpiece using the first grinding tool, e. grinding machining of at least one tooth flank in the transition region to the tooth head of the gearwheel workpiece using the second grinding tool in the machine tool to generate a head edge rounding on the gearwheel workpiece, f. further grinding machining of at least one tooth flank of the gearwheel workpiece using the first grinding tool and/or the second grinding tool in the machine tool.

Abstract: To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.

Abstract: A method and device for inspection or analysis of a semiconductor sample is provided. The method includes: sandwiching a processed semiconductor sample between two blocks of a semiconductor material; polishing the sandwiched sample such that an even surface is obtained; and measuring the surface of the sandwiched sample. The blocks of a semiconductor material comprise the same semiconductor material as the semiconductor sample.

Abstract: A firearm having a laser induced friction surface. A method for forming the laser induced friction surface on the firearm may includes the steps of disposing the laser machine adjacent to a component of the firearm, adjusting the laser machine, then applying the laser beam of the laser machine onto a component surface.

Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.

Abstract: The present invention is a polishing agent for a synthetic quartz glass substrate, containing polishing abrasive grains, a polishing accelerator, and water, wherein the polishing abrasive grains are wet ceria particles, and the polishing accelerator is a polyphosphoric acid, a salt thereof, a metaphosphoric acid, a salt thereof, a tungstic acid, or a salt thereof. There can be provided a polishing agent for a synthetic quartz glass substrate that has high polishing rate and can sufficiently reduce generation of defects due to polishing.

Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallylamine salt having a cationic amine group, such as a diallylammonium halide, or a diallylalkylamine salt having a cationic amine group, such as a diallylalkylammonium salt, or mixtures of the copolymers, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallylamine salt having a cationic amine group comprises a copolymer of diallylammonium chloride and sulfur dioxide and the copolymer of the diallylalkylamine salt having a cationic amine group comprises a copolymer of diallylmonomethylammonium halide, e.g. chloride, and sulfur dioxide.

Abstract: A working chamber system for the surface treatment of workpieces comprises at least one tightly closable work chamber (101), a frame-like workpiece holder (10, 20, 30) which is displaceable on a guide rail between a mounting position outside the work chamber (101) and a working position in the work chamber (101), and a manipulator which, as seen in plan view, is arranged next to a group of parallel guide rails within the work chamber (101). At least one of the workpiece holders (10, 20, 30) has an external frame (11, 21, 31), via which it is guided in the guide rails, and an internal frame (12, 22, 32) which is surrounded by the external frame (11, 21, 31) in a transporting position and which is displaceable into a position outside the main plane of the external frame (11, 21, 31) in the mounting position and/or the working position.

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract: A head structure for a lapping assembly including a lapping control feature is disclosed. The lapping control feature includes a raised contact surface elevated from a front surface of the head structure of the lapping assembly. A relative position of the workpiece and raised contact surface are aligned to control workpiece thickness and other lapping parameters. In illustrated embodiments, the relative position of the workpiece and raised contact surface are aligned via an adjustment mechanism on the head structure. In illustrated embodiments, the adjustment mechanism is configured to adjust a position of the workpiece relative to the raised contact surface.

Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

Abstract: The method for machining a series of workpieces (21) via at least one machining jet includes the following steps: each workpiece (21) is associated with an identifier for uniquely identifying the workpiece, during the machining of a respective workpiece, the temporal characteristic of the machining jet is detected by at least one sensor (30), the detected temporal characteristic is evaluated so as to obtain at least one comparative value, and for detecting incorrect machining, the at least one comparative value is compared with at least one threshold value.

Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Abstract: A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.

Abstract: A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing at least one trimming apparatus including a trimming disk, a plurality of trimming bodies and an outer toothing. The upper and lower working disks are rotated. The trimming apparatus is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. The working layers and the trimming body are brought into contact so as to release abrasive substances from the trimming bodies and so as to effect material removal from the working layers. The direction of the drives of the grinding apparatus is changed at least twice during trimming.

Abstract: A method of preparing an edge-strengthened article comprises polishing of an edge of an article having a first edge strength using magnetorheological finishing, wherein after the polishing the article has a second edge strength and the second edge strength is greater than the first edge strength.

Abstract: Disclosed is a method of producing a glass substrate for an information recording medium including a rough polishing step of performing a rough polishing on a glass material containing 0.01 to 2 mass % of cerium oxide; a washing step of washing the glass material after the rough polishing step, so that the cerium content of the glass material surface becomes 0.125 ng/cm2 or less; and a precision polishing step of performing precision polishing on the glass material after the washing step by cyclically using a polishing material containing colloidal silica.

Abstract: A method of manufacturing a tubular structure is implemented by housing a tubular base, which has a side circumference surface formed in a bellows-like shape, in a polishing container, causing magnetic particles to flow along a circumferential direction of the tubular base due to action of magnetic poles, and supplying abrasive particles to the polishing container so that the abrasive particles flow along an axial direction of the tubular base, thereby polishing a surface of the tubular base. The method includes: a first polishing step of polishing an exposed surface of the tubular base by causing the magnetic particles and the abrasive particles to flow while an inner surface of the tubular base remains covered; and a second polishing step of polishing an exposed surface of the tubular base by causing the magnetic particles and the abrasive particles to flow while an outer surface of the tubular base remains covered.

Abstract: A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers.

Abstract: An easily installable and preferably antimicrobial cover trim for a push bar of an exit device for a door, as well as a method for increasing fingerprint resistance of metal touch surfaces.

Abstract: This invention makes it possible to impart bioactivity to a variety of materials by sandblasting to form pores in the surface thereof.

Abstract: The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: There is provided a method of producing a substrate for magnetic recording media which is capable of efficiently removing alumina abrasive grains in the latter polishing step that have been stuck in the former polishing step during polishing of the substrate for magnetic recording media in which a NiP plating film has been formed on the surface of an Al alloy substrate, the method including: a rough polishing step for polishing the surface of a substrate for magnetic recording media, which is prepared by forming a NiP plating film on the surface of an Al alloy substrate, using a first grinder while supplying a polishing liquid containing alumina abrasive grains; and a finish polishing step for polishing the substrate for magnetic recording media following washing, using a second grinder while supplying a polishing liquid containing colloidal silica abrasive grains, wherein supply of the polishing liquid containing alumina abrasive grains is stopped and alumina abrasive grains are removed from the grinder b

Abstract: There is provided a polishing composition, containing abrasive grains and an acid represented either by R2—R1—SO3H (wherein R1 is a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and R2 is a hydroxy group, a carboxy group, or a sulfonic acid group when R1 is the linear alkylene group, or R2 is a carboxy group or a hydroxymethyl group when R1 is the linear hydroxyalkylene group), or by C6H5—R3 (wherein R3 is a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.

Abstract: Methods for abrasive cleaning, deburring, providing barrier coatings and sealing leaks in existing pipes, in a single operation, in one pass by intermittent bursts of dry particulates forced and pulled by air throughout the piping system by a generator and a vacuum. Cleaning includes intermittently injecting bursts of abrasive particles into the pressurized gas into the piping system for cleaning pipe interior walls, reducing burrs and interior lips in the pipe interior walls and generating a vacuum suction in the piping system to remove abrasive particles and debris.

Abstract: A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad.

Abstract: A transdermal intraosseous device includes a transdermal adapter for an external prosthetic device for a bone of a patient and a bone fixator including a distal portion coupled to the transdermal adapter and a proximal portion for anchoring into the bone. The transdermal adapter includes a dome-shaped portion for transcutaneous implantation and an external shaft extending from the dome-shaped portion. A dermal transition structure is configured to include a controlled roughness gradient from the external shaft to the dome-shaped portion and configured for use in infection control at a dermis layer of the patient.

Abstract: A method includes: charging a polishing material into a polishing apparatus that polishes a surface of a cylindrical film including a resin; alternately and repeatedly performing a surface-roughening operation of causing the polishing material to collide with the surface of the cylindrical film, thereby roughening the surface, and a cylindrical film replacing operation of replacing the cylindrical film on which roughening of the surface has been completed with another cylindrical film on which roughening of the surface has not been completed; replacing the polishing material by partially discharging the polishing material, and charging a new polishing material so that the percentage of the new polishing material with respect to the total amount of the polishing material after the new polishing material is charged becomes 30% by weight or more; and alternately and repeatedly performing the surface-roughening operation and the cylindrical film replacing operation again.

Abstract: In forming an actuator, a large end surface of a tapered roller of a tapered roller bearing is shot with minute particles of silicon carbide having a diameter of 0.5 to 100 ?m and having an angle formed by crushing, and such a surface is scraped concavely at a diameter within a range from 0.5 to 100 ?m to form a large number of concavities having a depth of equal to or greater than 1 ?m at a pitch of equal to or less than 200 ?m. The concavities are non-continuous and isolated from each other, and serve as a lubricant puddle. The concavities are formed by scraping and not by plastic deformation, and thus the surface is not hardened.

Abstract: An apparatus for lapping a portion of an exterior surface of a housing is described. The apparatus includes at least a lapping tool arranged to execute a lapping operation. The lapping tool takes the form of a lapping pad which includes a conduit through which slurry can be transported for local deposition on the housing during a lapping operation. The apparatus also includes a stage on which a workpiece in the form of a housing is mounted. During the lapping operation, slurry is passed through the slurry conduit in the lapping tool, the lapping tool and the housing are moved in various motions. In this way, a gradual transition region is created between an accessory region and the remainder of the housing.

Abstract: A surface-treating process and a forming process in which an inner surface of a vacuum member is mechanically polished in the presence of a liquid medium including no hydrogen atom.

Abstract: A sandblasting apparatus includes a chamber defining a cavity, a support assembly received in the cavity, a first and a second sandblasting assemblies. The support assembly includes a number of pairs of elongated support plates for holding a plate-shaped workpiece therebetween. The support plates are moveable along a vertical direction and a first horizontal direction. The first sandblasting assembly is configured for spraying sand downwardly toward the plate-shaped workpiece so as to cut the plate-shaped workpiece into a number of workpiece strips. The second sandblasting assembly is configured for spraying sand toward the workpiece strips along a second horizontal direction perpendicular to the first horizontal direction so as to cut the workpiece strips into workpiece blocks.

Abstract: A synthetic quartz glass substrate is prepared by (1) polishing a synthetic quartz glass substrate with a polishing slurry comprising colloidal particles, an ionic organic compound having an electric charge of the same type as the colloidal particles, and water, and (2) immersing the polished substrate in an acidic or basic solution for etching the substrate surface to a depth of 0.001-1 nm. The method produces a synthetic quartz glass substrate while preventing formation of defects of a size that is detectable by the high-sensitivity defect inspection tool, and providing the substrate with a satisfactory surface roughness.

Abstract: A method for polishing a semiconductor wafer having a first side and a second side, the method includes polishing the first side using a Fixed Abrasive Polishing (FAP) with a polishing pad including fixedly bonded abrasives having an average particle size of 0.1-1.0 ?m; applying a cement layer with a thickness of at most 3 ?m to the polished first side; fixing the polished and cemented first side on a carrier plate of a polishing machine; and polishing the second side using a single-side chemical mechanical polishing.

Abstract: The present invention relates to a surface treating method for making an amorphous alloy component. The surface treatment method includes the following steps: an amorphous alloy sheet is provided; the amorphous alloy sheet is fixed into a dry blast machine; and the surface of the amorphous alloy sheet is treated by sandblasting. In the sandblasting step, air pressure is controlled to be in a range from about 1.5 gf/cm2 to 6.0 kgf/cm2 and blasting time is in a range from about 1 second to 60 seconds; the sand used in sandblasting is preferably selected from a group consisting of aluminium oxide, zirconium dioxide and silicon dioxide, and a grain size of the sand is in a range from about 100 ?m to 250 ?m.

Abstract: A sandblasting apparatus for cutting a plate-shaped workpiece into a plurality of separate tablets includes a chamber defining a cavity, a support assembly received in the cavity, a sandblasting assembly for spraying sand toward the workpiece, a first mask located between the sandblasting assembly and the support assembly, a second mask located between the sandblasting assembly and the support assembly, and a mask switching member for selectively placing the first mask or the second mask over the workpiece. The support assembly is configured for supporting the workpiece and the tablets. The first mask cooperates with the sandblasting assembly to remove unwanted portions of the workpiece thus obtaining a tablet network consisting of a plurality of tablets and a plurality of connecting portions interconnected between the tablets. The second mask cooperates with the sandblasting assembly to remove the connecting portions of the tablet network thus obtaining a plurality of separated tablets.

Abstract: Provided are a rinsing agent to produce a hard disk substrate free from remaining abrasive grains as well as a pit defect on the surface thereof and a method for production of a hard disk substrate using such a rinsing agent. A rinsing agent of the present invention is rinsing solution containing colloidal silica as abrasive grains. Letting that the colloidal silica abrasive grains have a concentration C and an average grain size R (C and R are represented in weight % and nm, respectively), the concentration C and the average grain size R of the colloidal silica abrasive grains have a relation matching the following Expression (1): 12.2C+18.2 (1).

Abstract: According to one embodiment, a method for manufacturing a thin film magnetic head includes forming on a substrate magnetic head portions having a magnetoresistive element and resistance detection elements for measuring an amount of polishing; slicing the substrate to form at least one row bar; polishing the ABS of each row bar; forming rails on the polished ABS; and cutting each row bar to separate each magnetic head portion. The step of polishing the ABS includes measuring a resistance of each resistance detection element and a resistance of each magnetoresistive element; calculating an offset value between the resistance detection element and the magnetoresistive element; and calculating a final resistance of the resistance detection element by using the calculated offset value. When the resistance of the resistance detection element reaches the final resistance, polishing of the ABS of the row bar is terminated. Other methods are presented as well.

Abstract: Disclosed is a method of producing a glass substrate for an information recording medium including a rough polishing step of performing a rough polishing on a glass material containing 0.01 to 2 mass % of cerium oxide; a washing step of washing the glass material after the rough polishing step, so that the cerium content of the glass material surface becomes 0.125 ng/cm2 or less; and a precision polishing step of performing precision polishing on the glass material after the washing step by cyclically using a polishing material containing colloidal silica.

Abstract: The present invention relates to a method for manufacturing a glass substrate for information recording medium, the method including: a lapping step of lapping a circular glass plate made of an alkali aluminosilicate glass; and a subsequent cerium oxide polishing step of polishing the circular glass plate with a slurry containing a cerium oxide abrasive, in which a difference (SiO2?Al2O3) obtained by subtracting an Al2O3 content from an SiO2 content in the alkali aluminosilicate glass is 62% by mole or less; and in which the method further includes: subsequently to the cerium oxide polishing step, a cleaning step of cleaning the circular glass plate with a cleaning liquid having a sulfuric acid concentration of 20% by mass or more and 80% by mass or less and a hydrogen peroxide concentration of 1% by mass or more and 10% by mass or less at a liquid temperature of 50° C. or higher and 100° C.

Abstract: A method for surface treating a golf club head, includes: (a) forming a depression unit in the golf club head, the depression unit being indented inwardly from an outer surface of the golf club head, the outer surface being divided into a working area and a non-working area, the depression unit being formed in the working area; (b) filling the depression unit with a shielding material and covering the non-working area with a covering material; and (c) sandblasting the golf club head after step (b) and removing subsequently the shielding material from the depression unit and the covering material from the non-working area so as to form the working area into sandblasted and non-sandblasted regions that differ in gloss intensity.

Abstract: In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.

Abstract: An on-line method of cleaning contaminants from at least one interior surface in plasma chambers comprises blasting one or more interior surfaces of a plasma chamber with dry ice to remove contaminants from the one or more surfaces.

Abstract: A process for producing a glass substrate for information recording media, comprising lapping a glass disk made of low alkali aluminosilicate glass that contains no alkali metal oxide or contains alkali metal oxides in a total amount of less than 4 mol %, and subsequently polishing the glass disk by using a slurry that contains cerium oxide abrasives, characterized by cleaning the glass disk by using a cleaning liquid that contains sulfuric acid at a concentration of from 20 mass % to 80 mass % and hydrogen peroxide at a concentration of from 0.5 mass % to 10 mass % at a liquid temperature of from 50° C. to 100° C., and thereafter polishing the main surface of the glass disk, by using a slurry that contains colloidal silica abrasives.